Heterojunction cell dry method black silicon texturing process and equipment
Through dry black silicon velvet making process and equipment, the problems of resource consumption and sewage discharge in traditional wet velvet making process are solved, and a more environmentally friendly and efficient heterojunction solar cell production is achieved.
Patent Information
- Application Number
- CN202411534627.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-31
- Publication Date
- 2025-02-11
AI Technical Summary
The wet velvet making process in the production of traditional heterojunction solar cells leads to large consumption of chemicals and water, large wastewater discharge, and large equipment volume, which increases construction and operation costs.
Using dry black silicon velvet making process, including pre-cleaning, dry etching, pickling and drying steps, to save chemicals and water through dry velvet making equipment, reduce sewage discharge, and reduce equipment land occupation and operation costs. .
Reduces chemicals and water consumption, reduces sewage discharge, improves environmental protection, reduces equipment land occupation and operating costs, and improves battery efficiency.
Smart Images
Figure CN119421538A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of heterojunction battery production, and in particular relates to a dry-process black silicon texturing process and equipment for heterojunction batteries. Background Art
[0002] Heterojunction solar cells are an N-type single-crystal bifacial cell with the advantages of simple process, high power generation and low cost per kilowatt-hour. They are the third generation of solar cell technology after PERC and TOPCon cells.
[0003] The traditional texturing process for heterojunction solar cells is wet texturing. Since this process only uses chemicals and additives for texturing, it results in huge consumption of chemicals and water. The large consumption of chemicals and water resources also results in large discharge of sewage and wastewater, so more environmental protection treatment costs are required; in addition, the traditional wet texturing process equipment is large in size, which requires a larger plant and more management personnel to operate, resulting in increased construction and operation costs.
[0004] Therefore, in order to solve the above technical problems, it is necessary to provide a dry black silicon texturing process and equipment for heterojunction cells.
[0005] The information disclosed in this background technology section is only intended to enhance the understanding of the overall background of the invention and should not be regarded as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to a person skilled in the art. Summary of the invention
[0006] The purpose of the present invention is to provide a dry black silicon texturing process and equipment for heterojunction batteries, which adopts a dry texturing process to reduce the consumption of chemicals, additives, water and other resources, reduce the discharge of sewage and wastewater, and is more environmentally friendly.
[0007] In order to achieve the above object, a technical solution provided by a specific embodiment of the present invention is as follows:
[0008] The dry black silicon texturing process for heterojunction cells includes the following steps:
[0009] S1. Pre-cleaning: Use alkaline solution and hydrogen peroxide to pre-clean the silicon wafer to remove grease, metal ions and impurities on the surface of the silicon wafer, and then dry the silicon wafer;
[0010] S2, dry etching: placing the silicon wafer into the etching reaction chamber, balancing the vacuum through the base, and then evacuating the vacuum to form a vacuum environment inside the etching reaction chamber, and then introducing the reaction gas into the etching reaction chamber to etch the silicon wafer;
[0011] S3, pickling: using an acid solution or pure water to clean the etched silicon wafer to remove the reaction byproducts on the surface of the silicon wafer;
[0012] S4, drying: the cleaned silicon wafers are sent to a dryer and dried using hot air.
[0013] In one or more embodiments of the present invention, in S2, the reaction gas includes SF6, O2, Cl2 or other chlorine-based gases.
[0014] In one or more embodiments of the present invention, a dry black silicon texturing device for heterojunction cells includes a base and an etching reaction chamber;
[0015] The interior of the base is a hollow structure;
[0016] The etching reaction chamber is fixedly mounted on the base, a gas distributor is fixedly mounted on the etching reaction chamber, an upper electrode radio frequency source is arranged above the inside of the etching reaction chamber, a lower electrode radio frequency source is arranged below the inside of the etching reaction chamber, and a carrier is fixedly mounted on the lower electrode radio frequency source;
[0017] A vacuum hood is fixedly mounted on the base, the vacuum hood is located inside the etching reaction chamber, a first chamber and a second chamber are arranged inside the vacuum hood, and a plurality of through holes are opened on one end surface of the first chamber;
[0018] A connecting pipe is fixedly installed inside the first chamber, the connecting pipe connects the first chamber and the inside of the base, and a fourth solenoid valve is fixedly installed on the connecting pipe;
[0019] A vacuum pumping system is fixedly installed on the base, and the vacuum pumping system can vacuum the base and the interior of the second chamber respectively.
