Semiconductive compound composition and preparation method thereof

Abstract

The invention relates to a semiconductive compound composition and a preparation method thereof. In particular to a semiconductive compound composition and a preparation method thereof, the semiconductive compound composition comprises a base resin and carbon black, the base resin is formed by mixing two ethylene butyl acrylate resins with same non-melting indexes, and the volume of the carbon black in the semiconductive compound composition accounts for more than 60% of the volume of the total composition.

Description

Technical Field

[0001] The present invention relates to a semiconductive compound composition and a preparation method thereof, and more particularly to a semiconductive compound composition for high-voltage power cables and a preparation method thereof, which has excellent processing properties and low volume resistance even at high temperatures. Background Art

[0002] Generally, a power cable is composed of a conductor part made of metal such as aluminum or copper, and the conductor is covered by an inner semiconductive layer that covers the conductor and then covered by an insulating layer. Then, in order to protect the outer semiconductive layer and the cable itself, an external layer is arranged on the outer side of the outer semiconductive layer, and its structure can be changed as needed.

[0003] The purpose of using the semiconductive layer is to prevent insulation damage and shortened power cable life caused by deterioration of the insulation layer by making the local electric field radially uniform, since a high voltage may be applied to the insulation layer due to electric field distortion between the conductor and the neutral wire.

[0004] The semiconductive layer is prepared by mixing ethylene resins such as ethylene vinyl acetate (EVA) resin and ethylene butyl acrylate (EBA) with carbon black, a crosslinking agent and a common crosslinking agent in an amount sufficient to make it semiconductive in order to faithfully play its original role when constituting a power cable.

[0005] The volume resistance of the semiconductive layer increases with increasing temperature, which means that the conductive network of the semiconductive material is destroyed at high temperature, thereby inhibiting the flow of electrons, thereby increasing the volume resistance value.

[0006] In order to reduce the volume resistance value as much as possible, the content of conductive substances such as carbon black may be increased, but the processing performance or mechanical strength may be reduced accordingly.

[0007] In order to improve the processability, different types of polymer resins may be mixed with each other or an additional cross-linking agent may be added, but this may reduce miscibility or increase volume resistance.

[0008] Therefore, in the related technical field, there is an urgent need to develop a semiconductive compound composition for forming a semiconductive layer having excellent processability and mechanical strength while having low volume resistance even at high temperatures. Summary of the invention

[0009] Problem that the invention aims to solve

[0010] The present invention aims to provide a semiconductive compound composition having low volume resistance even at high temperatures and having excellent processing stability.

[0011] Furthermore, the present invention aims to provide a semiconductive compound composition having excellent oxidation stability even at high temperatures.

[0012] Means used to solve problems

[0013] The present invention provides a semiconductive compound composition, which comprises: a base resin, which is a mixture of two ethylene butyl acrylate resins having different melt indexes, and carbon black; the content of the carbon black satisfies the following formula 1:

[0014] Formula 1

[0015]

[0016] (M1: weight of carbon black, M2: weight of base resin, d1: specific gravity of carbon black, d2: specific gravity of base resin).

[0017] According to an aspect of the present invention, the melt index may satisfy the following Formula 2 to Formula 3.

[0018] Formula 2

[0019] 1≤MI1≤10

[0020] Formula 3

[0021] 11≤MI1≤30

[0022] (The MI1 is the melt index of the first ethylene butyl acrylate resin, and the MI2 is the melt index of the second ethylene butyl acrylate resin. The melt index is measured according to the ASTM D1238 measurement method at 125°C and 2.16 kg. The unit of the melt index is g / 10min.)

[0023] According to an aspect of the present invention, in the base resin, Ml1 of the first ethylene butyl acrylate resin may be 5 to 10 g / 10 min, and Ml2 of the second ethylene butyl acrylate resin may be 15 to 25 g / 10 min.

[0024] According to an aspect of the present invention, the Ml1 value and the Ml2 value of the base resin may satisfy the following Formula 4.

[0025] Formula 4

[0026] 10≤MI2-MI1≤20

[0027] (The MI1 is the melt index (g / 10 min) of the first ethylene butyl acrylate resin measured at 125° C. and 2.16 kg according to the ASTM D1238 measurement method, and the MI2 is the melt index (g / 10 min) of the second ethylene butyl acrylate resin measured according to the same measurement method as above.)

