Boundary layer to reduce the size effect of a storage device

Abstract

Method for manufacturing an integrated chip (100, 200, 300, 314, 400, 408, 500, 600, 700) by the following steps: Fabrication of a lower electrode layer (1604, 2604) over a substrate (102); Formation of an unstructured amorphous initiation layer (110, 1606, 2606) on the lower electrode layer (1604, 2604); Fabrication of a ferroelectric material interlayer (1702, 2702) on the unstructured amorphous initiation layer (110, 1606, 2606), wherein the ferroelectric material interlayer (1702, 2702) is fabricated such that it has a substantially uniform amorphous phase; Performing a tempering process configured to transform the ferroelectric material interlayer (1702, 2702) into a ferroelectric material layer (1804, 2804) with a substantially uniform orthorhombic crystalline phase; Producing an upper electrode layer (1902, 2902) over the ferroelectric material layer (1804, 2804); Performing one or more structuring processes on the upper electrode layer (1902, 2902), the ferroelectric material layer (1804, 2804), the unstructured amorphous initiation layer (110, 1606, 2606) and the lower electrode layer (1604, 2604) to fabricate a ferroelectric storage device (104); Producing an upper interlayer dielectric layer (106U) over the ferroelectric storage device (104); Establishing an upper interconnect (116, 424) extending through the upper interlayer dielectric layer to contact the ferroelectric storage device (104), Formation of a second unstructured amorphous initiation layer (502) on the ferroelectric material interlayer (1702, 2702); and Structuring the second unstructured amorphous initiation layer (502) to fabricate the ferroelectric storage device (104).

Description

BACKGROUND

[0001] Many modern electronic devices contain electronic memory configured to store data. Electronic memory can be volatile or non-volatile. Volatile memory stores data when powered on, while non-volatile memory can store data even when the power is turned off. Ferroelectric random-access memory (FeRAM) is a promising candidate for a next-generation non-volatile memory technology. This is because FeRAM devices offer numerous advantages, such as fast write time, high endurance, low power consumption, and low susceptibility to radiation damage.

[0002] US 2014 / 0 355 328 A1 discloses an integrated circuit including a ferroelectric memory cell. US 2016 / 0 118 585 A1 discloses a resistive switching device. US 2018 / 0 166 453 A1 discloses an integrated circuit including a ferroelectric memory cell. US 2020 / 0 119 047 A1 discloses a semiconductor device. US 2019 / 0 355 584 A1 discloses a first amorphous film that is crystallized. Further state of the art is known from

[0003] ONAYA, Takashi [et al.]: Improvement in ferroelectricity of HfxZr1-xO2 thin films using ZrO2 seed layer. In: Applied Physics Express, Vol. 10, 2017, No. 8, item no. 081501, 4 pp. - ISSN 1882-0778; HSAIN, H. Alex [et al.]: Compositional dependence of crystallization temperatures and phase evolution in hafnia-zirconia (HfxZr1-x)O2 thin films. In: Applied physics letters, Vol. 116, 2020, Art.-No. 192901 pp. 1-5. - ISSN 0003-6951; DE 10 2019 129 279 A1; and JAKSCHIK, Stefan [et al.]: Crystallization behavior of thin ALD-Al2O3 films. In: Thin solid films, Vol. 425, 2003, No. 1-2, pp. 216-220. - ISSN 1879-2731.

[0004] The invention is defined in the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Aspects of the present disclosure can best be understood by reference to the following detailed description taken in conjunction with the accompanying drawings. It should be noted that, in accordance with industry practice, various features are not drawn to scale. Indeed, the dimensions of various features may be arbitrarily exaggerated or reduced for the purpose of clarity of explanation: Fig. 1 shows a cross-sectional view of some embodiments of an integrated chip with a ferroelectric data storage structure having an amorphous initiation layer configured to improve the performance of the ferroelectric data storage structure. Fig. 2 shows a sectional view of some further embodiments of an integrated chip with a ferroelectric data storage structure having an amorphous initiation layer. The Fig. 3A-3B show cross-sectional views of some further embodiments of integrated chips with a ferroelectric data storage structure having an amorphous initiation layer. The Fig. 4A-4C show cross-sectional views of some further embodiments of integrated chips with a ferroelectric data storage structure having an amorphous initiation layer. The Fig. 5-7 show cross-sectional views of some further embodiments of integrated chips with a ferroelectric data storage structure having a plurality of amorphous initiation layers. Fig. 8 shows a cross-sectional view of some further embodiments of integrated chips with a ferroelectric data storage structure having a plurality of ferroelectric switching layers arranged on opposite sides of an amorphous initiation layer. Fig. 9 shows a diagram illustrating some embodiments of ferroelectric responses of ferroelectric memory devices having different sizes. Fig. 10 is a diagram illustrating some embodiments of ferroelectric response ratios of ferroelectric memory devices having different sizes. The Fig. 11A-11B show diagrams illustrating some embodiments of memory windows for ferroelectric memory devices over time. Fig. 12 shows an exemplary schematic representation of a memory circuit with a memory matrix comprising ferroelectric memory devices whose respective ferroelectric data storage structure has an amorphous initiation layer. The Fig. 13-22 show cross-sectional views of some embodiments of a method for fabricating an integrated chip with a ferroelectric data storage structure having an amorphous initiation layer. The Fig. 23-32 show sectional views of some further embodiments of a method for manufacturing an integrated chip with a ferroelectric data storage structure having an amorphous initiation layer. Fig. 33 shows a flow diagram of some embodiments of a method for manufacturing an integrated chip with a ferroelectric data storage structure having an amorphous initiation layer DETAILED DESCRIPTION

[0006] The invention is defined by claim 1, which defines a method for manufacturing an integrated chip, claim 9, which defines a method for manufacturing an integrated chip, and claim 16, which defines an integrated chip. Embodiments of the invention are provided in the dependent claims, the description, and the drawings. The following disclosure provides many different embodiments or examples for implementing various features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure.For example, in the description below, the fabrication of a first element over or on top of a second element may include embodiments in which the first and second elements are fabricated in direct contact, and may also include embodiments in which additional elements may be fabricated between the first and second elements such that the first and second elements are not in direct contact. Furthermore, throughout the present invention, reference numerals and / or letters may be repeated throughout the various examples. This repetition is for simplicity and clarity and does not, in itself, prescribe any relationship between the various embodiments and / or configurations discussed.

[0007] Furthermore, spatially relative terms such as "beneath," "under," "lower," "above," "upper," and the like may be used herein to conveniently describe the relationship of one element or structure to one or more other elements or structures illustrated in the figures. The spatially relative terms are intended to encompass other orientations of the device in use or operation, in addition to the orientation illustrated in the figures. The device may be oriented differently (rotated 90 degrees or in a different orientation), and the spatially relative descriptors used herein may be interpreted accordingly.

[0008] Ferroelectric random access memory (FeRAM) devices have a bottom electrode separated from a top electrode by a ferroelectric data storage structure comprising a ferroelectric material. The ferroelectric material has an intrinsic electric dipole that can be switched between opposite polarities by applying an external electric field. The different polarities provide the FeRAM device with different capacitances, which can be sensed as a voltage on a bit line during a read operation. The different capacitances are representative of different data states (e.g., a logical '0' or '1'), allowing the FeRAM device to digitally store data.

[0009] It is understood that some ferroelectric materials (e.g., hafnium zirconium oxide) used in a ferroelectric data storage structure can be fabricated to exhibit a plurality of different crystalline phases (e.g., monoclinic, tetragonal, and / or orthorhombic phases) due to the influence of an underlying bottom electrode during fabrication. It is further understood that the plurality of different crystalline phases of the ferroelectric material cause different ferroelectric memory devices in a memory array to exhibit different memory windows (e.g., a voltage difference on a bit line between a low data state (e.g., a logic '0') and a high data state (e.g., a logic '1')).For example, a ferroelectric memory device comprising a ferroelectric material that is 78% monoclinic, 17% orthorhombic, and 5% tetragonal may have a memory window of 0.2 volts (V), while a ferroelectric memory device comprising a ferroelectric material that is 16% monoclinic, 62% orthorhombic, and 22% tetragonal may have a memory window of 0.7 V. Therefore, a ferroelectric memory device comprising a ferroelectric material with a low orthorhombic phase may have a relatively small memory window, making it difficult to distinguish between different data states during a read operation.

[0010] As FeRAM device sizes decrease, changes in the orthorhombic phase distribution in ferroelectric data storage structures increase, resulting in larger device-to-device variations between different ferroelectric memory devices. For example, below a cell size of approximately 135 nm, a memory window of the associated devices is narrowed by a relatively large device-to-device variation of FeRAM devices, thereby reducing the ability of a sensing circuit (e.g., a sense amplifier) ​​to distinguish between a low data state (e.g., a logic '0') and a high data state (e.g., a logic '1') during a read operation.

[0011] The present disclosure, in some embodiments, relates to an integrated chip having a ferroelectric data storage structure disposed between a bottom electrode and a top electrode. The ferroelectric data storage structure includes an amorphous initiation layer and a ferroelectric switching layer. The amorphous initiation layer is configured to influence a crystalline phase of the ferroelectric switching layer. By influencing the crystalline phase of the ferroelectric switching layer, the amorphous initiation layer can cause the ferroelectric switching layer to be fabricated to have a substantially uniform orthorhombic phase, thereby reducing device-to-device variations across a memory array and improving reliability of read operations on a memory array.

[0012] Fig. 1 shows a cross-sectional view of some embodiments of an integrated chip 100 with a ferroelectric data storage structure having an amorphous initiation layer.

[0013] The integrated chip 100 includes a ferroelectric memory device 104 (e.g., a FeRAM device) disposed in a dielectric structure 106 over a substrate 102. The ferroelectric memory device 104 has a bottom electrode 108 disposed over the substrate 102. A ferroelectric data storage structure 109 is disposed between the bottom electrode 108 and a top electrode 114. The ferroelectric data storage structure 109 is configured to change polarization based on one or more voltages applied to the bottom electrode 108 and / or the top electrode 114. An upper interconnect 116 extends through the dielectric structure 106 to contact the top electrode 114.

[0014] The ferroelectric data storage structure 109 includes an amorphous initiation layer 110 and a ferroelectric switching layer 112. In some embodiments, the amorphous initiation layer 110 may directly contact the ferroelectric switching layer 112. In some embodiments, the amorphous initiation layer 110 may be disposed between the ferroelectric switching layer 112 and the bottom electrode 108. In other embodiments (not shown), the amorphous initiation layer 110 may be separated from the bottom electrode 108 by the ferroelectric switching layer 112. In some embodiments, the amorphous initiation layer 110 may comprise an amorphous phase.