[0020] In one or more embodiments of the present invention, four groups of branch pipes are fixedly mounted on the exhaust hood, and the four groups of branch pipes are all connected to the interior of the second chamber;
[0021] The four groups of branch pipes are all inserted into the interior of the etching reaction chamber and are respectively located at the bending parts of four groups of adjacent surfaces inside the etching reaction chamber.
[0022] In one or more embodiments of the present invention, the branch pipe is in a regular quadrilateral shape, two side surfaces of the branch pipe are respectively in contact with adjacent surfaces inside the etching reaction chamber, and multiple groups of tube holes are provided on the other two side surfaces of the branch pipe.
[0023] In one or more embodiments of the present invention, a third solenoid valve is fixedly installed on each of the four groups of branch pipes.
[0024] In one or more embodiments of the present invention, the vacuum pump system includes a vacuum pump, the vacuum pump is fixedly mounted on the base, a three-way pipeline is fixedly mounted on the input end of the vacuum pump, the two ends of the three-way pipeline are respectively connected to the second chamber and the interior of the base, and the two ends of the three-way pipeline are respectively fixedly mounted with a first solenoid valve and a second solenoid valve;
[0025] A tail exhaust pipe is fixedly installed at the output end of the vacuum pump.
[0026] In one or more embodiments of the present invention, an air supply pipe is fixedly mounted on the upper end surface of the air distributor seat, and a plurality of nozzle groups are fixedly mounted on the lower end surface of the air distributor seat.
[0027] In one or more embodiments of the present invention, the upper electrode RF source includes a coupling coil and a shielding cover, the shielding cover is fixedly mounted on the lower end surface of the gas separator, and the coupling coil is spirally wound on the outside of the shielding cover.
[0028] In one or more embodiments of the present invention, a dryer is further included, wherein an electric hot air mechanism is disposed inside the dryer.
[0029] Compared with the prior art, the present invention uses a dry black silicon texturing process in the manufacture of heterojunction solar cells, which reduces the consumption of chemicals, additives, water and other resources, reduces the discharge of sewage and wastewater, and is more environmentally friendly than wet texturing.
[0030] At the same time, since the dry-process velveting equipment occupies a small area, it can be operated in a smaller plant, and accordingly fewer people are required;
[0031] The velvet surface obtained by dry texturing has the advantages of reducing reflection and increasing light absorption compared to the velvet surface obtained by conventional wet texturing, which can improve battery efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0032] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0033] Figure 1 This is a flow chart of a dry black silicon texturing process for heterojunction cells in one embodiment of the present invention;
[0034] Figure 2 It is a structural diagram of a black silicon fleece manufacturing device for a heterojunction battery by dry method in one embodiment of the present invention;
[0035] Figure 3It is a cross-sectional view of a dry-process black silicon texturing device for heterojunction cells in one embodiment of the present invention;
[0036] Figure 4 It is a schematic diagram of the partial structure of the base of a dry-process black silicon texturing equipment for heterojunction batteries in one embodiment of the present invention;
[0037] Figure 5 It is a schematic diagram of the side view of the base structure of a dry black silicon texturing device for heterojunction batteries in one embodiment of the present invention;
[0038] Figure 6 This is a branch pipe structure diagram of a dry black silicon texturing equipment for heterojunction batteries in one embodiment of the present invention.
[0039] Description of main reference numerals:
[0040] 10. Base; 11. Placement rack; 20. Etching reaction chamber; 21. Box door; 30. Gas distributor; 31. Gas supply pipe; 32. Nozzle; 40. Vacuum pump; 41. Three-way pipeline; 411. First solenoid valve; 412. Second solenoid valve; 42. Tail exhaust pipe; 50. Lower electrode RF source; 60. Carrier; 70. Coupling coil; 80. Shielding cover; 90. Vacuum hood; 91. Branch pipe; 911. Third solenoid valve; 912. Pipe hole; 92. Connecting pipe; 921. Fourth solenoid valve; 93. First chamber; 931. Through hole; 94. Second chamber. DETAILED DESCRIPTION
[0041] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.
