Cold plasma device
By introducing structures such as ring tubes, heat-conducting plates, semiconductor cooling chips, and turbine fans into the cold plasma device, the problems of uneven gas distribution and overheating of the electrode plates were solved, achieving uniform gas distribution and effective cooling of the electrode plates, thus preventing thermal runaway.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SHANGHAI ZHIZHONG CONSTR INTELLIGENCE ENG CO LTD
- Filing Date
- 2025-06-09
- Publication Date
- 2026-06-23
AI Technical Summary
Existing cold plasma devices suffer from problems such as uneven gas distribution and overheating of electrode plates, leading to localized overheating or uneven reactions, and lack effective heat dissipation mechanisms.
A cold plasma device was designed, comprising a reaction chamber, electrode plates, an insulator, a ring tube, a heat-conducting plate, a semiconductor cooling chip, and a turbine fan, which solves the above problems through uniform gas distribution and effective heat dissipation.
This achieves uniform gas distribution and effective cooling of the electrode plates, preventing local overheating, maintaining a low-temperature environment, and avoiding thermal runaway.
Smart Images
Figure CN224401720U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to cold plasma production technical field, concretely is cold plasma device. BACKGROUND
[0002] Cold plasma is a mixture of ionized atoms or molecules and electrons. By applying a strong electric field to the gas, cold plasma can be produced. In this process, the gas particles lose their outermost electrons, partially or completely ionize, and generate active particles with equal numbers of positive and negative charges.
[0003] After searching, the existing patent (publication number: CN209475394U) discloses a kind of cold plasma device, including flexible layered generating device, the layered generating device includes contact layer, flow guide layer and electrode layer arranged in sequence, the electrode layer is connected with power supply, the contact layer specifically is the adhesive contact layer comprising medical dressing;The cold plasma device provided in the present application can be treated without handheld cold plasma tool, can act on the surface of larger area once, improve treatment efficiency, improve treatment effect by promoting medical dressing layer to act on the tissue to be treated by cold plasma.
[0004] Although it can generate cold plasma, it is through top air inlet, so that gas is distributed at the top, which can cause uneven gas distribution, and easily cause local overheating or uneven reaction, and a large amount of heat is generated when the electrode sheet is powered on, and there is no heat dissipation mechanism, which can cause heat runaway. UTILITY MODEL CONTENT
[0005] In view of the deficiencies of the prior art, the cold plasma device is provided, which solves the problems raised in the above background art.
[0006] To achieve the above purpose, the utility model realizes through the following technical scheme: cold plasma device, including reaction cavity, the reaction cavity, the inside of the reaction cavity is fixed with two electrode sheets, two The insulator is arranged between the electrode sheet, the outer side wall of the insulator is fixed with a plurality of connecting blocks, the other end of the connecting block is fixedly connected with the inner side wall of the reaction cavity, the insulator is respectively and two The ring-shaped pipe is arranged between the electrode sheet;
[0007] The reaction cavity is directly fixed with connecting pipe, two ends of the connecting pipe are fixedly connected with two ring-shaped pipes respectively, the outer side wall of the connecting pipe is fixed with air inlet pipe, the right side of the reaction cavity is fixed with discharge port, a plurality of air outlet holes are formed in the outer side wall of the ring-shaped pipe, the right side of the reaction cavity is fixed with power line.
[0008] Preferably, the top and bottom of the reaction cavity are fixed with a plurality of threaded barrels, the upper and lower sides of the reaction cavity are provided with turbine fans, the turbine fans and the threaded barrels are fixedly connected through screws, the inside of the reaction cavity is fixed with a heat conduction plate, and the side, away from the electrode sheet, of the heat conduction plate is fixed with a semiconductor refrigeration sheet.
[0009] Preferably, the heat conduction plate and the electrode sheet are provided with silica gel.
[0010] Preferably, the top of the semiconductor refrigeration sheet is provided with a heat dissipation block.
[0011] Preferably, the heat conduction plate is made of beryllium oxide ceramic, and the heat dissipation block is made of aluminum alloy.
[0012] Preferably, the side, away from the reaction cavity, of the turbine fan is fixed with a gasket barrel. Beneficial effects
[0013] The cold plasma device has the following beneficial effects compared with the prior art.
[0014] The cold plasma device has the following beneficial effects compared with the prior art. BRIEF DESCRIPTION OF DRAWINGS
[0015] Figure 1 It is a structural schematic diagram of the utility model;
[0016] Figure 2 It is a side view structural schematic diagram of the utility model;
[0017] Figure 3 It is an internal structural schematic diagram of the reaction cavity in the utility model;
[0018] Figure 4 It is a structural schematic diagram of the annular pipe in the utility model.