[0015] The amorphous initiation layer 110 is configured to influence a crystalline phase (i.e., a crystal structure) of the ferroelectric switching layer 112 during the fabrication of the ferroelectric memory device 104. In some embodiments, for example, the amorphous initiation layer 110 may be configured to act as a nucleation center through which a crystalline phase of the ferroelectric switching layer 112 is influenced during the fabrication of the ferroelectric memory device 104 (e.g., during the epitaxial growth of the ferroelectric switching layer 112).In some embodiments, the amorphous initiation layer 110 is configured to prevent interaction between the ferroelectric switching layer 112 and the bottom electrode 108, thereby preventing the bottom electrode 108 from influencing a crystalline structure of the ferroelectric switching layer 112 and enabling the ferroelectric switching layer 112 to be formed to have an amorphous phase (i.e., amorphous structure). In some of these embodiments, a later annealing process is configured to convert the amorphous phase of the ferroelectric switching layer 112 into an orthorhombic crystalline structure, thereby giving the ferroelectric switching layer 112 a substantially uniform orthorhombic phase (e.g., the ferroelectric switching layer acquires a predominantly orthorhombic phase).

[0016] By influencing the crystalline phase of the ferroelectric switching layer 112, the amorphous initiation layer 110 can cause the ferroelectric switching layer 112 to have a substantially uniform crystalline phase. In some embodiments, the substantially uniform orthorhombic crystalline phase extends between outermost surfaces (e.g., outermost sidewalls and / or top and bottom surfaces) of the ferroelectric switching layer 112. The substantially uniform crystalline phase can reduce device-to-device variations in the crystalline phase that can occur across a memory array. Reducing device-to-device variations mitigates the shrinkage of memory windows with decreasing memory device size, thereby improving performance (e.g., a read window) of the integrated chip 100.

[0017] Fig. 2 shows a cross-sectional view of some further embodiments of an integrated chip 200 with a ferroelectric data storage structure having an amorphous initiation layer.

[0018] The integrated chip 200 includes a ferroelectric memory device 104 disposed in a dielectric structure 106 comprising a plurality of stacked inter-level dielectric (ILD) layers over a substrate 102. In some embodiments, the plurality of stacked ILD layers may include one or more lower ILD layers 106L disposed between the ferroelectric memory device 104 and the substrate 102, and an upper ILD layer 106U enclosing the ferroelectric memory device 104. In some embodiments, the one or more lower ILD layers 106L enclose one or more lower interconnects 204a-204c. In some embodiments, a top interconnect 116 extends through the top ILD layer 106U to contact the ferroelectric memory device 104.

[0019] In some embodiments, the one or more lower interconnects 204a-204c may couple the ferroelectric memory device 104 to an access device 202. In various embodiments, the access device 202 may include a unipolar selector (e.g., a diode), a bipolar selector (e.g., a transistor device disposed in the substrate 102), or the like. In some embodiments, the access device 202 may include a planar FET, a FinFET, a gate-all-around structure (GAA) transistor, a nanolayer transistor, or the like.In some of these embodiments, the one or more lower interconnects 204a-204c may couple the ferroelectric memory device 104 to a source line SL, the access device 202 may couple the ferroelectric memory device 104 to a word line WL, and the upper interconnect 116 may couple the ferroelectric memory device 104 to a bit line BL.

[0020] In some embodiments, the one or more lower interconnects 204a-204c and / or the upper interconnect 116 may include a conductive contact 204a, an interconnect wire 204b, and / or an interconnect via 204c. In some embodiments, the one or more lower interconnects 204a-204c and the upper interconnect 116 may include tungsten, aluminum, copper, ruthenium, and / or the like. In some embodiments, the plurality of stacked ILD layers may include a nitride (e.g., silicon nitride, silicon oxynitride), a carbide (e.g., silicon carbide), an oxide (e.g., silicon oxide), borosilicate glass (BSG), phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), a low-k oxide (e.g., a carbon-doped oxide, SiCOH), or the like.

[0021] The ferroelectric memory device 104 includes a ferroelectric data storage structure 109 disposed between a bottom electrode 108 and a top electrode 114. In some embodiments, the bottom electrode 108 may comprise a first metal, and the top electrode 114 may comprise a second metal. In some embodiments, the first metal and / or the second metal may comprise tungsten, tantalum, titanium, tantalum nitride, titanium nitride, ruthenium, platinum, iridium, molybdenum, or the like. In some embodiments, the bottom electrode 108 and the top electrode 114 may each have thicknesses between about 10 nanometers (nm) and about 100 nm, between about 5 nm and about 50 nm, or other similar values.

[0022] The ferroelectric data storage structure 109 includes an amorphous initiation layer 110 and a ferroelectric switching layer 112. In some embodiments, the amorphous initiation layer 110 separates the ferroelectric switching layer 112 from the bottom electrode 108. In some embodiments, the amorphous initiation layer 110 may comprise silicon oxide (e.g., SiO x ), silicon nitride (e.g. Si x N y ), tantalum oxide (e.g. TaO x ), tantalum nitride (e.g. TaN), aluminum oxide (e.g. AlO x ), aluminum nitride (e.g. AlN), yttrium oxide (e.g. YO x ), gadolinium oxide (e.g. GdO x ), lanthanum oxide (e.g. LaO x ), strontium oxides (e.g. SrO x) or the like. In some embodiments, the ferroelectric switching layer 112 may comprise a high-k dielectric material. In some embodiments, the ferroelectric switching layer 112 may comprise, for example, hafnium oxide, hafnium-zirconium oxide, zirconium oxide, or the like.

[0023] In some embodiments, the amorphous initiation layer 110 may have a thickness 208 that is between about 1 nm (10 angstroms (Å)) and about 3 nm (30 Å). In other embodiments, the thickness 208 may be between about 2 nm (20 Å) and about 3 nm (30 Å), between about 2.5 nm (25 Å) and about 3 nm (30 Å), or other similar values. If the thickness 208 of the amorphous initiation layer 110 is greater than about 3 nm (30 Å), an operating voltage of the ferroelectric switching layer 112 will increase. In some embodiments, the ferroelectric switching layer 112 may have a thickness 210 in a range between about 5 nm (50 Å) and about 30 nm (300 Å), between 10 nm (100 Å) and about 40 nm (400 Å), or other similar values.

[0024] In some embodiments, the amorphous initiation layer 110 may comprise and / or be a material that has a relatively high crystallization temperature. The relatively high crystallization temperature allows the amorphous initiation layer 110 to remain amorphous during high-temperature processes. By causing the amorphous initiation layer 110 to remain amorphous during high-temperature processes, the amorphous initiation layer 110 may remain amorphous and influence a phase of the overlying ferroelectric switching layer 112 to be amorphous. In some embodiments, the amorphous initiation layer 110 may have a higher crystallization temperature than the ferroelectric switching layer 112, such that the amorphous initiation layer 110 remains amorphous even while the ferroelectric switching layer 112 is being converted to a crystalline phase (e.g., an orthorhombic crystalline phase).In some embodiments, the amorphous initiation layer 110 may include and / or be a material having a crystallization temperature greater than about 400 degrees Celsius (°C), greater than about 500°C, greater than about 750°C, or other similar values.

[0025] In some embodiments, the bottom electrode 108 may be separated from the one or more bottom interconnects 204a-204b and / or the one or more ILD layers 106L by a diffusion barrier 206. In some embodiments, the diffusion barrier 206 may contact a bottom surface of the bottom electrode 108. In some embodiments, the diffusion barrier 206 may comprise tantalum nitride, titanium nitride, or the like.

[0026] Fig. 3A shows a cross-sectional view of some further embodiments of an integrated chip 300 with a ferroelectric data storage structure having an amorphous initiation layer.

[0027] The integrated chip 300 includes a memory region 302 and a logic region 304. The memory region 302 includes a ferroelectric memory device 104 disposed in a dielectric structure 106 over a substrate 102. In some embodiments, the ferroelectric memory device 104 may be arranged in an array including a plurality of ferroelectric memory devices. The ferroelectric memory device 104 is coupled to an access device 202 through one or more lower interconnects 204 in one or more lower ILD layers 106L. In some embodiments, the access device 202 includes a gate electrode 202a over the substrate 102 and between source / drain regions 202b disposed in the substrate 102. In some embodiments, the gate electrode 202a may be separated from the substrate 102 by a gate dielectric 202c.In some embodiments, one or more isolation structures 303 may be disposed in the substrate 102 along opposite sides of the access device 202. The one or more isolation structures 303 are configured to electrically isolate the access device 202 from a neighboring device. In some embodiments, the one or more isolation structures 303 may comprise shallow trench isolation (STI) structures comprising one or more dielectric materials disposed in one or more trenches defined by sidewalls of the substrate 102.

[0028] In some embodiments, a lower isolation structure 310 is disposed over the one or more lower ILD layers 106L. The lower isolation structure 310 has sidewalls defining an opening disposed over the one or more lower interconnects 204. A lower electrode via 306 extends through the opening defined by the sidewalls of the lower isolation structure 310. The lower electrode via 306 couples the ferroelectric memory device 104 to the one or more lower interconnects 204.

[0029] The ferroelectric memory device 104 includes a ferroelectric data storage structure 109 disposed between a bottom electrode 108 and a top electrode 114. The ferroelectric data storage structure 109 includes an amorphous initiation layer 110 and a ferroelectric switching layer 112. In some embodiments, the bottom electrode 108, the amorphous initiation layer 110, the ferroelectric switching layer 112, and the top electrode 114 may comprise substantially planar layers. In these embodiments, the bottom electrode 108, the amorphous initiation layer 110, the ferroelectric switching layer 112, and the top electrode 114 may each include a substantially planar bottom surface and a substantially planar top surface extending transversely between outermost sidewalls.

[0030] In some embodiments, a diffusion barrier 206 may be disposed between the bottom electrode 108 and the bottom isolation structure 310. In some embodiments, the diffusion barrier 206 may extend transversely past the outermost sidewalls of the bottom electrode via 306 to directly above a top surface of the bottom isolation structure 310. In some embodiments, the diffusion barrier 206 may also comprise a substantially planar layer. In some alternative embodiments (not shown), the diffusion barrier 206 may occupy outer sidewalls and a bottom surface of the bottom electrode via 306.