[0028] According to one aspect of the present invention, in the base resin, the first ethylene butyl acrylate resin may be an ethylene butyl acrylate resin having a structural unit content derived from butyl acrylate monomer of 15 to 18 mol % and Ml1 of 5 to 10 g / 10 min, and the second ethylene butyl acrylate resin may be an ethylene butyl acrylate resin having a structural unit content derived from butyl acrylate monomer of 19 to 22 mol % and Ml2 of 17 to 22 g / 10 min.

[0029] According to an aspect of the present invention, 30 to 100 parts by weight of carbon black may be included relative to 100 parts by weight of the base resin.

[0030] According to an aspect of the present invention, the semiconductive compound composition may further include an antioxidant and a crosslinking agent.

[0031] According to an aspect of the present invention, 30 to 100 parts by weight of carbon black, 0.01 to 5 parts by weight of an antioxidant, and 0.1 to 10 parts by weight of a cross-linking agent may be included relative to 100 parts by weight of the base resin.

[0032] According to one aspect of the present invention, the semiconductive compound composition may further include a metal stearate.

[0033] According to one aspect of the present invention, the metal stearate may include one or a combination of two or more selected from the group consisting of zinc stearate, calcium stearate, aluminum stearate and magnesium stearate.

[0034] According to one aspect of the present invention, there is provided a semiconductive resin cured product obtained by crosslinking the above-mentioned semiconductive compound composition.

[0035] According to an aspect of the present invention, the semiconductive resin cured product may have a volume resistance of 330 Ω·cm or less at 135° C. according to ASTM D991.

[0036] The present invention can provide a method for preparing a semiconductive resin cured product, which comprises: step a, adding the base resin, carbon black and antioxidant into a first kneader, kneading and pulverizing to prepare masterbatch particles, step b, mixing the masterbatch particles and a crosslinking agent so that the crosslinking agent is impregnated into the masterbatch particles to prepare a semiconductive compound composition, and step c, homogenizing the semiconductive compound composition to provide a semiconductive resin cured product; and in the semiconductive compound composition, the content of the carbon black satisfies the following formula 1:

[0037] Formula 1

[0038]

[0039] (M1: weight of carbon black, M2: weight of base resin, d1: specific gravity of carbon black, d2: specific gravity of base resin).

[0040] According to an aspect of the present invention, 30 to 100 parts by weight of carbon black, 0.01 to 5 parts by weight of an antioxidant, and 0.1 to 10 parts by weight of a cross-linking agent may be included relative to 100 parts by weight of the base resin.

[0041] Effects of the Invention

[0042] The semiconductive resin cured product prepared from the semiconductive compound composition of the present invention has a volume resistivity of 200Ω or less, 180Ω or less, 160Ω or less, and more preferably 150Ω or less even under high temperature conditions, such as 90°C, and has a long scorch time, so it is also excellent in processability and surface smoothness.

[0043] Furthermore, the semiconductive compound cured product of the present invention has excellent oxidation stability even at high temperatures, and thus has excellent durability even when used for a long time, and has the advantage of being able to maintain low volume resistance. DETAILED DESCRIPTION

[0044] The present invention is further described in detail below by specific examples or embodiments. However, the following specific examples or embodiments are only references for describing the present invention in detail, and the present invention is not limited thereto and can be implemented in various forms.

[0045] In addition, unless otherwise defined, all technical terms and scientific terms have the same meaning as commonly understood by ordinary technicians in the field to which the present invention belongs. The terms used for explanation in the present invention are only for effectively describing specific embodiments and are not intended to limit the present invention.

[0046] In addition, unless the context specifically indicates otherwise, singular quantity forms used in the specification and the appended patent claims are intended to include plural quantity forms as well.

[0047] Furthermore, when a part “includes” a certain constituent element, unless there is a special description to the contrary, it means that other constituent elements may also be included, rather than excluding other constituent elements.

[0048] The semiconductive layer included in the high voltage cable needs to have low volume resistance and excellent processing performance. The semiconductive layer is prepared by mixing a polymer resin and a conductive substance, and the physical properties of the semiconductive compound composition vary depending on the content of the conductive substance, so the optimal content needs to be controlled accordingly.