[0042] like Figure 1 As shown, the dry black silicon texturing process for heterojunction cells in one embodiment of the present invention includes the following steps:
[0043] S1. Pre-cleaning: Use a solution mixed with pure water, potassium hydroxide and hydrogen peroxide to pre-clean the silicon wafer to remove grease, metal ions and impurities on the surface of the silicon wafer, and then dry the silicon wafer;
[0044] S2, dry etching: put the silicon wafer into the etching reaction chamber 20, balance the vacuum through the base 10, and then evacuate the vacuum to form a high vacuum environment in the etching reaction chamber 20, and then introduce the reaction gas (SF6, O2, Cl2 or other chlorine-based gas) into the etching reaction chamber 20 to etch the silicon wafer;
[0045] S3, pickling: using a solution of pure water, hydrofluoric acid and hydrochloric acid to clean the etched silicon wafer to remove the reaction byproducts on the surface of the silicon wafer;
[0046] S4, drying: the cleaned silicon wafers are sent to a dryer and dried using hot air.
[0047] like Figure 2-Figure 6 As shown, the heterojunction cell dry black silicon texturing equipment comprises a base 10, an etching reaction chamber 20 and a drying machine. The drying machine is provided with an electric hot air mechanism to dry the silicon wafer after texturing and cleaning so as to proceed to the next process.
[0048] The interior of the base 10 is a hollow structure, and in the initial state, the hollow structure inside the base 10 is in a high vacuum state. A placement rack 11 is fixedly connected to the front end of the base 10, and the placement rack 11 is used to temporarily store silicon wafers to facilitate loading and unloading.
[0049] The etching reaction chamber 20 is fixedly mounted on the base 10 , and a chamber door 21 is disposed at the front end of the etching reaction chamber 20 , and loading and unloading of materials are performed by opening the chamber door 21 .
[0050] like Figure 3 As shown, a gas distributor 30 is fixedly installed on the top of the etching reaction chamber 20, and a gas supply pipe 31 is fixedly installed on the upper end surface of the gas distributor 30. The gas supply pipe 31 is connected to a gas source and is used to introduce the reaction gas required for etching, such as SF6, O2 and Cl2, into the etching reaction chamber 20. A plurality of nozzles 32 are fixedly installed on the lower end surface of the gas distributor 30, and the plurality of nozzles 32 are all connected to the interior of the gas distributor 30. Through the plurality of nozzles 32, the reaction gas can be uniformly introduced into the etching reaction chamber 20, thereby ensuring that the reaction gas inside the etching reaction chamber 20 is uniformly distributed.
[0051] Specifically, the reaction gas first enters the gas distributor 30 through the gas supply pipe 31, and then is released into the etching reaction chamber 20 through the multiple groups of nozzles 32 at the bottom of the gas distributor 30, thereby realizing multi-point dispersed supply of the reaction gas, allowing the reaction gas to evenly enter the etching reaction chamber 20, so as to perform uniform and high-quality etching on the silicon wafer.
[0052] An upper electrode RF source is arranged above the inside of the etching reaction chamber 20, and the upper electrode RF source includes a coupling coil 70 and a shielding cover 80. The shielding cover 80 is fixedly mounted on the lower end surface of the gas separation seat 30, and the coupling coil 70 is spirally wound on the outside of the shielding cover 80. The coupling coil 70 can generate an inductively coupled electric field inside the shielding cover 80, and under the action of the electric field, the reaction gas can glow discharge inside the shielding cover 80 to generate high-density plasma.
[0053] Specifically, reaction gases such as SF6, O2 and Cl2 are released into the shielding cover 80 through multiple groups of nozzles 32, and generate F and Cl active ions through glow discharge. While bombarding the surface of the silicon wafer, they chemically react with the silicon wafer to generate volatile SiF4 and SiCl4, which are continuously extracted, thereby etching the silicon wafer.