[0031] The logic region 304 includes a logic device 307 arranged on and / or in the substrate 102. In some embodiments, the logic device 307 may comprise a transistor device (e.g., a planar FET, a FinFET, a gate-all-around structure (GAA) transistor, a nanolayer transistor, or the like). In some embodiments, the one or more isolation structures 303 may also be arranged in the substrate 102 along opposite sides of the logic device 307. The logic device 307 is coupled to one or more additional lower interconnects 308 arranged in the one or more lower ILD layers 106L. The one or more additional lower interconnects 308 are further coupled to an interconnect via 312 arranged in the upper ILD layer 106U and extending through the lower isolation structure 310.

[0032] Fig. 3B shows a cross-sectional view of some alternative embodiments of an integrated chip 314 with a ferroelectric data storage structure having an amorphous initiation layer.

[0033] The integrated chip 314 includes a bottom isolation structure 310 disposed over one or more ILD layers 106L enclosing one or more bottom interconnects 204. A ferroelectric memory device 104 is disposed over the bottom isolation structure 310. The bottom isolation structure 310 includes one or more sidewalls 310s defining an opening exposing the one or more bottom interconnects 204. In some embodiments, the one or more sidewalls 310s may be angled. In some of these embodiments, the one or more sidewalls 310s may be separated from a bottom surface of the bottom isolation structure 310 by an acute angle, measured through the bottom isolation structure 310.

[0034] The ferroelectric memory device 104 includes a ferroelectric data storage structure 109 disposed between a bottom electrode 108 and a top electrode 114. The ferroelectric data storage structure 109 includes an amorphous initiation layer 110 and a ferroelectric switching layer 112. In some embodiments, the bottom electrode 108, the amorphous initiation layer 110, the ferroelectric switching layer 112, and the top electrode 114 are conformal layers (e.g., each having a substantially V-shaped structure). In some of these embodiments, the bottom electrode 108 occupies the one or more sidewalls 310s of the bottom isolation structure 310 that define the opening and has angled inner sidewalls that define a first recess in a top surface of the bottom electrode 108.The amorphous initiation layer 110 occupies the angled inner sidewalls of the bottom electrode 108 and has angled inner sidewalls that define a second recess in a top surface of the amorphous initiation layer 110. The ferroelectric switching layer 112 occupies the angled inner sidewalls of the amorphous initiation layer 110 and has angled inner sidewalls that define a third recess in a top surface of the ferroelectric switching layer 112. The top electrode 114 occupies the angled inner sidewalls of the ferroelectric switching layer 112. In some embodiments, the top electrode 114 may completely fill the third recess.

[0035] Because the bottom electrode 108, the amorphous initiation layer 110, the ferroelectric switching layer 112, and the top electrode 114 are conformal layers, they have a surface that extends in both a transverse and a vertical direction. By extending the layers in both a transverse and vertical direction, they have a larger effective width (i.e., distance between outer sidewalls of a layer measured along top surfaces of the layer). Due to the larger effective width, a size of the ferroelectric switching layer 112 increases without an increase in the area required to assemble the ferroelectric memory device 104. By increasing the size of the ferroelectric switching layer 112, the likelihood of a more uniform crystalline phase (e.g.,orthorhombic phase) in the ferroelectric switching layer 112, thereby improving performance of the ferroelectric memory device 104.

[0036] Fig. 4A shows a cross-sectional view of some further embodiments of an integrated chip 400 with a ferroelectric data storage structure having an amorphous initiation layer.

[0037] The integrated chip 400 includes a ferroelectric memory device 104 disposed in a dielectric structure 106 over a substrate 102. In some embodiments, the dielectric structure 106 includes a plurality of stacked inter-level dielectric (ILD) layers 106a-106e. The plurality of stacked ILD layers 106a-106e includes one or more lower ILD layers 106a-106d and an upper ILD layer 106e. The one or more lower ILD layers 106a-106d laterally enclose one or more lower interconnects 204 configured to couple the ferroelectric memory device 104 to an access device 202.

[0038] In some embodiments, a lower isolation structure 310 is disposed over the one or more lower ILD layers 106a-106d. The lower isolation structure 310 has sidewalls that form an opening extending through the lower isolation structure 310. In various embodiments, the lower isolation structure 310 may comprise silicon nitride, silicon dioxide, and / or silicon carbide, or the like. In some embodiments, an upper isolation structure 406 is disposed over the ferroelectric memory device 104 and on the lower isolation structure 310. The upper isolation structure 406 extends continuously from a first position directly above the ferroelectric memory device 104 to a second position adjacent to a top surface of the lower isolation structure 310. The upper isolation structure 406 separates the ferroelectric memory device 104 from the upper ILD layer 106e.In some embodiments, the upper isolation structure 406 may comprise silicon nitride, silicon dioxide, silicon carbide, and / or tetraethyl orthosilicate (TEOS), or the like.

[0039] A bottom electrode via 306 extends through the bottom isolation structure 310. In some embodiments, the bottom electrode via 306 may include a diffusion barrier layer 306a and a bottom electrode via layer 306b over the diffusion barrier layer 306a. The ferroelectric memory device 104 is disposed over the bottom electrode via 306 and the bottom isolation structure 310. In some embodiments, the ferroelectric memory device 104 includes a bottom electrode 108 separated from a top electrode 114 by a ferroelectric data storage structure 109. In some embodiments, the ferroelectric data storage structure 109 may include an amorphous initiation layer 110 and a ferroelectric switching layer 112.

[0040] In some embodiments, a hard mask 402 may be disposed on the top electrode 114. In some embodiments, one or more sidewall spacers 404 may be disposed on opposite sides of the top electrode 114 and the hard mask 402. The hard mask 402 may comprise a metal (e.g., titanium, tantalum, or the like) and / or a dielectric (e.g., a nitride, a carbide, or the like). The one or more sidewall spacers 404 may comprise an oxide (e.g., silicon-rich oxide), a nitride (e.g., silicon nitride), a carbide (e.g., silicon carbide), or the like. In some embodiments, the top interconnect 116 extends through the top ILD layer 106e and the hard mask 402 to electrically contact the top electrode 114.

[0041] Fig. 4B shows a cross-sectional view of some alternative embodiments of an integrated chip 408 with a ferroelectric data storage structure having an amorphous initiation layer

[0042] The integrated chip 408 includes a ferroelectric memory device 104 disposed within a dielectric structure 106 located above a substrate 102. The ferroelectric memory device 104 includes a ferroelectric data storage structure 109 disposed between a bottom electrode 108 and a top electrode 114. The ferroelectric data storage structure 109 includes an amorphous initiation layer 110 and a ferroelectric switching layer 112. The bottom electrode 108, the amorphous initiation layer 110, the ferroelectric switching layer 112, and the top electrode 114 are conformal layers (e.g., each having a substantially V-shaped structure).

[0043] It is understood that in various embodiments, the disclosed ferroelectric data storage structure may be arranged in various types of devices (e.g., FRAM (ferroelectric random-access memory), FTJ (ferroelectric tunnel junction) devices, MTJ (magnetic tunnel junction) devices, DRAM (dynamic random access memory), FeFET (ferroelectric field effect transistor) devices, or the like). For example, Fig. 4C is a cross-sectional view of further embodiments of an integrated chip 410 having a disclosed ferroelectric data storage structure disposed within a FeFET device 412.

[0044] The FeFET device 412 has a gate structure 414 disposed between source / drain regions 416 in a substrate 102. The gate structure 414 includes a gate dielectric 418 disposed on the substrate 102 and a conductive material 420 disposed on the gate dielectric 418. An amorphous initiation layer 110 is disposed on the conductive material 420, and a ferroelectric switching layer 112 is disposed on the amorphous initiation layer 110. A gate electrode 422 is disposed on the ferroelectric switching layer 112. One or more top interconnects 424 are disposed in a dielectric structure 106 above the substrate 102. The one or more top interconnects 424 contact the gate electrode 422.

[0045] In some embodiments, the gate dielectric 418 may comprise an oxide such as silicon oxide, silicon oxynitride, or the like. In some embodiments, the conductive material 420 and / or the gate electrode 422 may comprise titanium nitride, tantalum nitride, tungsten, ruthenium, or the like. In some embodiments, the ferroelectric switching layer 112 may comprise hafnium oxide, hafnium zirconium oxide, zirconium oxide, lead zirconate titanate (PZT), or the like. In some embodiments, the conductive material 420 may comprise titanium nitride, tantalum nitride, tungsten, ruthenium, or the like.

[0046] In some alternative embodiments, the disclosed ferroelectric data storage structure may be used in a memory device, which may be a FRAM device. In these embodiments, the top electrode and the bottom electrode may each comprise titanium nitride, tantalum nitride, tungsten and / or ruthenium, or the like. In some of these embodiments, the ferroelectric switching layer may comprise hafnium oxide, hafnium-zirconium oxide, zirconium oxide, PZT, or the like.

[0047] In other alternative embodiments, the disclosed ferroelectric data storage structure may be used in a memory device, which may be an FTJ device. In these embodiments, the top electrode and the bottom electrode may each comprise titanium nitride, tantalum nitride, tungsten, ruthenium, platinum, and / or niobium-doped strontium titanate (Nb:STO), or the like. In some of these embodiments, the ferroelectric switching layer may comprise hafnium oxide, hafnium zirconia, zirconium oxide, PZT, barium titanate, or the like.

[0048] In yet other alternative embodiments, the disclosed ferroelectric data storage structure may be used in a memory device, which may be an MTJ device. In these embodiments, the top electrode and the bottom electrode may each comprise titanium nitride, tantalum nitride, tungsten and / or ruthenium, or the like. In some of these embodiments, the ferroelectric switching layer may comprise hafnium oxide, hafnium-zirconium oxide, zirconium oxide, or the like.

[0049] In yet other alternative embodiments, the disclosed ferroelectric data storage structure may be used in a memory device, which may be a DRAM device. In these embodiments, the top electrode and the bottom electrode may each comprise titanium nitride, tantalum nitride, tungsten and / or ruthenium, or the like. In some of these embodiments, the ferroelectric switching layer may comprise hafnium oxide, hafnium-zirconium oxide, aluminum-hafnium-zirconium oxide, niobium oxide, or the like.