[0049] The present invention is a semiconductive compound composition, which comprises a base resin formed by mixing two ethylene butyl acrylate resins with different melt indexes and carbon black. The problem is solved by the volume of carbon black accounting for more than 60 volume % of the total volume of the semiconductive compound composition.

[0050] Specifically, the semiconductive compound composition comprising a base resin formed by mixing two ethylene butyl acrylate resins having different melt indexes and carbon black has excellent processing performance and low volume resistivity. In particular, when the volume of carbon black is 60 volume % or more relative to the total volume of the semiconductive compound composition, such as 61 volume % (vol %) to 70 volume %, it can have lower volume resistivity and excellent processing performance even at high temperatures, and has the advantage of excellent physical properties even if the content of crosslinking agent and antioxidant is reduced.

[0051] Specifically, a semiconductive compound composition is provided, the semiconductive compound composition comprising a base resin formed by mixing two ethylene butyl acrylate resins having different melt indexes and carbon black, and the content of the carbon black satisfies the following formula 1:

[0052] Formula 1

[0053]

[0054] (M1: weight of carbon black, M2: weight of base resin, d1: specific gravity of carbon black, d2: specific gravity of base resin).

[0055] As shown in Formula 1, the volume of carbon black in the total composition volume of the semiconductive compound may be 60% by volume or more, specifically, the volume of the carbon black may be 61 to 70% by volume, specifically, 62 to 68% by volume, but is not limited thereto. As the content of the carbon black in the semiconductive compound composition is satisfied, it may have lower volume resistance and excellent processing properties even at high temperatures, and even if the content of the crosslinking agent and the antioxidant is reduced, it has the advantage of excellent physical properties.

[0056] According to one aspect of the present invention, in the semiconductive compound composition, relative to 100 parts by weight of the base resin, 30 to 100 parts by weight of carbon black can be included, specifically, relative to 100 parts by weight of the base resin, 40 to 90 parts by weight of carbon black can be included, specifically, relative to 100 parts by weight of the base resin, 55 to 70 parts by weight of carbon black can be included, specifically, relative to 100 parts by weight of the base resin, 55 to 60 parts by weight of carbon black can be included, but is not limited to this.

[0057] According to one aspect of the present invention, the melt indexes of the two ethylene butyl acrylate resins having different melt indexes may satisfy the following Formulas 2 and 3.

[0058] Formula 2

[0059] 1≤MI1≤10

[0060] Formula 3

[0061] 11≤MI1≤30

[0062] The MI1 is the melt index of the first ethylene butyl acrylate resin, and the MI2 is the melt index of the second ethylene butyl acrylate resin. The melt index is measured according to the ASTM D1238 measurement method under the conditions of 125° C. and 2.16 kg, and the unit of the melt index is g / 10 min.

[0063] The first ethylene butyl acrylate resin having a melt index value satisfying the M11 range and the second ethylene butyl acrylate resin having a melt index value satisfying the M12 range are mixed to constitute a base resin contained in the semiconductive compound composition, so that the semiconductive compound composition exhibits more improved processing performance and has the advantage of excellent miscibility between the compositions. In addition, the inventors have found that the semiconductive compound composition containing the base resin has a significantly reduced volume resistance effect compared to a resin composed of one ethylene butyl acrylate or a mixture of two different polymer resins.

[0064] Furthermore, by using a base resin comprising a first ethylene butyl acrylate resin and a second ethylene butyl acrylate resin satisfying Formulae 2 to 3, it was first recognized that the volume resistance can be reduced without reducing the inherent processability and mechanical properties of the semiconductive compound composition, thereby completing the present invention.

[0065] Furthermore, according to an aspect of the present invention, in the case where the base resin has an Ml1 value satisfying 5 to 10 g / 10 min and an Ml2 value satisfying 15 to 25 g / 10 min, the volume resistance can be further reduced, and thus it is more preferred.

[0066] Furthermore, according to one aspect of the present invention, the Ml1 value and the Ml2 value of the base resin satisfy the following Formula 4, so that the volume resistance can be further reduced at high temperatures, and thus it is more preferred.

