Ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit

Abstract

The invention discloses an ultra-wideband reconfigurable injection-locking multi-mode single-ended input / output frequency divider circuit, which comprises an input unit, a frequency dividing circuit connected with the input unit and an output unit connected with the frequency dividing circuit, and is characterized in that the frequency dividing circuit comprises an injection-locking two-half frequency dividing circuit and an injection-locking three-half frequency dividing circuit; the input unit uses a Balun structure circuit to enable the injection locking frequency-halving circuit and the injection locking frequency-tripling circuit to be the same single-end input, and the output unit uses a Multi-tank resonance network structure to realize single-end output of two frequency-tripling and frequency-tripling modes. In the design of the broadband millimeter wave phase-locked loop chip, better efficacy and ultra-wideband performance can be realized, the cost is lower, and the integration is easy.

Description

Technical Field

[0001] The present invention relates to the technical field of frequency divider circuits, and in particular to an ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit, specifically a frequency divider link capable of mode switching, having both two-frequency division and three-frequency division modes, being reconfigurable, ultra-wideband, single-ended input / output, and low power consumption. Background Art

[0002] Millimeter-wave wireless communications and radars are research hotspots in academia and industry, and the millimeter-wave phase-locked loop system is a crucial component, and its performance directly affects the overall performance of the millimeter-wave system. With the development of wireless communication and radar application scenarios, the working bandwidth of the millimeter-wave phase-locked loop system is required to continue to increase while the power loss and chip area are further reduced. Among them, the voltage-controlled oscillator and the prescaler are two key modules in the phase-locked loop system, which contribute most of the power loss and chip area, and jointly determine the bandwidth of the phase-locked loop system.

[0003] In the millimeter-wave phase-locked loop system, the reference signal frequency provided by the crystal oscillator is usually low, and the oscillator output signal frequency needs to be divided to be comparable to the reference frequency, so that the millimeter-wave phase-locked loop can be locked. The first-stage divider following the oscillator is usually called a pre-divider. As the first-stage divider, the pre-divider has a relatively high operating frequency and requires a wide operating range to cover the operating frequency of the voltage-controlled oscillator. Therefore, it is very important to design a broadband, low-power millimeter-wave structure pre-divider.

[0004] In the millimeter wave frequency band, the injection locking structure based on the LC resonator is an excellent option as a pre-divider. This structure has a high operating frequency and the most outstanding phase noise performance among many types of dividers. In addition, due to the high-quality resonant cavity, the power loss of the divider is low, but this also limits the bandwidth. Therefore, the injection locking divider for millimeter wave applications needs to compromise between power consumption and locking range.

[0005] With the development of technology, an injection-locked divider based on a multi-order transformer structure has been proposed. It achieves bandwidth expansion by coupling multiple LC resonant cavities. Although the bandwidth performance of the injection-locked divider is alleviated, its range is still limited, and this single-mode divider can only provide a fixed division ratio. Summary of the invention

[0006] The purpose of the present invention is to overcome the shortcomings and defects of the prior art and to provide an ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit. The broadband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit can solve the defect of the narrow locking range of the single-mode injection-locked frequency divider structure in the background technology, which not only improves the frequency division bandwidth while obtaining low power consumption performance, but also provides a more flexible frequency division mode for the system. The use of such a dual-mode injection-locked frequency divider in the design of a broadband millimeter-wave phase-locked loop chip can achieve better power efficiency, ultra-wideband performance, lower cost and easy integration.

[0007] An ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit comprises an input unit, a frequency divider circuit connected to the input unit, and an output unit connected to the frequency divider circuit, wherein the frequency divider circuit comprises an injection-locked two-frequency divider circuit and an injection-locked three-frequency divider circuit; the input unit utilizes a balun structure circuit to make the injection-locked two-frequency divider circuit and the injection-locked three-frequency divider circuit the same single-ended input, and the output unit utilizes a multi-tank resonant network structure to realize single-ended output in two / three-frequency modes.

