1-bit dual-polarization transmission array antenna unit applied to 5G millimeter wave communication relay

Abstract

The invention relates to a 1-bit dual-polarization transmission array antenna unit applied to a 5G millimeter wave communication relay, which is suitable for the field of mobile communication, and comprises a pair of receiving / transmitting antenna units which are symmetrically arranged in an upper and lower structure overturning manner, and a single receiving / transmitting antenna unit comprises four groups of double-layer stacked patch units surrounded by cavities, the device comprises a power divider, a power division network formed by a strip line, a 1-bit digital phase shifter formed by a 3-dB directional coupler, two PIN diode switches connected in series at the tail end of the phase shifter, and a capacitive coupling structure. The patch and the power division network, the power division network and the PIN diode, and the power division network and the capacitive coupling structure are connected through vertical metalized via holes; by changing the states of the two PIN diode switches of the receiving / transmitting antenna at the same time, the phase shifter can provide two phase changes of 0 degree and 180 degrees; according to the invention, two PIN diodes are utilized to control four groups of patch antenna units at the same time, the high-precision beam scanning characteristic in a 1-bit dual-polarization two-dimensional plane is realized, the number of active devices is reduced, and the loss and power consumption of the antenna units are reduced.

Description

Technical Field

[0001] The present invention belongs to the field of antenna design of wireless communication technology, and in particular relates to a 1-bit dual-polarization transmission array antenna unit applied to 5G millimeter wave communication relay. Background Art

[0002] The transmission array antenna is a high-gain air-fed antenna that combines array antenna theory with geometric optics principles. This antenna can achieve high-gain radiation through a relatively simple planar microstrip structure, and has received extensive attention in the fields of mobile communications, earth remote sensing, space power synthesis, terahertz imaging, etc. The application of traditional transmission arrays is usually restricted by problems such as complex unit structure, narrow bandwidth, low aperture efficiency, and high antenna profile. In the field of mobile communications, power consumption is one of the important indicators for base station antennas. With the development of reconfigurable technology, active devices such as PIN diodes are gradually used in the reconfigurable design of base station antennas, but this also brings about an increase in the overall power consumption of the antenna and an increase in insertion loss. The traditional transmission array itself faces a large transmission loss, which further increases the energy loss of the transmission array antenna. In summary, a low-power, low-loss, broadband and high-gain beam scanning transmission array antenna has a good application prospect. Summary of the invention

[0003] In order to overcome the shortcomings of the above-mentioned prior art, the purpose of the present invention is to provide a 1-bit dual-polarization transmission array antenna unit applied to 5G millimeter wave communication relay, which uses two PIN diode switches to realize the dual-polarization beam scanning function in a 2D plane, while ensuring the antenna working bandwidth, aperture efficiency and pointing accuracy, while reducing the overall insertion loss of the antenna and reducing the power consumption of the antenna.

[0004] In order to achieve the above object, the technical solution adopted by the present invention is:

[0005] A 1-bit dual-polarization transmission array antenna unit for 5G millimeter wave communication relay, the antenna unit includes a transmitting and receiving antenna with exactly the same structure, the transmitting and receiving antennas are connected by a capacitive coupling structure, and are symmetrical about the x-axis direction at the geometric center of the antenna unit by 180 degrees;

[0006] A single receiving or transmitting antenna includes a plurality of upper-layer patches and a plurality of lower-layer patches, wherein the upper-layer patches and the lower-layer patches are arranged along the y-axis direction respectively; the upper-layer patches and the lower-layer patches are stacked together one by one along the z-axis direction and are located in a cavity surrounded by a plurality of first metallized vias;

[0007] There are cascaded power division networks and 1-bit phase shifters below the lower patch, and the lower patch is connected to the power division network through a patch feeding probe; two branches of the 1-bit phase shifter are respectively connected in series with a PIN diode switch through the feeding probe, and the capacitive coupling structure is cascaded to the end of the 1-bit phase shifter through the sixth metallized via.

[0008] In one embodiment, the antenna unit as a whole is rotated 180° symmetrically about the x-axis at the antenna geometric center, and the antenna unit is divided into transmitting and receiving antennas with completely the same structure at half the height of the antenna unit.

[0009] In one embodiment, the upper patch is located at the hollow position of the first copper clad layer, the lower patch is located at the hollow position of the second copper clad layer, the upper patch and the lower patch are stacked together, and a cavity is formed by the first metallized vias at the edges of the hollow position; the two PIN diode switches are arranged at the middle hollow position of the first copper clad layer to control the state of the 1-bit phase shifter.

