Multi-micro-led chip package and preparation method therefor

Abstract

The present invention relates to the technical field of semiconductor displays, and relates in particular to a multi-Micro-LED chip package and a preparation method therefor. In the preparation method for the multi-Micro-LED chip package of the present invention, by optimizing the preparation processes of a first zirconium oxide passivation layer, a second zirconium oxide passivation layer, and a third zirconium oxide passivation layer, the surfaces of the zirconium oxide passivation layers are formed as rough structures. Consequently, during subsequent formation of metal layers, the bonding performance between the passivation layers and the metal layers can be effectively improved, thereby effectively preventing delamination of the metal layers. Moreover, by forming a first metal layer, a second metal layer, and a third metal layer, multiple conductive paths are provided between each Micro-LED chip and a second electrode. During subsequent use, even if a certain conductive path is disconnected, normal operation of the Micro-LED chips is not affected.

Description

Multi-Micro-LED chip package and preparation method thereof

[0001] The present application is based on the Chinese patent application No.CN202411339138.4, filed on September 25, 2024, and claims the priority of the Chinese patent application, the whole content of which is incorporated herein by reference. TECHNICAL FIELD

[0002] The present application relates to the technical field of semiconductor light-emitting, in particular to a multi-Micro-LED chip package and a preparation method thereof. BACKGROUND

[0003] The core structure of the Micro-LED chip is a pn junction formed by a p-type semiconductor layer and an n-type semiconductor layer. When a forward voltage is applied to the Micro-LED chip, electrons and holes are injected from the n-type semiconductor layer and the p-type semiconductor layer to the quantum well region through the electrodes, and light is emitted by recombination in the quantum well region. Micro-LED display technology is to miniaturize and matrix the Micro-LED chip, which is directly used as a display pixel point, as a basic unit of imaging, so as to realize image display. The Micro-LED chip package technology is a crucial link in the Micro-LED display technology, which directly affects the performance and reliability of the Micro-LED display screen. How to improve the packaging process of the Micro-LED chip has attracted widespread attention. SUMMARY

[0004] The present application aims to overcome the shortcomings of the prior art, and provides a multi-Micro-LED chip package and a preparation method thereof.

[0005] To achieve the above-mentioned purpose, the present application provides a preparation method of a multi-Micro-LED chip package, which comprises the following steps:

[0006] A light-emitting wafer is provided, which comprises a first semiconductor layer, a light-emitting quantum well layer and a second semiconductor layer.

[0007] The light-emitting wafer is cut to form a plurality of Micro-LED units.

[0008] A carrier substrate is provided, and M Micro-LED units are transferred to the carrier substrate, M≥6.

[0009] Then the carrier substrate is placed in an ALD chamber, and a zirconium source gas, a cleaning gas, an oxygen source gas, and a cleaning gas are sequentially circulated into the ALD chamber, and then a reaction gas composed of a zirconium source gas and an organic blocking agent, a cleaning gas, an oxygen source gas, and a cleaning gas are sequentially circulated into the ALD chamber to form a first zirconium oxide passivation layer with a rough surface, the first zirconium oxide protective layer covering the upper surface and the side surface of each Micro-LED unit.

[0010] Then a first metal layer is formed on the first zirconium oxide protective layer.

[0011] Then the carrier substrate is placed in an ALD chamber again, and a reaction gas composed of a zirconium source gas and an organic blocking agent, a cleaning gas, an oxygen source gas, and a cleaning gas are sequentially circulated into the ALD chamber to form a second zirconium oxide passivation layer with a rough surface, the second zirconium oxide protective layer covering the first metal layer.

[0012] Then a second metal layer is formed on the second zirconium oxide protective layer.

[0013] Then the carrier substrate is placed in an ALD chamber again, and a reaction gas composed of a zirconium source gas and an organic blocking agent, a cleaning gas, an oxygen source gas, and a cleaning gas are sequentially circulated into the ALD chamber to form a third zirconium oxide passivation layer with a rough surface, the third zirconium oxide protective layer covering the second metal layer.

[0014] Then a third metal layer is formed on the third zirconium oxide protective layer.

[0015] Then a first electrode and a second electrode are formed, the first electrode being electrically connected to the first semiconductor layer of the Micro-LED unit, and the second electrode being electrically connected to the first metal layer, the second metal layer, and the third metal layer.

[0016] The carrier substrate is removed, and a conductive layer is formed on the second semiconductor layer, the second semiconductor layer being electrically connected to the first metal layer, the second metal layer, and the third metal layer through the conductive layer.

[0017] As a preferred technical solution, in the process of forming the first zirconium oxide passivation layer, the second zirconium oxide passivation layer, and the third zirconium oxide passivation layer, the zirconium source gas is one of tetrakis tert-butoxyzirconium, zirconium chloride, and zirconium iodide, and the organic blocking agent is one of methoxytrimethylsilane, trimethylchlorosilane, and monochlorosilane.

