Packaging structure of IGBT power device

Abstract

The utility model relates to a packaging structure of an IGBT (Insulated Gate Bipolar Translator) power device. The packaging structure comprises a slide glass substrate, a grid electrode bonding region, a source electrode bonding region, a first chip and a second chip, the first chip and the second chip are vertically arranged on the surface of the slide glass substrate at intervals; the grid electrode bonding region and the source electrode bonding region are respectively positioned on two sides of the slide glass substrate; the source region part of the first chip and the source region part of the second chip are electrically connected with the source electrode bonding region; according to the scheme, the size of the slide glass substrate and the positions of the gate bonding region and the source bonding region are changed, so that the size of the bonding region can be adjusted, and the bonding area can be increased.

Description

TECHNICAL FIELD

[0001] The utility model belongs to power semiconductor packaging technical field, concretely relates to a kind of packaging structure of IGBT power device. BACKGROUND

[0002] The power IGBT single tube packaging structure in prior art, most of them adopt IGBT chip and diode chip two kinds of chips to be sintered on bottom plate by solder, realize the electrical connection between chip and substrate drain, the source area of two kinds of chips is connected with source Pad lead by bonding wire, IGBT chip gate region is connected by bonding with gate Pad, but in prior art, it is limited by the length-width ratio of substrate, two chips can only be placed horizontally, as shown in Figure 1 The gate and source Pad can only be designed to the position below substrate, leading to the limited area of bonding Pad, the length of chip wire is longer, and the direction of bonding wire needs to be adjusted, the bonding difficulty increases, and the reliability reduces;In view of this, the present scheme is generated. UTILITY MODEL CONTENT

[0003] In view of the deficiencies of prior art, the technical problem to be solved by the utility model is to provide a kind of packaging structure of IGBT power device, it can change the size of carrier substrate, gate bonding area and source bonding area position, so as to adjust the size of bonding area and increase the bonding area.

[0004] To solve the above technical problems, the technical scheme adopted by the utility model is: a kind of packaging structure of IGBT power device, including carrier substrate, gate bonding area, source bonding area, first chip and second chip;

[0005] The first chip and the second chip are vertically spaced apart on the surface of the carrier substrate;The gate bonding area and the source bonding area are located on the two sides of the carrier substrate respectively;

[0006] The source area part of the first chip and the source area part of the second chip are electrically connected with the source bonding area;The gate part of the second chip is electrically connected with the gate bonding area.

[0007] Further, the carrier substrate includes a connection area and a mounting area, the mounting area is connected below the connection area, the first chip and the second chip are mounted in the mounting area, and the gate bonding area and the source bonding area are located on the two sides of the mounting area respectively.

[0008] Further, the source area part of the first chip and the source area part of the second chip are connected by bonding wire between the source bonding area, and the gate part of the second chip is connected by bonding wire with the gate bonding area.

[0009] Further, the connection area of the carrier substrate is formed with a heat sink fixing hole.

[0010] Further, the mounting area length is less than the length of the connecting area, and the distance between the gate bonding area edge line and the source bonding area edge line is equal to the mounting area length.

[0011] Further, the gate bonding area, the source bonding area and the lower end of the slide substrate are provided with a pin.

[0012] Compared with the prior art, the utility model has the following beneficial effects:

[0013] 1. The utility model discloses a slide substrate size adjustment, so that the first chip and the second chip are vertically arranged on the slide substrate, which facilitates the neat arrangement of the bonding wire and reduces the bonding difficulty.

[0014] 2. Because of the change of the slide substrate size, the gate and the source bonding area can be better increased in size and position, meeting the bonding requirements of more bonding wires, and the arrangement of the several bonding wires is compact and reasonable in structure.

[0015] 3. The gate bonding area and the source bonding area are distributed on both sides of the slide substrate, effectively avoiding the high-voltage breakdown caused by the bonding wire insulation spacing problem.

[0016] 4. The utility model meets the requirements of multiple bonding wires, greatly improves the bonding life and the reliability of the IGBT device. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 It is a top view structural schematic diagram of the existing IGBT power device packaging structure mentioned in the background technology of the utility model;

[0018] Figure 2 It is a three-dimensional structural schematic diagram of the IGBT power device packaging structure of the utility model;

[0019] Figure 3 It is a top view structural schematic diagram of the IGBT power device packaging structure of the utility model.

