Light-emitting device, preparation method thereof and display device

Abstract

The invention relates to a light-emitting device, a preparation method thereof and a display device. The light-emitting device comprises a substrate, an electrode, a light-emitting chip, a light-transmitting layer, a driving circuit layer and an isolating layer, according to the light-emitting device, the light-emitting chip is directly packaged in the through hole of the substrate, and the light-emitting chip and the driving circuit are designed on different sides, so that a reflection structure is conveniently laid on an emergent surface, the light utilization rate is improved, and integration of the substrate and the light-emitting component is realized; meanwhile, a surface microstructure is formed on the surface layer of the light-emitting chip and is used for diffusing emergent light and reducing the light mixing distance of a product; the integrated design of the light-emitting component and the reduction of the light mixing distance are combined, so that the thickness of the product can be reduced, and the thin design is further realized.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light-emitting device and a preparation method thereof, and a display device. Background Art

[0002] Mini LED (sub-millimeter light-emitting diode) refers to LEDs with chip sizes between 50 and 200 μm. Micro LED (micro light-emitting diode) is a technology that miniaturizes and matrices LEDs.

[0003] As a new-era display technology with great development prospects, Mini LED and Micro LED have broad application growth potential in the display field. Through large-scale dense distribution, smaller-scale regional dimming can be achieved. Compared with the traditional LED backlight design, it has better brightness uniformity and higher color contrast. In terms of backlight applications, both generally adopt a direct-down design, but due to the actual technical bottleneck, the light-emitting substrate still has the problem of thick thickness. Therefore, it is still not as good as the traditional LED side-entry backlight in achieving ultra-thin display. Summary of the invention

[0004] The present application aims to provide a light emitting device and a method for preparing the same, which can reduce the thickness of the product and thus achieve a thin design.

[0005] In a first aspect, an embodiment of the present application provides a light-emitting device, including a substrate, an electrode, a light-emitting chip, a reflective layer, a light-transmitting layer, a driving circuit layer, and an isolation layer;

[0006] The substrate comprises a first surface and a second surface opposite to each other, and one or more circuit conducting areas penetrating the first surface and the second surface; electrodes are arranged in the circuit conducting areas;

[0007] The light emitting chip is disposed on a circuit conducting area on one side of the first surface and connected to one end of the electrode close to the first surface;

[0008] The light-transmitting layer is disposed on one side of the first surface, covering the first surface, the circuit conducting area and the light-emitting chip;

[0009] The driving circuit layer is arranged on the second surface outside the circuit conduction area and is connected to one end of the electrode close to the second surface; the isolation layer is arranged on one side of the second surface, covering the second surface, the driving circuit layer and the circuit conduction area.

[0010] In some embodiments of the present application, the circuit conduction area is filled with a filler, the filler is provided with a second through hole penetrating the filler, the light-emitting chip is provided on the surface of the filler on one side of the first surface, and the electrode is provided in the second through hole. In some other embodiments of the present application, the surface of the filler close to the first surface is flat with the first surface, and the light-emitting chip provided on the surface of the filler is located on the first surface; or the surface of the filler close to the first surface is lower than the first surface, and the light-emitting chip provided on the surface of the filler is located in the circuit conduction area.

[0011] In some embodiments of the present application, the light emitting device further comprises a reflective layer, which is disposed on the first surface outside the circuit conducting area and is covered by the light-transmitting layer. In another embodiment of the present application, the reflective layer has a first surface microstructure.

[0012] In certain embodiments of the present application, the surface of the light-transmitting layer corresponding to the light-emitting chip and the circuit conduction area has a second surface microstructure; in other embodiments of the present application, the light-transmitting layer corresponding to the light-emitting chip and the circuit conduction area is a boss structure; the boss structure is a protrusion of any shape that is higher than the light-transmitting layer in other areas and can achieve light diffusion.

[0013] In certain embodiments of the present application, the driving circuit layer is connected to the electrodes via wires.

[0014] In certain embodiments of the present application, it also includes:

[0015] A light conversion layer is arranged between the light emitting chip and the light-transmitting layer, and the light conversion layer covers the light emitting chip.

