Cleaning composition, preparation method thereof and cleaning method of etching residues

Abstract

The invention discloses a cleaning composition, a preparation method thereof and a cleaning method of etching residues. The cleaning composition comprises the following components in percentage by mass: 1%-25% of an alkaline compound, 0.1%-15% of fluoride, 0.1%-25% of a metal corrosion inhibitor, 0.01%-25% of a cleaning aid and 10%-70% of an organic solvent. According to the cleaning composition disclosed by the invention, the alkaline compound, the fluoride, the metal corrosion inhibitor, the cleaning auxiliary agent and the organic solvent with proper contents are matched with one another, so that etching residues can be effectively removed; meanwhile, obvious corrosion to contacted metal and non-metal materials is avoided, the etching rate to aluminum, silver, titanium, silicon dioxide and the like is low, and an operation window is large; the cleaning composition disclosed by the invention can be used for cleaning etching residues, such as cleaning a silicon-based OLED (Organic Light Emitting Diode) after dry etching, and has an excellent cleaning effect.

Description

Technical Field

[0001] The invention relates to the technical field of cleaning liquids, and in particular to a cleaning composition and a preparation method thereof, and a method for cleaning etching residues. Background Art

[0002] Silicon-based OLED, also known as micro-OLED, directly mounts the display manufacturing of each pixel onto a silicon-based chip; this makes the pixels very small, and the number of pixels per inch of the display is significantly increased.

[0003] In the preparation process of silicon-based OLED, after preparing CMOS on the silicon substrate, a metal anode layer is plated. The materials of the metal anode layer include Ti, Al, Ag, Au, etc. After the metal anode layer is plated, photoresist is spin-coated, developed and etched, and cleaned to remove the photoresist and etching residues.

[0004] Etching includes wet etching and dry etching. Wet etching can only be accurate to 2μm line width, and it is easy to cause undercutting and corrosion, so dry etching can be used. However, after dry etching, the photoresist becomes hard, making it difficult to clean. At the same time, the byproducts after dry etching form polymers with the photoresist, making it more difficult to clean after etching; if it is not cleaned, it will have an adverse effect on the subsequent film growth of silicon-based OLEDs, thereby affecting the luminous efficiency of silicon-based OLEDs.

[0005] In view of this, this invention is proposed. Summary of the invention

[0006] The first purpose of the present invention is to provide a cleaning composition that can effectively remove etching residues, such as photoresist, polymers after dry etching, etc.; at the same time, it will not cause obvious corrosion to the contacted substrate, has a low etching rate for aluminum, silver, titanium, silicon dioxide, etc., and has a large operating window.

[0007] The second object of the present invention is to provide a method for preparing a cleaning composition, which has simple steps and is suitable for large-scale production.

[0008] The third object of the present invention is to provide a method for cleaning etching residues, wherein the cleaning composition is used in cleaning a substrate after dry etching, which can not only effectively remove the etching residues but also has a large operating window.

[0009] In order to achieve the above-mentioned purpose of the present invention, the following technical solutions are particularly adopted:

[0010] In a first aspect, the present invention provides a cleaning composition comprising the following components by mass percentage:

[0011] 1% to 25% of alkaline compound, 0.1% to 15% of fluoride, 0.1% to 25% of metal corrosion inhibitor, 0.01% to 25% of cleaning aid and 10% to 70% of organic solvent.

[0012] The cleaning composition of the present invention can effectively remove etching residues, such as photoresist, etched polymers, etc., through the mutual cooperation of appropriate amounts of alkaline compounds, fluorides, metal corrosion inhibitors, cleaning aids and organic solvents; at the same time, it will not significantly corrode the metal and non-metal materials it contacts, and has a low etching rate for metal and non-metal materials such as aluminum, silver, titanium, silicon dioxide, etc., and a large operating window; it has good application prospects in the manufacturing process of silicon-based OLED anode circuits.

[0013] In a second aspect, the present invention provides a method for preparing the cleaning composition as described above, comprising the following steps:

[0014] The components are mixed evenly to obtain the cleaning composition.

[0015] The present invention can obtain the cleaning composition by uniformly mixing the components of the cleaning composition, and the steps are simple and suitable for large-scale production.

[0016] In a third aspect, the present invention provides a method for cleaning etching residues, comprising the following steps:

[0017] The substrate after dry etching is cleaned using the cleaning composition as described above.

