Production equipment and processing method of clean pipe for semiconductor

By designing a production equipment for clean tubes for semiconductors, using the combination of rear pushing part, traction part and spiral polishing plate, the problem of insufficient polishing effect of the inner wall of the clean tube in the prior art is solved, and more efficient polishing is achieved Effects and lower surface roughness.

CN119458121AInactive Publication Date: 2025-02-18ZHEJIANG SENMAI CLEANING SPECIAL MATERIALS CO LTD
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Patent Information

Application Number
CN202510060626.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-01-15
Publication Date
2025-02-18
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

The existing clean tube processing methods for semiconductors are only soaked in an acid solution for internal polishing, resulting in slow reaction speed between the acid and the inner wall of the clean tube, insufficient polishing effect, and ineffective removal of oxides or other dirt.

Method used

A production equipment for semiconductor clean tubes is designed, including a rear pushing part and a traction part. The traction part and the rear pushing part are driven by a motor to rotate in the clean tube, and combined with the rotation and movement of the spiral polishing plate, the inner wall of the clean tube is realized. Highly efficient polishing.

Benefits of technology

Through the use of this equipment, the finish of the inner wall of the clean tube is significantly improved, the surface roughness is reduced, and the requirements for high cleanliness and low roughness of the clean tube in semiconductor manufacturing are ensured.

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Abstract

The invention discloses production equipment of a clean pipe for a semiconductor and a processing method thereof, relates to the technical field of clean pipe production, and aims to solve the problem that the reaction speed of acid liquor and the inner wall of the clean pipe is relatively low as the clean pipe is only soaked in an acid solution for internal polishing during processing of the existing clean pipe for the semiconductor. Comprising a rear pushing part, the front end of the rear pushing part is rotationally connected with a traction part, the interiors of the rear pushing part and the traction part are hollow, the outer wall of the rear pushing part is fixedly connected with a plurality of evenly-arranged rear connecting plates, and the outer walls of the rear connecting plates are hinged to a pair of rear connecting rods through torsional springs; the opposite faces of the rear connecting rods are rotationally connected with rear wheels, and the outer wall of the traction part is fixedly connected with a plurality of evenly-arranged front connecting plates. The polishing device has the advantage of improving the polishing effect of the clean pipe.
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Description

Technical Field

[0001] The present invention relates to the technical field of clean pipe production, and more specifically to a production device for a clean pipe for semiconductor and a processing method thereof. Background Art

[0002] Clean pipes for semiconductors are indispensable equipment in the semiconductor manufacturing process. Their main function is to transport various reaction gases and ensure production in a high-purity environment. These clean pipes are usually made of high-quality materials and have good corrosion resistance and high-temperature stability to prevent contamination by external harmful substances and cross-contamination between gases. In modern semiconductor manufacturing, the function and reliability of clean pipes are directly related to the efficiency of the entire production process and product quality.

[0003] During the production process of clean pipes, the clean pipes are immersed in an acid solution for internal polishing, which can not only remove pollutants on the surface of the stainless steel and reduce the possibility of deep corrosion, but also smooth the surface of the pipe and reduce tiny irregular structures.

[0004] However, simply immersing the clean tube in an acid solution for internal polishing may result in a slow reaction between the acid and the inner wall of the clean tube, especially where the inner wall is concave or has obstacles, which may result in insufficient polishing and ineffective removal of oxides or other dirt. We propose a production device for a semiconductor clean tube and a processing method thereof. Summary of the invention

[0005] The object of the present invention is to provide a production device and a processing method for a clean tube for semiconductors, aiming to solve the problem that the existing processing of clean tubes for semiconductors is only performed by immersing the clean tubes in an acidic solution for internal polishing, which may result in a slow reaction rate between the acid solution and the inner wall of the clean tube.

