Vertically packaged Micro-LED colorized display unit

Abstract

The invention discloses a vertically packaged Micro-LED colorized display unit, which is characterized in that a colorized display module is arranged on one surface of a multi-layer carrier plate, and a pixel driving IC chip is arranged on the other surface of the multi-layer carrier plate; the pixel driving IC chip is used for receiving an external signal and driving display, the pixel driving IC chip realizes electrical interconnection with the colorized display module through the multi-layer carrier plate and transmits the received external signal to the colorized display module, and the colorized display module is used for realizing colorized display of the external signal; the multi-layer support plate is formed by any number of TGV glass support plates, TSV silicon support plates or combinations of the TGV glass support plates and the TSV silicon support plates, and every two adjacent support plates are laminated through a silicon oxide medium. According to the scheme, a special TFT (Thin Film Transistor) or CMOS (Complementary Metal-Oxide-Semiconductor Transistor) substrate does not need to be developed, instead, vertical integration of the pixel driving IC chip and the LED pixel chip is realized by utilizing the horizontal re-wiring and the vertical metalized through holes of the multi-layer support plate, high-yield manufacturing of a colorized display unit can be realized, the colorized display unit can be seamlessly spliced into any space shape, the size of a splicing seam is less than or equal to 4 microns, and the production cost is reduced. High-resolution and high-refresh-rate display with the same effect as that of TFT or CMOS active driving can also be achieved through the scale of the splicing units and the design of matched driving chips of the splicing units.

Description

Technical Field

[0001] The present invention belongs to the field of Micro-LED display, and in particular relates to a vertically packaged Micro-LED color display unit. Background Art

[0002] Micro-LED is an innovative technology in the display field. Its ultra-high brightness display and reliability, large size, ultra-lightness and ultra-thinness are advantages that traditional displays cannot match, and it is also a hot development direction in the field of solid-state display devices. With the development of display technology, the application fields of aircraft, ships, and cars have proposed the development trend of panoramic immersive display with ultra-large size, lightweight, high resolution, high refresh rate, and high degree of freedom of spatial shape; in terms of application scenarios, the above technology development trends are also applicable to product fields such as stereoscopic display, e-sports large screen, commercial ultra-large size, and spatial special-shaped screen. Currently, only Micro-LED display technology is most suitable for the above application scenarios.

[0003] The Chinese patent with application number 202211373274.6 discloses a seamless splicing Micro-LED display panel and its preparation method, which belongs to the field of display panel technology and solves the problem that the existing seamless splicing Micro-LED display panel is difficult to process and expensive due to low yield and difficulty in later maintenance. The display panel includes a through hole, a substrate, a TFT pixel circuit, an LED chip, a number of connection circuits and a back circuit layer; the through hole is located on one side of the substrate; the TFT pixel circuit and the number of connection circuits are both located on the top of the substrate; the TFT pixel circuit is connected to the number of connection circuits; the LED chip is located on the corresponding electrode of the circuit layer of the TFT pixel circuit; the number of connection circuits are press-connected with the FPC through the through hole; the back circuit layer is located at the bottom of the substrate; the back circuit layer is connected to the TFT pixel circuit layer through the through hole, and the surface of the through hole is plated with a metal film layer, which is conductive.

[0004] Chinese patent application number 202311465944.1 discloses an active full-color Micro-LED display device and preparation method. The method prepares a Micro-LED micro display device based on a silicon-based integrated circuit process. The device includes a silicon-based substrate, an epitaxial layer, and a Micro-LED array. An epitaxial layer is prepared on one side of the silicon-based substrate, and a Micro-LED light-emitting chip array is formed on the epitaxial layer by etching; then a pixel driving circuit is prepared on the silicon-based substrate and combined with a peripheral display control circuit to realize the lighting of the Micro-LED device and image display, so as to solve the current problems of low transfer efficiency, high cost, low yield, etc. in the mass transfer of Micro-LEDs, and promote the development of Micro-LED display technology.

