A packaging substrate and a method for manufacturing an electroplated copper column thereof

Abstract

The present invention discloses a method for manufacturing a package substrate and an electroplated copper column thereof, comprising the following steps: providing a copper-clad substrate; depositing a first chemical copper layer and a first electroplated copper layer on the surface of the copper-clad substrate; performing lamination, exposure, development, etching and film stripping based on the copper-clad substrate to obtain a first graphic layer; laminating a solder mask layer on the surface of the first graphic layer; opening the solder mask layer by laser drilling equipment, and depositing a second chemical copper layer on the solder mask layer; obtaining a second graphic layer by using an MSAP process; laminating a solder mask dry film layer on the solder mask layer, and forming an opening on the solder mask dry film layer by a lithography process; forming a third chemical copper layer and a third electroplated copper layer on the solder mask dry film layer; and stripping and etching to obtain an electroplated copper column. The present invention forms a copper column above the solder mask layer to replace the original solder ball, and the electroplated copper column is turned on, having better electrical properties and reliability; the roughening of the solder mask dry film layer makes the solder mask and the electroplated copper bite more tightly, thereby increasing the bonding force between the solder mask and the copper column.

Description

Technical Field

[0001] The invention relates to the technical field of printed circuit board processing, and in particular to a packaging substrate and a method for manufacturing an electroplated copper column thereof. Background Art

[0002] The description in this section merely provides background information related to the present disclosure and does not constitute prior art.

[0003] In the prior art, tin-silver-copper alloy and tin-silver alloy are commonly used in the existing substrate production technology as the conductive material with the chip, and the tin-containing material is used, and the signal layer and the tin are isolated by a solder mask layer; in addition, if the solder mask layer does not roughen the surface, there is a high probability of product reliability risk, because the copper layer and the solder mask have insufficient bonding strength, and are exposed to high temperatures during packaging, there is a high probability of DELAM (delamination) and VOID (void) phenomena.

[0004] Therefore, it is necessary to provide a method for manufacturing electroplated copper columns of a packaging substrate to solve the above technical problems.

[0005] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present invention and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology section of the present invention. Summary of the invention

[0006] The technical problem to be solved by the present invention is that, in view of the shortcomings of the prior art, a method for manufacturing a packaging substrate and an electroplated copper column thereof is provided, in which a copper column is formed above a solder mask layer using an MSAP process (copper plating → lamination, exposure, development, electroplating) to replace the original solder ball processing process, and electroplated copper columns are used to achieve conduction, and the copper columns have better electrical properties and reliability.

[0007] The present application discloses a method for manufacturing a package substrate electroplated copper column, comprising the following steps:

[0008] Providing a copper-clad substrate;

[0009] Using a drilling machine to make grooves on the copper-clad substrate to obtain openings;

[0010] Depositing a first chemical copper layer on the surface of the copper-clad substrate, and depositing a first electroplated copper layer based on the first chemical copper layer;

[0011] plugging the opening with a filler;

[0012] Based on the copper-clad substrate after filling, lamination, exposure, development, etching and film removal are performed to obtain a first graphic layer;

[0013] Laminating a solder resist layer on the surface of the first graphic layer;

[0014] Using a laser drilling device to open the solder resist layer, wherein the opening of the solder resist layer is staggered with the opening, and depositing a second chemical copper layer on the solder resist layer and the first electroplating layer;

[0015] Expose and develop the second pattern layer by using the MSAP process, and deposit the second electroplated copper layer on the second chemical copper layer as a substrate, open the solidified dry film by using a stripping solution, and etch away the second chemical copper layer not covered by the second electroplated copper layer;

[0016] Laminating a solder mask dry film layer on the solder mask layer, and forming an opening on the solder mask dry film layer corresponding to a position of the second electroplated copper layer through a lithography process;

[0017] Forming a third chemical copper layer on the solder resist dry film layer, and forming a T-PAD pattern to be plated on the solder resist dry film layer through a lithography process, and forming a photosensitive dry film layer on the third chemical copper layer, and forming an opening in the photosensitive dry film layer corresponding to the position of the second electroplated copper layer, and depositing a third electroplated copper layer at the opening of the photosensitive dry film layer and with the third chemical copper layer as a substrate, and performing an acid pickling treatment before depositing the third electroplated copper layer;

[0018] The cured photosensitive dry film layer is opened by using a film stripping solution, and the third chemical copper layer not covered by the third electroplated copper layer is etched away to obtain an electroplated copper column.

