Optoelectronic lighting device, optoelectronic lighting device and manufacturing method

Abstract

Optoelectronic lighting device comprising a carrier; at least one light-emitting, optoelectronic semiconductor component (23), in particular an LED or an LED chip, wherein the semiconductor component (23) is arranged on a top side (25) of the carrier (27), and wherein the semiconductor component (23) has an exit region (31) for light on a surface facing away from the carrier; a filling layer (33) arranged on a top side (25) of the carrier (27); at least one functional layer (37) arranged above the exit region (31) and / or next to the exit region (31); an intermediate layer (55) arranged on the functional layer; an enclosure (39) for the functional layer (37), wherein the enclosure (39) surrounds the functional layer (37) in a circumferential direction (U), wherein the circumferential direction (U) is parallel to the carrier top side (25) around the functional layer (37) runs, and at least one covering layer (41),which is arranged above the intermediate layer (55) and the enclosure (39).

Description

The present invention relates to an optoelectronic lighting device, an optoelectronic lighting device and a method for producing at least one optoelectronic lighting device or an optoelectronic lighting device.DE 10 2012 102 114 A1 describes an optoelectronic lighting device, the emitted light of which can be used efficiently. The documents US 2011 / 0 108 851 A1, US 2015 / 0 049 510 A1, WO 2015 / 036 887 A1, US 2012 / 0 025 167 A1 and DE 10 2011 112 710 A1 represent the closest prior art.An object to be achieved of the present invention is to provide an optoelectronic lighting device which can be produced in a simple manner and is insensitive to influences (such as moisture) of the environment.The object is achieved by an optoelectronic lighting device having the features of claim 1.An optoelectronic lighting device according to the invention is defined by the claims and comprises:at least one light-emitting semiconductor component, in particular an LED (light-emitting diode) or an LED chip, wherein the semiconductor component has an exit region for light on at least one surface side,a carrier for the semiconductor component, wherein the semiconductor component is arranged on a top side of the carrier,at least one functional layer, in particular a conversion layer for converting light that has emerged from the exit region into light having at least one other wavelength, wherein the functional layer is arranged above the exit region and / or next to the exit region, anda surround for the functional layer, wherein the surround surrounds the functional layer as viewed in a circumferential direction, wherein the circumferential direction runs parallel to the carrier top side around the functional layer.The functional layer can be a conversion layer. The conversion layer can comprise, for example, phosphor, for example phosphor, and in particular consist of a silicone-phosphor mixture. More generally, the functional layer can be any layer which is arranged as a layer directly above the light-emitting semiconductor component.The light-emitting semiconductor component can be, in particular, a surface emitter, the exit region of which for light lies on the upper side of the light-emitting semiconductor component facing away from the carrier. The functional layer can lie directly above the exit region for light and can thus be in contact with the exit region.The light-emitting semiconductor component can also be a volume emitter which has an exit region for light on the upper side facing away from the carrier. Alternatively or additionally, the light-emitting semiconductor part can have an exit region for light on at least one lateral surface which runs perpendicular to the carrier surface. The functional layer can also be arranged in the plane of the lateral surface and thus be provided next to the semiconductor component.Within the scope of the present disclosure, light is intended to mean not only light in the visible wavelength range, but more generally any electromagnetic radiation that can be emitted by a light-emitting semiconductor component. In particular, light is also intended to mean electromagnetic radiation in the infrared or ultraviolet wavelength range.The optoelectronic lighting device can in particular comprise exactly one light-emitting optoelectronic semiconductor component. A particularly compact configuration of the lighting device is therefore possible.In the optoelectronic lighting device, the enclosure surrounds the functional layer as viewed in the circumferential direction. The enclosure thus forms an edge which extends around the functional layer and by means of which the functional layer can be protected from influences of the environment, for example from oxygen or moisture. Since a functional or conversion layer can contain phosphor, this phosphor can be protected from moisture and / or oxygen, for example, by the enclosure.The enclosure can surround the functional layer in such a way that the functional layer is arranged completely within the enclosure, as seen in a direction parallel to the carrier top side. As a result, the functional layer can be protected particularly well from influences which act on the optoelectronic lighting device from