Preparation method of PVD (Physical Vapor Deposition) semiconductor reaction cavity water-cooling plate assembly and water-cooling plate assembly

Abstract

The invention discloses a preparation method of a PVD (Physical Vapor Deposition) semiconductor reaction cavity water-cooling plate assembly and the water-cooling plate assembly, and relates to the technical field of semiconductor water-cooling plate preparation. The method comprises the steps that according to the size of a target base, an oxygen-free copper material is cut, then rough machining is conducted, and a base blank is obtained; cutting the oxygen-free copper material according to the size of the target cover plate, and performing rough machining to obtain a cover plate blank; performing heat treatment on the cover plate blank to obtain a heat-treated cover plate blank; after a base blank and the heat treatment cover plate blank are assembled, welding is conducted, and an assembling assembly is obtained; performing water pressure detection on the assembly component under the water pressure of 0.6-0.8 MPa; and carrying out finish machining on the assembly component passing through the water pressure detection, and then carrying out helium leak detection to obtain a finished product water-cooling plate component. The water cooling plate assembly can be tightly combined with the semiconductor reaction cavity, the welding sealing performance is high, the heat conduction efficiency is high, heat is taken away through water cooling transfer, semiconductor equipment can be rapidly cooled, and the cooling efficiency is high.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor water-cooling plate preparation, and in particular to a preparation method of a PVD semiconductor reaction chamber water-cooling plate assembly and a water-cooling plate assembly. Background Art

[0002] Thin film deposition is one of the key processes in wafer processing, which is mainly divided into physical vapor deposition (PVD) and chemical vapor deposition (CVD). Semiconductor physical vapor deposition uses the characteristic that charged particles have a certain kinetic energy after being accelerated in an electric field to guide ions to the target electrode (cathode) made of the sputtered material, and sputter the target atoms so that they move in a certain direction to the substrate and deposit into a film on the substrate. Magnetron sputtering equipment makes the coating thickness and uniformity controllable, and the prepared thin films have good density, strong adhesion and high purity. This technology has become an important means to prepare various functional films. During the operation of semiconductor equipment, a large amount of heat is emitted, and it needs to be cooled. The existing cooling method is generally air cooling, but its cooling efficiency is low and will be affected by the equipment installation space. Heat can be transferred and removed by water cooling, which can quickly cool down the semiconductor equipment. However, the water cooling equipment must be able to be tightly integrated with the semiconductor equipment and have a high heat conduction efficiency. At present, there is a lack of water cooling equipment with both welding sealing performance and heat conduction efficiency that meet the requirements. Based on this, the present application proposes a preparation method and a water cooling plate assembly for a PVD semiconductor reaction chamber. Summary of the invention

[0003] The main purpose of this application is to provide a preparation method and a water-cooling plate assembly for a PVD semiconductor reaction chamber, aiming to solve the technical problem that the welding sealing performance and heat conduction efficiency of existing water-cooling equipment are not highly compatible with semiconductor equipment.

[0004] To achieve the above objectives, the present application proposes a method for preparing a PVD semiconductor reaction chamber water-cooling plate assembly and a water-cooling plate assembly, comprising the following steps:

[0005] According to the target base size, the oxygen-free copper material is cut and then rough-processed to obtain a base blank;

[0006] According to the target cover plate size, the oxygen-free copper material is cut and then roughly processed to obtain a cover plate blank;

[0007] heat-treating the cover plate blank to obtain a heat-treated cover plate blank;

[0008] After assembling the base blank and the heat-treated cover plate blank, welding is performed to obtain an assembly component;

[0009] Performing a water pressure test on the assembly under a water pressure of 0.6MPa-0.8MPa;

[0010] The assembly components that pass the water pressure test are fine-processed and then leak-tested with helium to obtain finished water-cooled plate components.

[0011] Optionally, the step of cutting the oxygen-free copper material according to the target base size and then performing rough machining to obtain a base blank includes:

[0012] According to the target base size, the oxygen-free copper material is cut into the base shape, and then milled to form the waterway structure of the base, and the outer dimensions of the base are reserved for 0.8mm-1.2mm, and then polished to make the surface flatness of the base ≤0.08mm / m. After cleaning, a base blank is obtained.

