Multifunctional ion beam etching and deposition device
By introducing first and second ion sources into the ion beam etching equipment and combining them with a rotary drive mechanism, a multifunctional sputtering, etching, and cleaning effect is achieved, solving the problem of the single function of existing equipment, reducing manufacturing costs, and improving the uniformity and bonding strength of thin film deposition.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SUZHOU YOULUN VACUUM EQUIP TECH CO LTD
- Filing Date
- 2025-05-07
- Publication Date
- 2026-05-01
AI Technical Summary
Existing ion beam etching equipment has limited functionality, cannot simultaneously perform sputtering, etching, and cleaning, and is complex in structure, difficult to manufacture, and costly.
A multifunctional ion beam etching and deposition apparatus is designed, which uses a first ion source and a second ion source for bombarding the target surface and pre-cleaning the wafer substrate to be coated, respectively. Combined with a rotary drive mechanism, it realizes sputtering, etching and cleaning functions, simplifying the structure and reducing costs.
It achieves simultaneous sputtering, etching, and cleaning functions, simplifies the equipment structure, reduces manufacturing costs, and improves the uniformity and bonding strength of thin film deposition.
Smart Images
Figure CN224186248U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of vacuum evaporation equipment technology, and more specifically, relates to a multifunctional ion beam etching and deposition device. Background Technology
[0002] Ion beam etching (IBE) is a semiconductor etching process, primarily a physical etching method. Based on the sputtering principle, it uses a low-energy parallel ion beam to bombard the substrate surface, sputtering out the material from areas not covered by the mask, thus achieving the etching purpose. It is mainly used for the fabrication of micro-patterns in integrated circuits, components, and sensors. Conventional ion beam etching uses inert gas ions such as Ar+, which is a purely physical etching process, and therefore can etch any material, transferring 3D mask patterns to the substrate surface with high fidelity. Reactive ion beam etching (RIBE), on the other hand, introduces reactive gases to form reactive ions for etching. Ion beam etching is an atomic-level processing method, especially Ar+ etching, which does not exhibit lateral corrosion and has top-tier etching resolution. Theoretically, it is believed to be able to etch structures at the atomic size and achieve excellent etching uniformity.
[0003] Ion beams can also be used for cleaning. By bombarding the surface of substrates and targets with ion beams, surface layers can be removed. Ion beam cleaning is the most thorough method for purifying material surfaces, achieving atomically clean surfaces. It poses no problem for cleaning metallic materials; for cleaning alloys, compounds, and multi-component materials, by changing the ion beam incident angle and adding other gases, the surface can be rapidly thinned and polished while maintaining the standard chemical composition of the elements on the material surface. Ion beam polishing can achieve extremely low surface roughness.
[0004] Since ion beams have multiple functions such as ion beam sputtering deposition, ion beam-assisted sputtering, ion beam etching, ion beam cleaning, ion beam polishing, and ion beam thinning, existing technologies often produce equipment with only one function, such as lacking co-sputtering or heating functions, or being unable to sputter, etch, and clean simultaneously. In addition, the equipment has a complex structure, is difficult to manufacture, and has high manufacturing costs. Utility Model Content
[0005] Therefore, to solve the above-mentioned technical problems, this utility model proposes a multifunctional ion beam etching and deposition device, including a cavity 10, a target 20 connected inside the cavity 10, a stage mechanism 30 located diagonally above the target 20, the stage mechanism 30 being connected to the cavity 10 via a rotation drive mechanism 40, the rotation drive mechanism 40 driving the stage mechanism 30 to adjust its angle, a wafer substrate to be coated being mounted on the stage mechanism 30, a first ion source 50 connected to one side of the cavity 10 and located at the lower part of the same side of the stage mechanism 30, and a second ion source 60 connected to the other side and located at the upper part of the same side of the target 20, the first ion source 50 being used for bombardment. The target 20 is struck, and the target 20 reflects the light to form a secondary electron beam. The secondary electron beam deposits the sputtered film onto the wafer substrate to be coated, forming a thin film. The second ion source 60 is used to pre-clean the wafer substrate to improve its coating performance, or to etch the film deposited on the wafer substrate to remove material from a specified area on the surface of the wafer substrate. It also assists in deposition, enhances the bonding strength between the film and the wafer substrate, and reduces defects. By providing a first ion source 50 and a second ion source 60, the system simultaneously performs sputtering, etching, and cleaning functions, solving the problem of limited functionality in existing equipment. Moreover, the system has a simple structure, is easy to manufacture, and reduces manufacturing costs.