[0018] Preferably, the cleaning gas is one of nitrogen, argon and helium, and the oxygen source gas is one of water vapor, oxygen, ozone and hydrogen peroxide.

[0019] Preferably, the method for forming the first metal layer, the second metal layer and the third metal layer is one of magnetron sputtering, thermal evaporation and electron beam evaporation, and the material of the first metal layer, the second metal layer and the third metal layer is one or more of copper, aluminum, silver, titanium and palladium.

[0020] Preferably, the surface roughness of the second zirconium oxide passivation layer is greater than that of the first zirconium oxide passivation layer, and the surface roughness of the third zirconium oxide passivation layer is greater than that of the second zirconium oxide passivation layer.

[0021] Preferably, the thickness of the first zirconium oxide passivation layer is greater than that of the second zirconium oxide passivation layer, and the thickness of the first zirconium oxide passivation layer is greater than that of the third zirconium oxide passivation layer.

[0022] Preferably, the thickness of each of the first metal layer, the second metal layer and the third metal layer is less than that of the first zirconium oxide passivation layer, and greater than that of the second zirconium oxide passivation layer and / or that of the third zirconium oxide passivation layer.

[0023] Preferably, a first opening is formed on each of the Micro-LED units to expose the first semiconductor layer, an insulating layer is formed on the sidewall of the first opening, and then the first electrode is formed in the first opening.

[0024] Preferably, a second opening is formed on one of the M Micro-LED units to expose the first zirconium oxide passivation layer, the sidewall of the second opening exposes the first metal layer, the second metal layer and the third metal layer, and the second electrode is formed in the second opening.

[0025] The application further provides a preparation method of a multi-Micro-LED chip package.

[0026] The application has the following advantages:

[0027] In the preparation method of the multi-Micro-LED chip package body, zirconium oxide is used as the passivation layer of the Micro-LED chip. Since the density of zirconium oxide is relatively high, the Micro-LED chip can be more effectively protected. By optimizing the preparation process of the first zirconium oxide passivation layer, the second zirconium oxide passivation layer and the third zirconium oxide passivation layer, the surface of each zirconium oxide passivation layer is rough, which can effectively improve the bonding performance of the metal layer and the zirconium oxide passivation layer, thereby effectively avoiding the peeling of the metal layer. And due to the existence of the rough structure, the interface area between the first metal layer and the first zirconium oxide passivation layer is greatly increased, so that when the Micro-LED chip emits light, the light irradiated to the interface can be reflected multiple times and then emitted from the light-emitting surface of the Micro-LED chip, thereby greatly improving the light-emitting efficiency of the Micro-LED chip. And in this application, due to the existence of the first metal layer, the second metal layer and the third metal layer, multiple conductive paths are provided between each Micro-LED chip and the second electrode. In the subsequent use process, even if one conductive path is open, it does not hinder the normal use of each Micro-LED chip. BRIEF DESCRIPTION OF DRAWINGS

[0028] FIG. 1 shows a structure schematic diagram of a light-emitting wafer in an embodiment of the present application.

[0029] FIG. 2 shows a structure schematic diagram of forming a plurality of Micro-LED units in an embodiment of the present application.

[0030] FIG. 3 shows a structure schematic diagram of transferring M Micro-LED units to a carrier substrate in an embodiment of the present application.

[0031] FIG. 4 shows a structure schematic diagram of forming a first zirconium oxide passivation layer, a first metal layer, a second zirconium oxide passivation layer, a second metal layer, a third zirconium oxide passivation layer and a third metal layer in an embodiment of the present application.

[0032] FIG. 5 shows a structure schematic diagram of forming a first electrode and a second electrode in an embodiment of the present application.

[0033] FIG. 6 shows a structure schematic diagram of forming a conductive layer in an embodiment of the present application. DETAILED DESCRIPTION

[0034] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the related drawings. The preferred embodiments of the present application are shown in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0035] As shown in FIGS. 1-6, the present embodiment provides a preparation method of a multi-Micro-LED chip package, which comprises the following steps:

[0036] As shown in FIG. 1, a light-emitting wafer is provided, which comprises a first semiconductor layer 101, a light-emitting quantum well layer 102, and a second semiconductor layer 103.

[0037] In a specific embodiment, the first semiconductor layer 101, the light-emitting quantum well layer 102, and the second semiconductor layer 103 are formed by a MOCVD process, wherein the first semiconductor layer 101 and the second semiconductor layer 103 are gallium nitride layers with different doping types, specifically, the first semiconductor layer 101 is an n-type gallium nitride layer doped with silicon or a p-type gallium nitride layer doped with magnesium, and correspondingly, the second semiconductor layer 103 is a p-type gallium nitride layer doped with magnesium or an n-type gallium nitride layer doped with silicon; the quantum well layer 102 can be an InGaN quantum well layer and a GaN quantum barrier layer alternately grown.

[0038] As shown in FIG. 2, the light-emitting wafer is then subjected to a cutting process to form a plurality of Micro-LED units 100.