the side.The enclosure can have an enclosure encircling in the circumferential direction, in the center of which an aperture through is provided, wherein the enclosure surrounds the functional layer in such a way that the center of the enclosure lies above the exit region of the semiconductor component and the functional layer fills the aperture at least partially and preferably completely. The formulation that the center of the border lies above the exit region of the semiconductor component is to be understood in particular such that the center of the border, as viewed along a straight line which runs perpendicular to the carrier top side, lies above the center of the exit region of the optoelectronic semiconductor component or coincides with the center. In the case of a volume emitter having an exit region on at least one lateral surface, the geometric center of the volume emitter can also be meant as the center.The border can thus form an outer edge region around the functional layer. Since the center of the border lies above the exit region of the semiconductor component, the functional layer, for example a conversion layer, is situated above the exit region. The light from the optoelectronic semiconductor component can thus pass into the functional layer. The light can pass from the functional layer further to the top side of the optoelectronic lighting device facing away from the carrier and be emitted outwards there. The light can alternatively or additionally pass through the border transparent to the light and be emitted to the outside on at least one lateral surface of the lighting device.The border of the surround can have at least one outer side, which lies on a lateral surface of the lighting device. The outer side of the border can thus form part of the lateral surface of the lighting device. A single optoelectronic lighting device can be produced from a contiguous, matrix-like arrangement of such optoelectronic lighting devices. During the separation of the optoelectronic lighting devices, the matrix-like optoelectronic lighting devices are separated from one another. This can be done by means of a severing process, for example by means of a cutting process, wherein a severing is done in planes which run perpendicular to the carrier top side. The lateral surfaces of the singulated lighting devices are then located in the separating planes. If the border of the border is now located on the lateral upper side of the lighting device, this means that no separation by the functional layer has taken place in the layer plane of the functional layer, but by the border of the border. This has the advantage, for example, that during the severing process the functional layer does not come into contact with a cutting tool and therefore no regions or particles can be torn out of the functional layer or damaged. Such damage could lead to aging problems, for example in the case of a conversion layer in the case of moisture-sensitive and / or surface-coated phosphors. Furthermore, such damage at a light exit surface could produce a very rough surface, which has a negative effect on the component efficiency.According to a preferred development of the invention, at least one outer side of a border of the border does not lie on a lateral surface of the lighting device, but at least one edge layer, in particular made of a potting material, is formed between the outer side and the lateral surface. The edge layer can be at least partially transparent. The enclosure can thus be formed in a material-saving and cost-effective manner and be set back to the rear with respect to the lateral surface.The enclosure may have a refractive index that is between the refractive index of the conversion material and air. The coupling-out efficiency can thereby be increased.The enclosure may be formed of a transparent material. The enclosure may be formed from a material comprising or consisting of silicone and / or glass.The enclosure can be formed from a material, as is used, for example, for forming dams in electrical or optoelectronic components. The material can be, for example, a viscous, curing silicone, which can be applied by means of a dispenser.The functional layer can be flat on its upper side facing away from the carrier upper side or can have a depression in the middle of the upper side. The upper side recessed in the middle can be designed in particular for reflector shaping. As a result, light can be directed outwards to the lateral surfaces of the lighting device in an improved manner.Above the top side of the functional layer, at least one further layer can be provided. In particular, at least one layer arranged above the functional layer can comprise silicone and / or titanium dioxide (TiO 2) and in particular consist of silicone mixed with titanium dioxide.The light-emitting semiconductor component can be surrounded on its lateral surfaces by a filler material, for example a silicone material which can be mixed with titanium dioxide. The upper side of the semiconductor component and the upper side of the filling material can form a planar surface on which the functional layer and the enclosure can be arranged. The enclosure can also project at least partially into the filling material.In particular, at least one cover layer can be provided over the functional layer and