Cu-MTD etching solution for liquid crystal panel and preparation method thereof

Abstract

The invention discloses a Cu-MTD etching solution for liquid crystal panels and a preparation method thereof, belonging to the technical field of copper etching solutions, comprising the following components by weight: 5-18% hydrogen peroxide, 0.01-1% stabilizer, 1-12% organic acid, 1-10% organic base, 0.01-2% corrosion inhibitor, and the rest being ultrapure water. The copper etching solution has the advantages of strong compatibility, stable etching efficiency and good etching effect, and can effectively solve the problems in the prior art.

Description

Technical Field

[0001] The invention belongs to the technical field of liquid crystal panel etching liquid, and in particular relates to a Cu-MTD etching liquid for a liquid crystal panel and a preparation method thereof. Background Art

[0002] Thin-film transistor liquid crystal display (TFT-LCD) glass substrate is a key component of liquid crystal display screens. With the continuous expansion of the electronic consumer products market, the high resolution, large size, ultra-thin design, flexible display, amorphous silicon technology, etc. of TFT-LCD glass substrates are also developing rapidly.

[0003] As a highly conductive material, copper metal is used as a control material for key parts in the long-term development of integrated circuit manufacturing processes. However, copper metal has poor adhesion to the glass surface, so a metal film layer, a metal titanium layer or its alloy needs to be laid between the copper metal layer and the glass substrate. At the same time, in order to prevent oxidation on the surface of the copper metal layer, an anti-alloy layer is laid on it to form a variety of two-layer or three-layer film structures such as Cu / Mo, Cu / MoNb, Cu / MTD, MoNb / Cu / MoNb, MTD / Cu / MTD, etc.

[0004] However, the existing copper etching solution is not compatible with the characteristics of multiple film structures of two or three layers at the same time, resulting in uneven etching rate, protrusion of the top metal, missing corners of the lower metal or indentation of the bottom metal, and metal layer drilling and other undesirable phenomena. At the same time, the added related metal corrosion inhibitor is easily oxidized under strong oxidizing properties, which is not conducive to the mutual coordination between components. In addition, the combination of the main agent and the supplement of the existing etching solution can extend the service life of the copper etching solution to a certain extent, but the economic cost increases, the film compatibility is poor, the metal line width cannot be accurately controlled, and the supplement needs to be added in time during use, making the etching process complicated. Summary of the invention

[0005] In view of the above-mentioned deficiencies in the prior art, the present invention provides a Cu-MTD etching solution for liquid crystal panels and a preparation method thereof. The copper etching solution has the advantages of strong compatibility, stable etching efficiency and good etching effect, and can effectively solve the problems in the prior art.

[0006] To achieve the above purpose, the technical solution adopted by the present invention to solve the technical problem is:

[0007] A Cu-MTD etching solution for a liquid crystal panel comprises the following components in weight proportion: 5-18% hydrogen peroxide, 0.01-1% stabilizer, 1-12% organic acid, 1-10% organic base, 0.01-2% corrosion inhibitor, and the rest is ultrapure water;

[0008] Further, a Cu-MTD etching solution for a liquid crystal panel comprises the following components in weight proportion: 8-15% hydrogen peroxide, 0.02-1% stabilizer, 2-9% organic acid, 2-9% organic base, 0.01-2% corrosion inhibitor, and the rest is ultrapure water;

[0009] Further, the stabilizer includes at least one of phenylurea, hydroxyethylidene diphosphonic acid, phenylcarbonyl diamide or 2-hydroxyphosphonoacetic acid;

[0010] More preferably, the stabilizer is phenylurea. The addition of an appropriate amount of phenylurea can slow down the decomposition of hydrogen peroxide, improve the stability of the hydrogen peroxide component, maintain a stable etching rate, and increase the service life of the entire solution.

[0011] Furthermore, the organic acid includes at least one of malonic acid, malic acid, L-lactic acid, iminooxalic acid, oxalic acid, iminodiacetic acid, and acetamidomalonic acid diacetic acid.

[0012] More preferably, the organic acid is at least one of malonic acid, malic acid and L-lactic acid.

[0013] More preferably, the organic acid is a mixture of malonic acid, malic acid and L-lactic acid.

[0014] More preferably, the mass fraction of L-lactic acid in the organic acid mixture is ≥80%.