[0005] A Chinese patent with application number 202010320861.3 discloses a display panel, a display device and a method for manufacturing a display panel. The display panel includes a TFT substrate, a Micro-LED located on the TFT substrate, and a reflective layer that at least wraps the side wall of the Micro-LED. The reflective layer allows the light emitted by the Micro-LED to be derived from the top of the Micro-LED. Since the reflective layer at least wraps the side wall of the Micro-LED, the light emitted by the Micro-LED will be reflected on the reflective layer. Therefore, the light emitted by the Micro-LED is emitted from the top of the Micro-LED as much as possible, thereby improving the light output efficiency and enhancing the display effect. In addition, the reflective layer can be produced by BP equipment. For example, during the production process, the colloid exposure depth and the uniformity of the glue coating are easy to control. Therefore, the production difficulty of this reflective layer is low.

[0006] A Chinese patent with application number 201910884470.1 discloses a high-density Micro LED sandwich structure active drive display unit, in which the three-primary color LED light-emitting chips of the display unit are fixed on the back of a transparent glass carrier, and all of them use LED light-emitting chips with reverse light emission; a TFT driver device array is grown on the back of the transparent glass carrier, and the electrodes of the TFT driver device are bonded to the electrodes of the LED light-emitting chip; the circuit driver devices are distributed and fixed on the printed circuit carrier, and the glass carrier lead-out pads are connected to the circuit carrier lead-out pads through metal columns; the circuit driver devices are connected to the TFT driver devices through circuit carrier leads, circuit carrier lead-out pads, metal columns, glass carrier leads and glass carrier lead-out pads. The present invention can achieve seamless splicing of display screens with good reliability.

[0007] According to the above-mentioned public patents, the existing Micro-LED display technology is mainly equipped with TFT and CMOS active drive substrates. Although related research has been hot in the past five years, it has not yet entered the industrialization stage. There are two main pain points: First, it is difficult to achieve large size. The mainstream process platforms of TFT and CMOS have a size limit, and the size of a single-chip display is difficult to increase; because the driver IC of the above two mainstream driving methods is on the same plane as the display surface, it is also difficult to achieve large-size seamless splicing. Second, the manufacturing cost is high. TFT and CMOS active drive substrates need to be equipped with Micro-LED dedicated driver ICs and equipped with mass transfer processes to realize the integration of display pixels and substrates. On the one hand, there is no Micro-LED dedicated driver IC and the development cost is high. On the other hand, the yield of the mass transfer process is low, the pixel repair is difficult, and the process cost remains high. Therefore, exploring a vertically packaged Micro-LED color display unit and its structure, so that it can avoid the above problems and support the rapid advancement of Micro-LED industrialization, is in line with the strategic needs of the country's new generation of information technology industry for new displays. Summary of the invention

[0008] In view of the above-mentioned engineering technical problems of existing Micro-LED displays such as difficulty in large-size molding, low device yield and high cost, the purpose of the present invention is to provide a vertically packaged Micro-LED color display unit with the characteristics of large size, light weight, high resolution, high refresh rate, high degree of freedom in spatial shape, etc., which can meet the high-reliability application of Micro-LED display technology in the fields of stereoscopic display, e-sports screen, commercial super-large size, spatial special-shaped screen, etc., and can be promoted to TV, display, VR and other scenarios, and the application fields can achieve full coverage of aircraft, vehicles, ships, and commercial use.

[0009] The specific technical solution for achieving the purpose of the present invention is:

[0010] A vertically packaged Micro-LED color display unit, comprising a color display module, a multi-layer carrier board, and a pixel driver IC chip;

[0011] The color display module is arranged on one side of the multi-layer carrier, and a pixel driving IC chip is arranged on the other side of the multi-layer carrier;

[0012] The pixel driver IC chip is used to receive external signals and drive display. The pixel driver IC chip is electrically interconnected with the color display module through a multi-layer carrier board, and transmits the received external signals to the color display module. The color display module is used to realize color display of the external signals.