[0016] In some embodiments of the present application, the substrate includes a glass substrate; and / or

[0017] The light emitting chip comprises a light emitting diode; and / or

[0018] The filler comprises an adhesive; and / or

[0019] The electrodes include metal electrodes; and / or

[0020] The reflective layer comprises a white / silver reflective layer; and / or

[0021] The light-transmitting layer comprises a transparent resin colloid layer; and / or

[0022] The material of the isolation layer includes insulating material and / or thermal conductive material.

[0023] In a second aspect, an embodiment of the present application provides a method for preparing a light-emitting device, comprising:

[0024] providing a substrate having a first surface and a second surface opposite to each other;

[0025] One or more first through holes are opened on the substrate to form a circuit conduction area, penetrating the first surface and the second surface, and electrodes are arranged in the circuit conduction area;

[0026] A driving circuit layer is arranged on the second surface outside the circuit conducting area and connected to one end of the electrode close to the second surface; an isolation layer is arranged on one side of the second surface to cover the second surface, the driving circuit layer and the circuit conducting area;

[0027] A light-emitting chip is arranged on the circuit conduction area on one side of the first surface and connected to one end of the electrode close to the first surface; a reflective layer is arranged on the first surface outside the first through hole; and a light-transmitting layer is arranged on one side of the first surface to cover the first surface, the circuit conduction area and the light-emitting chip.

[0028] In certain embodiments of the present application, the preparation method further comprises disposing a reflective layer on the first surface outside the circuit conducting area.

[0029] In certain embodiments of the present application, the preparation method further comprises disposing a light conversion layer between the light emitting chip and the light-transmitting layer, wherein the light conversion layer covers the light emitting chip.

[0030] In a third aspect, an embodiment of the present application proposes a display device, comprising: a display panel and a backlight module; the backlight module comprises any one of the light-emitting devices described in the present application.

[0031] The light-emitting device and preparation method thereof provided in the embodiments of the present application directly encapsulate the light-emitting chip in the through hole of the substrate, and design the light-emitting chip and the driving circuit on different sides, so as to facilitate the laying of the reflective structure on the emission surface, improve the light utilization rate, and realize the integration of the substrate and the light-emitting component; at the same time, a surface microstructure is formed on the surface of the light-emitting chip to diffuse the emitted light and reduce the mixed light distance of the product; the integrated design of the light-emitting component combined with the reduction of the mixed light distance can reduce the thickness of the product, thereby realizing a thin design. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The features, advantages and technical effects of the exemplary embodiments of the present application will be described below with reference to the accompanying drawings. In the accompanying drawings, the same reference numerals are used for the same components. The accompanying drawings are not drawn according to the actual scale, but are only used to illustrate the relative position relationship. The layer thickness of some parts is exaggerated for easy understanding, and the layer thickness in the accompanying drawings does not represent the proportional relationship of the actual layer thickness.

[0033] Figure 1 A schematic cross-sectional structure diagram of a light emitting device provided in a first embodiment of the present application is shown;

[0034] Figure 2 Structural and light schematic diagram showing surface microstructure;

[0035] Figure 3 A schematic cross-sectional structure diagram of a light emitting device provided in a second embodiment of the present application is shown;

[0036] Figure 4-Figure 10 The schematic diagrams of the structures of the light-emitting devices corresponding to different stages in the process of preparing the light-emitting device provided in the first embodiment of the present application are shown in sequence;

[0037] Figure 11-Figure 16 The schematic diagrams of the structure of the light-emitting device corresponding to different stages in the process of preparing the light-emitting device provided in the second embodiment of the present application are shown in sequence;

[0038] Description of reference numerals:

[0039] 1. Substrate; 101. First surface; 102. Second surface; 103. Circuit conduction area; 104. First surface microstructure; 2. Filler; 201. Second through hole; 3. Electrode; 4. Light-emitting chip; 5. Reflective layer; 6. Transparent layer; 601. Second surface microstructure; 7. Driving circuit layer; 8. Isolation layer; 9. Wire; 10. Light conversion layer. DETAILED DESCRIPTION

[0040] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In the detailed description below, many specific details are proposed to provide a comprehensive understanding of the present application. However, it is obvious to those skilled in the art that the present application can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by illustrating examples of the present application. In the accompanying drawings and the following description, at least part of the known structures and technologies are not shown to avoid unnecessary ambiguity in the present application; and, for clarity, the size of the regional structure may be exaggerated. In addition, the features, structures or characteristics described below may be combined in one or more embodiments in any suitable manner.