[0050] Fig. 5 shows some further embodiments of an integrated chip 500 with a ferroelectric memory device having a ferroelectric data storage structure comprising a plurality of amorphous initiation layers.

[0051] The integrated chip 500 includes a ferroelectric memory device 104 disposed in a dielectric structure 106 over a substrate 102. The ferroelectric memory device 104 has a ferroelectric data storage structure 109 disposed between a bottom electrode 108 and a top electrode 114. The ferroelectric data storage structure 109 includes an amorphous initiation layer 110 disposed on the bottom electrode 108, a ferroelectric switching layer 112 disposed on the amorphous initiation layer 110, and a second amorphous initiation layer 502 disposed on the ferroelectric switching layer 112. In some embodiments, the amorphous initiation layer 110 contacts the bottom electrode 108, and the second amorphous initiation layer 502 contacts the top electrode 114.In some embodiments, the ferroelectric switching layer 112 may extend continuously from a bottom surface contacting the amorphous initiation layer 110 to a top surface contacting the second amorphous initiation layer 502.

[0052] In some embodiments, the amorphous initiation layer 110 and the second amorphous initiation layer 502 may comprise and / or be the same material. In some embodiments, the amorphous initiation layer 110 and the second amorphous initiation layer 502 may comprise, for example, aluminum oxide. In other embodiments, the amorphous initiation layer 110 may comprise a first material, and the second amorphous initiation layer 502 may comprise a second material that is different from the first material. In some embodiments, the amorphous initiation layer 110 may comprise, for example, tantalum nitride, and the second amorphous initiation layer 502 may comprise aluminum oxide.

[0053] Fig. 6 shows some further embodiments of an integrated chip 600 with a ferroelectric memory device having a ferroelectric data storage structure comprising a plurality of amorphous initiation layers.

[0054] The integrated chip 600 includes a ferroelectric memory device 104 disposed in a dielectric structure 106 over a substrate 102. The ferroelectric memory device 104 has a ferroelectric data storage structure 109 disposed between a bottom electrode 108 and a top electrode 114. The ferroelectric data storage structure 109 includes an amorphous initiation layer 110 disposed on the bottom electrode 108, a ferroelectric switching layer 112 disposed on the amorphous initiation layer 110, a second amorphous initiation layer 502 disposed on the ferroelectric switching layer 112, and a second ferroelectric switching layer 602 disposed on the second amorphous initiation layer 502.In some embodiments, the amorphous initiation layer 110 contacts the bottom electrode 108, and the second ferroelectric switching layer 602 contacts the top electrode 114. In some embodiments, the ferroelectric switching layer 112 may extend continuously from a bottom surface contacting the amorphous initiation layer 110 to a top surface contacting the second amorphous initiation layer 502, and the second ferroelectric switching layer 602 may extend continuously from a bottom surface contacting the second amorphous initiation layer 502 to a top surface contacting the top electrode 114.

[0055] In some embodiments, the ferroelectric switching layer 112 and the second ferroelectric switching layer 602 may comprise and / or be the same material. In some embodiments, the ferroelectric switching layer 112 and the second ferroelectric switching layer 602 may comprise, for example, hafnium zirconium oxide. In other embodiments, the ferroelectric switching layer 112 may comprise a first material, and the second ferroelectric switching layer 602 may comprise a second material that is different from the first material. In some embodiments, the ferroelectric switching layer 112 and the second ferroelectric switching layer 602 may both have substantially orthorhombic crystalline phases.

[0056] Fig. 7 shows some further embodiments of an integrated chip 700 with a ferroelectric memory device having a ferroelectric data storage structure comprising a plurality of amorphous initiation layers.

[0057] The integrated chip 700 includes a ferroelectric memory device 104 disposed in a dielectric structure 106 over a substrate 102. The ferroelectric memory device 104 has a ferroelectric data storage structure 109 disposed between a bottom electrode 108 and a top electrode 114. The ferroelectric data storage structure 109 includes an amorphous initiation layer 110 disposed on the bottom electrode 108, a ferroelectric switching layer 112 disposed on the amorphous initiation layer 110, a second amorphous initiation layer 502 disposed on the ferroelectric switching layer 112, a second ferroelectric switching layer 602 disposed on the second amorphous initiation layer 502, and a third amorphous initiation layer 702 disposed on the second ferroelectric switching layer 602.In some embodiments, the amorphous initiation layer 110 contacts the bottom electrode 108, and the third amorphous initiation layer 702 contacts the top electrode 114. In some embodiments, the ferroelectric switching layer 112 may extend continuously from a bottom surface contacting the amorphous initiation layer 110 to a top surface contacting the second amorphous initiation layer 502, and the second ferroelectric switching layer 602 may extend continuously from a bottom surface contacting the second amorphous initiation layer 502 to a top surface contacting the third amorphous initiation layer 702.

[0058] In some embodiments, the amorphous initiation layer 110, the second amorphous initiation layer 502, and the third amorphous initiation layer 702 may comprise and / or be the same material. In some embodiments, the amorphous initiation layer 110, the second amorphous initiation layer 502, and the third amorphous initiation layer 702 may comprise, for example, aluminum oxide. In other embodiments, the amorphous initiation layer 110, the second amorphous initiation layer 502, and / or the third amorphous initiation layer 702 may comprise and / or be different materials. In some embodiments, the amorphous initiation layer 110 may comprise, for example, tantalum nitride, while the second amorphous initiation layer 502 and the third amorphous initiation layer 702 may comprise aluminum oxide.

[0059] Fig. 8 shows some further embodiments of an integrated chip 800 with a ferroelectric memory device having a ferroelectric data storage structure comprising a plurality of ferroelectric switching layers separated by an amorphous initiation layer.

[0060] The integrated chip 800 includes a ferroelectric memory device 104 disposed in a dielectric structure 106 over a substrate 102. The ferroelectric memory device 104 has a ferroelectric data storage structure 109 disposed between a bottom electrode 108 and a top electrode 114. The ferroelectric data storage structure 109 includes a ferroelectric switching layer 112 disposed on the bottom electrode 108, an amorphous initiation layer 110 disposed on the ferroelectric switching layer 112, and a second ferroelectric switching layer 602 disposed on the amorphous initiation layer 110. In some embodiments, the ferroelectric switching layer 112 contacts the bottom electrode 108, and the second ferroelectric switching layer 602 contacts the top electrode 114.In some embodiments, the amorphous initiation layer 110 may extend continuously from a bottom surface contacting the ferroelectric switching layer 112 to a top surface contacting the second ferroelectric switching layer 602.

[0061] In some embodiments, the ferroelectric switching layer 112 and the second ferroelectric switching layer 602 may comprise and / or be the same material. In some embodiments, the ferroelectric switching layer 112 and the second ferroelectric switching layer 602 may comprise, for example, hafnium zirconium oxide. In other embodiments, the ferroelectric switching layer 112 and the second ferroelectric switching layer 602 may comprise and / or be different materials. In some embodiments, the second ferroelectric switching layer 602 may have a substantially orthorhombic crystalline phase. In some embodiments, the ferroelectric switching layer 112 may have a plurality of different phases.

[0062] Fig. 9 shows a diagram 900 illustrating some embodiments of ferroelectric responses for ferroelectric memory devices having various sizes and that do not have an amorphous initiation layer.

[0063] Diagram 900 shows a capacitance on a ferroelectric material (y-axis) as a function of a voltage applied across the ferroelectric material (x-axis). As shown in diagram 900, the charges stored on the ferroelectric material change with a change in the applied voltage. A ferroelectric response corresponds to a difference between a maximum charge and a minimum charge on the ferroelectric material. The difference in charges stored by the ferroelectric material, in turn, corresponds to different data states stored by the ferroelectric material. For example, if the ferroelectric material stores charges with a first value, then the ferroelectric material stores a first data state (e.g.,a logical '0'), and if the ferroelectric material stores charges with a second value, then the ferroelectric material stores a second data state (e.g., a logical '1').

[0064] As shown by graph 900, the magnitude of a ferroelectric response is different for different sized ferroelectric memory devices. For example, line 902 shows a ferroelectric response of a ferroelectric memory device associated with a cell size having a large width (e.g., between about 500 nm and about 550 nm), line 906 shows a ferroelectric response of a ferroelectric memory device associated with a cell size having an intermediate width (e.g., between about 250 nm and about 300 nm) that is smaller than the large width, and line 910 shows a ferroelectric response of a ferroelectric memory device associated with a cell size having a small width (e.g., between about 100 nm and about 150 nm) that is smaller than the intermediate width.

[0065] As shown by line 902, the ferroelectric response for a ferroelectric memory device associated with a cell size having the large width has a first value 904 corresponding to a first memory window (e.g., a difference between an H data state and an L data state). The relatively large first value 904 makes it relatively easy to distinguish an H data state from an L data state. However, as shown by line 906, the ferroelectric response for a ferroelectric memory device associated with a cell size having the medium width has a second value 908 that is smaller than the first value 904. The second value 908 makes it harder to distinguish an H data state from an L data state.As further shown by line 910, the ferroelectric response for a ferroelectric memory device associated with a cell size having the small width has a third value 912 that is smaller than the second value 908. The third value 912 makes it even harder to distinguish an H data state from an L data state.

[0066] Fig. 10 shows a bar chart 1000 illustrating some embodiments of ferroelectric response ratios of ferroelectric memory devices having different sizes.

[0067] Bars 1002a-1002b show ratios of ferroelectric responses between different sized ferroelectric memory devices that do not have an amorphous initiation layer (AIL). Bar 1002a shows a ratio of a ferroelectric response of a ferroelectric memory device associated with a small cell size (e.g., associated with line 910 of Fig. 9) and a ferroelectric storage device in conjunction with a large cell size (e.g. in conjunction with line 902 of Fig. 9). Bar 1002b shows a relationship of a ferroelectric response of a ferroelectric memory device in association with an average cell size (e.g., in association with line 906 of Fig. 9) and a ferroelectric storage device in conjunction with a large cell size (e.g. in conjunction with line 902 of Fig. 9). As can be seen by bars 1002a-1002b, the different widths of the ferroelectric memory devices cause a large difference in the ferroelectric response of a ferroelectric memory device. For example, the ferroelectric response of a ferroelectric memory device associated with a small cell size is approximately 20% of the ferroelectric response of a ferroelectric memory device associated with a large cell size, while the ferroelectric response of a ferroelectric memory device associated with a medium cell size is approximately 40% of the ferroelectric response of the ferroelectric memory device associated with a large cell size.