[0039] In a specific embodiment, the plurality of Micro-LED units 100 are formed by laser cutting or mechanical cutting.

[0040] As shown in FIG. 3, a carrier substrate 200 is provided, and M Micro-LED units 100 are transferred to the carrier substrate 200, M≥6, and the first semiconductor 101 of each Micro-LED unit 100 faces the carrier substrate 200.

[0041] In a specific embodiment, the carrier substrate 200 is a rigid substrate.

[0042] As shown in FIG. 4, the carrier substrate 200 is then placed in an ALD chamber, and zirconium source gas, cleaning gas, oxygen source gas, and cleaning gas are sequentially circulated into the ALD chamber, and then reaction gas composed of zirconium source gas and organic blocking agent, cleaning gas, oxygen source gas, and cleaning gas are sequentially circulated into the ALD chamber to form a first zirconium oxide passivation layer 301 with a rough surface, which covers the upper surface and the side surface of each Micro-LED unit 100.

[0043] In a specific embodiment, in the process of forming the first zirconium oxide passivation layer 301, the zirconium source gas is one of tetrakis-tert-butoxyzirconium, zirconium chloride, and zirconium iodide, and the organic blocking agent is one of methoxytrimethylsilane, trimethylchlorosilane, and monochlorosilane.

[0044] In some embodiments, the purge gas is one of nitrogen, argon, and helium, and the oxygen source gas is one of water vapor, oxygen, ozone, and hydrogen peroxide.

[0045] In some embodiments, the roughness of the rough surface of the first zirconium oxide passivation layer 301 is 0.1-0.2 microns.

[0046] In some embodiments, the temperature of the ALD chamber is maintained at 250-400 °C, and the pressure of the ALD chamber is set at 0.5-5 torr. More specifically, the temperature of the ALD chamber can be set at 250 °C, 280 °C, 320 °C, 350 °C, or 400 °C, and the pressure of the ALD chamber can be set at 0.5 torr, 1 torr, 1.5 torr, 2 torr, 2.5 torr, 3 torr, 3.5 torr, 4 torr, 4.5 torr, or 5 torr.

[0047] In some embodiments, the specific process of sequentially circulating the zirconium source gas, the purge gas, the oxygen source gas, and the purge gas into the ALD chamber is as follows: the flow rate of the zirconium source gas is 20-80 sccm, the time for each circulation of the zirconium source gas is 2-6 seconds, and 1-4 seconds is maintained before the circulation of the purge gas and after the circulation of the zirconium source gas is stopped, then the purge gas is circulated, the flow rate of the purge gas is 1000-6000 sccm, the time for the circulation of the purge gas is 10-20 seconds, then the oxygen source gas is circulated, the flow rate of the oxygen source gas is 20-80 sccm, the time for each circulation of the oxygen source gas is 2-6 seconds, and 1-4 seconds is maintained before the circulation of the purge gas and after the circulation of the oxygen source gas is stopped, then the purge gas is circulated, the flow rate of the second purge gas is 1000-6000 sccm, and the time for the circulation of the purge gas is 10-20 seconds.

[0048] In a specific embodiment, the specific process of sequentially circulating the reaction gas composed of the zirconium source gas and the organic blocking agent, the purge gas, the oxygen source gas, and the purge gas into the ALD chamber is as follows: the flow rate of the reaction gas composed of the zirconium source gas and the organic blocking agent is 30-90 sccm, the time for each time of the reaction gas composed of the zirconium source gas and the organic blocking agent is 3-7 seconds, wherein the flow rate of the organic blocking agent accounts for 2-8% of the reaction gas composed of the zirconium source gas and the organic blocking agent, and 1-4 seconds is maintained before the purge gas is introduced and after the reaction gas composed of the zirconium source gas and the organic blocking agent is stopped, then the purge gas is introduced, the flow rate of the third purge gas is 2000-7000 sccm, the time for the purge gas is introduced is 10-20 seconds, then the oxygen source gas is introduced, the flow rate of the oxygen source gas is 30-90 sccm, the time for each time of the oxygen source gas is introduced is 3-7 seconds, and 1-4 seconds is maintained before the purge gas is introduced and after the oxygen source gas is stopped, then the purge gas is introduced, the flow rate of the purge gas is 2000-7000 sccm, the time for the purge gas is introduced is 10-20 seconds, so as to form the first zirconium oxide passivation layer 301 with a rough surface, the first zirconium oxide passivation layer 301 covers the upper surface and the side surface of each Micro-LED unit 100, and the roughness of the rough surface of the first zirconium oxide passivation layer 301 is 0.1-0.2 microns.