[0041] Mini LED and Micro LED generally adopt a direct-down design. Since the light is freely mixed through the light source, a certain mixing distance (OD: optical distance, which refers to the distance between the diffuser and the upper surface of the backlight panel) must be maintained to achieve uniform light mixing and present different colors. Generally speaking, the larger the OD, the more complete the LED light beam mixing, the slighter the light particle shadow, and the better the visual effect. However, this will also lead to the biggest shortcoming of the direct-down design, which is that the backlight module is thicker. Currently, the mixing distance of Mini LED and Micro LED is generally 5-10mm. To this end, each embodiment of the present application provides a light-emitting device and a preparation method thereof, which integrates the light-emitting component into an integrated design and can also reduce the mixing distance. Both of these technical means can reduce the thickness of the product, thereby achieving a thin design. The display panel provided in each embodiment is described in detail below in conjunction with the accompanying drawings.

[0042] First embodiment

[0043] like Figure 1 As shown, the display device provided in the first embodiment of the present application includes a substrate 1, a filler 2, an electrode 3, a light-emitting chip 4, a reflective layer 5, a light-transmitting layer 6, a driving circuit layer 7, an isolation layer 8, a wire 9, and a light conversion layer 10;

[0044] The substrate 1 comprises a first surface 101 and a second surface 102 opposite to each other, and one or more circuit conduction areas 103 penetrating the first surface 101 and the second surface 102; the shape, size, and material of the substrate 1 are not limited and can be selected as needed. Specifically, the substrate 1 can be selected as a transparent substrate, such as a glass substrate. The glass substrate has stable physical properties, is convenient for dispensing / potting / coating processes on the substrate, and has good light transmittance. The circuit conduction areas 103 can be arranged in an array according to actual product requirements, or arranged on the substrate 1 in any other form.

[0045] The filler 2 is filled in the circuit conduction area 103, and a second through hole 201 penetrating the filler 2 is provided. The surface of the filler 2 close to the first surface 101 is flush with the first surface 101, so that the light-emitting chip 4 provided on the filler 2 can be located on the first surface 101 of the substrate 1; the number of the second through holes 201 depends on the number of the electrodes 3, and is generally 2; specifically, the filler 2 can be selected as an adhesive with hot-melt properties, such as epoxy resin.

[0046] The electrode 3 is arranged in the second through hole 201 and can be selected as a metal electrode. One end of the electrode 3 is connected to the light-emitting chip 4 for conducting the electrode and transferring heat from the light-emitting chip 4. The other end of the electrode 3 is connected to the driving circuit layer 7 through the wire 9; specifically, the wire 9 can be selected as a gold wire.

[0047] The light emitting chip 4 is disposed on the filler 2 on one side of the first surface 101, and can be fixed by a die-bonding adhesive and connected to one end of the electrode 3 close to the first surface 101; the light emitting chip 4 is a light emitting diode (LED), and specifically, the light emitting chip 4 can be a Mini LED or a Micro LED. The spacing between the light emitting chips 4 is determined according to the first through hole 103 of the substrate 1, and no additional array design is required.

[0048] The light-emitting chip 4 is provided with a light conversion layer 10, which covers the light-emitting chip 4. Specifically, the light conversion layer 10 can convert the light emitted by the light-emitting chip 4 into light of a desired color according to different selected materials and functions. As an example, it can be a phosphor layer, including but not limited to a phosphor layer that can emit white light when excited by blue light, so that the light-emitting chip 4 with blue light can emit white light, and after being used in a display device, the light-emitting device can be given color through a color filter (CF). Other combinations are not described here.