[0013] Optionally, the step of cutting the oxygen-free copper material according to the target cover plate size and then performing rough processing to obtain the cover plate blank includes:

[0014] According to the target cover plate size, the oxygen-free copper material is cut into the shape of the cover plate, and the four sides of the cover plate are milled and then polished to make the size tolerance of the cover plate -0.15mm to -0.05mm. After cleaning, a cover plate blank is obtained.

[0015] Optionally, in the step of heat treating the cover plate blank, the heat treatment temperature is 500° C.-540° C., and the insulation time is 20 min-40 min.

[0016] Optionally, the step of welding includes:

[0017] Nickel-based solder is applied along the outer surface joint seam of the base blank and the heat-treated cover plate blank, and welding is performed by one of tungsten inert gas arc welding, arc welding, submerged arc automatic welding, diffusion welding, resistance spot welding, plasma arc welding, electron beam welding and brazing, and the weld penetration is controlled to be ≤2mm.

[0018] Optionally, in the step of performing water pressure testing, the pressure holding time of the water pressure testing is 22h-26h.

[0019] Optionally, the step of finishing the assembly components that have passed the water pressure test includes:

[0020] The assembly components that pass the water pressure test are fine-milled, then ground with a grinding wheel and polished to make the surface roughness ≤Ra0.2.

[0021] Optionally, after the step of finishing the assembly components that have passed the water pressure test, the step further includes:

[0022] The finished assembly components are cleaned with acetone, alcohol and water in sequence.

[0023] Optionally, the step of performing helium leak detection includes:

[0024] The water outlet of the cleaned assembly is sealed with a sealing piece, and a leak detection fixture joint is installed at the water inlet of the cleaned assembly. After vacuuming, helium leak detection is performed; the helium leak rate is ≤1×10 -12 Pa·m 3 / s.

[0025] The present application also proposes a water-cooling plate assembly, which is obtained by using the preparation method of the water-cooling plate assembly.

[0026] This application includes at least the following beneficial effects:

[0027] The present application uses oxygen-free copper material to prepare semiconductor reaction chamber water-cooling plate components. The oxygen-free copper material used has a purity of ≥99.95%, an oxygen content of ≤0.005%, and a total impurity content of ≤0.05%. It has no hydrogen embrittlement, high conductivity, and good processing performance, welding performance, corrosion resistance, and low-temperature performance. It can adapt to the operating environment of semiconductor equipment under continuous high or low temperatures. It is not easy to deform when used in a semiconductor reaction chamber and will not affect the overall performance of the device. The present application splits the water-cooling plate into a base and a cover according to the size of the semiconductor reaction chamber, and cuts and processes them separately, and then assembles them for Welding is performed to improve the matching of the water-cooled plate assembly with the semiconductor reaction chamber. Water pressure testing is performed under a water pressure of 0.6MPa-0.8MPa to ensure that the water-cooled plate assembly has good sealing performance and pressure bearing capacity. Helium leak detection is then performed to ensure that the water-cooled plate assembly has high airtightness, so that the water-cooled plate assembly of the present application can be tightly combined with the semiconductor reaction chamber. The welding sealing performance is high, and the water-cooled plate assembly has a high heat conduction efficiency. Heat is taken away by water cooling, so that the semiconductor equipment can be quickly cooled down, the cooling efficiency is high, and it is not affected by the equipment installation space. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. It is obvious that the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0029] Figure 1 This is a flow chart of a method for preparing a PVD semiconductor reaction chamber water cooling plate assembly according to an embodiment of the present application;

[0030] Figure 2 This is a schematic diagram of the structure of the base described in the embodiment of the present application;

[0031] Figure 3 This is a schematic diagram of the structure of the cover plate described in the embodiment of the present application;

[0032] Figure 4 This is a schematic diagram of the structure of the water cooling plate assembly described in an embodiment of the present application;

[0033] Figure 5 This is a schematic diagram of the connection between the water cooling plate assembly and the leak detection tooling described in an embodiment of the present application.