the enclosure. The cover layer can be designed to be light-tight. It can thus be opaque to the light generated. Light emission through the cover layer and thus on the upper side of the lighting device can thereby be avoided. In contrast, the cover layer can support emission on the lateral surfaces of the lighting device. The enclosure is preferably made of a transparent material, so that the light can pass through the enclosure and emerge at a lateral surface of the lighting device.The cover layer can be designed to be reflective towards the functional layer. Light can therefore be reflected at the interface between the cover layer and the functional layer from the cover layer back into the functional layer. When the functional layer is a conversion layer, the conversion efficiency can be improved.In addition, a reflective cover layer can act as a type of light guide in order to prevent light from emerging upward and in order to guide the light to a certain extent outwards through the enclosure which is at least partially transparent to the light. The light can thus emerge at a lateral surface of the lighting device.Preferably, the cover layer can have a convex, outwardly curved curvature on its underside facing the functional layer. As a result, the cover layer can act in an improved manner as a reflector in order to direct the light towards the lateral outer sides of the device.The invention also relates to an optoelectronic lighting device, in particular an LED panel, comprising:a carrier device, wherein a plurality of light spots is arranged in a matrix-like manner on an upper side of the carrier device, wherein each light spot comprises at least one and preferably exactly one light-emitting semiconductor component which has an exit region for light on at least one surface side,a functional layer above and / or next to the exit regions of the plurality of light emitting points, in particular a conversion layer for converting light of the semiconductor components into light having at least one other wavelength,a plurality of enclosures for the functional layer, each enclosure having an enclosure circumferentially extending in a circumferential direction, a continuous opening being provided in the center of the enclosure,preferably at least one cover layer over the functional layer and the enclosures,wherein the enclosures are arranged or formed at least in the plane of the functional layer such that the center of a respective enclosure is at least approximately above a respective light spot and the enclosure surrounds a region of the functional layer above and / or next to the respective light spot,wherein the region of the functional layer fills the opening of the respective enclosure at least partially and preferably completely.The optoelectronic lighting device can be considered in particular as a matrix-like arrangement of optoelectronic lighting devices, wherein the optoelectronic lighting devices can be produced from the optoelectronic lighting device by a singulating process. A matrix-like arrangement of optoelectronic lighting devices is understood here in particular to mean an array-like arrangement in which the lighting devices are arranged in a plurality of columns or rows. Accordingly, a matrix-like arrangement of the light spots is understood to mean an arrangement in which the light spots are arranged in an array-like manner in a plurality of columns or rows.The enclosures can divide the functional layer into individual regions in a matrix-like manner in accordance with the matrix-like arrangement of the luminous points, wherein for each region the center of a respective enclosure is at least approximately above a respective luminous point and the enclosure surrounds the region of the functional layer above and / or next to the respective luminous point. The regions of the functional layer can lie in particular in the openings of the enclosures, wherein adjacent regions of the functional layer are separated from one another by an enclosure surrounding a respective region.The invention also relates to a method for producing at least one optoelectronic lighting device or an optoelectronic lighting device, in particular a lighting device according to the invention or an optoelectronic lighting device according to the invention, wherein in the method:a carrier device is provided, wherein a plurality of light spots is arranged in a matrix-like manner on an upper side of the carrier device, wherein each light spot comprises at least one and preferably exactly one light-emitting semiconductor component which has an exit region for light on at least one surface side,in a layer plane above and / or next to the exit regions of the plurality of light emitting points, a functional layer, in particular a conversion layer for converting light of the semiconductor components into light having at least one other wavelength, and a plurality of enclosures are provided,preferably at least one cover layer is provided over the functional layer and the enclosures,wherein each enclosure of the plurality of enclosures has an enclosure running circumferentially, in the center of which an opening through is provided,wherein the enclosures are arranged or formed such that the center of the enclosure of a respective enclosure is located at least approximately above a respective