P-type gallium oxide material and preparation method and application thereof

Abstract

The invention discloses a p-type gallium oxide material and a preparation method and application thereof, and relates to the technical field of semiconductor materials. The method for preparing the p-type gallium oxide material comprises the following steps: placing a beta-Ga2O3 single crystal substrate in a cavity of a deposition system, introducing an organic gallium source and N2O, and carrying out homoepitaxial growth on the beta-Ga2O3 single crystal substrate through an organic metal chemical vapor deposition method to obtain the p-type nitrogen-doped beta-Ga2O3 material. In the process of homoepitaxial growth on a beta-Ga2O3 single crystal substrate, N atoms in N2O are doped into beta-Ga2O3 in a displacement doping form, so that the p-type nitrogen-doped beta-Ga2O3 material is formed. The preparation of the p-type beta-Ga2O3 material is realized in a homoepitaxy mode, and the p-type beta-Ga2O3 material can be used for preparing a transverse device and a longitudinal device, so that popularization and application of gallium oxide devices are facilitated.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor materials, and in particular to a p-type gallium oxide material and a preparation method and application thereof. Background Art

[0002] Gallium oxide (β-Ga2O3) is an n-type wide bandgap semiconductor due to its overly flat valence band, wide bandgap, and serious unintentional donor doping. It is precisely because of the lack of p-type β-Ga2O3 that β-Ga2O3, as a material for power devices, needs to rely on compounds such as p-type nickel oxide and p-type BN to form a pn junction. However, this heterojunction needs to overcome the following three problems: 1. Heterogeneous interface. For example, β-Ga2O3 is a monoclinic system. During the heteroepitaxial process, multiple domains are often generated due to poor symmetry. The quality of the β-Ga2O3 crystal obtained by heteroepitaxialization is often poor. 2. The bandgap width of the heterojunction is narrow. β-Ga2O3 is considered to be an ideal power device material mainly because of its ultra-wide bandgap. When other p-type compounds and n-type β-Ga2O3 are used to form a pn junction, the bandgap width of the p-type compound is narrow, which will greatly reduce the withstand voltage characteristics of the pn junction. 3. Stability. The p-type nickel oxide, which is currently the most commonly used, has poor stability and cannot be used as an ideal material for high-voltage power devices. Therefore, only p-type β-Ga2O3 can demonstrate the powerful performance of β-Ga2O3.

[0003] At present, the research on p-type β-Ga2O3 is extremely limited, mainly concentrated in the theoretical calculation stage. The first principle calculation believes that due to the wide band gap, most p-type doped β-Ga2O3 exhibits deep energy levels, that is, p-type that cannot conduct electricity at room temperature. However, it is well known that theoretical calculations have great limitations, and their doping concentration is far from the order of one millionth or even one ten-millionth of semiconductor doping, so the reference value of their research results is low. Foreign scholars conducted high-temperature Hall tests on the intrinsic β-Ga2O3 epitaxial layer grown on sapphire and found that it exhibited a deep energy level greater than 0.2eV. However, this result is not convincing, because there are a large number of crystal domains in heteroepitaxiality, and this structure will seriously deteriorate the crystal quality of the epitaxial layer. Therefore, it cannot be proved that β-Ga2O3 cannot achieve room temperature p-type.

[0004] Therefore, there is an urgent need to develop a simple and effective method to prepare p-type β-Ga2O3. Summary of the invention

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a p-type gallium oxide material and a preparation method and application thereof, aiming to provide a method for preparing a p-type β-Ga2O3 material to solve the problem that the existing β-Ga2O3 is an n-type semiconductor and needs to form a heterogeneous pn junction with other semiconductors when used, thereby having a heterogeneous interface and lattice mismatch.