[0006] A multifunctional ion beam etching and deposition apparatus includes a cavity 10, within which a target 20 is connected. A stage mechanism 30 is positioned diagonally above the target 20. The stage mechanism 30 is connected to the cavity 10 via a rotation drive mechanism 40, which adjusts the angle of the stage mechanism 30. A wafer substrate to be deposited is mounted on the stage mechanism 30. A first ion source 50 is connected to one side of the cavity 10 and is located below the stage mechanism 30 on the same side. A second ion source 60 is connected to the other side of the cavity 10 and is positioned... On the upper part of the same side of the target material 20, the first ion source 50 is used to bombard the surface of the target material 20. The target material 20 reflects and forms a secondary electron beam. The secondary electron beam deposits the sputtered film material onto the wafer substrate to be coated to form a thin film. The second ion source 60 is used to pre-clean the wafer substrate to be coated so that it can be coated better, or to etch the thin film deposited on the wafer substrate to remove the material in a specified area on the surface of the wafer substrate. It also plays a role in assisting deposition, enhancing the bonding strength between the thin film and the wafer substrate, and reducing defects.
[0007] Furthermore, a cover 70 is connected to the outer side of the target material 20, and there is a gap between the cover 70 and the target material 20. The side of the cover 70 near the first ion source 50 is a plane 80, and an opening 90 is provided on the plane 80. The size of the opening 90 is the same as the size of the target material 20.
[0008] Furthermore, the ion beam of the first ion source 50 forms a 45º angle with the horizontal plane of the target material 20, resulting in a good bombardment effect.
[0009] Furthermore, the target material 20 reflects a secondary electron beam that is perpendicular to the wafer substrate to be coated, and the angle between the secondary electron beam and the horizontal plane of the target material 20 is 45º. At this time, the deposition effect on the wafer substrate to be coated is good.
[0010] Furthermore, the rotary drive mechanism 40 includes a drive motor 401, a reducer 402, and a central control platform 403. The output end of the drive motor 401 is connected to one end of the reducer 402, and the other end of the reducer 402 is connected to the central control platform 403. A through hole 100 is provided at the center of the central control platform 403.
[0011] Furthermore, the rotary drive mechanism 40 also includes a drive shaft 404 and a fixed base 405. One end of the drive shaft 404 is connected to the stage mechanism 30, and the other end is sleeved with the fixed base 405. The drive shaft 404 rotates relative to the fixed base 405. The fixed base 405 is connected to the side of the central control platform 403 away from the drive motor 401. After one end of the drive shaft 404 is sleeved with the fixed base 405, it passes through the through hole 100 and rotates within the through hole 100. Driven by the drive motor 401, the drive shaft 404 rotates, thereby driving the stage mechanism 30 to rotate, thus adjusting the adjustment angle of the stage mechanism 30, so that the coating effect of the wafer substrate to be coated is good.
[0012] Furthermore, the drive motor 401 is an electric cylinder, which has high-precision control and good dynamic performance, accurate positioning, and fast response.
[0013] Furthermore, the stage mechanism 30 includes a stage plate 301 and a rotating arm 302. The rotating arm 302 is connected to one side of the top of the stage plate 301. The rotating arm 302 is connected to the drive shaft 404. The wafer substrate to be coated is connected to the top center of the stage plate 301. The drive shaft 404 drives the rotating arm 302 to rotate under the drive of the drive motor 401, thereby driving the stage plate 301 to rotate.
[0014] Furthermore, the central control platform 403 is provided with a position sensor 110 and a buffer device 120 on the side near the drive motor 401, so as to perform dual limiting on the rotation position of the platform 301, thereby making the platform 301 reach the auxiliary limited rotation position more accurately.
[0015] Furthermore, the distribution of the position sensor 110 and / or the buffer device 120 allows the rotational position of the stage plate 301 to remain at four positions: 90°, 45°, 135°, and 0°. When the rotational position of the stage plate 301 is 0°, it is used to install or remove the wafer substrate to be coated. When the rotational position of the stage plate 301 is 90°, the ion beam of the first ion source 50 can bombard the wafer substrate to be coated from the front. When the rotational position of the stage plate 301 is 45° or 135°, the ion beam of the second ion source 60 can bombard the edge of the wafer substrate to be coated.
[0016] Furthermore, a dual-crystal sensor 130 is provided on the stage plate 301 near the edge of the wafer substrate to be coated, and the dual-crystal sensor 130 is used to monitor the coating status.