[0008] Wherein, the balun structure circuit is a single-turn differential balun structure circuit.

[0009] The balun structure circuit is connected to two bias circuits, one is the bias circuit of the injection tube of the two-frequency division circuit, and the other is the bias circuit of the two differential injection tubes of the three-frequency division circuit.

[0010] The balun structure circuit consists of a differential inductor L 6 and a differential inductor L 7 Through the coupling coefficient k 4 The bias circuit of the injection tube of the two-way frequency divider circuit consists of port V bias4 and resistor R 2 The bias circuit of the two differential injection tubes of the three-frequency circuit is composed of port V bias3 and differential inductance L 7 Composition: Differential inductance L 6 One end is grounded and the other end is connected to a resistor R 2 One end, input port V in , the gate port V of the injection transistor of the injection-locked divide-by-two circuit inj_DIV2 , differential inductance L 7 The two ends of the differential injection transistor gate port V of the injection-locked three-way frequency division circuit are connected inj_DIV3- 、V inj_DIV3+ ,Port V bias3 and the differential inductance L 7 The center tap of the resistor R 2 The other end is connected to port Vbias4 .

[0011] The injection-locked frequency divider circuit includes a transistor M 1 and transistor M 2 The cross-coupled transistor composed of the transistor M as the injection tube Inj_DIV2 , by a differential capacitor C 1 and a differential inductor L 1 The resonant cavity composed of two peak inductors L 4 ; Transistor M inj_DIV2 The gate of the inj_DIV2 , the source and drain are each connected to a peak inductor L 4 One end of transistor M 1 and transistor M 2 The drain connection of a differential capacitor C 1 and the differential inductance L 1 Parallel, differential inductance L 1 The two ends of the two peak inductances L 4 One end of transistor M 1 and transistor M 2 The source of transistor M is connected to ground. 1 and transistor M 2 The gate and drain are cross-connected, and the differential inductance L 1 The center tap of the transistor M is connected to the tail current source of the injection locked divide-by-two circuit. 5 The drain of transistor M 5 The source is connected to V DD The gate is connected to the port V bias1 .

[0012] The injection-locked three-frequency dividing circuit includes a transistor M 3 and transistor M 4 The cross-coupled transistors are composed of two transistors M as differential injection transistors. inj_DIV3+ 、M inj_DIV3- , transistor M for current multiplexing reuse , a differential capacitor C 2 and a differential inductor L 2 The resonant cavity is connected in parallel, and the two peak inductors L 5 ; Two transistors M inj_DIV3+ 、M inj_DIV3- The source of transistor M reuse The gates of transistors M reuse The source of transistor M inj_DIV3- The drain, a peak inductance L 5 One end of transistor M 4 The drain of transistor M reuseThe transistor M inj_DIV3+ The drain of the other peak inductor L 5 One end of transistor M 3 The drain of transistor M inj_DIV3+ 、M inj_DIV3- The gates of the inj_DIV3+ 、V inj_DIV3- , two peak inductances L 5 The other end is connected to the differential inductor L 2 The two ends of transistor M are connected. 3 and transistor M 4 The source of transistor M is connected to ground. 3 and transistor M 4 The gate and drain of are cross-connected; the differential inductor L 2 The center tap of the transistor M is connected to the tail current source of the injection locked three-way frequency division circuit. 6 The drain of transistor M 6 The source is connected to V DD The gate is connected to the port V bias2 .

[0013] The Multi-tank resonant network structure includes an inductor L 3 , inductance L 3 One end is connected through a resistor R 1 Then ground it, and the other end is connected to the output port V out , through the output port V out , realizing single-ended output in two-way / three-way frequency modes.

[0014] Among them, the differential inductance L 1 The coupling coefficient k 1 With inductance L 3 Coupling, through the coupling coefficient k 3 and the differential inductance L 2 Coupling, inductance L 3 Through the coupling coefficient k 2 With inductance L 2 Coupling forms a third-order Multi-tank resonant network structure.