[0006] The technical solution of the present invention is as follows:

[0007] A first aspect of the present invention provides a method for preparing a p-type gallium oxide material on a gallium oxide substrate, comprising the following steps:

[0008] Providing β-Ga2O3 single crystal substrate;

[0009] The β-Ga2O3 single crystal substrate is placed in the cavity of a deposition system, an organic gallium source and N2O are introduced, and homoepitaxial growth is performed on the β-Ga2O3 single crystal substrate by an organic metal chemical vapor deposition method to obtain a p-type nitrogen-doped β-Ga2O3 material.

[0010] Optionally, the metal organic chemical vapor deposition method adopts a growth temperature of 800-1200° C. and a growth pressure of 50-500 mbar.

[0011] Optionally, the flow rate of the organic gallium source is 20-200 sccm, and the flow rate of the N2O is 1000-50000 sccm.

[0012] Optionally, the organic gallium source includes at least one of triethylgallium, diisobutylgallium and trimethylgallium.

[0013] Optionally, a carrier gas is introduced simultaneously with the introduction of the organic gallium source, and the carrier gas is Ar.

[0014] Optionally, the homoepitaxial growth time is 30 to 360 minutes.

[0015] A second aspect of the present invention provides a p-type nitrogen-doped β-Ga2O3 material, which is prepared using the preparation method of the present invention as described above.

[0016] According to a third aspect of the present invention, a gallium oxide-based composite layer is provided, wherein the gallium oxide-based composite layer comprises a β-Ga2O3 single crystal substrate and a p-type nitrogen-doped β-Ga2O3 epitaxial layer located on the surface of the β-Ga2O3 single crystal substrate, and the p-type nitrogen-doped β-Ga2O3 epitaxial layer comprises the p-type nitrogen-doped β-Ga2O3 material as described above in the present invention.

[0017] In a fourth aspect of the present invention, a method for preparing a gallium oxide-based composite layer is provided, wherein the gallium oxide-based composite layer comprises a β-Ga2O3 single crystal substrate and a p-type nitrogen-doped β-Ga2O3 epitaxial layer located on the surface of the β-Ga2O3 single crystal substrate, and the method for preparing the gallium oxide-based composite layer comprises the following steps:

[0018] By adopting the method described above in the present invention, a p-type nitrogen-doped β-Ga2O3 material is grown on a β-Ga2O3 single crystal substrate to form a p-type nitrogen-doped β-Ga2O3 epitaxial layer, thereby obtaining the gallium oxide-based composite layer.

[0019] A fifth aspect of the present invention provides an application of the p-type nitrogen-doped β-Ga2O3 material as described above or the gallium oxide-based composite layer as described above in a gallium oxide power device.

[0020] Beneficial effects: The present invention uses β-Ga2O3 single crystal as substrate, N2O as oxygen source and nitrogen source, and adopts metal organic chemical vapor deposition (MOCVD) method to perform homoepitaxial growth on β-Ga2O3 single crystal substrate. In this process, N (nitrogen) atoms in N2O are doped into β-Ga2O3 in the form of substitutional doping, so that in-situ doping of N atoms is achieved to form p-type nitrogen-doped β-Ga2O3 material. The present invention realizes the preparation of p-type β-Ga2O3 material on β-Ga2O3 single crystal substrate by homoepitaxial method, so there are no problems such as heterogeneous interface and lattice mismatch. At the same time, when used as pn junction in β-Ga2O3 power devices, the excellent properties of β-Ga2O3 can be fully utilized. The p-type β-Ga2O3 material realized by the present invention using homoepitaxial technology can be used to prepare lateral devices and vertical devices, which is conducive to the promotion and application of β-Ga2O3-based devices. The method provided by the present invention is simple, efficient and is expected to realize the industrial production of p-type nitrogen-doped β-Ga2O3 epitaxial layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 Schematic diagram of the process for preparing p-type nitrogen-doped β-Ga2O3 material in an embodiment of the present invention.

[0022] Figure 2 This is the roughness test result of the p-type nitrogen-doped β-Ga2O3 epitaxial layer prepared in Example 1.