[0049] In a specific embodiment, the temperature of the ALD chamber is maintained at 280°C, and the pressure of the ALD chamber is set at 1.5 torr, and the specific process of sequentially circulating the zirconium source gas, the cleaning gas, the oxygen source gas, and the cleaning gas into the ALD chamber is as follows: the flow rate of the zirconium source gas is 50 sccm, the time for each circulation of the zirconium source gas is 4 seconds, and 3 seconds are maintained before the circulation of the cleaning gas and after the stop of the circulation of the zirconium source gas, then the cleaning gas is circulated, the flow rate of the cleaning gas is 5000 sccm, the time for the circulation of the cleaning gas is 18 seconds, then the oxygen source gas is circulated, the flow rate of the oxygen source gas is 50 sccm, the time for each circulation of the oxygen source gas is 4 seconds, and 3 seconds are maintained before the circulation of the cleaning gas and after the stop of the circulation of the oxygen source gas, then the cleaning gas is circulated, the flow rate of the second cleaning gas is 5000 sccm, the time for the circulation of the cleaning gas is 18 seconds, then the specific process of sequentially circulating the reaction gas composed of the zirconium source gas and the organic blocking agent, the cleaning gas, the oxygen source gas, and the cleaning gas into the ALD chamber is as follows: the flow rate of the reaction gas composed of the zirconium source gas and the organic blocking agent is 60 sccm, the time for each circulation of the reaction gas composed of the zirconium source gas and the organic blocking agent is 6 seconds, wherein the flow rate of the organic blocking agent accounts for 5% of the reaction gas composed of the zirconium source gas and the organic blocking agent, and 3 seconds are maintained before the circulation of the cleaning gas and after the stop of the circulation of the reaction gas composed of the zirconium source gas and the organic blocking agent, then the cleaning gas is circulated, the flow rate of the third cleaning gas is 6000 sccm, the time for the circulation of the cleaning gas is 18 seconds, then the oxygen source gas is circulated, the flow rate of the oxygen source gas is 60 sccm, the time for each circulation of the oxygen source gas is 6 seconds, and 3 seconds are maintained before the circulation of the cleaning gas and after the stop of the circulation of the oxygen source gas, then the cleaning gas is circulated, the flow rate of the cleaning gas is 6000 sccm, the time for the circulation of the cleaning gas is 18 seconds, and the appropriate circulation times are optimized to form the first zirconium oxide protective layer 301 with a suitable thickness.

[0050] As shown in FIG. 4, then the first metal layer 302 is formed on the first zirconium oxide protective layer 301.

[0051] In a specific embodiment, the method for forming the first metal layer 302 is one of magnetron sputtering, thermal evaporation, and electron beam evaporation, and the material of the first metal layer 302 is one or more of copper, aluminum, silver, titanium, and palladium.

[0052] In a specific embodiment, the method for forming the first metal layer 302 is magnetron sputtering, and the material of the first metal layer 302 is copper.

[0053] As shown in FIG. 4, then the carrier substrate 200 is placed again in the ALD chamber, and reaction gases consisting of a zirconium source gas and an organic blocking agent, a cleaning gas, an oxygen source gas, and a cleaning gas are circulated in the ALD chamber in sequence to form a second zirconium oxide passivation layer 303 having a rough surface, which covers the first metal layer 302.

[0054] In specific embodiments, in the process of forming the second zirconium oxide passivation layer, the zirconium source gas is one of tetrakis-tert-butoxyzirconium, zirconium chloride, and zirconium iodide, and the organic blocking agent is one of methoxytrimethylsilane, trimethylchlorosilane, and monochlorosilane.

[0055] In specific embodiments, in the process of forming the second zirconium oxide passivation layer, the cleaning gas is one of nitrogen, argon, and helium, and the oxygen source gas is one of water vapor, oxygen, ozone, and hydrogen peroxide.

[0056] In specific embodiments, the roughness of the rough surface of the second zirconium oxide passivation layer 303 is 0.2-0.3 microns.

[0057] In specific embodiments, the temperature of the ALD chamber is maintained at 250-400°C, and the gas pressure of the ALD chamber is set to 0.5-5 torr. More specifically, the temperature of the ALD chamber can be set to 250°C, 280°C, 320°C, 350°C, or 400°C, and the gas pressure of the ALD chamber can be set to 0.5 torr, 1 torr, 1.5 torr, 2 torr, 2.5 torr, 3 torr, 3.5 torr, 4 torr, 4.5 torr, or 5 torr.

[0058] In a specific embodiment, in the process of forming the second zirconium oxide passivation layer 303 with a rough surface, the specific process of sequentially circulating the reaction gas composed of the zirconium source gas and the organic blocking agent, the cleaning gas, the oxygen source gas, and the cleaning gas into the ALD chamber is as follows: the flow rate of the reaction gas composed of the zirconium source gas and the organic blocking agent is 40-100 sccm, the time for each circulation of the reaction gas composed of the zirconium source gas and the organic blocking agent is 3-7 seconds, wherein the flow rate of the organic blocking agent accounts for 5-10% of the reaction gas composed of the zirconium source gas and the organic blocking agent, and 1-4 seconds is maintained before the cleaning gas is introduced and after the circulation of the reaction gas composed of the zirconium source gas and the organic blocking agent is stopped, then the cleaning gas is introduced, the flow rate of the third cleaning gas is 2000-7000 sccm, the time for introducing the cleaning gas is 10-20 seconds, then the oxygen source gas is introduced, the flow rate of the oxygen source gas is 40-100 sccm, the time for each circulation of the oxygen source gas is 3-7 seconds, and 1-4 seconds is maintained before the cleaning gas is introduced and after the circulation of the oxygen source gas is stopped, then the cleaning gas is introduced, the flow rate of the cleaning gas is 2000-7000 sccm, the time for introducing the cleaning gas is 10-20 seconds, so as to form the second zirconium oxide passivation layer 303 with a rough surface, and the roughness of the rough surface of the second zirconium oxide passivation layer 303 is 0.2-0.3 microns.