[0067] Formula 4

[0068] 10≤MI2-MI1≤20 According to one aspect of the present invention, a semiconductive compound composition can be provided, wherein the first ethylene butyl acrylate resin of the base resin can be an ethylene butyl acrylate resin having a structural unit content of 15 to 18 mol% derived from butyl acrylate monomer and a melt index of 5 to 10 g / 10 min, and the second ethylene butyl acrylate resin can be an ethylene butyl acrylate resin having a structural unit content of 19 to 22 mol% derived from butyl acrylate monomer and a melt index of 17 to 22 g / 10 min. When a base resin mixed with the above resins is used, it has a lower volume resistivity at high temperature and is therefore more preferred.

[0069] According to an aspect of the present invention, the semiconductive compound composition may further include an antioxidant and a crosslinking agent.

[0070] The semiconductive compound composition can maintain excellent volume resistance, processability and mechanical strength at high temperatures by including an antioxidant, while suppressing deterioration of the semiconductive compound composition for a long period of time after processing.

[0071] The antioxidant according to one aspect of the present invention may be any one or more selected from the group consisting of phenolic compounds and thioether compounds.

[0072] Specifically, the phenolic compound may include 2,2'-thiodiethylene-bis-(3,5-di-t-butyl-4-hydroxyphenyl) propionate, 4,4'-thiobis(2-t-butyl-5-methylphenol), 1,2-dihydro-2,2,4-trimethylquinoline, ,4-trimethylquinoline), diethyl((3,5-bis(1,1-dimethylethyl)-4-hydroxyphenyl)methyl)phosphonate, 1,3,4-tris(4-tert-butyl-3-hydroxy-2,6-xylene)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione xy-2,6-dimethylbenzene)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione), tetrakis[methylene-3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate]methane), octadecyl-3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate The invention can be selected from the group consisting of tris(2,4-di-tert-butylphenyl)phospite, tris(2,4-di-tert-butylphenyl)phospite, and N,N'-bis-(3-(3',5'-di-tert-butyl-4'-hydroxyphenyl)propionyl)hydrazine, or a combination of two or more thereof, but is not limited thereto.

[0073] In addition, the thioether compound may include dilaurylthiodipropionate, ditridecylthiodipropionate, dimyristylthiodipropionate, dioctadecyldisulfide, bis[2-methyl-4-(3-n-dodecylthiopropionyloxy)-5-tert-butylphenyl]Sulfide, pentaerythritol-tetrakis-(3-laurylthiopropionate), 1,4-cyclohexanedimethanol, 3,3'-thiobis propanoic acid dimethyl ester polymer, dimethyl esters polymer) and distearyl thiodipropionate (distearylthiodipropionate) and the like, or a combination of two or more thereof, but not limited thereto.

[0074] By using the antioxidant, the semiconductive resin composition is processed to improve the processability of the polymer, and also to prevent the oxidation of the polymer.

[0075] The semiconductive compound composition contains a crosslinking agent, and a crosslinked semiconductive layer can be formed by compression molding, injection molding, or extrusion molding the composition containing the crosslinking agent under high temperature conditions, such as at a high temperature of 180° C. or above, 200° C. or above. The method of impregnating and homogenizing the crosslinking agent is not particularly limited, but for example, the master batch and the crosslinking agent can be mixed, heated, and matured to achieve homogenization.

[0076] Suitable crosslinking agents that can be used include, for example, di(tert-butylperoxyisopropyl)benzene, 1,1-tert-butylperoxy-3,3,5-trimethylcyclohexane, n-butyl-4,4-(bis-butyl peroxy)valerate, dicumyl peroxide, tert-butylperoxide, 1,1-bis(tert-butylperoxy)-diisopropylbenze, benzoyl peroxide, 2,5-dimethyl-2,5-di-tert-butylperoxy The present invention may include one or more of the group consisting of tert-butyl peroxide, tert-butylperoxybenzoate, di-tert-butyl peroxide and 2,5-dimethyl-2,5-di-tert-butylperoxyhexane, and specifically, may include one or more of the group consisting of tert-butyl peroxide, 1,1-tert-butylperoxy-3,3,5-trimethylcyclohexane, benzoyl peroxide and dicumyl peroxide, and specifically, may include dicumyl peroxide and perbutylperoxide, but is not limited thereto.