[0015] Among them, by controlling the bias voltage, the transistor M 5 and transistor M 6 The on / off state of the transistor; at the same time, one transistor is on and the other is off, thereby controlling the switching of the two / three frequency modes; from port V bias1 Input pass transistor M 5 The DC bias voltage at port V bias2 If the input voltage is 0V, the transistor M 5On, transistor M 6 When it is turned off, it is in two-way frequency division mode, otherwise it is in three-way frequency division mode.

[0016] The design steps of the ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit are as follows:

[0017] Determine the indicators of the designed millimeter wave frequency division circuit, including bandwidth, noise, power consumption, and chip area;

[0018] Determine the frequency division ratios used in the two modes according to the set indicators, divide the frequency division ranges of the two modes, debug the core circuits of the two modes according to the divided bandwidths, and determine the various parameters of the core circuits;

[0019] According to the core parameters of the two modes, the common output structure is debugged, the coefficients of the Multi-tank passive load are determined, and the preliminary schematic design is realized. The core and passive load parameters are optimized through multiple simulation iterations until the circuit meets the specified index parameters and the final schematic design is completed.

[0020] The layout of the Multi-tank resonant cavity structure is planned according to the chip area index and the device parameters of each resonant cavity. After the entire layout design is completed, the simulation is performed after parameter improvement. After multiple simulation iterations, the layout is optimized to complete the overall circuit design.

[0021] The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output divider circuit of the present invention has the advantages of wide working bandwidth, low power consumption, multi-mode switching, current multiplexing, single-ended input / output, etc., and is based on this circuit topology to solve key problems such as narrow bandwidth of injection-locked divider, low injection efficiency of three-way frequency link, high power consumption of pre-divider used in phase-locked loop system, and system integration, and ultimately realizes wide bandwidth performance, low power loss, and low phase noise of radio frequency millimeter wave frequency division link, and achieves the purpose of easy chip integration, low cost, and low power consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic diagram of an ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit of the present invention. DETAILED DESCRIPTION

[0023] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0024] See also Figure 1As shown, the ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit of the present invention includes an input unit, a frequency divider circuit composed of an injection-locked two-frequency divider circuit and an injection-locked three-frequency divider circuit, and an output unit. The input unit uses a balun structure to make the injection-locked two-frequency divider circuit and the injection-locked three-frequency divider circuit the same single-ended input, and the output unit uses a Multi-tank resonant network structure to achieve single-ended output in two / three-frequency modes. The Multi-tank resonant network structure can not only expand the bandwidth of each core through a multi-order transformer, but also achieve the best output matching of the output signal through the selection of appropriate passive inductance and coupling coefficient.

[0025] In the present invention, the injection-locked two-way frequency division circuit and the injection-locked three-way frequency division circuit of the frequency division circuit both adopt an injection-locked structure, including a pair of cross-coupled tubes, an injection tube, a peak inductor structure, and a passive matching network. In addition, the injection-locked three-way frequency division structure also introduces a current multiplexing structure to improve the three-way frequency division injection efficiency, which is convenient for matching the output signal power in the two modes of / three-way frequency division. In addition, each frequency division circuit adds a transistor as a tail current source, and the switching of the two modes is controlled by the tail current source bias voltage.

[0026] Specifically, the input unit includes two bias circuits and a single-turn differential balun structure circuit, such as Figure 1 As shown in the circuit on the left, the two bias circuits include a bias circuit for the injection tube of the two-way frequency division circuit and a bias circuit for the injection tube of the three-way frequency division circuit.

