Substrate processing device, substrate processing method, and method of producing article

Abstract

To provide a technique advantageous in shortening the time necessary for drying an internal wall face of an airtight container.SOLUTION: A substrate processing device comprises an airtight container, a substrate holder disposed in the airtight container and capable of holding a substrate coated with a solution, a gas introducing unit capable of introducing gas into the airtight container, and a gas discharging unit capable of discharging gas from inside the airtight container, with the gas introducing unit comprising a first introduction port opening to the inside of the airtight container, the gas discharging unit comprising a first gas discharge port opening to the inside of the airtight container, the upper face of the substrate holder including a first area for the substrate to be positioned therein, and a second area disposed outside the first area, and the first introduction port injecting gas into the airtight container so as to form a gas curtain between the ceiling of the airtight container and the second area.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a method for manufacturing an article. [Background technology]

[0002] When manufacturing articles such as panels (organic EL panels) having OLEDs (organic light emitting diodes), which are organic EL (electroluminescence) elements, there is a known method of applying a solution film to a desired location on a substrate using an inkjet device. A solution film is a film made of a solution containing a solute and a solvent. A film (layer) is formed on the substrate by drying the substrate, i.e., by evaporating the solvent contained in the solution film applied onto the substrate. A reduced pressure drying device, which is a substrate processing device, is used to dry the substrate.

[0003] Patent Document 1 discloses that the flow rate and type of gas injected toward the substrate are changed while adjusting the pressure inside the airtight container. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2014-199805 A Summary of the Invention [Problem to be solved by the invention]

[0005] Most of the solvent evaporated from the solution film on the substrate is exhausted to the outside of the airtight container by the pump, but a part of the solvent adheres to the inner wall surface of the airtight container. If the substrate for the next process is dried inside the airtight container with the solvent from the previous process still adhering to the inner wall surface of the airtight container, there is a risk of unevenness in the film thickness of the substrate for the next process. Therefore, after the substrate drying process is completed, it is necessary to thoroughly dry the inner wall surface of the airtight container, and the more the amount of solvent adhering to the inner wall surface of the airtight container, the longer the time required to dry the inner wall surface of the airtight container.

[0006] The present disclosure provides an advantageous technique for shortening the time required to dry the inner wall surface of an airtight container. [Means for solving the problem]

[0007] One aspect of the present disclosure is a substrate processing apparatus comprising: an airtight container; a substrate holding section disposed inside the airtight container and capable of holding a substrate having a solution applied thereto; a gas inlet section capable of introducing gas into the airtight container; and a gas exhaust section capable of exhausting gas from inside the airtight container, wherein the gas inlet section has a first inlet opening into the interior of the airtight container, and the gas exhaust section has a first exhaust port opening into the interior of the airtight container, an upper surface of the substrate holding section includes a first region where the substrate is disposed and a second region outside the first region, and the first inlet section injects gas into the interior of the airtight container so as to form a gas curtain between a ceiling of the airtight container and the second region. Effect of the Invention

[0008] According to the present disclosure, there is provided a technique that is advantageous for shortening the time required to dry the inner wall surface of an airtight container. [Brief description of the drawings]

[0009] [Figure 1] 1 is a schematic diagram of a reduced-pressure drying apparatus as an example of a substrate processing apparatus according to a first embodiment. [Diagram 2] FIG. 1 is a schematic diagram of a reduced pressure drying apparatus according to a first embodiment. [Diagram 3] FIG. 1 is a schematic diagram of a reduced pressure drying apparatus according to a first embodiment. [Figure 4] 4 is a flowchart of a substrate processing method according to the first embodiment. [Diagram 5] 1A to 1C are explanatory views of a substrate processing method according to a first embodiment. [Figure 6] FIG. 4 is a schematic diagram of a reduced pressure drying device according to Modification 1. [Figure 7] 11 is a schematic diagram of a reduced-pressure drying apparatus as an example of a substrate processing apparatus according to a second embodiment. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same reference numerals are used for the same components, and duplicated descriptions are omitted. In addition, in each drawing, components may be illustrated in a schematic manner, and the shapes, sizes, arrangements, etc. of components in the drawings do not necessarily match each other.

[0011] In the following embodiments, directions are indicated by an XYZ coordinate system, which is a Cartesian coordinate system. The X, Y, and Z directions are mutually orthogonal. In the XYZ coordinate system, the XY plane is a horizontal plane, and the XZ and YZ planes are vertical planes. The X and Y directions are horizontal directions. The negative direction of the Z axis is the vertical direction (gravity direction), in other words, the downward direction. Also, the positive direction of the Z axis is the upward direction.

[0012] First Embodiment 1 is a schematic cross-sectional view showing the configuration of a reduced-pressure drying apparatus 100, which is an example of a substrate processing apparatus according to the first embodiment. The reduced-pressure drying apparatus 100 is used in a part of a process for manufacturing an organic EL panel having an OLED, which is an organic EL element. The reduced-pressure drying apparatus 100 evaporates a solvent contained in a solution film F applied to a main surface MS of a substrate S, that is, performs a drying process for drying the substrate S, thereby forming a functional film such as an organic film on the substrate S.

[0013] The solution film F is composed of, for example, a solution containing a solute and a solvent for forming an organic film. The solvent contained in the solution film F preferably has a property that evaporation is promoted in a reduced pressure environment lower than atmospheric pressure. The evaporation of the solvent is preferably promoted, for example, at a temperature higher than room temperature (25° C.).

[0014] The solute may be a functional material for forming a functional thin film such as an electrode or an optical filter, or a functional element such as an OLED, etc. In other words, the solution film F may contain a functional material for a functional thin film or a functional element.

[0015] The solvent is preferably an organic solvent. The solvent contains at least one kind of organic solvent. Examples of the organic solvent include N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, diethylene glycol monomethyl ether, cyclohexanone, N,N-dimethylisobutyramide, N-methylformamide, N-methylacetamide, N-diethylformamide, cyclohexanol, ethylene glycol, ethylene glycol diglycidyl ether, 1,3-octylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, 1,3-butanediol, 1,4-butanediol, and the like. Examples of the monomer units include propylene glycol, hexylene glycol, propylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diacetone alcohol, γ-butyrolactone, ethyl lactate, N-hexyl acetate, and ethyl cellosolve acetate.

[0016] In the first embodiment, the solvent contained in the solution film F is N types (N is an integer of 2 or more) of organic solvents having different vapor pressures, for example, a mixed solvent containing two types of organic solvents.

[0017] The organic film is an organic layer, and is, for example, any one of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer of an OLED. The manufacture of an organic EL element includes a process of forming each of the organic films, ie, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer, on a substrate S. The solution film F is applied to a required location on the substrate S by a coating device before the substrate S is carried into the reduced pressure drying device 100.

[0018] The reduced pressure drying apparatus 100 comprises an airtight container 10, a substrate holding section 20 disposed inside the airtight container 10 and capable of holding a substrate S, a gas introduction section 50 capable of introducing gas into the inside of the airtight container 10, and a gas exhaust section 30 capable of exhausting gas from inside the airtight container 10 and reducing the pressure inside the airtight container 10 by exhausting gas from inside the airtight container 10.