[0077] According to one aspect of the present invention, the semiconductive compound composition may contain 30 to 100 parts by weight of carbon black, 0.01 to 5 parts by weight of an antioxidant and 0.1 to 10 parts by weight of a crosslinking agent, specifically, 40 to 90 parts by weight of carbon black, 0.1 to 3 parts by weight of an antioxidant and 0.3 to 5 parts by weight of a crosslinking agent, relative to 100 parts by weight of the base resin, specifically, 55 to 70 parts by weight of carbon black, 0.2 to 1 parts by weight of an antioxidant and 0.5 to 3 parts by weight of a crosslinking agent, relative to 100 parts by weight of the base resin, but is not limited thereto.

[0078] When the composition content of the semiconductive composition satisfies the above range, the crosslinking time and the degree of crosslinking can be appropriately set, thereby providing a semiconductive composition which not only has excellent processability and mechanical strength but also does not deteriorate even after long-term use and has excellent volume resistance.

[0079] In addition, according to one aspect of the present invention, the semiconductive composition may include a metal stearate compound or the like, specifically, may include one or a combination of two or more selected from the group consisting of zinc stearate, calcium stearate, aluminum stearate and magnesium stearate, specifically, may include calcium stearate and / or zinc stearate, specifically, may include zinc stearate, but is not limited thereto.

[0080] By further including the metal stearate, the sloughing phenomenon of the polymer can be minimized. The semiconductive layer according to an embodiment of the present invention prepared according to the content of the metal stearate does not generate protrusions on its surface and can provide excellent surface properties. In addition, by further including the metal stearate, the fluidity of the semiconductive resin composition can be improved, thereby minimizing the conductivity deviation caused by stretching when it is molded.

[0081] In addition, according to one aspect of the present invention, the semiconductive resin composition may further include a processing aid. The processing aid may include one or more combinations selected from the group consisting of montan wax, fatty acid ester, triglyceride or partial esters thereof, glycerin ester, polyethylene wax, paraffin wax, metal soap-based lubricant, amide lubricant, etc., specifically, fatty acid ester, triglyceride or partial esters thereof and polyethylene wax, but is not limited thereto.

[0082] By further including the processing aid, the effect of improving the contact between the semiconductive resin composition and the conductor and reducing the extrusion load can be achieved. The semiconductive resin cured product can be prepared by crosslinking the semiconductive resin composition according to one aspect of the present invention. The crosslinked semiconductive resin cured product has excellent processing performance and mechanical strength, and has excellent volume resistance even at high temperatures, so that it is suitable for use as a semiconductive layer of an ultra-high voltage cable wire.

[0083] The mechanical properties and volume resistivity of the semiconductive resin cured product may vary depending on the degree of crosslinking, and the degree of crosslinking may be determined by the crosslinking density.

[0084] According to one aspect of the present invention, the volume resistivity of the semiconductive resin cured product according to ASTM D991 at 90° C. may be 300 Ω·cm or less, specifically 160 Ω·cm or less, specifically 150 Ω·cm or less, but is not limited thereto.

[0085] In addition, the volume resistivity of the semiconductive resin cured product according to ASTM D991 at 110° C. may be 340 Ω·cm or less, specifically 300 Ω·cm or less, specifically 250 Ω·cm or less, but is not limited thereto.

[0086] In addition, the volume resistivity of the semiconductive resin cured product according to ASTM D991 at 135° C. may be 330 Ω·cm or less, specifically 300 Ω·cm or less, specifically 250 Ω·cm or less, but is not limited thereto.

[0087] In addition, the elongation of the semiconductive resin cured product according to ATSM D638 may be 180% or more, specifically 180% to 200%, specifically 185 to 195%, but is not limited thereto.

[0088] In addition, the tensile strength of the semiconductive resin cured product according to ATSM D638 may be 220 kgf / cm 2 Above, specifically 230 to 300 kgf / cm 2 , specifically 230 to 270 kgf / cm 2 , but not limited to this.