light spot and the enclosures divide the functional layer into individual areas above and / or next to the light spots.According to a preferred embodiment of the method according to the invention, the plurality of enclosures is first arranged or formed in the layer plane provided for the functional layer and only then is the functional layer formed, in particular in the openings of the enclosures.Conversely, the functional layer can also be formed first and then the plurality of enclosures is arranged or formed in the layer plane of the functional layer, in particular by pressing the plurality of enclosures into the functional layer.Preferably, the plurality of enclosures is formed in a grid structure, in particular of a transparent material. The lattice structure may be formed from a solid material. The lattice structure can thus be pressed into the functional layer, in particular as long as the functional layer has not cured.The plurality of enclosures may be formed by applying a flowable material, in particular a viscous material. The plurality of enclosures may be formed, for example, similar to a dam, by a dispensing process. After curing of the flowable material, the functional layer can subsequently be formed in the intermediate regions of the enclosures. In particular, it can be provided that the light spots of the plurality of light spots are singulated. When separating the luminous points, it is preferably provided that no severing of the functional layer takes place in the layer plane of the functional layer, but only a severing of the enclosures takes place. The enclosures are thus located on the outer side of a singulated light spot and thus on the outer side of an optoelectronic lighting device formed by the singulation. This can achieve the effect that the functional layer in the case of a singulated optoelectronic lighting device lies within a surround. The functional layer can thus be protected by the surrounding enclosure from influences of the environment.Exemplary embodiments of the invention are explained in more detail below with reference to the appended figures. They show, in each case schematically, FIG. 1 shows a cross-sectional view of a first variant of an optoelectronic lighting device according to the invention, FIG. 2 shows a cross-sectional view of a second variant of an optoelectronic lighting device according to the invention, FIG. 3 shows a cross-sectional view of a third variant of an optoelectronic lighting device according to the invention, FIG. 4 shows a cross-sectional view of a fourth variant of an optoelectronic lighting device according to the invention, FIG. 5 shows a cross-sectional view of a fifth variant of an optoelectronic lighting device according to the invention, FIG. 6 shows a cross-sectional view of a first variant of an optoelectronic lighting device according to the invention, FIG. 7 shows a plan view of the optoelectronic illumination device of FIG. 6, FIG. 8 shows a plan view of a second variant of an optoelectronic illumination device according to the invention, FIG. 9 shows a plan view of a third variant of an optoelectronic lighting device according to the invention, and FIG. 10 shows a cross-sectional view of a variant, not according to the invention, of an optoelectronic lighting device according to the invention.The optoelectronic lighting device 21 illustrated in FIG. 1 comprises a light-emitting and optoelectronic semiconductor component 23 configured in the form of an LED or an LED chip, the underside of which is arranged on the upper side 25 of a carrier 27. The semiconductor device 23 has a light exit region 31 on its upper surface side 29.Laterally next to the semiconductor component 23, a filling layer 33 is arranged, which is formed, for example, from silicon mixed with titanium dioxide. In the illustrated example of FIG. 1, the fill layer 33 and the top surface side 29 form a planar surface. In the layer plane 35 lying above it, a functional layer 37 is arranged above the exit region 31 of the semiconductor component 23. The functional layer 37 can be, in particular, a conversion layer which is suitable for converting light emitted from the exit region 31 into light having at least one other wavelength. Such a conversion layer can have phosphor embedded in a matrix, for example.In the lighting device 21, a surround 39 is also provided for the functional layer 37. The enclosure 39 surrounds the functional layer 37 in a circumferential direction U which runs parallel to the carrier top side 25 around the functional layer 37. As the illustration in FIG. 1 shows, the enclosure 39 lies laterally above the outlet region 31 of the semiconductor component 23, with the result that the enclosure 39 has at least substantially no adverse effect on the emission properties of the semiconductor component 23. The enclosure 39 rests on the lateral filling layer 33 and forms with the functional layer 37 a planar upper surface on which a covering layer 41 is arranged. The cover layer 41 can be formed, for example, from a silicone material to which titanium dioxide is added.The enclosure 39 may be formed from a transparent material, which may include or consist of, for example, a silicone and / or glass.The bezel 39 may be disposed on the upper surface of the filling layer 33, for example, after forming the