Active Gas Generator

Abstract

The present disclosure aims to provide a structure of an active gas generating device capable of supplying high-purity active gas without complicating the manufacturing process. The electrode unit (81) has a dielectric protective film (FC2) in close contact with the lower surface of the dielectric film F2, with the dielectric film (F2) being the dielectric film to be protected out of the dielectric films (F2) and (F3). A discharge space (4) is provided in a dielectric space (18), which is a space where the dielectric protective film (FC2) and the dielectric film (F3) face each other, including a region where the high-voltage electrode (F5) and the ground electrode (F6) overlap in a plan view. The constituent material of the dielectric protective film (FC2) has a protective property of blocking irradiation of the dielectric film (F2) with ions generated by the dielectric barrier discharge when a dielectric barrier discharge occurs in the discharge space (4), and not chemically reacting with the ions.

Description

[Technical field]

[0001] The present disclosure relates to an active gas generation device that has a parallel plate type electrode structure and generates an active gas by utilizing a dielectric barrier discharge. [Background technology]

[0002] In conventional active gas generators that have a parallel plate electrode structure and employ a dielectric barrier discharge, the gap between the opposing metal electrodes (conductive film for electrodes) and dielectric film (dielectric film for electrodes), or the gap between opposing dielectric films, serves as the discharge space.

[0003] Conventional active gas generators employ a parallel plate dielectric barrier discharge, which generates a dielectric barrier discharge in a discharge space and activates a raw material gas introduced into the discharge space to generate an active gas.

[0004] An example of an active gas generator that employs parallel plate type dielectric barrier discharge is disclosed in Patent Document 1. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Publication No. 2019 / 138456 Summary of the Invention [Problem to be solved by the invention]

[0006] Such conventional active gas generators generate a dielectric barrier discharge in the discharge space, and therefore, depending on the type of source gas and the material of the dielectric film, there is a possibility that a dielectric film reaction phenomenon will occur in which ions generated by the dielectric barrier discharge react with the dielectric film, causing the elements or compounds that constitute the dielectric film to be released from the dielectric film.

[0007] When the dielectric film reaction phenomenon occurs, the released element or its compound will be mixed with the active gas, which means that impurities will be mixed into the active gas. In theory, this dielectric film reaction phenomenon can be prevented by changing the material of the dielectric film to a material that does not react chemically.

[0008] However, if the workability of the changed material is poor, or if the shape of the dielectric film is complex, there is a problem that the manufacturing process for forming the dielectric film of a complex shape becomes complicated.

[0009] As described above, conventional active gas generating devices have the problem that they do not suppress the above-mentioned dielectric film reaction phenomenon and are unable to generate high-purity active gas without complicating the manufacturing process.

[0010] An object of the present disclosure is to provide an active gas generator capable of solving the above-mentioned problems and supplying a high-purity active gas without complicating the manufacturing process. [Means for solving the problem]

[0011] The active gas generating device according to the present disclosure is an active gas generating device having an electrode unit that generates an active gas by activating a raw material gas supplied to a discharge space, the electrode unit comprising a first electrode configuration portion and a second electrode configuration portion provided below the first electrode configuration portion, the first electrode configuration portion including a first electrode dielectric film and a first electrode conductive film provided on an upper surface of the first electrode dielectric film, the second electrode configuration portion including a second electrode dielectric film and a second electrode conductive film provided on a lower surface of the second electrode dielectric film, and a dielectric space is formed between the first electrode dielectric film and the second electrode dielectric film. the discharge space includes a main discharge space which is a region where the first and second electrode conductive films overlap in a plan view within the dielectric space, the electrode unit further includes a dielectric protection member provided on the dielectric space side of a dielectric film to be protected which is at least one of the first electrode dielectric film and the second electrode dielectric film, and a constituent material of the dielectric protection member has a protection characteristic of blocking irradiation of the dielectric film to be protected by ions generated by the dielectric barrier discharge when a dielectric barrier discharge occurs in the discharge space, and not chemically reacting with the ions. Effect of the Invention

[0012] In the active gas generation device of the present disclosure, since a dielectric protection member having the above-mentioned protective properties is present between the dielectric space including the discharge space and the dielectric film to be protected, it is possible to suppress the dielectric film reaction phenomenon in which the dielectric film to be protected reacts with ions when a dielectric barrier discharge occurs in the discharge space.

[0013] As a result, the active gas generating device of the present disclosure can generate high-purity active gas by reliably preventing elements of the dielectric film to be protected, etc., from being mixed into the discharge space due to dielectric film reaction phenomena.

[0014] In addition, the electrode unit does not require any changes to the constituent materials of the dielectric films for the first and second electrodes, and can be constructed simply by adding a dielectric protection member, so the manufacturing process of the electrode unit does not become complicated.

[0015] The objects, features, aspects, and advantages of the present disclosure will become more apparent from the following detailed description and the accompanying drawings. [Brief description of the drawings]

[0016] [Figure 1] 1 is a plan view that illustrates a schematic planar structure of an active gas generation apparatus according to a first embodiment of the present disclosure. [Diagram 2] 2 is a cross-sectional view showing a cross-sectional structure taken along the line AA in FIG. 1. [Diagram 3] FIG. 1 is an explanatory diagram (part 1) that illustrates a schematic planar structure of an electrode unit. [Figure 4] 4 is an explanatory diagram showing a cross-sectional structure taken along the line BB in FIG. 3. [Diagram 5] FIG. 2 is an explanatory diagram (part 2) that illustrates a schematic planar structure of the electrode unit. [Figure 6] 6 is an explanatory diagram showing a cross-sectional structure of cross section taken along line CC of FIG. 5. [Figure 7] FIG. 2 is an explanatory diagram illustrating a planar structure of a housing. [Figure 8] FIG. 2 is an explanatory diagram illustrating a cross-sectional structure of a housing. [Figure 9] FIG. 2 is an explanatory diagram illustrating a planar structure of a high-voltage side dielectric film. [Figure 10] FIG. 4 is an explanatory diagram illustrating a cross-sectional structure of a high-voltage side dielectric film. [Figure 11] 4 is an explanatory diagram illustrating a planar structure of a ground-side dielectric film; FIG. [Figure 12] 4 is an explanatory diagram illustrating a cross-sectional structure of a ground-side dielectric film. FIG. [Figure 13] FIG. 2 is an explanatory diagram illustrating a planar structure of a power supply body. [Figure 14] FIG. 2 is an explanatory diagram illustrating a cross-sectional structure of a power supply body. [Figure 15] FIG. 2 is an explanatory diagram illustrating a planar structure of a ground conductor. [Figure 16] FIG. 4 is an explanatory diagram illustrating a cross-sectional structure of a ground conductor. [Figure 17]FIG. 17 is an explanatory diagram showing details of a region of interest in FIG. 16. [Figure 18] FIG. 2 is an explanatory diagram illustrating a planar structure of a cover dielectric film. [Figure 19] FIG. 2 is an explanatory view illustrating a cross-sectional structure of a cover dielectric film. [Figure 20] FIG. 4 is an explanatory diagram illustrating a planar structure of a ground-side electrode configuration portion. [Figure 21] FIG. 4 is an explanatory diagram illustrating a cross-sectional structure of a ground-side electrode configuration portion. [Figure 22] FIG. 2 is an explanatory diagram illustrating a planar structure of a shielding dielectric film. [Diagram 23] FIG. 2 is an explanatory diagram illustrating a cross-sectional structure of a shielding dielectric film. [Figure 24] 3 is an explanatory diagram illustrating a planar structure of a dielectric film support member; FIG. [Diagram 25] 3 is an explanatory diagram illustrating a schematic cross-sectional structure of a dielectric film support member. FIG. [Figure 26] 3 is an explanatory diagram illustrating a planar structure of a dielectric film suppressing member; FIG. [Figure 27] 3 is an explanatory diagram illustrating a schematic cross-sectional structure of a dielectric film suppressing member. FIG. [Figure 28] FIG. 28 is an explanatory diagram showing details of a region of interest in FIG. 27. [Figure 29] FIG. 4 is an explanatory diagram illustrating a planar structure of a pressing member. [Diagram 30] FIG. 4 is an explanatory diagram illustrating a cross-sectional structure of a pressing member. [Diagram 31] 3 is an explanatory diagram illustrating a typical ejection form of active gas from an electrode unit in the active gas generation device of the first embodiment. FIG. [Diagram 32] 3 is an explanatory diagram showing a schematic diagram of an ideal form of active gas ejection in the electrode unit of the first embodiment. FIG. [Diagram 33] 10 is an explanatory diagram showing a cross-sectional structure of an electrode unit in an active gas generation device according to a second embodiment. FIG. [Diagram 34] 10 is a first explanatory diagram illustrating a schematic structure of a ground conductor according to the second embodiment. FIG. [Diagram 35]13 is an explanatory diagram (part 2) that illustrates a schematic structure of the ground conductor according to the second embodiment. FIG. [Diagram 36] 13 is an explanatory diagram (part 1) that illustrates a schematic cross-sectional structure of a plurality of gas ejection ports in the second embodiment. FIG. [Figure 37] 13 is an explanatory diagram (part 2) that illustrates a schematic cross-sectional structure of a plurality of gas ejection ports in the second embodiment. FIG. [Figure 38] FIG. 11 is an explanatory diagram (part 1) showing the form of ejection of active gas within an opening of a housing of an electrode unit according to a second embodiment. [Figure 39] FIG. 11 is an explanatory diagram (part 2) showing the form of ejection of active gas within the opening of the housing of the electrode unit of the second embodiment. [Diagram 40] FIG. 11 is an explanatory diagram (part 3) showing the form of ejection of active gas within the opening of the housing of the electrode unit of the second embodiment. [Diagram 41] FIG. 11 is an explanatory diagram (part 4) showing the form of ejection of active gas within the opening of the housing of the electrode unit of the second embodiment. [Diagram 42] FIG. 11 is an explanatory diagram illustrating a basic aspect of an electrode unit used in an active gas generation device according to a third embodiment. [Diagram 43] FIG. 11 is an explanatory diagram showing the concept of an electrode unit used in an active gas generation device according to a second aspect of the third embodiment. [Diagram 44] FIG. 13 is an explanatory diagram showing a cross-sectional structure of an electrode unit 811 used in an active gas generator according to a second aspect of the third embodiment. [Diagram 45] 45 is an explanatory diagram illustrating a planar structure of the dielectric film support member shown in FIG. 44. [Figure 46] FIG. 13 is an explanatory diagram illustrating a basic aspect of an electrode unit used in an activated gas generation device according to a fourth embodiment. [Figure 47] FIG. 13 is an explanatory diagram illustrating a basic aspect of an electrode unit used in an active gas generation device according to a fifth embodiment. [Figure 48] FIG. 13 is an explanatory diagram illustrating the concept of an electrode unit 830 used in an active gas generator according to a second aspect of the fifth embodiment. [Figure 49]FIG. 13 is an explanatory diagram showing a cross-sectional structure of an electrode unit 831 used in an active gas generator according to a second aspect of the fifth embodiment. [Figure 50] 50 is an explanatory diagram showing a schematic diagram of a detailed structure of a region of interest in FIG. 49. [Figure 51] 50 is an explanatory diagram illustrating a planar structure of the dielectric film support member shown in FIG. 49. [Figure 52] FIG. 13 is an explanatory diagram illustrating a basic aspect of an electrode unit used in an activated gas generation device according to a sixth embodiment. [Figure 53] FIG. 13 is an explanatory diagram illustrating a basic aspect of an electrode unit used in an active gas generation device according to a seventh embodiment. [Figure 54] FIG. 13 is an explanatory diagram (part 1) showing the effect of the activated gas generation device of the seventh embodiment. [Figure 55] FIG. 2 is an explanatory diagram (part 2) showing the effect of the activated gas generation device of the seventh embodiment. [Figure 56] FIG. 13 is an explanatory diagram (part 3) showing the effect of the activated gas generation device according to the seventh embodiment. [Figure 57] FIG. 13 is an explanatory diagram showing a cross-sectional structure of an electrode unit used in an active gas generation device according to a second aspect of the seventh embodiment. [Figure 58] FIG. 58 is an explanatory diagram showing details of a region of interest in FIG. 57. [Figure 59] FIG. 2 is an explanatory diagram showing a cross-sectional structure of an active gas generation device according to a first and second aspect of the eighth embodiment. [Figure 60] FIG. 21 is an explanatory diagram showing a detailed structure of a region of interest in FIG. 59 in the first mode of the eighth embodiment. [Figure 61] FIG. 21 is an explanatory diagram showing a detailed structure of a region of interest in FIG. 59 in the second mode of the eighth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] <Embodiment 1> FIG. 1 is a plan view that typically illustrates a planar structure of an active gas generator 71 according to a first embodiment of the present disclosure.

[0018] As shown in the figure, in an active gas generator 71, three electrode units 51-53 are housed in a housing 1. A raw material gas G1 is supplied to each of the electrode units 51-53 via a gas flow path 21. Then, each of the electrode units 51-53 activates the raw material gas G1 supplied to the discharge space 4 to generate an active gas G2.

[0019] Fig. 2 is a cross-sectional view showing the cross-sectional structure taken along the line AA in Fig. 1. Figs. 3 to 6 are explanatory views partially explaining the structure of the electrode unit 50. The electrode unit 50 corresponds to any one of the electrode units 51 to 53. The electrode units 51 to 53 have the same structure.

[0020] Fig. 3 is an explanatory diagram showing a schematic planar structure of the electrode unit 50. Fig. 4 is an explanatory diagram showing the cross-sectional structure of the cross section BB in Fig. 3. Figs. 3 and 4 are first explanatory diagrams showing the structure of the ground conductor 6 and its surroundings.

[0021] Fig. 5 is an explanatory diagram showing a schematic planar structure of the electrode unit 50. Fig. 6 is an explanatory diagram showing the cross-sectional structure of cross section CC in Fig. 5. Figs. 5 and 6 are second explanatory diagrams showing the detailed structure of the ground conductor 6 and its surroundings.

[0022] Figures 7 to 30 are explanatory diagrams showing details of the components of the electrode unit 50. Figures 7 and 8 are explanatory diagrams showing typically the structure of the housing 1. Figure 7 shows the planar structure of the housing 1, and Figure 8 shows the cross-sectional structure of the housing 1.

[0023] 9 and 10 are explanatory diagrams each showing a schematic structure of the high voltage side dielectric film 2. Fig. 9 shows the planar structure of the high voltage side dielectric film 2, and Fig. 10 shows the cross-sectional structure of the high voltage side dielectric film 2.

[0024] 11 and 12 are explanatory diagrams each showing a schematic structure of the ground side dielectric film 3. Fig. 11 shows the planar structure of the ground side dielectric film 3, and Fig. 12 shows the cross-sectional structure of the ground side dielectric film 3.

[0025] 13 and 14 are explanatory diagrams each showing a schematic structure of the current feeder 5. Fig. 13 shows the planar structure of the current feeder 5, and Fig. 14 shows the cross-sectional structure of the current feeder 5.

[0026] Fig. 15 to Fig. 17 are explanatory diagrams each showing a schematic structure of the ground conductor 6. Fig. 15 shows the planar structure of the ground conductor 6, Fig. 16 shows the cross-sectional structure of the ground conductor 6, and Fig. 17 shows details of a focused region R1 in Fig. 16.

[0027] 18 and 19 are explanatory views each showing a schematic structure of the cover dielectric film 8. Fig. 18 shows the planar structure of the cover dielectric film 8, and Fig. 19 shows the cross-sectional structure of the cover dielectric film 8.

[0028] Fig. 20 and Fig. 21 are explanatory diagrams each showing a schematic structure of the ground side electrode component E2. Fig. 20 shows the planar structure of the ground side electrode component E2, and Fig. 21 shows the cross-sectional structure of the ground side electrode component E2. The ground side electrode component E2 includes a combination structure of the ground side dielectric film 3, the conductive film 7, and the cover dielectric film 8.

[0029] 22 and 23 are explanatory diagrams each showing a schematic structure of the shielding dielectric film 9. Fig. 22 shows the planar structure of the shielding dielectric film 9, and Fig. 23 shows the cross-sectional structure of the shielding dielectric film 9.

[0030] 24 and 25 are explanatory diagrams each showing a schematic structure of the dielectric film support member 10. Fig. 24 shows the planar structure of the dielectric film support member 10, and Fig. 25 shows the cross-sectional structure of the dielectric film support member 10.

[0031] Fig. 26 to Fig. 28 are explanatory diagrams each showing a schematic structure of the dielectric film suppressing member 11. Fig. 26 shows the planar structure of the dielectric film suppressing member 11, Fig. 27 shows the cross-sectional structure of the dielectric film suppressing member 11, and Fig. 28 shows details of a focused region R2 in Fig. 27.

[0032] Fig. 29 and Fig. 30 are explanatory diagrams each showing a schematic structure of the pressing member 12. Fig. 29 shows the planar structure of the pressing member 12, and Fig. 30 shows the cross-sectional structure of the pressing member 12.

[0033] 1 to 30 each show the active gas generator 71, the electrode unit 50, or components of the electrode unit 50, and the shapes including the scale do not necessarily match between Fig. 1 to Fig. 30. Also, an XYZ orthogonal coordinate system is shown in each of Fig. 1 to Fig. 30.

[0034] The activated gas generating device 71 according to the first embodiment will be described below with reference to the above-mentioned Figs. 1 to 30 as appropriate.

[0035] (Overall structure) As shown in FIG. 1, the active gas generator 71 includes a plurality of electrode units 51-53, and a conductive housing 1 that houses the electrode units 51-53 in a housing internal space S1 (see FIG. 8).

[0036] As shown in FIGS. 2 and 7, the housing 1 has a housing bottom 1a including a flat surface 1F and a conductor accommodating space 6S recessed in the depth direction from the flat surface 1F.

[0037] As shown in FIG. 8, the housing 1 has a housing bottom 1a, a housing side 1b and a housing top 1c, and the housing bottom 1a, the housing side 1b and the housing top 1c form an internal housing space S1 that houses the electrode units 51-53 therein.

[0038] The electrode units 51 to 53 are accommodated in the housing internal space S1 of the housing 1 with the ground conductor 6 disposed in the conductor accommodating space 6S. As shown in Fig. 7, a source gas G1 supplied from the outside is supplied to a source gas flow space provided on the lower and side surfaces of the ground conductor 6 disposed in the conductor accommodating space 6S via a gas flow passage 21 provided in the housing bottom 1a.

[0039] The electrode unit 51 (50) includes a high-voltage side electrode component E1 which is a first electrode component, and a ground side electrode component E2 which is a second electrode component provided below the high-voltage side electrode component E1.

[0040] The electrode unit 51 is provided below the ground side electrode component E2, which is the second electrode component, and further includes a ground conductor 6, which is a reference potential conductor accommodated in the conductor accommodating space 6S. The ground conductor 6 is made of a conductor such as a metal.

[0041] The high-voltage side electrode configuration part E1 which is the first electrode configuration part includes a high-voltage side dielectric film 2 which is the first electrode dielectric film, and a power supply body 5 which is the first electrode conductive film formed on the upper surface of the high-voltage side dielectric film 2. The power supply body 5 which is the first electrode conductive film is provided on a power supply body arrangement recess 28 which is provided in the center of the high-voltage side dielectric film 2 which is the first electrode dielectric film.

[0042] The high voltage side dielectric film 2 is made of a dielectric material, and the power feeder 5 is made of a conductor such as a metal. For example, the power feeder 5 is made of a metal.

[0043] The ground-side electrode configuration portion E2 includes a ground-side dielectric film 3 which is a dielectric film for the second electrode, and a conductive film 7 which is a conductive film for the second electrode formed on the lower surface of the ground-side dielectric film 3. Since the conductive film 7 is thin, its illustration is omitted in Fig. 2 and the like, and the formation region of the conductive film 7 is shown in Figs. 20 and 21.

[0044] The ground side dielectric film 3 is made of a dielectric material, and the conductive film 7 is made of a conductor such as a metal.

[0045] The ground conductor 6, which is a reference potential conductor, has a non-penetrating active gas buffer space 68 at its upper part, and the ground side electrode component E2 is disposed so as to close the active gas buffer space 68. Therefore, outside the active gas buffer space 68, the lower surface of the conductive film 7 and the upper surface of the ground conductor 6 are in contact with each other.

[0046] The ground side dielectric film 3, which is the dielectric film for the second electrode, has a dielectric through hole 3h penetrating the ground side dielectric film 3 in a region overlapping with the active gas buffer space 68 in a planar view, and the conductive film 7, which is the conductive film for the second electrode, has a conductive film opening 7h in a region overlapping with the active gas buffer space 68 in a planar view, and the conductive film opening 7h overlaps with the dielectric through hole 3h in a planar view.

[0047] The housing bottom 1a of the housing 1 has a gas flow path 21 that receives the source gas G1 from the outside, and a source gas distribution space is provided between the ground conductor 6 and the conductor accommodating space 6S of the housing 1. The source gas distribution space includes a source gas buffer space 61, a slit space 62, and a side space 63, as described later.