[0089] According to one aspect of the present invention, a method for preparing a semiconductive resin cured product can be provided, which comprises: step a, adding the base resin, carbon black and antioxidant into a first kneader, kneading and pulverizing to prepare master batch particles, step b, mixing the master batch particles and a crosslinking agent so that the crosslinking agent is impregnated into the master batch particles to prepare a semiconductive compound composition, and step c, homogenizing the semiconductive compound composition to provide a semiconductive resin cured product; and in the semiconductive compound composition, the content of the carbon black satisfies the following formula 1:

[0090] Formula 1

[0091]

[0092] (M1: weight of carbon black, M2: weight of base resin, d1: specific gravity of carbon black, d2: specific gravity of base resin).

[0093] The temperature of the first kneader in the step a may be 90 to 120° C., but is not limited thereto as long as it is a general purpose temperature. The kneader may be a Banbury mixer (dispersion type kneader), etc., but is not limited thereto as long as it is a general purpose device.

[0094] In the step a, for ease of processing, the composite resin kneaded in the kneader can be prepared in the form of masterbatch particles, and the masterbatch particles can be prepared by a roll mill and a crusher, but it is not limited thereto as long as it is a commonly used device.

[0095] The size of the master batch particles may be 2 to 10 mm, specifically, 3 to 8 mm, but is not limited thereto.

[0096] In the step b, a step of mixing the masterbatch particles and the crosslinking agent may be included, and the mixing method may use a German Brabender mixer, but is not limited thereto. The mixing conditions are kneading at a stirring speed of 30 to 60 rpm at 60 to 80° C., but this is not limited thereto. By mixing the masterbatch particles and the crosslinking agent, a semiconductive resin composition in which the crosslinking agent is impregnated into the masterbatch particles may be prepared.

[0097] The semiconductive resin composition prepared in step c may be homogenized, specifically, may be homogenized in an oven. The homogenization means that the crosslinking agent penetrates into the particles to homogenize the composition, thereby eliminating the deviation of physical properties caused by compression molding.

[0098] The oven temperature may be a temperature above the curing temperature of the curing agent, specifically, may be 60 to 100° C., and the crosslinking and aging time may be 10 minutes to 12 hours, but is not limited thereto.

[0099] In addition, according to one aspect of the present invention, the crosslinking time of step c is preferably more than 10 minutes, specifically, preferably more than 12 minutes, but not limited thereto. If the crosslinking time is too short, the processing stability of the semi-conductive cured product may be reduced during the cable processing.

[0100] The present invention will be described in further detail below based on Examples and Comparative Examples. However, the following Examples and Comparative Examples are only examples for describing the present invention in more detail, and the present invention is not limited to the following Examples and Comparative Examples.

[0101] Tensile strength and elongation

[0102] The tensile strength and elongation were measured according to ATSM D638 at 250 mm / min.

[0103] Scorch time

[0104] Scorch time is measured according to ASTM D6204.

[0105] Volume resistance

[0106] Volume resistivity is measured according to ASTM D991.

[0107] Melt index

[0108] The measurement was performed according to ASTM D1238 under the conditions of 125° C. and 2.16 kg, and the unit of the melt index is g / 10 min.

[0109] Example 1

[0110] With respect to 100 parts by weight of a base resin (a first ethylene butyl acrylate resin having a butyl acrylate content of 17 mol%, a concentration of 0.924 g / ml, and a melt index of 7.0 g / 10 min and a second ethylene butyl acrylate resin having a butyl acrylate content of 20 mol%, a concentration of 0.925 g / ml, and a melt index of 20.0 g / 10 min in the same weight ratio), 0.635 parts by weight of 1,2-dihydro-2,2,4-trimethylquinoline (Naugard SuperQ, Miwon Trading Co., Ltd., Korea) and 56.5 parts by weight of carbon black (420B, bulk density: 0.308 g / ml) were mixed, kneaded at 100° C. for 30 minutes using a roll mill, and then passed through a crusher to be crushed into particles of 2 to 4 mm in size. Then, the crushed particles and the crosslinking agent were added to a German Brabender mixer to impregnate the particles with the crosslinking agent and mature them, thereby preparing a semiconductive compound in which the crosslinking agent has been impregnated in the particles. In the Brabender internal mixer, 1.25 parts by weight of the crosslinking agent di(tert-butylperoxyisopropyl)benzene was added relative to 100 parts by weight of the base resin, and mixed at 75° C. and 40 rpm for 10 minutes to impregnate it, and then matured in an oven at 70° C. for 8 hours, thereby preparing semiconductive compound composition particles in which the crosslinking agent was uniformly impregnated.

