A method for improving die loss during dicing of GAAS-based LED chips
A technology of LED chips and dies, which is applied in the manufacture of semiconductor devices, electrical components, and semiconductor/solid-state devices, etc., can solve problems such as no specific solutions for dies, so as to improve stickiness, increase product output, and improve The effect of dropping the die
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Embodiment 1
[0033] A method for improving die loss during the cutting process of GaAs-based LED chips, the steps of which are:
[0034] a) Half-cut the surface of the chip; the height of the half-cut knife is set to 130 μm, the cutting speed is 50 mm / s, the protrusion of the knife edge is 550 μm, the width of the cutting groove is 25 μm, and the depth is 20% of the chip thickness. b) Baking the chip after the half-cut operation; set the baking temperature to 50°C and the baking time to 100s. c) After the chip is baked, carry out the blue film laminating operation; set the heating temperature of the film laminating machine to 50°C, and use the blue film of SPV-224 220mm*100m. d) After the film is pasted, the chips are then baked: set the baking temperature to 70°C and the baking time to 100s. e) After the film is baked, perform a full cut on the half-cut knife mark: the full-cut knife height is set to 60 μm, the cutting speed is 20 mm / s, the blade extension is 560 μm, and the cutting groo...
Embodiment 2
[0036] The difference from Example 1 is that the baking temperature in step b) is 50°C and the baking time is 110s. The baking temperature in step d) is 72°C, and the baking time is 110s. The cutting speed of full cut in step e) is 30mm / s.
Embodiment 3
[0038] The difference from Example 1 is that the baking temperature in step b) is 53°C and the baking time is 110s. The baking temperature in step d) is 73°C, and the baking time is 110s. In step e), the cutting speed of the full cut is 30 mm / s, and the knife height is 80 μm.
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