Aluminum capacitor and lamination method thereof
By using stacking auxiliary frames and welding after multiple stacking in capacitor stacking technology, the problems of low efficiency, poor welding and difficult removal of defective products in the prior art are solved, and a more efficient stacking process is achieved and better capacitor performance.
Patent Information
- Application Number
- CN202411725667.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-28
- Publication Date
- 2025-02-14
AI Technical Summary
The existing capacitor stacking technology has problems such as low efficiency, poor welding, difficulty in eliminating defective products and relying on manual product quality, resulting in low yield rate and low processing efficiency.
The capacitor stacking is carried out by using a laminated auxiliary frame, and the positive electrode gasket function of the auxiliary frame reduces the height difference between the positive electrode and the negative electrode, and the conductive paste is impregnated in the negative electrode area, thereby enhancing the connection between the capacitor and negative electrode units. At the same time, the process of welding after multiple stacking is adopted to avoid the stress of multiple positive electrode welding and the difficulty of removing defective products.
The efficiency and yield of capacitor stacking are improved, the equivalent series resistance is reduced, the performance of the capacitor is enhanced, and the dependence on artificial proficiency is reduced.
Smart Images

Figure CN119446791A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of capacitors, and in particular relates to an aluminum capacitor and a lamination method thereof. Background Art
[0002] The lamination step is a common processing step in the preparation of capacitors. The existing process mainly includes single-piece lamination technology and whole-line lamination technology.
[0003] The main disadvantages of the monolithic stacking technology are as follows: 1. Only one sheet can be stacked at a time, and the stacking efficiency is low. 2. The positive electrode needs to be welded once each time the sheets are stacked. When the last sheet is stacked, the positive electrode area of the previous capacitor will have been welded multiple times, which increases the probability of poor welding and leads to a low yield rate. 3. Before stacking, a gasket needs to be welded on the positive end of the single-sheet capacitor. Each piece is welded separately, which is inefficient. 4. After assembly, silver paste needs to be manually applied around the aluminum core, and product quality is affected by manual proficiency.
[0004] The whole-line lamination technology has the following main disadvantages: 1. When laminating the whole line, defective products cannot be removed, or they will be missing after being removed, thereby reducing the product yield. 2. When laminating multiple layers, due to the difference in thickness between the positive and negative electrodes, it will cause bending or the negative electrode of the product will warp, and it is not easy to add a gasket to the positive electrode, affecting the processing efficiency.
[0005] Therefore, a capacitor lamination method that can solve the above technical problems is needed. Summary of the invention
[0006] In order to solve the above technical problems, the present invention provides an aluminum capacitor and a lamination method thereof.
[0007] The present invention is achieved through the following technical solutions.
[0008] The present invention provides a lamination method of an aluminum capacitor, comprising the following steps:
[0009] S1: preparing a single-layer capacitor monomer on a raw material piece;
[0010] S2: Testing and sorting to remove defective single-layer capacitor monomers;
[0011] S3: Cut the good single-layer capacitor monomer from the raw material part, transfer it to the stacking jig, and bond it;
[0012] S4: stacking using an auxiliary frame, welding the positive electrodes between the single-layer capacitor monomers and the protruding parts of the auxiliary frame, and curing the negative electrodes of the single-layer capacitor monomers to obtain a stacked body;
[0013] S5: After removing the lamination jig, the negative electrode area of the laminate is immersed in silver paste;
[0014] S6: Assemble the laminate to the frame lead through the positioning hole B, weld the positive electrode area of the laminate to the frame lead, and connect the negative electrode area through silver glue;
[0015] S7: Cut off the excess part of the auxiliary frame to complete the stacking preparation.
[0016] Preferably, the raw material in step S1 is capacitor aluminum foil, and the capacitor aluminum foil is used to prepare a conductive polymer layer, a graphite layer, and a silver paste layer to form a single-layer capacitor monomer.
[0017] Preferably, in the step S3, a placement groove is provided on the lamination jig, the single-layer capacitor monomer is placed in the placement groove, both sides of the placement groove are limiting protrusions, and in the step S3, a positioning pin is provided on the lamination jig.
[0018] Preferably, the bonding is performed by using silver glue in step S3.
[0019] Preferably, in step S4, a protruding portion and a positioning through hole A are provided on the auxiliary frame, and a plurality of the protruding portions and the positioning through holes A are evenly spaced and distributed, and the auxiliary frame is positioned by the positioning through holes A and the positioning pins on the lamination jig.