[0020] Marked in the figure: 1, slide substrate; 11, connecting area; 111, heat dissipation plate fixing hole; 12, mounting area; 2, gate bonding area; 3, source bonding area; 4, first chip; 5, second chip; 6, pin; 7, bonding wire. DETAILED DESCRIPTION

[0021] In order to make the above features and advantages of the utility model more obvious and easy to understand, the following embodiments are taken, and the detailed description is as follows in cooperation with the drawings.

[0022] As Figures 1-3As shown, this embodiment provides a packaging structure for an IGBT power device, including a substrate 1, a gate bonding region 2, a source bonding region 3, a first chip 4, and a second chip 5.

[0023] The substrate 1 includes a connection area 11 and a mounting area 12. The mounting area 12 is connected below the connection area 11, and the length of the mounting area 12 is shorter than the length of the connection area 11. A heat sink fixing hole 111 is formed on the connection area 11 of the substrate 1, which is used to fix the substrate to the heat sink. A pin 6 is provided at the lower end of the substrate 1.

[0024] The first chip 4 and the second chip 5 are vertically spaced and mounted in the mounting area 12. The gate bonding area 2 and the source bonding area 3 are located on opposite sides of the mounting area 12, effectively preventing high-voltage breakdown caused by the insulation spacing of the bonding wires 7. The distance between the edge of the gate bonding area 2 and the edge of the source bonding area 3 is equal to the length of the mounting area 12. Pins 6 are provided at the lower ends of the gate bonding area 2 and the source bonding area 3.

[0025] The source region of the first chip 4 is electrically connected to the source region of the second chip 5 and the source bonding region 3; the gate region of the second chip 5 is electrically connected to the gate bonding region 2. Specifically, the source region of the first chip 4 and the source region of the second chip 5 and the source bonding region 3 are connected by bonding wires 7, and the gate region of the second chip 5 is connected to the gate bonding region 2 by bonding wires 7, which satisfies the requirement of multiple bonding wires 7 and greatly improves the bonding life and the reliability of the IGBT device.

[0026] This solution adjusts the size of the substrate 1 so that the first chip 4 and the second chip 5 are vertically positioned on the mounting area 12 of the substrate 1, which facilitates the neat arrangement of the bonding wires 7, reduces the bonding difficulty, and because of the change in the size of the substrate 1, the area of ​​the gate and source bonding region 3 can be increased by changing the size and position, which meets the bonding requirements of more bonding wires 7. The arrangement of several bonding wires 7 is compact and the structure is reasonable.

[0027] The foregoing has shown and described the basic principles and main features of this invention, as well as its advantages. Those skilled in the art should understand that this invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of this invention. Various changes and modifications can be made to this invention without departing from its spirit and scope. All such changes and modifications fall within the scope of this invention as defined by the appended claims and their equivalents.

Claims

1. A packaging structure of an IGBT power device, characterized by: The chip carrier substrate, the gate bonding area, the source bonding area, the first chip and the second chip; The first chip and the second chip are vertically spaced apart on the surface of the chip carrier substrate; the gate bonding area and the source bonding area are respectively located on both sides of the chip carrier substrate; The source area part of the first chip and the source area part of the second chip are electrically connected with the source bonding area; the gate part of the second chip is electrically connected with the gate bonding area.

2. The packaging structure of an IGBT power device according to claim 1, characterized in that: The chip carrier substrate comprises a connecting area and a mounting area, the mounting area is connected below the connecting area, the first chip and the second chip are mounted on the mounting area, and the gate bonding area and the source bonding area are respectively located on both sides of the mounting area.

3. The packaging structure of an IGBT power device according to claim 1, characterized in that: The source area part of the first chip and the source area part of the second chip are connected with the source bonding area through a bonding wire, and the gate part of the second chip is connected with the gate bonding area through a bonding wire.

4. The packaging structure of an IGBT power device according to claim 2, characterized in that: A heat sink fixing hole is formed on the connecting area of the chip carrier substrate.

5. The packaging structure of an IGBT power device according to claim 2, characterized in that: The length of the mounting area is less than the length of the connecting area, and the distance between the edge line of the gate bonding area and the edge line of the source bonding area is equal to the length of the mounting area.

6. The packaging structure of an IGBT power device according to claim 1, wherein: The gate bonding area, the source bonding area and the lower end of the chip carrier substrate are provided with pins.

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