[0010] In one embodiment, the shape of the upper patch and the lower patch is a rectangle or a deformation of a rectangle. The two patches are stacked and placed in the center of a cavity formed by a first metallized via. There is a dielectric gap between the two layers of patches and between the patches and the cavity. The deformation of the rectangle includes: opening a notch on one or several sides of the rectangle to form a groove portion, or connecting an extension portion.

[0011] In one embodiment, a third copper clad layer, a fourth copper clad layer, a fifth copper clad layer and a sixth copper clad layer are sequentially arranged below the second copper clad layer; the third copper clad layer serves as a floor of the patch, is connected to the first copper clad layer through a third metallized via, forms a cavity around the patch, and provides grounding for the PIN diode switch;

[0012] The fourth copper clad layer, the fifth copper clad layer and the sixth copper clad layer constitute a transmission line structure of the strip line; wherein the fourth copper clad layer and the sixth copper clad layer serve as the floor of the strip line, are connected together through a plurality of fifth metallized vias, and are connected to the third copper clad layer through a plurality of fourth metallized vias, so as to ensure the continuity of the floor structure; the fifth copper clad layer is composed of the power division network and the 1-bit phase shifter; the plurality of fifth metallized vias are respectively located on both sides of the power division network, so as to limit the energy around the strip line and suppress the generation of the parallel plate waveguide mode; the starting end of the power division network is connected to the lower patch through the second metallized via, and the end of the 1-bit phase shifter is connected to the capacitive coupling structure through the sixth metallized via.

[0013] In one embodiment, the capacitive coupling structure is arranged at a hollow position on the sixth copper cladding layer.

[0014] In one embodiment, the 1-bit phase shifter is composed of a 3-dB directional coupler with an output port short-circuited or open-circuited. The two output ports of the 1-bit phase shifter are respectively connected to two microstrip lines of the first copper clad layer through fourth metallized vias. A PIN diode switch is connected in series on each microstrip line. Each PIN diode switch has two states, closed and open, to control the on-off between the output port of the 1-bit phase shifter and the ground. When the PIN diode switch is closed, the output port of the 1-bit phase shifter is short-circuited to the ground. When the PIN diode switch is open, the output port of the 1-bit phase shifter is open.

[0015] In one embodiment, two input ports of the 1-bit phase shifter are cascaded with a power division network and a capacitive coupling structure respectively.

[0016] In one embodiment, the orthogonally polarized capacitive coupling structures of the transceiver antennas are placed relative to each other; the upper patch and the lower patch resonate at two similar operating frequencies respectively, and the two frequency points are combined to obtain a wider operating bandwidth, thereby broadening its operating bandwidth.

[0017] In one embodiment, the patch of the receiving antenna receives electromagnetic wave energy in the free space, and the energy enters the power division network through the patch feeding probe. The power division network combines the energy of several groups of patches and feeds it into the 1-bit phase shifter. After adding a 1-bit phase through the 1-bit phase shifter, the electromagnetic wave energy is fed into the capacitive coupling structure and coupled to the power division network of the transmitting antenna. The power division network of the transmitting antenna divides the energy into several parts and feeds them into several groups of patches of another polarized transmitting antenna, and finally radiates into the free space.

[0018] Compared with the prior art, the present invention has the following beneficial effects:

[0019] 1) 1-bit quantization can achieve ±45° beam scanning in a two-dimensional plane.

[0020] 2) Dual linear polarization, and the scanning directions of the two polarization beams can be adjusted independently.

[0021] 3) Using fewer PIN diodes reduces the insertion loss of the unit, reduces the difficulty of designing the control circuit, and reduces the overall power consumption of the antenna array.

[0022] 4) The unit structure is simple and the stripline phase shifter is used to reduce the production cost of the antenna. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a three-dimensional structural decomposition diagram of a preferred embodiment of the present invention.

[0024] Figure 2 Schematic diagram of the layered structure and vias of a preferred embodiment of the present invention.

[0025] Figure 3 FIG. 4 is a top view of the first copper clad layer of the antenna unit in a specific implementation manner.

[0026] Figure 4 FIG. 4 is a top view of the second copper clad layer of the antenna unit in a specific implementation manner.