[0048] The source gas G1 is introduced into the main discharge space of the discharge space 4 through the gas flow path 21 and the source gas flow space. Note that the main discharge space means the discharge space 4 in the dielectric space 18 between the high voltage side dielectric film 2 and the ground side dielectric film 3, as will be described later.

[0049] An AC voltage is applied from an AC power source 15 to the power supply 5, which is a conductive film for the first electrode, via electrical connection means such as electrical wiring or a lead-in terminal. Note that illustration of the electrical connection means is omitted in Fig. 2 and other figures.

[0050] On the other hand, the housing 1 is set to the ground potential, which is the reference potential, so that the conductive film 7, which is the conductive film for the second electrode, is set to the ground potential via the housing 1 and the ground conductor 6.

[0051] The electrode unit 51 (50) further includes auxiliary members such as a dielectric film supporting member 10, a dielectric film suppressing member 11, and a pressing member 12.

[0052] (Fixing of high voltage side dielectric film 2) The step portion 102 of the dielectric film support member 10 is provided on the flat surface 1F of the housing 1, and has an upper surface that serves as a support surface 10F that supports the high-voltage side dielectric film 2 from below. At this time, the dielectric film support member 10 is placed on the flat surface 1F so that the side surface of the dielectric film support member 10 coincides with the side surface of the conductor accommodating space 6S of the housing bottom 1a of the housing 1.

[0053] The dielectric film suppressing member 11 is a member for suppressing the high-voltage side dielectric film 2 from above, and does not overlap with the power feeder 5 in plan view. In other words, on the upper surface of the high-voltage side dielectric film 2, there is an exposed area EX2 where the dielectric film suppressing member 11 and the power feeder 5 are not formed.

[0054] 6, 27 and 28, the lower surface of the dielectric film suppressing member 11 has a dielectric contact region 112 that contacts the upper surface of the high-voltage side dielectric film 2 and a dielectric non-contact region 111 that does not contact the upper surface of the high-voltage side dielectric film 2. The dielectric contact region 112 is a region that contacts the high-voltage side dielectric film 2 and applies a load, while the dielectric non-contact region 111 is a region that does not contact the high-voltage side dielectric film 2 and protrudes toward the power feeder 5 on the upper surface of the high-voltage side dielectric film 2.

[0055] The dielectric contact region 112 overlaps with the peripheral region of the high-voltage side dielectric film 2 and the support surface 10F of the dielectric film support member 10 in plan view, while the dielectric non-contact region 111 overlaps with the middle region located inside the peripheral region of the high-voltage side dielectric film 2 in plan view. In other words, the middle region is the region adjacent to the power feeder 5 side from the peripheral region of the high-voltage side dielectric film 2.

[0056] The dielectric film suppressing member 11 is made of a metal or the like, has electrical conductivity, and is set to a ground potential, which is a reference potential, via the housing 1, the mounting bolt 31, and the pressing member 12. The mounting bolt 31 and the pressing member 12 are also electrically conductive.

[0057] Therefore, the high voltage side dielectric film 2 is pressed down from above by the dielectric film suppressing member 11 in the dielectric contact region 112. The combined structure of the dielectric film supporting member 10, the dielectric film suppressing member 11 and the pressing member 12 will be described in detail below.

[0058] As shown in FIG. 2, the pressing member 12 is disposed on the upper surface of the dielectric film support member 10, and the pressing member 12 and the dielectric film support member 10 are fixed onto the housing bottom 1a of the housing 1 by mounting bolts 31.

[0059] 24 and 25, the dielectric film support member 10 has a circular shape with a central opening 100 in the center in a plan view. A step structure consisting of a step portion 102 and a peripheral upper surface 101 is provided in an annular shape around the central opening 100. The upper surface of the step portion 102 becomes the support surface 10F. A plurality of through holes 10h are provided discretely in a circle in the peripheral upper surface 101 on the outer periphery side of the step portion 102 (support surface 10F).

[0060] 9 and 10, the high-voltage side dielectric film 2 has a circular shape with a power supply arrangement recess 28 in the center in a plan view. A peripheral surface area 27 is provided in an annular shape around the power supply arrangement recess 28. The high-voltage side dielectric film 2 also has a circular recess bottom surface 26 in a plan view, and the bottom surface around the recess bottom surface 26 becomes a circular protrusion bottom surface 23 in a plan view.

[0061] 13 and 14, the power feeder 5 has a cylindrical shape. The power feeder 5 is arranged on the upper surface of the high-voltage side dielectric film 2 with the bottom surface of the power feeder 5 positioned on the power feeder arrangement recess 28 of the high-voltage side dielectric film 2.

[0062] An AC voltage is applied to the power supply 5, which is the conductive film for the first electrode, from the AC power source 15. As shown in Fig. 5, the power supply arrangement recess 28 includes the power supply 5 in plan view and has a planar shape that is slightly wider than the power supply 5.

[0063] The high-voltage side dielectric film 2 is disposed on the dielectric film support member 10 in such a manner that the support surface 10F of the dielectric film support member 10 contacts the convex bottom surface 23 of the high-voltage side dielectric film 2. The high-voltage side dielectric film 2 and the dielectric film support member 10 are in contact with each other via a sealing material such as an O-ring (not shown).

[0064] 26 and 27, the dielectric film suppressing member 11 has a circular shape with a central opening 110 in the center in a plan view. The annular lower surface region provided on the outer periphery of the central opening 110 is the dielectric non-contact region 111, and the annular lower surface region provided on the outer periphery of the dielectric non-contact region 111 is the dielectric contact region 112.

[0065] 28, the dielectric contact region 112 protrudes downward (in the -Z direction) further than the dielectric non-contact region 111, and is in contact with the upper surface U2 of the high-voltage side dielectric film 2. On the other hand, since a gap SP11 exists between the dielectric non-contact region 111 and the upper surface U2 of the high-voltage side dielectric film 2, the dielectric non-contact region 111 is not in contact with the upper surface U2 of the high-voltage side dielectric film 2.

[0066] 29 and 30, the pressing member 12 has a circular shape with a central opening 120 in the center in a plan view. A plurality of inner through-holes 121h are provided in a circular pattern in an outer peripheral region 125 on the outer periphery side of the central opening 120, and a plurality of outer through-holes 122h are provided in a circular pattern on the outer periphery side of the plurality of inner through-holes 121h.

[0067] In this manner, a plurality of inner through holes 121h and a plurality of outer through holes 122h are provided in the outer peripheral region 125 of the pressing member 12. Each of the plurality of inner through holes 121h is a tapped through hole.

[0068] A part of the outer peripheral region 125 of the pressing member 12 having the above-mentioned structure is placed on the dielectric film support member 10, and the dielectric film support member 10 and the pressing member 12 are fixed to the housing bottom 1a of the housing 1 by a plurality of mounting bolts 31. The threaded portions of the plurality of mounting bolts 31 pass through the plurality of outer through-holes 122h and the plurality of through-holes 10h, and are attached to the housing bottom 1a.

[0069] As shown in FIGS. 2 to 6, the pressing member 12 is disposed in a region overlapping with the dielectric film supporting member 10 and the dielectric film suppressing member 11 in plan view.

[0070] On the other hand, a plurality of suppression auxiliary members 32 are attached to the pressing member 12 in a manner that they penetrate the plurality of inner through-holes 121h of the pressing member 12. The suppression auxiliary members 32 may be bolts, setscrews, or the like. The plurality of suppression auxiliary members 32 are attached in the plurality of inner through-holes 121h so as to press the dielectric film suppressing member 11. The plurality of suppression auxiliary members 32 are provided at positions overlapping the dielectric contact region 112 of the dielectric film suppressing member 11 and the convex bottom surface 23 of the high voltage side dielectric film 2 in a plan view.

[0071] Therefore, the high voltage side dielectric film 2 is pressed down from the upper dielectric contact region 112 by the dielectric film suppressing member 11 receiving the pressing force of the plurality of suppression auxiliary members 32 .

[0072] As described above, in the electrode unit 50 of the active gas generator 71 of the first embodiment, the high-voltage side dielectric film 2, which is the first electrode dielectric film, is suppressed from the upper dielectric contact area 112 by the dielectric film suppressing member 11 which receives the pressing force of the multiple suppression auxiliary members 32. Therefore, the area where the load is applied to the high-voltage side dielectric film 2 by the dielectric film suppressing member 11 can be limited to only the area below the dielectric contact area 112.

[0073] As a result, the active gas generating apparatus 71 of embodiment 1 can stably fix the high-pressure side dielectric film 2 between the dielectric contact area 112 of the dielectric film suppressing member 11 and the support surface 10F of the dielectric film support member 10 without applying unnecessary bending stress to the high-pressure side dielectric film 2.

[0074] The dielectric film suppressing member 11 is set to a ground potential which is a reference potential and has electrical conductivity. The dielectric non-contact region 111 of the dielectric film suppressing member 11 overlaps with the middle region of the high voltage side dielectric film 2 in plan view.

[0075] Therefore, the electrode unit 50 can reduce the electric field strength of the power supply 5 by using the dielectric film suppression member 11 having the dielectric non-contact area 111 to lower the potential of the intermediate area of ​​the high-voltage side dielectric film 2, thereby lowering the potential in the outer diameter direction between the high-voltage side dielectric film 2 and the ground side dielectric film 3.

[0076] As a result, the electrode unit 50 in the active gas generator 71 of the first embodiment can reliably prevent dielectric breakdown in the gap 20 between the high voltage side dielectric film 2 and the dielectric film support member 10.

[0077] (Ground conductor 6) As shown in Figures 15 to 17, the ground conductor 6 accommodated in the conductor accommodating space 6S of the housing 1 has a circular shape in a plan view, and has a raw material gas buffer space 61 and a slit space 62 in the end region of the bottom surface.

[0078] The raw material gas buffer space 61 is formed in a flat circular ring shape and is connected to the gas flow path 21 as shown in FIG. 2, so that the raw material gas G1 supplied from the outside can be taken into the raw material gas buffer space 61 via the gas flow path 21.

[0079] 17, a plurality of slit spaces 62 are provided at intervals around the source gas buffer space 61. As shown in FIG. 17, each of the plurality of slit spaces 62 is connected to the source gas buffer space 61, and the source gas G1 can be circulated from the source gas buffer space 61 to the slit spaces 62.

[0080] As shown in Figs. 6 and 17, the side space 63 is a gap space between the inner peripheral side surface of the conductor accommodating space 6S and the outer peripheral side surface of the ground conductor 6, and is provided in an annular shape in plan view.

[0081] Since the dielectric film support member 10 and the ground conductor 6 have the positional relationship shown in FIGS. 3 and 4, the source gas G1 that has passed through the side space 63 is supplied to the lower side region R10 of the dielectric film support member 10.

[0082] In this manner, the source gas buffer space 61 is provided on the lower surface side of the ground conductor 6, and receives the source gas G1 via the gas flow path 21. The plurality of slit spaces 62 are provided on the lower surface side of the ground conductor 6, and are connected to the source gas buffer space 61.

[0083] The side space 63 is provided on the side surface of the ground conductor 6, and is connected to the plurality of slit spaces 62. As described above, the source gas flow space includes the source gas buffer space 61, the plurality of slit spaces 62, and the side space 63.

[0084] Therefore, the source gas G1 supplied to the gas flow passage 21 from the outside is guided to the discharge space 4 via the source gas buffer space 61, the slit space 62 and the side space 63.

[0085] Each of the multiple slit spaces 62 is set to a narrow space through which the raw material gas does not easily flow compared to the raw material gas buffer space 61 so that the raw material gas G1 flows into each of the multiple slit spaces 62 after being temporarily retained in the raw material gas buffer space 61. That is, the multiple slit spaces 62 have a smaller conductance, which is a coefficient representing the ease of flow of the raw material gas G1, compared to the raw material gas buffer space 61 and the side space 63.

[0086] As a result, the active gas generation device 71 of the first embodiment can spatially uniformly supply the raw material gas G1 to the discharge space 4. That is, the raw material gas G1 is uniformly supplied from the peripheral portion of the circular dielectric space 18 in a plan view toward the central discharge space 4.

[0087] By lowering the conductance of the slit space 62, the pressure difference between the source gas buffer space 61 and the side space 63 increases, and the variation in the flow rate of the source gas G1 flowing through each of the multiple slit spaces 62 is reduced. Therefore, the source gas G1 is uniformly supplied toward the discharge space 4. The flow rate of the source gas G1 is adjusted by, for example, a mass flow controller (MFC) or the like provided upstream of the gas flow path 21.

[0088] Therefore, in a typical active gas generator, if the source gas G1 is not supplied uniformly, the time it takes for the source gas G1 to pass through the discharge space 4 changes, resulting in a problem of a deterioration in the generation efficiency of the active gas G2. The active gas generator 71 of the first embodiment can supply the source gas G1 uniformly, so the above problem does not occur.

[0089] (Ground electrode component E2 and active gas buffer space 68) As described above, the ground side electrode configuration portion E2, which is the second electrode configuration portion, includes the ground side dielectric film 3 and the conductive film .

[0090] As shown in FIGS. 11 and 12, the ground side dielectric film 3 has a circular shape in a plan view, and has a circular dielectric through-hole 3h in the center.

[0091] 18 and 19, the cover dielectric film 8 is circular in plan view and has a circular cover through hole 8h in the center. The cover dielectric film 8 is desirably made of the same material as the ground side dielectric film 3. This is to prevent distortion when the thermal expansion coefficients of the cover dielectric film 8 and the ground side dielectric film 3 differ. Materials with similar thermal expansion coefficients may be selected as the materials for the cover dielectric film 8 and the ground side dielectric film 3.

[0092] As shown in FIGS. 20 and 21, the conductive film 7 has a circular shape in plan view, and has a conductive film opening 7h in the center that is also circular in plan view.

[0093] The dielectric through hole 3h and the conductive film opening 7h each overlap with the active gas buffer space 68 in a planar view, and as shown in FIG. 21, the conductive film opening 7h includes the dielectric through hole 3h in a planar view and has a wider shape than the dielectric through hole 3h.

[0094] The conductive film 7 is provided on the lower surface of the ground-side dielectric film 3 such that the respective centers of the ground-side dielectric film 3 and the conductive film 7 are aligned. The diameter of the conductive film 7 is set to be approximately the same as that of the ground-side dielectric film 3, but the formation area of ​​the conductive film 7 is narrower than the formation area of ​​the ground-side dielectric film 3 because a conductive film opening 7h wider than the dielectric through opening 3h is provided in the center.

[0095] The conductive film inner boundary 7e, which is the circumferential outer periphery of the conductive film opening 7h, is the end of the conductive film 7 on the dielectric through opening 3h side, and the conductive film 7 is not formed in the region inside the conductive film inner boundary 7e. The conductive film inner boundary 7e is the electrode boundary line of the conductive film 7. Therefore, as shown in Fig. 21, the formation region A7 of the conductive film 7 on the lower surface of the ground side dielectric film 3 is the region from the outer periphery of the ground side dielectric film 3 to the conductive film inner boundary 7e.

[0096] 20 and 21, the cover dielectric film 8 is provided in a circular shape from above the lower surface of the ground-side dielectric film 3 to above the lower surface of the conductive film 7, including the conductive film inner boundary 7e. However, the cover dielectric film 8 has a cover through hole 8h at its center. That is, the outer diameter of the conductive film opening 7h of the conductive film 7 is shorter than the outer diameter of the cover dielectric film 8.

[0097] The cover through hole 8h has a shape similar to that of the dielectric through hole 3h, and the cover through hole 8h is included in the conductive film opening 7h and has a shape narrower than the conductive film opening 7h. Therefore, the cover dielectric film 8 covers the conductive film inner boundary 7e (electrode boundary line) of the conductive film 7. The lower surface of the conductive film 7 that is not covered by the cover dielectric film 8 and the upper surface of the ground conductor 6 are in contact with each other.

[0098] As shown in Figures 15 and 16, the active gas buffer space 68 provided above the ground conductor 6 has a circular shape in a plan view, and a plurality of gas outlets 69 are provided around the bottom surface 65 of the active gas buffer space 68.

[0099] 15 and 16 also show the formation region of the cover dielectric film 8. As shown in these figures, the outer periphery of the cover dielectric film 8 is substantially the same as the outer periphery of the buffer space 68 for active gas.

[0100] As shown in FIGS. 2 and 16, a shielding dielectric film 9 is provided on a bottom surface 65 of the active gas buffer space 68 .

[0101] As shown in FIGS. 22 and 23, the shielding dielectric film 9 is formed to a predetermined thickness and has a circular shape in plan view.

[0102] The shielding dielectric film 9 is provided on the bottom surface 65 of the active gas buffer space 68 in such a manner that the central positions of the active gas buffer space 68 and the shielding dielectric film 9 are aligned with each other.

[0103] As shown in FIGS. 15 and 16, the gas outlets 69 overlap with the cover dielectric film 8 in plan view, but do not overlap with the dielectric through holes 3h and the cover through holes 8h in plan view.

[0104] 16, a plurality of gas outlets 69 are provided around the bottom surface 65 of the active gas buffer space 68, penetrating the ground conductor 6. That is, the plurality of gas outlets 69 are provided in the peripheral region of the shielding dielectric film 9 in plan view.

[0105] In the active gas generator 71 of the first embodiment having such a structure, the source gas G1 is supplied from the outside of the metal housing 1 to the discharge space 4 via the gas flow passage 21 and the source gas distribution space as described above.

[0106] When the raw material gas G1 is supplied to the discharge space 4 in which the dielectric barrier discharge is occurring, the raw material gas G1 is activated to become an active gas G2, which passes through the dielectric through hole 3h and the cover through hole 8h and is introduced into the active gas buffer space 68. The active gas G2 that has entered the active gas buffer space 68 passes through a plurality of gas outlets 69 provided on the bottom surface of the active gas buffer space 68 and is supplied to the subsequent processing space.

[0107] In the active gas generator 71 of the first embodiment having such a configuration, the main dielectric space where the high-voltage side dielectric film 2, which is the dielectric film for the first electrode, and the ground side dielectric film 3, which is the dielectric film for the second electrode, face each other is the dielectric space 18. The dielectric space 18 has a circular shape in a plan view. Also, the space where the high-voltage side dielectric film 2 and the shield dielectric film 9 face each other is defined as an auxiliary dielectric space. The discharge space 4 includes a main discharge space where the power feeder 5 and the conductive film 7 overlap each other in a plan view within the dielectric space 18.

[0108] In order to form the above-mentioned main discharge space, the high-voltage side dielectric film 2 and the ground side dielectric film 3 are arranged in correspondence with each other so as to be at a certain distance in the height direction (Z direction), and the above-mentioned main discharge space of the discharge space 4 exists in the dielectric space 18 between the high-voltage side dielectric film 2 and the ground side dielectric film 3.

[0109] The discharge space 4 further includes an auxiliary discharge space 44 that is formed within the auxiliary dielectric space by the dielectric through hole 3h, the cover through hole 8h, and a part of the active gas buffer space 68 on the shield dielectric film 9.

[0110] The bottom surface area below the bottom surface 65 of the ground conductor 6 is used as a conductive film for the ground electrode set at ground potential, and a discharge voltage is applied between the power supply 5, which receives an AC voltage from the AC power source 15, and the conductive film for the ground electrode, thereby generating an auxiliary discharge space 44.

[0111] As described above, the auxiliary discharge space 44 includes the dielectric through hole 3h, the cover through hole 8h, and a part of the active gas buffer space 68. In this manner, the discharge space 4 formed in the first embodiment includes the main discharge space in the dielectric space 18 and the auxiliary discharge space 44.

[0112] In the active gas generation device 71 of the first embodiment, the paths from the auxiliary discharge space 44 to each of the plurality of gas outlets 69 are defined as active gas flow paths.

[0113] In the active gas generating device 71 of embodiment 1, the auxiliary discharge space 44, which is part of the discharge space 4, includes the dielectric through hole 3h, the cover through hole 8h, and part of the buffer space 68 for active gas, so that the volume of the active gas flow path from the auxiliary discharge space 44 to the multiple gas outlets 69 can be kept to the minimum necessary, thereby suppressing the amount of deactivation of the active gas G2.

[0114] Furthermore, the cover dielectric film 8 in the ground side electrode component E2 of the electrode unit 50 covers the conductive film inner boundary 7e, which is the electrode boundary line of the conductive film 7, within the active gas buffer space 68, and overlaps with the multiple gas outlets 69 in a planar view, thereby suppressing the surface deactivation phenomenon in which the active gas G2 disappears as the active gas G2 collides with the conductive film 7.

[0115] As a result, the active gas generation device 71 of the first embodiment can supply a high-concentration active gas G2 from the multiple gas outlets 69 to the downstream processing space.

[0116] Since the electrode unit 50 of the first embodiment has the above-described structure, the parts facing the discharge space 4 are only parts made of dielectric materials, which are insulators (high voltage side dielectric film 2, ground side dielectric film 3, cover dielectric film 8, and shield dielectric film 9). Metal materials are easily ionized when facing the discharge, and metal ions are contained in the gas, which can cause contamination.