[0059] In a more specific embodiment, the specific preparation process of the second zirconium oxide passivation layer 303 is optimized to form the second zirconium oxide passivation layer 303 with a suitable thickness, and the roughness of the rough surface of the second zirconium oxide passivation layer 303 is 0.2-0.3 microns.

[0060] As shown in FIG. 4, then a second metal layer 304 is formed on the second zirconium oxide passivation layer 303.

[0061] In a specific embodiment, the method for forming the second metal layer 304 is one of magnetron sputtering, thermal evaporation, and electron beam evaporation, and the material of the second metal layer 304 is one or more of copper, aluminum, silver, titanium, and palladium.

[0062] In a specific embodiment, the method for forming the second metal layer 304 is magnetron sputtering, and the material of the second metal layer 304 is copper.

[0063] As shown in FIG. 4, then the carrier substrate 200 is placed into the ALD chamber again, and the reaction gas composed of the zirconium source gas and the organic blocking agent, the cleaning gas, the oxygen source gas, and the cleaning gas are sequentially circulated into the ALD chamber to form a third zirconium oxide passivation layer 305 with a rough surface, and the third zirconium oxide passivation layer 305 covers the second metal layer 304.

[0064] In specific embodiments, in forming the third zirconium oxide passivation layer 305, the zirconium source gas is one of tetrakis-tert-butoxyzirconium, zirconium chloride, and zirconium iodide, and the organic blocking agent is one of methoxytrimethylsilane, trimethylchlorosilane, and monochlorosilane.

[0065] In specific embodiments, in forming the third zirconium oxide passivation layer 305, the purge gas is one of nitrogen, argon, and helium, and the oxygen source gas is one of water vapor, oxygen, ozone, and hydrogen peroxide.

[0066] In specific embodiments, the roughness of the rough surface of the third zirconium oxide passivation layer 305 is 0.3-0.4 microns.

[0067] In specific embodiments, the temperature of the ALD chamber is maintained at 250-400 °C, and the pressure of the ALD chamber is set at 0.5-5 torr. More specifically, the temperature of the ALD chamber can be set at 250 °C, 280 °C, 320 °C, 350 °C, or 400 °C, and the pressure of the ALD chamber can be set at 0.5 torr, 1 torr, 1.5 torr, 2 torr, 2.5 torr, 3 torr, 3.5 torr, 4 torr, 4.5 torr, or 5 torr.

[0068] In specific embodiments, in forming the third zirconium oxide passivation layer 305 having a rough surface, the specific process of sequentially circulating the reaction gas composed of the zirconium source gas and the organic blocking agent, the purge gas, the oxygen source gas, and the purge gas into the ALD chamber is as follows: the flow rate of the reaction gas composed of the zirconium source gas and the organic blocking agent is 60-120 seem, and the time for each circulation of the reaction gas composed of the zirconium source gas and the organic blocking agent is 3-7 seconds, wherein the flow rate of the organic blocking agent accounts for 8-15% of the reaction gas composed of the zirconium source gas and the organic blocking agent, and 1-4 seconds is maintained before the purge gas is introduced and after the circulation of the reaction gas composed of the zirconium source gas and the organic blocking agent is stopped, then the purge gas is introduced, the flow rate of the purge gas is 3000-8000 seem, and the time for introducing the purge gas is 10-20 seconds, then the oxygen source gas is introduced, the flow rate of the oxygen source gas is 60-120 seem, and the time for each circulation of the oxygen source gas is 3-7 seconds, and 1-4 seconds is maintained before the purge gas is introduced and after the circulation of the oxygen source gas is stopped, then the purge gas is introduced, the flow rate of the purge gas is 3000-8000 seem, and the time for introducing the purge gas is 10-20 seconds, so as to form the third zirconium oxide passivation layer 305 having a rough surface, and the roughness of the rough surface of the third zirconium oxide passivation layer 305 is 0.3-0.4 microns.

[0069] In a more specific embodiment, the third zirconium oxide passivation layer 305 is formed by optimizing the specific preparation process of the third zirconium oxide passivation layer 305 to form a third zirconium oxide passivation layer 305 with a suitable thickness, and to make the roughness of the rough surface of the second zirconium oxide passivation layer 305 be 0.3-0.4 microns.

[0070] As shown in FIG. 4, then a third metal layer 306 is formed on the third zirconium oxide passivation layer 305.