[0034] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0035] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0036] In view of the technical problems existing in the existing water-cooling plate assembly, the embodiment of the present application provides a method for preparing a PVD semiconductor reaction chamber water-cooling plate assembly, such as Figure 1 As shown, the following steps are included:

[0037] According to the target base size, the oxygen-free copper material is cut and then rough-processed to obtain a base blank;

[0038] According to the target cover plate size, the oxygen-free copper material is cut and then roughly processed to obtain a cover plate blank;

[0039] heat-treating the cover plate blank to obtain a heat-treated cover plate blank;

[0040] After assembling the base blank and the heat-treated cover plate blank, welding is performed to obtain an assembly component;

[0041] Performing a water pressure test on the assembly under a water pressure of 0.6MPa-0.8MPa;

[0042] The assembly components that pass the water pressure test are fine-processed and then leak-tested with helium to obtain finished water-cooled plate components.

[0043] The present application uses oxygen-free copper material to prepare semiconductor reaction chamber water-cooling plate components. The oxygen-free copper material used has a purity of ≥99.95%, an oxygen content of ≤0.005%, and a total impurity content of ≤0.05%. It has no hydrogen embrittlement, high conductivity, and good processing performance, welding performance, corrosion resistance, and low-temperature performance. It can adapt to the operating environment of semiconductor equipment under continuous high or low temperatures. It is not easy to deform when used in a semiconductor reaction chamber and will not affect the overall performance of the device. The present application splits the water-cooling plate into a base and a cover according to the size of the semiconductor reaction chamber, and cuts and processes them separately, and then assembles them for Welding is performed to improve the matching of the water-cooled plate assembly with the semiconductor reaction chamber. Water pressure testing is performed under a water pressure of 0.6MPa-0.8MPa to ensure that the water-cooled plate assembly has good sealing performance and pressure bearing capacity. Helium leak detection is then performed to ensure that the water-cooled plate assembly has high airtightness, so that the water-cooled plate assembly of the present application can be tightly combined with the semiconductor reaction chamber. The welding sealing performance is high, and the water-cooled plate assembly has a high heat conduction efficiency. Heat is taken away by water cooling, so that the semiconductor equipment can be quickly cooled down, the cooling efficiency is high, and it is not affected by the equipment installation space.

[0044] As an implementable method of the present application, the step of cutting the oxygen-free copper material according to the target base size and then performing rough processing to obtain a base blank includes:

[0045] According to the target base size, the oxygen-free copper material is cut into the base shape, and then the waterway structure of the base is formed by milling, and the outer dimensions of the base are reserved by 0.8mm-1.2mm, and then polished to make the surface flatness of the base ≤0.08mm / m. After cleaning, the base blank is obtained, such as Figure 2 shown.

[0046] Specifically, the surface flatness of the base refers to the deviation of the macroscopic concave-convex height of the surface of the base from the ideal plane. The present application controls the surface flatness of the base to be ≤0.08mm / m, which can make the obtained base have higher precision, which is beneficial to the assembly of the base and the cover plate, thereby obtaining a water-cooled plate assembly with better welding sealing performance.

[0047] As an implementable method of the present application, the step of cutting the oxygen-free copper material according to the target cover plate size and then performing rough processing to obtain the cover plate blank includes:

[0048] According to the target cover plate size, the oxygen-free copper material is cut into the shape of the cover plate, and the four sides of the cover plate are milled and polished to make the size tolerance of the cover plate -0.15mm to -0.05mm. After cleaning, the cover plate blank is obtained. Figure 3 shown.

[0049] After grinding, the dimensional tolerance of the cover plate can be -0.06mm, -0.08mm, -0.09mm, -0.10mm or -0.12mm, etc., but it is not limited to the listed values, and other values ​​not listed in the numerical range are also applicable. By controlling the dimensional tolerance of the cover plate within the range of -0.15mm to -0.05mm, the cover plate can have a higher precision, which is beneficial to improve the welding sealing performance of the water-cooling plate assembly, so that the water-cooling plate assembly can be better tightly combined with the semiconductor equipment.