filling layer 33 in the shape of a solid body. The functional layer 37 can then be formed in the central opening 43 surrounded by the enclosure 39. Alternatively, the enclosure 39 may be formed of a viscous material, similar to a dam, for example by a dispensing process, on top of the fill layer 33. After the viscous material has cured, the functional layer 37 can then be formed again in the opening 43 surrounded by the material.As can be seen from FIG. 1, the surround 39 comprises a surround 45 which extends circumferentially in the circumferential direction U and which, in the exemplary embodiment shown, has a rectangular cross section, for example, and in the center of which the aforementioned, continuous opening 43 lies. The border 45 can also have a square, polygonal or circular cross section as seen in a plane of the circumferential direction U. Other cross-sectional shapes are also possible.As can also be seen from FIG. 1, the surround 39 or the surround 45 has an outer side 47 which is remote from the opening 43 and lies on a lateral surface of the lighting device 21. The lateral surfaces of the lighting device 21 are those outer surfaces which run upward perpendicular to the carrier surface 25.In the exemplary embodiment according to FIG. 1, the outer side 47 thus lies on an outer surface of the lighting device, whereas the functional layer 37 lies within the enclosure 39. The filling layer 33 is thus protected from environmental influences. Aging processes which are caused, for example, by moisture can thereby be avoided or at least reduced at the filling layer 33.The cover layer 41 can be designed to be light-tight, so that the light cannot emerge upward through the cover layer 41. The enclosure 39, on the other hand, can be made of a transparent material, so that the light can be radiated outwards through one of the lateral outer sides 47The cover layer 41 can be designed to be reflective towards the functional layer 37. Light can be reflected back into the functional layer 37 at the interface between the cover layer 41 and the functional layer 37. When the function layer 37 is a conversion layer, conversion efficiency can be improved.The reflective cover layer 41 may act as a kind of light guide. The same can apply to the filling layer 33. The light reflected back and forth between the cover layer 41 and the filling layer 33 can be directed towards the lateral outer sides 47 in an improved manner.The second variant of an optoelectronic lighting device 21 according to the invention shown in FIG. 2 differs from the variant according to FIG. 1 in that the border 45 projects into the filling layer 33. In a modification, the underside of the border 45 can also rest on the carrier top side 25. The enclosure 39 can thereby form a kind of stop edge for the filling layer 33.To produce the lighting device according to FIG. 2, for example, the filling layer 33 can first be formed, and subsequently the enclosure 39 formed from a solid and preferably transparent material can be pressed into the filling layer 33 from above. According to another example, the enclosure 39 may first be applied to the carrier top side 25 and subsequently the opening 43 of the enclosure 39 may be filled with the filling layer 33, in particular such that the filling layer 33 and the upper surface side 29 of the LED 23 form a planar surface. On this surface, as shown in FIG. 2, the functional layer 37 can again be formed.The third variant of an optoelectronic lighting device 21 according to the invention illustrated in FIG. 3 differs from the exemplary embodiment according to FIG. 1 in particular in that the top side of the functional layer 37 is not flat, but rather has a depression 49 in the center of the top side. The depression 49 can be configured in particular in such a way that the upper side of the functional layer 37 has a concave curvature. Accordingly, the lower surface of the overlying cover layer 41 has a convex curvature. The interface between the functional layer 37 and the cover layer 41 may act as a type of reflector for the light reflected on the underside of the cover layer 41 and reflect the light outwards to the side. The light emitted upward at the top side 29 of the component 23 can thus be deflected outward, for example by 90 degrees, and pass outward through the transparent enclosure 39. In the functional layer 37, the light can be converted into light having a different wavelength. The interface can therefore form a type of reflector 51. The coupling-out efficiency of the light generated in the lighting device 21 at the lateral surfaces 47 of the enclosure 39 can thereby be improved. The cover layer 41 can also be designed to be light-tight, while the surround 39 is transparent. In addition, the underside of the cover layer 41 facing the functional layer 37 can be designed as a reflector. The underside can be mirrored, for example.The fourth variant of a lighting device 21 according to the invention according to FIG. 4 differs from the variant according to FIG. 3 in particular in that a further, so-called intermediate layer 55 is provided below the cover layer 41. The intermediate layer 55 may be, for example, a transparent layer. The intermediate layer 55 can also be considered a further covering layer over the functional layer 37. As was mentioned above with