[0019] Furthermore, in the manufacturing method of the electroplated copper column of the above-mentioned packaging substrate, in the step of "forming a third chemical copper layer on the solder mask dry film layer, and forming a T-PAD to-be-plated pattern on the solder mask dry film layer through a lithography process, and forming a photosensitive dry film layer on the third chemical copper layer, and the photosensitive dry film layer forms an opening corresponding to the position of the second electroplated copper layer, and depositing a third electroplated copper layer at the opening of the photosensitive dry film layer and using the third chemical copper layer as a substrate, and performing a pickling treatment before depositing the third electroplated copper layer", the solder mask dry film layer is roughened using Japanese UYEMURA solution, and palladium is deposited on the solder mask dry film layer through ATO solution, and the deposition of chemical copper is attracted by the action of H2 around the palladium metal, and finally a third chemical copper layer is formed on the solder mask dry film layer.

[0020] Furthermore, in the above-mentioned method for manufacturing the electroplated copper pillars of the packaging substrate, in the step of "using Japanese UYEMURA solution to roughen the solder mask dry film layer", the solution roughening treatment time is 10min±1min, the temperature is 60°±5°, and the solution pH value is 13±1.

[0021] Furthermore, in the above-mentioned method for manufacturing electroplated copper pillars on a packaging substrate, the thickness of the third chemical copper layer is 0.3um to 0.8um.

[0022] Furthermore, in the manufacturing method of the electroplated copper pillar of the packaging substrate mentioned above, the step of "forming a third chemical copper layer on the solder mask dry film layer, and forming a T-PAD to-be-plated pattern on the solder mask dry film layer through a lithography process, and forming a photosensitive dry film layer on the third chemical copper layer, and the photosensitive dry film layer forms an opening corresponding to the position of the second electroplated copper layer, and depositing a third electroplated copper layer at the opening of the photosensitive dry film layer and with the third chemical copper layer as the substrate, and performing an acid pickling treatment before depositing the third electroplated copper layer" is used. With the third chemical copper layer as the substrate, under the action of an external current, the copper ions in the plating tank liquid are reduced to copper atoms and deposited on the surface of the third chemical copper layer to form a third electroplated copper layer.

[0023] Furthermore, in the above-mentioned method for manufacturing electroplated copper pillars on a packaging substrate, the carrier in the pickling treatment is polyethylene glycol, the concentration of the carrier is 40±10 ml / L, and the concentration of sulfuric acid is 3±1%.

[0024] Furthermore, in the above-mentioned method for manufacturing the electroplated copper column of the packaging substrate, the electroplating time is 30min to 50min, the current density of the applied current is 5ASF to 10ASF, the copper sulfate concentration in the electroplating bath is 140g / L to 150g / L, the sulfuric acid concentration is 160g / L to 180g / L, the chloride ion concentration is 10ppm to 30ppm, the brightener concentration is 0.6g / L to 0.8g / L, and the leveler concentration is 10g / L to 20g / L.

[0025] In summary, the method adopted in the embodiment of the present invention has the following advantages:

[0026] 1. The packaging substrate and the manufacturing method of the electroplated copper pillars of the present invention use the MSAP process (copper plating → lamination, exposure, development, electroplating) to form copper pillars on the solder mask layer, replacing the original solder ball processing process, and using electroplated copper pillars to achieve conduction. The size of the copper pillars can be different according to the heat dissipation, conductivity, signal transmission and other requirements of customers. Compared with the tin-silver-copper alloy and tin-silver alloy commonly used in the existing substrate production technology as the conductive material with the chip, the copper pillars have better electrical properties and reliability;

[0027] 2. The packaging substrate and the manufacturing method of the electroplated copper pillar thereof of the present invention add a process of roughening the solder mask layer in the copper plating process, and use Japanese UYEMURA solution to roughen the solder mask dry film layer, so that the solder mask and the copper plating are more closely engaged, and the bonding strength between the solder mask and the copper pillar is further increased;

[0028] 3. The packaging substrate and the method for manufacturing the electroplated copper pillars thereof described in the present invention ensure that the thickness and quality of the copper pillars are within the specifications by limiting the current density and the electroplating solution formula, thereby avoiding uniformity problems caused by poor matching of the current density and the electroplating solution formula, electroplated copper deposition rate problems or other problems that may cause quality risks of the substrate.

