Adapter plate, semiconductor device and preparation method thereof

Abstract

The invention provides an adapter plate, a semiconductor device and a preparation method thereof. The preparation method of the adapter plate comprises the following steps: S1, providing a glass substrate; s2, a plurality of open holes are formed in the glass substrate, each open hole is formed through one-time machining, each open hole comprises a blind hole and a through hole penetrating through the glass substrate, each through hole sequentially comprises a first part serving as an interconnection switching hole, a second part serving as a contact hole and a third part serving as a wiring hole from bottom to top, and the blind holes serve as the wiring holes; s3, filling the holes with conductive material layers at one time, wherein the conductive material layers are exposed on the front surface and the back surface of the glass substrate; and S4, forming an electric lead-out structure electrically connected with the conductive material layer on the surface of the glass substrate to prepare the adapter plate. According to the invention, punching of the three material layers of the switching layer, the through hole interconnection layer and the wiring dielectric layer can be completed only through one-time processing, and then one-time filling is carried out, so that the process steps are greatly simplified, the production cost can be greatly reduced, and the production efficiency is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a transfer plate, a semiconductor device and a preparation method thereof. Background Art

[0002] Currently, TSV interposer (silicon via interposer) is mainly used in the chiplet concept to connect small chips. However, the market has also begun to propose the use of glass to prepare interposer TGV (transfer glass via). Compared with TSV, TGV has the following advantages:

[0003] 1) Excellent high-frequency electrical properties. Glass material is an insulator material with a dielectric constant of only about 1 / 3 of that of silicon material, and a loss factor 2-3 orders of magnitude lower than that of silicon material, which greatly reduces substrate loss and parasitic effects, ensuring the integrity of the transmission signal;

[0004] 2) The process is simple, and there is no need to deposit an insulating layer on the substrate surface and the inner wall of the TGV, and there is no need to thin the ultra-thin adapter plate;

[0005] 3) Strong mechanical stability. Even when the thickness of the adapter plate is less than 100μm, the warping is still small.

[0006] The formation process of TGV mainly includes sandblasting, ultrasonic drilling, wet etching, deep reactive ion etching, photosensitive etching, laser etching, laser induced deep etching and focused discharge pore formation, etc. However, these methods also have their own shortcomings, poor compatibility with existing processes, which will lead to complex production processes, and the prepared apertures and inter-hole spacing are difficult to be smaller than existing TSVs, and cannot meet the packaging requirements of existing high-density devices.

[0007] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present application. Summary of the invention

[0008] In view of the shortcomings of the prior art mentioned above, the object of the present invention is to provide a transfer plate, a semiconductor device and a method for preparing the same, so as to solve the problems that the TGV formation method in the prior art has its own shortcomings, poor compatibility with the existing process, resulting in a complicated production process, and the prepared hole diameter and the spacing between holes are difficult to be smaller than the existing TSV, and cannot meet the packaging requirements of existing high-density devices.

[0009] To achieve the above-mentioned object and other related objects, the present invention provides a method for preparing an adapter plate, comprising the steps of:

[0010] S1: providing a glass substrate;

[0011] S2: forming a plurality of openings in the glass substrate, each of which is formed in one process, the openings comprising a blind hole and a through hole penetrating the glass substrate, the through hole comprising, from bottom to top, a first portion used as an interconnection transfer hole, a second portion used as a contact hole, and a third portion used as a wiring hole, the blind hole being used as a wiring hole;

[0012] S3: filling the opening with a conductive material layer at one time, wherein the conductive material layer is exposed on the front and back sides of the glass substrate;

[0013] S4: An electrical lead-out structure electrically connected to the conductive material layer is formed on the surface of the glass substrate to prepare a transfer plate.

[0014] Optionally, the one-step forming and punching process in step S2 includes laser punching and / or mechanical punching.

[0015] Optionally, in step S3, the opening is filled at one time by electroplating, chemical plating and filling with liquid metal.

[0016] Optionally, after the conductive material layer is filled in the opening in step S3, a surface planarization process is further included to ensure that the surface of the conductive material layer does not exceed the surface of the opening.