reference to FIG. 1, it can also be designed to be light-tight and reflective toward the functional layer 37. This allows an exclusive decoupling of light at a lateral surface 47 to be realized.The fifth variant of an optoelectronic lighting device 21 according to the invention according to FIG. 5 differs from the variant according to FIG. 4 in that the outer side 47 of the border 45 of the border 39 does not lie on a lateral outer side of the lighting device 21, but rather that an edge layer 59 is formed between the outer side 47 and a lateral surface 57 of the lighting device 21. In the example shown, the edge layer 59 is formed by the intermediate layer 55 lying above it, which extends in the layer plane 35 of the functional layer 37 between the outer side 47 of the border 45 and the lateral surface 57 of the lighting device 21, as shown in FIG. 5. The intermediate layer 55 and thus in particular also the edge layer 59 can be formed from an, in particular transparent, potting material.The first variant of an optoelectronic lighting device 61 according to the invention, which variant is illustrated in cross section in FIG. 6 and in plan view in FIG. 7, comprises a carrier device 63 on the top side 65 of which a plurality of luminous points 67 is arranged in the manner of a matrix. Each light emitting point 67 comprises at least one light emitting semiconductor component, compare the semiconductor component 23 in FIGS. 1 to 5. A functional layer 37 is arranged above the exit regions of the at least one semiconductor component of a light spot 67, which functional layer is in particular a conversion layer for converting light of the semiconductor components into light having at least one other wavelength. Furthermore, a plurality of enclosures 39 is provided at least in the layer plane 35 of the functional layer 37. Each surround 39 has a surround 45 running around in a direction of rotation U, in the center of which a continuous opening 43 is provided. The enclosures 39 are arranged at least in the plane of the functional layer 35 in such a way that the center of a respective enclosure is at least approximately above a respective luminous point 67 and the enclosure 39 surrounds a region of the functional layer 37 above the respective luminous point 67, wherein the region of the functional layer 37 fills the opening 43 of the respective enclosure 39.The enclosures 39 thus subdivide the functional layer 37 into individual regions 69, corresponding to the matrix-like arrangement of the luminous points 67, wherein for each region 69, the center of a respective enclosure 39 is at least approximately above the respective luminous point 67 and the enclosure 45 surrounds the region 69 of the functional layer 37 above the respective luminous point 67.From the lighting device 61 according to FIGS. 6 and 7, a plurality of lighting devices 21 according to FIG. 1 can be produced by a singulating process. In this case, the carrier device 63 and the layers lying above it are cut through in separating planes E running perpendicular to the upper side 65 of the carrier device 63. these separating planes E run at least substantially centrally through the borders 39 or the borders 45. This ensures that the outer sides 47 of the borders 45 in the case of the singulated lighting devices 21 are located on the lateral surfaces of the singulated lighting devices 21, as shown in FIG. 1. The functional layer 37 of a singled out lighting device 21 can thus be protected from environmental influences by the surrounding enclosure 39.A severing along the planes E can be effected, for example, on the basis of sawing processes in which water cooling can be used. The enclosure 39 protects the functional layer 37 of the lighting devices 21 during the sawing operation, for example, from moisture due to the water cooling. Since a sawing process is not carried out directly on the material of the functional layer 37, no mechanical damage is additionally produced on the functional layer 37.The lighting devices 61 of FIGS. 8 and 9 are of similar construction to the lighting device of FIGS. 6 and 7. However, in the lighting device 61 of FIG. 8, the openings 43 of the borders 45 do not have a square cross section, but a hexagonal cross section, in particular with sides of at least substantially the same length. In the variant of FIG. 8, the enclosures 39 or the enclosures 45 are contiguous-as in the variant according to FIGS. 6 and 7. During a separating process and corresponding separations along the planes E, adjoining enclosures 39 are separated in this case.As FIGS. 7 and 8 show, the contiguous enclosures 39 form a type of lattice structure 71, which can be configured, for example, as a solid, in particular transparent, body. The grating structure 71 can be placed on the upper side of the filling layer 33 during the production of the illumination device 61 or can also be partially pressed into the latter (cf. the variant according to FIG. 2 ).In the lighting device 61 according to FIG. 9, the enclosures 39 are separated from each other. The border 45 of a respective border 39 has at least approximately a circular cross section. The borders 45 can be formed individually, for example by means of a dispensing method, in which the borders 39 or the borders 45 are formed with the application of a viscous material, which