[0029] To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and description and are not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the embodiments of this specification or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this specification. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0031] Figures 1 to 4 is a schematic diagram of a packaging substrate during a method for manufacturing electroplated copper pillars of a packaging substrate in an embodiment of the present invention;

[0032] Figure 5 is a schematic diagram comparing the electromigration reliability of copper pillars and tin-silver bumps in an embodiment of the present invention;

[0033] Figure 6 The data are experimental data comparing the effects of UYEMURA solution and other solutions in the embodiments of the present invention.

[0034] The figure marks of the above drawings are: 1, copper-clad substrate; 11, opening; 2, first chemical copper layer; 3, first electroplated copper layer; 4, first graphic layer; 5, solder mask layer; 51, conductive blind hole; 6, second chemical copper layer; 7, second graphic layer; 8, second electroplated copper layer; 9, solder mask dry film layer; 12, photosensitive dry film layer; 14, electroplated copper column. DETAILED DESCRIPTION

[0035] In order to enable those skilled in the art to better understand the technical solutions in this specification, the technical solutions in the embodiments of this specification will be clearly and completely described below in conjunction with the drawings in the embodiments of this specification. Obviously, the described embodiments are only part of the embodiments of this specification, not all of the embodiments. Based on the embodiments in this specification, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of this specification.

[0036] The following is an explanation of the embodiments of the present invention through specific embodiments. Those skilled in the art can understand the advantages and effects of the present invention from the contents disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only simple schematic illustrations and are not depicted according to actual sizes. It is stated in advance. The following embodiments will further explain the relevant technical contents of the present invention in detail, but the disclosed contents are not intended to limit the scope of protection of the present invention.

[0037] It should be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various components or signals, these components or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another component, or one signal from another signal. In addition, the term "or" used herein may include any one or more combinations of the associated listed items depending on the actual situation.

[0038] Reference Figures 1 to 4 As shown, the embodiment of the present application discloses a method for manufacturing an electroplated copper column of a packaging substrate, comprising the following steps:

[0039] S1, providing a copper-clad substrate 1;

[0040] S2, using a drilling machine to make a groove on the copper-clad substrate 1 to obtain an opening 11;

[0041] S3, depositing a first chemical copper layer 2 on the surface of the copper-clad substrate 1, and depositing a first electroplated copper layer 3 on the first chemical copper layer 2 as a base;

[0042] S4, plugging the opening 11 with a filler; in this embodiment, a resin is used for plugging the opening;

[0043] S5, based on the copper-clad substrate 1 after filling, lamination, exposure, development, etching and film removal are performed to obtain a first graphic layer 4;

[0044] S6, pressing the solder resist layer 5 on the surface of the first graphic layer 4;

[0045] S7, using a laser drilling device to open the solder resist layer 5, wherein the opening of the solder resist layer 5 is staggered with the opening 11, and depositing a second chemical copper layer 6 on the solder resist layer 5 and the first electroplating layer;

[0046] S8, exposing and developing by MSAP process to obtain a second pattern layer 7, and depositing a second electroplated copper layer 8 on the second chemical copper layer 6 as a substrate, opening the solidified dry film by a stripping solution, and etching away the second chemical copper layer 6 not covered by the second electroplated copper layer 8;

[0047] S9, laminating a solder mask dry film layer 9 on the solder mask layer 5, and forming an opening on the solder mask dry film layer 9 at a position corresponding to the second electroplated copper layer 8 through a lithography process;

[0048] S10, forming a third chemical copper layer on the solder resist dry film layer 9, and forming a T-PAD to-be-plated pattern on the solder resist dry film layer 9 through a lithography process, and forming a photosensitive dry film layer 12 on the third chemical copper layer, and the photosensitive dry film layer 12 forms an opening corresponding to the position of the second electroplated copper layer 8, and depositing a third electroplated copper layer at the opening of the photosensitive dry film layer 12 with the third chemical copper layer as a substrate, and performing a pickling treatment before depositing the third electroplated copper layer; wherein the lithography process is to form a strip electroplated pattern through lamination, exposure, and development;

[0049] S11, using a film stripping solution to open the solidified photosensitive dry film layer 12, and etching away the third chemical copper layer not covered by the third electroplated copper layer, to obtain an electroplated copper column 14, wherein the electroplated copper column 14 is a T-shaped structure.

[0050] In this embodiment, the T-PAD is a T-shaped electroplated copper column.