[0017] Optionally, step S4 includes the step of forming solder balls electrically connected to the conductive material layer using a C4 standard process.

[0018] Optionally, the method for preparing the adapter board includes repeating steps S1 to S3 more than once to obtain a plurality of prefabricated structures, and bonding the obtained prefabricated structures in sequence to obtain a bonding structure, wherein the openings of each prefabricated structure correspond to each other up and down and are electrically connected through a conductive material layer, and then an electrical lead-out structure electrically connected to the conductive material layer is formed on the surface of the bonding structure to prepare the adapter board.

[0019] Optionally, between steps S3 and S4, a step of forming a rewiring layer on a surface of the adapter board away from the electrical lead-out structure is also included, and the rewiring layer is electrically connected to the conductive material layer.

[0020] More optionally, the rewiring layer includes a first wiring layer located on the surface of the glass substrate and a second wiring layer located on the surface of the first wiring layer and electrically connected to the first wiring layer, the first wiring layer and the second wiring layer both include a dielectric layer and a metal wire layer located in the dielectric layer and on the surface of the dielectric layer, wherein the dielectric layer of the first wiring layer is an organic material layer, and the dielectric layer of the second wiring layer is an inorganic material layer.

[0021] The present invention also provides a transfer plate, which is prepared by the transfer plate preparation method described in any of the above schemes.

[0022] The present invention also provides a method for preparing a semiconductor device, comprising the steps of preparing an adapter board by using the method for preparing an adapter board as described in any of the above schemes, and then bonding a chip to the adapter board.

[0023] The present invention also provides a semiconductor device, which is manufactured by using the method for manufacturing a semiconductor device as described in any of the above schemes.

[0024] As described above, the adapter board, semiconductor device and preparation method thereof of the present invention have the following beneficial effects: the improved process design of the present application only requires one laser or mechanical processing to complete the drilling of the three material layers of the transfer layer (Interposer) & through-hole interconnect layer (Via) & wiring dielectric layer (RDL line layer), and then fill them all at once, the process steps are greatly simplified, the difficulty of alignment is significantly reduced, and the alignment accuracy is significantly improved. At the same time, the glass substrate used in the present application is itself an insulator, and has better insulation than semiconductor material substrates such as silicon wafers, so there is no need to form an additional metal diffusion barrier layer, and the glass substrate has a good dielectric constant. Therefore, the use of the present application can greatly reduce production costs, improve production efficiency, and help improve the quality and performance of the prepared devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 The flowchart of the method for preparing the adapter plate provided by the present invention is shown.

[0026] Figure 2 It is a schematic diagram showing the one-time hole forming on the glass substrate during the process of preparing the adapter plate of the present invention.

[0027] Figure 3 A schematic diagram showing a conductive material layer filled in an opening is shown.

[0028] Figure 4 The schematic diagram shows the conductive material layer after planarization processing.

[0029] Figure 5 A schematic diagram showing the formation of solder balls on the back side of a glass substrate.

[0030] Figure 6 An exemplary structural schematic diagram of a prepared prefabricated structure is shown.

[0031] Figure 7 A schematic diagram showing bonding of multiple prefabricated structures to an adapter plate.

[0032] Figure 8 The schematic diagram shows the bonding of the chip to the interposer.

[0033] Fig. 9 A schematic diagram showing the formation of a re-distribution layer on an interposer is shown.

[0034] Fig.10 A schematic diagram showing the formation of solder balls on a surface of an interposer facing away from the redistribution layer is shown. DETAILED DESCRIPTION

[0035] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional view showing the device structure will not be partially enlarged according to the general proportion, and the schematic diagram is only an example, which should not limit the scope of protection of the present invention. In addition, in actual preparation, the three-dimensional dimensions of length, width and depth should be included.

[0036] For ease of description, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0037] In the context of the present application, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0038] It should be noted that the diagrams provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the diagrams only show the components related to the present invention rather than the number, shape and size of the components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed arbitrarily, and the layout of the components may also be more complicated. In order to make the diagrams as concise as possible, not all structures are marked in the drawings.

