Anti-high-reflectivity single-mode red light semiconductor laser

Abstract

The utility model discloses an anti-high-reflection single-mode red light semiconductor laser, which structurally comprises a red light chip, a focusing lens, an isolation filter and a tail fiber, the isolation filter is arranged between the focusing lens and the tail fiber, and red light emitted by the red light chip sequentially passes through the focusing lens and the isolation filter to be coupled into the tail fiber. The tail fiber carries out beam expansion on the return light and carries out isolation and absorption on the return light. According to the multi-resistance high-reflection single-mode red light semiconductor laser provided by the invention, the reflection light of the red light is isolated by using the isolation filter, and the reflection light is expanded by using the tail fiber, so that the power density of the reflection light can be effectively reduced, and the absorption efficiency of the reflection light can be improved; and therefore, the isolation effect on the return light is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of laser application, and in particular to a single-mode red light semiconductor laser with high anti-reflection. BACKGROUND

[0002] At present, the indicating red light semiconductor laser applied to the high-power fiber laser will cause the risk of failure of the red light chip due to the high-power laser returning to the surface of the red light chip. In order to reduce the failure of the red light chip caused by the returning light, it is often necessary to increase the isolation device on the whole machine end or the red light semiconductor laser to reduce the intensity of the returning light as much as possible. For example, the commonly used technical means on the market is to increase the isolation filter in the red light tube, but the anti-return effect is still poor. SUMMARY

[0003] The purpose of the embodiments of the present application is to provide a single-mode red light semiconductor laser with high anti-reflection to solve the technical problem of poor anti-return effect in the indicating red light semiconductor laser in the related art.

[0004] The embodiments of the present application provide a single-mode red light semiconductor laser with high anti-reflection, which comprises a red light chip, a focusing lens, an isolation filter and a pigtail. The isolation filter is arranged between the focusing lens and the pigtail. The red light emitted by the red light chip is coupled into the pigtail through the focusing lens and the isolation filter in sequence. The pigtail expands the returning light and isolates and absorbs the returning light.

[0005] In the single-mode red light semiconductor laser with high anti-reflection, the single-mode red light semiconductor laser with high anti-reflection comprises a red light chip, a focusing lens, an isolation filter and a pigtail. The isolation filter is arranged between the focusing lens and the pigtail. The red light emitted by the red light chip is coupled into the pigtail through the focusing lens and the isolation filter in sequence. The pigtail also expands the external returning light and isolates and absorbs the returning light. Specifically, when the external light returns to the red light chip, the cladding returning light is first stripped through the pigtail corrosion area, then expanded through the optical fiber quartz rod, and then dissipated on the threaded cavity wall after being reflected by the isolation filter. The single-mode red light semiconductor laser with high anti-reflection is provided. While the isolation filter is used to isolate the returning light of the red light, the pigtail is used to expand the returning light, which can effectively reduce the power density of the returning light and improve the absorption efficiency of the returning light, and then improve the isolation effect of the returning light. BRIEF DESCRIPTION OF DRAWINGS

[0006] Figure 1 It is a structure section schematic view of the single-mode red light semiconductor laser with high anti-reflection provided by the embodiments of the present application.

[0007] Figure 2 is a structural exploded schematic view of an anti-high-reflection single-mode red light semiconductor laser provided by an embodiment of the present application;

[0008] Figure 3 is a structural cross-sectional schematic view of a pigtail provided by an embodiment of the present application;

[0009] Figure 4 is a front view of a filter fixing base provided by an embodiment of the present application;

[0010] Figure 5 is a cross-sectional schematic view of a filter fixing base provided by an embodiment of the present application;

[0011] wherein the red light chip 1, the metal seat 2, the focusing lens 3, the isolation filter 4, the filter fixing base 5, the transition metal ring 6, the pigtail external metal cover 7, the pigtail 8, and the pigtail protection sleeve 9. DETAILED DESCRIPTION

[0012] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of protection of the present application.

[0013] It should be understood that each of the steps recorded in the method embodiments of the present disclosure can be executed in different orders and / or in parallel. In addition, the method embodiments can include additional steps and / or omit the execution of the steps shown. The scope of the present disclosure is not limited in this respect.

[0014] The term "comprising" and variations thereof as used in the present disclosure are open-ended, that is, "including but not limited to". The term "based on" is "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". Related definitions of other terms will be given in the following description.

[0015] To solve the technical problems existing in the related art, the present application provides an anti-high-reflection single-mode red light semiconductor laser, please see Figures 1 to 2 , Figure 1 is a structural cross-sectional schematic view of an anti-high-reflection single-mode red light semiconductor laser provided by an embodiment of the present application, and Figure 2It is a structure explosion schematic diagram of the anti-high-reflection single-mode red light semiconductor laser provided by the embodiment of the present application. Specifically, the anti-high-reflection single-mode red light semiconductor laser comprises a red light chip, a focusing lens, an isolation filter and a pigtail, the isolation filter is arranged between the focusing lens and the pigtail, and the red light emitted by the red light chip is coupled into the pigtail through the focusing lens and the isolation filter in sequence, and the pigtail expands the back light and isolates and absorbs the back light.