[0051] In this embodiment, the solder resist layer 5 generally uses Japanese Taiyo ink, and can also be replaced by a dielectric layer ABF (GX, GZ, GL series) material. The solder resist layer 5 refers to the portion of the printed circuit board coated with green oil. Its function is to open a window on the entire piece of green oil to allow welding and prevent the parts that should not be welded from being connected by solder. The material of the solder resist dry film layer 9 is mainly composed of resin, filler (powder filler), and solvent, which plays the function of protecting the circuit, avoiding oxidation, and providing insulation.

[0052] Specifically, in the present embodiment, in the step of "forming a third chemical copper layer on the solder resist dry film layer 9, and forming a T-PAD to-be-plated pattern on the solder resist dry film layer 9 through a lithography process, and forming a photosensitive dry film layer 12 on the third chemical copper layer, and the photosensitive dry film layer 12 forms an opening corresponding to the position of the second electroplated copper layer 8, and depositing a third electroplated copper layer at the opening of the photosensitive dry film layer 12 with the third chemical copper layer as a base", the solder resist dry film layer 9 is roughened using Japanese UYEMURA solution, and palladium is deposited on the solder resist dry film layer 9 through ATO solution, and the deposition of chemical copper is attracted by the action of H2 around the palladium metal, and finally a third chemical copper layer is formed on the solder resist dry film layer 9. The existing copper pillar manufacturing process for carrier boards does not add the process of roughening solder mask in the chemical copper manufacturing process. The purpose of roughening in this application is to improve the bonding strength between chemical copper and solder mask. Compared with the copper pillar manufacturing process without solder mask roughening, the solder mask dry film layer 9 of this technology has better bonding strength with the copper layer, further increasing the bonding strength between the solder mask and the copper pillar. The solder mask dry film layer 9 in this embodiment is an insulating layer. If the solder mask layer is not roughened, the tension between the solder mask layer and the copper layer will approach 0; while the solder mask surface is roughened and combined with the production parameters of this solution, the tension between the solder mask layer and the copper layer can be > 0.03kN / m.

[0053] Specifically, in the step of "using Japanese UYEMURA solution to roughen the solder mask dry film layer 9", the roughening treatment time is 10min±1min, the temperature is 60°±5°, and the pH value of the solution is 13±1. In the present embodiment, the model of Japanese UYEMURA solution is MRF. The experimental data comparing the effects of this solution with other solutions is referenced. Figure 6 shown.

[0054] Specifically, in this embodiment, the thickness of the third chemical copper layer is 0.3 um to 0.8 um.

[0055] Specifically, in the present embodiment, in the step of "forming a third chemical copper layer on the solder mask dry film layer 9, and forming a T-PAD pattern to be plated on the solder mask dry film layer 9 through a lithography process, and forming a photosensitive dry film layer 12 on the third chemical copper layer, and an opening is formed in the photosensitive dry film layer 12 corresponding to the position of the second electroplated copper layer 8, and a third electroplated copper layer is deposited at the opening of the photosensitive dry film layer 12 with the third chemical copper layer as a substrate", the third chemical copper layer is used as a substrate, and under the action of an external current, the copper ions in the electroplating tank liquid are reduced to copper atoms and deposited on the surface of the third chemical copper layer to form a third electroplated copper layer.

[0056] Specifically, in this embodiment, the carrier in the pickling treatment tank is polyethylene glycol, the concentration of the carrier is 40±10 ml / L, and the concentration of sulfuric acid is 3±1%.