[0027] Among them, the bias circuit of the binary frequency divider injection tube is composed of port V bias4 and resistor R 2 The bias circuit of the two differential injection tubes of the three-frequency circuit is composed of port V bias3 and differential inductance L 7 The single-turn differential balun structure consists of two differential inductors L 6 and two differential inductors L 7 Through the coupling coefficient k 4 The input port V in Two branches are connected in total, one branch is directly connected to the gate port V of the injection transistor of the injection-locked binary divider circuit. inj_DIV2 The other branch is connected to the gate ports V of the two differential injection transistors of the three-way frequency division circuit through a single-turn differential balun structure. inj_DIV3+ and V inj_DIV3+ , thus realizing single-ended input in two / three frequency modes.

[0028] The frequency division circuit of the present invention is as follows Figure 1As shown in the circuit diagram on the right, the upper side is an injection-locked two-way frequency division circuit, the lower side is an injection-locked three-way frequency division circuit, and the middle is an output matching structure; transistor M 5 and transistor M 6 They are the tail current sources of the injection-locked two-way frequency division circuit and the injection-locked three-way frequency division circuit, and are used as switches for switching between two modes: by controlling the current from port V bias1 and port V bias2 The bias voltage is used to control the transistor M 5 and transistor M 6 At the same time, only one transistor is in the on state and the other is in the off state, thereby controlling the switching of the two / three frequency modes. bias1 Input pass transistor M 5 The DC bias voltage at port V bias2 If the input voltage is 0V, the transistor M 5 On, transistor M 6 Turn off, it is in two-way frequency mode, otherwise it is in three-way frequency mode.

[0029] like Figure 1 As shown on the right, in the divide-by-two mode, the injection locked divide-by-two circuit includes transistor M 1 and transistor M 2 The cross-coupled transistor composed of the transistor M as the injection tube inj_DIV2 , peak inductance L 4 , transistor M as tail current source 5 , by the differential capacitor C 1 and differential inductance L 1 The resonant cavity composed of the differential capacitance C 1 and differential inductance L 1 The resonant cavities composed of 1 The inductance L of the output unit 3 Coupling, through the coupling coefficient k 3 Differential inductance L of injection-locked three-way frequency divider circuit 2 The coupling forms a third-order Multi-tank resonant network structure.

[0030] Among them, the cross-coupled tube M 1 and M 2 The negative resistance is provided for the injection-locked two-way frequency divider to ensure that the circuit maintains oscillation when no millimeter-wave injection signal is added, and that it operates near the operating frequency after the frequency divider is divided by two; the transistor M inj_DIV2 As an injection tube, it has a mixing effect and injects a frequency inj_DIV2 The gate port V inj_DIV2 The millimeter wave signal is injected, and the transistor M inj_DIV2The input signals of the source and drain of the circuit are the oscillation signals generated by the circuit itself. The two signals pass through the transistor M as the injection tube. inj_DIV2 The mixing effect and injection locking structure are used to accurately output the signal after the two-way frequency division, and then input it to the Multi-tank resonant network; the output matching circuit has three resonant cavities: the inductor L directly connected to the injection locking two-way frequency division circuit 1 and capacitor C 1 The first resonant cavity formed by the output port V out The connected inductor L 3 The second resonant cavity, inductor L 2 and capacitor C 2 The third resonant cavity is composed of the sum of the equivalent total capacitance of all parasitic capacitances of the injection-locked three-way frequency division circuit in the off state.

[0031] The first resonant cavity is coupled with the second and third resonant cavities through coupling coefficients k1 and k3, respectively, to form a third-order Multi-tank resonant network structure, and the peak inductance L is used. 4 The output passive load achieves high impedance gain, both of which effectively increase the bandwidth in the two-way mode.

[0032] like Figure 1 As shown on the right, in the three-way frequency division mode, the injection locked three-way frequency division circuit includes transistor M 3 and transistor M 4 The cross-coupled transistors are composed of two transistors M as differential injection transistors. inj_DIV3+ 、M inj_DIV3- , transistor M for current multiplexing reuse , peak inductance L 5 , transistor M as tail current source 6 , by the differential capacitor C 2 and differential inductance L 2 To form a resonant cavity; differential capacitance C 2 and differential inductance L 2 The resonant cavities composed of 2 With inductance L 3 Coupling, through the coupling coefficient k 3 and the differential inductance L 1 The coupling forms a third-order Multi-tank resonant network structure.