[0016] In an embodiment, in the provided anti-high-reflection single-mode red light semiconductor laser, the red light chip, the focusing lens, the isolation filter and the pigtail are included, for the generated red light, the red light is coupled into the pigtail through the focusing lens, the back light to the red light chip first passes through the cavity of the pigtail, and most of the energy of the cladding transmission is removed by the region (such as the etching region) arranged in the cavity, and then the back light is irradiated to the isolation filter after the expansion processing of the pigtail, and the isolation filter isolates the external back light, and the threaded cavity in the transition metal ring arranged between the isolation filter and the pigtail also dissipates the back light to avoid the back light directly irradiating the red light chip to cause the failure of the red light chip.

[0017] Exemplarily, the red light emitted by the red light chip in the anti-high-reflection single-mode red light semiconductor laser first passes through the coupling and focusing processing of the focusing lens, and then enters the pigtail through the isolation filter. For the external back light, the back light is first processed by the pigtail, and then isolated by the isolation filter to avoid the back light directly irradiating the red light chip.

[0018] Actually, when the pigtail processes the back light, the structure or material characteristics of the pigtail are used to process the back light, the power of the back light directly irradiating the isolation filter is reduced by expanding the back light or reducing the power, and then the isolation processing of the back light can be more effectively completed through the processing of the isolation filter. That is, the pigtail has the ability to expand the back light and reduce the power density.

[0019] Further, the anti-high-reflection single-mode red light semiconductor laser further comprises a pigtail external metal cover, and the pigtail external metal cover wraps the pigtail.

[0020] Specifically, referring to Figure 2 , the pigtail external metal cover is used for protecting and fixing the pigtail.

[0021] Further, the pigtail comprises an incident end and an emission end, wherein the incident end and the emission end form an etching region in the pigtail external metal cover, and the etching region isolates and absorbs the back light.

[0022] Specifically, when the tail fiber external metal cover wraps the tail fiber, the incident end and the exit end of the tail fiber are wrapped, and at the same time, the incident end and the exit end form a cavity inside the tail fiber external metal cover, that is, a corrosion area, and the corrosion area can effectively isolate and absorb the back-returning light, as shown in Figure 3 , Figure 3 is a structural cross-sectional view of a tail fiber provided by an embodiment of the present application, wherein Figure 3 the cross-sectional view of the tail fiber contains a tail fiber external metal cover, at this time, the incident end on the left and the exit end on the right are both wrapped by the tail fiber external metal cover, and the incident end and the exit end are not directly connected in the tail fiber external metal cover, but form a cavity as shown in Figure 3 as a corrosion area.

[0023] In order to realize the single-mode output of the high-reflection-resistant single-mode red semiconductor laser, for the formed corrosion area, high-order mode fields are filtered out to ensure the single-mode output of the tail fiber.

[0024] Further, the incident end face of the incident end of the tail fiber is a bevel. Specifically, the incident end face can present a bevel of eight degrees. Moreover, the incident end of the tail fiber can be composed of a quartz rod material.

[0025] Further, the high-reflection-resistant single-mode red semiconductor laser further comprises a transition metal ring, and the tail fiber external metal cover is fixed inside the transition metal ring.

[0026] Specifically, referring to Figure 2 , the high-reflection-resistant single-mode red semiconductor laser further comprises a transition metal ring, in combination with Figure 1 , the transition metal ring is used to wrap and fix the dangerous external metal cover, and realize the integrity and closedness of the high-reflection-resistant single-mode red semiconductor laser.

[0027] Further, the high-reflection-resistant single-mode red semiconductor laser further comprises a filter fixing base, and the isolation filter is attached to the filter fixing base near one end of the focusing lens.

[0028] Specifically, the high-reflection-resistant single-mode red semiconductor laser contains an isolation filter for isolating the back-returning light, and the isolation filter is arranged between the focusing lens and the tail fiber. When the isolation filter is fixed, the filter fixing base can be used to attach and fix the isolation filter to the filter fixing base near one end of the focusing lens, so that after the red light is coupled by the focusing lens, the single-mode laser is output into the tail fiber through the isolation filter.

[0029] Further, the end face of the filter fixing base near one end of the focusing lens presents a bevel.

[0030] Specifically, referring to Figure 4 ,Figure 4 is a front view of the filter fixing base provided by the embodiment of the present application, and Figure 4 In the filter fixing base shown in the figure, the upper part is used for attaching and fixing the isolation filter, that is, the upper part is the end close to the focusing lens, and the plane of the end is inclined, for example, at an angle of 8 degrees, and in combination with Figure 1 and Figure 2 The lower part of the filter fixing base is used for attaching and connecting with the transition metal ring.

[0031] Further, the filter fixing base contains a cavity, and the light path of the red light reaches the pigtail through the cavity.

[0032] Specifically, referring to Figure 5 , Figure 5 is a cross-sectional view of the filter fixing base provided by the embodiment of the present application, and in combination with Figure 1 and Figure 2 The filter fixing base is not a solid structure, but a hollow structure that can be used for the red light to pass through, and the return light of the pigtail will also be reflected to the isolation filter through the cavity of the filter fixing base.