[0018] The cleaning composition of the present invention can be used for cleaning residues after dry etching, has good cleaning effect, and can completely remove the residues after dry etching; at the same time, it will not cause obvious corrosion to the contacted substrate, such as silicon-based OLED, has a low etching rate for the contacted substrate, and has a large operating window. DETAILED DESCRIPTION

[0019] The technical scheme of the present invention will be clearly and completely described below in conjunction with specific embodiments, but it will be appreciated by those skilled in the art that the following described embodiments are part of embodiments of the present invention, rather than all embodiments, and are only used to illustrate the present invention, and should not be considered as limiting the scope of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative work, all belong to the scope of protection of the present invention. If specific conditions are not indicated in the embodiments, they are carried out according to normal conditions or conditions recommended by the manufacturer. If the manufacturer is not indicated in the reagents or instruments used, they are all conventional products that can be purchased commercially.

[0020] A cleaning composition and a preparation method thereof and a method for cleaning etching residues according to an embodiment of the present invention are described in detail below.

[0021] In some embodiments of the present invention, a cleaning composition is provided, which comprises the following components in terms of mass percentage:

[0022] 1% to 25% of alkaline compound, 0.1% to 15% of fluoride, 0.1% to 25% of metal corrosion inhibitor, 0.01% to 25% of cleaning aid and 10% to 70% of organic solvent.

[0023] The cleaning composition of the present invention can effectively remove etching residues, such as photoresist, polymers after dry etching, etc., through the mutual cooperation of alkaline compounds, fluorides, metal corrosion inhibitors, cleaning aids and organic solvents, thereby solving the problem that etching residues are difficult to remove; at the same time, it will not obviously corrode the metal and non-metal materials it contacts, and has a low etching rate for metal and non-metal materials such as aluminum, silver, titanium, silicon dioxide, etc., and a large operating window; it has good application prospects in the manufacturing process of silicon-based OLED anode circuits.

[0024] For example, in different embodiments, the mass percentages of the components in the cleaning composition may be as follows:

[0025] The mass percentage of the basic compound can be 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25% or a range consisting of any two thereof;

[0026] The mass percentage of fluoride can be 0.1%, 0.5%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15% or a range consisting of any two thereof;

[0027] The mass percentage of the metal corrosion inhibitor can be 0.1%, 0.5%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25% or a range consisting of any two of them;

[0028] The mass percentage of the cleaning aid can be 0.01%, 0.05%, 0.1%, 0.5%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25% or a range of any two thereof;

[0029] The mass percentage of the organic solvent can be 10%, 12%, 14%, 16%, 18%, 20%, 22%, 24%, 26%, 28%, 30%, 32%, 34%, 36%, 38%, 40%, 42%, 44%, 46%, 48%, 50%, 52%, 54%, 56%, 58%, 60%, 62%, 64%, 66%, 68%, 70% or a range consisting of any two of them.

[0030] In the cleaning liquid composition of the present invention, by adding appropriate amounts of alkaline compounds, fluorides, metal corrosion inhibitors, cleaning aids and organic solvents, the components cooperate with each other to effectively remove residues after etching, and have little corrosion to metals or non-metals, a low etching rate for metals or non-metals such as aluminum, silver, titanium, and silicon dioxide, and a large operating window.

[0031] The lack of any one of the alkaline compound, fluoride, metal corrosion inhibitor, cleaning aid and organic solvent components in the cleaning liquid composition of the present invention will result in the cleaning composition being unable to completely clean the residues after etching, resulting in a poor cleaning effect.

[0032] In the cleaning composition of the present invention, adding a suitable amount of alkaline compounds is beneficial to improving the cleaning effect; if the content of the alkaline compounds in the cleaning composition is too low, the cleaning effect is poor; if the content of the alkaline compounds in the cleaning composition is too high, the metal etching rate is significantly increased.

[0033] In the cleaning composition of the present invention, adding a suitable amount of fluoride is beneficial to improving the cleaning ability; if the fluoride content in the cleaning composition is too low, the cleaning effect becomes poor; if the fluoride content in the cleaning composition is too high, the etching rate of metals and non-metals is significantly increased, and even if a sufficient amount of metal corrosion inhibitor is added, the etching rate is not significantly improved.

[0034] In the cleaning composition of the present invention, adding a suitable amount of metal corrosion inhibitor is helpful to slow down or prevent the occurrence of corrosion; if the content of metal corrosion inhibitor in the cleaning composition is low, the metal corrosion inhibition effect is poor; if the content of metal corrosion inhibitor is high, the cleaning effect will be poor.