[0019] The pressure of the external environment of the airtight container 10 is atmospheric pressure. The airtight container 10 is a member that defines an internal space SP0. The internal space SP0 is a space inside the airtight container 10. The airtight container 10 has a ceiling portion 110, a side wall portion 120, and a bottom portion 130. The inner wall surface 101 of the airtight container 10 includes a top surface 111 of the ceiling portion 110, a side surface 121 of the side wall portion 120, and a bottom surface 131 of the bottom portion 130.

[0020] The gas introduced into the airtight container 10 by the gas introduction part 50 is an inert gas. The inert gas is, for example, nitrogen. Note that the gas supplied into the airtight container 10 from the gas introduction part 50 is preferably an inert gas, but may be a gas other than the inert gas as long as it has a composition different from that of the solvent of the solution film F, for example, clean dry air.

[0021] The pressure in the internal space SP0 of the airtight container 10 is adjusted by supplying gas to the internal space SP0 via the gas inlet part 50. The pressure in the internal space SP0 during the drying process is adjusted by a balance between exhaust of gas such as solvent vapor or inert gas by the gas exhaust part 30 and supply of gas such as inert gas from the gas inlet part 50. The gas inlet part 50 has a main inlet part 51 and a sub inlet part 52.

[0022] The main inlet 51 has a plurality of valves 55 capable of adjusting the flow rate of the gas, and a plurality of inlets 53 opening into the internal space SP0 of the airtight container 10. The inlets 53 are an example of a second inlet. Each of the plurality of inlets 53 is connected to a corresponding one of the plurality of valves 55 by a pipe. The inlets 53 are disposed downstream of the corresponding valves 55 in the gas flow direction. The inlets 53 are provided in the airtight container 10, and the gas that has passed through the corresponding valve 55 is sprayed from the inlets 53 into the interior of the airtight container 10 toward the substrate holder 20.

[0023] The multiple inlets 53 are disposed in the ceiling portion 110 of the airtight container 10. In the first embodiment, they are through holes formed in the ceiling portion 110. The injection direction of the gas injected from each inlet 53 into the airtight container 10 is the negative direction of the Z axis, i.e., a direction perpendicular to the upper surface 21 of the substrate holding part 20.

[0024] The sub-inlet section 52 has a plurality of valves 56 as at least one valve capable of adjusting the flow rate of the gas, and a plurality of nozzles 540 as at least one nozzle. The plurality of nozzles 540 are disposed inside the airtight container 10. Each of the plurality of nozzles 540 has an inlet 54 which is an injection port. The inlet 54 is an example of a first inlet. The inlet 54 opens into the internal space SP0 of the airtight container 10.

[0025] The nozzles 540 are connected to corresponding valves 56 of the plurality of valves 56 by piping. The nozzles 540 are disposed downstream of the corresponding valves 56 in the gas flow direction. The nozzles 540 are provided in the airtight container 10, and the gas that has passed through the corresponding valves 56 is sprayed from the inlet 54 of the nozzle 540 into the airtight container 10 toward the substrate holder 20. The plurality of nozzles 540 are disposed in the ceiling portion 110 of the airtight container 10.

[0026] It is preferable that the valves 55 and 56 are mass flow controllers capable of minutely adjusting the flow rate. Any of the multiple inlets 53 may be an injection port of a nozzle.

[0027] The gas exhaust unit 30 includes a main decompression mechanism 31 and a sub-decompression mechanism 32. The main decompression mechanism 31 and the sub-decompression mechanism 32 each have a pump. The gas exhaust unit 30 may have one pump. That is, the gas exhaust unit 30 includes at least one pump, for example, a plurality of pumps. The plurality of pumps includes, for example, at least one of a dry pump and a diaphragm vacuum pump. The plurality of pumps may also include, for example, at least one of a turbo molecular pump, a cryopump, a sorption pump, an oil diffusion pump, a mechanical booster pump, an ejector pump, and an oil rotary vacuum pump.

[0028] The gas exhaust section 30 has a plurality of exhaust ports 33 connected to the main pressure reduction mechanism 31 by piping. The exhaust ports 33 are an example of a second exhaust port. The exhaust ports 33 are arranged upstream of the main pressure reduction mechanism 31 in the gas flow direction. The exhaust ports 33 are provided in the airtight container 10 and open to the inside of the airtight container 10. The gas inside the airtight container 10 is exhausted from the exhaust ports 33 to the outside of the airtight container 10 by the main pressure reduction mechanism 31. The plurality of exhaust ports 33 are arranged in the ceiling portion 110 of the airtight container 10.

[0029] Further, the gas exhaust section 30 has a plurality of exhaust ports 34 connected to the sub-pressure reduction mechanism 32 by piping. The exhaust ports 34 are an example of a first exhaust port. The exhaust ports 34 are arranged upstream of the sub-pressure reduction mechanism 32 in the gas flow direction. The exhaust ports 34 are provided in the airtight container 10 and open to the inside of the airtight container 10. The gas inside the airtight container 10 is exhausted from the exhaust ports 34 to the outside of the airtight container 10 by the sub-pressure reduction mechanism 32. The plurality of exhaust ports 34 are arranged in the ceiling portion 110 of the airtight container 10.

[0030] In the first embodiment, each of the main decompression mechanism 31 and the sub-decompression mechanism 32 has one pump, but each of the main decompression mechanism 31 and the sub-decompression mechanism 32 may have two or more pumps.

[0031] The reduced pressure drying apparatus 100 further includes a gate valve 12 provided in the airtight container 10. The substrate S coated with the solution film F to be dried is carried from the external space of the airtight container 10 into the internal space SP0 through the gate valve 12. After the drying process, the substrate S is carried out from the internal space SP0 to the external space through the gate valve 12. The substrate S is carried in and out by a transfer device RB placed outside the airtight container 10.

[0032] Moreover, the reduced pressure drying apparatus 100 further includes a temperature control unit 70. The temperature control unit 70 controls the temperature of the substrate holding unit 20, thereby controlling the temperature of the substrate S or the solution film F on the substrate S. The temperature control unit 70 preferably includes a heater that heats the substrate holding unit 20.

[0033] Furthermore, the temperature control unit 70 may include a cooler that cools the substrate holding unit 20. The temperature control unit 70 controls the temperature of the substrate holding unit 20 by performing at least one of heating and cooling on the substrate holding unit 20.

[0034] The temperature control unit 70 controls the multiple regions of the substrate holding unit 20 to be at the same temperature or at different temperatures so that the substrate S has a uniform temperature distribution. Preferably, the temperature control unit 70 controls the temperature difference between the multiple regions of the substrate S held by the substrate holding unit 20 to be within 10° C. More preferably, the temperature control unit 70 controls the temperature difference between the multiple regions of the substrate S held by the substrate holding unit 20 to be within 5° C. The temperature control unit 70 controls the temperature of the substrate holding unit 20 so that the temperature of the substrate S becomes a predetermined temperature within a range from 0° C. to 100° C. By heating the substrate holding unit 20, the drying speed of the solution film F applied on the substrate S can be improved.

[0035] Fig. 2 and Fig. 3 are schematic diagrams of the reduced pressure drying apparatus 100 according to the first embodiment. Fig. 2 is a schematic diagram of a part of the reduced pressure drying apparatus 100 when the ceiling part 110 of the airtight container 10 is viewed in the positive direction of the Z axis from the substrate S. Fig. 3 is a schematic diagram of a part of the reduced pressure drying apparatus 100 when the bottom part 130 of the airtight container 10 is viewed in the negative direction of the Z axis from the substrate S.

