Storage device, storage amount calculation method, and light source device

Abstract

To accurately calculate the amount of contents such as raw materials stored in a container.SOLUTION: A storage device according to one aspect of the present technology has a storage unit, a first temperature sensor, a temperature adjustment mechanism, and a calculation unit. The storage unit stores contents and has a side section. The first temperature sensor is disposed on a surface on the outer side of the side section. The temperature adjustment mechanism can maintain, at a predetermined temperature, the temperature of the contents stored in the storage unit. The calculation unit calculates the amount of the contents stored in the storage unit on the basis of the temperature detected by the first temperature sensor.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a storage device, a storage capacity calculation method, and a light source device including the storage device. [Background technology]

[0002] Traditionally, X-rays have been used for medical, industrial, and research purposes. In the medical field, X-rays are used for applications such as chest X-ray photography, dental X-ray photography, and CT (Computer Tomogram). In the industrial field, X-rays are used for applications such as non-destructive testing to observe the inside of materials such as structures and welds, and non-destructive tomographic testing. In the research field, X-rays are used for applications such as X-ray diffraction to analyze the crystal structure of materials, and X-ray spectroscopy (X-ray fluorescence analysis) to analyze the constituent elements of materials.

[0003] Extreme ultraviolet light (hereinafter also referred to as "EUV (Extreme Ultra Violet) light") with a wavelength of 13.5 nm, which is in the soft X-ray region with a relatively long wavelength among X-rays, has been used as exposure light in recent years. Here, the base material of a mask for EUV lithography in which a fine pattern is formed is a reflective mirror having a laminated structure in which a multilayer film (e.g., molybdenum and silicon) for reflecting EUV light is provided on a substrate made of low thermal expansion glass. An EUV mask is formed by patterning a material that absorbs radiation with a wavelength of 13.5 nm on the multilayer film.

[0004] In addition, the size of unacceptable defects in EUV masks is significantly smaller than that of conventional ArF masks, making them difficult to detect. Therefore, EUV masks are usually inspected using what is called actinic inspection, which uses radiation with a wavelength that matches the working wavelength of lithography. For example, when inspection is performed using radiation with a wavelength of 13.5 nm, it is possible to detect defects with a resolution smaller than the wavelength.

[0005] Generally, EUV light source devices include a discharge produced plasma (DPP) light source device, a laser assisted discharge produced plasma (LDP) light source device, and a laser produced plasma (LPP) light source device.

[0006] The DPP light source device applies a high voltage between electrodes to which gaseous plasma raw material (discharge gas) containing EUV radiating species is supplied, generating high-density, high-temperature plasma through discharge, and utilizes the extreme ultraviolet light emitted from the plasma.

[0007] An LDP light source device is an improved version of a DPP light source device, and for example, it supplies liquid high-temperature plasma raw material (e.g., Sn (tin) or Li (lithium)) containing EUV radiating species to the surface of an electrode (discharge electrode) that generates a discharge, irradiates the raw material with an energy beam (e.g., an electron beam or laser beam) to vaporize the raw material, and then generates high-temperature plasma by discharge.

[0008] The LPP light source device excites an EUV radiating species with a laser beam, etc., to generate high-temperature plasma. A known light source device of this type is one that generates plasma by exciting a target material for EUV radiation, which is a droplet of tin (Sn) or lithium (Li) ejected in the form of minute droplets, by focusing a laser beam on the target material.

[0009] Patent Document 1 proposes a method of obtaining radiation by supplying a plasma raw material for generating radiation such as X-rays or EUV to a rotor and irradiating the area of ​​the rotor to which the plasma raw material is supplied with an energy beam (laser beam). A cylindrical container with one open end is used as the rotor, and liquid plasma raw material is supplied to this container, and laser light is irradiated onto the inner peripheral surface of the container.

[0010] This method corresponds to the so-called LPP method, but it supplies liquid plasma raw material to the energy beam irradiation area by the centrifugal force of a rotor, and does not require supplying liquid plasma raw material as droplets. Therefore, compared to methods such as focusing a laser beam on droplets, it is possible to obtain high-intensity radiation with a relatively simple configuration. [Prior art documents] [Patent documents]

[0011] [Patent Document 1] JP 2014-216286 A Summary of the Invention [Problem to be solved by the invention]

[0012] In a light source device such as that disclosed in Patent Document 1, there is a demand for a technique for accurately calculating the amount of a content, such as a raw material, contained in a container.

[0013] In view of the above circumstances, an object of the present invention is to provide a storage device, a storage capacity calculation method, and a light source device that enable the amount of contents stored in a container to be calculated accurately. [Means for solving the problem]

[0014] In order to achieve the above object, a storage device according to an embodiment of the present technology includes a storage unit, a first temperature sensor, a temperature adjustment mechanism, and a calculation unit. The container contains an object and has a side. The first temperature sensor is disposed on an exterior surface of the side portion. The temperature adjustment mechanism is capable of maintaining the temperature of the contents contained in the container at a predetermined temperature. The calculation unit calculates the amount of the content contained in the container based on the temperature detected by the first temperature sensor.

[0015] In this storage device, a first temperature sensor is disposed on the outer surface of the side of the storage unit, and the amount of the contents stored in the storage unit is calculated based on the temperature detected by the first temperature sensor, which makes it possible to accurately calculate the amount of the contents stored in the storage unit.

[0016] The calculation unit may calculate the amount of the content based on a difference between a predetermined initial temperature and the temperature detected by the first temperature sensor.

[0017] The calculation unit may calculate the amount of the content by the following formula:

number

[0018] The value of T0 may be 100° C. or more.

[0019] Said T x and the value of T0 may differ by 100° C. or less.

[0020] The calculation unit may calculate the amount of the contents based on the temperature detected by the first temperature sensor and a predefined correspondence relationship between temperature and the amount of the contents.

[0021] The calculation unit may calculate a height of a surface of the content contained in the container.

[0022] The first temperature sensor may be disposed above the temperature adjustment mechanism.

[0023] The first temperature sensor may be disposed above a center of the housing portion.

[0024] The first temperature sensor may be disposed at an upper end of a side portion of the housing portion.

[0025] The temperature adjustment mechanism may be disposed below the center of the storage portion.

[0026] The container may have a bottom, in which case the temperature adjustment mechanism may be disposed at the bottom of the container.

[0027] A rotating body may be immersed in the content contained in the container.

[0028] The container may be provided with a supply port for supplying the content to the container, in which case the first temperature sensor may be disposed at the same height as or above the supply port.

[0029] The container may be provided with a supply port for supplying the contents to the container, in which case the temperature adjustment mechanism may be disposed at the same height as or below the supply port.

[0030] The first temperature sensor may be a plurality of the first temperature sensors.

[0031] The temperature adjustment mechanism may include a heating mechanism for heating the contents contained in the container, and a second temperature sensor. In this case, the heating mechanism may maintain the temperature of the contents at a predetermined temperature by heating the contents based on the temperature detected by the second temperature sensor.

[0032] The second temperature sensor may be disposed above the heating mechanism.

[0033] A first pipe for allowing the contents to flow in from the outside and a second pipe for allowing the contents to flow out to the outside may be connected to the storage section, and a third pipe for supplying the contents to the storage section may be inserted from above.

[0034] The third pipe may have a valve for controlling the movement of the content. In this case, another of the storage units may be connected to the third pipe.

[0035] At least one of the first line, the second line, and the third line may include a pump for moving the contents.

[0036] The side portion may be made of ceramic, stainless steel, or silicon.

[0037] The side portion may have a thickness of between 1 mm and 20 mm.

[0038] The side portion has a thermal conductivity of 10 W / (m×k) or more and 200 W / (m×k) or less at 300 K.

[0039] The side portion may be formed of a first member and a second member having a higher thermal conductivity than the first member, in which case the first temperature sensor may be disposed on the second member.

[0040] The side portion may have a dual structure including an outer member, an inner member, and an internal space defined between the outer member and the inner member.

[0041] The internal space may communicate with the interior of the storage portion at an upper side.

[0042] The content may be a liquid ingredient.

[0043] The liquid source may be tin, lithium, gadolinium, gallium, bismuth, indium, or an alloy containing at least one of these materials.

[0044] The content may be a powdered raw material.

[0045] A storage capacity calculation method according to one embodiment of the present technology is provided in a storage device including a storage section that stores contents and has a side, a first temperature sensor arranged on an exterior surface of the side, and a temperature adjustment mechanism that can maintain the temperature of the contents stored in the storage section at a predetermined temperature, and calculates the amount of the contents stored in the storage section based on the temperature detected by the first temperature sensor.

[0046] The first temperature sensor may detect the temperature in a state where the flow of the content inside the storage portion is stopped.

[0047] A light source device according to one embodiment of the present technology is a light source device that generates radiation by converting a raw material into plasma using irradiation with an energy beam, and includes a storage section that stores the raw material and has a side, a first temperature sensor that is arranged on an outer surface of the side, a temperature adjustment mechanism that is capable of maintaining the temperature of the raw material stored in the storage section at a predetermined temperature, and a calculation section that calculates the amount of the raw material stored in the storage section based on the temperature detected by the first temperature sensor. Effect of the Invention

[0048] According to the present invention, it is possible to accurately calculate the amount of the contents, such as raw materials, contained in a container. Note that the effects described here are not necessarily limited, and may be any of the effects described in the present disclosure. [Brief description of the drawings]

[0049] [Figure 1] 1 is a schematic diagram showing an example of the configuration of a light source device according to a first embodiment of the present invention. [Diagram 2] 2 is a schematic diagram showing a configuration example of a plasma generating mechanism, a raw material supplying device, and a storage unit. FIG. [Diagram 3] FIG. 4 is a cross-sectional view showing an example of the configuration of a storage section. [Figure 4] FIG. 1 is a schematic diagram showing an experimental reservoir. [Diagram 5]4 is a graph showing the relationship between the amount of plasma raw material and the temperature detected by a temperature sensor. [Figure 6] FIG. 13 is a schematic diagram showing an example of the configuration of a double-structure storage section. [Figure 7] FIG. 13 is a schematic diagram showing an example of the configuration of a double-structure storage section. [Figure 8] FIG. 2 is a schematic diagram showing a configuration example of a plasma generation mechanism. [Figure 9] 10A to 10C are schematic diagrams showing variations in the arrangement of a temperature sensor and a heater. [Figure 10] 10A to 10C are schematic diagrams showing variations in the arrangement of a temperature sensor and a heater. [Figure 11] FIG. 2 is a schematic diagram showing a configuration example of a raw material supplying device. [Figure 12] FIG. 1 is a schematic diagram showing an example of the configuration of a plasma generation mechanism capable of recycling plasma raw material. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0050] Hereinafter, embodiments of the present technology will be described with reference to the drawings.