[0054] In addition, O2 is ionized to release O active ions, which react with Si exposed after etching to form SiO2 passivation layer. Since the reaction rate of F and Cl active ions with Si is greater than their reaction rate with SiO2, SiO2 at the bottom of silicon will be etched away under the directional action of the electric field, while the sidewalls are less bombarded and etched by ions, thus being better protected. This makes the etching very directional, and finally the required microstructure can be etched on the surface of the silicon wafer. The specific reaction formula is as follows:
[0055] ①Si+SF6+O2+Cl2→SiF4(g)↑+SiCl4(g)↑+SiFxOy+SOFx
[0056] ②Si+SF6+O2→SiF4(g)↑+SO2(g)↑
[0057] A lower electrode RF source 50 is disposed at the lower portion of the etching reaction chamber 20 , and a carrier plate 60 is fixedly mounted on the lower electrode RF source 50 . The silicon wafer is placed on the carrier plate 60 for etching.
[0058] like Figure 3 and Figure 4 As shown, a vacuum hood 90 is fixedly connected to one side of the base 10, and one side of the etching reaction chamber 20 is open. The vacuum hood 90 is placed inside the etching reaction chamber 20 from the side of the opening of the etching reaction chamber 20. A first chamber 93 and a second chamber 94 are provided inside the vacuum hood 90. A plurality of through holes 931 are provided on an end surface of the first chamber 93 away from the base 10, and the plurality of through holes 931 are all connected to the inside of the first chamber 93.
[0059] A connecting pipe 92 is fixedly installed inside the first chamber 93 , and the connecting pipe 92 connects the first chamber 93 and the inside of the base 10 , that is, the base 10 and the inside of the etching reaction chamber 20 can be connected through the first chamber 93 and the plurality of through holes 931 .
[0060] A fourth solenoid valve 921 is fixedly mounted on the connecting tube 92 . The fourth solenoid valve 921 is used to control the closing of the connecting tube 92 so as to control the opening and closing of the base 10 and the inside of the etching reaction chamber 20 .
[0061] In the prior art, after the silicon wafer is loaded into the etching reaction chamber 20, the etching reaction chamber 20 needs to be evacuated to a high vacuum state, which wastes time and reduces the texturing efficiency of the silicon wafer. Through the high vacuum environment inside the base 10, the base 10 and the etching reaction chamber 20 can quickly balance the vacuum, so that the etching reaction chamber 20 quickly has a certain vacuum degree, while the vacuum degree inside the base 10 is reduced.
[0062] Specifically, during the process of loading and unloading silicon wafers, the interior of the base 10 is evacuated to a high vacuum state in advance, and after the silicon wafers are loaded into the etching reaction chamber 20, at this time, since the interior of the etching reaction chamber 20 is a normal air environment, and the interior of the base 10 is a high vacuum environment, therefore, the fourth solenoid valve 921 is controlled to open, so that the base 10 and the etching reaction chamber 20 are connected through a number of through holes 931 and a connecting pipe 92, the base 10 can balance the vacuum inside the etching reaction chamber 20, so that the interior of the etching reaction chamber 20 is quickly balanced to a certain vacuum degree, and the specific vacuum degree is determined according to the vacuum degree and space size inside the base 10, while the vacuum degree inside the base 10 decreases. In this way, the interior of the etching reaction chamber 20 can quickly have a certain vacuum degree, and then evacuate, which can greatly shorten the time wasted in evacuating, reduce the time required for the texturing process, and improve the texturing efficiency.
[0063] A vacuum pumping system is fixedly installed on the base 10, and the vacuum pumping system includes a vacuum pump 40. The vacuum pump 40 is fixedly installed on the base 10. A three-way pipe 41 is fixedly installed at the input end of the vacuum pump 40. The two ends of the three-way pipe 41 are respectively connected to the interior of the second chamber 94 and the base 10, so that both the interior of the base 10 and the interior of the second chamber 94 can be vacuumed.
[0064] Among them, the first solenoid valve 411 and the second solenoid valve 412 are fixedly installed at both ends of the three-way pipeline 41, and the first solenoid valve 411 is used to control the connection and disconnection between the three-way pipeline 41 and the inside of the second chamber 94, and the second solenoid valve 412 is used to control the connection and disconnection between the three-way pipeline 41 and the inside of the base 10.
[0065] A tail exhaust pipe 42 is fixedly installed at the output end of the vacuum pump 40. The tail exhaust pipe 42 is connected to the exhaust system of the workshop to introduce the extracted gas into the exhaust system.