[0033] Among them, the cross-coupled tube M 3 and M 4 The negative resistance is provided for the injection-locked three-frequency divider circuit to ensure that the circuit maintains oscillation and operates near the operating frequency after the three-frequency divider is added when no fully differential millimeter-wave injection signal is added; the two transistors M inj_DIV3+ 、Minj_DIV3- As a differential injection tube, it has a mixing function and sends a signal to transistor M inj_DIV3+ 、M inj_DIV3- The gate port V inj_DIV3+ and V inj_DIV3- At the same time, a fully differential millimeter wave signal is injected, and the transistor M inj_DIV3+ 、M inj_DIV3- The drain input signal is the oscillation signal generated by the circuit itself. The two signals are injected into the transistor M through two differential inj_DIV3+ 、M inj_DIV3- The mixing effect is achieved by using the injection locking structure to accurately obtain the three-frequency divided signal, which is then input into the Multi-tank resonant network.

[0034] In the present invention, when working in the three-way frequency division mode, in addition to the path of the frequency-divided signal generated above, the present design also takes into account the difference in injection efficiency between the two-way frequency division and the three-way frequency division, and therefore introduces a current multiplexing structure into the injection-locked three-way frequency division core to improve the injection efficiency in the three-way frequency division mode, thereby achieving a good matching effect of the output signal power in the two modes. Specifically, in the two differential transistors M inj_DIV3+ 、M inj_DIV3- A current multiplexing transistor M is connected to the common mode point CM of reuse gate, when both gate ports V inj_DIV3+ and V inj_DIV3- When a fully differential millimeter wave signal is injected at the same time, the common mode point CM will output a three-frequency signal of twice the frequency, and then recycle this signal and introduce it into the transistor M reuse The gate port forms a two-way frequency injection structure. The specific mixing principle is the same as that in the two-way frequency mode, thereby achieving the effect of current multiplexing.

[0035] When working in the three-way frequency division mode, the output matching circuit has three resonant cavities: the inductor L directly connected to the injection-locked three-way frequency division circuit 2 and capacitor C 2 The first resonant cavity formed by the output port V out The connected inductor L 3 The second resonant cavity, inductor L 1 and capacitor C 1 The third resonant cavity is formed by the sum of the equivalent total capacitance of all parasitic capacitances of the injection-locked two-way frequency divider circuit in the off state.

[0036] Among them, the first resonant cavity is respectively connected through the coupling coefficient k 2 and k 3 The second and third resonant cavities are coupled to form a third-order Multi-tank resonant network structure, and the peak inductance L 5Achieve high impedance gain output passive load, effectively improving the bandwidth in three-way frequency mode.

[0037] The output signals in the two / three frequency modes of the present invention are both transmitted through the inductor L in the Multi-tank resonant network structure. 3 The resonant cavity is connected to the output port V out , thereby outputting frequency-divided signals in different modes.

[0038] The circuit of the present invention can be implemented in almost all millimeter wave integrated circuit processes, has a single input / output structure, and has the characteristics of flexible frequency division mode, ultra-wideband, and low loss, and is very convenient to be integrated into a radio frequency millimeter wave circuit.

[0039] The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit proposed by the present invention mainly includes the following steps:

[0040] (1) Determine the indicators of the designed millimeter-wave frequency division circuit, including bandwidth, noise, power consumption, and chip area.

[0041] (2) Determine the frequency division ratios used in the two modes based on the set indicators, divide the frequency division ranges of the two modes, debug the core circuits of the two modes respectively according to the divided bandwidths, and determine the various parameters of the core circuits.

[0042] (3) According to the core parameters of the two modes, the common output structure is debugged, the coefficients of the multi-tank passive load are determined, and the preliminary schematic design is realized. After multiple simulation iterations, the core and passive load parameters are optimized until the circuit meets the specified index parameters and the final schematic design is completed.