[0027] Figure 5 FIG. 4 is a top view of the third and fourth copper clad layers of the antenna unit in a specific implementation manner.

[0028] Figure 6 FIG. 4 is a top view of the fifth copper clad layer of the antenna unit in a specific implementation manner.

[0029] Figure 7 FIG. 4 is a top view of the sixth copper clad layer of the antenna unit in a specific implementation manner.

[0030] Figure 8 1 is an insertion loss curve of the antenna unit in two states in a specific implementation manner.

[0031] Fig. 9 ] is a phase curve of the two states of the antenna unit in a specific implementation manner.

[0032] Fig.10 is the |S11| curve of the antenna unit in two states in a specific implementation manner.

[0033] Fig.11 ] are cross-polarization curves of the antenna unit in two states in a specific implementation manner. DETAILED DESCRIPTION

[0034] The embodiments of the present invention are described in detail below with reference to the accompanying drawings and examples.

[0035] As a preferred embodiment of the present invention, the three-dimensional metal structure decomposition diagram and layered schematic diagram of the 1-bit dual-polarization transmission array antenna unit applied to 5G millimeter wave communication relay of the present invention are as follows: Figure 1 and Figure 2 shown.

[0036] Combination Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 and Figure 7The antenna unit of the present invention comprises a transmitting and receiving antenna with exactly the same structure, as well as a power division network 5 and a 1-bit phase shifter 6 and other structures, wherein the transmitting and receiving antennas are connected by a capacitive coupling structure 11, and are symmetrical when rotated 180° about the x-axis direction at the geometric center of the antenna unit; further preferably, the antenna unit of the present invention as a whole is symmetrical when rotated 180° about the x-axis at the geometric center of the antenna, and the antenna unit is divided into transmitting and receiving antennas with exactly the same structure at half the height of the antenna unit, and the upper and lower structures of the transmitting and receiving antennas are flipped and placed symmetrically. In the following description, for ease of expression, half the height of the antenna unit is defined as "lower", and the transmitting and receiving antennas on both sides thereof are defined as "upper", that is, the part close to half the height of the antenna unit is lower, and the part away from half the height of the antenna unit is upper.

[0037] The transceiver antenna of the present invention is a receiving antenna and a transmitting antenna. The receiving antenna and the transmitting antenna have exactly the same structure. A single receiving or transmitting antenna includes a double-layer stacked patch unit surrounded by a cavity. The double-layer stacked patch unit is a plurality of upper patches 1 and a plurality of lower patches 2. This embodiment shows a total of 4 groups of double-layer stacked patch units. In the antenna unit, each upper patch 1 and each lower patch 2 are arranged along the y-axis direction. And the upper patch 1 and the lower patch 2 are stacked together one by one along the z-axis direction, and are located in a cavity surrounded by a plurality of first metallized vias 3.

[0038] The power division network 5 and the 1-bit phase shifter 6 are cascaded and located below the lower patch 2. The power division network 5 is connected to the lower patch 2 through the patch feeding probe 4, that is, connected to four groups of double-layer stacked patch units, and cascaded with the 1-bit phase shifter 6 after four-in-one combination. The two branches of the 1-bit phase shifter 6 are respectively connected in series with a PIN diode switch 7 through the feeding probe, and the capacitive coupling structure 11 is cascaded to the end of the 1-bit phase shifter 6 through the sixth metallized via 12.

[0039] Through the above structure, by simultaneously changing the states of the two PIN diode switches 7 of the receiving antenna and the transmitting antenna, the 1-bit phase shifter 6 can provide two phase changes of 0° and 180°. Therefore, this embodiment uses two PIN diode switches 7 to simultaneously control four groups of double-layer stacked patch units, thereby achieving a 1-bit dual-polarization high-precision beam scanning characteristic in a 2D plane, reducing the number of active devices, and reducing the loss and power consumption of the antenna unit.

[0040] The complete working process and principle of the present invention are:

[0041] The upper patch 1 and the lower patch 2 of the receiving antenna receive electromagnetic wave energy in free space, and the energy enters the power division network 5 through the patch feeding probe 4. The power division network 5 combines the energy of each group of patches and feeds it into the 1-bit phase shifter 6. After adding a 1-bit phase (0° or 180°) through the 1-bit phase shifter 6, the electromagnetic wave energy is fed into the capacitive coupling structure 11 and coupled to the power division network 5 of the transmitting antenna. The power division network 5 of the transmitting antenna divides the energy into several parts and feeds them into several groups of patches of another polarized transmitting antenna, and finally radiates to the free space. The present invention adopts 1-bit quantization, and can realize ±45° beam scanning in a two-dimensional plane.