[0066] like Figure 3-Figure 5 As shown, four branches 91 are fixedly mounted on the exhaust hood 90, and the four branches 91 are all connected to the interior of the second chamber 94. The four branches 91 are all inserted into the interior of the etching reaction chamber 20 and are respectively located at the bending parts of four adjacent surfaces inside the etching reaction chamber 20.
[0067] Among them, Figure 6As shown, the branch pipe 91 is a regular quadrilateral, and the two side surfaces of the branch pipe 91 are respectively in contact with the adjacent surfaces inside the etching reaction chamber 20, and multiple groups of tube holes 912 are provided on the other two side surfaces of the branch pipe 91. In the final vacuuming stage, the multiple groups of tube holes 912 on the two side surfaces of the four groups of second chambers 94 can simultaneously perform vacuuming from different directions at four different corners to achieve rapid and uniform vacuuming.
[0068] The existing vacuuming method is to connect a pipe and extract air from a fixed point, and the vacuuming rate is slow. The reason for this is that the gas diffusion at the corners is slow, resulting in uneven vacuuming. By arranging a group of connecting pipes 92 at four different corners inside the etching reaction chamber 20, and evenly opening multiple groups of tube holes 912 on different sides of the connecting pipes 92, vacuuming can be performed from multiple points in multiple directions, evenly and quickly, which can greatly improve the vacuuming rate in the final stage, which is conducive to quickly forming a high vacuum reaction environment and further accelerating the efficiency of texturing.
[0069] Among them, the third solenoid valve 911 is fixedly installed on each of the four groups of branch pipes 91. The third solenoid valve 911 is used to control the on-off of each group of branch pipes 91, which is beneficial to controlling the air extraction demand at different stages.
[0070] Specifically, during the etching reaction stage, volatile SiF4 and SiCl4 are continuously generated, and they need to be continuously and timely extracted at this time. Since they move downward, they can be extracted as quickly as possible from under the carrier 60. At this time, the two groups of branch pipes 91 located at the upper two corners can be controlled by the third solenoid valve 911 to close, and the two groups of branch pipes 91 located at the lower two corners can be opened, so that the SiF4 and SiCl4 generated by the reaction can be extracted in time through the two groups of branch pipes 91 below to prevent them from going up again and causing silicon wafer contamination. In addition, the reaction exhaust gas can be evenly and comprehensively extracted through the multiple groups of tube holes 912 on different sides of the two groups of branch pipes 91, which is beneficial to improving the quality of texturing.
[0071] When in use, place the silicon wafer on the carrier 60, close the box door 21, and then open the fourth solenoid valve 921, so that the base 10 balances the vacuum environment inside the etching reaction chamber 20, so that a certain vacuum environment is quickly formed inside the etching reaction chamber 20, and then close the fourth solenoid valve 921, open the first solenoid valve 411 and start the vacuum pump 40, and use the four groups of branch pipes 91 to perform multi-point and multi-directional vacuum extraction from different corners inside the etching reaction chamber 20, so that a high vacuum environment is formed as quickly as possible inside the etching reaction chamber 20. Finally, the reaction gas is introduced into the shielding cover 80 to etch and texture the silicon wafer. During the etching process, the reaction exhaust gas is extracted through the two groups of branch pipes 91 below, so that efficient and high-quality dry etching and texture can be achieved.
[0072] It should be noted that during the loading and unloading preparation process, the vacuum pump 40 evacuates the interior of the base 10 by opening the second solenoid valve 412 , so as to balance the vacuum inside the etching reaction chamber 20 again through the base 10 .
[0073] The present invention uses a dry texturing process in the manufacture of heterojunction solar cells, which reduces the consumption of chemicals, additives, water and other resources, reduces the discharge of sewage and wastewater, and is more environmentally friendly than wet texturing.
[0074] At the same time, since the dry-process velveting equipment occupies a small area, it can be operated in a smaller plant, and accordingly fewer people are required;
[0075] The velvet surface obtained by dry texturing has the advantages of reducing reflection and increasing light absorption compared to the velvet surface obtained by conventional wet texturing, and can improve the battery efficiency by 0.2-0.6%.
[0076] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and range of equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.
[0077] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.