[0013] The multi-layer carrier is formed by combining any number of TGV glass carriers and TSV silicon carriers, and two adjacent carriers are laminated via a silicon oxide medium.

[0014] Furthermore, the electrical interconnection between the pixel driver IC chip and the color display module is achieved by rewiring in the horizontal plane on the multi-layer carrier and cross-linking of metallized through holes in the vertical direction;

[0015] The rewiring in the horizontal plane on the multi-layer carrier includes the control circuit of the color display module and the packaging circuit of the pixel driver IC chip;

[0016] The metallized through holes in the vertical direction of the multi-layer carrier are formed by TGV or TSV process, and metallization is achieved by evaporation and electroplating or copper glue potting process.

[0017] Furthermore, the color display module includes a Micro LED pixel chip and a color display component determined according to the type of the Micro LED pixel chip.

[0018] Furthermore, when the Micro LED pixel chip is a white light pixel chip, the color display component is a CF film;

[0019] The Micro LED pixel chip is arranged on a multi-layer carrier and is electrically interconnected with a matching pixel driver IC chip through the multi-layer carrier. A CF film is arranged above the Micro LED pixel chip.

[0020] Further, when the Micro LED pixel chip is a blue light pixel chip, the color display component is a QD color conversion layer group, including a green QD color conversion layer, a red QD color conversion layer and a QD dam;

[0021] The Micro LED pixel chip is arranged on a multi-layer carrier and is electrically interconnected with a matching pixel driver IC chip through the multi-layer carrier. A plurality of color conversion layer groups are arranged above the Micro LED pixel chip, each color conversion layer group includes a green QD color conversion layer and a red QD color conversion layer, and QD dams are arranged between the plurality of color conversion layer groups.

[0022] Furthermore, when the Micro LED pixel chip is a blue light pixel chip, the color display component is a CF film and a yellow QD color conversion layer;

[0023] The Micro LED pixel chip is arranged on a multi-layer carrier and is electrically interconnected with a matching pixel driver IC chip through the multi-layer carrier. A yellow QD color conversion layer is arranged on the Micro LED pixel chip, and a CF film is arranged above the yellow QD color conversion layer.

[0024] Furthermore, the color display module includes multiple groups of Micro LED pixel chipsets, each group of Micro LED pixel chipsets includes a blue light pixel chip, a green light pixel chip, and a red light pixel chip. The multiple groups of Micro LED pixel chipsets are arranged on a multi-layer carrier board and are electrically interconnected with a matching pixel driver IC chip through the multi-layer carrier board.

[0025] Furthermore, a BM black matrix is ​​arranged between the Micro LED pixel chips to block lateral light crosstalk.

[0026] The present invention also provides a display device based on the above-mentioned color display unit, comprising a plurality of vertically packaged Micro-LED color display units;

[0027] The plurality of vertically packaged Micro-LED color display units realize a display device of any plane size or spatial three-dimensional shape based on the splicing of multi-layer carrier boards, and the splicing seam size is ≤4μm.

[0028] Compared with the prior art, the present invention has the following beneficial effects:

[0029] (1) The solution of the present invention does not require the development of a dedicated TFT or CMOS substrate. The horizontal redistribution of the multi-layer substrate and the vertical metallized through-holes are used to realize the vertical integration of the pixel driver IC chip and the LED pixel chip. The pixel driver IC chip and the LED pixel chip are respectively arranged on the front and back sides of the multi-layer substrate. The multi-layer substrate adopts a TGV glass substrate or a TSV silicon substrate, which is easy to realize large-size seamless splicing, reducing the cost of raw material development. In addition, through the scale of the splicing unit and the design of its supporting driver chip, a high-resolution and high-refresh rate display with the same effect as TFT or CMOS active drive can be realized;

[0030] (2) The solution of the present invention abandons the complex mass repair process and instead adopts the method of intelligent screening of splicing units to greatly improve the yield of large screens and reduce process costs.

[0031] The present invention is further described below in conjunction with specific implementation modes. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 Schematic diagram of the vertically packaged Micro-LED color display unit structure in Example 1 of the present invention.