[0111] The semiconductive compound particles were compression molded at 180° C. and 200 bar to prepare samples for property measurement, and the tensile strength, elongation and scorch time were measured and recorded in Table 1, and the volume resistivity was measured and recorded in Table 2.

[0112] Example 2

[0113] 55.36 parts by weight of carbon black (2700G, bulk density: 0.299 g / ml) are used instead of the carbon black (420B, bulk density: 0.308 g / ml) in Example 1. 0.63 parts by weight of 1,2-dihydro-2,2,4-trimethylquinoline (Naugard SuperQ, Miyuen Shoji) and 1.24 parts by weight of a crosslinking agent (Di[tert-butylperoxyisopropyl]benzene) (Perkadox 14s-FL, Akzo Nobel) are also used. Other conditions are the same as in Example 1.

[0114] The tensile strength, elongation and scorch time of the prepared semiconductive compound composition were measured and recorded in Table 1, and the volume resistance was measured and recorded in Table 2.

[0115] Example 3

[0116] 55.85 parts by weight of carbon black (XC500, Bulk Density: 0.314 g / ml) were used to replace the carbon black (420B, bulk density: 0.308 g / ml) in Example 1. 0.63 parts by weight of 1,2-dihydro-2,2,4-trimethylquinoline (Naugard SuperQ, Miyuen Shoji) and 2.49 parts by weight of a crosslinking agent (Di[tert-butylperoxyisopropyl]benzene) (Perkadox14s-FL, AkzoNobel) were also used. Other conditions were the same as in Example 1.

[0117] The tensile strength, elongation and scorch time of the prepared semiconductive compound composition were measured and recorded in Table 1, and the volume resistance was measured and recorded in Table 2.

[0118] Comparative Example 1

[0119] Except that 55.85 parts by weight of carbon black (XC500, bulk density: 0.347 g / ml) was used instead of the carbon black (XC500, bulk density: 0.314 g / ml) of Example 3, other conditions were the same as those of Example 3. The tensile strength, elongation and scorch time of the prepared semiconductive compound composition were measured and recorded in Table 1, and the volume resistivity was measured and recorded in Table 2.

[0120] Comparative Example 2

[0121] The conditions were the same as those in Example 1 except that 100 parts by weight of a single resin (a first ethylene butyl acrylate resin having a butyl acrylate content of 17 mol %, a concentration of 0.924 g / ml, and a melt index of 7.0 g / 10 min) was used as the base resin instead of the mixed base resin of Example 1 (a first ethylene butyl acrylate resin having a butyl acrylate content of 17 mol %, a concentration of 0.924 g / ml, and a melt index of 7.0 g / 10 min and a second ethylene butyl acrylate resin having a butyl acrylate content of 20 mol %, a concentration of 0.925 g / ml, and a melt index of 20.0 g / 10 min in the same weight ratio).

[0122] The tensile strength, elongation and scorch time of the prepared semiconductive compound composition were measured and recorded in Table 1, and the volume resistance was measured and recorded in Table 2.

[0123] Table 1

[0124]

[0125]

[0126] *The EBA1 is the first ethylene acrylate resin, and the EBA2 is the second ethylene acrylate resin.

[0127] Table 2

[0128]

[0129] As described above, the present invention is described through specific matters and limited embodiments and drawings, but this is only provided to help a more comprehensive understanding of the present invention. The present invention is not limited to the embodiments, and a person with general knowledge in the field to which the present invention belongs can make various modifications and deformations based on these records. Therefore, the idea of ​​the present invention is not limited to the described embodiments, and the scope of the patent claims described below and all contents equivalent to or equivalent to them should be deemed to fall within the scope of the present invention.

