Fast Recovery Diodes with Schottky Contact Terminations

A Schottky contact and recovery diode technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems affecting the reliability of fast recovery diodes, achieve optimal carrier distribution, reduce injection efficiency, and improve reliability sexual effect

Inactive Publication Date: 2015-09-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Numerous research results have shown that the design of the termination region seriously affects the reliability of fast recovery diodes

Method used

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  • Fast Recovery Diodes with Schottky Contact Terminations
  • Fast Recovery Diodes with Schottky Contact Terminations
  • Fast Recovery Diodes with Schottky Contact Terminations

Examples

Experimental program
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Embodiment Construction

[0016] A fast recovery diode with a Schottky contact terminal, the cell structure of which is figure 2 shown, including N + Cathode region 60, located in N + The cathode metal 70 on the back side of the cathode region 60 is located at N + The N-type drift region 40 above the cathode region 60 is located in the N + The N-type field buffer layer 50 between the cathode region 60 and the N-type drift region 40; the surface of the N-type drift region 40 has a cellular P-type region 20, and the surface of the cellular P-type region 20 has an anode metal 10; the device terminal region Equipotential rings 31 , first field limiting rings 32 and second field limiting rings 33 are distributed on the surface of the N-type drift region 40 from near to far from the cellular P-type region 20 . The surface of the equipotential ring 31 has a Schottky metal 80 in contact therewith, and the contact mode between the Schottky metal 80 and the surface of the equipotential ring 31 is a Schottky ...

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Abstract

The invention discloses a fast recovery diode with a Schottky contact terminal, belonging to the technical field of power semiconductor devices. According to the fast recovery diode with the Schottky contact terminal, equipotential ring contact metal is changed into Schottky contact metal on the basis of the conventional fast recovery diode, so that the injection efficiency at a transition region is reduced, the carrier distribution of the terminal part is optimized, the turn-off loss is reduced and the reliability in a reverse recovery process is improved. The fast recovery diode is suitable for the field of semiconductor power devices and power integrated circuits from small power to high power.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a power device terminal structure. Background technique [0002] Insulated gate bipolar transistor (IGBT) is a new type of power electronic device combining MOS field effect and bipolar transistor. It not only has the advantages of easy driving and simple control of MOSFET, but also has the advantages of low turn-on voltage of power transistor, large on-state current and low loss. It has become one of the core electronic components in modern power electronic circuits. When driving an inductive load, the fast recovery diode is usually connected in antiparallel with the IGBT to connect the current of the inductive load. Therefore, the characteristics of the fast recovery diode will seriously affect the performance of the whole system. [0003] Since the introduction of high-power fast-recovery diodes, a lot of work has been devoted to reducing the diode’s turn-o...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L29/861H01L29/08
Inventor李泽宏杨文韬宋洵奕宋文龙张金平任敏
OwnerUNIV OF ELECTRONICS SCI & TECH OF CHINA