[0117] (Housing opening 41) 2, the housing bottom 1a of the housing 1 has a housing opening 41. The housing opening 41 is provided in a region overlapping with the active gas buffer space 68 in a plan view, and penetrates the housing bottom 1a.

[0118] Therefore, the active gas G2 ejected from the plurality of gas ejection ports 69 is guided through the housing opening 41 into the processing space below.

[0119] As shown in FIG. 2, the housing opening 41 provided in the housing bottom 1a has an opening area that increases downward, and has a tapered shape having a lowermost outer peripheral edge 41L, as shown in FIGS.

[0120] In the active gas generation device 71 of the first embodiment, the housing opening 41 provided in the housing bottom 1a of the housing 1 has a tapered shape in which the opening area becomes wider toward the bottom.

[0121] Therefore, the active gas generation apparatus 71 of embodiment 1 can minimize losses caused by the active gas G2 ejected from the multiple gas outlets 69 colliding with the bottom 1a of the housing, and can supply high-concentration active gas G2 to the processing space below.

[0122] <Embodiment 2> (Problem of the first embodiment) In the active gas generation device 71 of the above-mentioned embodiment 1, the active gas G2 is supplied from the active gas buffer space 68 to the downstream processing space located below through the multiple gas outlets 69. In the following description, the active gas G2 from the multiple gas outlets 69 is defined as multiple partially activated gases.

[0123] Fig. 31 is an explanatory diagram showing a typical ejection form of active gas G2 from electrode unit 50 (51-53) in active gas generation device 71 of embodiment 1. Fig. 32 is an explanatory diagram showing a typical ejection form of active gas G2 ideally in electrode unit 50. Figs. 31 and 32 correspond to cross section AA in Fig. 1, for example. Each of Figs. 31 and 32 shows an XYZ orthogonal coordinate system.

[0124] As shown in FIG. 31, in the electrode unit 50 (51-53) provided in the active gas generation device 71 of embodiment 1, the multiple gas outlets 69 are arranged so that they move away from each other in the downward direction so as to prevent collisions between the multiple partially activated gases.

[0125] However, when the spatial pressure p0 in the active gas buffer space 68 is significantly different from the spatial pressure p1 in the subsequent processing space, for example, when {(p1 / p0)<0.5}, the multiple partially activated gases ejected from the multiple gas ejection ports 69 flow in only one direction, called a choke flow, as shown by the gas flow FGX in Figure 31, and the multiple partially activated gases each proceed in a straight line without diffusing.

[0126] The active gas generation apparatus 71 of embodiment 1 has multiple gas outlets 69 for each electrode unit 50 in order to supply a uniform active gas G2 to the downstream processing space, and further adopts a structure in which multiple electrode units 50 are provided as electrode units 51 to 53 in order to supply active gas G2 to a processing space having a relatively wide area.

[0127] However, each of the multiple partially activated gases ejected from each electrode unit 50 is supplied to the processing space in the linear gas flow FGX shown in FIG. 31, and does not become the multi-directionally diffused gas flow FGY shown in FIG. 32.

[0128] In this way, the partially activated gas ejected from each of the gas ejection ports 69 of the electrode unit 50 basically has only one directionality. Therefore, the activated gas generation device 71 of the first embodiment has a problem in that it cannot supply a uniform activated gas G2 to the processing space.

[0129] The active gas generator 75 according to the second embodiment described below aims to supply a uniform active gas G2.

[0130] (Structure of the second embodiment) 33 is an explanatory diagram showing a cross-sectional structure of the electrode unit 55 in the active gas generation device 75 of the embodiment 2. In the figure, an XYZ orthogonal coordinate system is drawn.

[0131] The overall configuration of the active gas generator 75 is similar to that of the active gas generator 71 shown in Fig. 1. Therefore, the electrode unit 55 shown in Fig. 33 corresponds to any one of the electrode units 51 to 53 in the active gas generator 75 having the overall configuration shown in Fig. 1.

[0132] That is, like the active gas generation apparatus 71 of embodiment 1, the active gas generation apparatus 75 of embodiment 2 includes electrode units 51-53 as multiple electrode units, and a conductive housing 1 that houses the electrode units 51-53 in an internal space S1 of the housing (see FIG. 8).

[0133] The electrode unit 55 of the second embodiment is characterized in that the ground conductor 6 of the electrode unit 50 of the first embodiment is replaced with a ground conductor 60.

[0134] In the following, the same components as those of the electrode unit 50 of the first embodiment are denoted by the same reference numerals, and the characteristic features of the electrode unit 55 of the second embodiment will be mainly described.

[0135] 33, the electrode unit 55 is provided below the ground-side electrode component E2 including the ground-side dielectric film 3, and includes a ground conductor 60 which is a reference potential conductor accommodated in the conductor accommodating space 6S. The ground conductor 60 is made of a conductor such as a metal.

[0136] The electrode unit 55 of the second embodiment is accommodated in the housing internal space S1 of the housing 1 with the ground conductor 60 disposed in the conductor accommodating space 6S. A source gas G1 supplied from the outside is supplied to a source gas flow space provided on the lower and side surfaces of the ground conductor 60 disposed in the conductor accommodating space 6S via a gas flow passage 21 provided in the housing bottom 1a.

[0137] (Ground conductor 60) Figures 34 and 35 are explanatory diagrams each showing a schematic structure of the ground conductor 60. Figure 34 shows the planar structure of the ground conductor 60, and Figure 35 shows the cross-sectional structure of the ground conductor 60. Each of Figures 34 and 35 shows an XYZ orthogonal coordinate system.

[0138] The ground conductor 60, which is a reference potential conductor, has a non-penetrating active gas buffer space 68 at its upper part, and the ground-side electrode component E2 including the ground-side dielectric film 3 is disposed so as to close the active gas buffer space 68. Therefore, outside the active gas buffer space 68, the lower surface of the conductive film 7 and the upper surface of the ground conductor 60 are in contact with each other.

[0139] As in the first embodiment, the housing 1 is set to the ground potential, which is the reference potential, and therefore the conductive film 7 is set to the ground potential via the housing 1 and the ground conductor 60.

[0140] The ground conductor 60 accommodated in the conductor accommodating space 6S of the housing 1 has a circular shape in a plan view as shown in FIG. 34, and has a raw material gas buffer space 61 and a slit space 62 in the end region of the bottom surface.

[0141] Similar to the ground conductor 6 in the first embodiment, a source gas flow space including a source gas buffer space 61 , a plurality of slit spaces 62 and a side space 63 is provided for the ground conductor 60 .

[0142] Therefore, the source gas G1 supplied to the gas flow passage 21 from the outside is guided to the discharge space 4 via the source gas buffer space 61, the slit space 62 and the side space 63.

[0143] Therefore, like the active gas generator 71 of the first embodiment, the active gas generator 75 of the second embodiment can supply the raw material gas G1 to the discharge space 4 spatially uniformly.

[0144] As shown in Figures 34 and 35, the active gas buffer space 68 provided above the ground conductor 60 has a circular shape in a plan view, and a plurality of gas outlets 70 are provided around the bottom surface 65 of the active gas buffer space 68.

[0145] Similar to the gas outlets 69 of the first embodiment, the gas outlets 70 overlap the cover dielectric film 8 in plan view, but do not overlap the dielectric through hole 3h and the cover through hole 8h in plan view.

[0146] 33 to 35, a plurality of gas outlets 70 are provided around the bottom surface 65 of the active gas buffer space 68, penetrating the ground conductor 60. That is, the plurality of gas outlets 70 are provided in the peripheral region of the shielding dielectric film 9 in plan view.

[0147] When the raw material gas G1 is supplied to the discharge space 4 in which the dielectric barrier discharge is occurring, the raw material gas G1 is activated to become an active gas G2, which passes through the dielectric through hole 3h and the cover through hole 8h and is introduced into the active gas buffer space 68. The active gas G2 that has entered the active gas buffer space 68 passes through a plurality of gas outlets 70 provided on the bottom surface of the active gas buffer space 68 and is supplied to the subsequent processing space.

[0148] In the active gas generation device 75 of the second embodiment, the paths from the auxiliary discharge space 44 to each of the plurality of gas outlets 70 are defined as active gas flow paths.

[0149] In the active gas generating device 75 of embodiment 2, the auxiliary discharge space 44, which is part of the discharge space 4, includes the dielectric through hole 3h, the cover through hole 8h, and part of the buffer space 68 for active gas, so that the volume of the active gas flow path from the auxiliary discharge space 44 to the multiple gas outlets 70 can be kept to the minimum necessary, thereby suppressing the amount of deactivation of the active gas G2.

[0150] Furthermore, the cover dielectric film 8 in the ground side electrode component E2 of the electrode unit 55 covers the conductive film inner boundary 7e, which is the electrode boundary line of the conductive film 7, within the active gas buffer space 68, and overlaps with the multiple gas outlets 70 in a planar view, thereby suppressing the surface deactivation phenomenon in which the active gas G2 disappears as the active gas G2 collides with the conductive film 7.

[0151] As a result, the active gas generation device 75 of the second embodiment can supply a high concentration of active gas G2 from the multiple gas outlets 70 to the downstream processing space, similarly to the first embodiment.

[0152] The housing bottom 1a of the housing 1 has a housing opening 41 in an area that overlaps with the active gas buffer space 68 in a planar view, and the active gas G2 ejected from the multiple gas outlets 70 is guided through the housing opening 41 to the processing space below.

[0153] In the active gas generation device 75 of the second embodiment, the housing opening 41 provided in the housing bottom 1a of the housing 1 has a tapered shape in which the opening area becomes wider toward the bottom.

[0154] Therefore, similar to embodiment 1, the active gas generation apparatus 75 of embodiment 2 can suppress losses caused by the active gas G2 ejected from the multiple gas outlets 70 colliding with the bottom 1a of the housing, and can supply a relatively high concentration of active gas G2 to the processing space below.

[0155] (Multiple gas outlets 70) The active gas G2 ejected from the gas outlets 70 provided in the electrode unit 55 of the second embodiment is supplied to a downstream processing space located below. Here, the active gas ejected from the gas outlets 70 is defined as a plurality of partially activated gases.

[0156] In the electrode unit 55 of the second embodiment, the partially activated gases ejected from the gas ejection ports 70 are guided downward through the housing opening 41.

[0157] Figures 36 and 37 are explanatory diagrams that typically show the cross-sectional structure of a plurality of gas jets 70, and Figures 36 and 37 respectively correspond to the DD cross-sectional structure of Figure 34. Each of Figures 36 and 37 shows an XYZ orthogonal coordinate system.

[0158] 36 and 37, the housing opening 41 includes an upper region 41a having a constant opening area in the height direction (Z direction) and a lower tapered region 41t that is a tapered region whose opening area becomes wider toward the bottom. In the housing opening 41, the lower tapered region 41t is a tapered region that is provided below the upper region 41a.

[0159] 37, a coordinate position slightly lower than the center position of the boundary line between the upper region 41a and the lower tapered region 41t is shown as a collision point P80. The collision point P80 exists within a collision region 80 described later, and is the center of the collision region 80.

[0160] In the electrode unit 55 of the first embodiment, the gas outlets 70 are provided in such a manner that they approach each other downwardly so that the partially activated gases collide with each other at a collision point P80.

[0161] The following is a detailed description of the structure of the multiple gas outlets 70. Although two gas outlets 70 are shown in Figures 36 and 37, three or more gas outlets 70 are provided as shown in Figure 34.

[0162] In the following, of the two gas outlets 70 shown in each of Figures 36 and 37, the gas outlet 70 on the right side (+X direction side) in the figures will be labeled as gas outlet 70(1), and the gas outlet 70 on the left side (-X direction side) in the figures will be labeled as gas outlet 70(2).

[0163] As described above, the gas outlets 70 are arranged in a circular shape and spaced apart from one another in a plan view. Hereinafter, a circular imaginary line connecting the centers of the gas outlets 70 will be referred to as a "imaginary gas outlet circle."

[0164] Gas outlets 70(1) and 70(2) correspond to a pair of gas outlets 70, 70 that face each other in the diametric direction on the imaginary gas outlet circle. Here, the partially active gas ejected from gas outlet 70(1) is referred to as partially active gas g2(1), and the partially active gas ejected from gas outlet 70(2) is referred to as partially active gas g2(2).

[0165] Gas nozzle 70(1) has a constant nozzle inclination A71 that exceeds "0" and is less than 90° with respect to the horizontal direction (X direction), which is the reference direction. The nozzle inclination A71 is set in the direction in which the partially activated gas g2(1) ejected from gas nozzle 70(1) heads toward collision point P80.

[0166] Like gas nozzle 70(1), gas nozzle 70(2) has a constant nozzle inclination A72 that exceeds "0" and is less than 90° with respect to the horizontal direction. The nozzle inclination A72 is set in the direction in which the partially activated gas g2(2) ejected from gas nozzle 70(2) heads toward collision point P80.

[0167] The nozzle inclinations A71 and A72 are set to the same angle, for example, 45°.

[0168] The remaining film thickness T6 of the ground conductor 60 below the active gas buffer space 68, where the gas jets 70(1) and 70(2) are provided, is set to, for example, 3 mm. The formation interval R70 between the center positions of the gas jets 70(1) and 70(2) at the top is set to, for example, 16.4 mm. The formation interval R70 corresponds to the length of the diameter Φ of the imaginary gas jet circle.

[0169] On the other hand, the total depth DTA of the housing opening 41 in the Z direction is set to, for example, 18.5 mm, and the upper depth DT1 of the upper region 41a of the housing opening 41 in the Z direction is set to, for example, 5.0 mm.

[0170] Further, the side surface of the lower tapered region 41t, which is the tapered region of the housing opening 41, expands in a conical shape along the taper inclination A41. The taper inclination A41 is set to, for example, 45°.

[0171] In the ground conductor 60 having the above-described structure, when the partially activated gases g2(1) and g2(2) are ejected from the gas ejection ports 70(1) and 70(2), the partially activated gases g2(1) and g2(2) collide at a collision point P80. As shown in Fig. 37, the depth of the collision point P80 from the surface of the ground conductor 60 is the collision depth DTX.

[0172] Even if the total number of gas nozzles 70 is "3" or more, by arranging each gas nozzle 70 along a virtual gas nozzle circle with the formation interval R70 as the diameter and setting the nozzle inclination A70 to the same value in the direction toward the collision point P80, three or more partially activated gases can collide at the same collision point P80. Note that the nozzle inclination A70 is a general term for the nozzle inclinations A71, A72, etc.

[0173] In the above-mentioned example of setting the nozzle inclinations A71 and A72, the formation interval R70, the remaining film thickness T6, and the upper depth DT1, the collision depth DTX of the collision point P80 is 5.2 mm.

[0174] Considering the diameter of the gas nozzles 70(1) and 70(2), the partially activated gases are considered to collide in a collision region 80 that spreads around the collision point P80. Therefore, in the above example, the collision region 80 is formed from the upper region of the lower tapered region 41t to the lower region of the upper region 41a. That is, the collision region 80 exists in the lower tapered region 41t or in the upper region 41a above the lower tapered region 41t.

[0175] (Active gas G2 ejection form) Figures 38 to 41 are explanatory diagrams each showing a typical ejection form of active gas G2 in housing opening 41 of electrode unit 55 of embodiment 2. Each of Figures 38 to 41 corresponds to a part of cross section DD in Figure 34. Each of Figures 38 to 41 shows an XYZ orthogonal coordinate system.

[0176] Hereinafter, the direction of partially activated gas g2(1) ejected from gas outlet 70(1) is defined as partially activated gas ejection direction V7(1), and the direction of partially activated gas g2(2) ejected from gas outlet 70(2) is defined as partially activated gas ejection direction V7(2).

[0177] As shown in FIG. 38, the partially activated gas g2(1) is ejected along the partially activated gas ejection direction V7(1) so as to reach the collision point P80, and the partially activated gas g2(2) is ejected along the partially activated gas ejection direction V7(2) so as to reach the collision point P80.

[0178] That is, the flow direction of the partially activated gas g2(1) is only in the partially activated gas ejection direction V7(1), and the flow direction of the partially activated gas g2(2) is only in the partially activated gas ejection direction V7(2).

[0179] Thereafter, as shown in FIG. 39, the partially activated gas g2(1) and the partially activated gas g2(2) collide in a collision region 80 including a collision point P80, and the partially activated gases g2(1) and g2(2) diffuse in a plurality of diffusion directions DK.

[0180] That is, the flow direction of the partially activated gas g2(1) diverges from one partially activated gas ejection direction V7(1) into multiple diffusion directions DK, and the flow direction of the partially activated gas g2(2) diverges from one partially activated gas ejection direction V7(2) into multiple diffusion directions DK. In this way, in the collision region 80, the flow directions of the multiple partially activated gases diverge from one direction into multiple diffusion directions.

[0181] As shown in FIG. 40, the intermediate supply direction DR1 of the plurality of partially activated gases is influenced by the side surface of the lower tapered region 41t and is restricted to approach the taper gradient A41.

[0182] In this way, since the collision region 80 exists in the lower tapered region 41t and in the upper region 41a above the lower tapered region 41t, the multiple diffused partially activated gases flow in a direction along the tapered shape of the side surface of the lower tapered region 41t as they head downward.

[0183] Thereafter, as shown in FIG. 41, the plurality of partially activated gases are supplied to a downstream processing space located below along a final supply direction DR2 expanding along the taper gradient A41.

[0184] (effect) The activated gas generator 75 of the second embodiment having such a structure has the same effects as those of the first embodiment, and further has the following effects unique to the second embodiment.

[0185] The active gas generator 75 of the second embodiment accommodates the electrode unit 55 having the above-mentioned ground conductor 60 in the housing internal space 1S of the housing 1. The multiple gas outlets 70 provided in the ground conductor 60 of the electrode unit 55 of the second embodiment are provided in such a manner that they approach each other downwardly so that the multiple partially activated gases collide in a collision region 80 including a collision point P80, and the collision region 80 is present within the downward tapered region 41t or above the downward tapered region 41t.

[0186] Therefore, as shown in FIG. 39, when a plurality of partially activated gases collide with each other in the collision region 80, the flow direction of each of the plurality of partially activated gases is dispersed from one direction into a plurality of diffusion directions DK.

[0187] The collision region 80 exists within the lower tapered region 41t or above the lower tapered region 41t. Therefore, as each of the diffused partially activated gases flows downward, they flow in a direction along the tapered shape of the side surface of the lower tapered region 41t, that is, in the intermediate supply direction DR1 shown in FIG.

[0188] Then, the activated gas G2 containing multiple partially activated gases flows from the lower taper region 41t toward the processing space below while diffusing in a direction along the tapered shape of the side surface of the lower taper region 41t, i.e., along the final supply direction DR2 shown in FIG.

[0189] In this manner, the plurality of partially activated gases ejected from the plurality of gas ejection ports 70 flow within the housing opening 41 as shown in FIGS.

[0190] As a result, even if the spatial pressure p0 in the active gas buffer space 68 and the spatial pressure p1 in the downstream processing space are significantly different, the active gas generation apparatus 75 of embodiment 1 can supply a uniform active gas G2 to the downstream processing space.

[0191] The multiple gas jets 70 provided in the electrode unit 55 of embodiment 2 are each formed with an inclination in a direction approaching the collision region 80 including the collision point P80 as they extend downward, and the jet inclination A70, which is the formation inclination of each of the multiple gas jets 70 with respect to the horizontal direction, which is the reference direction, is set to the same value.

[0192] Therefore, even if the number of gas outlets 70 is three or more, a plurality of partially activated gases ejected from the plurality of gas outlets 70 can collide within the same collision region 80 .

[0193] As a result, the active gas generation apparatus 75 of embodiment 2 can supply a more uniform active gas G2 toward the downstream processing space by dispersing multiple partially activated gases in multiple diffusion directions in one collision area 80.

[0194] Furthermore, the activated gas generator 75 of the second embodiment employs a structure in which a plurality of electrode units 55 are provided as electrode units 51 to 53, as shown in FIG.

[0195] Therefore, the active gas generation apparatus 75 of embodiment 2 can uniformly supply active gas G2 to the downstream processing space having a relatively wide area by ejecting multiple partial activated gases from each of multiple electrode units 51 to 53, each of which has a structure similar to that of the electrode unit 55.

[0196] <Embodiment 3> (Basic form) 42 is an explanatory diagram showing a schematic diagram of a basic aspect of an electrode unit 81 used in the active gas generator of embodiment 3. The active gas generator of embodiment 3 has an electrode unit 81 that activates a raw material gas G1 supplied to a discharge space 4 to generate an active gas G2.

[0197] As shown in the same figure, the electrode unit 81 comprises a high-voltage side electrode component E11 which is a first electrode component, and a ground side electrode component E20 which is a second electrode component provided below the high-voltage side electrode component E11.

[0198] The high-voltage side electrode component E11 which is the first electrode component includes a dielectric film F2 which is a first electrode dielectric film, and a high-voltage electrode F5 which is a first electrode conductive film provided on the upper surface of the dielectric film F2.