[0015] Further, the organic base includes at least one of isobutanolamine, menthanediamine, N-methylformamide, triisopropanolamine, diethylaminopropylamine, and diglycolamine;

[0016] More preferably, the organic base is at least one of N-methylformamide, triisopropanolamine and isobutanolamine.

[0017] The organic base mentioned above cooperates with the organic acid mentioned above to gently adjust the pH; the organic base contains a sterically hindered amine, which serves as a complexing auxiliary agent of the organic acid to coordinate with the organic acid to complex metal ions to form a more stable compound.

[0018] More preferably, the organic base is triisopropanolamine.

[0019] Among them, triisopropanolamine has more side chains and a larger structure. According to long-term experiments, it can form a more stable complex with metal ions. At the same time, triisopropanolamine also has some corrosion inhibitor functions, protecting the metal layer and inhibiting metal corrosion. It was also found through experiments that triisopropanolamine has good solubility and can be used as a cleaning agent, making it easy to clean the etched substrate in clean water.

[0020] Further, the corrosion inhibitor includes at least one of benzotriazole, 5-aminotetrazolyl, 1,2,4-triazole, benzopyrrole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, quinoline, and hydroxymethylbenzotriazole;

[0021] More preferably, the corrosion inhibitor is a mixture of benzotriazole and 5-aminotetrazolyl.

[0022] At present, the two corrosion inhibitors of benzotriazole and 5-aminotetrazole are preferred in the formula. The heteroatoms, benzene rings and triazole rings in the molecular structure of 5-aminotetrazole and benzotriazole can form double bonds with copper, forming a tightly arranged anti-corrosion protective film on the surface of copper and its MTD alloy. For example, polar groups such as amino groups can better bond with metals, and the steric hindrance effect of aromatic ring groups can form a tight protective film. Its special resonance structure weakens the chemical adsorption of metals and reduces corrosion inhibition.

[0023] The preparation method of the Cu-MTD etching solution for liquid crystal panels comprises the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing.

[0024] The beneficial effects produced by the present invention are:

[0025] In the present application, hydrogen peroxide is used as the main oxidant to oxidize the metal element, so that the etching rate and etching angle of Cu-MTD are controlled within a suitable range; a stabilizer is used to stabilize hydrogen peroxide. During the etching process, the concentration of copper ions and other metal ions in the etching solution will increase, and the etching rate of the hydrogen peroxide oxidation reaction will slowly decrease. The addition of the stabilizer in the present application can effectively prolong the oxidation effect of hydrogen peroxide during the etching process; an organic acid is used in the present application, which does not introduce water polluting elements such as nitrogen, phosphorus and sulfur, is green and environmentally friendly, and is easy to control the pH value of the etching solution; an alcohol amine organic base is selected in the present application to complex and neutralize part of the organic acid to avoid the pH of the etching solution being too low, resulting in uneven etching and metal residues on the glass substrate; at the same time, the organic base can form a complex with copper ions, increase the selectivity of the copper etching solution, so that it only works on copper materials, and has little effect on other metal materials; the corrosion inhibitor in the present application plays a protective role, and forms a protective film on the metal surface by interacting with metal ions, thereby inhibiting the occurrence of metal corrosion, and can control the corrosion rate of the etching solution, making the etching process more stable and controllable. In this application, an organic corrosion inhibitor is selected. On the one hand, the presence of an oxidant in the etching solution will react with Cu-MTD in a primary cell, changing the charge state and interface properties of the metal surface, stabilizing the energy of the metal surface, increasing the activation energy of the corrosion reaction, and slowing down the corrosion rate. On the other hand, there are vacancies on the metal surface. In an acidic aqueous solution, the polar groups in the corrosion inhibitor form coordination bonds with the metal through the vacancies to slow down corrosion. Of course, there are also certain interactions between corrosion inhibitors.

[0026] The etching solution in the present application does not contain elements such as fluorine, phosphorus and sulfur, is green and environmentally friendly, and will not cause any impact on the environment; and the etching solution in the present application has the advantages of stable and uniform etching (stable side etching amount and angle); long service life, and large copper dissolution amount (10000ppm).