[0051] <First embodiment> [Basic configuration of light source device] FIG. 1 is a schematic diagram showing an example of the configuration of a light source device according to a first embodiment of the present invention. The light source device 100 is an LPP type light source device. That is, the light source device 100 is a light source device that converts the plasma raw material 1 into plasma by irradiating it with an energy beam EB, and extracts the radiation R. In this disclosure, radiation R includes light (electromagnetic waves) emitted from plasma P, such as light in the soft X-ray region, such as EUV light, and hard X-rays with higher energy.

[0052] When EUV light is emitted as the radiation R, an EUV raw material is used as the plasma raw material 1. As a raw material for emitting EUV light, for example, liquid tin (Sn) or lithium (Li) is used. Sn and Li are solid at room temperature, but when irradiated with the energy beam EB, they are used in a liquid state. When X-rays are emitted as the radiation R, an X-ray raw material is used as the plasma raw material 1. The X-ray raw material is, for example, a metal that is liquid at room temperature, and examples of the X-ray raw material that can be used include gallium (Ga), a gallium alloy, and an Sn compound. The plasma raw material 1 corresponds to one embodiment of the contents and liquid raw material according to the present technology.

[0053] FIG. 1 is a schematic cross-section of light source device 100 taken along the horizontal direction at a position at a predetermined height from the installation surface, viewed from above. In FIG. 1, in order to facilitate understanding of the configuration and operation of the light source device 100, cross-sections of parts for which explanation of the cross-sectional configuration and the like is not required are omitted. In the following description, the X direction may be the left-right direction (the positive side of the X axis is the right side, and the negative side is the left side), the Y direction may be the front-rear direction (the positive side of the Y axis is the front side, and the negative side is the rear side), and the Z direction may be the height direction (the positive side of the Z axis is the upper side, and the negative side is the lower side). Of course, the application of this technology is not limited to the orientation in which the light source device 100 is used.

[0054] The light source device 100 includes a housing 2, a vacuum chamber 3, an energy beam entrance chamber 4, a radiation exit chamber 5, a plasma generation mechanism 6, a control unit 7, and a raw material supply device 30. In addition, in Fig. 1, the raw material supply device 30 is diagrammatically illustrated by a dashed line frame.

[0055] 1, the housing 2 is configured so that its outer shape is roughly cubic. Note that the shape of the housing 2 is not limited to a cubic shape, and any three-dimensional shape may be used. The housing 2 has an emission hole 2a formed in the front surface, an incidence hole 2b formed in the right side surface, a through hole 2c formed in the rear surface, and a through hole 2d formed in the left side surface. The material of the housing 2 is not limited, and for example, a metal housing is used.

[0056] In this embodiment, an emission axis EA of radiation R is set to pass through the emission hole 2a on the front surface and extend in the Y direction (front-rear direction). Radiation R, such as X-rays or EUV light, is extracted along the emission axis EA and emitted forward from the emission hole 2a. In this embodiment, the incidence axis IA of the energy beam EB is set so as to extend obliquely leftward toward the rear side from the incidence hole 2b on the right side surface. 1, a beam source 8 that emits an energy beam EB is provided outside the housing 2. The beam source 8 is provided such that the energy beam EB is incident on the inside of the housing 2 along an incident axis IA. An electron beam or a laser beam can be used as the energy beam EB. The beam source 8 may be configured in any manner that is capable of emitting the energy beam EB.

[0057] The light source device 100 is provided with a chamber section C including a plurality of chambers. Specifically, the chamber section C has a vacuum chamber 3, an energy beam incident chamber (hereinafter simply referred to as an incident chamber) 4, and a radiation exit chamber (hereinafter simply referred to as an exit chamber) 5. The vacuum chamber 3, the incident chamber 4, and the exit chamber 5 are spatially connected to one another. That is, the vacuum chamber 3 and the incident chamber 4 are connected to one another. Similarly, the vacuum chamber 3 and the exit chamber 5 are connected to one another.

[0058] The entrance chamber 4 is formed so as to be located on an entrance axis IA of the energy beam EB, and the exit chamber 5 is formed so as to be located on an exit axis EA of the radiation R. In addition, in the vacuum chamber 3, a mechanism for generating plasma P is provided.

[0059] In this embodiment, the chamber section C (vacuum chamber 3, entrance chamber 4, and exit chamber 5) is constituted by a chamber main body 9, an outer protrusion 9a protruding forward from the front surface of the chamber main body 9, and two inner protrusions 9b and 9c protruding inward from the inner surface of the chamber main body 9. The chamber body 9, the outer protrusion 9a, and the two inner protrusions 9b and 9c that constitute the chamber section C are made of a metal material.

[0060] The chamber main body 9 is configured so that the outer shape is roughly a rectangular parallelepiped, and is disposed so that its front, rear, left and right faces face the front, rear, left and right faces of the housing 2, respectively. Further, the chamber body 9 is disposed so that the right front corner between the front surface and the right side surface is positioned on the incidence axis IA of the energy beam EB.

[0061] 1, an exit hole 9d is formed in the front surface of the chamber body 9. The exit hole 9d is formed at a position aligned with the exit hole 2a in the front surface of the housing 2 on the exit axis EA of the radiation R. An outer protrusion 9a is configured to protrude forward from the periphery of the emission hole 9d of the chamber body 9. The outer protrusion 9a is configured to protrude farther forward than the emission hole 2a of the housing 2 so as to be inscribed in the emission hole 2a of the housing 2. Furthermore, an inner protrusion 9b is configured so as to protrude inward from the periphery of the emission hole 9d on the inner side of the chamber body 9. Note that the configuration of the inner protrusion 9b is not essential, and only the outer protrusion 9a may be provided in the chamber part C. The space surrounded by the outer protrusion 9a and the inner protrusion 9b functions as the emission chamber 5. The outer protrusion 9a and the inner protrusion 9b themselves, which are members constituting the emission chamber 5, can also be called the emission chamber. The outer protrusion 9a and the inner protrusion 9b may be integrally formed with the chamber body 9, or may be formed separately and then connected to the chamber body 9.

[0062] The exit chamber 5 is configured to have a cone shape with the exit axis EA of the radiation R as its central axis. The exit chamber 5 is configured to have a large cross-sectional area at the center in the direction of the exit axis EA of the radiation R, and the cross-sectional area becomes smaller toward the front and rear ends. In other words, the exit chamber 5 has a shape that narrows toward the front and rear ends. In addition, the exit chamber 5 is provided with openings (apertures) at the front and rear ends to pass the radiation R.

[0063] A utilization device such as a mask inspection device is connected to the front end of the emission chamber 5 (the front end of the outer protrusion 9a). In the example shown in FIG. 1, an application chamber 10 is connected as a chamber forming part of the utilization device. The pressure inside the application chamber 10 may be atmospheric pressure. Furthermore, the inside of the application chamber 10 may be purged by introducing a gas (e.g., an inert gas) from a gas injection path as necessary. Furthermore, the gas inside the application chamber 10 may be exhausted by an exhaust means not shown.

[0064] A filter film 11 is provided between the emission chamber 5 and the application chamber 10 to physically separate the region where the plasma P is generated from the application chamber 10. The filter film 11 is configured with a structure that allows radiation to pass through, and prevents the plasma raw material 1 and debris that are scattered as the plasma P is generated from entering the application chamber 10.

[0065] A collector (collecting mirror) 12 is disposed inside the exit chamber 5 for guiding and collecting the radiation R that has entered the exit chamber 5 into a utilization device (inside the application chamber 10). In Fig. 1, the components of the radiation R that enters the exit chamber 5 and is collected are shown by hatching.

[0066] Furthermore, a shielding member (central obscuration) 13 is disposed inside the emission chamber 5. The shielding member 13 is disposed on the emission axis EA of the radiation R so as to be aligned with the emission hole 9d of the chamber body 9, the emission hole 2a of the housing 2, and the filter film 11. In this embodiment, the shielding member 13 can block radiation components that are not collected by the collector 12. Note that the shielding member 13 does not necessarily have to be provided.

[0067] An entrance window 14 is formed in the right front corner of the chamber body 9. The entrance window 14 is formed at a position aligned with the entrance hole 2b on the right side surface of the housing 2 on the entrance axis IA of the energy beam EB. Furthermore, an inner protrusion 9c is configured on the inner side of the right front corner of the chamber body 9 so as to protrude from a position surrounding the entrance window 14 along the direction of the entrance axis IA of the energy beam EB. Of the internal space of chamber body 9, the space surrounded by inner protrusion 9c functions as incident chamber 4. Inner protrusion 9c and the front right corner portion of chamber body 9, which constitute incident chamber 4, can themselves be called the incident chamber. The inner protrusion 9c may be formed integrally with the chamber body 9, or may be formed separately and then connected to the chamber body 9.