cures.The separation can in turn take place by means of transsection at the separation planes E. In this case, with respect to the layer plane 35 (cf. FIG. 6 ), a severing takes place in the region of the interspaces between the enclosures 39. These interspaces can be filled with an edge layer, cf. the edge layer 59 in FIG. 5. lighting devices according to FIG. 5 can thus be formed by singulating from the lighting device 61 of FIG. 9.The configuration of an optoelectronic lighting device which is not according to the invention and which is shown in FIG. 10 does not have a surround 39, in contrast to the lighting devices according to FIGS. 1 to 5. The functional layer 37 thus extends as far as the lateral outer sides of the lighting device. Influences from the environment can thus have a direct effect on the functional layer 37 and possibly accelerate an aging process.LIST OF REFERENCE CHARACTERS21 Optoelectronic lighting device 23 Light-emitting semiconductor component, LED 25 Carrier top side 27 Carrier 29 Surface side 31 Exit region 33 Filling layer 35 Layer plane 37 Functional layer 39 Enclosure 41 Cover layer 43 Opening 45 Enclosure 47 Outer side of the enclosure 49 Depression 51 Reflector 53 Top side 55 Intermediate layer 57 Lateral surface 59 Edge layer 61 Optoelectronic lighting device 63 Carrier device 65 Top side 67 Luminous points 69 Functional layer region 71 Grid structure U Circumferential direction E Separation plane

Claims

Optoelectronic lighting device having a carrier; at least one light-emitting optoelectronic semiconductor component (23), in particular an LED or an LED chip, wherein the semiconductor component (23) is arranged on an upper side (25) of the carrier (27), and wherein the semiconductor component (23) has an outlet region (31) for light on a surface facing away from the carrier, a filling layer (33) arranged on an upper side (25) of the carrier (27), at least one functional layer (37) arranged above the outlet region (31) and / or next to the outlet region (31), an intermediate layer (55) arranged on the functional layer, a surround (39) for the functional layer (37), wherein the surround (39) surrounds the functional layer (37) as viewed in a circumferential direction (U), wherein the circumferential direction (U) runs parallel to the carrier top side (25) around the functional layer (37), and at least one cover layer (41) which is arranged above the intermediate layer (55) and the enclosure (39).Optoelectronic lighting device according to claim 1, characterised in that the enclosure (39) surrounds the functional layer (37) in such a way that the functional layer (37) is arranged completely within the enclosure (39), as seen in a direction parallel to the carrier top side (25).Optoelectronic lighting device according to claim 1 or 2, characterised in that the enclosure (39) has an enclosure (45) running around in the circumferential direction (U), in the centre of which an opening (43) running through is provided, wherein the enclosure (39) surrounds the functional layer (37) in such a way that the centre of the enclosure (45) lies above the outlet region (31) of the semiconductor component (23) and / or above the centre of the semiconductor component (23) and the functional layer (37) at least partially and preferably completely fills the opening (43).Optoelectronic lighting device according to one of the preceding claims, characterized in that a border (45) of the border (39) has at least one outer side (47) which lies on a lateral surface (57) of the lighting device (21), wherein, in particular, the lateral surface (57) and / or the outer side (47) of the border (45) runs at least substantially perpendicular to the carrier top side (25).Optoelectronic lighting device according to one of the preceding claims, characterized in that at least one outer side (47) of a border (45) of the border (39) does not lie on a lateral surface (57) of the lighting device (21), but at least one edge layer (59), in particular made of a potting material, is formed between the outer side (47) and the lateral surface (57).Optoelectronic lighting device according to one of the preceding claims, characterized in that the enclosure (39) has a refractive index which lies between the refractive index of the conversion material and air.Optoelectronic lighting device according to one of the preceding claims, characterized in that the enclosure (39) is formed from a material which comprises or consists of silicone and / or glass.Optoelectronic lighting device according to one of the preceding claims, characterized in that the functional layer (37) is formed flat on its upper side facing away from the carrier upper side (25) or has a depression (49) in the middle of the upper side, in particular for forming a reflector (51).Optoelectronic lighting device according to one of the preceding claims, wherein the cover layer is light-tight and / or is designed to be reflective towards the functional layer (37).Optoelectronic lighting device, comprising: a carrier device (63), wherein a plurality of light emitting points (67) is arranged in a matrix-like manner on an upper side (65) of the carrier device (63), wherein each light emitting point (67) comprises exactly one light emitting semiconductor component (23) which has an exit region (31) for light on at