[0006] In order to solve the above technical problems, the present invention provides the following technical solutions: a production equipment for a clean pipe for semiconductors, comprising a push-back portion, the front end of the push-back portion is rotatably connected to a traction portion, the interiors of the push-back portion and the traction portion are both hollow, the outer wall of the push-back portion is fixedly connected to a plurality of evenly arranged rear connecting plates, the outer walls of the rear connecting plates are hinged with a pair of rear connecting rods through torsion springs, and the opposite sides of the rear connecting rods are rotatably connected to rear wheels, the outer wall of the traction portion is fixedly connected to a plurality of evenly arranged front connecting plates, the outer walls of the front connecting plates are hinged with a pair of front connecting rods through torsion springs, and the opposite sides of the front connecting rods are rotatably connected to front wheels, the front wheels and the rear wheels are both inclined, and the inclination directions of the front wheels and the rear wheels are opposite, the inner wall of the push-back portion is fixedly connected to a motor, the main shaft of the motor is synchronously rotatably connected to the traction portion, and an auxiliary mechanism for assisting in polishing the inner wall of the clean pipe is provided on the outer wall of the push-back portion.

[0007] Preferably, the auxiliary mechanism includes a plurality of support plates fixedly connected to the outer wall of the push-back portion, the support plates are evenly arranged on the outer wall of the push-back portion, a transmission rod is arranged outside the support plate, one end of the transmission rod penetrates the support plate and is rotatably connected to the penetrated portion, the outer walls of the transmission rod on both sides of the support plate are fixedly connected with a plurality of evenly arranged polishing plates, the outer wall of the traction portion is fixedly connected with a moving gear, the outer walls of the transmission rod are fixedly connected with a follower gear, and the follower gears are meshed with the moving gear.

[0008] Preferably, the polishing plates are all spiral structures, and the spiral directions of the polishing plates located on both sides of the support plate are opposite.

[0009] Preferably, a pair of rear guide rings are fixedly connected to the outer wall of the rear push portion, and a pair of front guide rings corresponding to the rear guide rings are fixedly connected to the outer wall of the traction portion.

[0010] A method for processing a semiconductor clean tube, the method adopts any one of the semiconductor clean tube production equipment to produce, the method comprising the following steps: S1: Finishing rolling: Place the mother tube in the finishing mill, set the rolling temperature of the finishing rolling to 800-900℃, the rolling speed to 1-2m / s, the reduction to 10%-20%, and obtain a clean tube through multiple rolling passes, so that the outer diameter dimensional accuracy of the clean tube reaches 0.2mm, and the wall thickness uniformity deviation is controlled within 0.1mm. At the same time, refine the internal grain structure of the clean tube and reduce the inner and outer surface roughness Ra value of the tube body to no more than 0.8μm; S2: Cold drawing: The cold drawing is carried out by using a die, and the working surface roughness Ra value of the cold drawing die does not exceed 0.4μm. The clean tube after fine rolling is cold drawn, and the diameter reduction of cold drawing is controlled at 5%-15%, and the wall reduction is controlled at 3%-8%; S3: Cleaning oil stains: Use ultrasonic cleaning equipment to clean the clean tube after cold drawing to remove oil stains and impurities attached to the surface of the clean tube. After cleaning, use hot air circulation drying at a drying temperature of 60-80℃ to ensure that there is no residual cleaning liquid on the surface of the clean tube; S4: Bright annealing: Put the clean tube after cleaning the oil into a bright annealing furnace, fill the annealing furnace with protective gas, the protective gas is high-purity argon or high-purity nitrogen with a purity of not less than 99.9%, set the annealing temperature to 1000-1100°C, and the annealing time is 30-60 minutes; S5: Straightening: Use straightening equipment to straighten the clean tube after bright annealing to ensure that the straightness of the clean tube reaches the accuracy requirement of no more than 0.5mm per meter; S6: Mechanical grinding: Mechanically grind the straightened clean pipe to further reduce the Ra value of the inner and outer surface roughness of the clean pipe to no more than 0.1μm; S7: Electrolytic polishing: Place the mechanically ground clean pipe in the electrolytic polishing tank, and insert the push-back part and the traction part into the clean pipe. The push-back part and the traction part are moved in the clean pipe by the operation of the motor to assist in polishing the inner wall of the clean pipe, so as to further improve the finish of the inner and outer surfaces of the clean pipe, reduce the surface roughness Ra value to no more than 0.05μm, and remove the microscopic unevenness of the surface of the clean pipe; S8: Pure water cleaning: Use ultrapure water with a resistivity of not less than 18.2MΩ・cm to rinse the clean pipe multiple times to ensure that the surface of the clean pipe is clean and free of residue.