[0043] (4) Plan the layout of the Multi-tank resonant cavity structure based on the chip area index and the device parameters of each resonant cavity. After completing the entire layout design, perform post-parameter simulation. After multiple post-simulation iterations, optimize the layout and complete the overall circuit design.

[0044] The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit proposed by the present invention can realize mode switching by controlling the tail current source mode, so that the chip can be miniaturized and easier to integrate.

[0045] The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output divider circuit proposed in the present invention uses a Multi-tank resonant network structure as an output matching network and introduces a peak inductor to achieve a high impedance gain passive load design, which can not only greatly improve the divider bandwidth, but also effectively reduce the power loss of the divider to achieve a high-performance millimeter-wave phase-locked loop system.

[0046] The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit proposed in the present invention realizes single-ended input / output through a balun structure and a multi-tank resonant network structure, making the frequency divider easier to integrate into a millimeter-wave phase-locked loop system and convenient for testing.

[0047] The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit proposed in the present invention uses a third-order Multi-tank resonant network as output matching for two core circuits, namely, an injection-locked two-way frequency divider circuit and an injection-locked three-way frequency divider circuit, thereby reducing the area of ​​the dual-mode frequency divider and providing a flexible frequency division mode. In addition, the core structure can be flexibly replaced and can be designed as a two-way / four-way frequency division mode according to the needs of the scene application, making the use more targeted and adaptable.

[0048] The basic principles and main features of the present invention and the advantages of the present invention are shown and described above. It is obvious to those skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and the present invention can be implemented in other specific forms without departing from the spirit or basic features of the present invention.

[0049] Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is therefore intended that all changes falling within the meaning and range of equivalent elements of the claims are included in the present invention.

[0050] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. An ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit, characterized in that: It includes an input unit, a frequency division circuit connected to the input unit, and an output unit connected to the frequency division circuit, wherein the frequency division circuit includes an injection-locked two-frequency division circuit and an injection-locked three-frequency division circuit; the input unit uses a balun structure circuit to make the injection-locked two-frequency division circuit and the injection-locked three-frequency division circuit have the same single-ended input, and the output unit uses a multi-tank resonant network structure to realize single-ended output in two / three-frequency division modes.

2. The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit according to claim 1, characterized in that: The balun structure circuit is a single-turn differential balun structure circuit.

3. The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit according to claim 2, characterized in that: The balun structure circuit is connected to two bias circuits, one is the bias circuit of the injection tube of the two-frequency division circuit, and the other is the bias circuit of the two differential injection tubes of the three-frequency division circuit.

4. The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit according to claim 3, characterized in that: The balun structure circuit is composed of a differential inductor L6 and a differential inductor L7 coupled by a coupling coefficient k4. The bias circuit of the injection tube of the two-frequency dividing circuit is composed of port V bias4 and resistor R2, the bias circuit of the two differential injection tubes of the three-frequency circuit is composed of port V bias3 and differential inductor L7; one end of the differential inductor L6 is grounded, and the other end is connected to one end of the resistor R2 and the input port V in , the gate port V of the injection transistor of the injection-locked divide-by-two circuit inj_DIV2 The two ends of the differential inductor L7 are connected to the gate port V of the differential injection transistor of the injection-locked three-way frequency division circuit. inj_DIV3- 、V inj_DIV3+ , the center tap of the differential inductor L7 is connected to port V bias3 .