[0017] The beneficial effects of this utility model are as follows: This utility model proposes a multifunctional ion beam etching and deposition device, including a cavity 10. A target material 20 is connected inside the cavity 10. A stage mechanism 30 is provided diagonally above the target material 20. The stage mechanism 30 is connected to the cavity 10 via a rotation drive mechanism 40. The rotation drive mechanism 40 drives the stage mechanism 30 to adjust its angle. A wafer substrate to be coated is placed on the stage mechanism 30. A first ion source 50 is connected to one side of the cavity 10 and is located at the lower part of the same side of the stage mechanism 30. A second ion source 60 is connected to the other side and is located at the upper part of the same side of the target material 20. The first ion source 50 is used to bombard the target material 20. The target material 20 reflects a secondary electron beam, which deposits the sputtered film onto the wafer substrate to be coated, forming a thin film. The second ion source 60 is used to pre-clean the wafer substrate to improve its coating performance, or to etch the film deposited on the wafer substrate to remove material from a designated area on the surface of the wafer substrate. It also assists in deposition, enhances the bonding strength between the film and the wafer substrate, and reduces defects. By providing a first ion source 50 and a second ion source 60, the system simultaneously performs sputtering, etching, and cleaning functions, solving the problem of limited functionality in existing equipment. Moreover, the system has a simple structure, is easy to manufacture, and reduces manufacturing costs. Attached Figure Description
[0018] Figure 1This is a schematic diagram of the overall structure of a multifunctional ion beam etching and deposition device according to the present invention.
[0019] Figure 2 This is a partial structural schematic diagram of a multifunctional ion beam etching and deposition device according to the present invention.
[0020] Figure 3 This is a partial structural schematic diagram of a multifunctional ion beam etching and deposition device according to the present invention.
[0021] Figure 4 This is a partial structural schematic diagram of a multifunctional ion beam etching and deposition device according to the present invention.
[0022] Explanation of key component symbols:
[0023] Cavity 10, target material 20, stage mechanism 30, stage plate 301, rotating arm 302, rotation drive mechanism 40, drive motor 401, reducer 402, central control platform 403, transmission shaft 404, fixed base 405, first ion source 50, second ion source 60, cover 70, plane 80, opening 90, through hole 100, position sensor 110, buffer device 120, dual crystal sensor 130.
[0024] The following detailed description, in conjunction with the accompanying drawings, will further illustrate this utility model. Detailed Implementation
[0025] The following embodiments are described to aid in understanding this application. These embodiments are not, and should not be, construed in any way as limiting the scope of protection of this application.
[0026] In the following description, those skilled in the art will recognize that throughout this discussion, components may be described as individual functional units (which may include subunits), but those skilled in the art will recognize that various components or portions thereof may be divided into individual components or may be integrated together (including integrated within a single system or component).
[0027] Furthermore, the connection between components or systems is not intended to be limited to a direct connection; on the contrary, data between these components may be modified, reformatted, or otherwise altered by intermediate components. Additionally, other or fewer connections may be used. It should also be noted that the terms "connection," "link," or "input" should be understood to include direct connections, indirect connections via one or more intermediate devices, and wireless connections. Example 1:
[0028] like Figure 1 The diagram shown is a schematic representation of the overall structure of a multifunctional ion beam etching and deposition apparatus according to this invention; Figure 2The diagram shown is a partial structural schematic of a multifunctional ion beam etching and deposition apparatus according to this invention; Figure 3 The diagram shown is a partial structural schematic of a multifunctional ion beam etching and deposition apparatus according to this invention; Figure 4 The diagram shown is a partial structural schematic of a multifunctional ion beam etching and deposition apparatus according to this invention.
[0029] A multifunctional ion beam etching and deposition apparatus includes a cavity 10, within which a target 20 is connected. A stage mechanism 30 is positioned diagonally above the target 20. The stage mechanism 30 is connected to the cavity 10 via a rotation drive mechanism 40, which adjusts the angle of the stage mechanism 30. A wafer substrate to be deposited is mounted on the stage mechanism 30. A first ion source 50 is connected to one side of the cavity 10 and is located below the stage mechanism 30 on the same side. A second ion source 60 is connected to the other side of the cavity 10 and is positioned... On the upper part of the same side of the target material 20, the first ion source 50 is used to bombard the surface of the target material 20. The target material 20 reflects and forms a secondary electron beam. The secondary electron beam deposits the sputtered film material onto the wafer substrate to be coated to form a thin film. The second ion source 60 is used to pre-clean the wafer substrate to be coated so that it can be coated better, or to etch the thin film deposited on the wafer substrate to remove the material in a specified area on the surface of the wafer substrate. It also plays a role in assisting deposition, enhancing the bonding strength between the thin film and the wafer substrate, and reducing defects.