[0071] In a specific embodiment, the method for forming the third metal layer 306 is one of magnetron sputtering, thermal evaporation, and electron beam evaporation, and the material of the third metal layer 306 is one or more of copper, aluminum, silver, titanium, and palladium.

[0072] In a specific embodiment, the method for forming the third metal layer 306 is magnetron sputtering, and the material of the third metal layer 306 is copper.

[0073] In a specific embodiment, the two third metal layers 306 adjacent to the Micro-LED units 100 are in direct physical contact.

[0074] In a specific embodiment, by optimizing the specific process parameters of the first zirconium oxide passivation layer 301, the first metal layer 302, the second zirconium oxide passivation layer 303, the second metal layer 304, the third zirconium oxide passivation layer 305, and the third metal layer 306, the surface roughness of the second zirconium oxide passivation layer 303 is greater than the surface roughness of the first zirconium oxide passivation layer 301, the surface roughness of the third zirconium oxide passivation layer 305 is greater than the surface roughness of the second zirconium oxide passivation layer 303, and the thickness of the first zirconium oxide passivation layer 301 is greater than the thickness of the second zirconium oxide passivation layer 303 and the thickness of the third zirconium oxide passivation layer 305. By arranging the above structure, a closely bonded zirconium oxide passivation layer / metal layer stack structure can be formed, and metal layer peeling can be avoided.

[0075] In a specific embodiment, the thickness of each of the first metal layer 302, the second metal layer 304, and the third metal layer 306 is less than the thickness of the first zirconium oxide passivation layer, and greater than the thickness of the second zirconium oxide passivation layer 303 and / or the thickness of the third zirconium oxide passivation layer 305, for example, the thickness of each of the first metal layer 302, the second metal layer 304, and the third metal layer 306 is greater than the thickness of the second zirconium oxide passivation layer 303 and greater than the thickness of the third zirconium oxide passivation layer 305, and the conductive performance of each metal layer can be ensured, and the first metal layer 302 can reflect the light emitted by the Micro-LED chip, thereby greatly improving the light emission efficiency of the Micro-LED chip.

[0076] As shown in FIG. 5, then a first electrode 401 and a second electrode 402 are formed, the first electrode 401 is electrically connected with the second semiconductor layer 103 of the Micro-LED unit 100, and the second electrode 402 is electrically connected with the first metal layer 302, the second metal layer 304 and the third metal layer 306.

[0077] In a specific embodiment, a first opening exposing the second semiconductor layer 103 is formed on each of the Micro-LED units 100, an insulating layer (not shown) is formed on the sidewall of the first opening 101, and then the first electrode 401 is formed in the first opening.

[0078] In a specific embodiment, the first opening is formed by a wet etching process or a dry etching process.

[0079] In a specific embodiment, the insulating layer is any suitable dielectric material, such as silicon oxide, silicon nitride, aluminum oxide, etc., and the insulating layer is formed by a PECVD or ALD deposition process.

[0080] In a specific embodiment, the first electrode 401 is a copper electrode, which is formed by a thermal evaporation, magnetron sputtering or electroplating process.

[0081] As shown in FIG. 5, a second opening exposing the first zirconium oxide passivation layer 301 is formed on one of the M Micro-LED units 100, the sidewall of the second opening exposes the first metal layer 302, the second metal layer 304 and the third metal layer 306, and a second electrode 402 is formed in the second opening.

[0082] In a specific embodiment, the second opening is formed by a wet etching process or a dry etching process.

[0083] In a specific embodiment, the second electrode 402 is a copper electrode, which is formed by a thermal evaporation, magnetron sputtering or electroplating process.

[0084] As shown in FIG. 6, the carrier substrate 200 is removed, and a conductive layer 600 is formed on the first semiconductor layer 101, the first semiconductor layer 101 is electrically connected with the first metal layer 302, the second metal layer 304 and the third metal layer 306 through the conductive layer 600.

[0085] In a specific embodiment, the conductive layer 600 is a metal copper layer, which is formed by a thermal evaporation, magnetron sputtering or electroplating process.

[0086] As shown in FIG. 6, the application also provides a preparation method of the multi-Micro-LED chip package, which is manufactured by the above preparation method of the multi-Micro-LED chip package.

[0087] In other preferred technical solutions, the application provides a preparation method of a multi-Micro-LED chip package, which comprises the following steps:

[0088] A light-emitting wafer is provided, which comprises a first semiconductor layer, a light-emitting quantum well layer, and a second semiconductor layer.

[0089] The light-emitting wafer is subjected to cutting treatment to form a plurality of Micro-LED units.

[0090] A carrier substrate is provided, and M Micro-LED units are transferred to the carrier substrate, where M is greater than or equal to 6.

[0091] Then, the carrier substrate is placed in an ALD chamber, and zirconium source gas, cleaning gas, oxygen source gas, and cleaning gas are sequentially circulated into the ALD chamber, and then reaction gas composed of zirconium source gas and organic blocking agent, cleaning gas, oxygen source gas, and cleaning gas are sequentially circulated into the ALD chamber to form a first zirconium oxide passivation layer with a rough surface, which covers the upper surface and the side surface of each Micro-LED unit.