[0023] Figure 3 This is the roughness test result of the p-type nitrogen-doped β-Ga2O3 epitaxial layer prepared in Example 2.

[0024] Figure 4 This is the roughness test result of the p-type nitrogen-doped β-Ga2O3 epitaxial layer prepared in Example 3. DETAILED DESCRIPTION

[0025] The present invention provides a p-type gallium oxide epitaxial layer, a gallium oxide-based composite layer, and a preparation method and application thereof. To make the purpose, technical solution and effect of the present invention clearer and more specific, the present invention is further described in detail below. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0026] Unless otherwise defined, all technical terms and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0027] An embodiment of the present invention provides a method for preparing a p-type gallium oxide material, wherein: Figure 1 As shown, the method for preparing p-type gallium oxide material comprises the following steps:

[0028] S1. Providing a β-Ga2O3 single crystal substrate (n-type);

[0029] S2. Placing the β-Ga2O3 single crystal substrate in the cavity of a deposition system, introducing an organic gallium source and N2O, and performing homoepitaxial growth on the β-Ga2O3 single crystal substrate by metal organic chemical vapor deposition to obtain a p-type nitrogen-doped β-Ga2O3 material (or a p-type nitrogen-doped β-Ga2O3 epitaxial layer; therefore, this embodiment also provides a method for preparing a p-type gallium oxide epitaxial layer).

[0030] The present invention uses a β-Ga2O3 single crystal as a substrate, N2O as an oxygen source and a nitrogen source, and adopts an MOCVD method to perform homoepitaxial growth on the β-Ga2O3 single crystal substrate. During this process, N (nitrogen) atoms in N2O are doped into β-Ga2O3 in the form of substitutional doping, so as to achieve in-situ doping of N atoms, form a p-type nitrogen-doped β-Ga2O3 material or a p-type nitrogen-doped β-Ga2O3 epitaxial layer (i.e., a homoepitaxial layer), and the N atoms in N2O are doped into the β-Ga2O3 material in the form of localized N ions. The present invention realizes the preparation of p-type β-Ga2O3 material on a β-Ga2O3 single crystal substrate by homoepitaxial growth, so there are no problems such as heterogeneous interface and lattice mismatch. At the same time, when used as a pn junction in a β-Ga2O3 power device, the excellent properties of β-Ga2O3 can be fully utilized. The p-type β-Ga2O3 material realized by the homoepitaxial technology of the present invention can be used to prepare lateral devices and vertical devices, and has a profound effect on the promotion and application of β-Ga2O3-based devices.

[0031] Specifically, the present invention realizes the preparation of p-type β-Ga2O3 material by in-situ N doping, and N atoms replace O positions to realize in-situ N doping during the growth process. III The defect formation energy on the O is the lowest, so this in-situ doped N atom is most likely to appear on the O III This doping helps to form orbital hybridization of N-2p and O-2p in β-Ga2O3, and form a hole delocalization effect. As the N doping concentration increases, on the one hand, it can effectively alleviate the self-compensation in β-Ga2O3; on the other hand, it helps to form an acceptor energy band near the top of the valence band in the bandgap, and finally realize p-type β-Ga2O3 that conducts electricity at room temperature. In addition, during the growth process, the concentration of N atoms doped in the p-type β-Ga2O3 material can be controlled by controlling the concentration of N atoms in the epitaxial environment (i.e., in the chamber of the deposition system).

[0032] In step S2, in some embodiments, the growth temperature adopted by the metal organic chemical vapor deposition method is 800-1200°C, for example, it can be 800°C, 900°C, 1000°C, 1100°C, 1200°C or any value in a numerical range composed of any two of the above numerical values ​​as endpoints; the growth pressure adopted by the metal organic chemical vapor deposition method is 50-500mbar (millibar), for example, it can be 50mbar, 80mbar, 100mbar, 150mbar, 200mbar, 250mbar, 300mbar, 350mbar, 400mbar, 450mbar, 500mbar or any value in a numerical range composed of any two of the above numerical values ​​as endpoints.