Claims

1. A semiconductive compound composition, characterized in that: The semiconductive compound composition comprises: A base resin, a blend of two ethylene butyl acrylate resins with different melt indices, and Carbon black; The content of the carbon black satisfies the following formula 1: Formula 1 Wherein, M1 is the weight of carbon black, M2 is the weight of base resin, d1 is the specific gravity of carbon black, and d2 is the specific gravity of base resin.

2. The semiconductive compound composition according to claim 1, characterized in that: The melt index satisfies the following formula 2 to formula 3: Formula 2 1≤MI1≤10 Formula 3 11≤MI1≤30 Wherein, the MI1 is the melt index of the first ethylene butyl acrylate resin, the MI2 is the melt index of the second ethylene butyl acrylate resin, the melt index is measured according to the ASTM D1238 measurement method at 125°C and 2.16kg, and the unit of the melt index is g / 10min.

3. The semiconductive compound composition according to claim 2, characterized in that: The M11 of the first ethylene butyl acrylate resin is 5 to 10 g / 10 min, The M12 of the second ethylene butyl acrylate resin is 15 to 25 g / 10m.

4. The semiconductive compound composition according to claim 2, characterized in that: The M11 value and M12 value of the base resin satisfy the following formula 4: Formula 4 10≤MI2-MI1≤20 Wherein, the MI1 is the melt index of the first ethylene butyl acrylate resin measured at 125° C. and 2.16 kg according to the ASTM D1238 measurement method, in units of g / 10 min, The MI2 is the melt index of the second ethylene butyl acrylate resin measured according to the same measurement method as above, and the unit is g / 10 min.

5. The semiconductive compound composition according to claim 4, characterized in that: In the base resin, The first ethylene butyl acrylate resin is an ethylene butyl acrylate resin having a structural unit content of 15 to 18 mol % derived from butyl acrylate monomer and an M1 of 5 to 10 g / 10 min, The second ethylene butyl acrylate resin is an ethylene butyl acrylate resin having a structural unit content derived from butyl acrylate monomer of 19 to 22 mol % and M12 of 17 to 22 g / 10 min.

6. The semiconductive compound composition according to claim 1, characterized in that: The carbon black is included in an amount of 30 to 100 parts by weight relative to 100 parts by weight of the base resin.

7. The semiconductive compound composition according to claim 1, characterized in that: The semiconductive compound composition further comprises an antioxidant and a crosslinking agent.

8. The semiconductive compound composition according to claim 7, characterized in that: The invention further comprises 30 to 100 parts by weight of carbon black, 0.01 to 5 parts by weight of an antioxidant, and 0.1 to 10 parts by weight of a cross-linking agent, relative to 100 parts by weight of the base resin.

9. The semiconductive compound composition according to claim 8, characterized in that: The semiconductive compound composition further comprises a metal stearate.

10. The semiconductive compound composition according to claim 9, characterized in that: The metal stearate includes one or a combination of two or more selected from the group consisting of zinc stearate, calcium stearate, aluminum stearate and magnesium stearate.

11. A semi-conductive resin cured product, characterized in that: Obtained by crosslinking the semiconductive compound composition according to any one of claims 1 to 10.

12. The semiconductive resin cured product according to claim 11, characterized in that The semiconductive resin cured product has a volume resistivity of 330 Ω·cm or less at 135° C. in accordance with ASTM D991.

13. A method for preparing a semi-conductive resin cured product, characterized in that: include: Step a, adding the base resin, carbon black and antioxidant into a first kneader, kneading and pulverizing to prepare masterbatch particles, Step b, mixing the master batch particles and a crosslinking agent so that the crosslinking agent is impregnated into the master batch particles to prepare a semiconductive compound composition, and Step c, homogenizing the semiconductive compound composition to provide a semiconductive resin cured product; The content of the carbon black satisfies the following formula 1: Formula 1 Wherein, M1 is the weight of carbon black, M2 is the weight of base resin, d1 is the specific gravity of carbon black, and d2 is the specific gravity of base resin.

14. The method for preparing a semiconductive resin cured product according to claim 13, characterized in that: The invention further comprises 30 to 100 parts by weight of carbon black, 0.01 to 5 parts by weight of an antioxidant, and 0.1 to 10 parts by weight of a cross-linking agent, relative to 100 parts by weight of the base resin.

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