[0030] A cover 70 is connected to the outer side of the target material 20. There is a gap between the cover 70 and the target material 20. The side of the cover 70 near the first ion source 50 is a plane 80, and an opening 90 is provided on the plane 80. The size of the opening 90 is the same as the size of the target material 20.
[0031] The ion beam of the first ion source 50 has an angle of 45º with the horizontal plane of the target material 20, resulting in a good bombardment effect. The target material 20 reflects and forms a secondary electron beam that is perpendicular to the wafer substrate to be coated, and the secondary electron beam has an angle of 45º with the horizontal plane of the target material 20. At this time, the deposition effect on the wafer substrate to be coated is good.
[0032] The rotary drive mechanism 40 includes a drive motor 401, a reducer 402, and a central control platform 403. The output end of the drive motor 401 is connected to one end of the reducer 402, and the other end of the reducer 402 is connected to the central control platform 403. A through hole 100 is provided at the center of the central control platform 403. The rotary drive mechanism 40 also includes a transmission shaft 404 and a fixed base 405. One end of the transmission shaft 404 is connected to the platform mechanism 30, and the other end is sleeved with the fixed base 405. 04. The fixed base 405 is connected to the side of the central control platform 403 away from the drive motor 401. One end of the transmission shaft 404 is sleeved with the fixed base 405, passes through the through hole 100, and rotates within the through hole 100. Driven by the drive motor 401, the transmission shaft 404 is rotated, which in turn drives the stage mechanism 30 to rotate, thereby adjusting the adjustment angle of the stage mechanism 30 to achieve a good coating effect on the wafer substrate to be coated.
[0033] The drive motor 401 is an electric cylinder, which features high-precision control, excellent dynamic performance, accurate positioning, and fast response.
[0034] The stage mechanism 30 includes a stage plate 301 and a rotating arm 302. The rotating arm 302 is connected to one side of the top of the stage plate 301. The rotating arm 302 is connected to the drive shaft 404. The wafer substrate to be coated is connected to the top center of the stage plate 301. The drive shaft 404 drives the rotating arm 302 to rotate under the drive of the drive motor 401, thereby driving the stage plate 301 to rotate.
[0035] The central control platform 403 is equipped with a position sensor 110 and a buffer device 120 on the side near the drive motor 401, so as to perform dual limiting on the rotation position of the platform 301, thereby making the platform 301 reach the auxiliary limited rotation position more accurately.
[0036] The distribution of the position sensor 110 and / or the buffer device 120 allows the stage plate 301 to rotate to four positions: 90°, 45°, 135°, and 0°. When the stage plate 301 rotates to 0°, it is used to install or remove the wafer substrate to be coated. When the stage plate 301 rotates to 90°, the ion beam of the first ion source 50 can bombard the wafer substrate from the front. When the stage plate 301 rotates to 45° or 135°, the ion beam of the second ion source 60 can bombard the edge of the wafer substrate to be coated.
[0037] A dual-crystal sensor 130 is provided on the stage plate 301 near the edge of the wafer substrate to be coated. The dual-crystal sensor 130 is used to monitor the coating status.
[0038] The beneficial effects of this utility model are as follows: This utility model proposes a multifunctional ion beam etching and deposition device, including a cavity 10. A target material 20 is connected inside the cavity 10. A stage mechanism 30 is provided diagonally above the target material 20. The stage mechanism 30 is connected to the cavity 10 via a rotation drive mechanism 40. The rotation drive mechanism 40 drives the stage mechanism 30 to adjust its angle. A wafer substrate to be coated is placed on the stage mechanism 30. A first ion source 50 is connected to one side of the cavity 10 and is located at the lower part of the same side of the stage mechanism 30. A second ion source 60 is connected to the other side and is located at the upper part of the same side of the target material 20. The first ion source 50 is used to bombard the target material 20. The target material 20 reflects a secondary electron beam, which deposits the sputtered film onto the wafer substrate to be coated, forming a thin film. The second ion source 60 is used to pre-clean the wafer substrate to improve its coating performance, or to etch the film deposited on the wafer substrate to remove material from a designated area on the surface of the wafer substrate. It also assists in deposition, enhances the bonding strength between the film and the wafer substrate, and reduces defects. By providing a first ion source 50 and a second ion source 60, the system simultaneously performs sputtering, etching, and cleaning functions, solving the problem of limited functionality in existing equipment. Moreover, the system has a simple structure, is easy to manufacture, and reduces manufacturing costs.