[0020] Preferably, the immersion treatment in step S5 includes the step of immersing the negative electrode region of the laminate with a conductive paste.
[0021] Preferably, in the step S6, a positioning through hole B is provided on the frame lead, and a plurality of the positioning through holes B are evenly spaced and distributed. The laminate is positioned and assembled through the positioning hole A of the auxiliary frame and the positioning hole B of the lead frame. The positive electrode of the laminate and the protruding part of the auxiliary frame sandwiched in the middle of the positive electrode area of the laminate are welded to the lead frame by laser, and the negative electrode area of the laminate is connected to the lead frame using silver glue.
[0022] Preferably, the protruding portion of the auxiliary frame cut off in step S7 is retained in the positive electrode region of the laminate, and serves to raise the positive electrode region of the laminate.
[0023] An aluminum capacitor prepared by the method.
[0024] The beneficial effects of the present invention are:
[0025] 1. The stacking auxiliary frame used in the present invention also has the function of a positive electrode gasket, which can effectively reduce the height difference between the positive and negative electrodes of a single-chip capacitor unit. The stacking auxiliary frame can be impregnated with conductive slurry in the entire negative electrode area after stacking, thereby enhancing the connection between the capacitor negative electrode units and reducing the equivalent series resistance.
[0026] 2. The process route of the present invention adopts multiple stacking and then one welding, but different from the existing overall stacking preparation method, the method of the present invention uses single-chip capacitor units to re-array and assemble them on the stacking auxiliary frame, and then form an array assembly frame to support the overall impregnation of the negative electrode, avoiding multiple positive electrode welding stresses when the single-chip capacitor unit is directly assembled on the lead frame, and also avoiding the disadvantage of being unable to eliminate defective products during overall stacking. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] Figure 1 It is a process flow chart of the present invention;
[0028] Figure 2 It is a structural schematic diagram of step S1 of the present invention;
[0029] Figure 3 It is a structural schematic diagram of step S2 of the present invention;
[0030] Figure 4 It is a structural schematic diagram of step S3 of the present invention;
[0031] Figure 5 It is a structural schematic diagram of step S4 of the present invention;
[0032] Figure 6 It is a structural schematic diagram of step S5 of the present invention;
[0033] Figure 7 It is a structural schematic diagram of step S6 of the present invention;
[0034] Figure 8 is a structural schematic diagram of step S7 of the present invention;
[0035] Fig. 9 This is a schematic diagram of the laminated structure of Comparative Example 1;
[0036] Fig.10 This is a schematic diagram of the laminated structure of Comparative Example 1;
[0037] Fig.11 It is a structural schematic diagram of step S1 of the present invention;
[0038] Fig.12 It is a structural schematic diagram of step S3 of the present invention;
[0039] Fig.13 It is a structural schematic diagram of step S4 of the present invention;
[0040] Fig.14 It is a structural schematic diagram of step S5 of the present invention;
[0041] In the figure: 1-raw material, 2-capacitor monomer, 3-stack jig, 31-placement groove, 32-protrusion, 4-auxiliary frame, 41-protruding part, 42-positioning hole A, 5-stack body, 6-frame lead, 61-positioning hole B, 7-single-layer aluminum capacitor, 8-frame lead B, 9-cured long aluminum core, 10-aluminum capacitor. DETAILED DESCRIPTION
[0042] The technical solution of the present invention is further described below, but the scope of protection claimed is not limited to the description.
[0043] Embodiment 1:
[0044] like Figures 1 to 8 As shown, a lamination method of an aluminum capacitor comprises the following steps:
[0045] S1: preparing a single-layer capacitor monomer 2 on a raw material piece 1;
[0046] S2: testing and sorting, removing defective single-layer capacitor monomers 2;
[0047] S3: cutting the good single-layer capacitor monomer 2 from the raw material part, transferring it to the lamination jig 3, and bonding it;
[0048] S4: stacking using the auxiliary frame 4, welding the positive electrodes between the multilayer capacitor monomers and the protruding parts of the auxiliary frame 4, and curing the negative electrodes of the multilayer capacitor monomers to obtain a laminate 5;
[0049] S5: After removing the lamination jig 3, the negative electrode area of the laminate 5 is impregnated with silver paste;
[0050] S6: Assemble the laminate 5 to the frame lead 6 through the positioning hole A on the auxiliary frame and the positioning hole B61 on the lead frame 6, and weld the positive electrode area of the laminate 5 and the protruding part of the auxiliary frame 4 to the frame lead 6, and connect the negative electrode area of the laminate 5 to the frame lead 6 through silver glue;
[0051] S7: Cut off the redundant part of the auxiliary frame 4 to complete the lamination preparation.