[0050] As an implementation method of the present application, in the step of heat treating the cover plate blank, the heat treatment temperature is 500° C.-540° C., and the insulation time is 20 min-40 min.

[0051] Specifically, during the heat treatment, a resistance heating furnace is used to increase the temperature. It is preferred to set the temperature to 520°C and keep it warm for 30 minutes, so that the excess phase can be fully dissolved into the solid solution, and then immersed in water for rapid cooling to obtain a supersaturated solid solution, which can improve the internal structure of the cover plate blank, significantly improve the internal material properties of the cover plate blank, and then improve its thermal conductivity.

[0052] As an implementation method of the present application, the step of welding includes:

[0053] Nickel-based solder is applied along the outer surface joint seam of the base blank and the heat-treated cover plate blank, and welding is performed by one of tungsten inert gas arc welding, arc welding, submerged arc automatic welding, diffusion welding, resistance spot welding, plasma arc welding, electron beam welding and brazing, and the weld penetration is controlled to be ≤2mm.

[0054] Specifically, nickel-based materials have good high and low temperature strength and excellent corrosion resistance, and are suitable for transportation pipelines and equipment with high temperature and high pressure, high corrosion strength, and need to operate at continuous high or low temperatures. This application uses ERNiCrMo-3 nickel-chromium-molybdenum welding wire as a welding filler material, which has good welding process performance, good operability, and good all-position weldability. It can make the weld have excellent plasticity, toughness and crack resistance, and the weld metal has high strength and good corrosion resistance at room temperature and high temperature conditions. Since too shallow a penetration depth will lead to insufficient weld strength, and too deep a penetration depth may cause defects such as cracks and pores in the weld, reducing the welding quality, this application controls the weld penetration depth to ≤2mm, which can ensure welding strength, make the welding parts more firmly bonded, improve the strength and reliability of the welded parts, and reduce welding defects such as pores and cracks, thereby improving the overall quality of the product.

[0055] As an implementable method of the present application, in the step of performing water pressure testing, the pressure holding time of the water pressure testing is 22h-26h.

[0056] Specifically, when conducting water pressure testing, the assembly component is connected to the liquid medium, the connector inlet pressure is the safety pressure (0.6MPa-0.8MPa), the liquid outlet is sealed, and the pressure is slowly and evenly increased to the safety pressure. The pressure increase rate is not greater than 0.5MPa / min, and the pressure holding time (i.e., the duration after rising to the safety pressure) is 22h-26h. After the test is completed, observe whether there is leakage or bulging on the flow channel surface of the assembly component weld, so as to ensure that the assembly component that passes the water pressure test has a high sealing performance.

[0057] As an implementable method of the present application, the step of finishing the assembly components that have passed the water pressure test includes:

[0058] The assembly components that pass the water pressure test are fine-milled, then ground with a grinding wheel and polished to make the surface roughness ≤Ra0.2.

[0059] Specifically, the present application uses a diamond grinding wheel to grind the surface of the assembly component. The grinding speed of the diamond grinding wheel is preferably 180m / min, and the grinding feed rate is 6μm / min, so that the surface roughness of the assembly component reaches below Ra0.2, thereby obtaining a water-cooled plate assembly with higher surface accuracy, thereby improving the compatibility of the water-cooled plate assembly with semiconductor equipment.

[0060] As an implementable embodiment of the present application, after the step of fine-machining the assembly components that have passed the water pressure test, the following step is further included:

[0061] The finished assembly components are cleaned with acetone, alcohol and water in sequence.

[0062] As an implementable method of the present application, the step of performing helium leak detection includes:

[0063] The water outlet of the cleaned assembly is blocked by a sealing member, and a leak detection fixture joint is installed at the water inlet of the cleaned assembly, such as Figure 5 As shown, after vacuuming, helium leak detection is performed; the helium leak rate is ≤1×10 -12 Pa·m 3 / s.