[0011] Preferably, the method further comprises immersing the electropolished clean pipe in a solution containing nitric acid and sodium dichromate for passivation, wherein the nitric acid concentration is 20%-30%, the sodium dichromate concentration is 5%-10%, the passivation treatment temperature is controlled at 40-60°C, and the passivation time is 10-20 minutes, thereby forming a dense passivation film on the surface of the clean pipe to enhance the corrosion resistance of the clean pipe.

[0012] Preferably, benzotriazole is further added to the solution in an amount of 0.5%-1.5% of the total volume of the solution, which works in conjunction with the solution to improve the quality and stability of the passivation film on the surface of the clean pipe.

[0013] Preferably, the method further includes transferring the clean pipe after washing with pure water into a dust-free room, and packaging the clean pipe with a sealed packaging material to prevent the clean pipe from being contaminated during storage and transportation.

[0014] Compared with the prior art, the present invention has the following beneficial effects: 1. The present invention is provided with a push-back part, a traction part, and front wheels and rear wheels hinged on the front and rear connecting plates through torsion springs, and the front wheels and the rear wheels are arranged obliquely and in opposite directions, so that when the motor drives the traction part to rotate, the traction part and the push-back part rotate relatively, so that the inclined front wheels and rear wheels rotate on the inner wall of the clean pipe, providing forward power for the traction part and the push-back part, and spiral polishing plates with opposite spiral directions are arranged on both sides of the support plate, and these polishing plates are linked by the transmission rod, the slave gear and the moving gear on the traction part, so that the polishing plates can rotate inside the clean pipe and move along the length direction of the pipe, and assist in polishing the inner wall of the pipe, thereby increasing the polishing effect of the clean pipe.

[0015] 2. In the present invention, the spiral polishing plates with opposite spiral directions are arranged on both sides of the support plate. The spiral structure and the opposite spiral directions ensure that all parts of the tube wall can be fully polished, avoiding the occurrence of polishing dead corners, and effectively improving the smoothness of the inner wall of the clean tube, so that it can better meet the strict requirements of high cleanliness and low roughness of clean tubes for semiconductors.

[0016] 3. The present invention, through a series of processing steps from fine rolling to pure water cleaning, in combination with special passivation treatment, synergistic effect of adding benzotriazole and final clean room packaging operation, comprehensively guarantees the high-quality output of clean tubes for semiconductors, so that the clean tubes have the characteristics of high-precision size, high surface finish, good corrosion resistance and no pollution throughout the process, which can perfectly meet the stringent requirements of semiconductor manufacturing for clean tubes, and effectively help to improve the stability of semiconductor manufacturing process and the yield rate of products. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a structural schematic diagram of the present invention; Figure 2 is a cross-sectional view of the push-back portion of the present invention; Figure 3 It is a schematic diagram of the structure of the polishing plate in the present invention; Figure 4 The figure is a schematic flow chart of the processing method of the clean pipe in the present invention.