[0092] Then, a first metal layer is formed on the first zirconium oxide passivation layer.

[0093] Then, the carrier substrate is placed in an ALD chamber again, and reaction gas composed of zirconium source gas and organic blocking agent, cleaning gas, oxygen source gas, and cleaning gas are sequentially circulated into the ALD chamber to form a second zirconium oxide passivation layer with a rough surface, which covers the first metal layer.

[0094] Then, a second metal layer is formed on the second zirconium oxide passivation layer.

[0095] Then, the carrier substrate is placed in an ALD chamber again, and reaction gas composed of zirconium source gas and organic blocking agent, cleaning gas, oxygen source gas, and cleaning gas are sequentially circulated into the ALD chamber to form a third zirconium oxide passivation layer with a rough surface, which covers the second metal layer.

[0096] Then, a third metal layer is formed on the third zirconium oxide passivation layer.

[0097] Then, a first electrode and a second electrode are formed, the first electrode is electrically connected with the first semiconductor layer of the Micro-LED unit, and the second electrode is electrically connected with the first metal layer, the second metal layer and the third metal layer.

[0098] The carrier substrate is removed, a conductive layer is formed on the second semiconductor layer, and the second semiconductor layer is electrically connected with the first metal layer, the second metal layer and the third metal layer through the conductive layer.

[0099] In a more preferred technical solution, in the process of forming the first zirconium oxide passivation layer, the second zirconium oxide passivation layer and the third zirconium oxide passivation layer, the zirconium source gas is one of tetrakis tert-butyl zirconium, zirconium chloride and zirconium iodide, and the organic blocking agent is one of methoxytrimethylsilane, trimethylchlorosilane and chlorosilane.

[0100] In a more preferred technical solution, in the process of forming the first zirconium oxide passivation layer, the second zirconium oxide passivation layer and the third zirconium oxide passivation layer, the cleaning gas is one of nitrogen, argon and helium, and the oxygen source gas is one of water vapor, oxygen, ozone and hydrogen peroxide.

[0101] In a more preferred technical solution, the method for forming the first metal layer, the second metal layer and the third metal layer is one of magnetron sputtering, thermal evaporation and electron beam evaporation, and the material of the first metal layer, the second metal layer and the third metal layer is one or more of copper, aluminum, silver, titanium and palladium.

[0102] In a more preferred technical solution, the surface roughness of the second zirconium oxide passivation layer is greater than the surface roughness of the first zirconium oxide passivation layer, and the surface roughness of the third zirconium oxide passivation layer is greater than the surface roughness of the second zirconium oxide passivation layer.

[0103] In a more preferred technical solution, the thickness of the first zirconium oxide passivation layer is greater than the thickness of the second zirconium oxide passivation layer, and the thickness of the first zirconium oxide passivation layer is greater than the thickness of the third zirconium oxide passivation layer.

[0104] In a more preferred technical solution, the thickness of each of the first metal layer, the second metal layer and the third metal layer is less than the thickness of the first zirconium oxide passivation layer, and greater than the thickness of the second zirconium oxide passivation layer and / or the thickness of the third zirconium oxide passivation layer.

[0105] In a more preferred technical solution, a first opening exposing the first semiconductor layer is formed on each Micro-LED unit, an insulating layer is first formed on the sidewall of the first opening, and then the first electrode is formed in the first opening.

[0106] In a more preferable technical solution, a second opening exposing the first zirconium oxide passivation layer is formed on one of the M Micro-LED units, a sidewall of the second opening exposes the first metal layer, the second metal layer and the third metal layer, and a second electrode is formed in the second opening.

[0107] In a more preferable technical solution, the application further provides a preparation method of a multi-Micro-LED chip package, which is manufactured by the above preparation method of a multi-Micro-LED chip package.

[0108] In the preparation method of the multi-Micro-LED chip package, zirconium oxide is used as the passivation layer of the Micro-LED chip. Since the density of zirconium oxide is high, the Micro-LED chip can be more effectively protected. By optimizing the preparation process of the first zirconium oxide passivation layer, the second zirconium oxide passivation layer and the third zirconium oxide passivation layer, the surface of each zirconium oxide passivation layer is rough, which can effectively improve the bonding performance of the metal layer and the zirconium oxide passivation layer, thereby effectively avoiding the peeling of the metal layer. Due to the existence of the rough structure, the interface area between the first metal layer and the first zirconium oxide passivation layer is greatly increased, and when the Micro-LED chip emits light, the light irradiated to the interface can be reflected multiple times and then emitted from the light-emitting surface of the Micro-LED chip, thereby greatly improving the light-emitting efficiency of the Micro-LED chip. In the present application, the existence of the first metal layer, the second metal layer and the third metal layer provides multiple conductive paths between each Micro-LED chip and the second electrode. In the subsequent use process, even if one conductive path is broken, it does not hinder the normal use of each Micro-LED chip.