[0033] Figure 2 Schematic diagram of the vertically packaged Micro-LED color display unit structure in Example 2 of the present invention.

[0034] Figure 3 Schematic diagram of the vertically packaged Micro-LED color display unit structure in Example 3 of the present invention.

[0035] Figure 4 Schematic diagram of the vertically packaged Micro-LED color display unit structure in Example 4 of the present invention. DETAILED DESCRIPTION

[0036] A vertically packaged Micro-LED color display unit, comprising a color display module, a multi-layer carrier board, and a pixel driver IC chip;

[0037] The color display module is arranged on one side of the multi-layer carrier, and a pixel driving IC chip is arranged on the other side of the multi-layer carrier;

[0038] The pixel driver IC chip is used to receive external signals and drive display. The pixel driver IC chip is electrically interconnected with the color display module through a multi-layer carrier board, and transmits the received external signals to the color display module. The color display module is used to realize color display of external signals.

[0039] In addition, the back of the color display unit is designed with an FPC flexible strip for receiving and transmitting external video signals.

[0040] In this solution, the pixel driver IC chip is mounted on the back of the carrier through the ACF hot pressing process or the Flip Chip process, and the FPC flexible tape is bound to the carrier through the ACF hot pressing process.

[0041] Specifically, the multi-layer carrier is formed by combining any number of glass and silicon wafers, and two adjacent carriers are laminated via a silicon oxide medium.

[0042] The electrical interconnection between the pixel driver IC chip and the color display module is achieved by rewiring in the horizontal plane of the multi-layer carrier and cross-linking of metallized through holes in the vertical direction;

[0043] The rewiring in the horizontal plane on the multilayer carrier includes the control circuit of the color display module and the packaging circuit of the pixel driver IC chip, and the minimum line width is ≤5μm;

[0044] The metallized through holes in the vertical direction of the multilayer substrate are formed by TGV or TSV process, and the depth-to-width ratio of the through holes is 3:1 to 50:1; and the metallization is achieved by evaporation and electroplating or copper glue potting process, and the conductivity of the interconnection line is not less than 1.7 (Ω·m 2 ) -1 .

[0045] The color display module includes a Micro LED pixel chip and a color display component determined according to the type of the Micro LED pixel chip. The size of the Micro LED pixel chip is 10 μm to 50 μm, and the thickness of the epitaxial film is 1.3 μm to 10 μm.

[0046] When the Micro LED pixel chip is a white light pixel chip, the color display component is a CF film, and the white light pixel chip is obtained by MQW regulation or GaN-based red, green and blue epitaxial vertical stacking;

[0047] The Micro LED pixel chip is arranged on a multi-layer carrier and is electrically interconnected with a matching pixel driver IC chip through the multi-layer carrier. A CF film is arranged above the Micro LED pixel chip.

[0048] When the Micro LED pixel chip is a blue light pixel chip, the color display component is a QD color conversion layer group, including a green QD color conversion layer, a red QD color conversion layer and a QD dam;

[0049] The Micro LED pixel chip is arranged on a multi-layer carrier and is electrically interconnected with a matching pixel driver IC chip through the multi-layer carrier. A plurality of color conversion layer groups are arranged above the Micro LED pixel chip, each color conversion layer group includes a green QD color conversion layer and a red QD color conversion layer, and QD dams are arranged between the plurality of color conversion layer groups;

[0050] When the Micro LED pixel chip is a blue light pixel chip, the color display component is a CF film and a yellow QD color conversion layer;

[0051] The Micro LED pixel chip is arranged on a multi-layer carrier and is electrically interconnected with a matching pixel driver IC chip through the multi-layer carrier. A yellow QD color conversion layer is arranged on the Micro LED pixel chip, and a CF film is arranged above the yellow QD color conversion layer.

[0052] The size of the monochrome block of the QD color conversion layer is 3μm to 15μm, and the QD is surrounded by dams to limit its height. The photoluminescence quantum yield at room temperature is ≥85% for green QD, ≥80% for red QD, and ≥70% for yellow QD.