[0068] The incidence chamber 4 is configured to have a cone shape with the incidence axis IA of the energy beam EB as its central axis. The incidence chamber 4 is configured so that the cross-sectional area becomes smaller toward the inner end of the chamber body 9 in the direction of the incidence axis IA of the energy beam EB. In other words, the incidence chamber 4 has a shape that narrows toward the inner end. In addition, the incidence chamber 4 is provided with an opening (aperture) at the inner end through which the energy beam EB passes.

[0069] A capture mechanism for capturing the scattered plasma raw material 1 and debris is disposed inside the injection chamber 4. In the example shown in Fig. 1, a rotary window 15, which is a plate-shaped rotating member that transmits the energy beam EB and captures the plasma raw material 1 and debris, is disposed as the capture mechanism. By rotating the rotary window 15, the effective area of ​​the beam transmission region of the rotary window 15 is increased, making it possible to reduce the frequency with which the rotary window 15 needs to be replaced.

[0070] 1, the emission chamber 5 and the incidence chamber 4 are provided with gas injection paths 16a and 16b, respectively, and gas is supplied to the inside of the emission chamber 5 and the incidence chamber 4 from a gas supply device (not shown). The emission chamber 5 is supplied with a gas having a high transmittance for the radiation R. The incidence chamber 4 is supplied with a gas having a high transmittance for the energy beam EB.

[0071] The gases supplied to the emission chamber 5 and the incidence chamber 4 may be the same or different. For example, argon or helium can be used as gases having high transmittance for both the energy beam EB and the radiation R. Besides, the type of gas supplied to the emission chamber 5 and the incidence chamber 4 is not limited. By supplying gas, the internal pressure of the emission chamber 5 and the incidence chamber 4 can be set to a pressure higher than the internal pressure of the vacuum chamber 3, making it possible to suppress the intrusion of debris and the like.

[0072] Of the internal space of the chamber body 9, the space excluding the internal space of the inner protrusion 9b functioning as the emission chamber 5 and the internal space of the inner protrusion 9c functioning as the incidence chamber 4 functions as the vacuum chamber 3. The part that constitutes the vacuum chamber 3 itself can also be called the vacuum chamber.

[0073] 1, the chamber body 9 has a portion that protrudes from the housing 2 to the outside through a through hole 2d on the left side surface of the housing 2, and its tip is connected to an exhaust pump 17. The specific configuration of the exhaust pump 17 is not limited, and any pump such as a vacuum pump may be used. The vacuum chamber 3 is evacuated by the exhaust pump 17, and the pressure in the vacuum chamber 3 is reduced. This suppresses the attenuation of the radiation R generated in the vacuum chamber 3. The inside of the vacuum chamber 3 does not necessarily have to be a vacuum atmosphere as long as it is a reduced pressure atmosphere relative to the entrance chamber 4 and the exit chamber 5. Also, an inert gas may be supplied into the vacuum chamber 3.

[0074] In this embodiment, a gas nozzle 18 is installed so as to extend in the left-right direction toward the region between the entrance axis IA and the exit axis EA. The gas nozzle 18 is installed on the right side surface of the chamber body 9 via a seal member or the like. The gas nozzle 18 is connected to a gas supply device (not shown) and supplies gas into the chamber body 9. Note that the configuration of the gas nozzle 18 is not essential, and gas may be supplied without passing through a gas nozzle. 1, gas is sprayed from the gas nozzle 18 from the right side of the region between the entrance axis IA and the exit axis EA to the left along the left-right direction. This makes it possible to move debris emitted from the plasma P in a direction away from the entrance axis IA and the exit axis EA.

[0075] The plasma generation mechanism 6 is a mechanism for generating plasma P in the vacuum chamber 3 and emitting radiation R (X-rays, EUV light). The plasma generation mechanism 6 includes a disk-shaped rotor 20 for supplying raw material, and a raw material container 21 for accommodating the liquid plasma raw material 1. The rotor 20 and the raw material container 21 are disposed inside the vacuum chamber 3.

[0076] 1, an energy beam EB is incident on a disk-shaped rotating body 20. The rotating body 20 is disposed in a vacuum chamber 3 such that an irradiation position I of the energy beam EB is located at the intersection of an entrance axis IA and an exit axis EA. Note that the shape of the rotating body is not limited to a disk shape, and for example, a polygonal rotating body may be used.

[0077] The raw material container 21 is provided so that the rotor 20 is immersed therein, and supplies liquid plasma raw material 1 to the rotor 20. For example, the rotor 20 is held rotatably while immersed in the liquid plasma raw material 1 in the raw material container 21, and the plasma raw material 1 adheres to the surface of the rotor 20. As the rotor 20 rotates in this state, the plasma raw material 1 is supplied to the irradiation position I of the rotor 20. Then, an energy beam EB is incident on the irradiation position I of the rotor 20, and a plasma P is generated.

[0078] In this way, raw material container 21 is provided within vacuum chamber 3, stores liquid plasma raw material 1, and supplies liquid plasma raw material 1 to irradiation position I of energy beam EB. Other details of the configuration of plasma generation mechanism 6 will be described later in detail.

[0079] The control unit 7 controls the operation of each of the components of the light source device 100 . For example, the control unit 7 controls the operations of the beam source 8 and the exhaust pump 17. The control unit 7 also controls the operations of various motors, the raw material supply device 30, and the like, which will be described later. The control unit 7 has hardware circuits necessary for a computer, such as a CPU, memory (RAM, ROM), etc. The CPU loads a control program stored in the memory into the RAM and executes it, thereby performing various processes. The control unit 7 may be implemented by a programmable logic device (PLD) such as a field programmable gate array (FPGA) or other device such as an application specific integrated circuit (ASIC). In FIG. 1, the control unit 7 is illustrated diagrammatically as a functional block, but the position where the control unit 7 is constructed may be designed arbitrarily.

[0080] 1, in this embodiment, a radiological diagnostic section 19 is configured in a region on the front side of the chamber body 9 that is spatially connected to the vacuum chamber 3. The radiological diagnostic section 19 is configured at a position where radiation R, which is emitted in a direction different from the emission axis EA of the radiation R, is incident. The radiation diagnostic unit 19 measures the state of radiation R from the plasma P. Here, the state of radiation R refers to the physical state of radiation R, such as the intensity, wavelength, and spectrum of radiation R. For example, the radiation diagnostic unit 19 is configured by a detector that detects the presence or absence of radiation R and a measuring device that measures the output of radiation. The measurement results obtained by the radiation diagnostic section 19 are used for diagnosis of radiation R and for controlling the operation of the raw material supply device 30, which will be described below.

[0081] The raw material supply device 30 supplies the plasma raw material 1 into the raw material container 21. There are no limitations on the timing at which the raw material supply device 30 supplies the plasma raw material 1. The specific configuration of the raw material supply device 30 will be described in detail later.

[0082] [Plasma generation mechanism, etc.] Fig. 2 is a schematic diagram showing a configuration example of the plasma generation mechanism 6, the raw material supply device 30, and the storage unit 40. Fig. 2 shows the plasma generation mechanism 6 of Fig. 1 as viewed from the direction of arrow A (positive side of the Y direction). The raw material supply device 30 and the storage unit 40 are connected to the plasma generation mechanism 6. Note that in Fig. 1, the raw material supply device 30 is illustrated in a dashed frame, and the illustration of the storage unit 40 is omitted.

[0083] 2, the raw material supply device 30 comprises a container for storing the plasma raw material 1, a pipe connected to the container, a pump attached to the pipe, and a pipe inserted into the container from above. The pipe connected to the container is further connected to the raw material container 21 of the plasma generation mechanism 6. In this way, the plasma raw material 1 is supplied to the raw material container 21.

[0084] Since the rotor 20 is immersed in the plasma raw material 1 in the raw material container 21, the rotation of the rotor 20 lifts up the plasma raw material 1 while it is attached to the rotor 20. Furthermore, the attached plasma raw material 1 is irradiated with an energy beam EB from a beam source 8. The energy beam EB is diagrammatically shown by an arrow in Figure 2.

[0085] At irradiation position I, some of the plasma raw material 1 may scatter without being converted into plasma. The scattered plasma raw material 1 falls to the bottom of raw material container 21 as shown in Figure 2. A reservoir 40 is connected to the bottom of the plasma generation mechanism 6, and the fallen plasma raw material 1 accumulates in reservoir 40. Plasma raw material 1 may also leak from raw material container 21, and this plasma raw material 1 also accumulates in reservoir 40.

[0086] [Storage section] 3 is a cross-sectional view showing an example of the configuration of storage unit 40. Storage unit 40 is a roughly cylindrical container. Fig. 3 shows a cross section taken along the XZ plane at the center of storage unit 40. Also shown is the state in which plasma raw material 1 is stored in storage unit 40. Storage unit 40 has top 43, side 44, and bottom 45.

[0087] The upper part 43 has a disk shape and has an opening at the center that protrudes toward the positive side in the Z direction. An opening of the same shape is also formed in the chamber body 9, and the upper part 43 is connected to the chamber body 9 so that the opening of the chamber body 9 and the opening of the upper part 43 coincide with each other. The diameter of each opening and the specific connection form of the upper part 43 and the chamber body 9 are not limited.

[0088] The side portion 44 has a cylindrical shape. The diameter of the side portion 44 is the same as the diameter of the upper portion 43, and the upper end of the side portion 44 is connected to the lower surface of the upper portion 43. The bottom portion 45 has a disk shape. The diameter of the bottom portion 45 is the same as the diameter of the side portion 44, and the upper surface of the bottom portion 45 is connected to the lower end of the side portion 44. The specific shape of the storage portion 40 is not limited. For example, any shape that can be realized by the present technology, such as a spherical shape or a prismatic shape, can be adopted. The storage section 40 corresponds to one embodiment of a storage section according to the present technology.

[0089] In this embodiment, a temperature sensor 46, a heater 47, and an information processing device 48 are connected to the storage section 40. The temperature sensor 46 is, for example, a sensor such as a thermocouple or a platinum resistance temperature detector (PT100). Of course, the specific type of the temperature sensor 46 is not limited. Although the temperature sensor 46 is illustrated in FIG. 3 as being rod-shaped, the specific shape of the temperature sensor 46 is not limited.