[0036] For convenience of explanation, substrate holding portion 20 is shown by a dashed line in Fig. 2. Also, Fig. 2 shows a preferred example of the number, shape, size and arrangement of inlet 53, inlet 54, exhaust outlet 33 and exhaust outlet 34, but these are not limited to the example in Fig. 2 and can be changed.

[0037] 2, the upper surface 21 of the substrate holding part 20 includes a region R1 in which the substrate S is placed, and a region R2 outside the region R1. The region R1 is an example of a first region, and the region R2 is an example of a second region. In a plan view, i.e., when viewed in the Z direction, the outer shape of the region R1 is rectangular, and the outer shape of the region R2 is rectangular.

[0038] In a plan view, i.e., when viewed in the Z direction, the inlet 53 and the exhaust port 33 are disposed at positions overlapping with the upper surface 21 of the substrate holding part 20. A partition wall 57 is provided on the ceiling part 110, and the partition wall 57 defines a plurality of small spaces SP1 to SP3. Each of the small spaces SP1 to SP3 communicates with the large space SP10 through an opening formed in the lower part of the partition wall 57. The plurality of small spaces SP1 to SP3 and the large space SP10 constitute an internal space SP0. In the example of Figs. 1 and 2, the plurality of small spaces SP1 to SP3 are three small spaces. At least one inlet 53 and at least one exhaust port 33 are disposed in each of the small spaces SP1 to SP3.

[0039] 2, in the first embodiment, a small space SP1 in the center, a small space SP2 around the small space SP1, and a small space SP3 around the small space SP2 are defined by partition walls 57. One inlet 53 is arranged corresponding to the small space SP1, four inlets 53 are arranged corresponding to the small space SP2, and eight inlets 53 are arranged corresponding to the small space SP3. The gas injected into each of the small spaces SP1 to SP3 is diffused into the large space SP10 through the respective openings.

[0040] In the first embodiment, one inlet 53 corresponding to the small space SP1 is connected to one valve 55, four inlets 53 corresponding to the small space SP2 are connected to one valve 55, and eight inlets 53 corresponding to the small space SP3 are connected to one valve 55. In this manner, the amount of gas injected from one inlet 53 may be adjusted by one valve 55, or the amount of gas injected from two or more inlets 53 may be adjusted by one valve 55.

[0041] As described above, by dividing the multiple small spaces SP1 to SP3 by the partitions 57, the flow rate of gas sprayed from each of the small spaces SP1 to SP3 into the large space SP10 is adjusted by the corresponding valve 55, and as a result, the pressure distribution in the internal space SP0 is effectively and uniformly adjusted.

[0042] The reduced pressure drying apparatus 100 further includes a plurality of guide plates 61, a plurality of guide plates 62, a plurality of drive units 63, and a plurality of drive units 64. Each of the plurality of drive units 63 drives at least one of the plurality of guide plates 61. In the first embodiment, one drive unit 63 drives one of the guide plates 61. Each of the plurality of drive units 64 drives at least one of the plurality of guide plates 62. In the first embodiment, one drive unit 64 drives one of the guide plates 62. The guide plate 61 is an example of a first guide member, the guide plate 62 is an example of a second guide member, the drive unit 63 is an example of a first drive unit, and the drive unit 64 is an example of a second drive unit. Each of the drive units 63 and 64 has, for example, an electric motor. Note that one drive unit 63 may drive two or more guide plates 61, and one drive unit 64 may drive two or more guide plates 62.

[0043] The guide plate 61 is disposed on the ceiling 110 of the airtight container 10 so as to guide the gas injected from the nozzle 540 into the airtight container 10 to the region R2. In plan view, i.e., in the Z direction, the guide plate 61 is disposed at a position between the region R1 and the nozzle 540. The guide plate 62 is disposed in the region R2 so as to guide the gas injected from the nozzle 540 into the airtight container 10 and reflected in the region R2 to the ceiling 110 of the airtight container 10. In plan view, i.e., in the Z direction, the nozzle 540 is disposed at a position between the guide plate 61 and the guide plate 62. That is, in the Z direction, the guide plate 61, the inlet 54 of the nozzle 540, and the guide plate 62 are arranged in this order in a direction moving away from the region R1 to the outside. The drive unit 63 can drive the guide plate 61 to adjust the angle of the guide plate 61, and is controlled by the control device 90. The drive unit 64 is capable of driving the guide plate 62 to adjust the angle of the guide plate 62 , and is controlled by the control device 90 .

[0044] When viewed in the Z direction, the multiple nozzles 540 (multiple inlets 54) are disposed outside the outline of the substrate S, i.e., outside the outline of the region R1, and are disposed at intervals from one another along the four sides. That is, when viewed in the Z direction, the multiple inlets 54 are disposed along the outer periphery of the region R1.

[0045] As viewed in the Z direction, the multiple exhaust ports 34 are disposed outside the outer shape of the upper surface 21 of the substrate holding part 20. Specifically, as viewed in the Z direction, the multiple exhaust ports 34 are disposed at intervals along the outer periphery of the upper surface 21.

[0046] When viewed in a plan view, i.e., in the Z direction, each guide plate 61 is arranged outside the outline of the substrate S, i.e., outside the outline of the region R1, and is a louver extending along a corresponding one of the four sides in parallel to the corresponding side. When viewed in a plan view, i.e., in the Z direction, each guide plate 62 is arranged outside the outline of the substrate S, i.e., outside the outline of the region R1, and is a louver extending along a corresponding one of the four sides in parallel to the corresponding side.

[0047] The reduced pressure drying apparatus 100 further includes a gas analyzer 81 that detects a specific gas in the atmosphere of the internal space SP0. The gas in the internal space SP0 is introduced into the gas analyzer 81 via a connection member 82. The gas analyzer 81 is, for example, a residual gas analyzer (RGA) such as a mass spectrometer. The specific gas detected by the gas analyzer 81 is a solvent gas evaporated from the solution film F on the substrate S.

[0048] The reduced pressure drying apparatus 100 further includes a pressure gauge 83 that detects the pressure in the internal space SP0 of the airtight container 10. The pressure gauge 83 is installed in the vicinity of the substrate S, for example, on the upper surface 21 of the substrate holding part 20. The installation location of the pressure gauge 83 is not limited to the vicinity of the substrate S, and the pressure gauge 83 may be installed in the airtight container 10, for example, on the ceiling part 110, or may be installed at the tip of a pipe extending to above the substrate S.

[0049] The reduced pressure drying apparatus 100 further includes a control device 90 that controls each part of the entire apparatus. The control device 90 is an example of a control unit. The control device 90 is composed of, for example, a computer. The control device 90 includes a CPU, which is an example of a processor, a RAM, which is a temporary storage device, a ROM and an SSD, which are non-temporary storage devices (recording media), and an I / O, which is an interface. The non-temporary storage device stores a control program that causes the CPU of the control device 90 to control each part of the entire apparatus in a manufacturing process described later. The control device 90 controls the pressure inside the airtight container 10 by controlling the main decompression mechanism 31 and the sub decompression mechanism 32 of the gas exhaust unit 30 and the valves 55 and 56 of the gas introduction unit 50. At that time, the control device 90 controls the supply and stop of gas to the inside of the airtight container 10 and the flow rate of gas by controlling the valves 55 and 56. The control device 90 also controls the angles of the guide plates 61 and 62.