[0049] The reflective layer 5 is disposed on the first surface 101 outside the circuit conducting area 103 to improve light utilization efficiency; specifically, the reflective layer 5 can be a white reflective layer or a silver reflective layer.

[0050] The light-transmitting layer 6 is arranged on one side of the first surface 101, covering the first surface 101, the reflective layer 5, the filler 2 (circuit conduction area), the light conversion layer 10 and the light-emitting chip 4; specifically, the light-transmitting layer 6 can be selected as a transparent resin colloid layer, including but not limited to a resin colloid layer with high transmittance such as PMMA, PC, PET, etc. Among them, the light-transmitting layer 6 corresponding to the light-emitting chip 4 and the filler 2 has a second surface microstructure 601, and the second surface microstructure 601 is conducive to spreading the emitted light of the light-emitting chip 4, diffusing the emission angle of the light-emitting chip 4, and making the light uniformly mixed in the light-transmitting layer 6 before emitting light. In addition, the light can be emitted through the reflective layer 5 to improve the light emission efficiency, reduce the mixing distance, and facilitate the thinning of the product; the surface microstructure can be a continuous and / or discontinuous toothed and / or wavy structure, as shown in the schematic diagram Figure 2 ,exist Figure 2 After the incident light reaches the surface microstructure interface, the reflected light will diffuse in multiple directions and angles, which is conducive to the mixing of light;

[0051] In the embodiment of the present application, the light-transmitting layer 6 corresponding to the light-emitting chip 4 and the filler 2 may be a boss structure, and the boss structure is a protrusion of any shape with a height higher than the light-transmitting layer of the corresponding reflective layer, which can achieve light diffusion. This structure cooperates with the second surface microstructure 601 to make the light more evenly mixed in the protruding boss structure, and enhance the diffusion of the emitted light without significantly increasing the product thickness. The boss structure includes but is not limited to Figure 1The arc-shaped structure or spherical structure shown can achieve light diffusion.

[0052] The driving circuit layer 7 is disposed on the second surface 102 outside the first through hole 103 and connected to one end of the electrode 3 close to the second surface 102 ; the driving circuit layer 7 drives the light emitting chip 4 to emit light through the wire 9 and the electrode 3 .

[0053] The isolation layer 8 is arranged on one side of the second surface 102, covering the second surface 102, the driving circuit layer 7 and the filler 2 (circuit conduction area). Specifically, the material of the isolation layer can be selected from insulating materials and / or thermally conductive materials, which can play the role of insulation and / or thermal conductivity; the insulating material can be selected from resin, and the thermally conductive material can be selected from organic polymer silica gel, thermal conductive silicone grease, graphite and other materials with good thermal conductivity and stable physical properties. The two materials form a composite colloid as the isolation layer 8, which not only plays the role of protecting the circuit layer, but also improves the heat dissipation effect of the circuit layer.

[0054] Second embodiment

[0055] like Figure 3 As shown, the display device provided in the second embodiment of the present application includes a substrate 1, a filler 2, an electrode 3, a light-emitting chip 4, a reflective layer 5, a light-transmitting layer 6, a driving circuit layer 7, an isolation layer 8, a wire 9, and a light conversion layer 10;

[0056] The specific structures of the second embodiment of the present application are basically the same as those of the first embodiment, except that the reflective layer 5 has a first surface microstructure, so that the reflective layer 5 can better reflect light, improve the utilization rate of the light-emitting chip 4, and the first surface microstructure 5 can diffuse the reflected light to the greatest extent, thereby improving the uniformity of the light. The first surface microstructure 5 can be a continuous and / or discontinuous toothed and / or wavy structure, and can be the same, partially the same, or different from the second surface microstructure 601, as shown in the schematic diagram Figure 2 .