[0199] The ground side electrode configuration portion E20 which is the second electrode configuration portion includes a dielectric film F3 which is a dielectric film for the second electrode, and a ground electrode F6 which is a conductive film for the second electrode provided on the lower surface of the dielectric film F3.

[0200] The electrode unit 81 of the third embodiment is characterized by a structure in which a dielectric protective film FC2, which is a dielectric protective member, is provided on the lower surface of the dielectric film F2 without any gaps in close contact with the lower surface of the dielectric film F2. That is, the high-voltage side electrode configuration part E11 in the electrode unit 81 of the third embodiment is configured to include the dielectric film F2, the high-voltage electrode F5, and the dielectric protective film FC2.

[0201] A dielectric space 18 is formed between the dielectric film F2 and the dielectric film F3 via the dielectric protective film FC2. Specifically, the space where the dielectric protective film FC2 and the dielectric film F3 face each other becomes the dielectric space 18. The discharge space 4 includes a main discharge space which is a region in the dielectric space 18 where the high-voltage electrode F5 and the ground electrode F6 overlap in a plan view.

[0202] Thus, in the electrode unit 81 of embodiment 3, of the dielectric film F2 and the dielectric film F3, the dielectric film F2 is the dielectric film to be protected, and a dielectric protective film FC2 is provided on the dielectric space 18 side of the dielectric film F2, which is the dielectric film to be protected.

[0203] The constituent material of the dielectric protective film FC2 has protective properties that, when a dielectric barrier discharge occurs in the discharge space 4, it blocks irradiation of the dielectric film F2, which is the dielectric film to be protected, with ions generated by the dielectric barrier discharge, and does not chemically react with the ions.

[0204] The dielectric protective film FC2 may be made of semi-insulating silicon carbide. 5 This means that it has a dielectric strength of 1 kV / mm or more and a dielectric strength of 1 Ωcm or more.

[0205] Since the dielectric protective film FC2 has the semi-insulating properties described above, it can contribute to the dielectric barrier discharge generated in the discharge space 4. This also applies to the dielectric protective films FC3 to FC5 in the fourth to eighth embodiments described later.

[0206] The electrode unit 81 further includes an AC power supply 15 that applies an AC voltage as an applied voltage between the high-voltage electrode F5 of the high-voltage side electrode configuration part E11 and the ground electrode F6 of the ground side electrode configuration part E20. Specifically, an AC voltage is applied to the high-voltage electrode F5, and the ground electrode F6 is set to the ground potential which is the reference potential.

[0207] In the electrode unit 81 which is the basic aspect of the third embodiment, a dielectric barrier discharge is generated in the discharge space 4 when a voltage is applied from the AC power supply 15 .

[0208] In the electrode unit 81 of the basic embodiment shown in Fig. 42, the supply form of the raw material gas G1 to the discharge space 4 and the ejection form of the active gas G2 are not particularly limited. For example, in Fig. 42, the raw material gas G1 may be supplied from the left side in the figure, and the active gas G2 may be ejected from the right side in the figure.

[0209] In the active gas generator of the third embodiment having the electrode unit 81 as the basic mode, the dielectric protective film FC2, which is a dielectric protective member having the above-mentioned protective characteristics, is present between the dielectric space 18 including the discharge space 4 and the dielectric film F2, which is the dielectric film to be protected. This makes it possible to suppress the dielectric film reaction phenomenon in which the dielectric film F2 reacts with ions when a dielectric barrier discharge occurs in the discharge space 4.

[0210] As a result, the active gas generating apparatus, which is the basic aspect of the third embodiment, can generate a high-purity active gas G2 by reliably preventing the intrusion of elements of the dielectric film F2 and the like into the discharge space 4 due to the dielectric film reaction phenomenon.

[0211] In addition, the electrode unit 81 does not require any changes to the constituent materials of the dielectric films F2 and F3, and can be constructed simply by adding the dielectric protective film FC2, so that the manufacturing process of the electrode unit 81 does not become complicated.

[0212] In the active gas generating apparatus of the basic aspect of embodiment 3, the dielectric protective film FC2 is provided closely and without gaps on the underside of the dielectric film F2, which is the dielectric film to be protected, so that active gas G2 can be obtained with high precision without creating any space other than the discharge space 4 where a discharge phenomenon occurs between the dielectric film F2 and the dielectric film F3.

[0213] The high-voltage side electrode component E11 of the electrode unit 81 includes a dielectric protective film FC2. The active gas generator of the basic mode of the third embodiment having this electrode unit 81 can activate the source gas G1 supplied to the discharge space 4 in the dielectric space 18 and generate the active gas G2 by applying an AC voltage as an applied voltage from the AC power source 15 between the high-voltage electrode F5 and the ground electrode F6.

[0214] (Second aspect) 43 is an explanatory diagram showing the concept of an electrode unit 810 used in the active gas generator of the second aspect of the embodiment 3. An XYZ orthogonal coordinate system is shown in the figure.

[0215] An electrode unit 810 shown in Fig. 43 has a conceptual structure in which the electrode unit 81 of the basic mode shown in Fig. 42 is applied to the electrode unit 55 of embodiment 2. In the electrode unit 810, the high-voltage side dielectric film 2 is used as the dielectric film F2, the ground side dielectric film 3 is used as the dielectric film F3, and the power feeder 5 is used as the high-voltage electrode F5. Note that a conductive film 7 (Figs. 20 and 21) not shown is used as the ground electrode F6.

[0216] As shown in the figure, in an electrode unit 810 showing the concept of the second aspect, a dielectric protective film FC2 is provided in close contact with the lower surface of the high-voltage side dielectric film 2. There is no limitation on the method of forming the dielectric protective film FC2 in the electrode unit 810. The electrode unit 811 described below is an embodiment of the electrode unit 810 in a practical structure.

[0217] 44 is an explanatory diagram showing a cross-sectional structure of an electrode unit 811 used in an active gas generator according to a second aspect of embodiment 3. An XYZ orthogonal coordinate system is shown in the figure.

[0218] An electrode unit 811 shown in Fig. 44 is a practical structure in which the electrode unit 81 of the basic form shown in Fig. 42 is applied to the electrode unit 55 of embodiment 2. In the electrode unit 811, the high-voltage side dielectric film 2 is used as the dielectric film F2, the ground side dielectric film 3 is used as the dielectric film F3, and the power feeder 5 is used as the high-voltage electrode F5. Note that a conductive film 7 (Figs. 20 and 21) not shown is used as the ground electrode F6.

[0219] In this manner, the active gas generator having a practical structure in the second aspect of the third embodiment is an active gas generator having the electrode unit 811.

[0220] The overall configuration of the second aspect of the active gas generation apparatus of the third embodiment is similar to that of the active gas generation apparatus 71 shown in Fig. 1. Therefore, the electrode unit 811 shown in Fig. 44 corresponds to any one of the electrode units 51 to 53 in the active gas generation apparatus 75 having the overall configuration shown in Fig. 1.

[0221] That is, the second aspect of the active gas generation apparatus of embodiment 3, like the active gas generation apparatus 71 of embodiment 1, comprises electrode units 51-53 as multiple electrode units, and a conductive housing 1 that houses the electrode units 51-53 in an internal space S1 of the housing (see Figure 8).

[0222] In the following, structures similar to those of electrode unit 50 (51 to 53) of embodiment 1 or those similar to those of electrode unit 55 of embodiment 2 will be given the same symbols and explanations will be omitted as appropriate, and the description will focus on the characteristic parts of electrode unit 811.

[0223] 44, electrode unit 811, like electrode unit 50 (51-53) of embodiment 1, has a lower surface of high-voltage-side dielectric film 2 which has recess bottom surface 26 and convex bottom surface 23 provided around the recess bottom surface. Convex bottom surface 23 is set to be formed at a higher position in the height direction along the +Z direction than recess bottom surface 26. A dielectric protective film FC2 is provided on recess bottom surface 26, and no dielectric protective film FC2 is provided on convex bottom surface 23.

[0224] The electrode unit 811 includes a dielectric film support member 10B having a support surface 10F serving as a dielectric support surface that supports the convex bottom surface 23 of the high voltage side dielectric film 2 from below.

[0225] Fig. 45 is an explanatory diagram showing a schematic planar structure of the dielectric film support member 10B. The XYZ orthogonal coordinate system is shown in the figure. Note that a groove 16 and an O-ring 17, which will be described later, are omitted in Fig. 45.

[0226] 45, the dielectric film support member 10B has a circular shape with a central opening 100 in the center in a plan view. A step structure consisting of step portions 103, 102, and a peripheral upper surface 101 is provided in an annular shape around the central opening 100. The upper surface of step portion 103 serves as a fixing auxiliary surface 10XF, and the upper surface of step portion 102 serves as a support surface 10F. Step portion 102 (support surface 10F) is located on the outer periphery of step portion 103 (10XF), and a plurality of through holes 10h are provided in a circular pattern on the peripheral upper surface 101 on the outer periphery side of step portion 102.

[0227] The fixing auxiliary surface 10XF is provided in an annular shape along the outer periphery of the central opening 100, and the support surface 10F is provided in an annular shape along the outer periphery of the fixing auxiliary surface 10XF.

[0228] On the other hand, as explained in embodiment 1 with reference to Figures 9 and 10, the high-voltage side dielectric film 2 has a recess bottom surface 26 which is circular in plan view, and a convex portion bottom surface 23 whose bottom surface around the recess bottom surface 26 is annular in plan view.

[0229] As shown in Figures 44 and 45, the dielectric film support member 10B further has a fixing auxiliary surface 10XF which serves as a protective member fixing auxiliary surface located below the peripheral area of ​​the dielectric protective film FC2 provided on the bottom surface 26 of the recess of the high-voltage side dielectric film 2.

[0230] Like the electrode units 50 and 55, the electrode unit 811 is provided with a dielectric film suppression member 11 that suppresses the high-voltage side dielectric film 2, which is the dielectric film for the first electrode, from above, and the dielectric film suppression member 11 does not overlap with the power supply 5 in a planar view.

[0231] In the dielectric film support member 10B, an O-ring 17 that functions as an elastic member is inserted between the fixing auxiliary surface 10XF, which serves as the protective member fixing auxiliary surface, and the lower surface of the dielectric protective film FC2. The elastic force of the O-ring 17 brings the recess bottom surface 26 of the high-voltage side dielectric film 2 into close contact with the upper surface of the dielectric protective film FC2. This point will be described in detail below.

[0232] The dielectric film support member 10B has a groove 16 that is provided in the fixing auxiliary surface 10XF in a circular shape in plan view. An O-ring 17 that is circular in plan view is provided in the groove 16. In this manner, the electrode unit 811 includes the dielectric film support member 10B having the groove 16 and the O-ring 17.

[0233] The O-ring 17 provided in the groove 16 is usually used as a sealant for sealing against fluids such as gas. The electrode unit 811 uses the O-ring 17 as an elastic member. Specifically, the elastic force generated when the O-ring 17 is deformed is utilized.

[0234] 44, the O-ring 17 is deformed by being sandwiched between the dielectric film support member 10B and the high-voltage side dielectric film 2 via the dielectric protective film FC2. The upper surface of the dielectric protective film FC2 is brought into close contact with the lower surface of the high-voltage side dielectric film 2 by the elastic force of the O-ring 17 functioning as an elastic member.

[0235] The electrode unit 811 used in the second aspect of embodiment 3, like the basic aspect, can generate high-purity active gas G2 by reliably preventing the intrusion of elements of the dielectric film F2 and the like into the discharge space 4 due to the dielectric film reaction phenomenon.

[0236] In addition, the electrode unit 811 does not require any change to the materials constituting the high voltage side dielectric film 2 and the ground side dielectric film 3, and the main changes from the electrode unit 55 are the improvement from the dielectric film support member 10 to the dielectric film support member 10B, and the addition of the dielectric protective film FC2. Therefore, the manufacturing process of the electrode unit 811 does not become complicated.

[0237] For example, consider a case where, in the structure of electrode unit 55, no dielectric protective film FC2 is provided and a constituent material having the above protective properties is used as the constituent material of high-voltage side dielectric film 2. Here, the high-voltage side dielectric film 2 using the constituent material having the above protective properties is referred to as "high-voltage side dielectric film 2X." Since high-voltage side dielectric film 2X has a relatively complex structure having power feeder placement recess 28, protrusion bottom surface 23, and recess bottom surface 26, if the material having the above protective properties is difficult to process, the processing for obtaining high-voltage side dielectric film 2X will be relatively complex.

[0238] On the other hand, the dielectric protective film FC2 in the electrode unit 811 has a relatively simple flat plate structure, and only a relatively simple manufacturing process is added in which the dielectric protective film FC2 is disposed on the fixing auxiliary surface 10XF of the dielectric film support member 10B via the O-ring 17. Therefore, the manufacturing process of the electrode unit 811 does not become complicated.

[0239] In addition, since the electrode unit 811 has a dielectric protective film FC2 on the underside of the high-voltage side dielectric film 2 which does not have a through hole, the dielectric protective film FC2 can completely protect the high-voltage side dielectric film 2 from the dielectric barrier discharge in the discharge space 4.

[0240] The second aspect of the active gas generator of the third embodiment having such an electrode unit 811 provides the same effects as the basic aspect of the active gas generator having the electrode unit 81, and further provides the following unique effects.

[0241] In a second mode of the active gas generator of the third embodiment, the dielectric film support member 10B of the electrode unit 811 supports the convex bottom surface 23 of the ground side dielectric film 3 from below with a support surface 10F serving as a dielectric support surface. Furthermore, the elastic force of the O-ring 17 functioning as an elastic member brings the concave bottom surface 26 of the high voltage side dielectric film 2 and the upper surface of the dielectric protective film FC2 into close contact with each other.

[0242] Therefore, the second aspect of the active gas generation apparatus of embodiment 3 can stably fix the dielectric protection film FC2, which is in close contact with the high-pressure side dielectric film 2, with a relatively simple structure of providing a dielectric film support member 10B and an O-ring 17.

[0243] In addition, the second aspect of the active gas generation apparatus of embodiment 3 utilizes the elastic force of the O-ring 17, thereby enabling improvement in the accuracy of adhesion between the bottom surface 26 of the recess in the high-pressure side dielectric film 2 and the upper surface of the dielectric protective film FC2 with a relatively simple structure.

[0244] Furthermore, in a second mode of the active gas generation device of the third embodiment having the electrode unit 811 shown in Figures 44 and 45, the gas outlets 70 have the same characteristics as the electrode unit 55 of the second embodiment. That is, the gas outlets 70 are provided in such a manner that they approach each other downward so that the partially activated gases collide with each other in a collision region 80, and the collision region 80 is present within the lower tapered region 41t (see Figures 36 and 37) or above the lower tapered region 41t.

[0245] Therefore, the second aspect of the active gas generation apparatus of the third embodiment can supply a uniform active gas G2 to the downstream processing space, similarly to the active gas generation apparatus of the second embodiment.

[0246] In the third embodiment, the electrode unit 811 using the O-ring 17 is shown as an example of an actual structure for realizing the electrode unit 810, but the electrode unit 810 may be realized by other structures. For example, the first and second modified examples described below are conceivable.

[0247] As a first modified example, a structure in which a general spring is used instead of the O-ring 17 between the fixing auxiliary surface 10XF of the dielectric film support member 10B and the dielectric protective film FC2 to provide close contact therebetween is considered.

[0248] As a second modified example, a structure is conceivable in which a magnetic thin film region is provided at the end of the dielectric protective film FC2 using a magnetic material such as iron as a constituent material, and the magnetic thin film region is attracted by the magnetic force of a magnet provided above the magnetic thin film region of the dielectric protective film FC2 to hold the dielectric protective film FC2. The magnetic thin film region can be formed using a sputtering method or the like. To realize the second modified example, a mode is conceivable in which a magnet is provided in the overlapping region in plan view with the fixing auxiliary surface 10XF in the dielectric film suppressing member 11 and the pressing member 12 of the electrode unit 811 shown in FIG. 44.

[0249] The magnetic thin film region may be provided on either the side facing the discharge space 4 or the side not facing it, but it is preferable to provide it in a position where it will not collide with ions and electrons generated by the dielectric barrier discharge.

[0250] <Fourth embodiment> 46 is an explanatory diagram showing a schematic diagram of a basic aspect of an electrode unit 82 used in the active gas generator of embodiment 4. The active gas generator of embodiment 4 has an electrode unit 82 that activates a raw material gas G1 supplied to a discharge space 4 to generate an active gas G2.

[0251] As shown in the same figure, the electrode unit 82 comprises a high-voltage side electrode component E10 which is a first electrode component, and a ground side electrode component E21 which is a second electrode component provided below the high-voltage side electrode component E10.

[0252] The high-voltage side electrode component E10 which is the first electrode component includes a dielectric film F2 which is a first electrode dielectric film, and a high-voltage electrode F5 which is a first electrode conductive film provided on the upper surface of the dielectric film F2.

[0253] The ground side electrode configuration portion E21 which is the second electrode configuration portion includes a dielectric film F3 which is a dielectric film for the second electrode, and a ground electrode F6 which is a conductive film for the second electrode provided on the lower surface of the dielectric film F3.

[0254] The electrode unit 82 of the fourth embodiment is characterized by a structure in which a dielectric protective film FC3, which is a dielectric protective member, is provided on the upper surface of the dielectric film F3 without any gaps in close contact with the upper surface of the dielectric film F3. That is, the ground side electrode configuration portion E21 in the electrode unit 82 of the fourth embodiment is configured to include the dielectric film F3, the ground electrode F6, and the dielectric protective film FC3.

[0255] A dielectric space 18 is provided between the dielectric film F2 and the dielectric film F3 via the dielectric protective film FC3. Specifically, in the electrode unit 82, the dielectric protective film FC3 is provided in close contact with the upper surface of the dielectric film F3, and the space where the dielectric film F2 and the dielectric protective film FC3 face each other becomes the dielectric space 18. Within this dielectric space 18, a discharge space 4 is formed, which includes a main discharge space that is a region where the high-voltage electrode F5 and the ground electrode F6 overlap in a plan view.

[0256] Thus, in the electrode unit 82 of embodiment 4, of the dielectric film F2 and the dielectric film F3, the dielectric film F3 is the dielectric film to be protected, and a dielectric protective film FC3 is provided on the dielectric space 18 side of the dielectric film F3 which is the dielectric film to be protected.

[0257] Like the dielectric protective film FC2, the constituent material of the dielectric protective film FC3 has protective properties of blocking irradiation of the dielectric film F3, which is the dielectric film to be protected, with ions generated by the dielectric barrier discharge when a dielectric barrier discharge occurs in the discharge space 4, and not chemically reacting with the ions.

[0258] The electrode unit 82 further includes an AC power supply 15 that applies an AC voltage as an applied voltage between the high-voltage electrode F5 of the high-voltage side electrode configuration part E10 and the ground electrode F6 of the ground side electrode configuration part E21. Specifically, an AC voltage is applied to the high-voltage electrode F5, and the ground electrode F6 is set to the ground potential, which is the reference potential.

[0259] In the electrode unit 82 which is the basic aspect of the fourth embodiment, a dielectric barrier discharge is generated in the discharge space 4 when a voltage is applied from the AC power supply 15 .

[0260] In the electrode unit 82 of the basic embodiment shown in Fig. 46, the supply form of the raw material gas G1 to the discharge space 4 and the ejection form of the active gas G2 are not particularly limited. For example, in Fig. 46, the raw material gas G1 may be supplied from the left side in the figure, and the active gas G2 may be ejected from the right side in the figure.

[0261] In the active gas generator of the fourth embodiment having the electrode unit 82, the dielectric protective film FC3, which is a dielectric protective member having the above-mentioned protective characteristics, is present between the dielectric space 18 including the discharge space 4 and the dielectric film F3, which is the dielectric film to be protected. This makes it possible to suppress the dielectric film reaction phenomenon in which the dielectric film F3 reacts with ions when a dielectric barrier discharge occurs in the discharge space 4.

[0262] As a result, the active gas generating apparatus, which is the basic aspect of the fourth embodiment, can generate a high-purity active gas G2 by reliably preventing the intrusion of elements of the dielectric film F3 and the like into the discharge space 4 due to the dielectric film reaction phenomenon.

[0263] In addition, the electrode unit 82 does not require any changes to the constituent materials of the dielectric films F2 and F3, and can be constructed simply by adding the dielectric protective film FC3, so that the manufacturing process of the electrode unit 82 does not become complicated.

[0264] In the active gas generating apparatus of the basic aspect of embodiment 4, the dielectric protective film FC3 is provided closely and without gaps on the upper surface of the dielectric film F3, which is the dielectric film to be protected, so that active gas G2 can be obtained with high precision without creating any space other than the discharge space 4 where a discharge phenomenon occurs between the dielectric film F2 and the dielectric film F3.

[0265] The ground side electrode component E21 of the electrode unit 82 includes a dielectric protective film FC3. The active gas generator of the fourth embodiment having this electrode unit 82 can activate the source gas G1 supplied to the discharge space 4 in the dielectric space 18 and generate the active gas G2 by applying a voltage between the high voltage electrode F5 and the ground electrode F6.