Claims
1. Heterojunction battery dry black silicon texturing process, characterized in that: The following steps are involved: S1. Pre-cleaning: Use alkaline solution and hydrogen peroxide to pre-clean the silicon wafer to remove grease, metal ions and impurities on the surface of the silicon wafer, and then dry the silicon wafer; S2, dry etching: placing the silicon wafer into the etching reaction chamber, balancing the vacuum through the base, and then evacuating the vacuum to form a vacuum environment inside the etching reaction chamber, and then introducing the reaction gas into the etching reaction chamber to etch the silicon wafer; S3, pickling: using an acid solution or pure water to clean the etched silicon wafer to remove the reaction byproducts on the surface of the silicon wafer; S4, drying: the cleaned silicon wafers are sent to a dryer and dried using hot air.
2. The dry black silicon texturing process for heterojunction cells according to claim 1 is characterized in that: In S2, the reaction gas includes SF6, O2 and Cl2.
3. Heterojunction battery dry black silicon texturing equipment, applied to the heterojunction battery dry black silicon texturing process as described in any one of claims 1-2, characterized in that: include: A base, wherein the interior of the base is a hollow structure; An etching reaction chamber, wherein the etching reaction chamber is fixedly mounted on a base, a gas distributor is fixedly mounted on the etching reaction chamber, an upper electrode radio frequency source is arranged above the inside of the etching reaction chamber, a lower electrode radio frequency source is arranged below the inside of the etching reaction chamber, and a carrier is fixedly mounted on the lower electrode radio frequency source; A vacuum hood is fixedly mounted on the base, the vacuum hood is located inside the etching reaction chamber, a first chamber and a second chamber are arranged inside the vacuum hood, and a plurality of through holes are opened on one end surface of the first chamber; A connecting pipe is fixedly installed inside the first chamber, the connecting pipe connects the first chamber and the inside of the base, and a fourth solenoid valve is fixedly installed on the connecting pipe; A vacuum pumping system is fixedly installed on the base, and the vacuum pumping system can vacuum the base and the interior of the second chamber respectively.
4. The dry black silicon texturing equipment for heterojunction batteries according to claim 3 is characterized in that: Four groups of branch pipes are fixedly installed on the exhaust hood, and the four groups of branch pipes are all connected to the interior of the second chamber; The four groups of branch pipes are all inserted into the interior of the etching reaction chamber and are respectively located at the bending parts of four groups of adjacent surfaces inside the etching reaction chamber.
5. The dry black silicon texturing equipment for heterojunction batteries according to claim 4 is characterized in that: The branch pipe is in the shape of a regular quadrilateral, and two side surfaces of the branch pipe are respectively fitted with adjacent surfaces inside the etching reaction chamber, and multiple groups of tube holes are provided on the other two side surfaces of the branch pipe.
6. The dry black silicon texturing equipment for heterojunction batteries according to claim 5, characterized in that: The third solenoid valve is fixedly installed on each of the four groups of branch pipes.
7. The dry black silicon texturing equipment for heterojunction batteries according to claim 3 is characterized in that: The vacuum pump system comprises a vacuum pump, which is fixedly mounted on the base, a three-way pipeline is fixedly mounted on the input end of the vacuum pump, two ends of the three-way pipeline are respectively connected with the second chamber and the interior of the base, and a first solenoid valve and a second solenoid valve are respectively fixedly mounted on the two ends of the three-way pipeline; A tail exhaust pipe is fixedly installed at the output end of the vacuum pump.
8. The dry black silicon texturing equipment for heterojunction batteries according to claim 3 is characterized in that: An air supply pipe is fixedly mounted on the upper end surface of the air distribution seat, and a plurality of nozzle groups are fixedly mounted on the lower end surface of the air distribution seat.
9. The dry black silicon texturing equipment for heterojunction batteries according to claim 3, characterized in that: The upper electrode radio frequency source comprises a coupling coil and a shielding cover, wherein the shielding cover is fixedly mounted on the lower end surface of the gas separation seat, and the coupling coil is spirally wound on the outside of the shielding cover.
10. The dry black silicon texturing equipment for heterojunction batteries according to claim 3, characterized in that: The utility model also comprises a dryer, wherein an electric hot air mechanism is arranged inside the dryer.