[0057] Specifically, in this embodiment, the electroplating time is 30min to 50min, the current density of the impressed current is 5ASF to 10ASF, the copper sulfate concentration in the electroplating bath is 140g / L to 150g / L, the sulfuric acid concentration is 160g / L to 180g / L, the chloride ion concentration is 10ppm to 30ppm, the brightener concentration is 0.6g / L to 0.8g / L, and the leveler concentration is 10g / L to 20g / L. The parameters of sulfuric acid, copper sulfate, additives and current density are limited to avoid the problems of excessive copper thickness and poor quality of copper columns. The pickling tank before copper electroplating has an additional carrier (polyethylene glycol), whose main function is to reduce the surface tension of the bath solution so that the substrate is wetted in advance. Its role is to allow the solution to react before electroplating to increase the hole filling quality and hole filling efficiency of electroplating. Usually, the residual copper area of ​​the outer circuit design is very small (the copper exposed area is very small), that is, the area that must be electroplated is very small. With the existing electroplating line design (cathode, anode) and electroplating solution formula, the residual copper rate of the substrate is usually more than 70% (substrate area: 510x510mm). During production, a small current density and a specific solution formula must be used to ensure that the copper column is within the set specification range; if the general blind hole electroplating solution formula is used with the general current density parameters, the concentration of the solution (copper sulfate or sulfuric acid) will be too high / too low, affecting the overall electroplating deposition efficiency and uniformity; in detail, copper sulfate is the main salt that provides copper ions in the electroplating solution, and the concentration of copper sulfate must be controlled. If the concentration of copper sulfate is too low, the current density will decrease, reducing the efficiency of electroplating and affecting the brightness of electroplating; if the concentration of copper sulfate is too high, the copper sulfate solution in the electroplating stock solution will crystallize and precipitate, and at the same time, it will affect the dispersion ability of metal ions in the electroplating stock solution. Sulfuric acid in the electroplating solution is a strong electrolyte. It is mainly used to improve the conductivity of the electroplating solution and increase the dispersion of copper ions, thereby greatly reducing the polarization rate of the anode and cathode. Too high a concentration will also affect the flatness and brightness of the coating. Therefore, the concentration of sulfuric acid and copper sulfate has a strong correlation with the quality of electroplating. The most common problem in the copper column process is that the copper thickness is too thick, resulting in the dry film being sandwiched in the groove of the copper column. The dry film in the groove is not easy to react with the solution, which leads to the defect of unclean film removal. The copper residue at the bottom of the dry film eventually causes a short circuit. The quality of electroplated copper is affected by the concentration of copper ions, sulfuric acid, additives (including brighteners and levelers), current density, tank solution stirring state, etc. Slight differences in the formula will affect the copper lattice and even the circuit transmission signal.

[0058] By the above method in this embodiment, a copper pillar is formed on the solder mask layer by using the MSAP process (copper plating → lamination, exposure, development, electroplating), replacing the original solder ball processing process, and using electroplated copper pillars 14 to achieve conduction. The size of the copper pillar can have different requirements according to the heat dissipation, conductivity, signal transmission, etc. required by the customer. Compared with the tin-silver-copper alloy and tin-silver alloy commonly used in the existing carrier production technology as the conductive material with the chip, the copper pillar has better electrical properties and reliability. Figure 5 , the figure shows that under the same current / temperature conditions and similar bump structures, the life of the copper pillar is longer than that of the tin-silver bump. Even after 800 hours of testing under the same conditions, no failure of the copper pillar was observed. In the process of copper pillar production in this embodiment, Japanese UYEMURA solution is added to the outer solder mask process to corrode the epoxy resin of the solder mask, so that the Filler (silicon dioxide) falls off, forming an uneven rough surface on the solder mask surface, so that the subsequent chemical copper can be deposited in the vacant position formed by the falling Filler, so that the solder mask and the chemical copper bite more closely, further increasing the solder mask and the copper pillar (Copperpi llar), the electroplating process in the copper pillar production process also uses limited current density and electroplating solution formula to ensure that the copper pillar thickness and copper pillar quality are within the specifications, thereby avoiding uniformity problems caused by poor matching of current density and electroplating solution formula, electroplated copper deposition rate problems or other problems that may cause carrier quality risks; in the prior art, if copper pillars are made on carrier boards, the residual copper area is small, and the electroplated copper pillars will have uniformity and hole filling problems. The electroplating conditions in this embodiment overcome the uniformity and hole filling problems of the electroplated copper pillars, and the combination with Japanese UYEMURA solution can also increase the bonding ability between the solder mask layer and the copper pillars.

[0059] The material properties of copper in this embodiment are utilized, such as the higher melting point of copper than tin, which can avoid the electrical problems caused by the original tin-silver bump voids, and its current carrying capacity is stronger, the reliability is more stable, and the copper material also meets the requirements of green materials RoHS. The excellent electromigration performance for high current carrying capacity applications and the lead-free bump solder cap on the copper column are a more environmentally friendly solution.

[0060] The contents disclosed above are only preferred feasible embodiments of the present invention, and are not intended to limit the scope of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention's specification and drawings are included in the scope of the present invention.

[0061] The various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referenced to each other. Each embodiment focuses on the differences from other embodiments.

[0062] Although the present application has been described through embodiments, those skilled in the art will appreciate that there are many modifications and changes to the present application without departing from the spirit of the present application. It is intended that the attached embodiments include these modifications and changes without departing from the present application.