[0042] Among them, the transmitting and receiving antennas undergo a polarization conversion, and the energy of the two polarizations of the antennas undergoes a similar propagation process. The difference is that the 1-bit phase shifters 6 through which the two polarization energies pass are located at the receiving antenna and the transmitting antenna, respectively. Thus, the present invention realizes dual-linear polarization, and the beam scanning directions of the two polarizations can be adjusted independently.

[0043] Furthermore, the present invention designs a first copper clad layer 13 and a second copper clad layer 14 for a double-layer stacked patch unit. Among them, the upper patch 1 is located at the hollow position of the first copper clad layer 13, and the lower patch 2 is located at the hollow position of the second copper clad layer 14. The upper patch 1 and the lower patch 2 are stacked together to form a double-layer stacked patch unit. The four sides of a double-layer stacked patch unit are surrounded by the first metallized via 3 at the edge of the hollow position to form a cavity. A hollow position is also set in the middle position of the first copper clad layer 13, and two PIN diode switches 7 are set in the middle hollow position of the first copper clad layer 13. The state of the 1-bit phase shifter 6 is controlled by the two PIN diode switches 7, that is, the opening and closing of the PIN diode switch 7 determines whether the end of the 1-bit phase shifter 6 is open or short-circuited to the ground. Therefore, the present invention reduces the use of PIN diode switches and reduces the insertion loss of the unit.

[0044] In an embodiment of the present invention, the shape of the upper patch 1 and the lower patch 2 can be rectangular or slightly deformed. An upper patch 1 and a lower patch 2 are stacked and placed in the center of the cavity surrounded by the first metallized via 3. There is a certain dielectric gap between the two layers of patches and between the patches and the cavity. The slight deformation referred to in this embodiment is to deform the rectangular patch, including: opening a notch on one or several sides of the rectangle to form a groove portion, or connecting an extension portion. The rectangle or its deformation not only meets the processing technology requirements, but also can be well matched with other structures.

[0045] Furthermore, the present invention also designs a third copper clad layer 15, a fourth copper clad layer 16, a fifth copper clad layer 17 and a sixth copper clad layer 18 arranged in sequence below the second copper clad layer 14. To this end, a first dielectric layer 19, a second dielectric layer 20, a third dielectric layer 21 and a fourth dielectric layer 22 are also arranged. The above four dielectric layers are arranged in sequence from top to bottom. The first copper clad layer 13 is located on the upper surface of the first dielectric layer 19, the second copper clad layer 14 is located on the upper surface of the second dielectric layer 20, and is assembled with the lower surface of the first dielectric layer 19 through the first adhesive layer 23, and the third copper clad layer 15 is located on the lower surface of the second dielectric layer 20. The fourth copper clad layer 16 is located on the upper surface of the third dielectric layer 21, and is assembled with the lower surface of the third copper clad layer 15 through the second adhesive layer 24. The fifth copper clad layer 17 is located on the upper surface of the fourth dielectric layer 22, and is assembled with the lower surface of the third dielectric layer 21 through the third adhesive layer 25, and the sixth copper clad layer 18 is located on the lower surface of the fourth dielectric layer 22. The lower surfaces of the sixth copper clad layers 18 of the transceiver antenna are assembled via a fourth adhesive layer 26 .

[0046] The third copper clad layer 15 serves as the floor of the patch, and is connected to the first copper clad layer 13 through the third metallized via 9 , forming a cavity around the patch, and providing grounding for the PIN diode switch 7 .

[0047] The fourth copper clad layer 16, the fifth copper clad layer 17 and the sixth copper clad layer 18 constitute a transmission line structure of the strip line. The fourth copper clad layer 16 and the sixth copper clad layer 18 serve as the floor of the strip line and are connected together through a plurality of fifth metallized vias 8, each of which is located on both sides of the power division network 5, so as to limit the energy around the strip line and suppress the generation of the parallel plate waveguide mode.

[0048] The floor of the strip line is also connected to the third copper clad layer 15 through a plurality of fourth metallized vias 10, thereby ensuring the continuity of the floor structure. The fourth metallized vias 10 are vias that pass through the entire antenna unit. Specifically, they can be connected through the fourth copper clad layer 16, or through the sixth copper clad layer 18, or both can be connected to the third copper clad layer 15.