[0033] In some embodiments, the flow rate of the organic gallium source is 20 to 200 sccm (standard cubic centimeters per minute), for example, the flow rate of the organic gallium source is 20 sccm, 50 sccm, 80 sccm, 100 sccm, 120 sccm, 150 sccm, 180 sccm, 200 sccm or any value in a numerical range consisting of any two of the above values ​​as endpoints; the flow rate of the N2O is 1000 to 50000 sccm, for example, the flow rate of the N2O is 1000 sccm, 2000 sccm, 5000 sccm, 8000 sccm, 10000 sccm, 15000 sccm, 20000 sccm, 25000 sccm, 30000 sccm, 35000 sccm, 40000 sccm, 45000 sccm, 50000 sccm or any value in a numerical range consisting of any two of the above values ​​as endpoints.

[0034] In some embodiments, the organic gallium source includes at least one of triethylgallium (TEGa), diisobutylgallium, and trimethylgallium (TMGa), but is not limited thereto.

[0035] In some embodiments, a carrier gas is introduced simultaneously with the introduction of the organic gallium source, and the carrier gas is Ar.

[0036] The present invention does not limit the time of homoepitaxial growth and can be set according to actual needs. For example, the time of homoepitaxial growth is 30 to 360 minutes, specifically 30 minutes, 50 minutes, 80 minutes, 100 minutes, 150 minutes, 200 minutes, 250 minutes, 300 minutes, 350 minutes, 360 minutes or any value in a numerical range consisting of any two of the above numerical values ​​as endpoints.

[0037] An embodiment of the present invention further provides a p-type nitrogen-doped β-Ga2O3 material, which is prepared by the method described above in the embodiment of the present invention.

[0038] An embodiment of the present invention also provides a gallium oxide-based composite layer, wherein the gallium oxide-based composite layer includes a β-Ga2O3 single crystal substrate and a p-type nitrogen-doped β-Ga2O3 epitaxial layer located on the surface of the β-Ga2O3 single crystal substrate, and the p-type nitrogen-doped β-Ga2O3 epitaxial layer includes the p-type nitrogen-doped β-Ga2O3 material as described above in the embodiment of the present invention.

[0039] The embodiment of the present invention further provides a method for preparing a gallium oxide-based composite layer, wherein the gallium oxide-based composite layer comprises a β-Ga2O3 single crystal substrate and a p-type nitrogen-doped β-Ga2O3 epitaxial layer located on the surface of the β-Ga2O3 single crystal substrate, and the method for preparing the gallium oxide-based composite layer comprises the following steps:

[0040] By adopting the method described above in the present invention, a p-type nitrogen-doped β-Ga2O3 material is grown on a β-Ga2O3 single crystal substrate to form a p-type nitrogen-doped β-Ga2O3 epitaxial layer, thereby obtaining the gallium oxide-based composite layer.

[0041] Specifically, the method for preparing the gallium oxide-based composite layer comprises the following steps:

[0042] Providing β-Ga2O3 single crystal substrate;

[0043] The β-Ga2O3 single crystal substrate is placed in the chamber of a deposition system, an organic gallium source and N2O are introduced, and homoepitaxial growth is performed on the β-Ga2O3 single crystal substrate by an organic metal chemical vapor deposition method to form a p-type nitrogen-doped β-Ga2O3 epitaxial layer, thereby obtaining a gallium oxide-based composite layer including a β-Ga2O3 single crystal substrate and the p-type nitrogen-doped β-Ga2O3 epitaxial layer located on the surface of the β-Ga2O3 single crystal substrate.

[0044] An embodiment of the present invention further provides an application of the p-type nitrogen-doped β-Ga2O3 material as described above in a gallium oxide power device.