[0068] Bars 1004a-1004b show ratios of ferroelectric responses between different sized ferroelectric memory devices with an amorphous initiation layer separated from a bottom electrode and a top electrode by a ferroelectric switching layer (e.g., as in Fig. 8). Bar 1004a shows a ratio of a ferroelectric response of a ferroelectric memory device associated with a small cell size and a ferroelectric memory device associated with a large cell size. Bar 1004b shows a ratio of a ferroelectric response of a ferroelectric memory device associated with a medium cell size and a ferroelectric memory device associated with a large cell size.As can be seen by bars 1004a-1004b, in some embodiments, the ferroelectric response of a ferroelectric memory device associated with a small cell size is approximately 40% of the ferroelectric response of a ferroelectric memory device associated with a large cell size, while the ferroelectric response of a ferroelectric memory device associated with a medium cell size is approximately 90% of the ferroelectric response of the ferroelectric memory device associated with a large cell size. Accordingly, the amorphous initiation layer reduces memory window degradation as the size of a ferroelectric memory device decreases.

[0069] Bars 1006a-1006b show ratios of ferroelectric responses between different sized ferroelectric memory devices having an amorphous initiation layer in contact with a bottom electrode and separated from a top electrode by a ferroelectric switching layer (e.g., as in Fig. 1). Bar 1006a shows a ratio of a ferroelectric response of a ferroelectric memory device associated with a small cell size and a ferroelectric memory device associated with a large cell size. Bar 1006b shows a ratio of a ferroelectric response of a ferroelectric memory device associated with a medium cell size and a ferroelectric memory device associated with a large cell size.As can be seen by bars 1006a-1006b, in some embodiments, the ferroelectric response of a ferroelectric memory device associated with a small cell size is about 100% of a ferroelectric response of a ferroelectric memory device associated with a large cell size, while the ferroelectric response of a ferroelectric memory device associated with a medium cell size is about 100% of the ferroelectric response of the ferroelectric memory device associated with a large cell size.

[0070] Bars 1008a-1008b show ratios of ferroelectric responses between different sized ferroelectric memory devices having a ferroelectric switching layer separated from a bottom electrode by an amorphous initiation layer and further separated from a top electrode by a second amorphous initiation layer (e.g., as in Fig. 5). Bar 1008a shows a ratio of a ferroelectric response of a ferroelectric memory device associated with a small cell size and a ferroelectric memory device associated with a large cell size. Bar 1008b shows a ratio of a ferroelectric response of a ferroelectric memory device associated with a medium cell size and a ferroelectric memory device associated with a large cell size.As can be seen from bars 1008a-1008b, in some embodiments, the ferroelectric response of a ferroelectric memory device associated with a small cell size is about 100% of a ferroelectric response of a ferroelectric memory device associated with a large cell size, while the ferroelectric response of a ferroelectric memory device associated with a medium cell size is about 100% of the ferroelectric response of a ferroelectric memory device associated with a large cell size.

[0071] Bars 1010a-1010b show ratios of ferroelectric responses between different sized ferroelectric memory devices having an amorphous initiation layer on a bottom electrode, a ferroelectric switching layer on the amorphous initiation layer, a second amorphous initiation layer on the ferroelectric switching layer, and a second ferroelectric switching layer on the second amorphous initiation layer (e.g., as in Fig. 6). Bar 1010a shows a ratio of a ferroelectric response of a ferroelectric memory device associated with a small cell size and a ferroelectric memory device associated with a large cell size. Bar 1010b shows a ratio of a ferroelectric response of a ferroelectric memory device associated with a medium cell size and a ferroelectric memory device associated with a large cell size.As can be seen from bars 1010a-1010b, in some embodiments, the ferroelectric response of a ferroelectric memory device associated with a small cell size is about 100% of a ferroelectric response of a ferroelectric memory device associated with a large cell size, while the ferroelectric response of a ferroelectric memory device associated with a medium cell size is about 90% of the ferroelectric response of the ferroelectric memory device associated with a large cell size.

[0072] Bars 1012a-1012b show ratios of ferroelectric responses between different sized ferroelectric memory devices having an amorphous initiation layer on a bottom electrode, a ferroelectric switching layer on the amorphous initiation layer, a second amorphous initiation layer on the ferroelectric switching layer, a second ferroelectric switching layer on the second amorphous initiation layer, and a third amorphous initiation layer on the second ferroelectric switching layer (e.g., as in Fig. 7). Bar 1012a shows a ratio of a ferroelectric response of a ferroelectric memory device associated with a small cell size and a ferroelectric memory device associated with a large cell size. Bar 1012b shows a ratio of a ferroelectric response of a ferroelectric memory device associated with a medium cell size and a ferroelectric memory device associated with a large cell size.As can be seen from bars 1012a-1012b, in some embodiments, the ferroelectric response of a ferroelectric memory device associated with a small cell size is about 100% of a ferroelectric response of a ferroelectric memory device associated with a large cell size, while the ferroelectric response of a ferroelectric memory device associated with a medium cell size is about 90% of the ferroelectric response of the ferroelectric memory device associated with a large cell size.

[0073] Accordingly, as shown by bar chart 1000, the one or more amorphous initiation layers of the disclosed ferroelectric data storage structure reduce memory window degradation with decreasing size of a ferroelectric memory device, thereby enabling downsizing of the ferroelectric memory device while maintaining good performance.

[0074] It is understood that the disclosed amorphous initiation layer is also configured to decrease changes in a memory window of a ferroelectric data storage structure over time. For example, Fig. 11A is a diagram 1100 illustrating some embodiments of a memory window of a ferroelectric memory device (y-axis) across a plurality of read / write cycles (x-axis) for ferroelectric memory devices of various sizes. The memory windows shown by diagram 1100 are associated with ferroelectric memory devices that do not include the disclosed amorphous initiation layer.

[0075] As shown in diagram 1100, the memory window is illustrated for a ferroelectric memory device associated with a first cell size (line 1102), for a ferroelectric memory device associated with a second cell size (line 1104) smaller than the first cell size, and for a ferroelectric memory device associated with a third cell size (line 1106) smaller than the second cell size. The memory window of ferroelectric memory devices generally increases over time due to defect redistribution. However, as the size of the ferroelectric memory device decreases, a change in the memory window over a first region 1108 increases. As the first region becomes large, the reliability of the ferroelectric memory devices becomes more difficult to control.

[0076] Fig. 11B shows a diagram 1110 illustrating some embodiments of a memory window of a ferroelectric memory device (x-axis) over a plurality of read / write cycles (y-axis) for ferroelectric memory devices of various sizes. The memory windows shown by diagram 1110 are associated with ferroelectric memory devices having the disclosed amorphous initiation layer.

[0077] As shown in diagram 1110, the memory window is illustrated for a ferroelectric memory device associated with a first cell size (line 1112), for a ferroelectric memory device associated with a second cell size (line 1114) that is smaller than the first cell size, and for a ferroelectric memory device associated with a third cell size (line 1116) that is smaller than the second cell size. The memory window of ferroelectric memory devices generally increases over time due to defect redistribution. However, as the size of the ferroelectric memory device decreases, there is a change in the memory window around a second region 1118 that is smaller than the first region (1108 of Fig. 11A). The smaller change across the memory window of devices of different sizes improves the reliability of the memory devices.

[0078] Fig. 12 shows an exemplary schematic representation of a ferroelectric memory circuit 1200 with ferroelectric memory devices, each having an amorphous initiation layer.

[0079] The ferroelectric memory circuit 1200 comprises a ferroelectric memory matrix 1202 having a plurality of ferroelectric memory cells 1204 1,1 -1204 n,m . The majority of ferroelectric memory cells 1204 1,1 -1204 n,m are arranged in rows and / or columns in the ferroelectric memory matrix 1202. The plurality of ferroelectric memory cells 1204 1,x -1204 n,x in a row are operable to word lines WL x (x=1-m). The majority of ferroelectric devices 1204 x,1 -1204 x,m in a column are operable to bit lines BL x (x=1-n) and source lines SL x(x=1-n). In some embodiments, the plurality of ferroelectric memory cells 1204 1,1 -1204 n,m each have a cell size (e.g., width) of less than about 135 nm. At this cell size, the disclosed amorphous initiation layer is configured to substantially mitigate performance degradation effects resulting from memory cell downsizing.

[0080] The word lines WL1-WL m , the bit lines BL1-BL n and the source lines SL1-SL n are coupled to a control circuit 1206. In some embodiments, the control circuit 1206 includes a word line decoder 1210 connected to the word lines WL1-WL m a bit line decoder 1208 connected to the bit lines BL1-BL n and a source line decoder 1212 connected to the source lines SL1-SL nIn some embodiments, the control circuit 1206 further includes a sense amplifier 1214 coupled to the bit lines BL1-BL n or the source lines SL1-SL n In some embodiments, the control circuit 1206 further comprises a control unit 1216 configured to receive address information S ADR to the word line decoder 1210, the bit line decoder 1208 and / or the source line decoder 1212 to enable the control circuit 1206 to selectively access one or more of the plurality of ferroelectric memory cells 1204 1,1 -1204".

[0081] During operation, the control unit 1216 is configured, for example, to receive address information S ADR to the word line decoder 1210, the bit line decoder 1208 and the source line decoder 1212. Based on the address information S ADRthe word line decoder 1210 is configured to selectively apply a bias voltage to one of the word lines WL1-WL m At the same time, the bit line decoder 1208 is configured to selectively apply a bias voltage to one of the bit lines BL1-BL n and / or the source line decoder 1212 is configured to selectively apply a bias voltage to one of the source lines SL1-SL n By applying bias voltages to selected word lines WL1-WL m , the bit lines BL1-BL n and / or the source lines SL1-SL n the ferroelectric memory circuit 1200 can be operated to store different data states in the plurality of ferroelectric memory cells 1204 1,1 -1204 n,m to write and / or data states from the plurality of ferroelectric memory cells 1204 1,1 -1204".

[0082] The Fig. 13-22 show sectional views 1300-2200 of some embodiments of a method for manufacturing an integrated chip with a ferroelectric data storage structure having an amorphous initiation layer. While the method is described with reference to Fig. 13-22, but it is understood that the procedure does not apply to the Fig. 13-22, but is independent and independent of the structures disclosed in the Fig. 13-22 disclosed structures can be used.