[0050] In addition to the above-mentioned configuration, the control device 90 may be configured, for example, by a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array), an ASIC (abbreviation for Application Specific Integrated Circuit), a general-purpose or dedicated computer with a program embedded therein, or a combination of all or part of these.

[0051] Hereinafter, some steps including a drying step (drying process) among a plurality of steps in the method for manufacturing an organic EL panel, which is an example of an article, will be described. FIG. 4 is a flowchart of the substrate processing method according to the first embodiment. The substrate processing method corresponds to the drying step in the method for manufacturing an organic EL panel. In the substrate processing method, a process for evaporating the solvent contained in the solution film F applied on the substrate S is performed using a reduced pressure drying apparatus 100. FIG. 5 is an explanatory diagram of the substrate processing method according to the first embodiment. The horizontal axis in FIG. 5 indicates time. The vertical axis indicates the pressure in the internal space SP0 and the flow rate of the gas introduced into the airtight container 10 by the sub-introduction part 52. In addition, in the following description, a case will be described in which the solution film F contains two types of organic solvents having different vapor pressures, that is, a first solvent and a second solvent. The vapor pressure of the first solvent is higher than the vapor pressure of the second solvent.

[0052] A solution film F is applied to a necessary portion on the main surface MS of the substrate S by a coating device such as an inkjet device. Then, the substrate S on which the solution film F has been applied is carried onto the substrate holding unit 20 by the transport device RB. Then, under the control of the control device 90, a first drying process A1 for evaporating the solvent contained in the solution film F on the substrate S and a second drying process A2 for evaporating the solvent attached to the inner wall surface 101 of the airtight container 10 are performed. The first drying process A1 is an example of a first process, and is a process for drying the substrate S. The second drying process A2 is an example of a second process, and is a process for drying the inner wall surface 101 of the airtight container 10.

[0053] The more the amount of solvent adhered to the inner wall surface 101 of the airtight container 10, the longer the time required to dry the inner wall surface 101 of the airtight container 10. Therefore, in the first embodiment, gas is ejected from the inlet 54 of the nozzle 540 into the airtight container 10 so as to form a gas curtain between the top surface 111 of the ceiling part 110 of the inner wall surface 101 of the airtight container 10 and the region R2 of the upper surface 21 of the substrate holding part 20. This gas curtain makes it difficult for the solvent evaporated from the solution film F on the substrate S to adhere to the inner wall surface 101 of the airtight container 10. Therefore, the time required for the second drying process A2 described later can be shortened.

[0054] In step S1, the control device 90 controls the transfer device RB to carry the substrate S coated with the solution film F into the airtight container 10 and place it on the substrate holder 20.

[0055] Next, in step S2, the control device 90 executes a drying process. The drying process includes a first drying process A1 and a second drying process A2. First, the control device 90 executes the first drying process A1. In the drying process, the control device 90 controls the valves 55 and 56 of the gas introduction section 50 and the main decompression mechanism 31 and the sub decompression mechanism 32 of the gas exhaust section 30 so that the pressure value detected by the pressure gauge 83 approaches the pressure command value. At this time, the control device 90 also controls the drive unit 63 that drives the guide plate 61 and the drive unit 64 that drives the guide plate 62 to adjust the angle of the guide plate 61 and the angle of the guide plate 62.

[0056] First, the control device 90 controls the main decompression mechanism 31 and the sub decompression mechanism 32 of the gas exhaust part 30 and the valves 55 and 56 of the gas introduction part 50 so that the pressure in the internal space SP0 of the airtight container 10, i.e., the pressure indicated by the pressure gauge 83, decreases from atmospheric pressure to the first pressure P1 (period D1). As a result, the inside of the airtight container 10 is decompressed to the first pressure P1.

[0057] The period D1 is a process of reducing the pressure from atmospheric pressure to a first pressure P1. The first pressure P1 is a pressure lower than atmospheric pressure and higher than the vapor pressure of the first solvent and the vapor pressure of the second solvent. After the pressure indicated by the pressure gauge 83 reaches the first pressure P1, the control device 90 controls the main pressure reducing mechanism 31 and the sub pressure reducing mechanism 32 of the gas exhaust part 30 and the valves 55 and 56 of the gas introduction part 50 so that the pressure of the internal space SP0, i.e., the pressure indicated by the pressure gauge 83, is maintained at the first pressure P1 over the period D2. During the periods D1 and D2, the flow rate of the gas introduced from the sub introduction part 52 into the airtight container 10 is controlled to a first flow rate Q1. The period D2 is a preset first time.

[0058] During period D2, the control device 90 operates the gas exhaust section 30 while controlling the supply of inert gas from the gas introduction section 50 to the internal space SP0 so that the pressure indicated by the pressure gauge 83 exceeds the vapor pressure of the first solvent, i.e., becomes the first pressure P1.

[0059] During period D1, the pressure in the internal space SP0 is lowered from atmospheric pressure to the first pressure P1, and during period D2, the pressure in the internal space SP0 is maintained at the first pressure P1, so that the first and second solvents, especially the first solvent, evaporate uniformly from the solution film F. However, it is difficult to maintain a uniform pressure distribution in the space above the substrate S only by exhaust control of the gas exhaust unit 30. This is because the drying speed of the solution film F is not uniform at each position on the upper surface 21. In general, the solvent applied to the center of the substrate is more difficult to evaporate than the edge of the substrate. Furthermore, when the solution film F contains multiple types of solvents, the drying speed differs for each solvent.

[0060] Therefore, the control device 90 controls each of the multiple valves 55 so that the pressure distribution in the internal space SP0, particularly in the space above the substrate S, becomes uniform, and controls the amount of gas injected from each inlet 53 into the internal space SP0. For example, if the amount of solvent evaporated on the edge of the substrate S is greater than the amount of solvent evaporated on the center of the substrate S, the control device 90 controls each valve 55 so that the amount of gas injected toward the center of the substrate S is greater than the amount of gas injected toward the edge of the substrate S. This makes the amount of gas in the internal space SP0 uniform, i.e., the pressure distribution in the internal space SP0 becomes uniform.

[0061] In the period D2, most of the solvent evaporated from the solution film F is collected by the main decompression mechanism 31 through each exhaust port 33 of the gas exhaust unit 30, but a part of the solvent evaporated from the solution film F is not collected and adheres to the inner wall surface 101 of the airtight container 10. The solvent adhered to the inner wall surface 101 in the periods D1 and D2 is re-evaporated in the following period D3 and thereafter. The period D4 and the period D6 need to be longer as the amount of solvent adhering to the inner wall surface 101 increases. The area of ​​the inner wall surface 101 of the airtight container 10 is larger than the area of ​​the main surface MS of the substrate S, and the distance from the inner wall surface 101 to the exhaust port 33 is longer than the distance from the main surface MS of the substrate S to the exhaust port 33. Therefore, it generally takes longer to dry the inner wall surface 101 than to dry the substrate S.