[0018] In the figure: 1. rear pusher; 2. traction unit; 3. rear connecting plate; 4. rear connecting rod; 5. rear wheel; 6. front connecting plate; 7. front connecting rod; 8. front wheel; 9. motor; 10. support plate; 11. transmission rod; 12. polishing plate; 13. moving gear; 14. driven gear; 15. rear guide ring; 16. front guide ring. DETAILED DESCRIPTION

[0019] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0020] by Figures 1 to 3As shown, a production equipment for a clean pipe for semiconductors comprises a rear push portion 1, the front end of the rear push portion 1 is rotatably connected to a traction portion 2, the interiors of the rear push portion 1 and the traction portion 2 are both hollow, a plurality of evenly arranged rear connecting plates 3 are fixedly connected to the outer wall of the rear pushing portion 1, a pair of rear connecting rods 4 are hinged to the outer walls of the rear connecting plates 3 through torsion springs, a rear wheel 5 is rotatably connected to the opposite side of the rear connecting rods 4, a plurality of evenly arranged front connecting plates 6 are fixedly connected to the outer wall of the traction portion 2, a pair of front connecting rods 7 are hinged to the outer walls of the front connecting plates 6 through torsion springs, a front wheel 8 is rotatably connected to the opposite side of the front connecting rods 7, the front wheel 8 and the rear wheel 5 are both inclined, and the inclination directions of the front wheel 8 and the rear wheel 5 are opposite, a motor 9 is fixedly connected to the inner wall of the rear pushing portion 1, the main shaft of the motor 9 is synchronously rotatably connected to the traction portion 2, and an auxiliary mechanism for assisting in polishing the inner wall of the clean pipe is arranged on the outer wall of the rear pushing portion 1.

[0021] The auxiliary mechanism includes a plurality of support plates 10 fixedly connected to the outer wall of the push-back portion 1, the support plates 10 are evenly arranged on the outer wall of the push-back portion 1, a transmission rod 11 is arranged outside the support plate 10, one end of the transmission rod 11 penetrates the support plate 10 and is rotatably connected to the penetrated portion, and the outer walls of the transmission rod 11 on both sides of the support plate 10 are fixedly connected with a plurality of evenly arranged polishing plates 12, the polishing plates 12 are all spiral structures, and the spiral directions of the polishing plates 12 on both sides of the support plate 10 are opposite; the outer wall of the traction portion 2 is fixedly connected with a moving gear 13, the outer wall of the transmission rod 11 is fixedly connected with a slave gear 14, and the slave gear 14 is meshed with the moving gear 13.

[0022] Specifically, the spiral polishing plates 12 with opposite spiral directions are arranged on both sides of the support plate 10. The spiral structure and the opposite spiral directions ensure that all parts of the tube wall can be fully polished, avoiding polishing dead corners, and effectively improving the smoothness of the inner wall of the clean tube, so that it can better meet the strict requirements of high cleanliness and low roughness of clean tubes for semiconductors.

[0023] Specifically, the rear push part 1 and the traction part 2 are inserted into the clean pipe, and then the traction part 2 is driven to rotate by the operation of the motor 9, and the traction part 2 is connected to the rear push part 1 for rotation. Therefore, at this time, the traction part 2 and the rear push part 1 rotate relative to each other, and the rotation of the traction part 2 and the rear push part 1 will drive the front connecting plate 6 and the rear connecting plate 3 to rotate together, so that the front connecting plate 6 and the rear connecting plate 3 drive the front wheel 8 and the rear wheel 5 to rotate through the front connecting rod 7 and the rear connecting rod 4, providing forward power for the traction part 2 and the rear push part 1, and spiral polishing plates 12 with opposite spiral directions are arranged on both sides of the support plate 10. The rotation of the traction part 2 will also synchronously drive the driven gear 13 to rotate together, and the rotation of the driven gear 13 drives the driven gear 14 to rotate, so that the driven gear 14 drives the transmission rod 11 to rotate, so that the transmission rod 11 drives the polishing plate 12 to rotate, so that the polishing plate 12 can rotate inside the clean pipe and move along the length direction of the pipe, and polish the inner wall of the pipe to assist, thereby increasing the polishing effect of the clean pipe.

[0024] Furthermore, a pair of rear guide rings 15 are fixedly connected to the outer wall of the rear push portion 1 , and a pair of front guide rings 16 corresponding to the rear guide rings 15 are fixedly connected to the outer wall of the traction portion 2 .