[0027] The etching solution of the present application, because of the presence of organic acid and hydrogen peroxide, enables the corrosion inhibitor to increase charge transfer in the acidic etching solution and reduce the corrosion rate of each metal. In order to form a suitable cone angle and CD Loss, as well as a good morphology structure, each formula component and addition amount will be adjusted to control the etching rate of metal copper and MTD alloy. Organic acid and organic base can be used as auxiliary corrosion inhibitors, and the adsorption active sites contained in the molecules also have a certain effect on metal inhibition. For example, the organic base isopropanolamine is biased towards the protection of metal copper, and diethylaminopropylamine has a poor protection effect on MTD and will not inhibit MTD corrosion. At the same time, by adjusting the addition amount of each effective component in this formula, the amount of side etching can be controlled to achieve the effect of accurately controlling the metal line width.

[0028] Attached photos:

[0029] Figure 1It is the microscopic morphology picture in Example 1;

[0030] Figure 2 It is the microscopic morphology picture in Example 2;

[0031] Figure 3 It is the microscopic morphology picture in Example 3;

[0032] Figure 4 It is the microscopic morphology picture in Example 4;

[0033] Figure 5 It is the microscopic morphology picture in Example 5;

[0034] Figure 6 It is the microscopic morphology picture in comparative example 1;

[0035] Figure 7 It is the microscopic morphology picture in comparative example 2;

[0036] Figure 8 It is the microscopic morphology picture in comparative example 3;

[0037] Fig. 9 It is the microscopic morphology picture in comparative example 4;

[0038] Fig.10 It is the microscopic morphology picture in comparative example 5;

[0039] Fig.11 It is the microscopic morphology picture in comparative example 6;

[0040] Fig.12 It is the microscopic morphology picture in comparative example 7;

[0041] Fig.13 It is the microscopic morphology picture in comparative example 8;

[0042] Fig.14 It is the microscopic morphology picture in comparative example 9;

[0043] Fig.15 This is the microscopic morphology of Comparative Example 10. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical scheme and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention, that is, the embodiments described are only part of the embodiments of the present invention, rather than all of the embodiments.

[0045] Therefore, the following detailed description of the embodiments of the present invention is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present invention.

[0046] It should be noted that relational terms such as "first" and "second" are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0047] The features and performance of the present invention are further described in detail below in conjunction with the embodiments.

[0048] Example 1

[0049] A Cu-MTD etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 5% hydrogen peroxide, 0.01% phenylurea, 1% L-lactic acid, 0.1% malonic acid, 1% triisopropanolamine, 0.01% benzotriazole, 0.01% 5-aminotetrazole, and the remainder is ultrapure water.

[0050] The preparation method of the Cu-MTD etching solution for liquid crystal panels comprises the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing.

[0051] Example 2

[0052] A Cu-MTD etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 15% hydrogen peroxide, 1% phenyl urea, 1% malonic acid, 1% malic acid, 10% L-lactic acid, 10% triisopropanolamine, 1% benzotriazole, 1% 5-aminotetrazole, and the remainder is ultrapure water.

[0053] The preparation method of the Cu-MTD etching solution for liquid crystal panels comprises the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing.

[0054] Example 3

[0055] A Cu-MTD etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 9% hydrogen peroxide, 0.05% phenylurea, 0.4% malonic acid, 0.2% malic acid, 3% L-lactic acid, 0.5% N-methylformamide, 3.5% triisopropanolamine, 0.1% benzothiazole, 0.01% 5-aminotetrazole, and the remainder is ultrapure water.

[0056] The preparation method of the Cu-MTD etching solution for liquid crystal panels comprises the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing.

[0057] Example 4

[0058] A Cu-MTD etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 10% hydrogen peroxide, 0.8% phenylurea, 0.2% malonic acid, 0.5% malic acid, 4% L-lactic acid, 4% triisopropanolamine, 0.5% benzotriazole, 0.8% 5-aminotetrazole, and the remainder is ultrapure water.

[0059] The preparation method of the Cu-MTD etching solution for the liquid crystal panel includes the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing to obtain the solution.

[0060] Example 5

[0061] A Cu-MTD etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 12.5% ​​of hydrogen peroxide, 0.08% of phenyl urea, 0.8% of malonic acid, 0.1% of malic acid, 7% of L-lactic acid, 7.25% of triisopropanolamine, 0.04% of benzotriazole, 0.05% of 5-aminotetrazole, and the remainder is ultrapure water.

[0062] The preparation method of the Cu-MTD etching solution for liquid crystal panels comprises the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing.