[0064] In the specific implementation process, the present application uses a helium leak detector for helium leak detection. The specific operation steps are as follows: after the power is turned on, when the background of the leak detector shows 5×10 -13 Pa·m 3 / s, the leak detector is ready for testing; use anhydrous ethanol to wipe the leak detection tool joints, sealing rings and contact surfaces of the workpiece to be tested. For any leak detection tool used for the first time, its air tightness needs to be tested; start vacuuming after the connection is completed; use a needle to inject a small amount of alcohol at the sealing ring for sealing, and the next step can be performed only after the displayed value is basically stable; use helium to purge the weld. If there are multiple welds, proceed from top to bottom and record the final test value; after the leak detection is completed, deflate. If the leak rate continues to rise slowly during the leak detection process, it may be caused by leakage. Leakage means that helium stays in one place for too long. This supersaturation will cause leakage. When leakage may occur, nitrogen needs to be used to purge the test parts and leak detector.

[0065] Specifically, the difference between real leakage and seepage is shown in Table 1.

[0066] Table 1

[0067] Differences Real leak leakage Response time ＜10s For O-rings, >60s Leakage rise rate Very fast, rising to different levels Very slow After the helium probe is removed The leak rate drops faster Continue to rise and then level off

[0068] After testing, the helium leakage rate of the water cooling plate assembly of this application is ≤1×10 -12 Pa·m 3 / s, which has higher welding sealing performance.

[0069] The embodiment of the present application also provides a water-cooling plate assembly, which is obtained by the preparation method of the water-cooling plate assembly, such as Figure 4 shown.

[0070] The above technical solution of the present application is described in detail below in conjunction with specific embodiments.

[0071] Example 1

[0072] A method for preparing a PVD semiconductor reaction chamber water cooling plate assembly comprises the following steps:

[0073] According to the target base size, the oxygen-free copper material is cut into the base shape, and then the water channel structure of the base is formed by milling, and the outer size of the base is reserved by 1.0 mm, and then polished to make the surface flatness of the base ≤ 0.08 mm / m, and after cleaning, a base blank is obtained;

[0074] According to the target cover plate size, the oxygen-free copper material is cut into the shape of the cover plate, and the four sides of the cover plate are milled and polished to make the size tolerance of the cover plate -0.10 mm. After cleaning, a cover plate blank is obtained;

[0075] The cover plate blank is heat treated at 520° C. for 30 minutes to obtain a heat-treated cover plate blank;

[0076] After assembling the base blank and the heat-treated cover plate blank, applying nickel-based solder along the outer surface joint seam of the joint surface, and welding by tungsten inert gas arc welding, and controlling the weld penetration depth to be ≤2 mm, to obtain an assembly component;

[0077] The assembly is subjected to a water pressure test at a water pressure of 0.7 MPa for 24 hours;

[0078] The assembly components that have passed the water pressure test are finely milled, then grinded and polished to make the surface roughness ≤Ra0.2, and then cleaned with acetone, alcohol and water in turn, and then the water outlet of the cleaned assembly components is sealed with a sealing piece, and a leak detection fixture joint is installed at the water inlet of the cleaned assembly components, and then vacuumed, and helium leak detection is performed; the helium leak rate is ≤1×10 -12 Pa·m 3 / s, and obtain the finished water-cooling plate assembly.

[0079] Example 2

[0080] A method for preparing a PVD semiconductor reaction chamber water cooling plate assembly comprises the following steps:

[0081] According to the target base size, the oxygen-free copper material is cut into the base shape, and then the water channel structure of the base is formed by milling, and the outer size of the base is reserved by 0.8 mm, and then polished to make the surface flatness of the base ≤ 0.08 mm / m, and after cleaning, a base blank is obtained;

[0082] According to the target cover plate size, the oxygen-free copper material is cut into the shape of the cover plate, and the four sides of the cover plate are milled and then polished to make the size tolerance of the cover plate -0.15mm. After cleaning, a cover plate blank is obtained;

[0083] The cover plate blank is heat treated at 500° C. for 40 minutes to obtain a heat-treated cover plate blank;