[0039] like Figure 1 As shown, the present invention provides a method for preparing an adapter plate, which will be described in detail below with reference to the accompanying drawings.

[0040] First, step S1 is performed to provide a glass substrate 11 .

[0041] The glass substrate 11 is preferably made of inorganic glass material that can withstand high temperatures, such as quartz glass doped with inorganic substances such as silicates, borates, phosphates, and fluorides. In one example, the glass substrate 11 is formed by one-piece processing, such as by a float process or a flow hole pull-down process. The thickness of the glass substrate 11 meets the thickness required by the three material layers of the transfer layer, the through-hole interconnect layer, and the wiring dielectric layer. The one-piece processed glass substrate 11 has better mechanical properties and can avoid defects such as gaps between layers during subsequent processing.

[0042] In other examples, the glass substrate 11 may also be formed by bonding multiple material layers at high temperature. Therefore, each material layer may be selected from a suitable material according to the performance requirements of the corresponding structural layer. For example, different structural layers may use glass materials with different dielectric constants.

[0043] The adapter plate manufactured in this embodiment is usually used for wafer-level packaging. Hundreds or thousands of devices are manufactured on the glass substrate 11, so the glass substrate 11 is usually in a circular shape that matches the size of the wafer.

[0044] After providing the glass substrate 11, it can be cleaned with ultrapure water, or first cleaned with a weak acid cleaning solution, then cleaned with ultrapure water, and finally dried. The dried glass substrate 11 can be fixed on the stage by pressing with a fixing ring (the pressing ring presses on the circumferential edge of the glass substrate 11). Or in other examples, it can be fixed on the stage by vacuum adsorption or electrostatic adsorption.

[0045] Next, step S2 is performed to form a plurality of openings in the glass substrate 11. Each opening is formed in one process. The openings include blind holes 12 that do not penetrate the glass substrate 11 and through holes 13 that penetrate the glass substrate 11. The through holes 13 include, from bottom to top, a first portion 131 used as an interconnection transfer hole, a second portion 132 used as a contact hole, and a third portion 133 used as a wiring hole. The blind hole 12 is used as a wiring hole. That is, the first portion 131 is correspondingly formed in the aforementioned transfer layer, the second portion 132 is formed in the aforementioned through hole interconnection layer, the third portion 133 is formed in the aforementioned wiring dielectric layer, and the blind hole 12 is also formed in the aforementioned wiring dielectric layer (that is, the transfer layer, the through hole interconnection layer and the wiring dielectric layer are all made of the glass substrate 11 material). The dividing points of the various parts of the through hole 13 are not strictly distinguished. In a preferred example, the upper size of the through hole 13 is larger than the lower size. Alternatively, the aperture of the through hole 13 decreases gradually from top to bottom, that is, the aperture of the third portion 133> the aperture of the second portion 132> the aperture of the first portion 131 and the pattern density requirements in different material layers are met. The upper end surfaces of the third portion 133 and the blind hole 12 can be arc surfaces, so that the through hole 13 and the blind hole 12 have trumpet-shaped openings, which will facilitate subsequent metal filling.

[0046] It should be noted that, in the present embodiment, all openings are formed by one-time processing, but this does not mean that the openings must be formed synchronously, and the forming methods of the openings may be the same or different. In a preferred example, the one-time processing and punching process in this step includes laser punching and / or mechanical punching. For example, some openings are formed by laser punching, and some are formed by mechanical processing, but preferably all openings are formed by the same method, such as laser processing. During the laser drilling process, the positioning device provided by the laser equipment can be used to determine the position of the openings before drilling, or a mask with a defined opening area can be used for laser irradiation drilling. If the position of the openings is defined by a mask, the mask can continue to be retained in the metal filling process in the next step until it is removed in the subsequent surface flattening process.

[0047] During the laser drilling process, the size of the hole can be controlled by precisely controlling the size of the laser beam, and small-sized aperture processing can be achieved, so it can be suitable for chiplet packaging. In addition, during the laser irradiation drilling of the same through hole 13, the size of the hole can be adjusted by adjusting the size of the laser beam to meet the size requirements of different parts of the through hole 13. After the preparation of each hole is completed, the glass substrate 11 can be cleaned to remove processing residues, and / or surface polishing can be performed to make each hole have a smooth and flat surface. The structure obtained after the hole preparation is completed is as follows Figure 2 shown.