[0035] In the cleaning composition of the present invention, adding a suitable amount of cleaning aid can help improve the cleaning effect; if the content of the cleaning aid in the cleaning composition is low, it will lead to poor cleaning effect; if the content of the cleaning aid in the cleaning composition is high, it will cause the metal etching rate to increase.

[0036] In some embodiments of the present invention, the cleaning composition comprises the following components by weight percentage:

[0037] 5% to 20% of alkaline compound, 1% to 10% of fluoride, 1% to 20% of metal corrosion inhibitor, 0.05% to 20% of cleaning aid and 15% to 60% of organic solvent.

[0038] In order to obtain a cleaning composition with better performance, the content of each component in the cleaning composition is optimized, which is beneficial to further improve the cleaning effect of the cleaning composition and reduce the corrosion to the metal and non-metal materials it contacts.

[0039] In some embodiments of the present invention, the cleaning composition further comprises water.

[0040] In some embodiments of the invention, the water comprises deionized water.

[0041] In some specific embodiments of the present invention, the cleaning composition comprises the following components in terms of mass percentage:

[0042] 5% to 20% of alkaline compound, 1% to 10% of fluoride, 1% to 20% of metal corrosion inhibitor, 0.05% to 20% of cleaning aid, 15% to 60% of organic solvent and the balance of water.

[0043] In some embodiments of the present invention, the cleaning aid includes at least one of aminoimidazole, 1-butyl-3-methylimidazole chloride, 1-methyl-3-propylimidazole chloride, 1-acetylimidazole and N-methylbenzimidazole.

[0044] During the dry etching process, the gas easily reacts with the metal to produce solids such as silver fluoride and silver chloride that are insoluble in water or organic solvents; the cleaning composition of the present invention is used to clean the substrate after dry etching, and the cleaning aid in the cleaning composition can be combined with the insoluble product after dry etching to form a salt that is easily soluble in water, which is beneficial to improve the cleaning effect. The lack of cleaning aids in the cleaning composition of the present invention will lead to a reduced cleaning effect and the residue after etching cannot be completely cleaned.

[0045] The use of the above-mentioned cleaning aids in the cleaning composition of the present invention is beneficial to improving the cleaning effect; if the cleaning composition lacks the above-mentioned cleaning aids, the cleaning effect will be reduced and the residues after etching cannot be completely cleaned.

[0046] In some embodiments of the present invention, the alkaline substance includes at least one of 2-hydroxyethylethylenediamine, ethylenediamine, 1,2-cyclohexanediamine, 3-amino-3-methyl-butan-1-ol, choline, 3-amino-1,2-propanediol, N-methyl-2-hydroxyethylamine, hydroxyethylethylenediamine, N,N'-bis(2-hydroxyethyl)ethylenediamine, 1,5-diazabicyclo[4.3.0]non-5-ene and 1,8-diazabicyclo[5.4.0]undec-7-ene.

[0047] The alkaline compound of the present invention can provide an alkaline environment for the cleaning composition, which is beneficial to the cleaning process, the performance of the cleaning composition, and the cleaning effect; at the same time, it itself remains stable under heating conditions, which is beneficial to maintaining the stability of the performance of the cleaning composition. If the cleaning composition of the present invention lacks an alkaline compound, the cleaning effect is reduced.

[0048] In some embodiments of the present invention, the fluoride comprises at least one of ammonium fluoride, ammonium bifluoride, boron trifluoride, hydrogen fluoride, fluoroboric acid, and fluorosilicic acid.

[0049] Fluoride refers to a fluorine-containing compound; in the cleaning composition of the present invention, by adding fluoride, the cross-linked product after etching can be broken into small molecules, which are soluble in organic solvents, so that the cleaning composition exhibits stronger cleaning ability. If the cleaning composition of the present invention lacks fluoride, the cleaning effect will be poor.

[0050] In some embodiments of the present invention, the metal corrosion inhibitor includes at least one of 1,2,4-triazole, benzotriazole, 5-methylbenzotriazole, 3,5-diamino-1,2,4-triazole, 4-amino-1,2,4-triazole, 3-methyl-1,2,4-triazole, 3-mercapto-1,2,4-triazole, catechol, 5-tert-butylcatechol and pyrogallol.