[0057] Third embodiment

[0058] The display device provided in the third embodiment of the present application includes a substrate 1, a filler 2, an electrode 3, a light-emitting chip 4, a reflective layer 5, a light-transmitting layer 6, a driving circuit layer 7, an isolation layer 8, a wire 9, and a light conversion layer 10;

[0059] The specific structure of the third embodiment of the present application is basically the same as that of the first embodiment, except that the surface of the filler 2 close to the first surface 101 is made lower than the first surface 101 by controlling the amount of filler 2 filled in the circuit conduction area 103, so that the light-emitting chip 4 arranged on the filler 2 can be located in the circuit conduction area 103, that is, located inside the substrate 1, further reducing the thickness of the product. At this time, the substrate 1 is a transparent substrate, such as a glass substrate, which will not affect the light emission of the light-emitting chip 4; if the light-emitting device is used for a device that can display collimated light, a substrate of a non-transparent material is also applicable. The schematic diagram can be referred to Figure 1 understand.

[0060] Fourth embodiment

[0061] The third embodiment of the present application provides a method for manufacturing a display device, which is applicable to any of the display devices described above.

[0062] The preparation method comprises

[0063] S1. Providing a substrate 1 having a first surface 101 and a second surface 102 opposite to each other;

[0064] S2. One or more first through holes are formed on the substrate 1 to form a circuit conductive area 103, which passes through the first surface 101 and the second surface 102, and an electrode 3 is provided in the circuit conductive area;

[0065] S3. A driving circuit layer 7 is provided on the second surface 102 outside the circuit conductive area 103, and is connected to one end of the electrode 3 close to the second surface 102; an isolation layer 8 is provided on one side of the second surface 102 to cover the second surface 102, the driving circuit layer 7 and the circuit conductive area 103;

[0066] S4. Fix the light-emitting chip 4 on the circuit conduction area 103 on one side of the first surface 101. The fixing method is not limited. The present application supports and fixes the light-emitting chip 4 by pre-filling the filler 2 in the circuit conduction area 103. The light-emitting chip 4 is connected to one end of the electrode 3 close to the first surface 101. The light-conversion layer 10 may be covered or not covered on the light-emitting chip 4 according to actual needs. A reflective layer 5 is set on the first surface 101 outside the circuit conduction area 103. A light-transmitting layer 6 is set on one side of the first surface 101 to cover the first surface 101, the reflective layer 5, the circuit conduction area 103 and the light-emitting chip 4.

[0067] Fifth embodiment

[0068] In the embodiment of the present application, a manufacturing method is proposed for the display device of the first embodiment, such as Figure 4-Figure 10 As shown, including:

[0069] S1. Provide a substrate 1 (glass substrate), which can be formed by laser cutting, having a first surface 101 and a second surface 102 opposite to each other, make a hole design on the substrate 1, open one or more first through holes to form a circuit conduction area 103, and clean it. Figure 4 ;

[0070] S2. Fill the circuit conductive area 103 of the substrate 1 with a filler 2, using a hot-melt adhesive (such as epoxy resin). When it cools to a semi-fluid state, dig a hole in the middle of the filler 2 to open two second through holes 201, reserve the position of the electrode 3 (metal electrode), and keep it warm. Figure 5 ;

[0071] S3. Place the electrode 3 into the filler 2, and then dry the colloid in the second through hole 201 until it solidifies. Figure 6 ;

[0072] S4. The drive circuit layer 7 is arranged on the second surface 102 of the substrate 1, and is welded to the electrode 3 through the wire 9 (gold wire). Figure 7 ;

[0073] S5. Coating a layer of isolation layer 8 on one side of the second surface 102, covering the drive circuit layer 7, the filler 2, and drying and curing, see Figure 8 ;

[0074] S6. Turn over the substrate 1 and apply a reflective layer 5 (white / silver reflective layer) on the first surface 101 outside the circuit conductive area 103. Fig. 9 ;

[0075] S7. On the surface of the filler 2 on the first surface 101 side, add the light-emitting chip 4 and the light conversion layer 10 material phosphor in turn, connect the bottom of the light-emitting chip 4 to the electrode 3, add the solid crystal glue, and dry and solidify it. Fig.10 ;

[0076] S8. A light-transmitting layer 6 is coated on one side of the first surface 101 to cover the first surface 101, the light-emitting chip 4 and the filler 2 to protect the surface of the substrate 1, and a boss with a second surface microstructure 601 is formed above the corresponding light-emitting chip 4 to diffuse the emitted light. The boss structure can be formed by hot pressing, printing, or laser printing. The shape of the second surface microstructure 601 is not limited as long as it can diffuse the light. Figure 1 .