[0048] Next, step S3 is performed to fill the conductive material layer 14 in the opening at one time, especially the metal material of the three parts of the through hole 13 is filled at one time, and the filled conductive material layer 14 is exposed on the front and back sides of the glass substrate 11. Of course, it is easy to understand here that only the conductive material layer 14 located in the through hole 13 can be exposed at both ends of the end surface of the glass substrate 11, while only one surface of the conductive material layer 14 in the blind hole 12 is exposed at the end surface of the glass substrate 11.

[0049] To ensure the filling quality, this step is preferably performed by first using electroplating, chemical plating and filling with liquid metal in several ways (preferably a single way) to fill all the openings at once, and the filled conductive material layer 14 will also extend to the entire surface of the glass substrate 11 to obtain the following Figure 3 The structure shown in FIG. 1 is then subjected to surface planarization treatment, such as chemical mechanical polishing, so that the surface of the conductive material layer 14 does not exceed the surface of the opening, and the structure shown in FIG. 1 is obtained. Figure 4 The structure shown.

[0050] For example, in one example, molten liquid metal can be injected into each opening. And in order to further improve the filling quality, the glass substrate 11 can be rotated during the filling process to accelerate the liquid metal to flow into the opening, avoiding defects such as holes during the filling process. The filling process of this step is preferably carried out under a vacuum or inert gas atmosphere to avoid metal oxidation contamination. The filled metal material layer can be a commonly used interconnect metal material such as copper, aluminum, tungsten, etc. In another example, the conductive material layer 14 can be formed by an electroplating process. During the metal filling process, the glass substrate 11 can be heated to prevent the metal material from being locally cooled and affecting the filling quality.

[0051] Next, step S4 is performed to form an electrical lead-out structure electrically connected to the conductive material layer 14 on the surface of the glass substrate 11 to prepare a transfer board. The electrical lead-out structure will directly contact the conductive material layer 14 in the through hole 13 to achieve electrical connection.

[0052] The electrical lead structure may be, for example, a conductive column such as a copper column, which may be formed by first forming a corresponding metal layer on the surface of the glass substrate 11 using a physical vapor deposition process, and then photolithography and etching to obtain the conductive column. Alternatively, the prepared electrical structure may be formed by Figure 4 The structures shown are bonded.

[0053] In a preferred example of the present embodiment, the step S4 includes the step of forming a solder ball 15 electrically connected to the conductive material layer 14 by using the C4 standard process. For example, a layer of low melting point metal material layer, such as a nickel layer, is first coated on the surface of the conductive material layer 14 corresponding to the through hole 13, and then a layer of conductive glue is coated, and then the solder ball 15 is attached to the conductive glue, and is hot-pressed at high temperature to bond the solder ball 15 to the conductive material layer 14. The C4 process can achieve the requirements of thinner package shape and higher pin density, and has the advantages of excellent electrical performance and the reworkability of the bump chip 18. In addition, the surface tension of the C4 solder bump during the melting process can also help the solder to self-align with the metal layer, which reduces the requirements for deposition accuracy and patch accuracy to a certain extent.

[0054] After the solder balls 15 are prepared, a capillary bottom filling process may be performed to form a bottom filling layer 16 covering the solder joints between the solder balls 15 and the conductive material layer 14. The bottom filling layer 16 may cover the entire back side of the glass substrate 11 (i.e., the surface where the solder balls 15 are located) to protect the glass substrate 11. The materials of the bottom filling layer 16 include, but are not limited to, organic materials such as epoxy resin and polyimide.

[0055] In other examples, a bottom filling layer 16 covering the back of the glass substrate 11 may be formed by processes including but not limited to spin coating, spray coating, etc., and then an opening to expose the through hole 13 is formed in the bottom filling layer 16 by a photolithography process, and then a solder ball 15 is formed in the opening. However, this method is relatively more complicated and is therefore not preferred. The structure of the transfer board obtained after the ball implantation process is as follows: Figure 5 shown.