[0045] The embodiment of the present invention further provides an application of the gallium oxide-based composite layer as described above in the embodiment of the present invention in a gallium oxide power device.

[0046] The present invention will be further described below by means of specific examples.

[0047] The process parameters used in the following examples are shown in Table 1.

[0048] Table 1. Process parameters used in various embodiments

[0049]

[0050]

[0051] Example 1

[0052] This embodiment provides a method for preparing a p-type nitrogen-doped β-Ga2O3 epitaxial layer on a gallium oxide substrate, comprising the following steps:

[0053] (1) Clean the sprinkler head

[0054] Open the chamber of the metal organic chemical vapor deposition (MOCVD) system, turn on the light, turn on the vacuum cleaner, and brush the spray head with the vacuum cleaner brush.

[0055] (2) Clean the graphite plate

[0056] Brush the graphite disk with a vacuum cleaner brush, and then wipe it again with a dust-free cloth dipped in alcohol.

[0057] (3) Place the substrate sheet

[0058] Place the β-Ga2O3 single crystal substrate on the cleaned graphite disk.

[0059] (4) Epitaxial Growth

[0060] Using Ar as a carrier gas, TMGa is carried by the carrier gas and enters the reaction chamber of the MOCVD system from the bubbling bottle, and N2O is introduced at the same time. According to the process parameters in Example 1 in Table 1 (i.e., the growth temperature is 800°C, the growth pressure is 500 mbar, the TMGa flow rate is 20 sccm, the N2O flow rate is 1000 sccm, and the epitaxial time is 360 min), the program menu is compiled, and the program is run (during the program running, pay close attention to the gas flow rate, temperature changes, and valve opening and closing), and homoepitaxial growth of p-type nitrogen-doped β-Ga2O3 material is carried out on the β-Ga2O3 single crystal substrate to form a p-type nitrogen-doped β-Ga2O3 epitaxial layer.

[0061] (5) Sampling

[0062] After the process run is completed, when the temperature drops below 150°C, open the chamber cover, turn on the light, and take out the sample.

[0063] (6) Clean the cavity

[0064] Close the chamber cover, clean the outer surface of the reactor and the glove box with a vacuum cleaner, and turn off the vacuum cleaner and lights.

[0065] Example 2

[0066] This embodiment provides a method for preparing a p-type nitrogen-doped β-Ga2O3 epitaxial layer on a gallium oxide substrate, comprising the following steps:

[0067] (1) Clean the sprinkler head

[0068] Open the chamber of the MOCVD system, turn on the light, turn on the vacuum cleaner, and use the vacuum cleaner brush to brush the spray head.

[0069] (2) Clean the graphite plate

[0070] Brush the graphite disk with a vacuum cleaner brush, and then wipe it again with a dust-free cloth dipped in alcohol.

[0071] (3) Place the substrate sheet

[0072] Place the β-Ga2O3 single crystal substrate on the cleaned graphite disk.

[0073] (4) Epitaxial Growth

[0074] Using Ar as a carrier gas, TMGa is carried by the carrier gas and enters the reaction chamber of the MOCVD system from the bubbling bottle, and N2O is introduced at the same time. According to the process parameters in Example 2 of Table 1 (i.e., the growth temperature is 1200°C, the growth pressure is 50 mbar, the TMGa flow rate is 200 sccm, the N2O flow rate is 50000 sccm, and the epitaxial time is 30 min), the program menu is compiled, and the program is run (during the program running, pay close attention to the gas flow rate, temperature changes, and valve opening and closing), and homoepitaxial growth of p-type nitrogen-doped β-Ga2O3 material is carried out on the β-Ga2O3 single crystal substrate to form a p-type nitrogen-doped β-Ga2O3 epitaxial layer.

[0075] (5) Sampling

[0076] After the process run is completed, when the temperature drops below 150°C, open the chamber cover, turn on the light, and take out the sample.