[0051] A metal corrosion inhibitor is a substance that can prevent or slow down metal corrosion. When the corrosion inhibitor exists in an environment (medium) at an appropriate concentration and form, it can prevent or slow down material corrosion. When a metal corrosion inhibitor is added to the cleaning liquid composition system of the present invention, the metal corrosion inhibitor can form a protective film with the metal to isolate the metal from the environmental medium, thereby slowing down or preventing the occurrence of corrosion; and the metal corrosion inhibitor is easily washed away by water, leaving almost no residue on the metal surface. The lack of a metal corrosion inhibitor in the cleaning liquid composition of the present invention will cause the cleaning liquid composition to significantly increase the etching rate of the contacted metal or non-metal, such as aluminum, silver, titanium, etc.

[0052] In some embodiments of the present invention, the organic solvent includes at least one of N-formylmorpholine, N,N-dimethylacetamide, N-methylacetamide, 1-acetylpiperazine and dipropylene glycol.

[0053] The organic solvent used in the cleaning composition of the present invention can efficiently dissolve organic matter in the photoresist.

[0054] In some embodiments of the present invention, a method for preparing the cleaning composition is also provided, comprising the following steps:

[0055] The components are mixed to obtain a cleaning composition.

[0056] The present invention can obtain the cleaning composition by uniformly mixing the components of the cleaning composition, and the steps are simple and suitable for large-scale production.

[0057] In some embodiments of the present invention, a method for cleaning etching residues is also provided, comprising the following steps:

[0058] The cleaning composition is used to clean the substrate after dry etching.

[0059] Dry etching is a technology that uses plasma for etching. When the gas exists in the form of plasma, it has two characteristics: on the one hand, the chemical activity of these gases in the plasma is much stronger than that in normal conditions. According to the different materials to be etched, choosing the right gas can react with the material faster to achieve the purpose of etching removal; on the other hand, the electric field can be used to guide and accelerate the plasma, so that it has a certain amount of energy. When it bombards the surface of the etched object, it will knock out the atoms of the etched material, thereby achieving the purpose of etching by physical energy transfer.

[0060] The cleaning composition of the present invention can be used for cleaning residues after dry etching, has good cleaning effect, and can completely remove the residues after dry etching; meanwhile, it will not cause obvious corrosion to the contacted substrate, has a low etching rate for the contacted substrate, and has a large operating window.

[0061] In some embodiments of the present invention, the present invention does not strictly limit the dry etching in the substrate after dry etching, and can be used in the cleaning process of the substrate after conventional dry etching. It has excellent cleaning effect on the substrate after conventional dry etching, has no obvious corrosion to the substrate, and has a low etching rate for the substrate.

[0062] In some embodiments of the present invention, the substrate comprises a silicon-based OLED.

[0063] Silicon-based OLED, also known as Micro-OLED, is a new display technology that combines semiconductor process technology and OLED technology. It uses a silicon substrate as the base material, is processed into a driving backplane through the CMOS process, and deposits an OLED light-emitting module to form a complete display module with high brightness, high contrast, high PPI, high integration, low response time and low power consumption. In the preparation process of silicon-based OLED, after preparing CMOS on the silicon substrate, a metal anode layer is plated (the metal anode layer includes Al, Ag and Ti, etc.). In some silicon-based OLEDs, the lower layer of the metal anode material structure is silicon dioxide; after plating the metal anode layer, the photoresist is spin-coated, developed and etched, and the photoresist and etching residues are removed by cleaning.

[0064] The cleaning composition of the present invention can be used to clean silicon-based OLED after dry etching, and not only has a good cleaning effect and can completely remove the residues after dry etching; but also will not cause obvious corrosion to the metal anode material and silicon substrate of the silicon-based OLED, and has good application prospects in the manufacturing process of silicon-based OLED anodes.

[0065] In some embodiments of the present invention, the cleaning temperature is 30-70°C; typically but not limitatively, for example, the cleaning temperature can be 30°C, 35°C, 40°C, 45°C, 50°C, 55°C, 60°C, 65°C, 70°C or a range of any two thereof.

[0066] The cleaning composition of the present invention has an excellent cleaning effect at a temperature of 30 to 70° C. and has a low etching rate on the substrate.

[0067] In some embodiments of the present invention, the cleaning time is 5 to 15 minutes; typically but not limiting, for example, the cleaning time can be 5 minutes, 8 minutes, 10 minutes, 12 minutes, 15 minutes or a range of any two thereof.

[0068] The cleaning composition of the present invention has excellent cleaning ability, fast cleaning speed and short required cleaning time.

[0069] The features and performance of the present invention are further described in detail below in conjunction with the embodiments.