least one surface side (29), a functional layer (37, 69) above and / or next to the exit regions (31) of the plurality of light emitting points (67), in particular a conversion layer for converting light of the semiconductor components (23) into light having at least one other wavelength, an intermediate layer (55) arranged on the functional layer, a plurality of enclosures (39) for the functional layer (37, 69), wherein each surround (39) has a surround (45) running around in a circumferential direction (U), in the center of which a continuous opening (43) is provided, at least one cover layer (41) over the functional layer (37) and the surrounds (39), wherein the surrounds (39) are formed from a transparent material and are arranged or formed at least in the plane (35) of the functional layer (37, 69) in such a way that the center of a respective surround (39) is at least approximately above a respective luminous point (67) and the surround (45) surrounds a region (69) of the functional layer (37) above and / or next to the respective luminous point (67), wherein the region (69) of the functional layer (37) at least partially and preferably completely fills the opening (43) of the respective surround (39).Optoelectronic lighting device according to claim 10, characterised in that the enclosures (39) divide the functional layer (37) into individual regions (69) in a matrix-like manner in accordance with the matrix-like arrangement of the luminous points (67), wherein for each region (69) the centre of a respective enclosure (39) is at least approximately above a respective luminous point (67) and the enclosure (45) surrounds the region (69) of the functional layer (37) above the respective luminous point (67).Method for producing at least one optoelectronic lighting device or an optoelectronic lighting device, in particular a lighting device (21) according to one of Claims 1 to 9 or an optoelectronic lighting device (61) according to Claim 10 or 11, wherein the method comprises: providing a carrier device (63), wherein a plurality of lighting points (67) is arranged in a matrix-like manner on a top side (65) of the carrier device (63), wherein each lighting point (67) comprises at least one light-emitting semiconductor component (23), in particular exactly one light-emitting semiconductor component (23), which has an exit region (31) for light on at least one surface side (29), a functional layer (37) in a layer plane (35) above and / or next to the exit regions (31) of the plurality of lighting points (67), in particular, a conversion layer for converting light of the semiconductor components (23) into light having at least one different wavelength, and a plurality of enclosures (39) are provided, an intermediate layer (55) is provided on the functional layer (37), at least one cover layer (41) is provided over the functional layer (37) and the enclosures (39), wherein each enclosure (39) of the plurality of enclosures (39) has an enclosure (45) running around in a circumferential direction (U), in the center of which an opening (43) is provided, wherein the enclosures (39) are arranged or formed in such a way, the center of the border (45) of a respective border (39) is located at least approximately above a respective illuminated point (67) and the borders (39) divide the functional layer (37) into individual regions (69) above and / or next to the illuminated points (67), and wherein the borders (39) are formed from a transparent material.Method according to claim 12, characterised in that firstly the plurality of enclosures (39) is arranged or formed, in particular in the layer plane (35), and only then is the functional layer (37) formed, in particular in the openings (43) of the enclosures (39), or vice versa, in that firstly the functional layer (37) is formed and then the plurality of enclosures (39) is arranged or formed, in particular in the layer plane (35), in particular by pressing the plurality of enclosures (39) into the functional layer (37).Method according to claim 12 or 13, characterised in that the plurality of enclosures (39) is formed in a grid structure (71), in particular made of a transparent material.Method according to one of Claims 12 to 14, characterized in that the multiplicity of enclosures (39) is formed by applying a flowable material, in particular by means of a dispensing method, and the functional layer (37) is then formed.Method according to one of Claims 12 to 15, characterized in that the luminous points (67) of the plurality of luminous points are singulated by severing the carrier device (63) and the layers arranged thereon at planes (E) lying between the luminous points (67) and running perpendicular to the upper side (65) of the carrier device (63), wherein none of the planes (E) runs through the functional layer (37), but exclusively through the borders (39) or through an intermediate region between adjacent borders (39).Optoelectronic lighting device according to claim 1, characterised in that the semiconductor component (23) has an exit region for light on a side surface perpendicular to the carrier top side.Optoelectronic lighting device according to claim 1, characterised in that the lateral surfaces of the semiconductor part are surrounded by the filling layer.

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