[0083] As shown in section view 1300 of Fig. 13, a substrate 102 is provided. In various embodiments, the substrate 102 may be any type of semiconductor substrate (e.g., silicon, SiGe, SOI, etc.), such as a semiconductor wafer and / or one or more dies on a wafer, as well as any type of semiconductor and / or epitaxial layers in connection therewith. In some embodiments, the substrate 102 may include a memory region 302 and a logic region 304. In some embodiments, an access device 202 is fabricated on and / or in the substrate 102 in the memory region 302. In some embodiments, a logic device 307 is fabricated on and / or in the substrate 102 in the logic region 304. In some embodiments, the access device 202 and / or the logic device 307 may include a transistor.In some of these embodiments, the access device 202 and / or the logic device 307 may be formed by depositing a gate dielectric layer and a gate electrode layer over the substrate 102. The gate dielectric layer and the gate electrode layer are later patterned to form a gate dielectric (e.g., 202c) and a gate electrode (e.g., 202a). The substrate 102 may later be implanted to form source / drain regions (e.g., 202b) on opposite sides of the gate electrode (e.g., 202a). In some embodiments, one or more isolation structures 303 may be formed in the substrate 102 along opposite sides of the access device 202 and / or the logic device 307.

[0084] As shown in section view 1400 of Fig. 14, one or more lower ILD layers 106L are formed over the substrate 102. In some embodiments, one or more lower interconnects 204 are formed in the one or more lower ILD layers 106L in the memory region 302, and one or more additional lower interconnects 308 are formed in the one or more lower ILD layers 106L in the logic region 304. In some embodiments, the one or more lower interconnects 204 and / or the one or more additional lower interconnects 308 may include a conductive contact, an interconnect wire, and / or an interconnect via. In some embodiments, the one or more lower ILD layers 106L may include one or more stacked inter-level dielectric (ILD) layers.The one or more lower interconnects 204 and / or the one or more additional lower interconnects 308 may be formed by forming a lower ILD layer (e.g., an oxide, a low-k dielectric, or an ultra-low-k dielectric) over the substrate 102, selectively etching the lower ILD layer to form a via hole and / or a trench in the lower ILD layer, forming a conductive material (e.g., copper, aluminum, etc.) in the via hole and / or the trench, and performing a planarization process (e.g., a chemical mechanical planarization process) to remove excess conductive material over the lower ILD layer.

[0085] As shown in section view 1500 of Fig. 15, a lower isolation structure 310 is formed over the one or more lower interconnects 204 and / or the one or more lower ILD layers 106L. In some embodiments, the lower isolation structure 310 comprises silicon-rich oxide, silicon carbide, and / or silicon nitride, or the like. In some embodiments, the lower isolation structure 310 may be formed using one or more deposition processes (e.g., physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PE-CVD), or the like).

[0086] In some embodiments, the bottom isolation structure 310 may be selectively etched to form an opening 1502 extending through the bottom isolation structure 310 to expose a top surface of the one or more bottom interconnects 204. In some embodiments, the opening 1502 may later be filled with a conductive material to form a bottom electrode via 306 extending through the bottom isolation structure 310. In some embodiments, the bottom electrode via 306 may comprise a metal, a metal nitride, and / or the like. For example, the bottom electrode via 306 may comprise tungsten, tantalum nitride, titanium nitride, ruthenium, platinum, iridium, or the like. In some embodiments, the conductive material may be formed using a deposition process (e.g., a PVD process, a CVD process, a PE-CVD process, or the like).In some embodiments, a planarization process (e.g., a chemical mechanical planarization (CMP) process) may be performed to remove excess conductive material over the lower isolation structure 310.

[0087] As shown in section view 1600 of Fig. 16, a diffusion barrier layer 1602 is formed over the bottom isolation structure 310. In some embodiments, the diffusion barrier layer 1602 may comprise a metal nitride, such as titanium nitride, tantalum nitride, or the like. A bottom electrode layer 1604 is formed over the diffusion barrier layer 1602. In some embodiments, the bottom electrode layer 1604 may comprise tungsten, tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, platinum, iridium, or the like. In some embodiments, the diffusion barrier layer 1602 and the bottom electrode layer 1604 may be formed using deposition processes (e.g., a PVD process, a CVD process, a PE-CVD process, or the like). In other embodiments (not shown), the diffusion barrier layer 1602 may be formed in the opening in the lower isolation structure 310 before the conductive material in the opening (e.g., 1502 of Fig. 15) to form the lower electrode via 306.

[0088] An unstructured amorphous initiation layer 1606 is formed over the bottom electrode layer 1604. In various embodiments, the unstructured amorphous initiation layer 1606 may comprise zirconium oxide (e.g., ZrO x ), hafnium oxide (e.g. HfO x ), silicon oxide (e.g., SiO x ), tantalum oxide (e.g. TaO x ), aluminum oxide (e.g. AlO x ), titanium oxide (e.g. TiO x ), yttrium oxide (e.g. YO x ), gadolinium oxide (e.g. GdO x ), lanthanum oxide (e.g. LaO x ), strontium oxide (e.g. SrO x) and / or the like. In some embodiments, the unstructured amorphous initiation layer 1606 may be formed using an atomic layer deposition (ALD) process. In other embodiments, the unstructured amorphous initiation layer 1606 may be formed using a high-temperature oxidation process in a furnace. In some embodiments, the unstructured amorphous initiation layer 1606 may be formed to have an amorphous phase.

[0089] In some embodiments, the unstructured amorphous initiation layer 1606 may comprise and / or be a material with a relatively high crystallization temperature. Due to the relatively high crystallization temperature, the unstructured amorphous initiation layer 1606 may remain amorphous during later high-temperature processes. By the unstructured amorphous initiation layer 1606 remaining amorphous during later high-temperature processes, the unstructured amorphous initiation layer 1606 may represent a phase of a later-fabricated ferroelectric material interlayer (e.g., 1702 of Fig. 17). In some embodiments, the unstructured amorphous initiation layer 1606 may comprise a first material having a first crystallization temperature that is higher than a second crystallization temperature of a second material of a later-formed ferroelectric material interlayer (e.g., 1702 of Fig. 17), such that the amorphous initiation layer 110 remains amorphous even while the later-formed ferroelectric material interlayer is converted into a crystalline phase (e.g., an orthorhombic crystalline phase). In some embodiments, the unstructured amorphous initiation layer 1606 may comprise and / or be a material whose crystallization temperature is greater than about 400°C, greater than about 500°C, greater than about 750°C, or other similar values.

[0090] As shown in the sectional view 1700 of Fig. 17, a ferroelectric material interlayer 1702 is formed on the unpatterned amorphous initiation layer 1606. In some embodiments, the ferroelectric material interlayer 1702 may be formed to have a substantially uniform amorphous phase. In some embodiments, the ferroelectric material interlayer 1702 may comprise hafnium oxide, hafnium zirconium oxide (HZO), bleach zirconate titanate (PZT), or the like. In some embodiments, the ferroelectric material interlayer 1702 may be formed using an atomic layer deposition (ALD) process. In other embodiments, the ferroelectric material interlayer 1702 may be formed using a PVD process, a CVD process, a PE-CVD process, or the like.

[0091] In some further embodiments, one or more additional unstructured amorphous initiation layers and / or one or more ferroelectric material interlayers may be formed over the bottom electrode layer 1604. The one or more additional unstructured amorphous initiation layers and / or one or more ferroelectric material interlayers may have the Fig. 5-8. In some embodiments, for example, a second unstructured amorphous initiation layer (e.g., the second amorphous initiation layer 502 of Fig. 5) may be formed on the ferroelectric material interlayer. In some further embodiments, a second ferroelectric material interlayer (e.g., the second ferroelectric switching layer 602 of Fig. 6) may be formed on the second amorphous initiation layer. In still further embodiments, a third amorphous initiation layer (e.g., the third amorphous initiation layer 702 of Fig. 7) on the second ferroelectric material intermediate layer.

[0092] As shown in the sectional view 1800 of Fig. 18, an annealing process 1802 may be performed after deposition of the ferroelectric material interlayer (1702 of Fig. 18). The annealing process 1802 produces a phase of the ferroelectric material intermediate layer (1702 of Fig. 18) to form a ferroelectric material layer 1804. For example, the annealing process 1802 may convert an amorphous phase of the intermediate ferroelectric material layer into a ferroelectric material layer 1804 having a substantially uniform orthorhombic crystalline phase, such that the ferroelectric material layer 1804 has a predominantly orthorhombic crystalline phase. In some embodiments, the annealing process 1802 may be performed at a temperature ranging between about 200°C and about 700°C, between about 200°C and about 500°C, between about 250°C and about 400°C, between about 300°C and about 400°C, or other similar values.

[0093] As shown in the sectional view from 1900 by Fig. 19, a top electrode layer 1902 is formed over the ferroelectric material layer 1804. The top electrode layer 1902 may comprise a metal, a metal nitride, or the like. In some embodiments, the top electrode layer 1902 may comprise tungsten, tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, platinum, iridium, or the like. In some embodiments, the top electrode layer 1902 may be formed using a deposition process (e.g., a PVD process, a CVD process, a PE-CVD process, or the like). In some alternative embodiments, the annealing process may be performed after the top electrode layer 1902 is deposited.

[0094] As shown in the sectional view 2000 of Fig. 20, one or more patterning processes 2002 are applied to the upper electrode layer (1902 of Fig. 19), the ferroelectric material layer (1804 by Fig. 19), the unstructured amorphous initiation layer (1606 by Fig. 19), the lower electrode layer (1604 of Fig. 19) and the diffusion barrier layer (1602 of Fig. 19) to fabricate a ferroelectric memory device 104 having a ferroelectric switching layer 112 and an amorphous initiation layer 110 disposed between a bottom electrode 108 and a top electrode 114. The one or more patterning processes 2002 remove a portion of the top electrode layer (1902 of Fig. 19) to produce the upper electrode 114, remove a part of the ferroelectric material layer (1802 of Fig. 19) to produce a ferroelectric switching layer 112, remove a part of the unstructured amorphous initiation layer (1606 of Fig. 19) to produce an amorphous initiation layer 110, remove a part of the lower electrode layer (1604 of Fig. 19) to produce a lower electrode 108 and remove part of the diffusion barrier layer (1602 of Fig. 19) to create a diffusion barrier 206.