[0077] (6) Clean the cavity

[0078] Close the chamber cover, clean the outer surface of the reactor and the glove box with a vacuum cleaner, and turn off the vacuum cleaner and lights.

[0079] Example 3

[0080] This embodiment provides a method for preparing a p-type nitrogen-doped β-Ga2O3 epitaxial layer on a gallium oxide substrate, comprising the following steps:

[0081] (1) Clean the sprinkler head

[0082] Open the chamber of the MOCVD system, turn on the light, turn on the vacuum cleaner, and use the vacuum cleaner brush to brush the spray head.

[0083] (2) Clean the graphite plate

[0084] Brush the graphite disk with a vacuum cleaner brush, and then wipe it again with a dust-free cloth dipped in alcohol.

[0085] (3) Place the substrate sheet

[0086] Place the β-Ga2O3 single crystal substrate on the cleaned graphite disk.

[0087] (4) Epitaxial Growth

[0088] Using Ar as a carrier gas, TMGa is carried by the carrier gas and enters the reaction chamber of the MOCVD system from the bubbling bottle, and N2O is introduced at the same time. According to the process parameters in Example 3 of Table 1 (i.e., the growth temperature is 1000°C, the growth pressure is 250 mbar, the TMGa flow rate is 100 sccm, the N2O flow rate is 10000 sccm, and the epitaxial time is 60 min), the program menu is compiled, and the program is run (during the program running, pay close attention to the gas flow rate, temperature changes, and valve opening and closing), and homoepitaxial growth of p-type nitrogen-doped β-Ga2O3 material is carried out on the β-Ga2O3 single crystal substrate to form a p-type nitrogen-doped β-Ga2O3 epitaxial layer.

[0089] (5) Sampling

[0090] After the process run is completed, when the temperature drops below 150°C, open the chamber cover, turn on the light, and take out the sample.

[0091] (6) Clean the cavity

[0092] Close the chamber cover, clean the outer surface of the reactor and the glove box with a vacuum cleaner, and turn off the vacuum cleaner and lights.

[0093] test:

[0094] (1) The p-type nitrogen-doped Ga2O3 epitaxial layers prepared in Example 1, Example 2 and Example 3 were tested using a Hall effect tester. The results are shown in Table 2.

[0095] Table 2. Hall effect test results

[0096]

[0097] The results show that the semiconductor type of the nitrogen-doped β-Ga2O3 epitaxial layer prepared in Example 1, Example 2 and Example 3 is p-type, that is, p-type nitrogen-doped β-Ga2O3 epitaxial layers are prepared in Example 1, Example 2 and Example 3. The hole concentration of the p-type nitrogen-doped β-Ga2O3 epitaxial layer prepared in Example 1 is 9.4×10 17 cm -3 , the mobility is 0.51cm2 / (V·s), and the resistivity is 13.082Ω·cm; the hole concentration of the p-type nitrogen-doped β-Ga2O3 epitaxial layer prepared in Example 2 is 1.4×10 16 cm -3 , the mobility is 0.460cm 2 / (V·s), the resistivity is 979.113Ω·cm; the hole concentration of the p-type nitrogen-doped β-Ga2O3 epitaxial layer prepared in Example 3 is 8.4×10 18 cm -3, mobility is 0.76cm2 / (V·s), and resistivity is 0.977Ω·cm.

[0098] (2) The p-type nitrogen-doped β-Ga2O3 epitaxial layers prepared in Example 1, Example 2 and Example 3 were subjected to thickness test, atomic force microscope test and XRD test. The results are as follows: Figures 2 to 4 And as shown in Table 3.