[0025] Specifically, when the front guide ring 16 and the rear guide ring 15 move with the traction part 2 and the rear push part 1 , they can disturb the solution inside the clean pipe, thereby increasing the contact effect between the solution and the clean pipe.

[0026] by Figure 4 As shown, a method for processing a semiconductor clean tube is produced by using the aforementioned semiconductor clean tube production equipment, and the method comprises the following steps: S1: Finishing rolling: Place the mother tube in the finishing mill, set the rolling temperature of the finishing rolling to 800-900℃, the rolling speed to 1-2m / s, the reduction to 10%-20%, and obtain a clean tube through multiple rolling passes, so that the outer diameter dimensional accuracy of the clean tube reaches 0.2mm, and the wall thickness uniformity deviation is controlled within 0.1mm. At the same time, refine the internal grain structure of the clean tube and reduce the inner and outer surface roughness Ra value of the tube body to no more than 0.8μm; S2: Cold drawing: The cold drawing is carried out by using a die, and the working surface roughness Ra value of the cold drawing die does not exceed 0.4μm. The clean tube after fine rolling is cold drawn, and the diameter reduction of cold drawing is controlled at 5%-15%, and the wall reduction is controlled at 3%-8%; S3: Cleaning oil stains: Use ultrasonic cleaning equipment to clean the clean tube after cold drawing to remove oil stains and impurities attached to the surface of the clean tube. After cleaning, use hot air circulation drying at a drying temperature of 60-80℃ to ensure that there is no residual cleaning liquid on the surface of the clean tube; S4: Bright annealing: Put the clean tube after cleaning the oil into the bright annealing furnace, fill the annealing furnace with protective gas, the protective gas is high-purity argon or high-purity nitrogen with a purity of not less than 99.9%, set the annealing temperature to 1000-1100℃, and the annealing time is 30-60 minutes; S5: Straightening: Use straightening equipment to straighten the clean tube after bright annealing to ensure that the straightness of the clean tube reaches the accuracy requirement of no more than 0.5mm per meter; S6: Mechanical grinding: Mechanically grind the straightened clean pipe to further reduce the Ra value of the inner and outer surface roughness of the clean pipe to no more than 0.1μm; S7: electrolytic polishing: the clean pipe after mechanical grinding is placed in the electrolytic polishing tank, and the push-back part 1 and the traction part 2 are inserted into the clean pipe, and the motor 9 is operated to make the push-back part 1 and the traction part 2 move in the clean pipe to assist in polishing the inner wall of the clean pipe, so as to further improve the finish of the inner and outer surfaces of the clean pipe, reduce the surface roughness Ra value to no more than 0.05μm, and remove the microscopic unevenness of the surface of the clean pipe; S8: Pure water cleaning: Use ultrapure water with a resistivity of not less than 18.2MΩ・cm to rinse the clean pipe multiple times to ensure that the surface of the clean pipe is clean and free of residue.

[0027] The process also includes immersing the electropolished clean pipe in a solution containing nitric acid and sodium dichromate for passivation, wherein the nitric acid concentration is 20%-30%, the sodium dichromate concentration is 5%-10%, the passivation treatment temperature is controlled at 40-60°C, and the passivation time is 10-20 minutes, thereby forming a dense passivation film on the surface of the clean pipe to enhance the corrosion resistance of the clean pipe.

[0028] Benzotriazole is also added to the solution, with the added amount accounting for 0.5%-1.5% of the total volume of the solution, which works synergistically with the solution to improve the quality and stability of the passivation film on the surface of the clean pipe.

[0029] The method also includes transferring the clean pipe after being cleaned with pure water into a dust-free room and packaging the clean pipe with sealed packaging materials to prevent the clean pipe from being contaminated during storage and transportation.