[0062] In the first embodiment, the nozzle 540 is disposed on the top surface 111 of the ceiling portion 110 of the airtight container 10. Then, in periods D1 and D2, the nozzle 540 injects gas into the airtight container 10 so as to blow the gas onto the region R2 of the upper surface 21 of the substrate holding portion 20. That is, in periods D1 and D2, in order to prevent the solvent from adhering to the inner wall surface 101 of the airtight container 10, the nozzle 540 ejects gas at a flow rate Q1 toward the region R2 of the substrate holding portion 20. By ejecting the gas from the nozzle 540 toward the region R2 of the substrate holding portion 20, a gas curtain is formed between the top surface 111 of the ceiling portion 110 and the region R2 of the substrate holding portion 20. Even if a part of the solvent evaporated from the solution film F heads toward the side surface 121 of the airtight container 10, most of the solvent headed toward the side surface 121 is caught in the flow of the gas curtain formed between the nozzle 540 and the exhaust port 34 and is collected from the exhaust port 34. The shielding effect of such a gas curtain reduces adhesion of the solvent to the inner wall surface 101 .

[0063] At that time, the control device 90 controls the exhaust amount of the main pressure reduction mechanism 31 and the exhaust amount of the sub pressure reduction mechanism 32 according to the gas injection amount of the main inlet part 51 and the gas injection amount of the sub inlet part 52. In other words, the control device 90 controls the exhaust amount of the gas exhausted from the inside of the airtight container 10 through the exhaust port 34 and the exhaust port 33 according to the flow rate of the gas introduced into the inside of the airtight container 10 through the inlet 54 and the inlet 53.

[0064] Further, in order to prevent a large amount of gas discharged from the nozzle 540 from heading toward the substrate S, an exhaust port 34 is disposed between the nozzle 540 and the side surface 121 of the airtight container 10. This allows the gas discharged from the nozzle 540 to actively head toward the exhaust port 34, reducing disturbance of the pressure distribution in the space above the substrate S in the internal space SP0. This reduces unevenness in the drying of the substrate S.

[0065] 1, the gas injection direction from the inlet 54 is preferably oblique to the upper surface 21 of the substrate holding part 20. In addition, in the horizontal plane, the gas is preferably injected into the airtight container 10 so as to be directed toward the outside of the region R1, i.e., in the opposite direction to the direction toward the region R1, when viewed in the Z direction. This makes it possible to more effectively reduce the gas forming the gas curtain being sprayed onto the substrate S.

[0066] 2, it is preferable that the inlet 54 and the exhaust port 34 are disposed at positions that do not overlap with the region R1 when viewed in a plan view, i.e., in the Z direction, as shown in FIG. 2. This makes it possible to more effectively reduce the gas forming the gas curtain from being blown onto the substrate S.

[0067] 2, in a plan view, i.e., when viewed in the Z direction, the exhaust port 34 is preferably disposed at a position that does not overlap with the upper surface 21 of the substrate holding part 20. This makes it possible to more effectively reduce the gas forming the gas curtain from being blown onto the substrate S.

[0068] Moreover, the exhaust port 34 is preferably disposed in the ceiling portion 110 of the airtight container 10. This makes it possible to more effectively form a gas curtain between the top surface 111 of the ceiling portion 110 and the region R2.

[0069] Moreover, in a plan view, i.e., when viewed in the Z direction, the nozzle 540, i.e., the introduction port 54, is disposed at a position overlapping with the region R2, thereby making it possible to more effectively form a gas curtain between the top surface 111 of the ceiling portion 110 and the region R2.

[0070] In addition, the guide plates 61 and 62 ensure a smooth flow of gas from the nozzle 540 to the exhaust port 34, thereby improving the recovery efficiency of the solvent heading toward the side surface 121 and further reducing adhesion of the solvent to the inner wall surface 101.

[0071] Furthermore, the control device 90 controls the valve 56, the sub-decompression mechanism 32, and the guide plates 61, 62 in accordance with the elapsed time from the start of the first drying process A1 to control the amount of gas injected from the inlets 54 of the multiple nozzles 540 into the airtight container 10. The amount of gas injected is, for example, an amount determined in advance by an experiment.

[0072] The control device 90 may also control the valve 56, the sub-pressure reducing mechanism 32, and the guide plates 61 and 62 based on the analysis result of the gas analyzer 81. That is, the control device 90 may control the amount of gas injected from the inlet 54 into the airtight container 10 according to the amount of solvent in the atmosphere inside the airtight container 10. For example, the control device 90 may control the valve 56 so as to increase the flow rate of gas introduced and control the sub-pressure reducing mechanism 32 so as to increase the amount of gas exhausted according to an increase in the amount of solvent detected by the gas analyzer 81. Accordingly, the control device 90 may operate the guide plates 61 and 62 in a direction in which the angle between the guide plates 61 and 62 and the side surface 121 approaches parallel to each other so as to reduce the gas from moving toward the side surface 121 according to an increase in the amount of gas introduced. This can effectively reduce the adhesion of the solvent to the side surface 121. The control device 90 may also operate only the guide plates 61 and 62 in a direction in which the angle between the guide plates 61 and 62 and the side surface 121 approaches parallel to each other without changing the opening degree of the valve 56 and the sub-pressure reducing mechanism 32.

[0073] After the period D2 has elapsed, the control device 90 controls the main pressure reduction mechanism 31 and the sub pressure reduction mechanism 32 of the gas exhaust unit 30 and the valves 55 and 56 of the gas introduction unit 50 in the closing direction so that the pressure in the internal space SP0 of the airtight container 10, i.e., the pressure indicated by the pressure gauge 83, drops from the first pressure P1 to the second pressure P2 (period D3). As a result, the inside of the airtight container 10 is reduced to the second pressure P2. The flow rate of the gas introduced from the sub introduction unit 52 into the airtight container 10 is controlled from the first flow rate Q1 to a second flow rate Q2. The second flow rate Q2 is a flow rate smaller than the first flow rate Q1.

[0074] The period D3 is a process of reducing the pressure from the first pressure P1 to the second pressure P2. The second pressure P2 is lower than the first pressure P1, lower than the vapor pressure of the first solvent, and higher than the vapor pressure of the second solvent. After the pressure indicated by the pressure gauge 83 reaches the second pressure P2, the control device 90 controls the main pressure reducing mechanism 31 and the sub pressure reducing mechanism 32 of the gas exhaust unit 30 and the valves 55 and 56 of the gas introduction unit 50 so that the pressure of the internal space SP0, i.e., the pressure indicated by the pressure gauge 83, is maintained at the second pressure P2 over the period D4. During the period D4, the flow rate of the gas introduced from the sub introduction unit 52 into the inside of the airtight container 10 is maintained at the second flow rate Q2. The period D2 is a preset second time. In this way, the control device 90 controls the injection amount of the gas injected into the inside of the airtight container 10 from the introduction port 54 of the multiple nozzles 540 in the first drying process A1.

[0075] During period D3, the pressure in the internal space SP0 is reduced from the first pressure P1 to the second pressure P2, and during period D4, the pressure in the internal space SP0 is maintained at the second pressure P2, causing the solvent, particularly the second solvent, to evaporate from the solution film F.

[0076] In the first embodiment, since the solution film F contains two types of solvents with different vapor pressures, the substrate S is dried by two-stage pressure control. When the solution film F contains N types of solvents with different vapor pressures, it is preferable to dry the substrate S by N-stage pressure control. In this manner, the control device 90 controls the main decompression mechanism 31 and the valve 55 so that the pressure in the internal space SP0 becomes the set pressure in each of the periods D1, D2, D3, and D4.