[0077] Sixth embodiment

[0078] In the embodiment of the present application, a preparation method is proposed for the display device of the second embodiment, such as Figure 11-Figure 16 As shown, including:

[0079] S1. Provide a substrate 1 (glass substrate), which can be formed by laser cutting, having a first surface 101 and a second surface 102 opposite to each other, make a hole design on the substrate 1, open one or more first through holes to form a circuit conductive area 103, and form a first surface microstructure 104 on the first surface 101 outside the circuit conductive area 103, and clean it. Fig.11 ;

[0080] S2. Fill the circuit conductive area 103 of the substrate 1 with a filler 2, using a hot-melt adhesive (such as epoxy resin). When it cools to a semi-fluid state, dig a hole in the middle of the filler 2 to open two second through holes 201, reserve the position of the electrode 3 (metal electrode), and keep it warm. Fig.12 ;

[0081] S3. Place the electrode 3 into the filler 2, and then dry the colloid in the second through hole 201 until it solidifies. Fig.13 ;

[0082] S4. Turn over the substrate 1, and lay the driving circuit layer 7 on the second surface 102 outside the circuit conductive area 103, that is, the surface layer opposite to the first surface microstructure 104, and weld it to the electrode 3 through the wire 9 (gold wire), see Fig.14 ;

[0083] S5. Coating a layer of isolation layer 8 on one side of the second surface 102, covering the drive circuit layer 7, the filler 2, and drying and curing, see Fig.15 ;

[0084] S6. Turn the substrate 1 over again, and apply a reflective layer 5 (white / silver reflective layer) on the surface of the first surface microstructure 104. At this time, the reflective layer 5 has the first surface microstructure; on the surface of the filler 2 on the first surface 101 side, add the light-emitting chip 4 and the phosphor material of the light conversion layer 10 in sequence, connect the bottom of the light-emitting chip 4 to the electrode 3, add the die-bonding glue, and dry and solidify it. Fig.16 ;

[0085] S7. A light-transmitting layer 6 is coated on one side of the first surface 101 to cover the first surface 101, the light-emitting chip 4 and the filler 2 to protect the surface of the substrate 1, and a boss with a second surface microstructure 601 is formed above the corresponding light-emitting chip 4 to diffuse the emitted light. The boss structure can be formed by hot pressing, printing, or laser printing. The shape of the surface microstructure 601 is not limited as long as it can diffuse the light. Figure 2 .

[0086] Seventh embodiment

[0087] In the present application, a display device is also provided, which includes a display panel and a backlight module; the backlight module includes the light-emitting device described in any of the above embodiments, and the specific structure and function of the light-emitting device can refer to the relevant description of the light-emitting device provided in the above embodiments, which will not be repeated here. It can be understood that, for practical needs, other component structures required for the display device can be added on the basis of the display panel and the backlight module, including but not limited to optical components, frames, electronic devices, etc.

[0088] Furthermore, a light-emitting device including a light-emitting chip 4 of three primary colors, or a light-emitting device including a light conversion layer 10 of three primary colors may also be directly used as a display device.

[0089] It should be easily understood that “on,” “above,” and “over” in this application should be interpreted in the broadest manner, so that “on” not only means “directly on something,” but also includes the meaning of “on something” with intervening features or layers therebetween, and “above” or “over” not only includes the meaning of “above something” or “over,” but also may include the meaning of “above something” or “over” with no intervening features or layers therebetween (i.e., directly on something).

[0090] As used herein, the term "layer" may refer to a portion of a material that includes an area having a certain thickness. A layer may extend over the entire underlying structure or overlying structure, or may have an extent that is smaller than the extent of the underlying or overlying structure. In addition, a layer may be an area of ​​a homogeneous or inhomogeneous continuous structure whose thickness is less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of the continuous structure or between any pairs of transverse planes at the top and bottom surfaces. A layer may extend laterally, vertically, and / or along a tapered surface.