[0090] Temperature sensor 46 is disposed on the outer surface of side portion 44. The inside of storage portion 40 is the space in which plasma raw material 1 is stored, and the outside is the space on the opposite side. As shown in Fig. 3, temperature sensor 46 is disposed on the left side of side portion 44 so as to abut against the outer (left) surface.

[0091] Furthermore, in this example, the temperature sensor 46 is disposed above the center of the storage section 40. The center means the center in the Z direction (vertical direction) of the side section 44, and the temperature sensor 46 is disposed above that. Alternatively, the center may mean the center in the vertical direction when the side section 44 and the upper section 43 are viewed together. In this case, the temperature sensor 46 is still disposed above the center. Of course, this is not limited to this, and the temperature sensor 46 may be disposed below the center, and the specific location of the arrangement is not limited. The temperature sensor 46 corresponds to an embodiment of a first temperature sensor according to the present technology.

[0092] The heater 47 is, for example, a resistance heating type electric heater. Alternatively, any heating mechanism may be used, such as a heating device using induction heating (IH), an infrared lamp such as a halogen lamp, or a heat transfer oil circulator.

[0093] In this example, the heater 47 has a rod shape and is disposed on the bottom 45 of the storage section 40. Specifically, the heaters 47 are arranged side by side along the Y direction (depth direction) so as to extend in the X direction (left-right direction) and are disposed in contact with the lower surface of the bottom 45. Of course, the specific shape and arrangement of the heater 47 are not limited to this. For example, the heater 47 may be disk-shaped and be in contact with one side of the lower surface of the bottom 45.

[0094] If the temperature of the plasma raw material 1 in the reservoir 40 is low, the plasma raw material 1 will solidify and grow like a limestone cavern, which may interfere with the operation of the light source device 100. For this reason, the plasma raw material 1 must always be in a liquid phase.

[0095] The liquid surface of the plasma raw material 1 contacts the space inside storage part 40, and during operation the pressure in this space is low at a few Pa, so there is little conducted heat flow, but thermal energy is released by radiation, and the temperature of the plasma raw material 1 drops by the amount of this release. Also, at side 44, there is little thermal energy released by radiation, but because the plasma raw material 1 is in contact with side 44, heat flow and thermal conduction occur at side 44, causing a drop in the temperature of the plasma raw material 1.

[0096] For this reason, it is necessary to heat the plasma raw material 1 by the heater 47 as in this embodiment. The heater 47 corresponds to an embodiment of a temperature adjustment mechanism according to the present embodiment.

[0097] The information processing device 48 is, for example, a computer such as a PC (Personal Computer). Any other computer may be used. The information processing device 48 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), a storage unit, and the like.

[0098] The information processing device 48 has a controller 49. The controller 49 has hardware circuits necessary for a computer, such as a CPU and memory (RAM, ROM). The CPU executes a program related to the present technology stored in a storage unit or memory, thereby executing various processes related to the present technology. As the controller 49, for example, a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array) or other devices such as an ASIC (Application Specific Integrated Circuit) are used.

[0099] In this embodiment, the CPU of the controller 49 executes a program (e.g., an application program) according to the present technology, thereby realizing a control unit 7 and a calculation unit 51 as functional blocks. These functional blocks execute the capacity calculation method according to the present embodiment. Note that in order to realize each functional block, dedicated hardware such as an IC (integrated circuit) may be used as appropriate.

[0100] The control unit 7 controls the operation of the temperature sensor 46 and the heater 47. For example, it controls whether or not heating is performed by the heater 47, and the heating output. In this embodiment, the control unit 7 controls the heater 47 to heat at a constant output. This maintains the temperature of the plasma raw material 1 stored in the storage unit 40 at a predetermined temperature. The control unit 7 may also be capable of controlling the operation of any other mechanism. The calculation unit 51 calculates the amount of plasma raw material 1 stored in the storage unit 40. The specific control content by the control unit 7 and the specific calculation method by the calculation unit 51 will be described later.

[0101] The information processing device 48 also has a communication unit (not shown). The communication unit is a communication module for communicating with other devices via a network such as a LAN (Local Area Network) or a WAN (Wide Area Network). A communication module for short-range wireless communication such as Bluetooth (registered trademark) may be provided. A communication device such as a modem or a router may also be used. This allows communication between the information processing device 48 and the temperature sensor 46 or heater 47, making it possible to control various mechanisms and obtain information. Note that wired communication may also be used. The specific configuration of the information processing device 48 is not otherwise limited. The storage unit 40, the temperature sensor 46, the heater 47, and the calculation unit 51 correspond to one embodiment of a storage device according to the present technology.

[0102] [Calculation section] The specific calculations made by calculation unit 51 will be described below. In this example, first the temperature is detected by temperature sensor 46. Specifically, temperature sensor 46 is located in side portion 44, and so detects the temperature of that portion of side portion 44 where it is located. Because heat from heater 47 and plasma raw material 1 is conducted to side portion 44, the detected temperature varies depending on the state of heater 47 and plasma raw material 1.

[0103] Here, the side portion 44 is structured to conduct heat in one direction (upward), and a heat flow energy of Q occurs per unit area from the plasma raw material 1 in the storage portion 40 or from the bottom 45, and heat conduction occurs in this one direction. At this time, the plasma raw material 1 has a temperature gradient T x -T0 occurs. For example, when the liquid level of plasma raw material 1 is low, the temperature sensor 46 is far away from the liquid level, so the temperature detected by temperature sensor 46 is much lower than the temperature of plasma raw material 1. On the other hand, when the liquid level is high, the temperature sensor 46 is close to the liquid level, so the detected temperature does not drop as much compared to the temperature of plasma raw material 1.

[0104] In this way, the detected temperature changes according to the height of the liquid surface. However, since the thermal conductivity differs depending on the temperature, it is known that the temperature gradient is generally not linear.

[0105] Here, the inventors consider that T0 is relatively high and T0 and T x It was found that if the temperature gradient is small, the change in thermal conductivity is small, and the heat changes almost linearly in the direction of conduction. This makes it possible to calculate the amount of plasma raw material 1 based on the gradient of this system and the measurement value of temperature sensor 46.

[0106] In order to verify the above-mentioned idea, the inventors have created a reservoir 54 for experiments. FIG. 4 is a schematic diagram showing the reservoir 54 for experiments. The reservoir 54 is a cylindrical container, and most of the side is a side 55 having a double structure of thin stainless steel. The upper part of the double structure of the side 55 is open, and the inside of the double structure is connected to the inside of the chamber body 9. As a result, the inside of the double structure is evacuated during operation. In addition, a part of the side is a side 56 that extends in the vertical direction and has a normal structure (not a double structure) of stainless steel. A temperature sensor 46 is arranged above the center of the side 56. Although not shown, a heater 47 is arranged at the bottom of the reservoir 54.

[0107] The liquid level is shown diagrammatically by a dashed line in Figure 4. In the experiment, first, at a predetermined initial liquid level height (lower dashed line), the temperature detected by temperature sensor 46 was measured as a predetermined initial temperature. Furthermore, the amount (volume) of plasma raw material 1 was calculated as the initial amount based on the liquid level height and the shape of reservoir 54, and the initial amount and initial temperature were recorded.

[0108] Furthermore, the height of the liquid level was changed, and the detected temperature was measured when the liquid level was at a height Δx (upper dashed line). The relationship between the amount calculated from the liquid level height and the temperature was recorded for each temperature.

[0109] Specifically, plasma raw material 1 was heated in a container in a separate chamber connected to reservoir 54, and then the container was tilted to titrate plasma raw material 1 into reservoir 54. The vacuum was then broken once, and the container was removed in the atmosphere. The amount of plasma raw material 1 in reservoir 54 was calculated by measuring the distance between the position of the top surface of the container and the liquid level of plasma raw material 1.

[0110] Fig. 5 is a graph showing the relationship between the amount of plasma raw material 1 and the temperature detected by temperature sensor 46. Fig. 5 shows the results of an experiment using reservoir 54. The horizontal axis shows the amount of plasma raw material 1 (A is a certain unit volume), and the vertical axis shows the temperature detected by temperature sensor 46.

[0111] As shown in FIG. 5, the detected temperature at a predetermined initial amount (0) is approximately 150°C. The detected temperature at amount A is approximately 156°C. The detected temperature at amount 5A is approximately 190°C. Note that amount 5A is the amount of plasma raw material 1 when the liquid level reaches the height of temperature sensor 46. Although not shown in the figure, when the liquid level is 5A or above, the detected temperature will not rise above 190°C. This is because the plasma raw material 1 is always present at the position of temperature sensor 46, so no temperature gradient is created.

[0112] In this way, the relationship between the amount and the detected temperature is generally linear (dashed straight line) although there is some variation. In other words, the following relationship holds:

number

[0113] In this example, the initial temperature T0 is 150°C. The detected temperature at V=5A is T x = 190°C, it is possible to determine the coefficient k by substituting these values. That is,

number

[0114] As can be seen from these results, when the relationship between the quantity and the detected temperature is linear, it is possible to calculate the corresponding quantity for any subsequent detected temperature by simply obtaining two pieces of information: the initial temperature at the initial quantity and the detected temperature at a certain quantity.

[0115] In this embodiment, the value of T0 is set to, for example, 100° C. or higher. By heating the plasma raw material 1 so that the initial temperature T0 detected by the temperature sensor 46 is 100° C. or higher, it is possible to ensure that the plasma raw material 1 is in a molten state. x The difference between the value of T and the value of T0 is set to 100° C. or less. In this case, it is possible to reliably bring the plasma raw material 1 into a molten state. Of course, T x The specific values ​​of T0 are not limited to these.