[0077] During periods D3 and D4, the solvent also evaporates from the substrate S. Since a gas curtain is formed by injecting gas from the nozzle 540 into the inside of the airtight container 10, adhesion of the solvent to the inner wall surface 101 is reduced due to the shielding effect of the gas curtain.

[0078] In addition, in periods D3 and D4, the solvent adhering to the inner wall surface 101 of the airtight container 10 in periods D1 and D2 re-evaporates. Since the amount of solvent adhering to the inner wall surface 101 in periods D1 and D2 is reduced, the time required to dry the inner wall surface 101 of the airtight container 10 can be shortened, and the period D4 can be shortened. Therefore, the throughput of the reduced pressure drying apparatus 100 can be improved.

[0079] Also in periods D3 and D4, similarly to periods D1 and D2, the control device 90 controls the main decompression mechanism 31 and the sub decompression mechanism 32 of the gas exhaust part 30, the valves 55 and 56 of the gas introduction part 50, and the guide plates 61 and 62. This reduces adhesion of the solvent to the inner wall surface 101 of the airtight container 10.

[0080] As described above, the control device 90 executes the first drying process A1 in which the pressure inside the airtight container 10 is controlled to be lower than atmospheric pressure and higher than the vapor pressure of the solvent (e.g., the second solvent) contained in the solution. In the first drying process A1, the control device 90 injects gas into the airtight container 10 from the inlets 54 of the multiple nozzles 540 to form a gas curtain.

[0081] After the period D4 has elapsed, that is, after the first drying process A1 has ended, the control device 90 controls the gas exhaust unit 30 so that the pressure in the internal space SP0 of the airtight container 10, that is, the pressure indicated by the pressure gauge 83, decreases from the second pressure P2 to the third pressure P3 (period D5). At that time, the control device 90 controls to close the valve 56 so that the flow rate of the gas introduced from the sub-introduction unit 52 into the airtight container 10 becomes 0. As a result, the pressure inside the airtight container 10 is reduced to the third pressure P3.

[0082] The period D5 is a process of reducing the pressure from the second pressure P2 to the third pressure P3. The third pressure P3 is lower than the first pressure P1 and the second pressure P2, and is lower than the vapor pressure of the first solvent and the second solvent. In other words, the third pressure P3 is lower than the minimum vapor pressure of the solvent. After the pressure indicated by the pressure gauge 83 reaches the third pressure P3, the control device 90 controls the main decompression mechanism 31 and the sub-decompression mechanism 32 of the gas exhaust unit 30 so that the pressure in the internal space SP0, i.e., the pressure indicated by the pressure gauge 83, is maintained at the third pressure P3 over the period D6. The period D6 is a preset third time.

[0083] In periods D5 and D6, the substrate S is further dried and the inner wall surface 101 of the airtight container 10 is dried (refreshed). Since the amount of solvent adhering to the inner wall surface of the airtight container 10 is reduced by the gas curtain formed in periods D1 to D4, the time required for the second drying process A2 in periods D5 and D6 can be shortened and the throughput of the reduced-pressure drying apparatus 100 can be improved.

[0084] As described above, the control device 90 executes the second drying process A2 in which the pressure inside the airtight container 10 is controlled to a pressure lower than the vapor pressure of the solvent (e.g., the second solvent). Then, in the second drying process A2, the control device 90 stops the injection of gas from the inlets 54 of the multiple nozzles 540 into the airtight container 10, and stops the formation of the gas curtain. In this way, the second drying process A2 is executed in a state where the formation of the gas curtain is stopped, and the inner wall surface 101 is effectively dried.

[0085] Next, in step S3 shown in Fig. 4, the control device 90 determines whether the drying process has been completed. Whether the drying process has been completed is determined based on the output value of the gas analyzer 81 or a preset processing time. Note that, when the drying process includes a plurality of drying processes, the control device 90 may perform the determination process of step S3 at the start of the last drying process among the plurality of drying processes.

[0086] If step S3 is YES, that is, if the drying process is completed, the control device 90 executes the next step S4. If step S3 is NO, that is, if the drying process is not completed, the control device 90 returns to the process of step S2 again and continues the drying process. In step S4, the control device 90 controls the transfer device RB to transfer the substrate S held by the substrate holding part 20 to the outside of the airtight container 10.

[0087] The substrate that has been through the drying process is then processed in another process, thereby manufacturing an organic EL panel as an article. As described above, according to the first embodiment, the adhesion of the solvent to the inner wall surface 101 of the airtight container 10 is reduced, so that the time required to dry the inner wall surface 101 can be shortened, and thus the throughput of the second drying process A2 can be improved.

[0088] Although the solution film F includes a plurality of types of solvents having different vapor pressures, it may include one type of solvent. The inert gas introduced from the sub-introduction part 52 into the internal space SP0 is not limited to the periods D1 to D4, and the inert gas may be introduced from the sub-introduction part 52 into the internal space SP0 during the periods D5 or D6. The guide plate 61 and / or the guide plate 62 may be fixed so as to be inclined with respect to the horizontal plane.

[0089] <Modification 1 of the First Embodiment> Next, Modification 1 of the first embodiment will be described. In the following, elements with the same reference symbols as those in the first embodiment will have substantially the same configurations and functions as those described in the first embodiment unless otherwise specified, and differences from the first embodiment will be mainly described.

[0090] FIG. 6 is a schematic diagram of the reduced pressure drying apparatus 100A according to the first modification. FIG. 6 is a schematic diagram of a part of the reduced pressure drying apparatus 100A when the ceiling part 110 of the airtight container 10 is viewed from the substrate S in the positive direction of the Z axis. As shown in FIG. 6, the reduced pressure drying apparatus 100A may include a plurality of (four) nozzles 540A instead of the plurality of nozzles 540. Each of the four nozzles 540A is disposed outside the outline of the substrate S, i.e., outside the outline of the region R1, and has an inlet 54A extending parallel to the corresponding side along the corresponding side among the four sides. In this way, the inlet 54A of the nozzle 540A is not limited to a circular shape, and may be a slit shape.

[0091] <Second embodiment> A second embodiment of the present disclosure will be described. In the following, elements with the same reference symbols as those in the first embodiment will have substantially the same configurations and functions as those described in the first embodiment unless otherwise specified, and differences from the first embodiment will be mainly described.

[0092] 7 is a schematic cross-sectional view showing the configuration of a reduced-pressure drying apparatus 100B, which is an example of a substrate processing apparatus according to the second embodiment. In the reduced-pressure drying apparatus 100B of the second embodiment, the arrangement position of the nozzle 540 is changed. The reduced-pressure drying apparatus 100B includes a guide plate 61B, which is an example of a guide member, instead of the guide plates 61 and 62. The gas exhaust unit 30 further includes an exhaust port 34B.

[0093] In the second embodiment, the nozzle 540 is disposed on the region R2. The nozzle 540 injects gas into the inside of the airtight container 10 so as to blow the gas toward the ceiling portion 110 of the airtight container 10. The injection direction of the gas from the inlet 54 is preferably oblique to the upper surface 21 of the substrate holding portion 20. In addition, in the horizontal plane, it is preferable that the gas is injected into the inside of the airtight container 10 so as to be directed toward the outside of the region R1, that is, in the opposite direction to the direction toward the region R1, as viewed in the Z direction. This makes it possible to more effectively reduce the gas forming the gas curtain being blown onto the substrate S.