[0063] Comparative Example 1

[0064] A Cu-MTD etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 12.5% ​​of hydrogen peroxide, 0.08% of phenyl urea, 0.8% of malonic acid, 0.1% of malic acid, 7% of L-lactic acid, 7.25% of triisopropanolamine, 0.09% of benzotriazole, and the remainder is ultrapure water.

[0065] The preparation method of the Cu-MTD etching solution for liquid crystal panels comprises the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing.

[0066] Comparative Example 2

[0067] A Cu-MTD etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 12.5% ​​of hydrogen peroxide, 0.08% of phenyl urea, 0.8% of malonic acid, 0.1% of malic acid, 7% of L-lactic acid, 7.25% of triisopropanolamine, 0.09% of 5-aminotetrazole, and the remainder is ultrapure water.

[0068] The preparation method of the Cu-MTD etching solution for liquid crystal panels comprises the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing.

[0069] Comparative Example 3

[0070] A Cu-MTD etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 12.5% ​​of hydrogen peroxide, 0.08% of phenyl urea, 0.8% of malonic acid, 0.1% of malic acid, 7% of L-lactic acid, 7.25% of triisopropanolamine, 0.09% of 5-aminotetrazole, 0.5% of benzothiazole, and the remainder is ultrapure water.

[0071] The preparation method of the Cu-MTD etching solution for liquid crystal panels comprises the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing.

[0072] Comparative Example 4

[0073] A Cu-MTD etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 12.5% ​​of hydrogen peroxide, 0.08% of phenyl urea, 0.8% of malonic acid, 0.1% of malic acid, 7% of L-lactic acid, 7.25% of triisopropanolamine, 0.09% of benzotriazole, 0.5% of benzothiazole, and the remainder is ultrapure water.

[0074] The preparation method of the Cu-MTD etching solution for liquid crystal panels comprises the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing.

[0075] Comparative Example 5

[0076] A Cu-MTD etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 12.5% ​​of hydrogen peroxide, 0.08% of phenyl urea, 0.8% of malonic acid, 0.1% of malic acid, 7% of L-lactic acid, 7.25% of triisopropanolamine, 1% of benzotriazole, 1.5% of 5-aminotetrazole, and the remainder is ultrapure water.

[0077] The preparation method of the Cu-MTD etching solution for liquid crystal panels comprises the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing.

[0078] Comparative Example 6

[0079] A Cu-MTD etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 12.5% ​​of hydrogen peroxide, 0.08% of phenyl urea, 0.8% of malonic acid, 0.1% of malic acid, 7% of L-lactic acid, 7.25% of triisopropanolamine, 0.007% of benzotriazole, 0.001% of 5-aminotetrazole, and the remainder is ultrapure water.

[0080] The preparation method of the Cu-MTD etching solution for liquid crystal panels comprises the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing.

[0081] Comparative Example 7

[0082] A Cu-MoNb etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 12.5% ​​of hydrogen peroxide, 0.08% of phenyl urea, 0.8% of malonic acid, 0.1% of malic acid, 7% of L-lactic acid, 7.25% of triisopropanolamine, 0.04% of benzotriazole, 0.05% of 5-aminotetrazole, and the remainder is ultrapure water.

[0083] The preparation method of the above-mentioned Cu-MoNb etching solution for liquid crystal panels includes the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing.

[0084] Comparative Example 8

[0085] A Cu-Mo etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 12.5% ​​of hydrogen peroxide, 0.08% of phenyl urea, 0.8% of malonic acid, 0.1% of malic acid, 7% of L-lactic acid, 7.25% of triisopropanolamine, 0.04% of benzotriazole, 0.05% of 5-aminotetrazole, and the remainder is ultrapure water.

[0086] The preparation method of the above-mentioned Cu-Mo etching solution for liquid crystal panel includes the following steps: adding corrosion inhibitor, stabilizer and organic base to cold water, stirring and mixing, then adding organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing to obtain the solution.

[0087] Comparative Example 9

[0088] A Cu-Nb etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 12.5% ​​of hydrogen peroxide, 0.08% of phenyl urea, 0.8% of malonic acid, 0.1% of malic acid, 7% of L-lactic acid, 7.25% of triisopropanolamine, 0.04% of benzotriazole, 0.05% of 5-aminotetrazole, and the remainder is ultrapure water.