[0056] If the traditional Damascus process is used for exposure and development to define the pattern, the preparation of through holes including the three material layers of the transfer layer (Interposer) & through hole interconnect layer (Via) & wiring dielectric layer (RDL line layer) requires three processes of photoresist coating / exposure / development, and three times of photoresist material / three times of developer / three times of photomask / three times of electroplating / dielectric layer material are required, which not only greatly increases the cost, but also complicates the process and greatly reduces the equipment output rate. At the same time, the difficulty of aligning through holes in different material layers increases, resulting in a decrease in production yield.

[0057] In contrast, the improved process design of this embodiment only requires one laser or mechanical processing to complete the drilling of the three material layers of the transfer layer (Interposer) & through-hole interconnect layer (Via) & wiring dielectric layer (RDL line layer), and then fill them all at once, which greatly simplifies the process steps, significantly reduces the difficulty of alignment, and significantly improves the alignment accuracy. At the same time, the glass substrate used in this embodiment is an insulator itself, which has better insulation than semiconductor material substrates such as silicon wafers, so there is no need to form an additional metal diffusion barrier layer, and the glass substrate has a good dielectric constant. Therefore, the use of this application can greatly reduce production costs, improve production efficiency, and help improve the quality and performance of the prepared device.

[0058] In addition, by adopting the present application, a hybrid bond method can be used to complete the production of a multi-layer rewiring layer, which can meet diverse packaging requirements, which will be introduced one by one below.

[0059] like Figure 6 As shown, in another example provided by the present invention, the method for preparing the adapter plate includes repeating steps S1 to S3 more than once to obtain a plurality of adapter plates as shown in FIG. Figure 6 The prefabricated structure shown in FIG. 1 is bonded in sequence to obtain the prefabricated structure shown in FIG. Figure 7 In the bonding structure shown, the openings of each prefabricated structure correspond to each other up and down, and in particular, the through holes 13 of each prefabricated structure correspond to each other up and down, and the electrical connection is achieved by the conductive material layer 14 in the through hole 13 being in contact with each other, and then an electrical lead-out structure electrically connected to the conductive material layer 14 is formed on the surface of the bonding structure. For example, the C4 standard process is also performed to implant balls to prepare a transfer board. The material and thickness of each material layer of each prefabricated structure can be the same or different, and the corresponding opening sizes can be the same or different, but the apertures of the through holes 13 corresponding to the upper and lower parts are preferably the same. Of course, it should be noted that in this embodiment, the glass substrate 11 of each prefabricated structure can no longer be strictly divided into a transfer layer, a through hole interconnection layer and a wiring dielectric layer, and thus the corresponding through hole 13 is no longer strictly divided into three parts from bottom to top.

[0060] In other examples, the following can also be prepared: Figure 5 After the adapter plate is installed, Figure 5 The adapter plate shown is connected to several Figure 6 However, by comparison, bonding first and then ball implanting can help prevent the solder balls 15 from being damaged and ensure the electrical performance of the device.

[0061] After the transfer board is manufactured, the chip 18 can be packaged, for example, the chip 18 is bonded to the surface of the transfer board facing away from the solder ball 15 to obtain the following: Figure 8 Alternatively, the chip 18 may be bonded to Figure 7 After the bonding structure shown, the back side ball planting is performed, and there is no strict restriction on this. After the chip 18 is packaged, the steps of cutting and independent packaging can be continued, and this will not be expanded in detail.

[0062] It should be noted that, although the entire process of making the adapter plate is divided into several steps in this embodiment, in the actual production process, there is no strict distinction between the aforementioned steps. For example, the production of different prefabricated structures can be carried out simultaneously or successively. For the packaging manufacturer, the production of the adapter plate can be completed in the same packaging factory before the chip 18 is packaged, or it can be purchased from outside.

[0063] In another example, between steps S3 and S4, a step of forming a rewiring layer 17 on the surface of the adapter plate away from the electrical lead-out structure is included to obtain Fig. 9 In the structure shown, the rewiring layer 17 is electrically connected to the conductive material layer 14 .

