Formula of high-emissivity resistance heating biological wave emitting chip and manufacturing method of high-emissivity resistance heating biological wave emitting chip

By using silicon carbide substrate and nanomaterial composite sintering in the biowave chip to form a high-intensity emission layer, the problem of low emissivity of the existing resistance heat-emitting sheet is solved, efficient biowave emission is achieved, and the treatment effect is improved.

CN119280683APending Publication Date: 2025-01-10苏州交鑫智能科技有限公司
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Patent Information

Application Number
CN202411280982.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-09-13
Publication Date
2025-01-10

AI Technical Summary

Technical Problem

The existing resistance heat-emitting sheets have few biological peaks and low emissivity, resulting in poor or ineffective treatment effects, and a new chip structure and function is needed.

Method used

Using silicon carbide substrate as support plate, the high-strength, high-thermal conductivity first and second emission layers are formed by composite sintering of nano-lanthanum hexaboride, nanographite, black vanadium titanium powder, nanoceramic powder, titanium chromium yellow and adhesive. , and combine the aluminum bar layer and the colloid protective layer to form a high emissivity biowave chip.

Benefits of technology

It achieves high emissivity, has high intensity, high thermal conductivity, high vacuum adaptability, low thermal expansion coefficient, excellent thermal shock and anti-oxidation properties, and improves the therapeutic effect.

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Abstract

The invention discloses a formula and a manufacturing method of a high-emissivity resistance heating biological wave emitting chip, the high-emissivity resistance heating biological wave emitting chip comprises a supporting plate, a first emitting layer is fixedly compounded on the surface of one side of the supporting plate, and a second emitting layer is fixedly compounded on the surface of one side of the first emitting layer. Aluminum strip layers are fixedly connected to the outer side faces of the first emission layer and the second emission layer, a colloid protection layer is fixedly compounded on the surface of one side of the second emission layer, the colloid protection layer is fixedly connected to the outer surface of the aluminum strip layer, a positioning groove is formed in the surface of the other side of the supporting plate, a through hole is formed in the positioning groove, and a through hole is formed in the through hole. The through holes are aligned to the surface of the back of the first emission layer, a heating plate is fixedly connected to the interior of the positioning groove, the high-strength, high-heat-conductivity, high-vacuum adaptability, high elastic modulus, low thermal expansion coefficient, excellent thermal shock resistance, corrosion resistance and oxidation resistance and the like are achieved, the high emissivity is achieved, and machining and using are facilitated.
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