37results about How to "Reliable growth" patented technology

Two or more outer-layer dummy conductors are successively arranged at predetermined intervals in the height direction, thereby forming a plurality of outer-layer dummy groups. Given that an interval between the adjacent outer-layer dummy conductors within each of the outer-layer dummy groups is d and an interval between the adjacent outer-layer dummy groups is g, g is greater than d. On that condition, the outer-layer dummy groups can be positioned satisfactorily apart away from each other, while plating deposition points are ensured. As a result, pressing of inner electrodes through the outer-layer dummy conductors can be relieved, whereby the distance between the inner electrodes can be prevented from being locally shortened and a reduction of BDV can be prevented.

In a monolithic ceramic electronic component, given that an interval between outer-layer dummy conductors adjacent to each other in an outer layer portion is d1, and that an interval between first and second inner electrodes adjacent to each other in an inner layer portion is d2, 1.7d2≦d1 is satisfied. By reducing a density of the outer-layer dummy conductors in the outer layer portion on that condition, pressing of the inner electrodes through the outer-layer dummy conductors is relieved in a pressing step before firing. As a result, a distance between the inner electrodes can be prevented from being locally shortened. It is hence possible to effectively reduce and prevent degradation of reliability of the monolithic ceramic electronic component, e.g., a reduction of BDV.

In a monolithic ceramic electronic component, where a distance in the height direction between one of outer-layer dummy conductors in an outer layer portion, which is arranged closest to an inner layer portion, and one of inner electrodes in the inner layer portion, which is arranged closest to the outer layer portion, is b, and an opposing distance between an adjacent pair of first inner electrodes and second inner electrodes in the height direction is t, 2t≦b is satisfied, such that the outer-layer dummy conductors can be spaced a sufficient distance away from the inner electrodes, and such that the distance between the inner electrodes can be prevented from being reduced when the inner electrodes arranged in overlapping relation to the outer-layer dummy conductors are pressed in a pressing step before firing, and a reduction of BDV can be prevented.

The invention relates to a semiconductor device comprising a semiconductor substrate and having on its top at least a Thin Strain Relaxed Buffer, consisting essentially of a stack of three layers, characterized in that the Thin Strain Relaxed Buffer is not an active part of the semiconductor device and in that said three layers defining the Thin Strain Relaxed Buffer have an essentially constant Ge concentration, said three layers being: a first epitaxial layer of Si1-xGex, x being the Ge concentration; a second epitaxial layer of Si1-xGex: C on said first epitaxial layer, the amount of C being at least 0.3 %; a third epitaxial layer of Si1-xGex on said second layer.

Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.

This application discloses a method for ecological restoration of rock slopes. A method for ecological restoration of rock slopes. The first nutrient base and the second nutrient base are sprayed on the rock slope. The first nutrient base is formed between the bottom and the edge of the rock. The slope is in contact with the first substrate layer, and the second nutrient base forms a second substrate layer above the first substrate layer, and the thickness of the first substrate layer is 3 to 5 times that of the second substrate layer; the second nutrient substrate includes seeds. In the present application, the first matrix layer that is better matched with the rock slope can be formed by spraying the first nutrient base, and the second matrix layer above the first matrix layer can be formed by spraying the second nutrient base containing seeds. The thickness of the matrix layer is 3 to 5 times that of the second matrix layer. The thicker first matrix layer can not only reliably connect the rock slope, but also provide enough depth for the seeds of the second matrix layer to grow reliably.

A growth crucible (2) for depositing on a seed crystal substrate (5) a silicon carbide single crystal (6) using a sublimate gas of a silicon carbide raw material (11) is disposed inside of an outer crucible (1). During the course of silicon carbide single crystal, a silicon raw material (22) is continuously fed from outside into a space between the growth crucible and the outer crucible for the purpose of vaporizing the silicon raw material. An atmosphere gas surrounding the growth crucible is constituted of a silicon gas. The pressure of the atmosphere silicon gas is controlled to suppress a variation in the composition of the sublimate gas within the growth crucible to thereby grow a large-sized silicon carbide single crystal with few crystal defects on the seed crystal substrate reliably at a high growth rate.

A milling device is provided, having a milling tool that rotates about a tool rotation axis, wherein the milling device has a slide, and in that the milling tool is held on a pivot axis that extends transversely, in particular perpendicular, to the tool rotation axis and through the slide, wherein the slide is designed and the position of the milling tool is selected such that, during milling, a traversing movement is effected by manually moving the slide and advance is effected by pivoting the milling tool about the pivot axis. Also provided is a method for milling within a slot of a component, in particular within a blade root receiving slot of a turbomachine, using a milling device.

The invention discloses a method for preparing calcium doped REBCO (rare earth barium copper oxygen) high temperature superconductivity standard single crystal. The method comprises steps of a) preparing powder of RE123 phase; b) preparing a precursor; c) putting a seed crystal on the upper surface of the precursor; and d) putting the precursor and the seed crystal in a crystal growth furnace for fusing the texture so as to grow a high temperature superconductivity material, wherein the precursor in step b) is a cylindrical precursor formed through uniformly mixing the powder of RE123 phase obtained in step a) according to the proportion of RE123+(0-15)wt%CaCO3+(0.3-1.5)wt%CeO2 and then pressing. According to the method, the calcium doped REBCO high temperature superconductivity standard single crystal is prepared through fusing the texture of top seed crystal, in the preparation process, the CaCO3 only needs to be mixed in the precursor powder so as to be pressed into the cylindrical precursor. The method is simple, easy to operate, completely repeatable and controllable.

The present invention relates to a method for manufacturing metal timepiece components, characterised in that it comprises the steps of forming a multi-level photoresist mould, by means of a UV-LIGA type method, and of galvanically depositing a layer of at least one metal starting from at least two conductive layers so as to form a block that substantially reaches the top surface of the photoresist.

The invention relates to a quick industrialized seedling raising method for pear trees. The method comprises the steps of cultivation of stock seedlings, scion preparation, industrialized grafting andnursery stock conservation and conveying; good pear trees are selected as stocks and scions, the stocks and scions are prepared and placed in a low-temperature refrigerating chamber for use, a grafting operation platform is arranged in a workshop, and the platform is divided into a stock stacking area, a scion stacking area, an after-grafting nursery stock stacking area and a cut binding area; stock seedlings and scion seedlings are pruned before grafting; a double-tongue grafting method is adopted for the stocks and scions, grafting cuts are fused by candles, bound and then tied, and nurserystock variety labels are pasted; the grafted nursery stocks are placed in the refrigerating chamber for low temperature conservation, and the nursery stocks which need to be conveyed for a long distance are packaged and conveyed by selecting good-quality paper boxes. The industrialized grafting method has the advantages that the production efficiency is high, the survival rate of the nursery stocks is high, the nursery stocks grow quickly, the death rate in the conveying process is low, the cost is low, and quick propagation is achieved. The technical method is convenient to use, high in practicability, good in effect and broad in application prospect, saves labor and time and has a positive promotion effect on production of the nursery stocks of the pear trees.

A high performance computing system and method communicate data packets between computing nodes on a multi-lane communications link using a modified header bit encoding. Each data packet is provided with flow control information and error detection information, then divided into per-lane payloads. Sync header bits for each payload are added to the payloads in non-adjacent locations, thereby decreasing the probability that a single correlated burst error will invert both header bits. The encoded blocks that include the payload and the interspersed header bits are then simultaneously transmitted on the multiple lanes for reception, error detection, and reassembly by a receiving computing node.