[0049] The fifth copper clad layer 17 is composed of a power division network 5 and a 1-bit phase shifter 6. The starting end of the power division network 5 is connected to the lower patch 2 through the second metallized via 4, and the end of the 1-bit phase shifter 6 is connected to the capacitive coupling structure 11 through the sixth metallized via 12.

[0050] In the embodiment of the present invention, the sixth copper cladding layer 18 is hollowed out, and the capacitive coupling structure 11 is arranged at the hollowed-out position.

[0051] Further, the 1-bit phase shifter 6 of the present invention is composed of a 3-dB directional coupler with an output port short-circuited or open-circuited, and a PIN diode switch 7 is loaded on the output port. Specifically, the two output ports of the 1-bit phase shifter 6 are respectively connected to two microstrip lines of the first copper clad layer 13 through the fourth metallized via 10, each PIN diode switch 7 is connected in series to a microstrip line, and each PIN diode switch 7 has two states of closed and open, which control the connection and disconnection between the output port of the 1-bit phase shifter 6 and the ground. When the PIN diode switch 7 is closed, the output port of the 1-bit phase shifter 6 is short-circuited to the ground, and when the PIN diode switch 7 is open, the output port of the 1-bit phase shifter 6 is open.

[0052] In the embodiment of the present invention, two input ports of the 1-bit phase shifter 6 are cascaded with the power division network 5 and the capacitive coupling structure 11 respectively, and the capacitive coupling structures 11 of orthogonal polarizations of the transmitting and receiving antennas are placed opposite to each other.

[0053] The working frequency band of this embodiment is selected as 27-29 GHz, which belongs to the n257 frequency band of 5G NR.

[0054] In this embodiment, the upper patch 1 and the lower patch 2 are selected as rectangular patch units with a length of about λ g (wavelength in the medium) / 2, working in half-wavelength mode. A single transceiver / transmitter antenna includes 4 sets of double-layer stacked patch units. The power division network 5 divides the 4 sets of double-layer stacked patch units of the transceiver / transmitter unit into 1-to-4 / 4-to-1 equal power. After the 1-bit phase shifter 6 adds phase, the antenna array has the ability to scan the beam in a two-dimensional plane. Each dielectric layer is a low-loss AeroWave 300 high-frequency board, and each adhesive layer is a low-loss AeroBond 300 board.

[0055] The technical solution of the present invention is achieved in this way:

[0056] The upper patch 1 and the lower patch 2 resonate at two similar operating frequencies respectively. Combining the two frequency points can obtain a wider operating bandwidth. Placing the double-layer stacked patch inside the cavity surrounded by the metallized vias can suppress the propagation of antenna surface waves, reduce the mutual coupling between adjacent units, and thus improve the antenna's beam scanning performance. On the other hand, the stacked patch area can be relatively independent, and the area outside the cavity can be designed with DC bias and other structures, while the radiation performance of the patch will not be affected by other structures. The transmit / receive antenna of an antenna unit includes 4 groups of double-layer stacked patches. The 4 groups of stacked patches are fed by one drive and four through the power division network 5. After the power division network 5 is combined, the 1-bit phase shifter 6 is cascaded to add phase. Each 1-bit phase shifter 6 is connected to two PIN diode switches 7 in the same state. When the PIN diode switch 7 is disconnected, the terminal branch of the 1-bit phase shifter 6 is open-circuited. When the PIN diode switch 7 is closed, the terminal branch of the 1-bit phase shifter 6 is short-circuited to the ground. The two states correspond to the 0° and 180° phases of the 1-bit phase shifter, respectively. For ease of processing, the branch where the PIN diode switch 7 is located is led to the top of the antenna through a metallized via. The other port of the 1-bit phase shifter 6 is cascaded with a capacitive coupling structure 11, through which the transceiver antennas are connected together. The use of the capacitive coupling structure 11 can avoid the complicated buried hole processing and isolate the DC path of the transceiver antenna.

[0057] After the transmitting antenna undergoes a similar one-to-four equal power division, the four groups of stacked patches of the transmitting antenna are finally excited with equal amplitude and in phase. The transceiver antenna undergoes a polarization conversion through the power division network, and according to the antenna's transceiver reciprocity principle, the transmission paths of the two polarizations of the antenna are exactly the same. So far, the 1-bit dual-polarization transmission array antenna unit applied to 5G millimeter wave communication relay described in the present invention only uses four PIN diode switches 7 to realize the dual-polarization 2D beam scanning function of four groups of patch units.

