High tension shock type swatter for mosquitoes and flies
A high-voltage power grid, mosquito and fly technology, applied in the field of electronic technology applications, can solve problems such as high prices, deformed fetuses of pregnant women, and miscarriages
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- Publication Date
- 2012-07-11
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2
Abstract
Description
technical field
[0001] The invention belongs to the application field of electronic technology, and relates to a high-voltage electric shock type mosquito killing fly swatter. Background technique
[0002] In order to protect the environment, we advocate the use of physical methods to kill mosquitoes and flies, that is, do not use any chemicals that are harmful to the human body or pollute the environment, such as: mosquito coils, mosquito coils, pyrethrum, various insecticides, mosquito repellent liquid, sticky fly paper, Place poisonous baits and other methods to eliminate flies. Although these methods have certain effects, they will cause a certain degree of pollution to the environment, because general chemical mosquito repellents and fly killing products can easily cause air pollution, and chemical mosquito and fly killing methods are used. , It is easy to cause deformed fetuses, miscarriages, and sometimes even cause children to eat by mistake. It is not easy to use fo...
Examples
Embodiment Construction
[0014] According to attached figure 1 The circuit working principle diagram and accompanying drawings of the high-voltage electric shock mosquito-killing fly swatter are shown, and the implementation is carried out according to the connection relationship between the components in the circuit described in the summary of the invention and the technical parameters of the components described in the implementation mode. The present invention can be realized.
[0015] Component selection and technical parameters
[0016] VT1 selects a medium-power PNP transistor, the model is a PNP medium-power transistor such as 2SC9012;
[0017] 1N4007 silicon rectifier diodes for D1~D3;
[0018] Resistors R1~R2 are all made of RTX-1 / 8W carbon film resistors, and the resistance values are 270Ω and 680Ω respectively;
[0019] C1~C3 use CL11-630V polyester capacitors, and the capacity of the three capacitors is 0.33μF / 630V;
[0020] LED selection ¢5mm red light-emitting diode;
[0021] AN i...