[0266] The dielectric protection member represented by the dielectric protection film FC3 can exhibit the above-mentioned effects if it is provided on the dielectric space 18 side of the dielectric film to be protected, which is at least one of the dielectric films F2 and F3.

[0267] Therefore, the electrode unit 82 may be expanded to further provide a dielectric protective film FC2 on the lower surface of the dielectric film F2. Similarly, the electrode unit 81 of the third embodiment may be expanded to further provide a dielectric protective film FC3 on the upper surface of the dielectric film F3.

[0268] <Embodiment 5> (Basic form) 47 is an explanatory diagram showing a schematic diagram of a basic aspect of an electrode unit 83 used in the active gas generator of embodiment 5. The active gas generator of embodiment 5 has an electrode unit 83 that activates a raw material gas G1 supplied to a discharge space 4 to generate an active gas G2.

[0269] Hereinafter, structures similar to those of the electrode unit 81 of the third embodiment will be denoted by the same reference numerals and explanations thereof will be omitted as appropriate, and the characteristic parts of the electrode unit 83 will be mainly explained.

[0270] As shown in the same figure, the electrode unit 83 includes a high-voltage side electrode component E12 which is a first electrode component, and a ground side electrode component E20 which is a second electrode component provided below the high-voltage side electrode component E12.

[0271] The high-voltage side electrode component E12 which is the first electrode component includes a dielectric film F2 which is a first electrode dielectric film, and a high-voltage electrode F5 which is a first electrode conductive film provided on the upper surface of the dielectric film F2.

[0272] The ground side electrode configuration portion E20 which is the second electrode configuration portion includes a dielectric film F3 which is a dielectric film for the second electrode, and a ground electrode F6 which is a conductive film for the second electrode provided on the lower surface of the dielectric film F3.

[0273] The electrode unit 83 of the fifth embodiment is characterized in that a dielectric protective film FC4 serving as a dielectric protective member is provided below a dielectric film F2 serving as a first electrode dielectric film with a protective member space 40 interposed therebetween.

[0274] In this way, the high-voltage side electrode component E12 in the electrode unit 83 of embodiment 5 is composed of a dielectric film F2, a high-voltage electrode F5 and a dielectric protective film FC4, and the dielectric protective film FC4 is provided with a protective member space 40 which forms a minute gap between it and the dielectric film F2, which is the dielectric film to be protected.

[0275] A dielectric space 18 is provided between the dielectric film F2 and the dielectric film F3 via the dielectric protective film FC4. Specifically, the space where the dielectric protective film FC4 and the dielectric film F3 face each other becomes the dielectric space 18. Within this dielectric space 18, a discharge space 4 is formed, which includes a main discharge space that is a region where the high voltage electrode F5 and the ground electrode F6 overlap in a plan view.

[0276] Thus, in the electrode unit 83 of embodiment 5, of the dielectric film F2 and the dielectric film F3, the dielectric film F2 is the dielectric film to be protected, and a dielectric protective film FC4 is provided on the dielectric space 18 side of the dielectric film F2, which is the dielectric film to be protected.

[0277] The constituent material of the dielectric protective film FC4, like the dielectric protective film FC2 of embodiment 3 and the dielectric protective film FC3 of embodiment 4, has protective properties of blocking irradiation of the dielectric film F2, which is the dielectric film to be protected, with ions generated by the dielectric barrier discharge when a dielectric barrier discharge occurs in the discharge space 4, and not chemically reacting with the ions.

[0278] In the electrode unit 83 which is the basic aspect of the fifth embodiment, a dielectric barrier discharge is generated in the discharge space 4 when a voltage is applied from the AC power supply 15 .

[0279] In this case, the applied voltage, the discharge space 4, and the protective member space 40 are set so as to satisfy discharge generation conditions that, when the applied voltage is applied, a dielectric barrier discharge occurs in the discharge space 4, but a dielectric barrier discharge does not occur in the protective member space 40. The discharge generation conditions will be described below.

[0280] In general, the voltage required to generate a dielectric barrier discharge is such that, if the pressure and gas type are constant, the longer the discharge distance (gap length), the higher the voltage required. This property is called Paschen's law.

[0281] For example, in nitrogen gas at a pressure of 400 Torr, according to Paschen's law, the discharge initiation voltage when the discharge distance is 1 mm is approximately 2900 V, and when the discharge distance is 2.5 mm, it is approximately 6600 V. On the other hand, the electric field strength at which discharge begins is 2900 V / mm for the former and 2640 V / mm for the latter, and it is characterized by the fact that the electric field strength required for discharge decreases as the discharge distance becomes longer.

[0282] The dielectric barrier discharge employed by the electrode unit 83 is called a parallel plate type, and is characterized in that the electric field strength applied to the protective material space 40 is the same as that of the discharge space 4. Due to this characteristic, it is possible to intentionally increase the discharge start electric field strength by shortening the discharge distance (gap length) in the protective material space 40, and selectively limit the area in which discharge occurs to only the discharge space 4.

[0283] Here, let the applied voltage VP be the voltage applied from the AC power supply 15, the gap length Δ4 be the gap length of the discharge space 4, and the gap length Δ40 be the gap length of the protection member space 40. Further, let the discharge start electric field strength E4 be the electric field strength required for the dielectric barrier discharge to start occurring in the discharge space 4, the discharge start electric field strength E40 be the electric field strength required for the dielectric barrier discharge to start occurring in the protection member space 40, and the electric field strength EX be the electric field strength having the same value common to both the discharge space 4 and the protection member space 40.

[0284] In this case, among the electric field strength EX, the discharge start electric field strength E4, and the discharge start electric field strength E40, {EX < E40} and {EX ≥ E4} are the discharge generation requirements. If these discharge generation requirements are satisfied, dielectric barrier discharge occurs in the discharge space 4, and dielectric barrier discharge does not occur in the protection member space 40.

[0285] By setting the gap length Δ40 to be sufficiently shorter than the gap length Δ4, it can be set to {E40 >> E4}. Therefore, it is possible to relatively easily set the applied voltage VP, the gap length Δ4, and the gap length Δ40 that satisfy the above-described discharge generation requirements ({EX < E40} and {EX ≥ E4}).

[0286] In the electrode unit 83 of the basic mode shown in FIG. 47, the supply form of the raw material gas G1 to the discharge space 4 and the ejection form of the active gas G2 are not particularly limited. For example, in FIG. 47, the raw material gas G1 may be supplied from the left side in the figure, and the active gas G2 may be ejected from the right side in the figure.

[0287] In the active gas generation device of Embodiment 5 having the electrode unit 83 as the basic mode, between the dielectric space 18 including the discharge space 4 and the dielectric film F2 serving as the dielectric film to be protected, there is a dielectric protection film FC4 which is a dielectric protection member having the above-described protection characteristics. Therefore, it is possible to suppress the dielectric film reaction phenomenon in which the dielectric film F2 reacts with ions when dielectric barrier discharge occurs in the discharge space 4.

[0288] As a result, the active gas generating apparatus, which is the basic aspect of the fifth embodiment, can generate high-purity active gas G2 by reliably preventing the intrusion of elements of the dielectric film F2 and the like into the discharge space 4 due to the dielectric film reaction phenomenon.

[0289] In addition, the electrode unit 83 does not require any change to the constituent materials of the dielectric films F2 and F3, and can be constructed simply by adding the dielectric protective film FC4, so that the manufacturing process of the electrode unit 83 does not become complicated.

[0290] In the basic aspect of the active gas generation apparatus of embodiment 5, the dielectric protective film FC4, which is a dielectric protective member, has a protective member space 40 between it and the dielectric film F2, which is the dielectric film to be protected, so that the dielectric protective film FC4 and the dielectric film F2 do not need to be closely attached to each other, thereby simplifying the apparatus configuration.

[0291] Furthermore, by setting the gap length Δ40 of the protective member space 40 to a length that is sufficiently shorter than the gap length Δ4 of the discharge space 4, it is possible to relatively easily set the applied voltage, the discharge space 4, and the protective member space 40 that satisfy the above-mentioned discharge generation requirements.

[0292] As a result, the active gas generation device of embodiment 5 can accurately generate active gas G2 between the dielectric film F2 and the dielectric film F3 without creating a space other than the discharge space 4 where a discharge phenomenon occurs.

[0293] The high-voltage side electrode configuration part E12 of the electrode unit 83 includes a dielectric protective film FC4, and the voltage applied between the dielectric films F2 and F3 of the electrode unit 83 satisfies the above-mentioned discharge generation requirements. Therefore, the active gas generator of the fifth embodiment having the electrode unit 83 can generate a dielectric barrier discharge in the discharge space 4 including the main discharge space formed between the dielectric protective film FC4 and the dielectric film F3 without generating a dielectric barrier discharge in the protective member space 40 formed between the dielectric film F2 and the dielectric protective film FC4.

[0294] As a result, the active gas generation device of the fifth embodiment can activate the raw material gas G1 supplied to the discharge space 4 to generate the active gas G2.

[0295] (Second aspect) 48 is an explanatory diagram showing a schematic concept of an electrode unit 830 used in an active gas generator according to a second aspect of embodiment 5. An XYZ orthogonal coordinate system is shown in the drawing.

[0296] The electrode unit 830 shows a characteristic portion of a conceptual structure in which the electrode unit 83 of the basic aspect shown in FIG. 47 is applied to the electrode unit 55 of the second embodiment.

[0297] As shown in the figure, in an electrode unit 830 showing a characteristic part of the concept of the second aspect, a dielectric protective film FC4 is provided on the lower surface side of the high voltage side dielectric film 2 via a protective member space 40 which serves as a minute gap.

[0298] The electrode unit 830 includes a dielectric film support member M10 having a support surface 10F serving as a dielectric support surface that supports the peripheral region of the dielectric film F2 from below, and a support surface 10YF serving as a protective member support surface that supports the peripheral region of the dielectric protective film FC4 from below.

[0299] The electrode unit 831 described below is an embodiment of the electrode unit 830 shown in FIG. 48 in a practical structure.

[0300] Fig. 49 is an explanatory diagram showing a cross-sectional structure of an electrode unit 831 used in an active gas generator according to a second aspect of embodiment 5. Fig. 50 is an explanatory diagram showing a schematic detailed structure of a region of interest R3 in Fig. 49. Each of Figs. 49 and 50 shows an XYZ orthogonal coordinate system.

[0301] An electrode unit 831 shown in Fig. 49 is a practical structure in which the electrode unit 83 of the basic form shown in Fig. 47 is applied to the electrode unit 55 of embodiment 2. In the electrode unit 831, the high-voltage side dielectric film 2 is used as the dielectric film F2, the ground side dielectric film 3 is used as the dielectric film F3, the power feeder 5 is used as the high-voltage electrode F5, and the dielectric film support member 10C is used as the dielectric film support member M10. Note that a conductive film 7 (not shown in Figs. 20 and 21) is used as the ground electrode F6.

[0302] In this manner, the active gas generator according to the second aspect of the fifth embodiment is an active gas generator having the electrode unit 831.

[0303] The overall configuration of the second aspect of the active gas generation apparatus of the fifth embodiment is similar to that of the active gas generation apparatus 71 shown in Fig. 1. Therefore, the electrode unit 831 shown in Fig. 49 corresponds to any one of the electrode units 51 to 53 in the active gas generation apparatus 75 having the overall configuration shown in Fig. 1.

[0304] That is, the second aspect of the active gas generation apparatus of embodiment 5, like the active gas generation apparatus 71 of embodiment 1, comprises electrode units 51-53 as multiple electrode units, and a conductive housing 1 that houses the electrode units 51-53 in an internal space S1 of the housing (see Figure 8).

[0305] In the following, structures similar to those of electrode unit 50 (51 to 53) of embodiment 1 or those similar to those of electrode unit 55 of embodiment 2 will be given the same symbols and explanations will be omitted as appropriate, and the description will focus on the characteristic parts of electrode unit 831.

[0306] As shown in Fig. 49, electrode unit 831, like electrode unit 50 (51-53) of embodiment 1, has a lower surface of high-voltage-side dielectric film 2 which has recess bottom surface 26 and convex bottom surface 23 provided around the periphery of the recess bottom surface. Convex bottom surface 23 is set to be formed at a higher position in the height direction along the +Z direction than recess bottom surface 26. A dielectric protective film FC4 is provided below recess bottom surface 26 with protective member space 40 interposed therebetween (see Fig. 50), and no dielectric protective film FC4 is provided on convex bottom surface 23.

[0307] The dielectric protective film FC4 in the electrode unit 831 has a flat plate-like structure, and the planar shape of the dielectric protective film FC4 in the XY plane is set to a circular shape slightly wider than the recess bottom surface 26 shown in FIGS.

[0308] 50, the conductive film 7 is omitted. The ground-side dielectric film 3 is provided on the ground conductor 60 via the conductive film 7 (not shown).

[0309] 50, a dielectric protective film FC4 is disposed on the lower surface side of the high-voltage side dielectric film 2 via a protective member space 40 having a minute gap length Δ40. A discharge space 4 having a gap length Δ4 is ​​formed between the dielectric protective film FC4 and the ground side dielectric film 3. A power feeder 5 is provided on the upper surface of the high-voltage side dielectric film 2, and a ground conductor 60 is provided on the lower surface side of the ground side dielectric film 3.

[0310] In the electrode unit 831, in order to satisfy the above-mentioned discharge generation requirements, the gap length Δ40 which is the discharge distance in the protective member space 40 is set to be sufficiently shorter than the gap length Δ4 which is the discharge distance in the discharge space 4.

[0311] The electrode unit 831 includes a dielectric film support member 10C having a support surface 10F serving as a dielectric support surface that supports the convex bottom surface 23 of the high voltage side dielectric film 2 from below.

[0312] 51 is an explanatory diagram showing a schematic planar structure of the dielectric film support member 10C, in which an XYZ orthogonal coordinate system is depicted.

[0313] 51, the dielectric film support member 10C has a circular shape with a central opening 100 in the center in a plan view. A step structure consisting of a step portion 104, a step portion 102, and a peripheral upper surface 101 is provided in an annular shape around the central opening 100. The upper surface of the step portion 104 becomes the support surface 10YF, and the upper surface of the step portion 102 becomes the support surface 10F. The step portion 102 (support surface 10F) is located on the outer periphery of the step portion 104 (10YF), and a plurality of through holes 10h are provided in a circular shape on the peripheral upper surface 101 on the outer periphery side of the step portion 102.

[0314] The support surface 10YF is provided in an annular shape along the outer periphery of the central opening 100, and the support surface 10F is provided in an annular shape along the outer periphery of the support surface 10YF.

[0315] As shown in FIGS. 49 and 51, the dielectric film support member 10C further has a support surface 10YF serving as a protective member support surface that supports the peripheral region of the dielectric protective film FC4 from below.

[0316] Therefore, by supporting the peripheral region of the dielectric protective film FC4 from below by the supporting surface 10YF, the position of the dielectric protective film FC4 in the height direction along the Z direction can be fixed.

[0317] In addition, by setting the inner diameter of the step portion 102 to be slightly wider than the radius of the dielectric protective film FC4, which has a circular planar shape, the movement of the dielectric protective film FC4 in the XY plane can be restricted with high precision.

[0318] Like the electrode units 50 and 55, the electrode unit 831 is provided with a dielectric film suppression member 11 that suppresses the high-voltage side dielectric film 2, which is the dielectric film for the first electrode, from above, and the dielectric film suppression member 11 does not overlap with the power supply 5 in a planar view.

[0319] In the dielectric film support member 10C, the support surface 10F, which is the dielectric support surface, is formed at a higher position in the height direction than the support surface 10YF, which is the protective member support surface, and the difference in height Δd between the support surfaces 10F and 10YF is set so that a protective member space 40 of gap length Δ40 is formed between the lower surface of the high-pressure side dielectric film 2 and the upper surface of the dielectric protective film FC4.

[0320] For example, if the dielectric protective film FC4 has a uniform film thickness dC4, and the length of the recess bottom surface 26 in the depth direction from the protrusion bottom surface 23 in the -Z direction is taken as the protrusion length t26, the difference value Δd is set to a length that satisfies {Δd=dC4+t26+Δ40}. In this case, it is necessary to set the gap length Δ40 of the protective member space 40 sufficiently shorter than the gap length Δ4 of the discharge space 4 so as to satisfy the above-mentioned discharge occurrence requirements. The film thicknesses of the dielectric protective films FC2 to FC5 including the above-mentioned dielectric protective film FC4 are set to 1 mm or less.

[0321] The electrode unit 831 used in the second aspect of embodiment 5, like the basic aspect, can generate high-purity active gas G2 by reliably preventing the intrusion of elements of the dielectric film F2 and the like into the discharge space 4 due to the dielectric film reaction phenomenon.

[0322] In addition, the electrode unit 831 does not require any change to the constituent materials of the high-voltage side dielectric film 2 and the ground side dielectric film 3, and the main changes from the electrode unit 55 are the improvement from the dielectric film support member 10 to a dielectric film support member 10C, and the addition of a dielectric protective film FC4. Therefore, like the manufacturing process of the electrode unit 811, the manufacturing process of the electrode unit 831 does not become complicated.

[0323] In addition, since the electrode unit 831 has a dielectric protective film FC4 below the high-voltage side dielectric film 2 which does not have a through hole, the dielectric protective film FC4 can completely protect the high-voltage side dielectric film 2 from the dielectric barrier discharge in the discharge space 4.

[0324] The second aspect of the active gas generator of the fifth embodiment having such an electrode unit 831 provides the same effects as the basic aspect of the active gas generator having the electrode unit 83, and further provides the following unique effects.

[0325] In an electrode unit 831 of an active gas generating apparatus which is a second aspect of embodiment 5, a dielectric film support member 10C supports the peripheral area of ​​the high-pressure side dielectric film 2 from below with a support surface 10F which is a dielectric support surface, and also supports the peripheral area of ​​the dielectric protective film FC4 from below with a support surface 10YF which is a protective member support surface.

[0326] Furthermore, in the electrode unit 831, the difference value Δd between the support surface 10F and the support surface 10YF is set so that a protective member space 40 with a gap length Δ40 is formed between the lower surface of the high-voltage side dielectric film 2 and the upper surface of the dielectric protective film FC4.

[0327] Therefore, the active gas generation device according to the second aspect of the fifth embodiment can stably fix the dielectric protective film FC4 having the protective member space 40 between itself and the high pressure side dielectric film 2.

[0328] Furthermore, the multiple gas outlets 70 in the second mode of the active gas generation device of embodiment 5 having the electrode unit 831 shown in Figures 49 to 51 have the same features as the electrode unit 55 of embodiment 2. That is, the multiple gas outlets 70 are provided in such a manner that they approach each other downward so that the multiple partially activated gases collide in a collision region 80, and the collision region 80 is present within the downward tapered region 41t (see Figures 36 and 37) or above the downward tapered region 41t.

[0329] As a result, the second aspect of the active gas generation apparatus of embodiment 5 can supply uniform active gas G2 to the downstream processing space, similar to the electrode unit 55 of embodiment 2 and the electrode unit 811 which is the second aspect of embodiment 3.

[0330] In the fifth embodiment, electrode unit 831 is shown as an example of a practical structure for realizing electrode unit 830, but electrode unit 830 may be realized by other structures.

[0331] <Sixth embodiment> 52 is an explanatory diagram showing a schematic diagram of a basic aspect of an electrode unit 84 used in the active gas generator of embodiment 6. The active gas generator of embodiment 6 has an electrode unit 84 that activates a raw material gas G1 supplied to a discharge space 4 to generate an active gas G2.

[0332] As shown in the same figure, the electrode unit 84 comprises a high-voltage side electrode component E10 which is a first electrode component, and a ground side electrode component E22 which is a second electrode component provided below the high-voltage side electrode component E10.

[0333] The high-voltage side electrode component E10 which is the first electrode component includes a dielectric film F2 which is a first electrode dielectric film, and a high-voltage electrode F5 which is a first electrode conductive film provided on the upper surface of the dielectric film F2.

[0334] The ground side electrode configuration portion E22 which is the second electrode configuration portion includes a dielectric film F3 which is a dielectric film for the second electrode, and a ground electrode F6 which is a conductive film for the second electrode provided on the lower surface of the dielectric film F3.

[0335] The electrode unit 84 of the sixth embodiment is characterized by a structure in which a dielectric protective film FC5, which is a dielectric protective member, is provided above the dielectric film F3, which is a dielectric film for the second electrode, via a minute gap, that is, a protective member space 40. That is, the ground side electrode configuration portion E22 in the electrode unit 84 of the sixth embodiment is configured to include the dielectric film F3, the ground electrode F6, and the dielectric protective film FC5.

[0336] A dielectric space 18 is provided between the dielectric film F2 and the dielectric film F3 via the protective member space 40 and the dielectric protective film FC5. Specifically, the space where the dielectric film F2 and the dielectric protective film FC5 face each other forms the dielectric space 18. Within this dielectric space 18, a discharge space 4 is formed, which includes a main discharge space that is a region where the high voltage electrode F5 and the ground electrode F6 overlap in a plan view.