[0030] Working principle: This embodiment provides a production equipment for a clean pipe for semiconductors, wherein the push back part 1 and the traction part 2 are inserted into the clean pipe, and then the traction part 2 is driven to rotate by the operation of the motor 9, and the traction part 2 is connected to the push back part 1 in rotation. Therefore, at this time, the traction part 2 and the push back part 1 rotate relative to each other, and the rotation of the traction part 2 and the push back part 1 will drive the front connecting plate 6 and the rear connecting plate 3 to rotate together, so that the front connecting plate 6 and the rear connecting plate 3 drive the front wheel 8 and the rear wheel 5 to rotate through the front connecting rod 7 and the rear connecting rod 4, providing forward power for the traction part 2 and the push back part 1, and spiral polishing plates 12 with opposite spiral directions are arranged on both sides of the support plate 10, and the rotation of the traction part 2 will also synchronously drive the moving gear 13 to rotate together, and the rotation of the moving gear 13 drives the rotation of the slave gear 14, so that the slave gear 14 drives the transmission rod 11 to rotate, so that the transmission rod 11 drives the polishing plate 12 to rotate, so that the polishing plate 12 can rotate inside the clean pipe and move along the length direction of the pipe, and assist in polishing the inner wall of the pipe, thereby increasing the polishing effect of the clean pipe.

[0031] The embodiments of the present invention disclose preferred embodiments, but are not limited thereto. A person skilled in the art can easily understand the spirit of the present invention based on the above embodiments and make different extensions and changes. However, as long as they do not deviate from the spirit of the present invention, they are all within the protection scope of the present invention.

Claims

1. A production equipment for a semiconductor clean tube, characterized in that: The invention comprises a rear push part (1), the front end of which is rotatably connected to a traction part (2), the interiors of the rear push part (1) and the traction part (2) are both hollow, the outer wall of the rear push part (1) is fixedly connected to a plurality of evenly arranged rear connecting plates (3), the outer walls of the rear connecting plates (3) are hinged to a pair of rear connecting rods (4) via torsion springs, the opposite sides of the rear connecting rods (4) are rotatably connected to rear wheels (5), the outer wall of the traction part (2) is fixedly connected to a plurality of evenly arranged front connecting plates (6), the front connecting plates (6) are hinged to the outer walls of the rear connecting plates (3) via torsion springs, the rear wheels (5) are rotatably connected to the opposite sides of the rear connecting rods (4), The outer wall of the connecting plate (6) is hinged with a pair of front connecting rods (7) via a torsion spring, and the front connecting rods (7) are rotatably connected to the opposite side thereof. The front wheel (8) and the rear wheel (5) are both inclined, and the inclination directions of the front wheel (8) and the rear wheel (5) are opposite to each other. The inner wall of the rear push portion (1) is fixedly connected with a motor (9), and the main shaft of the motor (9) is synchronously rotatably connected with the traction portion (2). An auxiliary mechanism for assisting in polishing the inner wall of the clean pipe is arranged on the outer wall of the rear push portion (1).

2. The production equipment of a semiconductor clean tube according to claim 1, characterized in that: The auxiliary mechanism comprises a plurality of support plates (10) fixedly connected to the outer wall of the push-back portion (1), the support plates (10) being evenly arranged on the outer wall of the push-back portion (1), a transmission rod (11) being arranged outside the support plate (10), one end of the transmission rod (11) passing through the support plate (10) and being rotatably connected to the penetration point, a plurality of evenly arranged polishing plates (12) being fixedly connected to the outer walls of the transmission rod (11) located on both sides of the support plate (10), a moving gear (13) being fixedly connected to the outer wall of the traction portion (2), a follower gear (14) being fixedly connected to the outer wall of the transmission rod (11), and the follower gear (14) being meshed with the moving gear (13).

3. The production equipment of a semiconductor clean tube according to claim 2, characterized in that: The polishing plates (12) are all spiral structures, and the spiral directions of the polishing plates (12) located on both sides of the support plate (10) are opposite.