Claims

1. A method for manufacturing a package substrate electroplated copper column, characterized in that: The following steps are involved: Providing a copper-clad substrate; Using a drilling machine to make grooves on the copper-clad substrate to obtain openings; Depositing a first chemical copper layer on the surface of the copper-clad substrate, and depositing a first electroplated copper layer based on the first chemical copper layer; plugging the opening with a filler; Based on the copper-clad substrate after filling, lamination, exposure, development, etching and film removal are performed to obtain a first graphic layer; Laminating a solder resist layer on the surface of the first graphic layer; Using a laser drilling device to open the solder resist layer, wherein the opening of the solder resist layer is staggered with the opening, and depositing a second chemical copper layer on the solder resist layer and the first electroplating layer; Expose and develop the second pattern layer by using the MSAP process, and deposit the second electroplated copper layer on the second chemical copper layer as a substrate, open the solidified dry film by using a stripping solution, and etch away the second chemical copper layer not covered by the second electroplated copper layer; Laminating a solder mask dry film layer on the solder mask layer, and forming an opening on the solder mask dry film layer corresponding to a position of the second electroplated copper layer through a lithography process; Forming a third chemical copper layer on the solder resist dry film layer, and forming a T-PAD pattern to be plated on the solder resist dry film layer through a lithography process, and forming a photosensitive dry film layer on the third chemical copper layer, and forming an opening in the photosensitive dry film layer corresponding to the position of the second electroplated copper layer, and depositing a third electroplated copper layer at the opening of the photosensitive dry film layer and with the third chemical copper layer as a substrate, and performing an acid pickling treatment before depositing the third electroplated copper layer; The cured photosensitive dry film layer is opened by using a film stripping solution, and the third chemical copper layer not covered by the third electroplated copper layer is etched away to obtain an electroplated copper column.

2. The method for manufacturing a package substrate electroplated copper column according to claim 1, characterized in that: In the step of "forming a third chemical copper layer on the solder resist dry film layer, and forming a T-PAD to-be-plated pattern on the solder resist dry film layer through a lithography process, and forming a photosensitive dry film layer on the third chemical copper layer, and the photosensitive dry film layer forms an opening corresponding to the position of the second electroplated copper layer, and depositing a third electroplated copper layer at the opening of the photosensitive dry film layer and using the third chemical copper layer as a substrate, and performing a pickling treatment before depositing the third electroplated copper layer", the solder resist dry film layer is roughened using Japanese UYEMURA solution, and palladium is deposited on the solder resist dry film layer through ATO solution, and the deposition of chemical copper is attracted under the action of H2 around the palladium metal, and finally a third chemical copper layer is formed on the solder resist dry film layer.

3. The method for manufacturing a package substrate electroplated copper column according to claim 2, characterized in that: In the step of "using Japanese UYEMURA solution to roughen the solder mask dry film layer", the solution roughening treatment time is 10min±1min, the temperature is 60°±5°, and the solution pH value is 13±1.

4. The method for manufacturing a package substrate electroplated copper column according to claim 2, characterized in that: The thickness of the third chemical copper layer is 0.3um-0.8um.

5. The method for manufacturing the electroplated copper pillar of the packaging substrate according to claim 2, characterized in that: In the step of "forming a third chemical copper layer on the solder resist dry film layer, and forming a T-PAD to-be-plated pattern on the solder resist dry film layer through a lithography process, and forming a photosensitive dry film layer on the third chemical copper layer, and forming an opening in the photosensitive dry film layer corresponding to the position of the second electroplated copper layer, and depositing a third electroplated copper layer at the opening of the photosensitive dry film layer and with the third chemical copper layer as a substrate, and performing a pickling treatment before depositing the third electroplated copper layer", with the third chemical copper layer as a substrate, under the action of an applied current, the copper ions in the electroplating bath are reduced to copper atoms and deposited on the surface of the third chemical copper layer to form a third electroplated copper layer.

6. The method for manufacturing the electroplated copper pillar of the packaging substrate according to claim 5, characterized in that: The carrier in the pickling treatment is polyethylene glycol, the concentration of the carrier is 40±10 ml / L, and the concentration of sulfuric acid is 3±1%.

7. The method for manufacturing the electroplated copper pillar of the packaging substrate according to claim 5, characterized in that: The electroplating time is 30 min to 50 min, the current density of the applied current is 5ASF to 10ASF, the copper sulfate concentration in the electroplating bath is 140 g / L to 150 g / L, the sulfuric acid concentration is 160 g / L to 180 g / L, the chloride ion concentration is 10 ppm to 30 ppm, the brightener concentration is 0.6 g / L to 0.8 g / L, and the leveler concentration is 10 g / L to 20 g / L.

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