[0053] The color display module includes multiple groups of Micro LED pixel chips, each group of Micro LED pixel chips includes a blue light pixel chip, a green light pixel chip, and a red light pixel chip. The multiple groups of Micro LED pixel chips are arranged on a multi-layer carrier and are electrically interconnected with a matching pixel driver IC chip through the multi-layer carrier; wherein the blue light and green light pixel chips are GaN-based blue-green light LEDs, and the red light pixel chip is an InGaN red light or AlGaInP red light LED.

[0054] A BM black matrix is ​​arranged between the Micro LED pixel chips to block lateral light crosstalk. The black matrix material is a modified epoxy resin with a compressive strength of not less than 1 MPa.

[0055] The present invention also provides a display device based on the above-mentioned color display unit, comprising a plurality of vertically packaged Micro-LED color display units;

[0056] The plurality of vertically packaged Micro-LED color display units realize a display device of any plane size or spatial three-dimensional shape based on the splicing of multi-layer carrier boards, and the splicing seam size is ≤4 μm.

[0057] In order to clearly describe the technical solution and the effects achieved by the present invention, the technical solution of the present invention is clearly explained below in combination with the accompanying drawings and specific embodiments of the present invention, so that technical personnel in the field can implement the invention without performing creative work. The structure shown in the accompanying drawings is not the entire actual structure but only a part of the actual structure. It should be noted that all other embodiments made by ordinary technical personnel in the field on the basis of the embodiments of the present invention without performing creative work should fall within the protection scope of the present invention.

[0058] The following examples are only for better explanation of the present invention, but the content of the present invention is not limited to the application in the examples. Therefore, those skilled in the art can make non-essential modifications to the implementation scheme based on the above invention content and apply it to other embodiments, which is still within the protection scope of the present invention. In addition, the experimental methods without specific conditions in the following examples should be carried out according to the conventional conditions or the conditions recommended by the manufacturer. If the expressions in the text are not specially explained, they are only used for distinction and have no other meanings.

[0059] Example 1

[0060] Reference Figure 1 A vertically packaged Micro-LED color display unit, each color display unit uses a glass or silicon wafer as a multi-layer carrier 40, the multi-layer carrier 40 integrates a Micro LED pixel chip 60 on the front side, and carries a pixel driver IC chip 70 on the back side. The Micro LED pixel chip 60 and the pixel driver IC chip 70 are vertically electrically interconnected through metallized through holes and rewiring technology in the multi-layer carrier 40. An FPC flexible belt is designed on the back side of each display unit for receiving and transmitting external video signals;

[0061] The colorization of the display unit in this embodiment is achieved by the following method:

[0062] The Micro LED pixel chip on the front of the multi-layer substrate 40 is an epitaxial thin film obtained by miniaturizing a white light LED wafer. The device structure from top to bottom is a CF film 10, a white light Micro LED pixel chip 30, a multi-layer substrate 40, and a driver IC chip 70;

[0063] The display unit can be expanded into a 55-inch flat panel display screen through a splicing process, with a splicing seam size of 4μm. The multilayer substrate 40 forms a through hole 50 through the TGV process, and the depth-to-width ratio of the through hole is 4:1. The multilayer substrate 40 is a three-layer glass laminated by a silicon oxide medium; the electrical interconnection is achieved by cross-linking the redistribution 60 in the horizontal plane of the multilayer substrate 40 and the metallized through hole 50 in the vertical direction. The redistribution 60 includes the control circuit of the pixel chip and the packaging circuit of the driver IC chip, and the minimum line width is 5μm; the through hole metallization is achieved by evaporation and electroplating process, and the conductivity of the interconnection circuit is not less than 2.65 (Ω·m2)-1. The pixel driver IC chip and the FPC flexible belt are both bound to the back of the multilayer substrate 40 through the ACF hot pressing process. The pixel chip size is 50μm, and the white light LED wafer is obtained by MQW regulation; the thickness of the epitaxial film is 2.3μm. A BM black matrix 50 is provided around the Micro LED pixel chip 30 to block lateral light crosstalk. The black matrix material is modified epoxy resin with a compressive strength of 1.5 MPa.