[0116] Calculation unit 51 calculates the amount of plasma raw material 1 using (Equation 1). Specifically, the temperature detected by temperature sensor 46 is acquired by the communication unit of information processing device 48. Calculation unit 51 calculates the amount of plasma raw material 1 by substituting the acquired temperature into (Equation 1).

[0117] In this example, the volume is calculated as the amount of plasma raw material 1, but the type of amount calculated is not limited to this. For example, calculation unit 51 may calculate the surface height (liquid level height) of plasma raw material 1 stored in storage unit 54. For example, the liquid level height can be calculated by multiplying the calculated volume by a predetermined coefficient that depends on the shape of storage unit 54. Alternatively, mass may be calculated. In this case, the mass can be calculated by multiplying the calculated volume by the density of plasma raw material 1. Any other amount may be calculated.

[0118] In this way, calculation section 51 calculates the amount of plasma raw material 1 based on the difference between a predetermined initial temperature and the temperature detected by temperature sensor 46. Calculation using (Equation 1) is included in calculations based on this difference. Without being limited to this, the amount of plasma raw material 1 may be calculated using any calculation method based on the difference. For example, an equation other than (Equation 1) that includes a difference may be used.

[0119] Furthermore, calculation section 51 calculates the amount of plasma raw material 1 based on the temperature detected by temperature sensor 46. Calculations based on the detected temperature include calculations based on the difference and calculations using (Equation 1). However, the calculations are not limited to these, and the amount of plasma raw material 1 may be calculated using any calculation method based on the detected temperature.

[0120] For example, calculation unit 51 may calculate the amount of plasma raw material 1 based on the temperature detected by temperature sensor 46 and a predefined correspondence relationship between the temperature and the amount of plasma raw material 1. Specifically, before light source device 100 is used (at the time of manufacture, etc.), the correspondence relationships between each detected temperature and amount are recorded in advance. For example, each correspondence relationship is found by actually conducting an experiment using storage unit 40, and a group of correspondence relationships is generated as a chart as shown in FIG. 5. The generated chart is stored in the memory of information processing device 48, for example, and is read out when calculation unit 51 performs calculations. Note that the correspondence relationships may also be found by simulation rather than by actual experiments.

[0121] Alternatively, the group of correspondence relationships may be generated in other formats such as a table. There is also no limit to the number of correspondence relationships used, and the correspondence relationships may be generated in any grid, such as in increments of 1°C or 5°C. The correspondence relationships may also be defined by interpolation.

[0122] As described above, in light source device 100 according to this embodiment, a temperature sensor is placed on the external surface of side portion 44 of storage portion 40, and the amount of plasma raw material 1 stored in storage portion 40 is calculated based on the temperature detected by temperature sensor 46. This makes it possible to accurately calculate the amount of plasma raw material 1 stored in storage portion 40.

[0123] In an EUV light source device such as light source device 100, stable EUV light emission is not possible if the raw material is insufficient, so it is necessary to measure the amount of raw material in a container that supplies the raw material. In view of this, a technology (hereinafter, a comparative example) is used in which a sensor is hung inside the container to detect the position of the liquid surface of the raw material.

[0124] However, in the technology of the comparative example, the height of the liquid level cannot be detected unless the liquid level reaches the sensor. In other words, when the liquid level is at a position lower than the position of the sensor, specific information about the height of the liquid level cannot be obtained, and only the fact that the liquid level is "lower than the position of the sensor" can be known.

[0125] As will be described later, this technology can be applied to the vessels in the raw material supply device 30 in Fig. 2 and the raw material container 21. That is, this technology can be applied not only to vessels for storing used raw materials such as the storage unit 40 described above, but also to vessels for supplying raw materials. That is, in a vessel for supplying raw materials, even if the liquid level is below the temperature sensor, it is possible to know the specific height of the liquid level.

[0126] If the specific height of the liquid level is unknown, it is not known when to replenish the raw material, and it may suddenly be discovered that the container is empty, which may cause problems with the operation of the light source device 100. In other words, this can happen with the technology of the comparative example. In contrast, with this technology, the liquid level is always known, so it is possible to replenish the raw material at the appropriate time. Note that when the liquid level is above the temperature sensor 46, although the specific height of the liquid level is unknown, it is possible to obtain information that "the liquid level is above the temperature sensor 46."

[0127] In addition, in the comparative example, it is not known when to discard the raw materials in the container that stores the used raw materials, so it may suddenly be discovered that the container is full, and the raw materials may overflow from the container. With this technology, the liquid level is always known, so disposal can be performed at the appropriate time, and this does not happen. In this way, with this technology, it is possible to appropriately schedule the supply and disposal of raw materials.

[0128] In the comparative technology, sensing is performed by the sensor coming into direct contact with the raw material. Therefore, the sensor comes into contact with the high-temperature molten raw material, which causes degradation. This causes problems such as a shortened service life of the sensor. In addition, contaminants generated from impurities float on the liquid surface, and the contaminants adhere to the tip of the sensor, causing problems such as the amount not being detected or being erroneously detected. In contrast, in this technology, the temperature sensor does not come into contact with the raw material. Therefore, there is no need for special treatment to impart heat resistance or corrosion resistance (such as coating or use of special materials), which reduces the manufacturing costs of the device.

[0129] In the technology of the comparative example, a sensor and a transmission line for transmitting a signal from the sensor to the outside are arranged inside the container. Therefore, it is necessary to secure a space for the sensor itself and the transmission line inside the container, which causes a problem that the container becomes large. On the other hand, in the technology of the present invention, the temperature sensor and the transmission line are arranged outside the container, so there is no need to secure a space for them inside the container, and it is possible to make the container smaller.

[0130] In addition, in the technology of the comparative example, an electrical access port communicating with the outside is required to extract the signal from the sensor to the outside. However, the heat inside the container escapes from this part, which deteriorates the heat retention of the container. In addition, since this part is in contact with the outside air, the temperature difference is large and it is prone to deterioration. As a result, problems such as outside air leaking due to deformation or cracking occur. On the other hand, in this technology, the temperature sensor is placed outside the container, so an access port is not necessary and it is possible to maintain high heat retention. In addition, deterioration and deformation are prevented.

[0131] Furthermore, in this embodiment, the amount of plasma raw material 1 is calculated based on the difference between a predetermined initial temperature and the temperature detected by temperature sensor 46. This makes it possible to calculate the amount with even greater accuracy.

[0132] In this embodiment, the amount of plasma raw material 1 is calculated based on (Equation 1). Therefore, if only two pieces of information, the initial amount, the initial temperature, and the detected temperature at a certain amount, are obtained, it is possible to calculate the corresponding amount for any detected temperature thereafter. In other words, it is possible to simplify the pre-measurement.

[0133] In the present embodiment, the amount is calculated based on a predetermined correspondence relationship between the detected temperature and the amount, which makes it possible to calculate the amount with high accuracy even if the relationship between the detected temperature and the amount is nonlinear.

[0134] Furthermore, in this embodiment, the height of the liquid surface of the plasma raw material 1 is calculated as the amount of plasma raw material 1. This makes it possible to intuitively grasp the amount of plasma raw material 1.

[0135] Furthermore, in this embodiment, the temperature sensor 46 is placed above the center of the storage section 40. With this technology, it is possible to calculate the specific amount of plasma raw material 1 when the liquid level is below the temperature sensor 46, so by placing the temperature sensor 46 higher, the range in which the specific amount can be calculated is expanded, and the amount can be calculated with even greater accuracy.

[0136] Furthermore, in this embodiment, heater 47 is placed at bottom 45 of storage section 40. As evaporated plasma raw material 1 accumulates in storage section 40 due to gravity, plasma raw material 1 accumulates first from bottom 45. By placing heater 47 at bottom 45, it is possible to reliably heat plasma raw material 1 even in the early stages of accumulation. Furthermore, by placing heater 47 on one side of bottom 45, an even greater heating effect is achieved.

[0137] <Second embodiment> A more detailed embodiment of the light source device 100 according to the present technology will be described as a second embodiment. In the following description, the description of the same configurations and functions as those of the light source device 100 described in the above embodiment will be omitted or simplified.

[0138] [Double structure] 6 and 7 are schematic diagrams showing a configuration example of a double-structured storage section 59. As in FIG. 3, FIG. 6 shows a cross section of the center of storage section 59 in the XZ plane as viewed from the positive side in the Y direction. FIG. 7 shows a cross section of the center of storage section 59 in the YZ plane as viewed from the positive side in the X direction. Storage section 59 has a shape almost similar to that of storage section 40 in FIG. 3, and has a top section 60, a side section 61, and a bottom section 62. In this example, two temperature sensors 46 are arranged on the right side of FIG. 6.

[0139] In this example, the side portion 61 has a double structure consisting of an outer member 63, an inner member 64, and an internal space S formed between the outer member 63 and the inner member 64. Most of the side portion 61 of the storage portion 59 has a double structure like the storage portion 54 in Fig. 4, and only a portion of the band-shaped portion where the temperature sensor 46 is disposed has a normal structure. This portion corresponds to the right side portion in Fig. 6.

[0140] The other parts (the left side in Fig. 6, and the left and right sides in Fig. 7) have a double structure. For example, in the left side of Fig. 6, an outer member 63 is disposed on the outside (left side) and an inner member 64 is disposed on the inside (right side), and an internal space S is formed between them.

[0141] This makes it possible to reduce heat dissipation throughout storage section 59 while facilitating thermal conduction to temperature sensor 46. For example, if side section 61 were entirely made of a normal structure made of a material with high thermal conductivity, thermal conduction to temperature sensor 46 would be easy, but the heat dissipation characteristics of side section 61 as a whole would be very high, and a lot of energy would be required to maintain the temperature of plasma raw material 1. By using a normal structure only for the necessary parts (the part where temperature sensor 46 is located) and a double structure for the other parts as in this example, it is possible to facilitate thermal conduction to temperature sensor 46 and minimize heat dissipation throughout side section 61.