[0094] The guide plate 61B is disposed in the region R2 so as to guide the gas sprayed from the nozzle 540 into the airtight container 10 to the ceiling portion 110 of the airtight container 10. As viewed in the Z direction, the guide plate 61B is disposed between the region R1 and the nozzle 540. The reduced pressure drying apparatus 100B may further include a drive unit 64 as shown in FIG. 3 capable of driving the guide plate 61 to adjust the angle of the guide plate 61.

[0095] In the second embodiment, the nozzle 540 is installed in the region R2 of the substrate holding part 20, and the angle of the nozzle 540 is set so that the gas is discharged toward the side surface 121 of the airtight container 10. A guide plate 61B is installed near the nozzle 540. An exhaust port 34B is arranged in the side wall part 120 ahead of the inlet 54 of the nozzle 540 in the gas injection direction. An exhaust port 34 is arranged in the ceiling part 110. Either the exhaust port 34 or 34B may be omitted.

[0096] 4 and 5 in the first embodiment, and therefore the description will be omitted. As described above, according to the second embodiment, as in the first embodiment, a gas curtain is formed and adhesion of the solvent to the inner wall surface 101 of the airtight container 10 is reduced, so that the time required to dry the inner wall surface 101 can be shortened, and thus the throughput of the second drying process A2 can be improved.

[0097] The second embodiment may be combined with at least one of the first embodiment and its modified examples.

[0098] <Embodiments of the method for manufacturing an article> The method for manufacturing an article according to an embodiment of the present disclosure is suitable for manufacturing an article such as an organic electroluminescence (OLED) panel using an inkjet printing device. The method for manufacturing an article according to the present embodiment includes a step (coating step) of arranging or coating a solution film (a solution containing a solute and a solvent for forming an organic film) on a substrate by a printing method using an inkjet printing device or the like to obtain a coated substrate. The method also includes a step (drying step) of drying the solution film on the coated substrate by the above-mentioned reduced pressure drying device to obtain a dry substrate on which a dry film is formed. Furthermore, the manufacturing method includes other well-known steps (firing, cooling, dehumidification, dry cleaning, formation of electrodes, formation of a sealing film, etc.). The method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to conventional methods.

[0099] The present disclosure is not limited to the above-described embodiments, and many modifications of the embodiments are possible within the technical concept of the present disclosure. Furthermore, the effects described in the present embodiment are merely a list of the most preferable effects resulting from the embodiments of the present disclosure, and the effects of the embodiments of the present disclosure are not limited to those described in the present embodiment.

[0100] The disclosure of the above embodiments includes the following sections.

[0101] (Section 1) An airtight container; a substrate holder arranged inside the airtight container and capable of holding a substrate on which a solution has been applied; a gas inlet capable of introducing gas into the airtight container; a gas exhaust unit capable of exhausting gas from inside the airtight container, the gas introduction section has a first introduction port that opens into the inside of the airtight container, the gas exhaust unit has a first exhaust port that opens into the inside of the airtight container, an upper surface of the substrate holding part includes a first area in which the substrate is placed and a second area outside the first area; The first inlet injects gas into the inside of the airtight container so as to form a gas curtain between a ceiling portion of the airtight container and the second region. The substrate processing apparatus according to claim 1,

[0102] (Section 2) a gas injection direction of the first inlet is oblique to the upper surface of the substrate holding part; 2. The substrate processing apparatus according to item 1,

[0103] (Section 3) In a plan view, the first inlet and the first exhaust outlet are disposed at positions that do not overlap with the first region. 3. The substrate processing apparatus according to item 1 or 2,

[0104] (Section 4) In the plan view, the first exhaust port is disposed at a position that does not overlap with the upper surface of the substrate holding part. 4. The substrate processing apparatus according to item 3,

[0105] (Section 5) The first exhaust port is disposed in the ceiling of the airtight container. 5. The substrate processing apparatus according to any one of items 1 to 4,

[0106] (Section 6) The first introduction port is an injection port of a nozzle disposed inside the airtight container. 6. The substrate processing apparatus according to any one of items 1 to 5,

[0107] (Section 7) The nozzle is disposed on the ceiling of the airtight container. 7. The substrate processing apparatus according to item 6,

[0108] (Section 8) The nozzle injects gas into the inside of the airtight container so as to spray the gas onto the second region. 8. The substrate processing apparatus according to item 7,

[0109] (Section 9) In a plan view, the nozzle is disposed at a position overlapping with the second region. 9. The substrate processing apparatus according to item 7 or 8,

[0110] (Section 10) a first guide member arranged on the ceiling of the airtight container and guiding the gas injected from the nozzle into the airtight container to the second region; 10. The substrate processing apparatus according to any one of items 7 to 9,

[0111] (Section 11) In a plan view, the first guide member is disposed at a position between the first region and the nozzle. 11. The substrate processing apparatus according to item 10,

[0112] (Section 12) Further comprising a first driving unit capable of driving the first guide member to adjust the angle of the first guide member, 12. The substrate processing apparatus according to item 10 or 11,

[0113] (Section 13) a second guide member disposed in the second region and configured to guide the gas injected from the nozzle into the airtight container to the ceiling portion of the airtight container; 13. The substrate processing apparatus according to any one of items 10 to 12,

[0114] (Section 14) In a plan view, the nozzle is disposed at a position between the first guide member and the second guide member. Item 14. The substrate processing apparatus according to item 13,

[0115] (Section 15) Further comprising a second drive unit capable of driving the second guide member to adjust the angle of the second guide member. 15. The substrate processing apparatus according to item 13 or 14,

[0116] (Section 16) The nozzle is disposed in the second region. 7. The substrate processing apparatus according to item 6,

[0117] (Section 17) The nozzle injects gas into the inside of the airtight container so as to spray the gas onto the ceiling portion of the airtight container. Item 17. The substrate processing apparatus according to item 16,

[0118] (Section 18) a guide member disposed in the second region and configured to guide the gas injected from the nozzle into the airtight container to the ceiling portion of the airtight container, 18. The substrate processing apparatus according to item 16 or 17,

[0119] (Section 19) In a plan view, the guide member is disposed between the first region and the nozzle. 20. The substrate processing apparatus according to item 18, characterized in that:

[0120] (Section 20) Further comprising a drive unit capable of driving the guide member to adjust the angle of the guide member. 20. The substrate processing apparatus according to item 19,

[0121] (Section 21) a control unit that executes a first process of controlling the pressure inside the airtight container to a pressure lower than atmospheric pressure and higher than a vapor pressure of a solvent contained in the solution, and a second process of controlling the pressure inside the airtight container to a pressure lower than the vapor pressure of the solvent, The control unit injects a gas into the airtight container from the first inlet in the first process. 21. The substrate processing apparatus according to any one of items 1 to 20,

[0122] (Section 22) The control unit stops the injection of gas from the first introduction port into the airtight container in the second process. 22. The substrate processing apparatus according to item 21,

[0123] (Section 23) The control unit controls an injection amount of the gas injected into the airtight container from the first introduction port in the first process. 23. The substrate processing apparatus according to item 21 or 22,

[0124] (Section 24) the control unit controls an injection amount of the gas injected from the first inlet into the inside of the airtight container according to an amount of the solvent in the atmosphere inside the airtight container. 24. The substrate processing apparatus according to item 23,