4. The production equipment of a semiconductor clean tube according to claim 2, characterized in that: The outer wall of the rear push portion (1) is fixedly connected to a pair of rear guide rings (15), and the outer wall of the traction portion (2) is fixedly connected to a pair of front guide rings (16) corresponding to the rear guide rings (15).

5. A method for processing a semiconductor clean tube, the method adopting a semiconductor clean tube production equipment according to any one of claims 1 to 4, characterized in that: The method comprises the following steps: S1: Finishing rolling: Place the mother tube in the finishing mill, set the rolling temperature of the finishing rolling to 800-900℃, the rolling speed to 1-2m / s, the reduction to 10%-20%, and obtain a clean tube through multiple rolling passes, so that the outer diameter dimensional accuracy of the clean tube reaches 0.2mm, and the wall thickness uniformity deviation is controlled within 0.1mm. At the same time, refine the internal grain structure of the clean tube and reduce the inner and outer surface roughness Ra value of the tube body to no more than 0.8μm; S2: Cold drawing: The cold drawing is carried out by using a die, and the working surface roughness Ra value of the cold drawing die does not exceed 0.4μm. The clean tube after fine rolling is cold drawn, and the diameter reduction of cold drawing is controlled at 5%-15%, and the wall reduction is controlled at 3%-8%; S3: Cleaning oil stains: Use ultrasonic cleaning equipment to clean the clean tube after cold drawing to remove oil stains and impurities attached to the surface of the clean tube. After cleaning, use hot air circulation drying at a drying temperature of 60-80℃ to ensure that there is no residual cleaning liquid on the surface of the clean tube; S4: Bright annealing: Put the clean tube after cleaning the oil into a bright annealing furnace, fill the annealing furnace with protective gas, the protective gas is high-purity argon or high-purity nitrogen with a purity of not less than 99.9%, set the annealing temperature to 1000-1100°C, and the annealing time is 30-60 minutes; S5: Straightening: Use straightening equipment to straighten the clean tube after bright annealing to ensure that the straightness of the clean tube reaches the accuracy requirement of no more than 0.5mm per meter; S6: Mechanical grinding: Mechanically grind the straightened clean pipe to further reduce the Ra value of the inner and outer surface roughness of the clean pipe to no more than 0.1μm; S7: electrolytic polishing: placing the mechanically ground clean pipe in an electrolytic polishing tank, inserting the push-back portion (1) and the traction portion (2) into the clean pipe, and operating the motor (9) to move the push-back portion (1) and the traction portion (2) in the clean pipe to assist in polishing the inner wall of the clean pipe, thereby further improving the finish of the inner and outer surfaces of the clean pipe, reducing the surface roughness Ra value to no more than 0.05 μm, and removing the microscopic unevenness of the surface of the clean pipe; S8: Pure water cleaning: Use ultrapure water with a resistivity of not less than 18.2MΩ・cm to rinse the clean pipe multiple times to ensure that the surface of the clean pipe is clean and free of residue.

6. The method for processing a semiconductor clean tube according to claim 5, characterized in that: The process also includes immersing the electropolished clean pipe in a solution containing nitric acid and sodium dichromate for passivation, wherein the nitric acid concentration is 20%-30%, the sodium dichromate concentration is 5%-10%, the passivation treatment temperature is controlled at 40-60°C, and the passivation time is 10-20 minutes, thereby forming a dense passivation film on the surface of the clean pipe to enhance the corrosion resistance of the clean pipe.

7. The method for processing a semiconductor clean tube according to claim 6, characterized in that: Benzotriazole is also added to the solution in an amount of 0.5%-1.5% of the total volume of the solution, which works in conjunction with the solution to improve the quality and stability of the passivation film on the surface of the clean pipe.

8. The method for processing a semiconductor clean tube according to claim 5, characterized in that: The method also includes transferring the clean pipe after being cleaned with pure water into a dust-free room and packaging the clean pipe with sealed packaging materials to prevent the clean pipe from being contaminated during storage and transportation.

Citation Information

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