[0064] Example 2

[0065] Reference Figure 2 A vertically packaged Micro-LED color display unit, each display unit uses a glass or silicon wafer as a multi-layer carrier 14, the multi-layer carrier 14 integrates a Micro LED pixel chip 16 on the front, and carries a pixel driver IC chip 19 on the back. The Micro LED pixel chip 16 and the driver IC chip 19 are vertically electrically interconnected through metallized through holes 17 and rewiring 18 in the multi-layer carrier 14. An FPC flexible belt is designed on the back of each display unit for receiving and transmitting external video signals;

[0066] The colorization of the display unit is achieved by the following method: the Micro LED pixel chip 16 on the front of the multi-layer carrier 14 is an epitaxial thin film obtained by miniaturizing a blue light LED wafer, and the device structure is, from top to bottom, a green QD color conversion layer 11, a red QD color conversion layer 12, a blue light Micro LED pixel chip 16, a multi-layer carrier 14, and a driver IC chip 19, and QD dams 13 are arranged between the multiple groups of color conversion layers.

[0067] The display unit can be expanded into a 65-inch large-size display screen through a splicing process, with a splicing seam size of 3μm. The multilayer substrate 14 forms a through hole through the TGV process, and the aspect ratio of the through hole is 10:1. The multilayer substrate 14 is laminated by 4 layers of glass through a silicon oxide medium. The electrical interconnection is achieved by cross-linking the rewiring 18 in the horizontal plane of the multilayer substrate 14 and the metallized through hole 17 in the vertical direction. The rewiring includes the control circuit of the pixel chip and the packaging circuit of the driver IC chip, with a minimum line width of 4μm; the through hole metallization is achieved by a copper glue potting process, and the interconnection line conductivity is 1.7 (Ω·m2)-1. The driver IC chip 19 is mounted on the back of the substrate through the Flip Chip process, and the FPC flexible tape is bound to the substrate through the ACF hot pressing process. The pixel chip size is 30μm, the blue light pixel chip is a GaN-based blue light LED, and the thickness of the epitaxial film is 1.3μm. The size of the single-color block of the QD color conversion layer is 10μm. The QD is surrounded by a dam to limit the height. At room temperature, the photoluminescence quantum yield of the QD is 85% for green and 80% for red. A BM black matrix 15 is provided around the pixel chip to block lateral light crosstalk. The black matrix material is a modified epoxy resin with a compressive strength of 1.8MPa.

[0068] Example 3

[0069] Reference Figure 3 A vertically packaged Micro-LED color display unit, each display unit uses a glass or silicon wafer as a multi-layer carrier 32, the front of the multi-layer carrier 32 integrates a Micro LED pixel chip 35, and the back is equipped with a pixel driver IC chip 38. The Micro LED pixel chip 35 and the pixel driver IC chip 38 are vertically electrically interconnected through metallized through holes 36 and a redistribution layer 37 in the multi-layer carrier 32. An FPC flexible belt is designed on the back of each display unit for receiving and transmitting external video signals.

[0070] The colorization of the display unit is achieved by the following method:

[0071] The Micro LED pixel chip 35 on the front of the multilayer substrate 32 is an epitaxial film obtained by miniaturizing the blue light LED wafer. The device structure is CF film 10, yellow QD color conversion layer 34, blue light Micro LED pixel chip 35, multilayer substrate 32, and driver IC chip 38 from top to bottom. The display unit can be expanded into a 27-inch large-size display screen through a splicing process, and the splicing size is 4μm. The multilayer substrate 32 forms a through hole through the TGV process, and the depth-to-width ratio of the through hole is 5:1. The multilayer substrate 32 is laminated by 3 layers of glass through a silicon oxide medium. The electrical interconnection is achieved by cross-linking the redistribution layer 37 in the horizontal plane of the multilayer substrate 32 and the metallized through hole 36 in the vertical direction. The redistribution includes the control circuit of the pixel chip and the packaging circuit of the driver IC chip 38, with a minimum line width of 5μm; the through hole metallization is achieved by a copper glue potting process, and the interconnection line conductivity is 1.7 (Ω·m2)-1. The driver IC chip 38 and the FPC flexible tape are both bound to the substrate through the ACF hot pressing process. The pixel chip size is 35μm. The blue light Micro LED pixel chip 35 is a GaN-based blue light LED, and the thickness of the epitaxial film is 1.5μm. The size of the single-color block of the QD color conversion layer is 35μm. There are dams around the QD to limit the height. At room temperature, the photoluminescence quantum yield of the QD is 70% yellow. The blue light Micro LED pixel chip 35 is surrounded by a BM black matrix to block lateral light crosstalk. The black matrix material is modified epoxy resin with a compressive strength of 1.2MPa.

[0072] Example 4

[0073] Reference Figure 4 A vertically packaged Micro-LED color display unit, each display unit uses a glass or silicon wafer as a multi-layer carrier 24, the multi-layer carrier 24 integrates a Micro LED pixel chip on the front, and carries a pixel driver IC on the back. The pixel chip and the pixel driver IC chip 27 are vertically electrically interconnected through the metallized through-hole 25 and the redistribution layer 26 in the multi-layer carrier 24. A FPC flexible belt is designed on the back of each display unit for receiving and transmitting external video signals. The colorization of the display unit is achieved by the following method: the multiple groups of Micro LED pixel chips on the front of the multi-layer carrier 24 are three-color epitaxial thin films obtained by miniaturizing red, green, and blue LED wafers respectively, and the device structure is from top to bottom, which is a multiple group of blue pixel chips 21, green pixel chips 22, red pixel chips 23, multi-layer carrier 24, and pixel driver IC chips 27.

[0074] The display unit can be expanded into a 12-inch display screen through a splicing process with a splicing seam size of 3μm. The multilayer substrate 24 forms a through hole through the TSV process, and the aspect ratio of the through hole is 3:1. The multilayer substrate 24 is laminated by 3 layers of silicon wafers through a silicon oxide medium. The electrical interconnection is achieved by cross-linking the redistribution layer 26 in the horizontal plane of the multilayer substrate 24 and the metallized through hole 25 in the vertical direction. The redistribution includes the control circuit of the pixel chip and the packaging circuit of the pixel driver IC chip 27, with a minimum line width of 3μm; the through hole metallization is achieved by evaporation and electroplating process, and the conductivity of the interconnection line is 3.2 (Ω·m2)-1.

[0075] The pixel driver IC chip 27 is mounted on the back of the multilayer substrate 24 through the Flip Chip process, and the FPC flexible tape is bound to the substrate through the ACF hot pressing process. The pixel chip size is 10μm, the blue and green pixel chips are GaN-based blue-green LEDs, and the red pixel chip is an InGaN red LED; the thickness of the epitaxial film of the RGB three-color pixel chip is 1.9μm, 1.5μm and 1.3μm respectively. A BM black matrix is ​​provided around the pixel chip to block lateral light crosstalk. The black matrix material is modified epoxy resin with a compressive strength of 1MPa.

[0076] The solution of the present invention provides a variety of color display solutions, without the need to develop dedicated TFT or CMOS substrates, and utilizes the horizontal rewiring of the multi-layer substrate and the vertical metallized through-holes to realize the vertical integration of the pixel driver IC chip and the LED pixel chip. The pixel driver IC chip and the LED pixel chip are respectively arranged on the front and back sides of the multi-layer substrate, and the multi-layer substrate adopts a TGV glass substrate or a TSV silicon substrate, which is easy to realize large-size seamless splicing, reducing the cost of raw material development, and through the scale of the splicing unit and its supporting driver chip design, a high-resolution and high-refresh rate display with the same effect as TFT or CMOS active drive can also be achieved. The complex mass repair process is abandoned and the splicing unit intelligent screening method is adopted, which greatly improves the yield of large screens and reduces the process cost.