[0052] The raw material 1 in step S1 is capacitor aluminum foil. The capacitor aluminum foil is used to prepare a conductive polymer layer, a graphite layer, and a silver paste layer to form a single-layer capacitor monomer 2. This step can be achieved by existing technology.
[0053] In step S3, a placement groove 31 is provided on the stacking jig 3, and the single-layer capacitor monomer 2 is placed in the placement groove 31. The two sides of the placement groove 31 are limit protrusions 32. The stacking jig 3 is provided with positioning pins, and the auxiliary frame 4 is accurately positioned through the positioning holes A and the positioning pins on the stacking jig 3.
[0054] In the step S3, bonding is performed by using silver glue.
[0055] In step S4, a protrusion 41 and a through hole A42 are provided on the auxiliary frame 4, and a plurality of protrusions 41 are evenly spaced and arranged, and the protrusions 41 are arranged one-to-one with the placement grooves 31, and the protrusions 41 can extend into the placement grooves 31. The auxiliary frame 4 also has the function of a positive electrode gasket, which can effectively reduce the height difference between the positive electrode and the negative electrode of the single-layer capacitor monomer 2.
[0056] The immersion treatment in step S5 includes the step of immersing the negative electrode region of the laminate 5 with a conductive paste, wherein the conductive paste is a silver paste, and this step can be achieved by existing technology.
[0057] In the step S6, a through hole B61 is set on the frame lead 6, and a plurality of positioning through holes B61 are evenly spaced. The laminate 5 is precisely assembled with the positioning holes A42 on the auxiliary frame 4 and the positioning holes B61 on the lead frame 6. The positive electrode area of the laminate 5 and the protruding part of the auxiliary frame 4 are connected to the lead frame 6 by laser, and the negative electrode area of the laminate 5 is connected to the lead frame 6 by silver glue.
[0058] The protruding portion of the auxiliary frame 4 cut off in step S7 remains in the positive electrode region of the laminate 5 , playing the role of raising the positive electrode region of the laminate 5 .
[0059] Comparative Example 1:
[0060] like Figures 9 to 10 As shown, a lamination method of an aluminum capacitor comprises the following steps:
[0061] S1: After the aluminum strip is processed to be suitable for aluminum capacitor production by using existing technology, the incoming single-layer aluminum capacitor 7 is cut from the steel strip one by one and transferred to the frame lead B8. The positive electrode of the single-layer aluminum capacitor 7 is connected to the frame lead B8 by laser welding. The negative electrode of the single-layer aluminum capacitor 7 is connected to the frame lead B8 by bonding with conductive silver paste. The second layer of single-layer aluminum capacitor 7 is stacked on the basis of the first layer of single-layer aluminum capacitor 7, from the first layer to the Nth layer, where N is the number of layers required according to product design requirements;
[0062] S2: After turning over the frame lead B8, continue to stack a single layer of aluminum capacitor 7 on the other side. The stacking method is the same as step S1. The number of stacking layers can be the same as or different from step S1 as needed.
[0063] S3: After laminating and welding both sides of the frame lead B8, the whole lead is placed in an oven for curing.
[0064] Comparative Example 2:
[0065] like Figures 11 to 14As shown, a lamination method of an aluminum capacitor comprises the following steps:
[0066] S1: same as step S1 of embodiment 1, preparing an aluminum foil strip with a single-layer capacitor cell 2;
[0067] S2: silver paste is printed on one side of the single-layer capacitor cell 2 on the aluminum foil strip;
[0068] S3: putting the whole aluminum foil strip together with the single-layer capacitor monomer 2 into the lamination jig 3 for lamination, and then performing a curing treatment to obtain a cured long aluminum core 9, wherein the curing step is the prior art;
[0069] S4: Cut the entire solidified long aluminum core 9 into single aluminum capacitors 10, and place them in a stacking jig 3 and arrange them neatly;
[0070] S5: Mount the cut single aluminum capacitors 10 on the frame lead 6 in a row, and then weld the positive electrodes of the aluminum capacitors 10 to the frame lead 6 .