[0089] The preparation method of the above-mentioned Cu-Nb etching solution for liquid crystal panels includes the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing.

[0090] Comparative Example 10

[0091] A Cu-MTD etching solution for a liquid crystal panel is prepared. 1000 ml of the etching solution comprises the following components in proportion by weight: 12.5% ​​of hydrogen peroxide, 0.08% of phenyl urea, 1% of malonic acid, 1% of malic acid, 6% of L-lactic acid, 7.25% of triisopropanolamine, 0.04% of benzotriazole, 0.05% of 5-aminotetrazole, and the remainder is ultrapure water.

[0092] The preparation method of the Cu-MTD etching solution for liquid crystal panels comprises the following steps: adding a corrosion inhibitor, a stabilizer and an organic base to cold water, stirring and mixing, then adding an organic acid thereto, stirring and mixing, and finally adding hydrogen peroxide thereto, stirring and mixing.

[0093] Comparative Example 11

[0094] On the basis of Comparative Example 1, only triisopropanolamine was not added, and other ingredients and preparation methods were the same.

[0095] Test example

[0096] Different liquid crystal panels were etched using the etching solutions in Examples 1-5 and Comparative Examples 1-10, respectively. Specific etching results are shown in Tables 1-3 and the accompanying drawings.

[0097] Table 1

[0098]

[0099]

[0100] Table 2:

[0101]

[0102] Table 3

[0103]

[0104] Among them, the CD Loss data in the above data is 0.75-0.85μm; Taper / ° is 30-40°; no metal residue and no missing corners, chamfers, or holes in the morphology are all at a good level. It can be seen from the results in the above table that the etchant prepared in this application has a good etching effect and a long service life.

[0105] The maximum copper dissolution amount of the embodiments in this scheme can reach 10000ppm, but the maximum copper dissolution amount of the comparative example is only 8500ppm;

[0106] In Comparative Example 11, without adding the organic base triisopropanolamine, the copper dissolution amount can only reach 5500 ppm.

[0107] Attached Figure 1 -Attached Figure 5 In the process, at the highest copper dissolution amount, the technical indicators are all qualified, with no metal residue, no missing corners, chamfers or drillings;

[0108] Reference Comparative Example 1 data and attached Figure 6 , CD Loss is small, and there is a slight undercut (missing corner);

[0109] In the comparative example 2, the CD Loss is relatively small and there is a serious undercut;

[0110] In Comparative Example 3, CD Loss and Taper are relatively small, and there is serious metal residue;

[0111] In Comparative Example 4, the CD Loss is too small, and there is serious residue and rough morphology;

[0112] In Comparative Example 5, the CD Loss is relatively small and has serious residues;

[0113] In Comparative Example 6, CD Loss and Taper are too large, and the etching rate is too fast;

[0114] In Comparative Example 7, CD Loss and Taper are relatively small;

[0115] In Comparative Example 8, CD Loss and Taper are too large, the etching rate is too fast, and there is undercut;

[0116] In Comparative Example 9, CD Loss and Taper are too large, the etching rate is too fast, and there is undercut;

[0117] In Comparative Example 10, the CD Loss is relatively large and metal remains.

Claims

1. A Cu-MTD etching solution for a liquid crystal panel, characterized in that: The composition comprises the following components in weight proportion: 5-18% hydrogen peroxide, 0.01-1% stabilizer, 1-12% organic acid, 1-10% organic base, 0.01-2% corrosion inhibitor, and the rest is ultrapure water; The stabilizer is phenylurea; The organic acid is a mixture of malonic acid, malic acid and L-lactic acid; The mass fraction of L-lactic acid in the organic acid mixture is ≥80%; The corrosion inhibitor is a mixture of benzotriazole and 5-aminotetrazolyl.

2. The Cu-MTD etching solution for liquid crystal panel according to claim 1, characterized in that: The organic base is at least one of N-methylformamide, triisopropanolamine and isobutanolamine.

3. The method for preparing the Cu-MTD etching solution for liquid crystal panels according to any one of claims 1 to 2, characterized in that: The following steps are involved: The corrosion inhibitor, stabilizer and organic base are added to ultrapure water, stirred and mixed, then organic acid is added thereto, stirred and mixed, and finally hydrogen peroxide is added thereto, stirred and mixed to obtain the product.

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