[0070] Examples 1 to 24

[0071] The preparation method of the cleaning composition provided in Examples 1 to 24 comprises the following steps:

[0072] The organic solvent, the alkaline compound, the fluoride, the corrosion inhibitor, the cleaning aid and the deionized water are mixed to obtain a cleaning composition.

[0073] The types and contents of the organic solvent, alkaline compound, fluoride, corrosion inhibitor, and cleaning aid in the cleaning compositions of Examples 1 to 24 are shown in Table 1.

[0074] In Table 1, the content is the mass percentage of the organic solvent, alkaline compound, fluoride, corrosion inhibitor or cleaning aid in the cleaning composition.

[0075] Table 1

[0076]

[0077]

[0078]

[0079]

[0080] Comparative Examples 1 to 15

[0081] The preparation methods of the cleaning compositions provided in Comparative Examples 1 to 15 include the following steps:

[0082] The organic solvent, the alkaline compound, the fluoride, the corrosion inhibitor, the cleaning aid and the deionized water are mixed to obtain a cleaning composition.

[0083] The types and contents of the organic solvent, alkaline compound, fluoride, corrosion inhibitor, and cleaning aid in the cleaning compositions of Comparative Examples 1 to 15 are shown in Table 2.

[0084] In Table 2, the contents are the mass percentages of the organic solvent, alkaline compound, fluoride, corrosion inhibitor or cleaning aid in the cleaning composition.

[0085] Table 2

[0086]

[0087]

[0088] Test example

[0089] The etching rates and cleaning effects of the cleaning compositions of Examples 1 to 24 and the cleaning compositions of Comparative Examples 1 to 15 were tested, and the results are shown in Table 3.

[0090] Aluminum Etch Rate Test method: The cleaning composition is placed in a reactor and heated to the experimental temperature, and then an aluminum wafer with a size of 3cm×3cm is placed therein and soaked for 10 minutes, washed with water, and blown dry with nitrogen. Then, the change in resistance value before and after etching is measured by a four-point probe, and the etching rate of aluminum is calculated.

[0091] Silver Etch Rate Test method: The cleaning composition is placed in a reactor and heated to the experimental temperature, and then a silver wafer with a size of 3cm×3cm is placed therein and soaked for 10 minutes, washed with water, and blown dry with nitrogen. Then, the change in resistance value before and after etching is measured by a four-point probe, and the etching rate of silver is obtained by calculation.

[0092] Etching rate of titanium Test method: The cleaning composition is placed in a reactor and heated to the experimental temperature, and then a titanium wafer with a size of 3 cm×cm is placed therein and soaked for 10 minutes, washed with water, and dried with nitrogen. Then, the change in resistance value before and after etching is measured by a four-point probe, and the etching rate of titanium is obtained by calculation.

[0093] Silicon dioxide etch rate Test method: The cleaning composition is placed in a reactor and heated to the experimental temperature, and then a silicon dioxide wafer with a size of 3 cm×cm is placed therein for etching for 10 minutes, washed with water, dried with nitrogen, and then the thickness change before and after etching is measured by an ellipsometer to calculate the etching rate of silicon dioxide.

[0094] The testing method of cleaning effect is as follows: the cleaning composition is placed in a reactor and heated to the experimental temperature, the silicon wafer is coated with a photoresist after physical vapor deposition of a silver film and then dry-etched and cut into square pieces with a size of 2 cm × 2 cm, the square pieces are immersed in the solution and heated for 10 minutes, washed with water, dried with nitrogen, and then the surface residue removal of the cleaned wafer is observed by an optical microscope and a scanning electron microscope.

[0095] Among them, the cleaning effects are: A is complete removal; B is a small amount of residue; C is a large amount of residue; D is a large amount of residue.

[0096] Table 3

[0097]

[0098]

[0099]

[0100]

[0101] It can be seen from Table 3 that the cleaning compositions of Examples 1 to 24 of the present invention can effectively remove the residues after dry etching and can completely clean the etching residues; and the etching rates of the aluminum, silver, titanium and silicon dioxide they contact are relatively low.

[0102] The etching rate of the cleaning composition of Example 1 of the present invention is relatively small, indicating that the cleaning composition of the present invention has a relatively large operating window.

[0103] From the comparison between Example 13 and Comparative Example 1, it can be seen that the lack of metal corrosion inhibitor in the cleaning composition will cause the etching rate of the cleaning composition on aluminum, silver and titanium to increase significantly.