[0033] Further, the inner wall of the cavity is in a rough thread form.

[0034] Specifically, as shown in Figure 5 The inner wall of the cavity of the filter fixing base presents a corresponding thread form, in order to improve the absorption of the return light, the inner wall of the cavity of the filter fixing base is set to be in a rough thread form, so as to reflect the return light reflected by the pigtail for multiple times, thereby improving the absorption efficiency of the return light.

[0035] Further, the high-anti-reflection single-mode red light semiconductor laser also includes a metal seat, one end of the metal seat is fixed with the red light chip, the focusing lens is fixed inside the metal seat, and the focusing lens is arranged on the light path of the red light.

[0036] Specifically, in combination with Figure 1 and Figure 2 It can be seen that the metal seat is used for fixing the red light chip and the focusing lens, and the focusing lens is fixed on the light path of the red light emitted by the red light chip.

[0037] In combination with Figures 1 to 5The anti-high-reflection single-mode red light semiconductor laser couples the red light emitted by the red light chip through the focusing lens, and the red light is filtered by the etching area in the tail fiber to output the single-mode laser. For the external return light, the quartz rod structure of the incident end face of the tail fiber expands the beam of the return light, reduces the power density of the laser leaving the tail fiber, and processes the end face of the quartz rod at an angle of eight degrees to reduce the return loss of the device. At the same time, the incident end face of the tail fiber and the focusing lens are provided with a coating filter, that is, an isolation filter, to filter the return light propagating from the tail fiber to the chip, and the filter mounting base is internally threaded to further dissipate the reflected return light in the cavity.

[0038] In summary, the anti-high-reflection single-mode red light semiconductor laser includes a red light chip, a focusing lens, an isolation filter, and a tail fiber. The isolation filter is arranged between the focusing lens and the tail fiber. The red light emitted by the red light chip is coupled into the tail fiber through the focusing lens and the isolation filter in sequence. The tail fiber also expands the beam of the external return light and isolates and absorbs the return light. The anti-high-reflection single-mode red light semiconductor laser isolates and absorbs the external return light using the isolation filter, expands the beam of the return light using the tail fiber, effectively reduces the power density of the return light, and improves the absorption efficiency of the return light, thereby improving the isolation effect of the return light.

[0039] The anti-high-reflection single-mode red light semiconductor laser provided by the embodiment of the present application is described in detail above. The principles and implementation methods of the present application are described by applying specific examples. The above description of the embodiments is only used to help understand the method and core idea of the present application. For those skilled in the art, the specific implementation methods and application ranges can be changed according to the principles of the present application. In summary, the content of the specification should not be understood as a limitation of the present application. Moreover, those skilled in the art can make several improvements and refinements without departing from the principles of the present application. These improvements and refinements are also considered within the protection scope of the present application.

Claims

1. A single mode red light semiconductor laser with high reflectivity, characterized in that, The anti-high-reflection single-mode red light semiconductor laser comprises a red light chip, a focusing lens, an isolation filter and a pigtail, the isolation filter is arranged between the focusing lens and the pigtail, red light emitted by the red light chip is coupled into the pigtail through the focusing lens and the isolation filter in sequence, and the pigtail expands the return light and isolates and absorbs the return light. The anti-high-reflection single-mode red light semiconductor laser further comprises a pigtail external metal cover, and the pigtail external metal cover wraps the pigtail.

2. The anti-high reflection single mode red light semiconductor laser of claim 1, wherein, The pigtail comprises an incident end and an emission end, wherein the incident end and the emission end form a corrosion area inside the pigtail external metal cover, and the corrosion area isolates and absorbs the return light.

3. The anti-high reflection single mode red light semiconductor laser of claim 2, wherein, An incident end face of the incident end is a bevel.

4. The anti-high reflection single mode red light semiconductor laser of claim 3, wherein, The anti-high-reflection single-mode red light semiconductor laser further comprises a transition metal ring, and the pigtail external metal cover is fixed inside the transition metal ring.

5. The anti-high reflection single mode red light semiconductor laser as claimed in claim 2, wherein, The anti-high-reflection single-mode red light semiconductor laser further comprises a filter fixing base, and the isolation filter is attached to one end of the filter fixing base close to the focusing lens.

6. The anti-high reflection single mode red light semiconductor laser as claimed in claim 5, wherein, An end face of the filter fixing base close to the focusing lens is a bevel.

7. The anti-high reflection single mode red light semiconductor laser of claim 6, wherein, The filter fixing base comprises a cavity, and a light path of the red light passes through the cavity to reach the pigtail.

8. The anti-high reflection single mode red light semiconductor laser of claim 6, wherein, An inner wall of the cavity is rough thread.

9. The anti-high reflection single mode red light semiconductor laser of claim 8, wherein, The anti-high-reflection single-mode red light semiconductor laser further comprises a metal seat, one end of the metal seat fixes the red light chip, the focusing lens is fixed inside the metal seat, and the focusing lens is arranged on the light path of the red light.

10. The anti-high reflection single mode red light semiconductor laser of claim 1, wherein, ​

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