[0095] In some embodiments, the one or more patterning processes 2002 may include a patterning process configured to pattern the top electrode layer (1902 of Fig. 19) is selectively treated with an etchant according to a masking layer. In various embodiments, the masking layer 2004 may comprise a metal (e.g., titanium, titanium nitride, tantalum, or the like), a dielectric material (e.g., silicon nitride, silicon carbide, or the like), a photosensitive material (e.g., photoresist), or the like. In some further embodiments, the one or more patterning processes 2002 may include a first patterning process configured to pattern the top electrode layer (1902 of Fig. 19) is selectively treated with a first etchant according to the masking layer to form the upper electrode 114. In some embodiments, one or more sidewall spacers may be formed along opposite sides of the upper electrode 114 and the masking layer after the first patterning process has been completed. In some embodiments, the one or more patterning processes 2002 may further comprise a second patterning process performed after the one or more sidewall spacers have been formed. The second patterning process is configured such that the ferroelectric switching layer (1802 of Fig. 19), the amorphous initiation layer (1606 by Fig. 19) and the lower electrode layer (1604 of Fig. 19) and the diffusion barrier layer (1602 of Fig. 19) are selectively treated with a second etchant in areas not covered by the masking layer and the one or more sidewall spacers.

[0096] As shown in section view 2100 of Fig. 21, a top ILD layer 106U is formed over the ferroelectric memory device 104. In some embodiments, the top ILD layer 106U may be formed using a deposition process (e.g., PVD, CVD, PE-CVD, ALD, or the like). In various embodiments, the top ILD layer 106U may comprise silicon dioxide, carbon-doped silicon dioxide, silicon oxynitride, borosilicate glass (BSG), phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), fluorosilicate glass (FSG), undoped silicate glass (USG), and / or a porous dielectric material, or the like.

[0097] As shown in section view 2200 of Fig. 22, a top interconnect 116 is formed on the top electrode 114. The top interconnect 116 extends through the top ILD layer 106U to the top electrode 114. In some embodiments, the top interconnect 116 may be formed by selectively etching the top ILD layer 106U to form an opening extending from a top surface of the top ILD layer 106U to expose a top surface of the top electrode 114. In some embodiments, the opening may be formed by a third patterning process in which a third etchant is used to selectively etch the top ILD layer 106U according to a masking layer (e.g., photoresist). A conductive material (e.g., copper, aluminum, etc.) is formed in the opening. In some embodiments, after the conductive material is formed in the opening, a planarization process (e.g.,A CMP process is performed to remove excess conductive material over a top surface of the upper ILD layer 106U. In some embodiments, an interconnect via 312 may also be formed in the logic region 304. The interconnect via 312 is formed to extend from the top surface of the upper ILD layer 106U to the one or more additional lower interconnects 308.

[0098] The Fig. 23-32 show sectional views 2300-3200 of some alternative embodiments of a method for manufacturing an integrated chip with a ferroelectric data storage structure having an amorphous initiation layer. The method is described with reference to Fig. 23-32, but it is understood that the procedure does not apply to the Fig. 23-32, but is independent and independent of the structures disclosed in the Fig. 23-32 disclosed structures can be used.

[0099] As shown in section view 2300 of Fig. 23, a substrate 102 is provided. In some embodiments, the substrate 102 may include a memory area 302 and a logic area 304. In some embodiments, an access device 202 is fabricated on and / or in the substrate 102 in the memory area 302. In some further embodiments, a logic device 307 is fabricated on and / or in the substrate 102 in the logic area 304. In some embodiments, the access device 202 and / or the logic device 307 may be fabricated as described with reference to Fig. 13 has been described.

[0100] As shown in section view 2400 of Fig. 24, one or more lower ILD layers 106L are formed over the substrate 102. In some embodiments, one or more lower interconnects 204 are formed in the one or more lower ILD layers 106L in the memory region 302, and one or more additional lower interconnects 308 are formed in the one or more lower ILD layers 106L in the logic region 304. In some embodiments, the one or more lower interconnects 204 and / or the one or more additional lower interconnects 308 may be formed as described with reference to Fig. 14 has been described.

[0101] As shown in section view 2500 of Fig. 25, a lower isolation structure 310 is formed over the one or more ILD layers 106L and / or the one or more lower interconnects 204. In some embodiments, the lower isolation structure 310 may be selectively etched to form one or more sidewalls 310s of the lower isolation structure 310 that define an opening 2502 extending through the lower isolation structure 310 to expose a top surface of the one or more lower interconnects 204.

[0102] As shown in section view 2600 of Fig. 26, a diffusion barrier layer 2602 is formed over the lower isolation structure 310. The diffusion barrier layer 2602 extends from above the lower isolation structure 310 into the opening 2502 and along the one or more sidewalls 310s of the lower isolation structure 310. The diffusion barrier layer 2602 is formed to have angled inner sidewalls that define a first recess in the top surface of the diffusion barrier layer 2602. A bottom electrode layer 2604 is formed over the diffusion barrier layer 2602. The bottom electrode layer 2604 extends from above the diffusion barrier layer 2602 into the opening 2602 and along the angled inner sidewalls of the diffusion barrier layer 2602. The bottom electrode layer 2604 is fabricated to have angled inner sidewalls that define a second recess in the top surface of the diffusion barrier layer 2602.An unstructured amorphous initiation layer 2606 is formed over the bottom electrode layer 2604. The unstructured amorphous initiation layer 2606 extends from above the bottom electrode layer 2604 into the opening 2502 and along the angled inner sidewalls of the bottom electrode layer 2604. The unstructured amorphous initiation layer 2606 is formed to have angled inner sidewalls that define a third recess in the top surface of the unstructured amorphous initiation layer 2606.

[0103] As shown in section view 2700 of Fig. 27, a ferroelectric material interlayer 2702 is formed over the unpatterned amorphous initiation layer 2606. In some embodiments, the ferroelectric material interlayer 2702 may be formed to have a substantially uniform amorphous phase. The ferroelectric material interlayer 2702 extends from over the unpatterned amorphous initiation layer 2606 into the opening 2502 and along the angled inner sidewalls of the unpatterned amorphous initiation layer 2606. The ferroelectric material interlayer 2702 is formed to have angled inner sidewalls that define a fourth recess in the top surface of the ferroelectric material interlayer 2702.

[0104] As shown in section view 2800 of Fig. 28, an annealing process 2802 may be performed after deposition of the ferroelectric material intermediate layer (2702 of Fig. 18). The annealing process 2802 produces a phase of the ferroelectric material intermediate layer (2702 of Fig. 18). For example, the annealing process 2802 may convert an amorphous phase of the ferroelectric material interlayer into a ferroelectric material layer 2804 having a substantially uniform orthorhombic crystalline phase. In some embodiments, the annealing process 2802 may be performed at a temperature ranging between about 200°C and about 700°C, between about 200°C and about 500°C, between about 250°C and about 400°C, between about 300°C and about 400°C, or other similar values.

[0105] As shown in section view 2900 of Fig. As shown in Figure 29, a top electrode layer 2902 is formed over the ferroelectric material layer 2804. The top electrode layer 2902 extends from above the ferroelectric material layer 2804 into the fourth recess and along the inner sidewalls of the ferroelectric material layer 2804.

[0106] As shown in section view 3000 of Fig. 30, the one or more patterning processes 3004 are applied to the upper electrode layer (2902 of Fig. 29), the ferroelectric material layer (2802 of Fig. 29), the unstructured amorphous initiation layer (2606 of Fig. 29), the lower electrode layer (2604 of Fig. 29) and the diffusion barrier layer (2602 of Fig. 29) according to a masking layer 3002. With the one or more patterning processes 3004, a ferroelectric memory device 104 is manufactured with a ferroelectric switching layer 112 and an amorphous initiation layer 110 arranged between a lower electrode 108 and an upper electrode 114. The one or more patterning processes 3004 remove a portion of the upper electrode layer (2902 of Fig. 19) to produce the upper electrode 114, remove a part of the ferroelectric material layer (2802 of Fig. 19) to produce a ferroelectric switching layer 112, remove a part of the unstructured amorphous initiation layer (2606 of Fig. 29) to produce an amorphous initiation layer 110, remove a part of the lower electrode layer (2604 of Fig. 29) to produce a lower electrode 108 and remove part of the diffusion barrier layer (2602 of Fig. 29) to create a diffusion barrier 206.

[0107] As shown in section view 3100 of Fig. 31, an upper ILD layer 106U is formed over the ferroelectric memory device 104. In some embodiments, the upper ILD layer 106U may be formed as described with reference to Fig. 21 has been described.

[0108] As shown in section view 3200 of Fig. 32, an upper interconnect 116 is formed on the upper electrode 114. The upper interconnect 116 extends through the upper ILD layer 106U to the upper electrode 114. In some embodiments, the upper interconnect 116 may be formed as described with reference to Fig. 22. In some embodiments, an interconnect via 312 may also be formed in the logic region 304 to extend through the upper ILD layer 106U to the one or more additional lower interconnects 308.

[0109] Fig. 33 shows a flow diagram of some embodiments of a method 3300 for manufacturing an integrated chip with a ferroelectric data storage structure having an amorphous initiation layer.

[0110] While the method is illustrated and described herein as a series of steps or events, the illustrated order of those steps or events is not limiting. For example, some steps may be performed in different orders and / or concurrently with other steps or events than those illustrated and / or described herein. Furthermore, not all illustrated steps may be required to implement one or more aspects or embodiments of the description herein. Furthermore, one or more of the steps described herein may be performed in a single step or in multiple separate steps and / or phases.

[0111] In step 3302, an access device may be fabricated on and / or in a substrate. Fig. 13 shows a sectional view 1300 of some embodiments corresponding to step 3302. Fig. 23 shows a sectional view 2300 of an alternative embodiment corresponding to step 3302.

[0112] In step 3304, one or more lower interconnects are formed in one or more lower interlayer dielectric (ILD) layers over the substrate. Fig. 14 shows a sectional view 1400 of some embodiments corresponding to step 3304. Fig. 24 shows a sectional view 2400 of an alternative embodiment corresponding to step 3304.

[0113] In step 3306, a lower isolation structure is formed over the one or more lower ILD layers and the one or more lower interconnects. Fig. 15 shows a sectional view 1500 of some embodiments corresponding to step 3306. Fig. 25 shows a sectional view 2500 of an alternative embodiment corresponding to step 3306.

[0114] In step 3308, a diffusion barrier layer is formed on the lower insulation layer and / or in an opening extending through the lower insulation structure to the one or more lower interconnects. Fig. 16 shows a sectional view 1600 of some embodiments corresponding to step 3308. Fig. 26 shows a sectional view 2600 of an alternative embodiment corresponding to step 3308.