[0019] In the drawing: 1, gas pipe; 2, connecting pipe; 3, reaction cavity; 4, power line; 5, threaded barrel; 6, gasket barrel; 7, screw; 8, turbine fan; 9, electrode sheet; 10, heat conduction plate; 11, insulator; 12, annular pipe; 13, heat dissipation block; 14, gas outlet; 15, connecting block; 16, discharge port; 17, semiconductor refrigeration sheet. DETAILED DESCRIPTION
[0020] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0021] Please see Figures 1-4 The present invention provides a technical solution: a cold plasma device, comprising a reaction chamber 3, wherein two electrode plates 9 are fixed inside the reaction chamber 3, an insulator 11 is provided between the two electrode plates 9, multiple connecting blocks 15 are fixed on the outer side wall of the insulator 11, and the other end of the connecting block 15 is fixedly connected to the inner side wall of the reaction chamber 3. An annular tube 12 is provided between the insulator 11 and the two electrode plates 9 respectively. A connecting tube 2 is directly fixed to the reaction chamber 3, and both ends of the connecting tube 2 are fixedly connected to the two annular tubes 12 respectively. An inlet pipe 1 is fixed on the outer side wall of the connecting tube 2. An outlet 16 is fixed on the right side of the reaction chamber 3. Multiple gas outlet holes 14 are opened on the outer side wall of the annular tube 12. A power line 4 is fixed on the right side of the reaction chamber 3. This can make the gas distribution uniform and avoid local overheating or uneven reaction.
[0022] Furthermore, multiple threaded cylinders 5 are fixed to the top and bottom of the reaction chamber 3. Turbine fans 8 are provided on both the upper and lower sides of the reaction chamber 3. The turbine fans 8 and the threaded cylinders 5 are fixedly connected by screws 7. A heat-conducting plate 10 is fixed inside the reaction chamber 3. A semiconductor cooling chip 17 is fixed on the side of the heat-conducting plate 10 away from the electrode plate 9, which can cool the electrode plate 9. Silica gel is provided between the heat-conducting plate 10 and the electrode plate 9 to facilitate heat conduction. A heat sink 13 is installed on the top of the semiconductor cooling chip 17 to accelerate the heat dissipation of the semiconductor cooling chip 17. The heat-conducting plate 10 is made of beryllium oxide ceramic, and the heat sink 13 is made of aluminum alloy. Beryllium oxide ceramic has the function of insulation and heat conduction, while aluminum alloy is low in cost. A pad 6 is fixed on the side of the turbine fan 8 away from the reaction chamber 3, which can raise the height of the turbine fan 8 so that the turbine fan 8 located at the bottom can exhaust air.
[0023] In operation, gas enters the connecting pipe 2 from the inlet pipe 1, then enters the two annular pipes 12, and finally exits from the outlet 14. This allows the gas to be distributed more evenly inside the reaction chamber 3. When the electrode plate 9 is energized, the electric field breaks down the gas acting as a dielectric between the electrodes to generate cold plasma, thus avoiding local overheating or uneven reaction. The semiconductor cooling chip 17 is activated, which cools the heat conduction plate 10. The heat conduction plate 10 transfers the low temperature to the electrode plate 9, thus cooling the electrode plate 9. The heat sink 13 conducts the heat from the semiconductor cooling chip 17. At the same time, the turbine fan 8 is activated, which dissipates the heat from the heat sink 13. This prevents the electrode plate 9 from overheating, maintains a low temperature environment, and prevents thermal runaway.
[0024] Furthermore, any content not described in detail in this specification is existing technology known to those skilled in the art.
[0025] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, the phrase "comprising an element defined as..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0026] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. A cold plasma device, comprising a reaction chamber (3), characterized in that: The reaction chamber (3) has two electrode plates (9) fixed inside. An insulator (11) is provided between the two electrode plates (9). Multiple connecting blocks (15) are fixed on the outer wall of the insulator (11). The other end of the connecting block (15) is fixedly connected to the inner wall of the reaction chamber (3). An annular tube (12) is provided between the insulator (11) and the two electrode plates (9). The reaction chamber (3) is directly fixed with a connecting pipe (2), and the two ends of the connecting pipe (2) are respectively fixedly connected to two annular pipes (12). An air inlet pipe (1) is fixed on the outer wall of the connecting pipe (2). An outlet (16) is fixed on the right side of the reaction chamber (3). Multiple air outlets (14) are opened on the outer wall of the annular pipe (12). A power cord (4) is fixed on the right side of the reaction chamber (3).
2. The cold plasma device according to claim 1, characterized in that: Multiple threaded cylinders (5) are fixed at the top and bottom of the reaction chamber (3). Turbine fans (8) are provided above and below the reaction chamber (3). The turbine fans (8) and the threaded cylinders (5) are fixedly connected by screws (7). A heat-conducting plate (10) is fixed inside the reaction chamber (3). A semiconductor cooling chip (17) is fixed on the side of the heat-conducting plate (10) away from the electrode plate (9).
3. The cold plasma device according to claim 2, characterized in that: Silicone is provided between the heat-conducting plate (10) and the electrode sheet (9).
4. The cold plasma device according to claim 3, characterized in that: A heat sink (13) is mounted on the top of the semiconductor cooling chip (17).
5. The cold plasma device according to claim 4, characterized in that: The heat-conducting plate (10) is made of beryllium oxide ceramic, and the heat sink (13) is made of aluminum alloy.
6. The cold plasma device according to claim 5, characterized in that: A gasket (6) is fixed on the side of the turbine fan (8) away from the reaction chamber (3).