[0142] This configuration is particularly effective when it is necessary to use a material with high heat dissipation characteristics (such as SUS, iron, aluminum, or copper) for the side portion 61. This makes it possible to select a material with low density but high heat dissipation characteristics, and also makes it possible to reduce the weight of the device.

[0143] Furthermore, in this example, the internal space S becomes a vacuum when the light source device 100 is operating, but it is also possible to reduce heat dissipation by filling the internal space S with a fibrous material that contains a large amount of space where no material is present, such as a porous material with poor thermal conductivity or steel wool.

[0144] In this example, the upper side of the internal space S communicates with the inside of the storage part 59. For example, on the left side of Fig. 6, the upper side of the internal space S is open and communicates with the space in the storage part 59 where the plasma raw material 1 exists and the space inside the chamber body 9.

[0145] In reservoir 59, the liquid level is constantly monitored by the results of detection by temperature sensor 46, and plasma raw materials 1 are discarded at the appropriate time, so plasma raw materials 1 generally do not overflow. However, there may be cases where the liquid level cannot be monitored due to a malfunction of the device, causing the plasma raw materials 1 to overflow. In such cases, in this example, the overflowing plasma raw materials 1 enters internal space S from above. When plasma raw materials 1 fill internal space S, heat from heater 47 is transferred to side portion 61 and external member 63, and the temperature of temperature sensor 46 rises rapidly, making it possible to detect an overflowing state of plasma raw materials 1.

[0146] Of course, a configuration may be adopted in which the upper side of the internal space S is not open and the internal space S does not communicate with the inside of the storage portion 59. Besides, the configurations of the outer member 63, the inner member 64, and the internal space S, such as specific shapes, are not limited.

[0147] [Structure with only some parts made of different materials] Thus, in this example, the side portion 61 is composed of a first member and a second member having a higher thermal conductivity than the first member. The temperature sensor 46 is disposed in the second member. Here, the double-structured portion (the outer member 63 and the inner member 64) corresponds to the first member according to the present technology, and the normal structured portion corresponds to the second member. In fact, the normal structured portion has a higher thermal conductivity than the double-structured portion. The temperature sensor 46 is disposed in the normal structured portion.

[0148] Without being limited thereto, for example, the first member may be made of a certain material, and the second member may be made of a material having a higher thermal conductivity than the material of the first member. That is, instead of making the thermal conductivity different due to differences in structure such as a normal structure or a double structure, the thermal conductivity may be made different due to differences in materials. This similarly makes it possible to minimize heat dissipation of the entire side portion 61 while facilitating heat conduction to the temperature sensor 46. Alternatively, the thermal conductivity may be made different due to differences in thickness of the side portion 61. Alternatively, the side portion 61 may be composed of any number of members having different thermal conductivities.

[0149] <Third embodiment> [Raw material container] FIG. 8 is a schematic diagram showing an example of the configuration of the plasma generation mechanism 6. FIG. 8 shows a detailed configuration of the plasma generation mechanism 6 shown in FIG. 2. In this example, a rotor 20 is immersed in the plasma raw material 1 contained in a raw material container 21. The raw material container 21 has a hollow disk shape, and the plasma raw material 1 is contained therein. The rotor 20 has a disk shape that is slightly smaller than the raw material container 21, and its lower part is immersed in the plasma raw material 1 in the raw material container 21. In FIG. 8, the raw material container 21, the rotor 20, and the plasma raw material 1 are shown by dashed lines. By using a configuration in which the rotor 20 is immersed as an LPP light source device, it is possible to generate radiation R efficiently. The raw material container 21 corresponds to one embodiment of a storage portion according to the present technology.

[0150] Furthermore, the plasma generation mechanism 6 has a cover structure 67. The cover structure 67 has a disk shape that is slightly larger than the source material container 21, and the source material container 21 and the rotor 20 are housed therein.

[0151] Furthermore, a pipe 68 is provided on the right side of the cover structure 67. The pipe 68 is a tube for supplying the plasma raw material 1 to the raw material container 21. The pipe 68 is provided, for example, at a position above the liquid level expected during use. The opening at the tip of the pipe 68 corresponds to one embodiment of a supply port according to the present technology.

[0152] Furthermore, in the present technology, the temperature sensor 46 is disposed at the same height as or above the tip of the pipe 68. In this example, the temperature sensor 46 is disposed on the left side surface of the cover structure 67, at approximately the same height as the tip of the pipe 68. Without being limited to this, the temperature sensor 46 may be disposed at a higher position, such as in the upper half of the cover structure 67. This makes it less likely that the liquid level will reach above the temperature sensor 46, and the height of the liquid level can be calculated with high accuracy.

[0153] Furthermore, in this technology, the heater 47 is placed at the same height as or below the tip of the pipe 68. In this example, the heater 47 is placed on the side of the cover structure 67, approximately at the 5 o'clock position. This is not limiting, and the heater 47 may be placed at the lowest part (6 o'clock position), etc. This allows the plasma raw material 1 to be heated efficiently, making it less likely that the plasma raw material 1 will solidify due to insufficient heating, for example.

[0154] [Layout variations] 9 and 10 are schematic diagrams showing variations in the arrangement of the temperature sensor 46 and the heater 47. In Fig. 9 and Fig. 10, a cross section taken along the YZ plane at the center in the left-right direction of the plasma generation mechanism 6 in Fig. 8 is shown as viewed from the positive side in the X direction. Note that the chamber body 9 and other components are omitted from the illustration.

[0155] In the example shown in FIG. 9, a space is provided inside the cover structure 67, and a motor 71 is disposed in the space. Furthermore, an opening is provided in the cover structure 67 that communicates the space with the outside (the space on the right side). A rod-shaped shaft member 72 is disposed in the opening, and the motor 71 is connected to the left side of the shaft member 72, and the center of the back surface (left side surface) of the rotating body 20 is connected to the right side. The drive of the motor 71 is controlled by the control unit 7, thereby realizing the rotation of the rotating body 20. A mechanical seal 73 is provided between the opening and the shaft member 72. This allows the rotating body 20 to rotate smoothly.

[0156] Two insertion openings 74, one above and one below, are provided on the rear surface (left surface) of the cover structure 67, and the temperature sensor 46 is inserted into the upper insertion opening 74. That is, while the temperature sensor 46 is arranged on the side of the cover structure 67 in FIG. 8, it is arranged on the rear surface in this example. The right end of the temperature sensor 46 faces the space in which the plasma raw material 1 exists, across the cover structure 67. Similarly, the heater 47 is arranged at the right end of the lower insertion opening 74. That is, the heater 47 is also arranged on the rear surface.

[0157] This allows for stable placement of the temperature sensor 46 and the heater 47. Furthermore, when the rear surface of the cover structure 67 is made of a thick member as in this example, it is possible to effectively utilize the portion where the motor 71 is not placed, i.e., the unused portion, as space for placing the temperature sensor 46 and the heater 47. This allows for a more compact device.

[0158] In the example of Fig. 10, the rear surface of the cover structure 67 is not thick as in Fig. 9, but the temperature sensor 46 and heater 47 are similarly arranged on the rear surface. For example, when it is not possible to arrange the temperature sensor 46 and heater 47 on the side surface due to space limitations, it is possible to adopt an arrangement like this example. Alternatively, for example, the temperature sensor 46 and heater 47 may be arranged on the front surface (right surface) of the cover structure 67.

[0159] Other variations in the placement of the temperature sensor 46 and heater 47 will now be described. The temperature sensor 46 may be placed above the heater 47. The examples in Figures 3 and 8 correspond to this case. For example, if the temperature sensor 46 is placed above the expected liquid level, and the heater 47 is also placed above the temperature sensor 46, the plasma raw material 1 will not be located near the heater 47, and heat will not be easily transferred to the plasma raw material 1. This configuration makes it possible to heat the plasma raw material 1 efficiently.

[0160] Temperature sensor 46 may also be disposed at the upper end of side portion 44 of storage portion 40. That is, temperature sensor 46 may be disposed at a position where the upper end of side portion 44 abuts against the lower surface of upper portion 43 in Fig. 3. This ensures that the liquid level is always located below temperature sensor 46, allowing the height of the liquid level to be calculated with high accuracy.

[0161] The heater 47 may also be disposed below the center of the storage section 40. The examples of Figures 3 and 8 correspond to this case. That is, the case in which the heater 47 is disposed at the bottom as in Figure 3 is also included in the case in which the heater 47 is disposed below the center. Alternatively, for example, the heater 47 may be disposed so as to be wrapped around the side section 44 below the center of the storage section 40. This makes it possible to heat the plasma raw material 1 even more efficiently.

[0162] 6 and 7, six heaters 47 are arranged in the Y direction so as to extend along the X direction, and all heaters 47 are arranged so as to be embedded in the bottom 62. The case where heaters 47 are embedded in the bottom 62 in this way is also included in the case where heaters 47 are arranged in the bottom 62. This makes it possible to heat the plasma raw material 1 more efficiently. Alternatively, a throw-in type heater 47 may be used. There are no other limitations on the specific arrangement of temperature sensors 46 and heaters 47.

[0163] <Fourth embodiment> [Circulatory system] Fig. 11 is a schematic diagram showing a configuration example of the raw material supplying device 30. Fig. 11 shows a detailed configuration of the raw material supplying device 30 shown in Fig. 2. The raw material supplying device 30 has a storage section 77, a heater 47, two temperature sensors 78 and 79, pipes 80 and 68, a supply pipe 81, a valve 82, and a pump 83. The storage section 77 in this example also corresponds to one embodiment of the storage section according to the present technology.

[0164] Pipe 80 is a bent pipe, with one end connected to the lower left side of the side of storage unit 77. The other end is connected to the right side of raw material container 21 in Figure 2. This allows plasma raw material 1 to flow from the outside of storage unit 77 (raw material container 21) through the inside of pipe 80. In Figure 11, the flow direction of plasma raw material 1 is diagrammatically shown by arrows. The piping 80 corresponds to an embodiment of the first piping according to the present technology.