[0084] After assembling the base blank and the heat-treated cover plate blank, applying nickel-based solder along the outer surface joint seam of the joint surface, welding by submerged arc automatic welding, and controlling the weld penetration depth to be ≤2 mm, to obtain an assembly component;

[0085] The assembly is subjected to a water pressure test at a water pressure of 0.6 MPa for 26 hours;

[0086] The assembly components that have passed the water pressure test are finely milled, then grinded and polished to make the surface roughness ≤Ra0.2, and then cleaned with acetone, alcohol and water in turn, and then the water outlet of the cleaned assembly components is sealed with a sealing piece, and a leak detection fixture joint is installed at the water inlet of the cleaned assembly components, and then vacuumed, and helium leak detection is performed; the helium leak rate is ≤1×10 -12 Pa·m 3 / s, and obtain the finished water-cooling plate assembly.

[0087] Example 3

[0088] A method for preparing a PVD semiconductor reaction chamber water cooling plate assembly comprises the following steps:

[0089] According to the target base size, the oxygen-free copper material is cut into the base shape, and then the water channel structure of the base is formed by milling, and the outer size of the base is reserved by 1.2 mm, and then polished to make the surface flatness of the base ≤ 0.08 mm / m, and after cleaning, a base blank is obtained;

[0090] According to the target cover plate size, the oxygen-free copper material is cut into the shape of the cover plate, and the four sides of the cover plate are milled and then polished to make the size tolerance of the cover plate -0.15mm. After cleaning, a cover plate blank is obtained;

[0091] The cover plate blank is heat treated at 540° C. for 20 minutes to obtain a heat-treated cover plate blank;

[0092] After assembling the base blank and the heat-treated cover plate blank, applying nickel-based solder along the outer surface joint seam of the joint surface, and welding by arc welding, and controlling the weld penetration depth to be ≤2mm, to obtain an assembly component;

[0093] The assembly is subjected to a water pressure test at a water pressure of 0.8 MPa for 22 hours;

[0094] The assembly components that have passed the water pressure test are finely milled, then grinded and polished to make the surface roughness ≤Ra0.2, and then cleaned with acetone, alcohol and water in turn, and then the water outlet of the cleaned assembly components is sealed with a sealing piece, and a leak detection fixture joint is installed at the water inlet of the cleaned assembly components, and then vacuumed, and helium leak detection is performed; the helium leak rate is ≤1×10 -12 Pa·m 3 / s, and obtain the finished water-cooling plate assembly.

[0095] Example 4

[0096] A method for preparing a PVD semiconductor reaction chamber water cooling plate assembly comprises the following steps:

[0097] According to the target base size, the oxygen-free copper material is cut into the base shape, and then the water channel structure of the base is formed by milling, and the outer size of the base is reserved by 1.0 mm, and then polished to make the surface flatness of the base ≤ 0.08 mm / m, and after cleaning, a base blank is obtained;

[0098] According to the target cover plate size, the oxygen-free copper material is cut into the shape of the cover plate, and the four sides of the cover plate are milled and then polished to make the size tolerance of the cover plate -0.12mm. After cleaning, a cover plate blank is obtained;

[0099] The cover plate blank is heat treated at 510° C. for 25 minutes to obtain a heat-treated cover plate blank;

[0100] After assembling the base blank and the heat-treated cover plate blank, applying nickel-based solder along the outer surface joint seam of the joint surface, and welding by diffusion welding, and controlling the weld penetration depth to be ≤2 mm, to obtain an assembly component;

[0101] The assembly is subjected to a water pressure test at a water pressure of 0.7 MPa for 23 hours;

[0102] The assembly components that have passed the water pressure test are finely milled, then grinded and polished to make the surface roughness ≤Ra0.2, and then cleaned with acetone, alcohol and water in turn, and then the water outlet of the cleaned assembly components is sealed with a sealing piece, and a leak detection fixture joint is installed at the water inlet of the cleaned assembly components, and then vacuumed, and helium leak detection is performed; the helium leak rate is ≤1×10 -12 Pa·m 3 / s, and obtain the finished water-cooling plate assembly.