[0337] Thus, in the electrode unit 84 of embodiment 6, of the dielectric film F2 and the dielectric film F3, the dielectric film F3 is the dielectric film to be protected, and a dielectric protective film FC5 is provided on the dielectric space 18 side of the dielectric film F3 which is the dielectric film to be protected.

[0338] The constituent material of the dielectric protective film FC5, like the dielectric protective films FC2 to FC4, has protective properties of blocking irradiation of the dielectric film F3, which is the dielectric film to be protected, with ions generated by the dielectric barrier discharge when a dielectric barrier discharge occurs in the discharge space 4, and not chemically reacting with the ions.

[0339] The electrode unit 84 further includes an AC power supply 15 that applies an AC voltage as an applied voltage between the high-voltage electrode F5 of the high-voltage side electrode configuration part E10 and the ground electrode F6 of the ground side electrode configuration part E22. Specifically, an AC voltage is applied to the high-voltage electrode F5, and the ground electrode F6 is set to the ground potential, which is the reference potential.

[0340] In the electrode unit 84 which is the basic aspect of the sixth embodiment, a dielectric barrier discharge is generated in the discharge space 4 when a voltage is applied from the AC power supply 15 .

[0341] In the electrode unit 84 of the basic embodiment shown in Fig. 52, there are no particular limitations on the manner in which the raw material gas G1 is supplied to the discharge space 4 and the manner in which the active gas G2 is ejected. For example, in Fig. 52, the raw material gas G1 may be supplied from the left side in the figure, and the active gas G2 may be ejected from the right side in the figure.

[0342] In the active gas generator of the sixth embodiment having the electrode unit 84, the dielectric protective film FC5, which is a dielectric protective member having the above-mentioned protective characteristics, is present between the dielectric space 18 including the discharge space 4 and the dielectric film F3, which is the dielectric film to be protected. This makes it possible to suppress the dielectric film reaction phenomenon in which the dielectric film F3 reacts with ions when a dielectric barrier discharge occurs in the discharge space 4.

[0343] As a result, the active gas generating apparatus according to the basic aspect of the sixth embodiment can generate a high-purity active gas G2 by reliably preventing the intrusion of elements of the dielectric film F3 and the like into the discharge space 4 due to the dielectric film reaction phenomenon.

[0344] In addition, the electrode unit 84 does not require any change to the constituent materials of the dielectric films F2 and F3, and can be constructed simply by adding the dielectric protective film FC5, so the manufacturing process for the electrode unit 84 does not become complicated.

[0345] In the basic aspect of the active gas generation apparatus of embodiment 6, the dielectric protective film FC5, which is a dielectric protective member, has a protective member space 40 between it and the dielectric film F3, which is the dielectric film to be protected, so that the dielectric protective film FC5 and the dielectric film F3 do not need to be in close contact with each other, thereby simplifying the apparatus configuration.

[0346] Furthermore, by setting the gap length Δ40 of the protective member space 40 to a length that is sufficiently shorter than the gap length Δ4 of the discharge space 4, it is possible to relatively easily set the applied voltage from the AC power source 15, the discharge space 4, and the protective member space 40 so as to satisfy the above-mentioned discharge generation requirements.

[0347] As a result, the active gas generation device of the sixth embodiment can generate the active gas G2 with high precision without generating any space other than the discharge space 4 where a discharge phenomenon occurs between the dielectric film F2 and the dielectric film F3.

[0348] The ground side electrode component E22 of the electrode unit 84 includes a dielectric protective film FC5. The active gas generator of the fifth embodiment having this electrode unit 84 generates a dielectric barrier discharge in the discharge space 4 by applying a voltage between the dielectric films F2 and F3, without generating a dielectric barrier discharge in the protective member space 40 formed between the dielectric protective film FC5 serving as the dielectric protective member and the dielectric film F3.

[0349] As a result, the active gas generation device of the sixth embodiment can activate the raw material gas G1 supplied to the discharge space 4 to generate the active gas G2.

[0350] The dielectric protection member corresponding to the dielectric protection film FC5 can exhibit the above-mentioned effects if it is provided on the dielectric space 18 side of the dielectric film to be protected, which is at least one of the dielectric films F2 and F3.

[0351] Therefore, the electrode unit 84 may be expanded to further provide a dielectric protective film FC4 on the lower surface side of the dielectric film F2 via the protective member space 40. Similarly, the electrode unit 83 of the fifth embodiment may be expanded to further provide a dielectric protective film FC5 on the upper surface side of the dielectric film F3 via the protective member space 40.

[0352] In this case, two protective member spaces 40 are formed, one on the lower surface side of the dielectric film F2 and the other on the upper surface side of the dielectric film F3. The gap length Δ40 of each of the two protective member spaces 40 is set to be sufficiently shorter than the gap length Δ4 of the discharge space 4 so as to satisfy the above-mentioned discharge generation requirements.

[0353] <Embodiment 7> (Basic form) 53 is an explanatory diagram showing a schematic diagram of a basic aspect of an electrode unit 91 used in the active gas generator of embodiment 7. The active gas generator of embodiment 7 has an electrode unit 91 that activates a raw material gas G1 supplied to a discharge space 4 to generate an active gas G2.

[0354] As shown in the same figure, the electrode unit 91 comprises a high-voltage side electrode component E13 which is a first electrode component, and a ground side electrode component E20 which is a second electrode component provided below the high-voltage side electrode component E13.

[0355] The high-voltage side electrode component E13 which is the first electrode component includes a dielectric film F2 which is a first electrode dielectric film, and a high-voltage electrode F5 which is a first electrode conductive film provided on the upper surface of the dielectric film F2.

[0356] The ground side electrode configuration portion E20 which is the second electrode configuration portion includes a dielectric film F3 which is a dielectric film for the second electrode, and a ground electrode F6 which is a conductive film for the second electrode provided on the lower surface of the dielectric film F3.

[0357] The high-voltage side electrode constituent part E13 in the electrode unit 91 of the seventh embodiment is characterized by further comprising a conductor film F7 which is an electrode reinforcing conductive film, and a dielectric protective film FC2 which is a dielectric protective member. The thickness of the dielectric protective film FC2 is set to 1 mm or less.

[0358] The conductive film F7, which is an electrode reinforcing conductive film, is provided in close contact with the lower surface of the dielectric film F2, which is the first electrode dielectric film. The conductive film F7 may be, for example, a thin metal film, and the thickness of the conductive film F7 is set to, for example, 500 nm or less.

[0359] The dielectric protective film FC2, which is a dielectric protective member, covers the entire conductive film F7 and is provided on the lower surface of the high-voltage electrode F5. Therefore, the high-voltage side electrode component E13 has a conductive film-embedded laminated structure, which is a laminated structure in which the dielectric film F2, the conductive film F7, and the dielectric protective film FC2 are laminated in this order. In the conductive film-embedded laminated structure, there are no gaps between the dielectric film F2 and the conductive film F7, between the conductive film F7 and the dielectric protective film FC2, and between the dielectric film F2 and the dielectric protective film FC2. The conductive film F7 in the conductive film-embedded laminated structure is set to an electrically floating state.

[0360] Thus, the high voltage side electrode component E13 in the electrode unit 91 of the seventh embodiment is configured to include the dielectric film F2, the high voltage electrode F5, the conductor film F7 and the dielectric protective film FC2.

[0361] A dielectric space 18 is formed between the dielectric film F2 and the dielectric film F3 via the conductive film F7 and the dielectric protective film FC2. Specifically, the space where the dielectric protective film FC2 and the dielectric film F3 face each other becomes the dielectric space 18.

[0362] Thus, in the electrode unit 91 of embodiment 7, of the dielectric film F2 and the dielectric film F3, the dielectric film F2 is the dielectric film to be protected, and a dielectric protective film FC2 is provided on the dielectric space 18 side of the dielectric film F2, which is the dielectric film to be protected.

[0363] Hereinafter, structures similar to those of the electrode unit 81 of the third embodiment shown in FIG. 42 will be denoted by the same reference numerals and explanations thereof will be omitted as appropriate, and the following description will focus on the characteristic features of the electrode unit 91.

[0364] The dielectric protective film FC2, which is a dielectric protective member, covers the entire conductive film F7, which is an electrode reinforcing conductive film, and is provided on the lower surface of the dielectric film F2, which is a dielectric film for the first electrode. As described above, the high-voltage side electrode component E13 has a conductive film-embedded laminated structure that is a laminated structure including the dielectric film F2, the conductive film F7, and the dielectric protective film FC. In the conductive film-embedded laminated structure, there is no gap between the dielectric film F2, the conductive film F7, and the dielectric protective film FC.

[0365] The space where the dielectric protective film FC2 and the dielectric film F3 face each other becomes the dielectric space 18, and in the seventh embodiment, the dielectric film to be protected is the dielectric film F2.

[0366] The conductive film F7 has a planar shape that is wider than the high-voltage electrode F5 in plan view and narrower than the dielectric film F2 and the dielectric protection film FC2 in plan view. The ground electrode F6 includes the conductive film F7 in plan view.

[0367] A relatively large discharge space 4e is formed by including an extended main discharge space, which is a region where the conductive film F7 and the ground electrode F6 overlap in a plan view, within the dielectric space 18. That is, the main discharge space in the electrode unit 91 of the seventh embodiment is extended to an extended main discharge space by the conductive film F7. Here, the extended main discharge space is a region where the conductive film F7 and the ground electrode F6 overlap in a plan view within the dielectric space 18.

[0368] The electrode unit 91 further includes an AC power supply 15 that applies an AC voltage as an applied voltage between the high-voltage electrode F5 of the high-voltage side electrode configuration part E13 and the ground electrode F6 of the ground side electrode configuration part E20. Specifically, an AC voltage is applied to the high-voltage electrode F5, and the ground electrode F6 is set to the ground potential which is the reference potential.

[0369] In the electrode unit 91 which is the basic aspect of the seventh embodiment, a dielectric barrier discharge is generated in the discharge space 4 when a voltage is applied from the AC power supply 15 .

[0370] In the electrode unit 91 of the basic embodiment shown in Fig. 53, the supply form of the raw material gas G1 to the discharge space 4 and the ejection form of the active gas G2 are not particularly limited. For example, in Fig. 53, the raw material gas G1 may be supplied from the left side in the figure, and the active gas G2 may be ejected from the right side in the figure.

[0371] The active gas generation apparatus of the seventh embodiment having the electrode unit 91 as the basic aspect exerts the same effects as the active gas generation apparatus of the third embodiment having the electrode unit 81, and further exerts the unique effects described below.

[0372] Fig. 54 to Fig. 56 are explanatory diagrams showing the effect of the active gas generation device of embodiment 7. Fig. 54 is an explanatory diagram showing discharge space 4 of electrode unit 81 which is the basic mode of embodiment 3, Fig. 55 is an explanatory diagram showing discharge space 4e of electrode unit 91 which is the basic mode of embodiment 7, and Fig. 56 is an explanatory diagram showing discharge space 4e of electrode unit 81X which is an extension of electrode unit 81.

[0373] The formation area of ​​the high-voltage electrode F5 is set to be the same between the electrode unit 81 and the electrode unit 91. In addition, the formation area of ​​the conductive film F7 and the formation area of ​​the extended high-voltage electrode F5e are set to be the same between the electrode unit 91 and the electrode unit 81X.

[0374] 56 includes an extended high-voltage electrode F5e, a dielectric film F2, and a dielectric protective film FC2. In each of the electrode unit 81, the electrode unit 91, and the electrode unit 81X, the ground electrode F6 includes a high-voltage electrode F5, a conductor film F7, and an extended high-voltage electrode F5e in plan view.

[0375] The discharge space 4e in the electrode unit 91 shown in FIG. 55 includes an extended main discharge space which is a region in the dielectric space 18 where the conductive film F7 and the ground electrode F6 overlap in plan view.

[0376] In the active gas generator according to the seventh embodiment, a conductive film F7 is interposed between a dielectric protective film FC2, which is a dielectric protective member, and a dielectric film F2, which is a dielectric film for a first electrode. The conductive film F7 has a shape characteristic that it is wider than the high voltage electrode F5 in plan view.

[0377] For example, when the planar shapes of the high-voltage electrode F5 and the conductive film F7 are both circular, and the diameter of the high-voltage electrode F5 is dA (mm), the diameter of the conductive film F7 is set to (dA+20 mm). Thus, the high-voltage electrode F5 has a shape characteristic that occupies a smaller formation area than the conductive film F7.

[0378] Therefore, in the basic aspect of the active gas generation device of the seventh embodiment, the formation area of ​​the conductive film F7 is enlarged compared to the high voltage electrode F5, and accordingly, a discharge space 4e including an extended main discharge space having a relatively large volume can be obtained.

[0379] This point will be described in detail below. As shown in Fig. 54, in the electrode unit 81, the discharge space 4 is formed including a main discharge space which is a region where the high-voltage electrode F5 and the ground electrode F6 overlap in a plan view within the dielectric space 18.

[0380] On the other hand, as shown in FIG. 55, in the electrode unit 91 of the seventh embodiment, the formation area of ​​the conductive film F7 is made larger than that of the high-voltage electrode F5.

[0381] The conductive film F7, which is an electrode-reinforcing conductive film having electrical conductivity, has a sufficiently small internal resistance and has the property of making the internal potential uniform, so that an electric field that generates a discharge can be generated from the conductive film F7. Therefore, the electrode unit 91 can form a relatively wide discharge space 4e including an extended main discharge space that is a region where the conductive film F7 and the ground electrode F6 overlap in a plan view in the dielectric space 18.

[0382] The thickness of the conductor film F7 is set to, for example, 50 nm. It is preferable to set the thickness of the conductor film F7 so as not to hinder the reduction in resistance and to prevent gaps from occurring between the dielectric film F2, the conductor film F7, and the dielectric protective film FC2 in the conductor film-embedded laminated structure.

[0383] On the other hand, an electrode unit 81X shown in FIG. 56 forms a discharge space 4e equivalent to that of the electrode unit 91 by expanding the formation area of ​​an extended high voltage electrode F5e, without providing a conductive film F7.

[0384] However, since the extended high-voltage electrode F5e is exposed to the outside, the electrode clearance distance ΔF5 between the extended high-voltage electrode F5e and the dielectric film support member M10 is shortened by the amount of the area of ​​the extended high-voltage electrode F5e being larger than that of the high-voltage electrode F5. Therefore, in the electrode unit 81X, the possibility of malfunction occurring between the extended high-voltage electrode F5e and the dielectric film support member M10 increases.

[0385] For example, if the dielectric film support member M10 is a conductor and set to ground level, if the electrode clearance distance ΔF5 between the extended high-voltage electrode F5e and the dielectric film support member M10 is short, there is a risk that the dielectric film support member M10 and the extended high-voltage electrode F5e will be short-circuited via surface discharge.

[0386] On the other hand, in the active gas generating device which is the basic aspect of the seventh embodiment, the conductive film F7 is provided within a conductive film-embedded laminated structure, so that the possibility that the conductive film F7 is electrically connected to external components such as the dielectric film support member M10 is "zero."

[0387] Therefore, the active gas generating apparatus according to the basic aspect of the seventh embodiment can sufficiently suppress the possibility of the occurrence of defects such as the above-mentioned short circuit by minimizing the formation area of ​​the high-voltage electrode F5 and setting the electrode margin distance ΔF5 between the high-voltage electrode F5 and the dielectric film support member M10 to a sufficiently long distance.

[0388] In this way, the active gas generation device which is the basic aspect of the seventh embodiment can minimize the formation area of ​​the high-voltage electrode F5 and generate a dielectric barrier discharge in the discharge space 4e which includes a relatively large (extended) main discharge space.

[0389] In the active gas generating device of the basic aspect of embodiment 7, no gaps are created between the dielectric film F2, the conductive film F7, and the dielectric protective film FC2 inside the conductive film-embedded laminated structure, so that active gas G2 can be obtained with high accuracy without creating any space other than the discharge space 4e where a discharge phenomenon occurs between the dielectric film F2 and the dielectric film F3.

[0390] The high-voltage side electrode component E13 of the electrode unit 91 includes a conductive film F7 and a dielectric protective film FC2. The active gas generator of the basic mode of the seventh embodiment having this electrode unit 91 can activate the source gas G1 supplied to the discharge space 4e in the dielectric space 18 and generate the active gas G2 by applying an AC voltage as an applied voltage from the AC power source 15 between the high-voltage electrode F5 and the ground electrode F6.

[0391] (Second aspect) Fig. 57 is an explanatory diagram showing a cross-sectional structure of an electrode unit 911 used in an active gas generator according to a second aspect of embodiment 7. Fig. 58 is an explanatory diagram showing details of a region of interest R4 in Fig. 57. Each of Fig. 57 and Fig. 58 shows an XYZ orthogonal coordinate system.

[0392] An electrode unit 911 shown in Fig. 57 is a practical structure in which the electrode unit 91 of the basic form shown in Fig. 53 is applied to the electrode unit 55 of embodiment 2. In the electrode unit 911, the high-voltage side dielectric film 2 is used as the dielectric film F2, the ground side dielectric film 3 is used as the dielectric film F3, the power feeder 5 is used as the high-voltage electrode F5, and the conductor film F71 is used as the conductor film F7. Note that the conductor film 7 (Figs. 20 and 21), not shown, is used as the ground electrode F6.

[0393] In this manner, the active gas generator having a practical structure in the second aspect of the seventh embodiment is an active gas generator having the electrode unit 911.

[0394] The overall configuration of the second aspect of the active gas generation apparatus of the seventh embodiment is similar to that of the active gas generation apparatus 71 shown in Fig. 1. Therefore, the electrode unit 911 shown in Fig. 57 corresponds to any one of the electrode units 51 to 53 in the active gas generation apparatus 75 having the overall configuration shown in Fig. 1.

[0395] That is, the second aspect of the active gas generation apparatus of embodiment 7, like the active gas generation apparatus 71 of embodiment 1, comprises electrode units 51-53 as multiple electrode units, and a conductive housing 1 that houses the electrode units 51-53 in an internal space S1 of the housing (see Figure 8).

[0396] In the following, structures similar to electrode unit 50 (51-53) of embodiment 1, structures similar to electrode unit 55 of embodiment 2, and structures similar to electrode unit 831 of embodiment 5 will be given the same symbols and descriptions will be omitted as appropriate, and the description will focus on the characteristic parts of electrode unit 911.

[0397] 57, electrode unit 911, like electrode unit 50 (51-53) of embodiment 1, has a lower surface of high-voltage-side dielectric film 2 which has a recess bottom surface 26 and a convex bottom surface 23 provided around the recess bottom surface. Convex bottom surface 23 is set to be formed at a higher position in the height direction along the +Z direction than recess bottom surface 26. A conductor film F7 and a dielectric protective film FC2 are provided on recess bottom surface 26, and neither conductor film F7 nor dielectric protective film FC2 are provided on convex bottom surface 23.

[0398] The electrode unit 911 includes a dielectric film supporting member 10B having a supporting surface 10F serving as a dielectric supporting surface that supports the convex bottom surface 23 of the high voltage side dielectric film 2 from below.

[0399] As shown in Figure 57, the dielectric film support member 10B further has a fixing auxiliary surface 10XF which serves as a protective member fixing auxiliary surface located below the peripheral area of ​​the dielectric protective film FC2 provided on the bottom surface 26 of the recess of the high-voltage side dielectric film 2.

[0400] Like the electrode units 50 and 55, the electrode unit 911 is provided with a dielectric film suppression member 11 that suppresses the high-voltage side dielectric film 2, which is the dielectric film for the first electrode, from above, and the dielectric film suppression member 11 does not overlap with the power supply 5 in a planar view.

[0401] In the dielectric film support member 10B, an O-ring 17 that functions as an elastic member is inserted between the fixing auxiliary surface 10XF, which is the protective member fixing auxiliary surface, and the lower surface of the dielectric protective film FC2. Note that the conductive film F71 is not formed in the area that overlaps with the fixing auxiliary surface 10XF in a plan view. Therefore, the elastic force of the O-ring 17 brings the recess bottom surface 26 of the high-voltage side dielectric film 2 into close contact with the upper surface of the dielectric protective film FC2. This point will be described in detail below.

[0402] 57, the O-ring 17 is deformed by being sandwiched between the dielectric film support member 10B and the high-voltage side dielectric film 2 via the dielectric protective film FC2. Due to the elastic force of the O-ring 17 functioning as an elastic member, the upper surface of the dielectric protective film FC2 is brought into close contact with the lower surface of the high-voltage side dielectric film 2 on which the conductor film F71 is not formed.

[0403] The electrode unit 911 used in the second aspect of the seventh embodiment provides the same effects as those of the second aspect of the third embodiment and the basic aspect of the seventh embodiment, and further provides the following unique effects.

[0404] The conductor film-embedded laminated structure consisting of the high-voltage side dielectric film 2 (dielectric film F2), the conductor film F71 (conductor film F7) and the dielectric protective film FC2 can be obtained by, for example, the following first and second manufacturing methods.