[0077] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A vertically packaged Micro-LED color display unit, characterized in that: Including color display module, multi-layer carrier board, pixel driver IC chip; The color display module is arranged on one side of the multi-layer carrier, and a pixel driving IC chip is arranged on the other side of the multi-layer carrier; The pixel driver IC chip is used to receive external signals and drive display. The pixel driver IC chip is electrically interconnected with the color display module through a multi-layer carrier board, and transmits the received external signals to the color display module. The color display module is used to realize color display of the external signals. The multi-layer carrier is formed by combining any number of TGV glass carriers and TSV silicon carriers, and two adjacent carriers are laminated via a silicon oxide medium.

2. The vertically packaged Micro-LED color display unit according to claim 1, characterized in that: The electrical interconnection between the pixel driver IC chip and the color display module is achieved by rewiring in the horizontal plane of the multi-layer carrier and cross-linking of metallized through holes in the vertical direction; The rewiring in the horizontal plane on the multi-layer carrier includes the control circuit of the color display module and the packaging circuit of the pixel driver IC chip; The metallized through holes in the vertical direction of the multi-layer carrier are formed by TGV or TSV process, and metallization is achieved by evaporation and electroplating or copper glue potting process.

3. The vertically packaged Micro-LED color display unit according to claim 1, characterized in that: The color display module includes a Micro LED pixel chip and a color display component determined according to the type of the Micro LED pixel chip.

4. The vertically packaged Micro-LED color display unit according to claim 3, characterized in that: When the Micro LED pixel chip is a white light pixel chip, the color display component is a CF film; The Micro LED pixel chip is arranged on a multi-layer carrier and is electrically interconnected with a matching pixel driver IC chip through the multi-layer carrier. A CF film is arranged above the Micro LED pixel chip.

5. The vertically packaged Micro-LED color display unit according to claim 3, characterized in that: When the Micro LED pixel chip is a blue light pixel chip, the color display component is a QD color conversion layer group, including a green QD color conversion layer, a red QD color conversion layer and a QD dam; The Micro LED pixel chip is arranged on a multi-layer carrier and is electrically interconnected with a matching pixel driver IC chip through the multi-layer carrier. A plurality of color conversion layer groups are arranged above the Micro LED pixel chip, each color conversion layer group includes a green QD color conversion layer and a red QD color conversion layer, and QD dams are arranged between the plurality of color conversion layer groups.

6. The vertically packaged Micro-LED color display unit according to claim 3, characterized in that: When the Micro LED pixel chip is a blue light pixel chip, the color display component is a CF film and a yellow QD color conversion layer; The Micro LED pixel chip is arranged on a multi-layer carrier and is electrically interconnected with a matching pixel driver IC chip through the multi-layer carrier. A yellow QD color conversion layer is arranged on the Micro LED pixel chip, and a CF film is arranged above the yellow QD color conversion layer.

7. The vertically packaged Micro-LED color display unit according to claim 1, characterized in that: The color display module includes multiple groups of Micro LED pixel chipsets, each group of Micro LED pixel chipsets includes a blue light pixel chip, a green light pixel chip, and a red light pixel chip. The multiple groups of Micro LED pixel chipsets are arranged on a multi-layer carrier board and are electrically interconnected with a matching pixel driver IC chip through the multi-layer carrier board.

8. The vertically packaged Micro-LED color display unit according to any one of claims 4 to 6, characterized in that: A BM black matrix is ​​arranged between the Micro LED pixel chips to block lateral light crosstalk.

9. The display device of the color display unit according to any one of claims 1 to 7, characterized in that: It includes multiple vertically packaged Micro-LED color display units; The plurality of vertically packaged Micro-LED color display units realize a display device of any plane size or spatial three-dimensional shape based on the splicing of multi-layer carrier boards, and the splicing seam size is ≤4μm.

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