[0165] The pipe 68 is also a bent pipe, with one end connected to the lower right side of the side of the storage section 77, and the other end connected to the right side of the raw material container 21 in Figure 2. This allows the plasma raw material 1 to flow through the inside of the pipe 68 and into the raw material container 21. The piping 68 corresponds to an embodiment of the second piping according to the present technology.

[0166] Supply pipe 81 is, for example, a straight pipe, and is inserted from above storage section 77 so that one end (opening) faces the liquid surface of the plasma raw material 1. Supply pipe 81 supplies plasma raw material 1 to storage section 77. The supply pipe 81 corresponds to an embodiment of a third pipe according to the present technology. There are no limitations on the diameter or specific shape of the pipes 80 and 68 and the supply pipe 81. For example, the pipes 80 and 68 may be straight, and the supply pipe 81 may be curved.

[0167] In this technique, at least one of the pipes 80 and 68 and the supply pipe 81 has a pump for moving the plasma raw material 1. In this example, only the pipe 68 has a pump 83. The pump 83 may be any type of pump and is disposed midway along the pipe 68.

[0168] The pump 83 moves the plasma raw materials 1. That is, by driving the pump 83, a flow of the plasma raw materials 1 is generated inside the pipes 80 and 68, and the plasma raw materials 1 flow into and out of the storage section 77 and raw material container 21. The driving of the pump 83 is controlled by the control section 7. Conversely, when the driving of the pump 83 stops, the inflow and outflow of the plasma raw materials 1 into and out of the storage section 77 etc. is also controlled. The driving rate of the pump 83 (the flow speed of the plasma raw materials 1) etc. are also controlled.

[0169] Alternatively, for example, pipe 80 or supply pipe 81 may have pump 83. Alternatively, pipes 80 and 68 and supply pipe 81 may all have pump 83. Such a configuration for circulating plasma raw material 1 may generally be called a circulation system.

[0170] Supply pipe 81 also has valve 82. Valve 82 may be any type of valve, such as a gate valve. Valve 82 controls the movement of plasma raw material 1. That is, by controlling the opening and closing of valve 82 by control unit 7, the flow of plasma raw material 1 inside supply pipe 81 is controlled, and the supply or non-supply of plasma raw material 1 to storage unit 77 is controlled. The supply rate of plasma raw material 1 may be controlled by controlling the opening degree of valve 82.

[0171] Temperature sensor 78 is disposed above the right side of storage section 77. Temperature sensor 79 is disposed below the right side of storage section 77. That is, in this example, the amount of plasma raw material 1 is calculated based on the temperature detected by temperature sensor 78, and at the same time, the amount is calculated based on the temperature detected by temperature sensor 79. In this case, for example, a process may be performed in which the average of the two amounts is used as the final calculated amount. This allows the amount to be calculated with even greater accuracy. When the amount is calculated using (Equation 1), some error may occur due to the linear approximation, and so this method is particularly effective.

[0172] Also, the upper temperature sensor 78 may be used as a sensor for judging the upper limit, and the lower temperature sensor 79 may be used as a sensor for judging the supply. Specifically, when the liquid level reaches the upper temperature sensor 78, it is judged that there is a risk of the plasma raw material 1 overflowing, and a notification is issued to stop the supply. Alternatively, the control unit 7 may control the operation of the storage unit 77, and the supply may be stopped automatically. Also, this judgment may be made not when the liquid level reaches the temperature sensor 78, but when the liquid level approaches a certain level.

[0173] Furthermore, if the liquid level drops to the lower temperature sensor 79, it is determined that there is a risk of a shortage of plasma raw material 1, and a notification is issued to the effect that supply should be initiated. In this case as well, the supply may be automatic, with the operation of valve 82 of supply pipe 81 being controlled by control unit 7. Alternatively, this determination may be made when the liquid level exceeds the position of temperature sensor 79 and then drops to a certain extent. This makes it possible to more appropriately determine the timing of supply of plasma raw material 1.

[0174] In this way, in this technology, multiple temperature sensors are arranged as temperature sensors. In this example, two temperature sensors 78 and 79 are arranged, but three or more temperature sensors may be arranged. This makes it possible to calculate the amount of plasma raw material 1 with even greater accuracy. Furthermore, the specific arrangement of each temperature sensor is not limited. Multiple temperature sensors may be arranged in storage section 40 or raw material container 21 in FIG. 2.

[0175] Similarly, multiple heaters 47 may be arranged in the reservoirs 40 and 77 and the raw material container 21. This makes it possible to heat the plasma raw material 1 even more efficiently. Alternatively, the heater 47 may be arranged in the pipes 68 and 80, or the supply pipe 81. For example, the heater 47 may be arranged so as to be wound around the pipe 68.

[0176] The temperature may also be detected by temperature sensors 78 and 79 when the flow of plasma raw material 1 in storage 77 is stopped. Specifically, for example, control unit 7 closes valve 82 and controls pump 83 to stop driving, completely stopping the flow of plasma raw material 1 in storage 77. Then, control unit 7 sends instructions to temperature sensors 78 and 79 to detect the temperature, and the temperature of plasma raw material 1 in a stationary state is detected. This allows the temperature to be detected when the transfer of heat in plasma raw material 1 is suppressed, making it possible to calculate the amount with even greater accuracy. There are no particular limitations on the specific method for detecting the temperature when the flow of plasma raw material 1 is stopped.

[0177] <Fifth embodiment> [Recycling of raw materials] 12 is a schematic diagram showing an example of the configuration of a plasma generation mechanism 6 capable of recycling the plasma raw material 1. In this example, a supply pipe 81 consists of a tip portion 86 (to the left of a valve 82) and a pipe portion 87 (to the right or below the valve 82). One end of the pipe portion 87 is connected to the right side of the side portion 44 of the storage portion 40, and the other end is connected to the valve 82. Reservoir 40 represents one embodiment of a reservoir other than reservoir 77 according to the present technology.

[0178] Furthermore, a pump 83 is provided in pipe section 87. When valve 82 is opened and pump 83 is driven, a flow of plasma raw material 1 is generated inside pipe section 87, and the plasma raw material moves from storage section 40 to storage section 77.

[0179] The plasma raw material 1 stored in storage section 40 is scattered material, etc., and may be reusable. In this case, it is possible to manually transfer the plasma raw material 1 from storage section 40 to storage section 77, but this would be a time-consuming task. By using the configuration of this example, the plasma raw material 1 is automatically transferred from storage section 40 to storage section 77, reducing the labor required for reuse. Note that not only the example shown in Figure 11, but also the system of this example may generally be referred to as a circulation system.

[0180] Sixth embodiment [Heater side temperature sensor] A temperature sensor may be disposed on the heater side, and the plasma raw material 1 may be heated by heater 47 based on the temperature detected by the heater-side temperature sensor, thereby maintaining the temperature of the plasma raw material 1 at a predetermined temperature.

[0181] 6, 9, and 10, a temperature sensor 90 is disposed near the heater 47 as a heater-side temperature sensor. In this example, the temperature is detected by the temperature sensor 90, and the detected temperature is acquired by the control unit 7. If the detected temperature is lower than a predetermined temperature, the drive is controlled to increase the output of the heater 47. Conversely, if the detected temperature is higher than the predetermined temperature, the drive is controlled to decrease the output of the heater 47. In other words, the temperature of the plasma raw material 1 is fed back to the heater 47, and the heater 47 is driven.

[0182] This makes it possible to maintain the temperature of the plasma raw material 1 with high precision, and prevents, for example, a drop in temperature of the plasma raw material 1, which would lead to solidification. Of course, a configuration may be adopted in which the heater 47 performs heating at a constant output, without providing the temperature sensor 90. The heater 47 corresponds to one embodiment of a heating mechanism according to the present technology. The temperature sensor 90 corresponds to an embodiment of a second temperature sensor according to the present technology. The heater 47 and the temperature sensor 90 correspond to an embodiment of a temperature adjustment mechanism according to the present technology.

[0183] 10, in particular, temperature sensor 90 is placed below the liquid level together with heater 47. Therefore, the liquid level is located above temperature sensor 90, and it is not possible to calculate the specific amount of plasma raw material 1. In other words, temperature sensor 90 is used only to control heater 47.

[0184] There is no specific limitation on the arrangement of the temperature sensor 90. For example, when multiple heaters 47 are arranged, one temperature sensor 90 may be arranged for each heater 47. Alternatively, multiple temperature sensors 90 may be arranged for one heater 47.

[0185] <Other embodiments> The present technology is not limited to the above-described embodiment, and various other embodiments can be realized.

[0186] [Type of plasma raw material] As the plasma raw material 1, tin, lithium, gadolinium, gallium, bismuth, indium, or an alloy containing at least one of these materials can be used. For example, when EUV light is extracted as the radiation R and the EUV light is used in a microscope, bismuth is used as the material. When X-rays are generated as the radiation R, indium is used as the material. By using these materials, it is possible to generate high-quality radiation R. There are no other limitations on the specific type of the plasma raw material 1.

[0187] In addition to liquid raw material, any form of plasma raw material 1 may be used, such as powder, or a solution raw material mixed with powder. Furthermore, this technology is also applicable to cases where the contents stored in the storage unit 40 are not raw materials.

[0188] [Container configuration] The side portion 44 of the storage portion 40 is made of, for example, ceramics, stainless steel, or silicon. The other components of the storage portion 40 may be made of any material. For example, if the plasma raw material 1 is corrosive, the storage portion 40 may be made of a corrosion-resistant material. Alternatively, the inner wall may be coated with a corrosion-resistant material. This makes it possible to select an inexpensive material. The side portion 44 is also made to have a thickness of, for example, 1 mm or more and 20 mm or less. Alternatively, it is made to have a thermal conductivity of 10 W / (m×k) or more and 200 W / (m×k) or less at 300 K. This makes it possible to calculate the amount of the plasma raw material 1 with even greater accuracy.