[0071] The processes for the specific steps described in Example 1 and Comparative Examples 1 and 2 may use the existing technology for producing capacitors, such as the curing process using the existing technology for producing capacitors.
[0072] 40V75μF capacitors were prepared using the lamination methods of Example 1, Comparative Examples 1 and 2, and 5 40V75μF capacitors were taken from the same production batch for testing. The obtained structures are shown below.
[0073] Table 1 40V75μF capacitor test data of Example 1
[0074]
[0075]
[0076] Table 2 Test data of 40V75μF capacitor of comparative example 1
[0077] Electrical performance parameters Capacitance (CS) μF ESR(mΩ) LC(μA) 1 80 6.1 238 2 82 6.4 234 3 83 5.9 244 4 83 6.3 237 5 81 6.2 234
[0078] Table 3 Test data of 40V75μF capacitor of comparative example 2
[0079] Electrical performance parameters Capacitance (CS) μF ESR(mΩ) LC(μA) 1 83 5.9 205 2 85 6.0 216 3 82 5.9 213 4 81 6.3 218 5 76 5.7 215
[0080] It can be seen from Tables 1-3 that the 40V75μF capacitor prepared in Example 1 has lower ESR and LC values and better capacitor performance.
Claims
1. A lamination method of an aluminum capacitor, characterized in that: The following steps are involved: S1: preparing a single-layer capacitor monomer (2) on a raw material piece (1); S2: testing and sorting, removing defective single-layer capacitor cells (2); S3: cutting the good single-layer capacitor monomer (2) from the raw material part, transferring it to the lamination jig (3), and bonding it; S4: using the auxiliary frame (4) to stack, welding the positive electrodes between the single-layer capacitor monomers, and curing the negative electrodes of the single-layer capacitor monomers to obtain a stacked body (5); S5: After removing the lamination jig (3), the laminate (5) is subjected to an immersion treatment; S6: Assembling the laminate (5) to the frame lead (6), and welding the laminate (5) and the frame lead (6); S7: Cut off the excess part of the auxiliary frame (4) to complete the lamination preparation.
2. A lamination method of an aluminum capacitor as claimed in claim 1, characterized in that: In step S1, the raw material (1) is capacitor aluminum foil, and the capacitor aluminum foil is used to prepare a conductive polymer layer, a graphite layer, and a silver paste layer to form a single-layer capacitor monomer (2).
3. A lamination method of an aluminum capacitor as claimed in claim 1, characterized in that: In the step S3, a placement groove (31) is provided on the lamination jig (3), the single-layer capacitor monomer (2) is placed in the placement groove (31), and both sides of the placement groove (31) are provided with limiting protrusions (32).
4. A lamination method of an aluminum capacitor as claimed in claim 1, characterized in that: In the step S3, bonding is performed by using silver glue.
5. A lamination method of an aluminum capacitor as claimed in claim 1, characterized in that: In the step S4, a protruding portion (41) inserted between the stacked layers of capacitor monomers (2) is provided on the auxiliary frame (4), and the protruding portion has the function of a positive electrode gasket between the multilayer capacitor monomers (2). The protruding portion (41) and the positioning holes A (42) of the auxiliary frame (4) are evenly spaced and arranged in a plurality.
6. A lamination method of an aluminum capacitor as claimed in claim 1, characterized in that: The impregnation treatment in step S5 includes the step of impregnating the negative electrode region of the laminate (5) with a conductive paste.
7. A lamination method of an aluminum capacitor as claimed in claim 1, characterized in that: In the step S6, positioning holes B (61) are provided on the frame lead (6), and a plurality of positioning holes B (61) are evenly spaced and arranged. The laminate (5) is positioned and assembled with the lead frame (6) through the auxiliary frame (4), and the laminate (5) and the protruding part of the auxiliary frame are welded to the lead frame (6) by laser.
8. The lamination method of an aluminum capacitor according to claim 1, characterized in that: The auxiliary frame (4) removed in step S7 is retained in the positive electrode region of the laminate (5), thereby achieving the function of raising the height of the positive electrode side of the laminate (5).
9. An aluminum capacitor prepared by the method according to any one of claims 1 to 8.
Citation Information
Cited By
Stacking method of laminated aluminum capacitor
CN120089530A