[0125] (Section 25) the control unit controls an injection amount of the gas injected from the first introduction port into the inside of the airtight container in accordance with an elapsed time from the start of the first process. 24. The substrate processing apparatus according to item 23,

[0126] (Section 26) the gas introduction section has a second introduction port that opens into the inside of the airtight container, the gas exhaust unit has a second exhaust port that opens into the inside of the airtight container, the second inlet and the second exhaust outlet are disposed at positions overlapping with the upper surface of the substrate holding part in a plan view; the control unit controls an amount of gas exhausted from the inside of the airtight container through the first exhaust port and the second exhaust port in accordance with a flow rate of gas introduced into the inside of the airtight container through the first inlet and the second inlet. 26. The substrate processing apparatus according to any one of items 21 to 25,

[0127] (Section 27) The gas inlet portion has a plurality of the first inlets, In a plan view, the plurality of first introduction ports are arranged along an outer periphery of the first region. 27. The substrate processing apparatus according to any one of items 1 to 26,

[0128] (Section 28) A method for processing a substrate, comprising: 28. A process for evaporating a solvent contained in a solution applied onto a substrate is performed using the substrate processing apparatus according to any one of items 1 to 27. A substrate processing method comprising:

[0129] (Section 29) 1. A method for manufacturing an article, comprising: 28. Using the substrate processing apparatus according to any one of items 1 to 27, a process is performed to evaporate a solvent contained in a solution containing a functional material of a functional thin film or a functional element applied on a substrate. A method for producing an article comprising the steps of: [Explanation of symbols]

[0130] R1...region (first region), R2...region (second region), SP0...internal space, 10...airtight container, 20...substrate holder, 21...upper surface, 30...gas exhaust section, 34...exhaust port, 50...gas inlet section, 54...inlet port, 90...control device (control section), 100...reduced pressure drying device (substrate processing device), 101...inner wall surface, 110...ceiling section, 111...top surface, 540...nozzle

Claims

1. An airtight container; a substrate holder arranged inside the airtight container and capable of holding a substrate on which a solution has been applied; a gas inlet capable of introducing gas into the airtight container; a gas exhaust unit capable of exhausting gas from inside the airtight container, the gas introduction section has a first introduction port that opens into the inside of the airtight container, the gas exhaust unit has a first exhaust port that opens into the inside of the airtight container, an upper surface of the substrate holding part includes a first area in which the substrate is placed and a second area outside the first area; the first inlet injects gas into the inside of the airtight container so as to form a gas curtain between a ceiling portion of the airtight container and the second region; The substrate processing apparatus according to claim 1,

2. a gas injection direction of the first inlet is oblique to the upper surface of the substrate holding part; The substrate processing apparatus according to claim 1 .

3. In a plan view, the first inlet and the first exhaust outlet are disposed at positions that do not overlap with the first region. The substrate processing apparatus according to claim 1 .

4. In the plan view, the first exhaust port is disposed at a position that does not overlap with the upper surface of the substrate holding part. The substrate processing apparatus according to claim 3 .

5. The first exhaust port is disposed in the ceiling portion of the airtight container. The substrate processing apparatus according to claim 1 .

6. The first inlet is an injection port of a nozzle disposed inside the airtight container. The substrate processing apparatus according to claim 1 .

7. The nozzle is disposed on the ceiling of the airtight container. The substrate processing apparatus according to claim 6 .

8. The nozzle injects gas into the inside of the airtight container so as to spray the gas onto the second region. The substrate processing apparatus according to claim 7 .

9. In a plan view, the nozzle is disposed at a position overlapping with the second region. The substrate processing apparatus according to claim 7 .

10. a first guide member arranged on the ceiling of the airtight container and guiding the gas injected from the nozzle into the airtight container to the second region; The substrate processing apparatus according to claim 7 .

11. In a plan view, the first guide member is disposed at a position between the first region and the nozzle. The substrate processing apparatus according to claim 10 .

12. a first driving unit capable of driving the first guide member to adjust an angle of the first guide member; The substrate processing apparatus according to claim 10 .

13. a second guide member disposed in the second region and configured to guide the gas injected from the nozzle into the airtight container to the ceiling portion of the airtight container; The substrate processing apparatus according to claim 10 .

14. In a plan view, the nozzle is disposed at a position between the first guide member and the second guide member. The substrate processing apparatus according to claim 13 .

15. Further comprising a second drive unit capable of driving the second guide member to adjust an angle of the second guide member. The substrate processing apparatus according to claim 13 .

16. The nozzle is disposed in the second region. The substrate processing apparatus according to claim 6 .

17. The nozzle injects gas into the inside of the airtight container so as to spray the gas onto the ceiling portion of the airtight container. The substrate processing apparatus according to claim 16 .

18. a guide member disposed in the second region and configured to guide the gas injected from the nozzle into the airtight container to the ceiling portion of the airtight container; The substrate processing apparatus according to claim 16 .

19. In a plan view, the guide member is disposed between the first region and the nozzle. The substrate processing apparatus according to claim 18 .

20. Further comprising a drive unit capable of driving the guide member to adjust the angle of the guide member. The substrate processing apparatus according to claim 19 .

21. a control unit that executes a first process of controlling the pressure inside the airtight container to a pressure lower than atmospheric pressure and higher than a vapor pressure of a solvent contained in the solution, and a second process of controlling the pressure inside the airtight container to a pressure lower than the vapor pressure of the solvent, The control unit injects a gas into the airtight container from the first inlet in the first process. The substrate processing apparatus according to claim 1 .

22. the control unit stops injection of gas from the first introduction port into the airtight container in the second process. The substrate processing apparatus according to claim 21 .

23. The control unit controls an injection amount of the gas injected into the airtight container from the first inlet in the first process. The substrate processing apparatus according to claim 21 .

24. the control unit controls an injection amount of the gas injected from the first inlet into the inside of the airtight container in accordance with an amount of the solvent in the atmosphere inside the airtight container. The substrate processing apparatus according to claim 23 .

25. the control unit controls an injection amount of the gas injected from the first inlet into the airtight container in accordance with an elapsed time from the start of the first process. The substrate processing apparatus according to claim 23 .

26. the gas introduction section has a second introduction port that opens into the inside of the airtight container, the gas exhaust unit has a second exhaust port that opens into the inside of the airtight container, the second inlet and the second exhaust outlet are disposed at positions overlapping with the upper surface of the substrate holding part in a plan view, the control unit controls an amount of gas exhausted from the inside of the airtight container through the first exhaust port and the second exhaust port in accordance with a flow rate of gas introduced into the inside of the airtight container through the first inlet and the second inlet. The substrate processing apparatus according to claim 21 .

27. The gas inlet portion has a plurality of the first inlets, In a plan view, the plurality of first inlets are arranged along an outer periphery of the first region. The substrate processing apparatus according to claim 1 .

28. A method for processing a substrate, comprising: A process for evaporating a solvent contained in a solution applied onto a substrate is performed using the substrate processing apparatus according to any one of claims 1 to 27. A substrate processing method comprising:

29. 1. A method for manufacturing an article, comprising:

28. A process for evaporating a solvent contained in a solution containing a functional material of a functional thin film or a functional element coated on a substrate, using the substrate processing apparatus according to claim 1. A method for producing an article comprising the steps of:

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