[0064] The rewiring layer 17 may be a single metal layer structure, or a composite structure including a dielectric layer 171 and a metal wire layer 172, or a double wiring layer structure. Fig. 9 As shown, the rewiring layer 17 includes a first wiring layer located on the surface of the glass substrate and a second wiring layer located on the surface of the first wiring layer and electrically connected to the first wiring layer, and both the first wiring layer and the second wiring layer include a dielectric layer 171 and a metal wire layer 172 located in the dielectric layer 171 and on the surface of the dielectric layer 171, wherein the dielectric layer 171 of the first wiring layer is an organic material layer, such as a polymer material layer such as epoxy resin and polyimide, and the dielectric layer 171 of the second wiring layer is an inorganic material layer, such as a silicon oxide layer. In other examples, the dielectric layer 171 of the first wiring layer may be an inorganic material layer and the dielectric layer 171 of the second wiring layer may be an organic material layer.

[0065] After the rewiring layer 17 is fabricated, an electrical lead-out structure may be formed on the surface of the glass substrate 11 away from the rewiring layer 17 to obtain a Fig.10 The structure shown.

[0066] The present invention also provides a transfer plate, which is prepared by the transfer plate preparation method described in any of the above schemes. Therefore, according to the different preparation methods, the structure of the final prepared transfer plate is also different. For example, in some examples, the transfer plate can be as follows: Figure 5As shown, it includes a glass substrate 11, a plurality of blind holes 12 located in the glass substrate 11, and a through hole 13 penetrating the glass substrate 11. The through hole 13 includes, from bottom to top, a first portion 131 used as an interconnection transfer hole, a second portion 132 used as a contact hole, and a third portion 133 used as a wiring hole. The through hole 13 and the blind hole 12 are filled with a conductive material layer 14. The surface of the glass substrate 11 is provided with an electrical lead structure, such as a solder ball 15, which is in contact with and electrically connected to the conductive material layer 14 in the through hole 13. Alternatively, the transfer board can be as follows Figure 8 As shown in Figure 5 The structure shown in the figure is further provided with a plurality of prefabricated structures bonded to each other, each of which comprises a glass substrate 11, a plurality of blind holes 12 in the glass substrate 11, and a through hole 13 penetrating the glass substrate 11, wherein the through holes 13 and the blind holes 12 are filled with a conductive material layer 14. Alternatively, the adapter plate may also be as follows Fig.10 As shown in Figure 5 On the basis of the structure shown, there are a plurality of rewiring layers 17 with the same or different structures and materials.

[0067] For more information about various types of adapter plates, please refer to the corresponding introduction to their respective preparation methods mentioned above, which will not be repeated for the purpose of brevity.

[0068] Compared with the prior art, the adapter plate with glass through holes provided by the present invention has a simpler preparation process, so its cost can be relatively lower, and adapter plates of various structures can be prepared according to different needs to meet diverse packaging needs. Moreover, the adapter plate provided by the present invention has a transfer layer, a through hole interconnection layer, and a wiring dielectric layer made of glass. This all-glass adapter plate has excellent dielectric properties and is applied to packaging devices, which helps to improve the electrical performance of the device.

[0069] The present invention also provides a method for preparing a semiconductor device, the method comprising preparing an adapter board by using the method for preparing an adapter board as described in any of the above schemes, and then bonding a chip to the adapter board. Therefore, the introduction to the preparation method of the adapter board can be cited here, and will not be repeated for the purpose of brevity.

[0070] The method for preparing the semiconductor device is more accurately a method for packaging a semiconductor device. Chip bonding can be performed by wire bonding or die bonding. The bonded chips can be various active and / or passive devices. After chip bonding is completed, the steps of cutting and packaging the cut chips into a packaging frame can be continued.

[0071] The method for preparing the semiconductor device provided by the present invention can meet various packaging requirements, and the packaging process is greatly simplified, and the packaging efficiency and yield can be significantly improved.