[0091] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A light emitting device, It is characterized in that It includes a substrate, an electrode, a light-emitting chip, a light-transmitting layer, a driving circuit layer and an isolation layer; The substrate comprises a first surface and a second surface opposite to each other, and one or more circuit conducting areas penetrating the first surface and the second surface; electrodes are arranged in the circuit conducting areas; The light emitting chip is disposed on a circuit conducting area on one side of the first surface and connected to one end of the electrode close to the first surface; The light-transmitting layer is disposed on one side of the first surface, covering the first surface, the circuit conducting area and the light-emitting chip; The driving circuit layer is arranged on the second surface outside the circuit conduction area and is connected to one end of the electrode close to the second surface; the isolation layer is arranged on one side of the second surface, covering the second surface, the driving circuit layer and the circuit conduction area.

2. The light emitting device according to claim 1, It is characterized in that The circuit conduction area is filled with a filler, the filler is provided with a second through hole penetrating the filler, the light emitting chip is arranged on a surface of the filler on one side of the first surface, and the electrode is arranged in the second through hole.

3. The light emitting device according to claim 2, It is characterized in that The surface of the filler close to the first surface is level with the first surface, and the light-emitting chip arranged on the surface of the filler is located on the first surface; or the surface of the filler close to the first surface is lower than the first surface, and the light-emitting chip arranged on the surface of the filler is located in the circuit conduction area.

4. The light emitting device according to claim 1, It is characterized in that It also includes a reflective layer, which is arranged on the first surface outside the circuit conduction area and is covered by the light-transmitting layer.

5. The light emitting device according to claim 4, It is characterized in that The reflective layer has a first surface microstructure.

6. The light emitting device according to claim 1, It is characterized in that The surface of the light-transmitting layer corresponding to the light-emitting chip and the circuit conducting area has a second surface microstructure.

7. The light emitting device according to claim 6, It is characterized in that The light-transmitting layer corresponding to the light-emitting chip and the circuit conducting area is a boss structure.

8. The light emitting device according to any one of claims 1 to 7, It is characterized in that Also includes: A light conversion layer is arranged between the light emitting chip and the light-transmitting layer, and the light conversion layer covers the light emitting chip.

9. The light emitting device according to claim 1, It is characterized in that The substrate comprises a glass substrate; and / or The light emitting chip comprises a light emitting diode; and / or The electrodes include metal electrodes; and / or The light-transmitting layer comprises a transparent resin colloid layer; and / or The material of the isolation layer includes insulating material and / or thermal conductive material.

10. A method for preparing a light-emitting device according to any one of claims 1 to 9, It is characterized in that include: providing a substrate having a first surface and a second surface opposite to each other; One or more first through holes are opened on the substrate to form a circuit conduction area, which passes through the first surface and the second surface, and electrodes are arranged in the circuit conduction area; A driving circuit layer is arranged on the second surface outside the circuit conducting area and connected to one end of the electrode close to the second surface; an isolation layer is arranged on one side of the second surface to cover the second surface, the driving circuit layer and the circuit conducting area; A light-emitting chip is arranged on the circuit conduction area on one side of the first surface and connected to one end of the electrode close to the first surface; a reflective layer is arranged on the first surface outside the circuit conduction area; and a light-transmitting layer is arranged on one side of the first surface to cover the first surface, the circuit conduction area and the light-emitting chip.

11. The preparation method according to claim 10, It is characterized in that The method also includes disposing a reflective layer on the first surface outside the circuit conducting area.

12. The preparation method according to claim 10 or 11, It is characterized in that The method further comprises arranging a light conversion layer between the light emitting chip and the light-transmitting layer, wherein the light conversion layer covers the light emitting chip.

13. A display device, It is characterized in that include: Display panel and backlight module; The backlight module comprises the light-emitting device according to any one of claims 1 to 9.

Images