[0099] Table 3. Roughness, rocking curve half-width and thickness results

[0100]

[0101] The results show that the thickness of the p-type nitrogen-doped β-Ga2O3 epitaxial layer prepared in Example 1 is 1.2μm, the roughness is 2.43nm, and the half-width of the rocking curve is 108arcsec; the thickness of the p-type nitrogen-doped β-Ga2O3 epitaxial layer prepared in Example 2 is 0.7μm, the roughness is 1.75nm, and the half-width of the rocking curve is 223.2arcsec; the thickness of the p-type nitrogen-doped β-Ga2O3 epitaxial layer prepared in Example 3 is 0.7μm, the roughness is 5.48nm, and the half-width of the rocking curve is 140.4arcsec.

[0102] In summary, the present invention uses β-Ga2O3 single crystal as substrate, N2O as oxygen source and nitrogen source, and adopts organic metal chemical vapor deposition method to perform homoepitaxial growth on β-Ga2O3 single crystal substrate. In this process, N (nitrogen) atoms in N2O are doped into β-Ga2O3 in the form of substitutional doping, so that in-situ doping of N atoms is achieved to form p-type nitrogen-doped β-Ga2O3 material. The present invention realizes the preparation of p-type β-Ga2O3 material on β-Ga2O3 single crystal substrate by homoepitaxial method, so there are no problems such as heterogeneous interface and lattice mismatch. At the same time, when used as pn junction for β-Ga2O3 power devices, the excellent properties of β-Ga2O3 can be fully utilized. The p-type β-Ga2O3 material realized by the present invention using homoepitaxial technology can be used to prepare lateral devices and vertical devices, which has a very far-reaching effect on the promotion and application of β-Ga2O3-based devices.

[0103] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A method for preparing a p-type gallium oxide material, characterized in that: The steps include: Providing β-Ga2O3 single crystal substrate; The β-Ga2O3 single crystal substrate is placed in the cavity of a deposition system, an organic gallium source and N2O are introduced, and homoepitaxial growth is performed on the β-Ga2O3 single crystal substrate by an organic metal chemical vapor deposition method to obtain a p-type nitrogen-doped β-Ga2O3 material.

2. The method according to claim 1, characterized in that: The organic metal chemical vapor deposition method adopts a growth temperature of 800-1200° C. and a growth pressure of 50-500 mbar.

3. The method according to claim 2, characterized in that The flow rate of the organic gallium source is 20-200 sccm, and the flow rate of the N2O is 1000-50000 sccm.

4. The method according to claim 3, characterized in that The organic gallium source includes at least one of triethylgallium, diisobutylgallium and trimethylgallium.

5. The method according to claim 4, characterized in that The organic gallium source is introduced at the same time as a carrier gas, and the carrier gas is Ar.

6. The method according to claim 5, characterized in that The homoepitaxial growth time is 30 to 360 minutes.

7. A p-type nitrogen-doped β-Ga2O3 material, characterized in that: The method is prepared by any one of claims 1 to 6.

8. A gallium oxide-based composite layer, characterized in that: The gallium oxide-based composite layer includes a β-Ga2O3 single crystal substrate and a p-type nitrogen-doped β-Ga2O3 epitaxial layer located on the surface of the β-Ga2O3 single crystal substrate, and the p-type nitrogen-doped β-Ga2O3 epitaxial layer includes the p-type nitrogen-doped β-Ga2O3 material described in claim 7.

9. A method for preparing a gallium oxide-based composite layer, characterized in that: The gallium oxide-based composite layer comprises a β-Ga2O3 single crystal substrate and a p-type nitrogen-doped β-Ga2O3 epitaxial layer located on the surface of the β-Ga2O3 single crystal substrate. The preparation method of the gallium oxide-based composite layer comprises the following steps: The method described in any one of claims 1 to 6 is used to grow a p-type nitrogen-doped β-Ga2O3 material on a β-Ga2O3 single crystal substrate to form a p-type nitrogen-doped β-Ga2O3 epitaxial layer, thereby obtaining the gallium oxide-based composite layer.

10. Use of the p-type nitrogen-doped β-Ga2O3 material according to claim 7 or the gallium oxide-based composite layer according to claim 8 in a gallium oxide power device.

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