[0072] The present invention also provides a semiconductor device, which is prepared by the method for preparing a semiconductor device as described in any of the above schemes. The semiconductor device can be Figure 8 The structure shown may also include a structure similar to the adapter plate shown in 10, depending on the specific needs and processing technology, and there is no limitation on this.

[0073] In summary, the preparation method of the adapter provided in the present application has an improved process design, and only one laser or mechanical processing is required to complete the punching of the three material layers of the transfer layer (Interposer) & through-hole interconnect layer (Via) & wiring dielectric layer (RDL linelayer), and then fill them up at one time, the process steps are greatly simplified, the alignment difficulty is significantly reduced, and the alignment accuracy is significantly improved. At the same time, the glass substrate used in the present application is itself an insulator, and has better insulation than semiconductor material substrates such as silicon wafers, so there is no need to form an additional metal diffusion barrier layer, and the glass substrate has a good dielectric constant. Therefore, the use of the present application can greatly reduce production costs, improve production efficiency, and help improve the quality and performance of the prepared device. Therefore, the present invention effectively overcomes the various shortcomings in the prior art and has a high industrial utilization value.

[0074] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for preparing an adapter plate, characterized in that: Includes steps: S1: providing a glass substrate; S2: forming a plurality of openings in the glass substrate, each of which is formed in one process, the openings comprising a blind hole and a through hole penetrating the glass substrate, the through hole comprising, from bottom to top, a first portion used as an interconnection transfer hole, a second portion used as a contact hole, and a third portion used as a wiring hole, the blind hole being used as a wiring hole; S3: filling the opening with a conductive material layer at one time, wherein the conductive material layer is exposed on the front and back sides of the glass substrate; S4: An electrical lead-out structure electrically connected to the conductive material layer is formed on the surface of the glass substrate to prepare a transfer plate.

2. The method for preparing the adapter plate according to claim 1, characterized in that: The one-time forming and punching process in step S2 includes laser punching and / or mechanical punching; and the opening is filled at one time by electroplating, chemical plating and filling with liquid metal in step S3.

3. The method for preparing the adapter plate according to claim 1, characterized in that: After the conductive material layer is filled in the opening in step S3, a surface planarization process is also included to ensure that the surface of the conductive material layer does not exceed the surface of the opening.

4. The method for preparing the adapter plate according to claim 1, characterized in that: The step S4 includes the step of forming solder balls electrically connected to the conductive material layer using the C4 standard process.

5. The method for preparing the adapter plate according to claim 1, characterized in that: The preparation method of the adapter plate includes repeating steps S1 to S3 more than once to obtain a plurality of prefabricated structures, and bonding the obtained prefabricated structures in sequence to obtain a bonding structure, wherein the openings of each prefabricated structure correspond to each other up and down and are electrically connected through a conductive material layer, and then an electrical lead-out structure electrically connected to the conductive material layer is formed on the surface of the bonding structure to prepare the adapter plate.

6. The method for preparing the adapter plate according to any one of claims 1 to 5, characterized in that: The step between steps S3 and S4 also includes a step of forming a rewiring layer on the surface of the adapter board away from the electrical lead-out structure, wherein the rewiring layer is electrically connected to the conductive material layer.

7. The method for preparing the adapter plate according to claim 6, characterized in that: The rewiring layer includes a first wiring layer located on the surface of the glass substrate and a second wiring layer located on the surface of the first wiring layer and electrically connected to the first wiring layer. The first wiring layer and the second wiring layer both include a dielectric layer and a metal wire layer located in the dielectric layer and on the surface of the dielectric layer. The dielectric layer of the first wiring layer is an organic material layer, and the dielectric layer of the second wiring layer is an inorganic material layer.

8. An adapter plate, characterized in that: The adapter plate is prepared according to the method for preparing an adapter plate according to any one of claims 1 to 7.

9. A method for preparing a semiconductor device, characterized in that: The method for preparing the semiconductor device comprises the steps of preparing an adapter board by using the method for preparing an adapter board according to any one of claims 1 to 7, and then bonding a chip to the adapter board.

10. A semiconductor device, characterized in that: The semiconductor device is manufactured by the method for manufacturing a semiconductor device according to claim 9.

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