[0115] In step 3310, a bottom electrode layer is formed on the diffusion barrier layer. Fig. 16 shows a sectional view 1600 of some embodiments corresponding to step 3310. Fig. 26 shows a sectional view 2600 of an alternative embodiment corresponding to step 3310.

[0116] In step 3312, an unstructured amorphous initiation layer is formed on the lower electrode layer. Fig. 16 shows a sectional view 1600 of some embodiments corresponding to step 3312. Fig. 26 shows a sectional view 2600 of an alternative embodiment corresponding to step 3312.

[0117] In step 3314, a ferroelectric switching interlayer having a substantially uniform amorphous phase is formed on the unpatterned amorphous initiation layer. Fig. 17 shows a sectional view 1700 of some embodiments corresponding to step 3314. Fig. 27 shows a sectional view 2700 of an alternative embodiment corresponding to step 3314.

[0118] In step 3316, an annealing process is performed to convert the ferroelectric switching interlayer having a substantially uniform amorphous phase into a ferroelectric switching layer having a substantially uniform orthorhombic crystalline phase. Fig. 18 shows a sectional view 1800 of some embodiments corresponding to step 3316. Fig. 28 shows a sectional view 2800 of an alternative embodiment corresponding to step 3316.

[0119] In step 3318, an upper electrode layer is formed on the ferroelectric switching layer. Fig. 19 shows a sectional view 1900 of some embodiments corresponding to step 3318. Fig. 29 shows a sectional view 2900 of an alternative embodiment corresponding to step 3318.

[0120] In step 3320, one or more patterning processes are performed to fabricate a ferroelectric memory device. Fig. 20 shows a sectional view 2000 of some embodiments corresponding to step 3320. Fig. 30 shows a sectional view 3000 of an alternative embodiment corresponding to step 3320.

[0121] In step 3322, an upper ILD layer is formed over the ferroelectric memory device. Fig. 21 shows a sectional view 2100 of some embodiments corresponding to step 3322. Fig. 31 shows a sectional view 3100 of an alternative embodiment corresponding to step 3322.

[0122] In step 3324, a top interconnect is formed to extend through the top ILD layer to a top electrode of the ferroelectric memory device. Fig. 22 shows a sectional view 2200 of some embodiments corresponding to step 3324. Fig. 32 shows a sectional view 3200 of an alternative embodiment corresponding to step 3324.

[0123] Accordingly, in some embodiments, the present disclosure relates to an integrated chip with a ferroelectric memory device having a ferroelectric data storage structure whose amorphous initiation layer is configured to cause a ferroelectric switching layer to be formed thereover to have a substantially uniform orthorhombic crystalline phase. The substantially uniform orthorhombic crystalline phase enhances a ferroelectric response of the ferroelectric switching layer and thereby improves the performance of the ferroelectric memory device.

Claims

[1] A method for manufacturing an integrated chip (100, 200, 300, 314, 400, 408, 500, 600, 700) comprising the following steps: forming a lower electrode layer (1604, 2604) over a substrate (102); Producing an unstructured amorphous initiation layer (110, 1606, 2606) on the lower electrode layer (1604, 2604); forming a ferroelectric material interlayer (1702, 2702) on the unstructured amorphous initiation layer (110, 1606, 2606), wherein the ferroelectric material interlayer (1702, 2702) is formed to have a substantially uniform amorphous phase; performing an annealing process configured to convert the intermediate ferroelectric material layer (1702, 2702) into a ferroelectric material layer (1804, 2804) having a substantially uniform orthorhombic crystalline phase; Forming an upper electrode layer (1902, 2902) over the ferroelectric material layer (1804, 2804); Performing one or more patterning processes on the upper electrode layer (1902, 2902), the ferroelectric material layer (1804, 2804), the unpatterned amorphous initiation layer (110, 1606, 2606) and the lower electrode layer (1604, 2604) to produce a ferroelectric memory device (104); forming an upper interlayer dielectric layer (106U) over the ferroelectric memory device (104); Producing an upper interconnect (116, 424) extending through the upper interlayer dielectric layer to contact the ferroelectric memory device (104), Producing a second unstructured amorphous initiation layer (502) on the ferroelectric material intermediate layer (1702, 2702); and Structuring the second unstructured amorphous initiation layer (502) to produce the ferroelectric memory device (104). [2] The method of claim 1, further comprising: Producing the upper electrode layer (1902, 2902) after carrying out the annealing process. [3] The method of claim 1 or 2, wherein the annealing process (1802, 2802) is performed at a temperature ranging between about 250°C and about 400°C. [4] Method according to one of the preceding claims, wherein the unstructured amorphous initiation layer (110, 1606, 2606) comprises an oxide or a nitride. [5] The method of claims 1 to 4, wherein the second unstructured amorphous initiation layer (502) comprises a same material as the unstructured amorphous initiation layer (110, 1606, 2606). [6] The method of claims 1 to 4, wherein the second unstructured amorphous initiation layer (502) comprises a different material than the unstructured amorphous initiation layer (110, 1606, 2606). [7] A method according to any one of claims 1 to 6, further comprising: Producing a second ferroelectric material intermediate layer (602) on the second unstructured amorphous initiation layer (502); and Patterning the second ferroelectric material interlayer (602) to produce the ferroelectric memory device (104). [8] The method of claim 7, further comprising: Producing a third unstructured amorphous initiation layer (702) on the second ferroelectric material intermediate layer (602); and Structuring the third unstructured amorphous initiation layer (702) to produce the ferroelectric memory device (104). [9] A method for manufacturing an integrated chip (100, 200, 300, 314, 400, 408, 500, 600, 700) comprising the following steps: forming one or more lower interconnects (308) in one or more lower interlayer dielectric layers (106L) over a substrate (102); forming a lower isolation structure (310) over the one or more lower interlayer dielectric layers (106L), the lower isolation structure (310) having angled sidewalls (310s) defining an opening (1502, 2502) extending through the lower isolation structure (310); forming a lower electrode layer (1604, 2604) over the lower insulation structure (310); forming an unstructured amorphous initiation layer (110, 1606, 2606) over the lower electrode layer (1604, 2604), the unstructured amorphous initiation layer (110, 1606, 2606) having an amorphous phase; Forming a ferroelectric material interlayer (1702, 2702) contacting a top surface of the unstructured amorphous initiation layer (110, 1606, 2606), the unstructured amorphous initiation layer (110, 1606, 2606) being configured to cause the ferroelectric material interlayer (1702, 2702) to be formed to have a substantially amorphous phase between outermost sidewalls of the ferroelectric material interlayer (1702, 2702); Performing an annealing process configured to convert the ferroelectric material intermediate layer (1702, 2702) from the amorphous phase into a ferroelectric material layer (1804, 2804) having a crystalline phase; Forming an upper electrode layer (1902, 2902) over the ferroelectric material layer (1804, 2804); Performing one or more patterning processes on the upper electrode layer (1902, 2902), the ferroelectric material layer (1804, 2804), the unpatterned amorphous initiation layer (110, 1606, 2606) and the lower electrode layer (1604, 2604) to produce a ferroelectric memory device (104); forming an upper interlayer dielectric layer (106U) over the lower insulation structure (310); and Producing an upper interconnect (424) extending through the upper interlayer dielectric layer to contact the ferroelectric memory device (104), wherein the unstructured amorphous initiation layer (110, 1606, 2606) comprises silicon nitride, tantalum nitride or aluminum nitride. [10] The process according to claim 9, wherein the crystalline phase is an orthorhombic crystalline phase. [11] The method of claim 9 or 10, wherein the unstructured amorphous initiation layer (110, 1606, 2606) comprises a first material having a first crystallization temperature, and the ferroelectric material interlayer (1702, 2702) comprises a second material having a second crystallization temperature that is lower than the first crystallization temperature. [12] A method according to any one of claims 9 to 11, further comprising: Forming the lower electrode layer (1604, 2604), the unstructured amorphous initiation layer (110, 1606, 2606) and the ferroelectric material interlayer (1702, 2702) along the sidewalls of the lower insulation structure (310). [13] The method of any one of claims 9 to 12, wherein the unstructured amorphous initiation layer (110, 1606, 2606) comprises silicon oxide, tantalum oxide, aluminum oxide, yttrium oxide, gadolinium oxide, lanthanum oxide or strontium oxide. [14] The method of any one of claims 9 to 13, wherein the unstructured amorphous initiation layer (110, 1606, 2606) extends continuously from a bottom surface contacting the lower electrode layer (1604, 2604) to a top surface contacting the ferroelectric material intermediate layer (1702, 2702). [15] The method of any one of claims 9 to 14, wherein the unstructured amorphous initiation layer (110, 1606, 2606) is formed to a thickness (208) of less than or equal to about 3 nm. [16] Integrated chip with: a lower electrode (108) comprising a first metal disposed over a substrate (102); an upper electrode (114) comprising a second metal disposed over the lower electrode (108); a ferroelectric data storage structure (109) arranged between the lower electrode (108) and the upper electrode (114), the ferroelectric data storage structure (109) comprising a ferroelectric switching layer (112) and an amorphous initiation layer (110, 1606, 2606), the amorphous initiation layer (110, 1606, 2606) separating the ferroelectric switching layer (112) from the lower electrode (108), the amorphous initiation layer (110, 1606, 2606) contacting the ferroelectric switching layer (112) and the lower electrode (108); wherein the amorphous initiation layer (110, 1606, 2606) has a structure (106) configured to influence a crystalline phase of the ferroelectric switching layer (112); wherein the ferroelectric switching layer (112) has a substantially uniform orthorhombic crystalline phase extending between outermost surfaces of the ferroelectric switching layer (112), and wherein the ferroelectric data storage structure (109) comprises a second amorphous initiation layer (110, 1606, 2606) separated from the amorphous initiation layer (110, 1606, 2606) by the ferroelectric switching layer (112). [17] The integrated chip of claim 16, further comprising: one or more lower interconnects disposed in one or more lower interlayer dielectric layers above the substrate (102); a lower isolation structure (310) disposed over the one or more lower interlayer dielectric layers, the lower isolation structure (310) having one or more sidewalls defining an opening (1502, 2502) extending through the lower isolation structure (310); and the amorphous initiation layer (110, 1606, 2606) being disposed directly between the one or more sidewalls of the lower isolation structure (310).

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