[0405] The first manufacturing method includes steps S11 to S14, and steps S11 to S14 are described below.

[0406] S11: A conductor film F71 is formed on the top surface of the dielectric protective film FC2 to obtain a conductor-film-attached dielectric protective film FCE (a combination structure of the dielectric protective film FC2 and the conductor film F71) shown in Fig. 58. The conductor film F7 is formed on the dielectric protective film FC2 by sputtering or ion plating.

[0407] S12... The conductor film-attached dielectric protective film FCE is placed on the fixing auxiliary surface 10XF of the dielectric film support member 10B via the O-ring 17. In the conductor film-attached dielectric protective film FCE, the conductor film F7 is not formed above the fixing auxiliary surface 10XF.

[0408] S13: The high voltage side dielectric film 2 is placed on the supporting surface 10F of the dielectric film supporting member 10B.

[0409] S14: A dielectric film suppressing member 11 for suppressing the high voltage side dielectric film 2 from above is provided.

[0410] After step S14 is performed, the upper surface of the conductive film F71 and the upper surface of the dielectric protective film FC2 (on which the conductive film F71 is not provided) are brought into close contact with the lower surface of the high voltage side dielectric film 2 due to the elastic force of the O-ring 17 functioning as an elastic member.

[0411] In this way, the first manufacturing method including steps S11 to S14 can obtain a conductor film-embedded laminated structure without generating gaps inside. In order to perform the deposition of the conductor film F71 in step S11 with high accuracy, it is desirable to increase the flatness of the top surface of the dielectric protective film FC2 by polishing or the like. For example, when the thickness of the conductor film F71 is set to 20 nm, it is desirable to set the surface roughness of the top surface of the dielectric protective film FC2 to 20 nm or less.

[0412] The second manufacturing method includes steps S21 to S24, and steps S21 to S24 are shown below.

[0413] S21: A conductor film F7 is formed on the lower surface of the high-voltage side dielectric film 2 to obtain a conductor-film-attached dielectric film F2E (a combination structure of the dielectric film F2 and the conductor film F7) shown in Fig. 58. The conductor film F7 is formed on the high-voltage side dielectric film 2 by sputtering or ion plating.

[0414] S22...The dielectric protective film FC2 is placed on the auxiliary fixing surface 10XF of the dielectric film support member 10B via the O-ring 17. In the conductive film-attached dielectric film F2E, the conductive film F7 is not formed above the auxiliary fixing surface 10XF.

[0415] S23: The conductor film-attached dielectric film F2E is disposed on the supporting surface 10F of the dielectric film supporting member 10B. No conductor film F7 is formed on the lower surface of the conductor film-attached dielectric film F2E disposed on the supporting surface 10F.

[0416] S24: A dielectric film suppressing member 11 is provided for suppressing the conductor film-attached dielectric film F2E from above.

[0417] After step S24 is performed, the elastic force of the O-ring 17 functioning as an elastic member causes the upper surface of the dielectric protective film FC2 to adhere closely to the lower surface of the conductive film F7 and the lower surface of the high voltage side dielectric film 2 (where the conductive film F7 is not provided).

[0418] In this way, the second manufacturing method including steps S21 to S24 can obtain a conductor film built-in laminated structure without generating gaps inside. Note that, in order to perform the deposition of the conductor film F7 in step S21 with high accuracy, it is desirable to increase the flatness of the lower surface of the high-voltage side dielectric film 2 by polishing or the like. For example, when the thickness of the conductor film F71 is set to 20 nm, it is desirable to set the surface roughness of the lower surface of the high-voltage side dielectric film 2 to 20 nm or less.

[0419] The electrode unit 911 does not require any change to the materials constituting the high voltage side dielectric film 2 and the ground side dielectric film 3, and the main changes from the electrode unit 55 are the improvement from the dielectric film support member 10 to a dielectric film support member 10B, and the addition of a conductor film F7 and a dielectric protective film FC2. Therefore, the manufacturing process of the electrode unit 911, including the above-mentioned first manufacturing method or second manufacturing method, does not become complicated.

[0420] In a second mode of the active gas generator of the seventh embodiment, the dielectric film support member 10B of the electrode unit 911 supports the convex bottom surface 23 of the ground side dielectric film 3 from below with a support surface 10F serving as a dielectric support surface. Furthermore, the elastic force of the O-ring 17 functioning as an elastic member brings the concave bottom surface 26 of the high voltage side dielectric film 2 and the upper surface of the dielectric protective film FC2 into close contact with each other.

[0421] Therefore, the second aspect of the active gas generation device of the seventh embodiment has a relatively simple structure in which the dielectric film support member 10B and the O-ring 17 are provided, and the conductive film-embedded laminated structure can be fixed with good stability.

[0422] In addition, by minimizing the area of ​​the power feeder 5 that serves as the conductive film for the first electrode, a sufficient insulation distance can be ensured between the power feeder 5 and the dielectric film suppressing member 11.

[0423] Therefore, the second aspect of the active gas generation device of the seventh embodiment can obtain a structure that reliably avoids problems that may occur between the power supply 5 and the dielectric film suppressing member 11.

[0424] In addition, the second aspect of the active gas generation apparatus of embodiment 7 utilizes the elastic force of the O-ring 17 to improve the accuracy of adhesion between the bottom surface 26 of the recess in the high-pressure side dielectric film 2 and the upper surface of the dielectric protective film FC2 with a relatively simple structure.

[0425] Furthermore, in the second mode of the active gas generation device of the seventh embodiment having the electrode unit 911 shown in Fig. 57, the multiple gas outlets 70 have the same characteristics as the electrode unit 55 of the second embodiment and the electrode unit 811 which is the second mode of the third embodiment. That is, the multiple gas outlets 70 are provided in such a manner that they approach each other downward so that the multiple partially activated gases collide in the collision region 80, and the collision region 80 is present within the lower tapered region 41t (see Figs. 36 and 37) or above the lower tapered region 41t.

[0426] Therefore, the second aspect of the active gas generation apparatus of embodiment 7 can supply a uniform active gas G2 to the downstream processing space, similar to the active gas generation apparatus of embodiment 2 and the second aspect of embodiment 3.

[0427] <Embodiment 8> Fig. 59 is an explanatory diagram showing the cross-sectional structure of an active gas generation apparatus according to a first and second aspect of embodiment 8. Fig. 60 is an explanatory diagram showing a detailed structure of a focused region R5 in Fig. 59 in the first aspect of embodiment 8. Fig. 61 is an explanatory diagram showing a detailed structure of a focused region R5 in Fig. 59 in the second aspect of embodiment 8. An XYZ orthogonal coordinate system is depicted in each of Figs. 59 to 61.

[0428] An electrode unit 931 shown in FIG. 59 is a practical structure corresponding to the electrode unit 831 of the fifth embodiment shown in FIG.

[0429] The basic aspect of the eighth embodiment corresponding to the first aspect is a structure in which, in the electrode unit 83 shown in FIG. 47, a conductor film F7 is provided on the lower surface of the dielectric film F2, and a protective material space 40 is provided between the lower surface of the conductor film F7 and the upper surface of the dielectric protective film FC4.

[0430] The basic aspect of the eighth embodiment corresponding to the second aspect is a structure in which, in the electrode unit 83 shown in FIG. 47, a conductor film F7 is provided on the upper surface of a dielectric protective film FC4, and a protective material space 40 is provided between the upper surface of the conductor film F7 and the lower surface of the dielectric film F2.

[0431] In the electrode unit 931, the high-voltage side dielectric film 2 is used as the dielectric film F2, the ground side dielectric film 3 is used as the dielectric film F3, the power feeder 5 is used as the high-voltage electrode F5, the conductor film F72 (first embodiment) or the conductor film F73 (second embodiment) is used as the conductor film F7, and the dielectric film support member 10C is used as the dielectric film support member M10 shown in Fig. 48. Note that the conductive film 7 (Figs. 20 and 21) (not shown) is used as the ground electrode F6. Note that the conductor film F72 is shown in Fig. 59.

[0432] In this manner, the active gas generators of the first and second aspects of the eighth embodiment are active gas generators having the electrode unit 931.

[0433] The overall configurations of the first and second aspects of the active gas generation apparatus of embodiment 8 are similar to that of the active gas generation apparatus 71 shown in Fig. 1. Therefore, an electrode unit 931 shown in Fig. 59 corresponds to any one of the electrode units 51 to 53 in the active gas generation apparatus 75 having the overall configuration shown in Fig. 1.

[0434] That is, the first and second aspects of the active gas generation apparatus of embodiment 8, like the active gas generation apparatus 71 of embodiment 1, include electrode units 51-53 as multiple electrode units, and a conductive housing 1 that houses the electrode units 51-53 in an internal space S1 of the housing (see Figure 8).

[0435] In the following, structures similar to electrode unit 50 (51-53) of embodiment 1, electrode unit 55 of embodiment 2, or electrode unit 831 of embodiment 5 will be given the same symbols and descriptions will be omitted as appropriate, and the description will focus on the characteristic parts of electrode unit 931.

[0436] 59, electrode unit 931, like electrode unit 50 (51-53) of embodiment 1, has a recess bottom surface 26 on the lower surface of high-voltage-side dielectric film 2, and a protrusion bottom surface 23 provided around the recess bottom surface. Protrusion bottom surface 23 is set to be formed higher in the height direction along the +Z direction than recess bottom surface 26.

[0437] In the first embodiment shown in Figure 60, a conductive film F72 is provided on the underside of the bottom surface 26 of the recess, and a dielectric protective film FC4 is provided below the conductive film F72 with a protective member space 40 interposed therebetween, and neither the conductive film F72 nor the dielectric protective film FC4 is provided on the bottom surface 23 of the convex portion.

[0438] Thus, in the first embodiment shown in FIG. 60, the dielectric protective film FC4 is arranged on the lower surface side of the high voltage side dielectric film 2 and the conductive film F72 via a protective member space 40 having a minute gap length Δ40.

[0439] Therefore, the high-voltage side electrode component E14 in the first aspect of the electrode unit 931 is arranged in the height direction (+Z direction) in the following order: dielectric protective film FC4, protective member space 40, conductive film F72, high-voltage side dielectric film 2 and power supply body 5.

[0440] On the other hand, in the second embodiment shown in Figure 61, a conductor film-attached dielectric protective film FCE having a combined structure of a conductor film F73 and a dielectric protective film FC4 is provided below the bottom surface 26 of the recess via a protective member space 40, and neither the conductor film F73 nor the dielectric protective film FC4 is provided on the bottom surface 23 of the protrusion.

[0441] Thus, in the second embodiment shown in Figure 61, a conductor film-attached dielectric protective film FCE, which is a combined structure of a conductor film F73 and a dielectric protective film FC4, is arranged on the underside of the high-voltage side dielectric film 2 via a protective member space 40 having a minute gap length Δ40.

[0442] Therefore, the high-voltage side electrode component E15 in the second aspect of the electrode unit 931 is arranged in the height direction (+Z direction) in the following order: dielectric protective film FC4, conductive film F73, protective member space 40, high-voltage side dielectric film 2, and power supply body 5.

[0443] Hereinafter, the first aspect shown in FIG. 60 and the second aspect shown in FIG. 61 may be collectively referred to as the "actual structure of the eighth embodiment" or simply as the "eighth embodiment".

[0444] In the actual structure of the eighth embodiment, a discharge space 4e with a gap length Δ4 is ​​formed between the dielectric protective film FC4 and the ground-side dielectric film 3. A power feeder 5 is provided on the upper surface of the high-voltage-side dielectric film 2, and a ground conductor 60 is provided on the lower surface side of the ground-side dielectric film 3.

[0445] The active gas generation device according to the first aspect of the eighth embodiment shown in Figs. 59 and 60 has the following features.

[0446] The conductive film F72, which is an electrode reinforcing conductive film, is provided in close contact with the lower surface of the high voltage side dielectric film 2, which is the first electrode dielectric film.

[0447] The dielectric protective film FC4, which is a dielectric protective member, is provided below the conductive film F72, and the dielectric protective film FC4 includes the entire conductive film F72 in plan view, and a protective member space 40 is provided between the dielectric protective film FC4 and the conductive film F72. Note that a part of the protective member space 40 where the conductive film F72 is not formed becomes a space between the dielectric protective film FC4 and the high-voltage side dielectric film 2.

[0448] The space where the dielectric protective film FC4 and the ground side dielectric film 3, which is the second electrode dielectric film, face each other becomes the dielectric space 18, and the high voltage side dielectric film 2 is the dielectric film to be protected.

[0449] The high voltage side electrode component E14, which is the first electrode component, is characterized by further including a dielectric protective film FC4 and a conductive film F72.

[0450] The device further includes an AC power supply 15 that applies an applied voltage VP between the power supply 5 of the high-voltage side electrode configuration portion E14 and the ground conductor 6 of the ground side electrode configuration portion E20, and when a voltage is applied from the AC power supply 15, a dielectric barrier discharge is generated in the discharge space 4e.

[0451] The conductive film F72 has a planar shape that is wider than the power feeder 5 in a planar view and narrower than the high voltage side dielectric film 2 in a planar view, and the ground conductor 6 includes the conductive film F72 in a planar view.

[0452] The discharge space 4e includes an extended main discharge space which is a region in the dielectric space 18 where the conductive film F72 and the ground conductor 6 overlap in plan view.

[0453] The applied voltage from the AC power supply 15, the discharge space 4e, and the protective member space 40 are set so as to satisfy the discharge generation requirements that, when a voltage is applied, a dielectric barrier discharge occurs in the discharge space 4e, but a dielectric barrier discharge does not occur in the protective member space 40.

[0454] On the other hand, the active gas generation device according to the second aspect of the eighth embodiment shown in Figs. 59 and 61 has the following features.

[0455] The conductor film F73, which is an electrode reinforcing conductive film, is provided on the upper surface of the dielectric protective film FC4 in close contact therewith, and the dielectric protective film FC4 includes the entire conductor film F73 in plan view.

[0456] A protective member space 40 is provided between the conductive film F73 and the high voltage side dielectric film 2. Note that a part of the protective member space 40 where the conductive film F73 is not formed becomes a space between the dielectric protective film FC4 and the high voltage side dielectric film 2.

[0457] Moreover, the space where the dielectric protective film FC4 and the ground side dielectric film 3 face each other becomes a dielectric space 18, and the dielectric film to be protected is the high voltage side dielectric film 2.

[0458] The high voltage side electrode component E15 is characterized by further including a dielectric protective film FC4 and a conductive film F73.

[0459] The device further includes an AC power supply 15 that applies a voltage between the power supply 5 of the high-voltage side electrode configuration portion E15 and the ground conductor 6 of the ground side electrode configuration portion E20, and when the AC power supply 15 applies a voltage, a dielectric barrier discharge is generated in the discharge space 4e.

[0460] The conductive film F73 has a planar shape that is wider than the power feeder 5 and narrower than the high voltage side dielectric film 2 and the dielectric protective film FC4 in plan view, and the ground conductor 6 includes the conductive film F73 in plan view.

[0461] The discharge space 4e is formed including an extended main discharge space, which is a region in the dielectric space 18 where the conductive film F73 and the ground conductor 6 overlap in plan view.

[0462] The applied voltage of the AC power supply 15, the discharge space 4e, and the protective member space 40 are set so as to satisfy the discharge generation requirements that, when a voltage is applied, a dielectric barrier discharge occurs in the discharge space 4e, but a dielectric barrier discharge does not occur in the protective member space 40.

[0463] In the electrode unit 931 of the eighth embodiment, in order to satisfy the above-mentioned discharge generation requirements, the gap length Δ40 which is the discharge distance in the protective member space 40 is set to be sufficiently shorter than the gap length Δ4 which is the discharge distance in the discharge space 4e. This feature is common to the first and second aspects.

[0464] As shown in FIG. 59, the dielectric film support member 10C further has a support surface 10YF serving as a protective member support surface that supports the peripheral region of the dielectric protective film FC4 from below.

[0465] Therefore, by supporting the peripheral region of the dielectric protective film FC4 from below by the supporting surface 10YF, the position of the dielectric protective film FC4 in the height direction along the Z direction can be fixed.

[0466] In the second embodiment shown in FIG. 61, the peripheral area of ​​the conductor-film-attached dielectric protective film FCE, which is a combined structure of the conductor film F73 and the dielectric protective film FC4, is supported from below by the supporting surface 10YF.

[0467] In the dielectric film support member 10C, the support surface 10F, which is the dielectric support surface, is formed at a higher position in the height direction than the support surface 10YF, which is the protective member support surface, and the difference in height Δd between the support surfaces 10F and 10YF is set so that a protective member space 40 of gap length Δ40 is formed between the lower surface of the high-pressure side dielectric film 2 and the upper surface of the dielectric protective film FC4.

[0468] For example, if the dielectric protective film FC4 has a uniform thickness dC4, the conductive films F72 and F73 both have a uniform thickness d7, and the length of the recess bottom surface 26 in the depth direction from the protrusion bottom surface 23 in the -Z direction is the protrusion length t26, the difference value Δd is set to a length that satisfies {Δd=dC4+d7+t26+Δ40}. In this case, it is necessary to set the gap length Δ40 of the protective member space 40 sufficiently shorter than the gap length Δ4 of the discharge space 4 so that the gap length Δ40 of the protective member space 40 satisfies the above-mentioned discharge occurrence requirements. Note that, since the thickness d7 of the conductive films F72 and F73 is sufficiently thin, the gap length between the dielectric protective film FC4 that forms part of the protective member space 40 and the high-voltage side dielectric film 2 is also approximately the same as the gap length Δ40.

[0469] The first aspect of the electrode unit 931 shown in Figures 59 and 60 can be obtained, for example, by the following third manufacturing method. The third manufacturing method is a manufacturing method including the following steps S31 to S34.

[0470] S31... A conductor film F72 is formed on the lower surface of the high voltage side dielectric film 2 to obtain a conductor-coated dielectric film F2E as shown in FIG.

[0471] S32... The dielectric protective film FC2 is disposed on the supporting surface 10YF of the dielectric film supporting member 10C. The conductor film F7 is not formed on the lower surface of the conductor-film-attached dielectric film F2E disposed on the supporting surface 10F.

[0472] S33: The conductor film-attached dielectric film F2E is disposed on the supporting surface 10F of the dielectric film supporting member 10C. No conductor film F72 is formed on the lower surface of the conductor film-attached dielectric film F2E disposed on the supporting surface 10F.

[0473] S34: A dielectric film suppressing member 11 is provided for suppressing the conductor film-attached dielectric film F2E from above.

[0474] After step S34 is performed, a protective member space 40 is formed between the upper surface of the dielectric protective film FC4 and the lower surface of the conductive film F72 and the lower surface of the high voltage side dielectric film 2 (on which the conductive film F72 is not provided).

[0475] In this manner, the first embodiment of the electrode unit 931 having the high voltage side electrode component E14 can be obtained by the third manufacturing method including steps S31 to S34.

[0476] The second aspect of the electrode unit 931 shown in Figures 59 and 61 can be obtained, for example, by the following fourth manufacturing method. The fourth manufacturing method is a manufacturing method including the following steps S41 to S44.

[0477] S41... A conductor film F73 is formed on the upper surface of the dielectric protective film FC2 to obtain a conductor-film-attached dielectric protective film FCE as shown in FIG.

[0478] S42: The conductor film-attached dielectric protective film FCE is disposed on the supporting surface 10YF of the dielectric film supporting member 10C. In the conductor film-attached dielectric protective film FCE, the conductor film F7 is not formed above the supporting surface 10YF.

[0479] S43: The high voltage side dielectric film 2 is placed on the supporting surface 10F of the dielectric film supporting member 10C.

[0480] S44: A dielectric film suppressing member 11 for suppressing the high voltage side dielectric film 2 from above is provided.

[0481] After step S44 is performed, a protective member space 40 is formed between the high-voltage side dielectric film 2 and the upper surface of the conductive film F73 of the conductive film-attached dielectric protective film FCE and the upper surface of the dielectric protective film FC2 (on which the conductive film F73 is not provided).

[0482] The active gas generation apparatus having the electrode unit 931 having the actual structure of the eighth embodiment provides the same effects as the active gas generation apparatus of the fifth embodiment shown in Figs. 47 to 51, and further provides unique effects described below.

[0483] The active gas generator of the eighth embodiment has a conductor film F72 or F73, which is an electrode reinforcing conductive film, provided between a dielectric protective film FC4, which is a dielectric protective member, and a high-voltage side dielectric film 2 (dielectric film F2), which is a first electrode dielectric film. The conductor film F72 or F73 has a shape characteristic that it is wider than the power feeder 5 (high-voltage electrode F5), which is the first electrode conductive film, in a plan view.

[0484] Therefore, in the active gas generating device of the eighth embodiment, the formation area of ​​the conductive film F72 or the conductive film F73 is enlarged from the power feeder 5, and accordingly, a discharge space 4e including an extended main discharge space having a larger volume can be obtained.