[0189] [Application to other devices] In this example, the case where the present technology is applied to an LPP light source device has been described, but the present technology is not limited thereto, and may be applied to a DPP type or LDP type light source device. Alternatively, the present technology may be applied to a raw material container used in a device other than a light source device.

[0190] [Configuration of information processing device] The calculated amount and the detected temperature may be transmitted to the outside by a communication unit of the information processing device 48. Also, the amount and the detected temperature may be stored in a memory unit. Also, the information processing device 48 may have a display unit and an operation unit. The display unit is, for example, a display device using liquid crystal, EL (Electro-Luminescence), etc., and displays the amount, the detected temperature, various images, various GUIs (Graphical User Interfaces), etc. to the user who uses the light source device 100. The operation unit is, for example, a keyboard, a pointing device, a touch panel, or other operation device. When the operation unit includes a touch panel, the touch panel may be integrated with the display unit. The plasma raw material 1 may be supplied or disposed of by the user operating the operation unit.

[0191] The light source device, plasma generation mechanism, plasma raw material, rotor, raw material container, raw material supply device, storage unit, temperature sensor, heater, information processing device, piping, supply pipe, valve, pump, and the like described with reference to the drawings are merely one embodiment, and can be modified as desired without departing from the spirit of the present technology. In other words, any other configuration for implementing the present technology may be adopted.

[0192] In the present disclosure, when the term "approximately" is used, this is used only to facilitate understanding of the description, and there is no special meaning in whether or not the term "approximately" is used. That is, in the present disclosure, concepts that define the shape, size, positional relationship, state, etc., such as "center," "middle," "uniform," "equal," "same," "orthogonal," "parallel," "symmetrical," "extended," "axial direction," "cubic," "rectangular," "cone," "disk," "polygonal," "cylinder," "spherical," "prism," "rod," etc., include concepts such as "substantially center," "substantially center," "substantially uniform," "substantially equal," "substantially the same," "substantially orthogonal," "substantially parallel," "substantially symmetrical," "substantially extended," "substantially axial direction," "substantially cubic," "substantially rectangular," "substantially cone," "substantially disc," "substantially polygonal," "substantially cylindrical," "substantially spherical," "substantially prism," "substantially rod," etc. For example, it also includes a state that is included within a predetermined range (e.g., a range of ±10%) based on the criteria of "perfectly centered," "perfectly central," "perfectly uniform," "perfectly equal," "perfectly the same," "perfectly orthogonal," "perfectly parallel," "perfectly symmetrical," "perfectly extended," "substantially cubic," "substantially rectangular," "substantially cone-shaped," "substantially disk-shaped," "substantially polygonal," "substantially cylindrical," "substantially spherical," "substantially prismatic," "substantially rod-shaped," and the like. Therefore, even if the word "approximately" is not added, the concept expressed by adding "approximately" may be included. Conversely, a perfect state is not excluded when the word "approximately" is added.

[0193] In the present disclosure, expressions using "more than", such as "greater than A" and "smaller than A", are expressions that comprehensively include both concepts that include equivalent to A and concepts that do not include equivalent to A. For example, "greater than A" is not limited to cases that do not include equivalent to A, but also includes "A or greater". Furthermore, "smaller than A" is not limited to "less than A", but also includes "A or less". When implementing the present technology, specific settings, etc. may be appropriately adopted from the concepts included in "greater than A" and "smaller than A" so that the effects described above are achieved.

[0194] It is also possible to combine at least two of the characteristic parts of the present technology described above. That is, the various characteristic parts described in each embodiment may be arbitrarily combined without distinction between the embodiments. In addition, the various effects described above are merely examples and are not limited thereto, and other effects may be exhibited. [Explanation of symbols]

[0195] 1. Plasma raw material 6. Plasma generation mechanism 7...Control section 20...Rotating body 21…Raw material container 30...Raw material supply device 40, 54, 59, 77…Storage section 44, 55, 56, 61…Side 45...bottom 46, 78, 79, 90...Temperature sensor 7...Heater 48...Information processing device 49…Controller 51...Calculation section 63...Outer member 64…Inner member 68, 80…Pipes 81…Supply pipe 82...Valve 83…Pump 100...Light source device

Claims

1. a storage section that stores contents and has a side; A first temperature sensor disposed on an exterior surface of the side portion; a temperature adjustment mechanism capable of maintaining the temperature of the contents contained in the container at a predetermined temperature; a calculation unit that calculates the amount of the content contained in the container based on the temperature detected by the first temperature sensor; A containment device comprising:

2. 2. The container device according to claim 1, The calculation unit calculates the amount of the content based on a difference between a predetermined initial temperature and the temperature detected by the first temperature sensor. Containment device.

3. 3. The container device according to claim 2, The calculation unit calculates the amount of the content by the following formula: Containment device. [0010] V: Amount of the content k: a given coefficient T ｘ : Temperature detected by the first temperature sensor T ０ : the predetermined initial temperature

4. 4. The container device according to claim 3, Said T ０ The value of is 100° C. or more. Containment device.

5. 5. The storage device according to claim 3 or 4, Said T ｘ The value of T ０ The difference in the values ​​is less than 100°C. Containment device.

6. 2. The container device according to claim 1, The calculation unit calculates the amount of the contents based on the temperature detected by the first temperature sensor and a predefined correspondence relationship between the temperature and the amount of the contents. Containment device.

7. 3. The container device according to claim 1 or 2, The calculation unit calculates the height of a surface of the content contained in the container. Containment device.

8. 3. The container device according to claim 1 or 2, The first temperature sensor is disposed above the temperature adjustment mechanism. Containment device.

9. 3. The container device according to claim 1 or 2, The first temperature sensor is disposed above the center of the storage portion. Containment device.

10. 10. The container device according to claim 9, The first temperature sensor is disposed at an upper end of a side portion of the housing portion. Containment device.

11. 3. The container device according to claim 1 or 2, The temperature adjustment mechanism is disposed below the center of the storage unit. Containment device.

12. 12. The containment device according to claim 11, The container has a bottom, The temperature adjustment mechanism is disposed at the bottom of the storage unit. Containment device.

13. 3. The container device according to claim 1 or 2, The rotating body is immersed in the contents contained in the container. Containment device.

14. 14. The containment device according to claim 13, The storage section is provided with a supply port for supplying the contents to the storage section, The first temperature sensor is disposed at the same height as or above the supply port. Containment device.

15. 14. The containment device according to claim 13, The storage section is provided with a supply port for supplying the contents to the storage section, The temperature adjustment mechanism is disposed at the same height as or below the supply port. Containment device.

16. 3. The container device according to claim 1 or 2, The first temperature sensor is a plurality of the first temperature sensors. Containment device.

17. 3. The container device according to claim 1 or 2, the temperature adjustment mechanism includes a heating mechanism that heats the content contained in the container, and a second temperature sensor; The heating mechanism maintains the temperature of the contents at a predetermined temperature by heating the contents based on the temperature detected by the second temperature sensor. Containment device.

18. 18. The containment device of claim 17, The second temperature sensor is disposed above the heating mechanism. Containment device.

19. 3. The container device according to claim 1 or 2, A first pipe for allowing the contents to flow in from the outside and a second pipe for allowing the contents to flow out to the outside are connected to the storage section, and a third pipe for supplying the contents to the storage section is inserted from above. Containment device.

20. 20. The containment device of claim 19, the third pipe has a valve for controlling the movement of the contents; The third pipe is connected to another of the storage units. Containment device.

21. 20. The containment device of claim 19, At least one of the first pipe, the second pipe, and the third pipe has a pump for moving the contents. Containment device.

22. 3. The container device according to claim 1 or 2, The side portion is made of ceramic, stainless steel, or silicon. Containment device.

23. 3. The container device according to claim 1 or 2, The side portion has a thickness of 1 mm or more and 20 mm or less. Containment device.

24. 3. The container device according to claim 1 or 2, The side portion has a thermal conductivity of 10 W / (m×k) or more and 200 W / (m×k) or less at 300K. Containment device.

25. 3. The container device according to claim 1 or 2, the side portion is configured of a first member and a second member having a thermal conductivity higher than that of the first member, The first temperature sensor is disposed on the second member. Containment device.

26. 3. The container device according to claim 1 or 2, The side portion has a double structure including an outer member, an inner member, and an internal space defined between the outer member and the inner member. Containment device.

27. 27. The containment device of claim 26, The internal space communicates with the interior of the storage section at an upper side. Containment device.

28. 3. The container device according to claim 1 or 2, The content is a liquid ingredient. Containment device.

29. 29. The containment device of claim 28, The liquid source is tin, lithium, gadolinium, gallium, bismuth, indium, or an alloy containing at least one of these materials. Containment device.

30. 3. The container device according to claim 1 or 2, The content is a powder raw material. Containment device.

31. a storage section that stores contents and has a side; A first temperature sensor disposed on an exterior surface of the side portion; a temperature adjustment mechanism capable of maintaining the temperature of the contents contained in the container at a predetermined temperature; In a containing device comprising: Calculating the amount of the content contained in the container based on the temperature detected by the first temperature sensor. Capacity calculation method.

32. 32. The method of claim 31, further comprising the steps of: The first temperature sensor detects the temperature in a state where the flow of the contents inside the storage portion is stopped. Capacity calculation method.

33. A light source device that generates radiation by converting a raw material into plasma using irradiation with an energy beam, A container portion that contains the raw material and has a side portion; A first temperature sensor disposed on an exterior surface of the side portion; a temperature adjustment mechanism capable of maintaining the temperature of the raw material accommodated in the accommodation unit at a predetermined temperature; a calculation unit that calculates the amount of the raw material accommodated in the accommodation unit based on the temperature detected by the first temperature sensor; A storage device having A light source device comprising:

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