[0104] Comparison of the cleaning effects of Example 6, Comparative Example 2, Comparative Example 3, Comparative Example 4 and Comparative Example 5 shows that the cleaning composition lacks organic solvents, alkaline compounds, cleaning aids or fluorides, and cannot completely clean the post-etching residues, resulting in poor cleaning effects.

[0105] By comparing Example 6 with Comparative Example 6, it can be seen that when other types of metal corrosion inhibitors are selected in the cleaning composition, the corrosion inhibition effect is not good.

[0106] In the cleaning compositions of Comparative Examples 7, 8, 9 and 10, other types of organic solvents, alkaline compounds, cleaning aids and fluorine compounds were respectively selected, but the cleaning effects thereof were not good.

[0107] From the comparison between Example 7, Comparative Example 11 and Comparative Example 12, it can be seen that if the content of the alkaline compound in the cleaning composition is too low, the cleaning effect will be poor; if the content of the alkaline compound in the cleaning composition is too high, the metal etching rate will be significantly increased.

[0108] By comparing Example 13 with Comparative Examples 13, 14 and 15, it can be seen that if the fluoride content in the cleaning composition is too low, the cleaning effect will be poor; if the fluoride content in the cleaning composition is too high, the metal and non-metal etching rate will be significantly increased, and even if a sufficient amount of metal corrosion inhibitor is added, the etching rate will not be significantly improved.

[0109] In summary, the cleaning composition of the present invention can effectively remove the residues after dry etching through the coordination of alkaline compounds, fluorides, metal corrosion inhibitors, cleaning aids and organic solvents with appropriate contents and types, and has little corrosion to the metal or non-metal substrate in contact; it can be used for cleaning the residues after dry etching, has a good cleaning effect, can completely remove the residues after dry etching, and has a low etching rate for aluminum, silver, titanium and silicon dioxide, a large operating window, and has good application prospects in the silicon-based OLED anode manufacturing process.

[0110] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A cleaning composition, characterized in that According to mass percentage, it includes the following components: 1% to 25% of alkaline compound, 0.1% to 15% of fluoride, 0.1% to 25% of metal corrosion inhibitor, 0.01% to 25% of cleaning aid and 10% to 70% of organic solvent.

2. The cleaning composition according to claim 1, characterized in that According to mass percentage, it includes the following components: 5% to 20% of alkaline compound, 1% to 10% of fluoride, 1% to 20% of metal corrosion inhibitor, 0.05% to 20% of cleaning aid and 15% to 60% of organic solvent.

3. The cleaning composition according to claim 1, characterized in that The cleaning aid comprises at least one of aminoimidazole, 1-butyl-3-methylimidazole chloride, 1-methyl-3-propylimidazole chloride, 1-acetylimidazole and N-methylbenzimidazole.

4. The cleaning composition according to claim 3, characterized in that The basic compound includes at least one of 2-hydroxyethylethylenediamine, ethylenediamine, 1,2-cyclohexanediamine, 3-amino-3-methyl-butan-1-ol, choline, 3-amino-1,2-propanediol, N-methyl-2-hydroxyethylamine, hydroxyethylethylenediamine, N,N'-bis(2-hydroxyethyl)ethylenediamine, 1,5-diazabicyclo[4.3.0]non-5-ene and 1,8-diazabicyclo[5.4.0]undec-7-ene.

5. The cleaning composition according to claim 3, characterized in that The fluoride includes at least one of ammonium fluoride, ammonium bifluoride, boron trifluoride, hydrogen fluoride, fluoroboric acid and fluorosilicic acid.

6. The cleaning composition according to claim 3, characterized in that The metal corrosion inhibitor includes at least one of 1,2,4-triazole, benzotriazole, 5-methylbenzotriazole, 3,5-diamino-1,2,4-triazole, 4-amino-1,2,4-triazole, 3-methyl-1,2,4-triazole, 3-mercapto-1,2,4-triazole, catechol, 5-tert-butylcatechol and pyrogallol.

7. The cleaning composition according to claim 3, characterized in that The organic solvent includes at least one of N-formylmorpholine, N,N-dimethylacetamide, N-methylacetamide, 1-acetylpiperazine and dipropylene glycol.

8. The method for preparing the cleaning composition according to any one of claims 1 to 7, characterized in that: The steps include: The components are mixed to obtain the cleaning composition.

9. A method for cleaning etching residues, characterized in that: The steps include: The cleaning composition according to any one of claims 1 to 7 is used to clean a substrate after dry etching.

10. The method for cleaning etching residues according to claim 9, characterized in that: The substrate includes a silicon-based OLED.

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