[0039] The embodiments described above are merely illustrative of several implementations of this utility model, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of this utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and these all fall within the protection scope of this utility model. Therefore, the protection scope of this utility model patent should be determined by the appended claims.
Claims
1. A multifunctional ion beam etching and deposition apparatus, comprising a cavity (10), wherein a target (20) is connected inside the cavity (10), and a stage mechanism (30) is provided diagonally above the target (20). The stage mechanism (30) is connected to the cavity (10) via a rotation drive mechanism (40), the rotation drive mechanism (40) drives the stage mechanism (30) to adjust its angle, and a wafer substrate to be coated is provided on the stage mechanism (30), characterized in that: A first ion source (50) is connected to one side of the cavity (10) and is located at the lower part of the same side of the stage mechanism (30). A second ion source (60) is connected to the other side and is located at the upper part of the same side of the target material (20). The first ion source (50) is used to bombard the surface of the target material (20). The target material (20) reflects and forms a secondary electron beam. The secondary electron beam deposits the sputtered film material onto the wafer substrate to be coated to form a thin film. The second ion source (60) is used to pre-clean the wafer substrate to be coated so that it can be coated better, or to etch the thin film deposited on the wafer substrate to be coated.
2. The multifunctional ion beam etching and deposition apparatus according to claim 1, characterized in that: The target (20) is connected to a cover (70) on the outside. There is a gap between the cover (70) and the target (20). The side of the cover (70) near the first ion source (50) is a plane (80), and an opening (90) is provided on the plane (80). The size of the opening (90) is the same as the size of the target (20).
3. The multifunctional ion beam etching and deposition apparatus according to claim 2, characterized in that: The ion beam of the first ion source (50) forms an angle of 45° with the horizontal plane of the target material (20).
4. The multifunctional ion beam etching and deposition apparatus according to claim 3, characterized in that: The target material (20) reflects a secondary electron beam that is perpendicular to the wafer substrate to be coated, and the angle between the secondary electron beam and the horizontal plane of the target material (20) is 45°.
5. The multifunctional ion beam etching and deposition apparatus according to claim 1, characterized in that: The rotary drive mechanism (40) includes a drive motor (401), a reducer (402) and a central control platform (403). The output end of the drive motor (401) is connected to one end of the reducer (402), and the other end of the reducer (402) is connected to the central control platform (403). A through hole (100) is provided at the center of the central control platform (403).
6. The multifunctional ion beam etching and deposition apparatus according to claim 5, characterized in that: The rotary drive mechanism (40) further includes a drive shaft (404) and a fixed seat (405). One end of the drive shaft (404) is connected to the platform mechanism (30), and the other end is sleeved with the fixed seat (405). The drive shaft (404) rotates relative to the fixed seat (405). The fixed seat (405) is connected to the side of the central control platform (403) away from the drive motor (401). After one end of the drive shaft (404) is sleeved with the fixed seat (405), it passes through the through hole (100) and rotates within the through hole (100).
7. The multifunctional ion beam etching and deposition apparatus according to claim 6, characterized in that: The stage mechanism (30) includes a stage plate (301) and a rotating arm (302). The rotating arm (302) is connected to one side of the top of the stage plate (301). The rotating arm (302) is connected to the drive shaft (404). The wafer substrate to be coated is connected to the top center of the stage plate (301).
8. The multifunctional ion beam etching and deposition apparatus according to claim 7, characterized in that: The central control platform (403) is equipped with a position sensor (110) and a buffer device (120) on the side near the drive motor (401).
9. The multifunctional ion beam etching and deposition apparatus according to claim 8, characterized in that: The distribution of the position sensor (110) and / or the buffer device (120) allows the rotation position of the stage plate (301) to remain at four positions: 90°, 45°, 135°, and 0°. When the rotation position of the stage plate (301) is 0°, it is used to install or remove the wafer substrate to be coated. When the rotation position of the stage plate (301) is 90°, the ion beam of the first ion source (50) can bombard the wafer substrate to be coated from the front. When the rotation position of the stage plate (301) is 45° or 135°, the ion beam of the second ion source (60) can bombard the edge of the wafer substrate to be coated.
10. The multifunctional ion beam etching and deposition apparatus according to claim 9, characterized in that: A dual-crystal sensor (130) is provided on the stage plate (301) near the edge of the wafer substrate to be coated. The dual-crystal sensor (130) is used to monitor the coating status.