[0485] Therefore, in the active gas generation device of the eighth embodiment, the formation area of ​​the power supply body 5 can be kept to a minimum, and a dielectric barrier discharge can be generated in the relatively wide discharge space 4e including the extended main discharge space.

[0486] In the first aspect of the active gas generation apparatus of embodiment 8, the dielectric protective film FC4, which is the dielectric protective member, has a protective member space 40 between it and the conductive film F72, which is the electrode reinforcing conductive film, so that there is no need to adhere the dielectric protective film FC4 to the conductive film F72 or the high-pressure side dielectric film 2, thereby simplifying the apparatus configuration.

[0487] On the other hand, in the second aspect of the active gas generating apparatus of embodiment 8, since there is a protective member space 40 between the conductive film F73 and the high-pressure side dielectric film 2, there is no need to adhere the dielectric protective film FC4 to the high-pressure side dielectric film 2, and therefore the apparatus configuration can be simplified.

[0488] Furthermore, in the active gas generation apparatus of embodiment 8, by setting the gap length Δ40 of the protective member space 40 to a length that is sufficiently shorter than the gap length Δ4 of the discharge space 4e, it is possible to relatively easily set the applied voltage, the discharge space 4, and the protective member space 40 that satisfy the above-mentioned discharge generation requirements.

[0489] As a result, the active gas generating apparatus of embodiment 8 can accurately obtain active gas G2 between the dielectric film 2 (F2) and the dielectric film 3 (F3) without creating any space other than the discharge space 4e where a discharge phenomenon occurs.

[0490] The high voltage side electrode configuration portion E14 in the first aspect of the electrode unit 931 includes a dielectric protective film FC4, and in the electrode unit 931, the voltage applied between the dielectric films F2 and F3 satisfies the above-mentioned discharge generation requirements.

[0491] Therefore, the first aspect of the active gas generating apparatus of embodiment 8 having the electrode unit 931 can generate a dielectric barrier discharge in a relatively large discharge space 4e including an extended main discharge space between the dielectric protective film FC4 and the dielectric film 3 (F3) without generating a dielectric barrier discharge in the protective member space 40 formed between the dielectric protective film FC4 and the conductive film F72.

[0492] On the other hand, the high voltage side electrode configuration portion E15 in the second aspect of the electrode unit 931 includes a dielectric protective film FC4, and in the electrode unit 931, the voltage applied between the dielectric films F2 and F3 satisfies the above-mentioned discharge generation requirements.

[0493] Therefore, the second aspect of the active gas generating apparatus of embodiment 8 can generate a dielectric barrier discharge in a relatively large discharge space 4e including an extended main discharge space between the dielectric protective film FC4 and the dielectric film 3 (F3) without generating a dielectric barrier discharge in the protective member space 40 formed between the high-pressure side dielectric film 2 and the conductor film F73.

[0494] As a result, the active gas generation device of the eighth embodiment can activate the source gas G1 supplied to the relatively wide discharge space 4e to generate the active gas G2.

[0495] Furthermore, in the electrode unit 931 of the active gas generation apparatus of embodiment 8, the dielectric film support member 10C supports the peripheral area of ​​the high-pressure side dielectric film 2 from below with the support surface 10F, which is the dielectric support surface, and also supports the peripheral area of ​​the dielectric protective film FC4 from below with the support surface 10YF, which is the protective member support surface.

[0496] In addition, in the electrode unit 931, the difference value Δd between the support surface 10F and the support surface 10YF is set so that a protective member space 40 of gap length Δ40 is formed in a portion between the lower surface of the high-voltage side dielectric film 2 and the upper surface of the dielectric protective film FC4.

[0497] Therefore, the active gas generating apparatus of embodiment 8 can stably fix the dielectric protective film FC4 or the dielectric protective film with a conductive film FCE (a combined structure of the conductive film F73 and the dielectric protective film FC4) having a protective member space 40 between it and the high-pressure side dielectric film 2.

[0498] Furthermore, the gas outlets 70 in the active gas generation device of the eighth embodiment having the electrode unit 931 shown in Figures 59 to 61 have the same characteristics as the electrode unit 55 of the second embodiment or the electrode unit 831 of the fifth embodiment. That is, the gas outlets 70 are provided in such a manner that they approach each other downward so that the partially activated gases collide with each other in the collision region 80, and the collision region 80 is present within the lower tapered region 41t (see Figures 36 and 37) or above the lower tapered region 41t.

[0499] As a result, the active gas generation device of the eighth embodiment can supply a uniform active gas G2 to the downstream processing space, similarly to the electrode unit 55 of the second embodiment and the electrode unit 831 of the fifth embodiment.

[0500] <Other> Although the present disclosure has been described in detail, the above description is illustrative in all respects and does not limit the present disclosure. It is understood that countless variations not illustrated can be assumed without departing from the scope of the present disclosure.

[0501] For example, in the second embodiment, a plurality of partially activated gases are caused to collide in one collision region 80, but a plurality of partially activated gases may be selectively caused to collide in two or more collision regions.

[0502] In addition, with regard to the third to sixth embodiments, an active gas generation device having the following first and second improved electrode units is conceivable.

[0503] The first improved electrode unit is a combination structure of electrode unit 81 and electrode unit 84, and has the dielectric protective film FC2 of the third embodiment and the dielectric protective film FC5 of the sixth embodiment.

[0504] The second improved electrode unit is a combination structure of electrode unit 82 and electrode unit 83, and has a structure including the dielectric protective film FC3 of the fourth embodiment and the dielectric protective film FC4 of the fifth embodiment.

[0505] In this manner, within the scope of the present disclosure, it is possible to freely combine the various embodiments, and to modify or omit the various embodiments as appropriate. [Explanation of symbols]

[0506] 1 Case 2 High voltage side dielectric film 3 Ground side dielectric film 4,4e discharge space 5 Power feeder 6,60 Ground conductor 7 Conductive Film 8 Cover dielectric film 9 Shielding dielectric film 10, 10B, 10C, M10 Dielectric film support member 11 Dielectric film suppression member 12 Pressing member 13 Buffer conductor 15 AC power supply 21 Gas flow path 22 Cooling path 40 Protective material space 41 Housing opening 41a Upper area 41t Lower taper area 50,51~53,55,81~84,91,810,811,830,831,911,931 Electrode unit 61 Raw material gas buffer space 62 Slit Space 63 Side space 68 Buffer space for active gas 69,70 Gas outlet 71,75 Active gas generator 80 Collision area E1, E10 to E15 High voltage electrode components E2,E20~E22 Ground side electrode component F2, F3 dielectric film F5, F6 high voltage electrodes F7, F71~F73 Conductor film FC2~FC5 Dielectric protection film

Claims

1. An active gas generator having an electrode unit that activates a raw material gas supplied to a discharge space to generate an active gas, The electrode unit comprises: A first electrode configuration; and a second electrode configuration provided below the first electrode configuration, The first electrode configuration portion includes a first electrode dielectric film and a first electrode conductive film provided on an upper surface of the first electrode dielectric film; the second electrode configuration portion includes a second electrode dielectric film and a second electrode conductive film provided on a lower surface of the second electrode dielectric film, a dielectric space is provided between the first electrode dielectric film and the second electrode dielectric film; the discharge space includes a main discharge space which is a region in the dielectric space where the first and second electrode conductive films overlap in a plan view, The electrode unit comprises: a dielectric protection member provided on the dielectric space side of a dielectric film to be protected, the dielectric film being at least one of the first electrode dielectric film and the second electrode dielectric film; At least one of a protective member space and an electrode reinforcing conductive film is provided between the dielectric protective member and the dielectric film to be protected, a constituent material of the dielectric protective member has a protective property of blocking irradiation of the dielectric film to be protected with ions generated by the dielectric barrier discharge when the dielectric barrier discharge occurs in the discharge space, and not chemically reacting with the ions. Activated gas generator.

2. The active gas generating apparatus according to claim 1, The electrode-reinforcing conductive film is provided on a lower surface of the first electrode dielectric film, the dielectric protection member covers the entirety of the electrode reinforcing conductive film and is provided on a lower surface of the first electrode dielectric film, and a laminate structure is provided in which the first electrode dielectric film, the electrode reinforcing conductive film, and the dielectric protection member are laminated in this order with no gaps between them; a space where the dielectric protection member and the second electrode dielectric film face each other serves as the dielectric space, the dielectric film to be protected is the dielectric film for the first electrode, the first electrode configuration further includes the dielectric protection member and the electrode reinforcing conductive film, The active gas generator includes: a power source that applies a voltage between the first electrode conductive film of the first electrode configuration portion and the second electrode conductive film of the second electrode configuration portion; When the voltage is applied, the dielectric barrier discharge is generated in the discharge space, the electrode-reinforcing conductive film has a planar shape that is wider than the first electrode conductive film in a planar view and narrower than the first electrode dielectric film in a planar view, the second electrode conductive film includes the electrode-reinforcing conductive film in a planar view, the discharge space includes an extended main discharge space in which the electrode-reinforcing conductive film and the second electrode-use conductive film overlap each other in a plan view within the dielectric space; Activated gas generator.

3. An active gas generating device having an electrode unit that activates a raw material gas supplied to a discharge space to generate an active gas, The electrode unit comprises: A first electrode configuration; and a second electrode configuration provided below the first electrode configuration, The first electrode configuration portion includes a first electrode dielectric film and a first electrode conductive film provided on an upper surface of the first electrode dielectric film; the second electrode configuration portion includes a second electrode dielectric film and a second electrode conductive film provided on a lower surface of the second electrode dielectric film, a dielectric space is provided between the first electrode dielectric film and the second electrode dielectric film; the discharge space includes a main discharge space which is a region in the dielectric space where the first and second electrode conductive films overlap in a plan view, The electrode unit comprises: a dielectric protection member provided on the dielectric space side of a dielectric film to be protected, the dielectric film being at least one of the first electrode dielectric film and the second electrode dielectric film; a constituent material of the dielectric protective member has a protective property of blocking irradiation of the dielectric film to be protected with ions generated by the dielectric barrier discharge when a dielectric barrier discharge occurs in the discharge space, and not chemically reacting with the ions; the dielectric protection member is provided in close contact with the dielectric film to be protected with no gap; the dielectric protection member is provided on a lower surface of the first electrode dielectric film in close contact with the lower surface of the first electrode dielectric film, and a space where the dielectric protection member and the second electrode dielectric film face each other becomes the dielectric space; the dielectric film to be protected is the dielectric film for the first electrode, the first electrode configuration further includes the dielectric protection member; The active gas generator includes: a power source that applies a voltage between the first electrode conductive film of the first electrode configuration portion and the second electrode conductive film of the second electrode configuration portion; When the voltage is applied, the dielectric barrier discharge is generated in the discharge space, a lower surface of the dielectric film for the first electrode has a bottom surface of a recess and a bottom surface of a protrusion provided around the bottom surface of the recess, the bottom surface of the protrusion is formed at a position higher in a height direction than the bottom surface of the recess, the dielectric protection member is provided on the bottom surface of the recess, and the dielectric protection member is not provided on the bottom surface of the protrusion, The electrode unit comprises: a dielectric film support member having a dielectric support surface that supports the bottom surface of the protruding portion of the first electrode dielectric film from below; a dielectric film suppressing member that suppresses the first electrode dielectric film from above, the dielectric film suppressing member not overlapping the first electrode conductive film in a plan view, the dielectric film support member further has a protective member fixing auxiliary surface disposed below the dielectric protective member provided on the bottom surface of the recess, The electrode unit comprises: a bottom surface of the recess of the first electrode dielectric film and a top surface of the dielectric protection member are brought into close contact with each other by an elastic force of the elastic member. Activated gas generator.

4. The active gas generating apparatus according to claim 2, a lower surface of the first electrode dielectric film has a recessed portion bottom surface and a protruding portion bottom surface provided around the recessed portion bottom surface, the protruding portion bottom surface is formed at a position higher in a height direction than the recessed portion bottom surface, the electrode reinforcing conductive film and the dielectric protection member are provided on the recessed portion bottom surface, and the electrode reinforcing conductive film and the dielectric protection member are not provided on the protruding portion bottom surface, The electrode unit comprises: a dielectric film support member having a dielectric support surface that supports the bottom surface of the protruding portion of the first electrode dielectric film from below; a dielectric film suppressing member that suppresses the first electrode dielectric film from above, the dielectric film suppressing member not overlapping the first electrode conductive film in a plan view, the dielectric film support member further has a protective member fixing auxiliary surface disposed below the dielectric protective member provided on the bottom surface of the recess, The electrode-reinforcing conductive film is not formed in an area overlapping with the protective member fixing auxiliary surface in a plan view, The electrode unit comprises: a bottom surface of the recess of the first electrode dielectric film and a top surface of the dielectric protection member are brought into close contact with each other by an elastic force of the elastic member. Activated gas generator.

5. The active gas generating apparatus according to claim 3 or 4, The bottom surface of the recess is formed in a circular shape in a plan view, the bottom surface of the convex portion is formed in a circular ring shape around the bottom surface of the concave portion in a plan view, the protective member fixing auxiliary surface of the dielectric film support member is formed in a circular ring shape in a plan view, The dielectric film support member is a groove portion provided in a circular shape in a plan view in the protective member fixing auxiliary surface; an O-ring provided in the groove and having a circular shape in a plan view, The elastic member is an O-ring. Activated gas generator.

6. The active gas generating apparatus according to claim 1, a power source that applies a voltage between the first electrode conductive film of the first electrode configuration portion and the second electrode conductive film of the second electrode configuration portion; the dielectric protection member is provided with a protection member space between it and the dielectric film to be protected, the applied voltage, the discharge space, and the protective member space are set so as to satisfy a discharge generation requirement that, when the applied voltage is applied, the dielectric barrier discharge is generated in the discharge space, and the dielectric barrier discharge is not generated in the protective member space. Activated gas generator.

7. The active gas generating apparatus according to claim 6, the dielectric protection member has a protection member space between itself and a lower surface of the first electrode dielectric film, and a space where the dielectric protection member and the second electrode dielectric film face each other becomes the dielectric space; the dielectric film to be protected is the dielectric film for the first electrode, The first electrode configuration further includes the dielectric protection member. Activated gas generator.

8. The active gas generating apparatus according to claim 1, The first electrode dielectric film further includes the electrode-reinforcing conductive film provided on a lower surface of the first electrode dielectric film in close contact therewith, the dielectric protection member is provided below the electrode-reinforcing conductive film, the dielectric protection member includes the entire electrode-reinforcing conductive film in a plan view, and the protection member space is provided between the dielectric protection member and the electrode-reinforcing conductive film, a space where the dielectric protection member and the second electrode dielectric film face each other serves as the dielectric space, the dielectric film to be protected is the dielectric film for the first electrode, the first electrode configuration further includes the dielectric protection member and the electrode reinforcing conductive film, The active gas generator includes: a power source that applies a voltage between the first electrode conductive film of the first electrode configuration portion and the second electrode conductive film of the second electrode configuration portion; When the voltage is applied, the dielectric barrier discharge is generated in the discharge space, the electrode-reinforcing conductive film has a planar shape that is wider than the first electrode conductive film in a planar view and narrower than the first electrode dielectric film in a planar view, the second electrode conductive film includes the electrode-reinforcing conductive film in a planar view, the discharge space includes an extended main discharge space which is a region in the dielectric space where the electrode-reinforcing conductive film and the second electrode-use conductive film overlap in a plan view, the applied voltage, the discharge space, and the protective member space are set so as to satisfy a discharge generation requirement that, when the applied voltage is applied, the dielectric barrier discharge is generated in the discharge space, and the dielectric barrier discharge is not generated in the protective member space. Activated gas generator.

9. The active gas generating apparatus according to claim 1, the dielectric protection member further includes the electrode-reinforcing conductive film provided in close contact with an upper surface of the dielectric protection member, the dielectric protection member including the entire electrode-reinforcing conductive film in a plan view; the protective member space is provided between the electrode reinforcing conductive film and the first electrode dielectric film, a space where the dielectric protection member and the second electrode dielectric film face each other serves as the dielectric space, the dielectric film to be protected is the dielectric film for the first electrode, the first electrode configuration further includes the dielectric protection member and the electrode reinforcing conductive film, The active gas generator includes: a power source that applies a voltage between the first electrode conductive film of the first electrode configuration portion and the second electrode conductive film of the second electrode configuration portion; When the voltage is applied, the dielectric barrier discharge is generated in the discharge space, the electrode-reinforcing conductive film has a planar shape that is wider than the first electrode conductive film in a planar view and narrower than the first electrode dielectric film in a planar view, the second electrode conductive film includes the electrode-reinforcing conductive film in a planar view, the discharge space includes an extended main discharge space which is a region in the dielectric space where the electrode-reinforcing conductive film and the second electrode-use conductive film overlap in a plan view, the applied voltage, the discharge space, and the protective member space are set so as to satisfy a discharge generation requirement that, when the applied voltage is applied, the dielectric barrier discharge is generated in the discharge space, and the dielectric barrier discharge is not generated in the protective member space. Activated gas generator.

10. The active gas generating apparatus according to claim 7, a lower surface of the first electrode dielectric film has a recessed portion bottom surface and a protruding portion bottom surface provided around the recessed portion bottom surface, the protruding portion bottom surface is formed at a position higher in a height direction than the recessed portion bottom surface, the recessed portion bottom surface overlaps with the dielectric protection member in a plan view, and the protruding portion bottom surface does not overlap with the dielectric protection member in a plan view, The electrode unit comprises: a dielectric film support member having a dielectric support surface that supports the bottom surface of the protruding portion of the first electrode dielectric film from below; a dielectric film suppressing member that suppresses the first electrode dielectric film from above, the dielectric film suppressing member not overlapping the first electrode conductive film in a plan view, the dielectric film support member further has a protection member support surface that supports the dielectric protection member from below, the dielectric support surface is formed at a position higher in a height direction than the protective member support surface, and a difference in height between the dielectric support surface and the protective member support surface is set so that the protective member space is formed between a lower surface of the first electrode dielectric film and an upper surface of the dielectric protective member. Activated gas generator.

11. The active gas generating apparatus according to claim 8 or claim 9, a lower surface of the first electrode dielectric film has a recessed portion bottom surface and a protruding portion bottom surface provided around the recessed portion bottom surface, the protruding portion bottom surface is formed at a position higher in a height direction than the recessed portion bottom surface, the recessed portion bottom surface overlaps with the dielectric protection member and the electrode reinforcing conductive film in a planar view, and the protruding portion bottom surface does not overlap with the dielectric protection member and the electrode reinforcing conductive film in a planar view, The electrode unit comprises: a dielectric film support member having a dielectric support surface that supports the bottom surface of the protruding portion of the first electrode dielectric film from below; a dielectric film suppressing member that suppresses the first electrode dielectric film from above, the dielectric film suppressing member not overlapping the first electrode conductive film in a plan view, the dielectric film support member further has a protection member support surface that supports the dielectric protection member from below, the dielectric support surface is formed at a position higher in a height direction than the protective member support surface, and a difference in height between the dielectric support surface and the protective member support surface is set so that the protective member space is formed in a part between a lower surface of the first electrode dielectric film and an upper surface of the dielectric protective member. Activated gas generator.

12. The active gas generating apparatus according to claim 6, the dielectric protection member has a protection member space between itself and an upper surface of the second electrode dielectric film, and a space where the first electrode dielectric film and the dielectric protection member face each other becomes the dielectric space; the dielectric film to be protected is the second electrode dielectric film, The second electrode configuration further includes the dielectric protection member. Activated gas generator.

13. The active gas generating apparatus according to any one of claims 2 to 4 and claims 7 to 10, The electrode unit is housed in a space within a housing, and the housing further includes a conductive housing. The housing has a housing bottom including a flat surface and a conductor accommodating space recessed in a depth direction from the flat surface, The electrode unit comprises: a reference potential conductor provided below the second electrode configuration portion and accommodated in the conductor accommodating space; the reference potential conductor has an active gas buffer space at an upper portion, and the second electrode component is disposed to close the active gas buffer space; the second electrode dielectric film has a dielectric through hole penetrating the second electrode dielectric film in a region overlapping with the active gas buffer space in a plan view, the second electrode conductive film has a conductive film opening in a region overlapping with the active gas buffer space in a plan view, the conductive film opening overlaps with the dielectric through hole in a plan view, The active gas generator includes: a plurality of gas outlets each extending from a bottom surface of the active gas buffer space through the reference potential conductor, the plurality of gas outlets not overlapping the dielectric through hole in a plan view; the discharge space includes, in addition to the main discharge space, an auxiliary discharge space including the dielectric through hole and a part of the active gas buffer space; The active gas output from the plurality of gas outlets is defined as a plurality of partially active gases, The housing bottom of the housing has a housing opening in a region overlapping with the active gas buffer space in a plan view, and the plurality of partially activated gases are guided downward through the housing opening, the housing opening includes a tapered region having an opening area that becomes wider downward, The plurality of gas outlets are provided in such a manner that they approach each other downwardly so that the plurality of partially activated gases collide with each other in a collision region, and the collision region is located within the tapered region or above the tapered region. Activated gas generator.

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