[0109] The above embodiments only exemplarily illustrate the principles and effects of the present application, and are not used to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes completed by those skilled in the art without departing from the spirit and technical thought of the present application should be covered by the claims of the present application.

Claims

1. A method for fabricating a multi-Micro-LED chip package, characterized in that: The preparation method of the multi-Micro-LED chip package comprises the following steps: A light-emitting wafer is provided, which comprises a first semiconductor layer, a light-emitting quantum well layer, and a second semiconductor layer; The light-emitting wafer is subjected to cutting treatment to form a plurality of Micro-LED units; A carrier substrate is provided, and M Micro-LED units are transferred to the carrier substrate, where M is greater than or equal to 6; Then, the carrier substrate is placed in an ALD chamber, and zirconium source gas, cleaning gas, oxygen source gas, and cleaning gas are sequentially circulated into the ALD chamber, and then reaction gas composed of zirconium source gas and organic blocking agent, cleaning gas, oxygen source gas, and cleaning gas are sequentially circulated into the ALD chamber to form a first zirconium oxide passivation layer with a rough surface, which covers the upper surface and the side surface of each Micro-LED unit; Then, a first metal layer is formed on the first zirconium oxide passivation layer; Then, the carrier substrate is placed in an ALD chamber again, and reaction gas composed of zirconium source gas and organic blocking agent, cleaning gas, oxygen source gas, and cleaning gas are sequentially circulated into the ALD chamber to form a second zirconium oxide passivation layer with a rough surface, which covers the first metal layer; Then, a second metal layer is formed on the second zirconium oxide passivation layer; Then, the carrier substrate is placed in an ALD chamber again, and reaction gas composed of zirconium source gas and organic blocking agent, cleaning gas, oxygen source gas, and cleaning gas are sequentially circulated into the ALD chamber to form a third zirconium oxide passivation layer with a rough surface, which covers the second metal layer; Then, a third metal layer is formed on the third zirconium oxide passivation layer; Then, a first electrode and a second electrode are formed, the first electrode is electrically connected to the first semiconductor layer of the Micro-LED unit, and the second electrode is electrically connected to the first metal layer, the second metal layer, and the third metal layer; The carrier substrate is removed, and a conductive layer is formed on the second semiconductor layer, and the second semiconductor layer is electrically connected to the first metal layer, the second metal layer, and the third metal layer through the conductive layer.

2. The method of claim 1, wherein the method further comprises: In the process of forming the first zirconium oxide passivation layer, the second zirconium oxide passivation layer, and the third zirconium oxide passivation layer, the zirconium source gas is one of tetrakis-tert-butoxyzirconium, zirconium chloride, and zirconium iodide, and the organic blocking agent is one of methoxytrimethylsilane, trimethylchlorosilane, and monochlorosilane.

3. The method of claim 1, wherein the method further comprises: In the process of forming the first zirconium oxide passivation layer, the second zirconium oxide passivation layer, and the third zirconium oxide passivation layer, the cleaning gas is one of nitrogen, argon, and helium, and the oxygen source gas is one of water vapor, oxygen, ozone, and hydrogen peroxide.

4. The method of claim 1, wherein the method further comprises: The method for forming the first metal layer, the second metal layer and the third metal layer is one of magnetron sputtering, thermal evaporation and electron beam evaporation, and the material of the first metal layer, the second metal layer and the third metal layer is one or more of copper, aluminum, silver, titanium and palladium.

5. The method of claim 1, wherein the method further comprises: The surface roughness of the second zirconium oxide passivation layer is greater than that of the first zirconium oxide passivation layer, and the surface roughness of the third zirconium oxide passivation layer is greater than that of the second zirconium oxide passivation layer.

6. The method of claim 1, wherein the method further comprises: The thickness of the first zirconium oxide passivation layer is greater than that of the second zirconium oxide passivation layer, and the thickness of the first zirconium oxide passivation layer is greater than that of the third zirconium oxide passivation layer.

7. The method of claim 6, wherein the method further comprises: The thickness of each of the first metal layer, the second metal layer and the third metal layer is less than that of the first zirconium oxide passivation layer, and greater than that of the second zirconium oxide passivation layer and / or that of the third zirconium oxide passivation layer.

8. The method of claim 1, wherein the method further comprises: A first opening exposing the first semiconductor layer is formed on each of the Micro-LED units, an insulating layer is formed on the sidewall of the first opening, and then the first electrode is formed in the first opening.

9. The method of claim 8, wherein the method further comprises: A second opening exposing the first zirconium oxide passivation layer is formed on one of the M Micro-LED units, the sidewall of the second opening exposes the first metal layer, the second metal layer and the third metal layer, and a second electrode is formed in the second opening. 10.A method for manufacturing a multi-Micro-LED chip package, characterized in that, The preparation method of the multi-Micro-LED chip package body is manufactured by the preparation method of any one of claims 1-9.

Images