5. The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit according to claim 4, characterized in that: The injection-locked binary frequency divider circuit includes a cross-coupled transistor composed of a transistor M1 and a transistor M2, a transistor M1 as an injection transistor, and a Inj_DIV2 , a resonant cavity consisting of a differential capacitor C1 and a differential inductor L1, two peak inductors L4; transistor M inj_DIV2 The gate of the inj_DIV2 , the source and drain are respectively connected to one end of a peak inductor L4, the drains of transistors M1 and M2, a differential capacitor C1 is connected in parallel with the differential inductor L1, the two ends of the differential inductor L1 are respectively connected to one end of the two peak inductors L4, the sources of transistors M1 and M2 are connected and then grounded, the gates and drains of transistors M1 and M2 are cross-connected, the center tap of the differential inductor L1 is connected to the drain of transistor M5 as the tail current source of the injection-locked binary divider circuit, and the source of transistor M5 is connected to V DD The gate is connected to the port V bias1 .

6. The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit according to claim 5, characterized in that: The injection-locked three-frequency circuit includes a cross-coupled transistor composed of a transistor M3 and a transistor M4, two transistors M4 as differential injection transistors, and a inj_DIV3+ 、M inj_DIV3- , transistor M for current multiplexing reuse , a differential capacitor C2 and a differential inductor L2 connected in parallel to form a resonant cavity, two peak inductors L5; two transistors M inj_DIV3+ 、M inj_DIV3- The source of transistor M reuse The gates of transistors M reuse The source of transistor M inj_DIV3- The drain of the transistor M4 is connected to one end of the peak inductor L5 and the drain of the transistor M5. reuse The drain of transistor M inj_DIV3+ The drain of the transistor M3 is connected to one end of the other peak inductor L5 and the drain of the transistor M4. inj_DIV3+ 、M inj_DIV3- The gates of the inj_DIV3+ 、V inj_DIV3- , the other ends of the two peak inductors L5 are connected to the two ends of the differential inductor L2 respectively, the sources of the transistors M3 and M4 are connected and then grounded, and the gates and drains of the transistors M3 and M4 are cross-connected; the center tap of the differential inductor L2 is connected to the drain of the transistor M6 which is the tail current source of the injection-locked three-frequency circuit, and the source of the transistor M6 is connected to V DD The gate is connected to the port V bias2 .

7. The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit according to claim 6, characterized in that: The multi-tank resonant network structure includes an inductor L3, one end of which is connected to the ground through a resistor R1, and the other end is connected to the output port V out , through the output port V out , realizing single-ended output in two-way / three-way frequency modes.

8. The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit according to claim 7, characterized in that: The differential inductor L1 is coupled with the inductor L3 through the coupling coefficient k1 and coupled with the differential inductor L2 through the coupling coefficient k3. The inductor L3 is coupled with the inductor L2 through the coupling coefficient k2, forming a third-order Multi-tank resonant network structure.

9. The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit according to claim 6, characterized in that: The on / off state of transistors M5 and M6 is controlled by controlling the bias voltage; at the same time, one transistor is on and the other is off, thereby controlling the switching of the two / three frequency modes; from port V bias1 Input DC bias voltage of transistor M5, port V bias2 If 0V voltage is input, transistor M5 is turned on and transistor M6 is turned off. At this time, it is a two-frequency division mode, otherwise it is a three-frequency division mode.

10. The ultra-wideband reconfigurable injection-locked multi-mode single-ended input / output frequency divider circuit according to claim 1, characterized in that: The design steps are as follows: Determine the indicators of the designed millimeter wave frequency division circuit, including bandwidth, noise, power consumption, and chip area; Determine the frequency division ratios used in the two modes according to the set indicators, divide the frequency division ranges of the two modes, debug the core circuits of the two modes respectively according to the divided bandwidths, and determine the various parameters of the core circuits; According to the core parameters of the two modes, the common output structure is debugged, the coefficients of the Multi-tank passive load are determined, and the preliminary schematic design is realized. The core and passive load parameters are optimized through multiple simulation iterations until the circuit meets the specified index parameters and the final schematic design is completed. The layout of the Multi-tank resonant cavity structure is planned according to the chip area index and the device parameters of each resonant cavity. After the entire layout design is completed, the simulation is performed after parameter improvement. After multiple simulation iterations, the layout is optimized to complete the overall circuit design.

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