[0103] The above description is only an optional embodiment of the present application, and does not limit the patent scope of the present application. All equivalent structural transformations made by using the contents of the present application specification and drawings under the inventive concept of the present application, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present application.

Claims

1. A method for preparing a PVD semiconductor reaction chamber water cooling plate assembly, characterized in that: The following steps are involved: According to the target base size, the oxygen-free copper material is cut and then rough-processed to obtain a base blank; According to the target cover plate size, the oxygen-free copper material is cut and then roughly processed to obtain a cover plate blank; heat-treating the cover plate blank to obtain a heat-treated cover plate blank; After assembling the base blank and the heat-treated cover plate blank, welding is performed to obtain an assembly component; Performing a water pressure test on the assembly under a water pressure of 0.6MPa-0.8MPa; The assembly components that pass the water pressure test are fine-processed and then leak-tested with helium to obtain finished water-cooled plate components.

2. The method for preparing a PVD semiconductor reaction chamber water cooling plate assembly according to claim 1, characterized in that: The step of cutting the oxygen-free copper material according to the target base size and then performing rough processing to obtain a base blank includes: According to the target base size, the oxygen-free copper material is cut into the base shape, and then milled to form the waterway structure of the base, and the outer dimensions of the base are reserved for 0.8mm-1.2mm, and then polished to make the surface flatness of the base ≤0.08mm / m. After cleaning, a base blank is obtained.

3. The method for preparing a PVD semiconductor reaction chamber water cooling plate assembly according to claim 1, characterized in that: The step of cutting the oxygen-free copper material according to the target cover plate size and then performing rough processing to obtain the cover plate blank comprises: According to the target cover plate size, the oxygen-free copper material is cut into the shape of the cover plate, and the four sides of the cover plate are milled and then polished to make the size tolerance of the cover plate -0.15mm to -0.05mm. After cleaning, a cover plate blank is obtained.

4. The method for preparing a PVD semiconductor reaction chamber water cooling plate assembly according to claim 1, characterized in that: In the step of heat treating the cover plate blank, the heat treatment temperature is 500° C.-540° C., and the insulation time is 20 min-40 min.

5. The method for preparing a PVD semiconductor reaction chamber water cooling plate assembly according to claim 1, characterized in that: The welding step comprises: Nickel-based solder is applied along the outer surface joint seam of the base blank and the heat-treated cover plate blank, and welding is performed by one of tungsten inert gas arc welding, arc welding, submerged arc automatic welding, diffusion welding, resistance spot welding, plasma arc welding, electron beam welding and brazing, and the weld penetration is controlled to be ≤2mm.

6. The method for preparing a PVD semiconductor reaction chamber water cooling plate assembly according to claim 1, characterized in that: In the step of performing water pressure testing, the pressure holding time of the water pressure testing is 22h-26h.

7. The method for preparing a PVD semiconductor reaction chamber water cooling plate assembly according to claim 1, characterized in that: The step of finishing the assembly components that have passed the water pressure test includes: The assembly components that pass the water pressure test are fine-milled, then ground with a grinding wheel and polished to make the surface roughness ≤Ra0.

2.

8. The method for preparing a PVD semiconductor reaction chamber water cooling plate assembly according to claim 1, characterized in that: After the step of finishing the assembly components that have passed the water pressure test, the process further includes: The finished assembly components are cleaned with acetone, alcohol and water in sequence.

9. The method for preparing a PVD semiconductor reaction chamber water cooling plate assembly according to claim 8, characterized in that: The steps of performing helium leak detection include: The water outlet of the cleaned assembly is sealed with a sealing piece, and a leak detection fixture joint is installed at the water inlet of the cleaned assembly. After vacuuming, helium leak detection is performed; the helium leak rate is ≤1×10 -12 Pa·m 3 / s.

10. A water cooling plate assembly, characterized in that: The water-cooling plate assembly is obtained by the preparation method of the water-cooling plate assembly according to any one of claims 1-9.

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