[0058] Figure 8 The insertion loss curves of the unit in two states. The average insertion loss in the working frequency band is between 2-4dB, indicating that the antenna unit can effectively reradiate the received energy into the free space, and the loss caused by the unit is acceptable in practical engineering applications.

[0059] Fig. 9 is the phase shift curve of the unit in two states. Within the working frequency band, the phase difference between adjacent states of the unit is maintained in the range of 180°±20°, indicating that the antenna unit can bring lower quantization error within the working frequency band, thereby providing higher pointing accuracy and antenna gain. A certain deviation in the quantized phase is considered acceptable in actual engineering applications.

[0060] Fig.10The |S11| curves of the unit in two states. Within the working frequency band, the unit |S11| basically remains below -10dB, indicating that the antenna matching is relatively good.

[0061] Fig.11 is the cross-polarization of the unit in two states. Within the working frequency band, the unit cross-polarization is basically maintained below -15dB, indicating that the unit polarization isolation is relatively high.

[0062] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. All equivalent changes and modifications made within the scope of the claims of the present invention should fall within the scope of the claims of the present invention.

Claims

1. A 1-bit dual-polarization transmission array antenna unit applied to 5G millimeter wave communication relay, characterized in that: The antenna unit includes a transmitting and receiving antenna with completely identical structures, the transmitting and receiving antennas are connected via a capacitive coupling structure (11), and are symmetrical about the x-axis direction and rotated 180 degrees at the geometric center of the antenna unit; A single receiving or transmitting antenna comprises a plurality of upper-layer patches (1) and a plurality of lower-layer patches (2), wherein each upper-layer patch (1) and each lower-layer patch (2) are arranged along the y-axis direction; the upper-layer patches (1) and the lower-layer patches (2) are stacked together in a one-to-one correspondence along the z-axis direction and are located in a cavity surrounded by a plurality of first metallized vias (3); A cascaded power division network (5) and a 1-bit phase shifter (6) are provided below the lower patch (2); the lower patch (2) is connected to the power division network (5) via a patch feeding probe (4); two branches of the 1-bit phase shifter (6) are respectively connected in series with a PIN diode switch (7) via the feeding probe; and the capacitive coupling structure (11) is cascaded to the end of the 1-bit phase shifter (6) via a sixth metallized via (12).

2. The 1-bit dual-polarization transmission array antenna unit for 5G millimeter wave communication relay according to claim 1, characterized in that: The antenna unit as a whole is symmetrical when rotated 180° about the x-axis at the antenna geometric center, and the antenna unit is divided into transmitting and receiving antennas with completely the same structure at half the height of the antenna unit.

3. The 1-bit dual-polarization transmission array antenna unit for 5G millimeter wave communication relay according to claim 1, characterized in that: The upper patch (1) is located at a hollow position of the first copper clad layer (13), and the lower patch (2) is located at a hollow position of the second copper clad layer (14). The upper patch (1) and the lower patch (2) are stacked together, and a cavity is formed around the edges of the hollow positions through first metallized vias (3); two PIN diode switches (7) are arranged at the middle hollow position of the first copper clad layer (13) to control the state of a 1-bit phase shifter (6).

4. The 1-bit dual-polarization transmission array antenna unit for 5G millimeter wave communication relay according to claim 1 or 3, characterized in that: The upper patch (1) and the lower patch (2) are in the shape of a rectangle or a deformation of a rectangle. The two patches are stacked and placed in the center of a cavity formed by a first metallized via (3). There is a dielectric gap between the two patches and between the patches and the cavity. The deformation of the rectangle includes: notching one or more sides of the rectangle to form a groove portion, or connecting an extension portion.

5. The 1-bit dual-polarization transmission array antenna unit for 5G millimeter wave communication relay according to claim 3, characterized in that: A third copper clad layer (15), a fourth copper clad layer (16), a fifth copper clad layer (17) and a sixth copper clad layer (18) are sequentially arranged below the second copper clad layer (14); the third copper clad layer (15) serves as a floor of the patch and is connected to the first copper clad layer (13) via a third metallized via (9), forming a cavity around the patch and providing grounding for the PIN diode switch (7); The fourth copper clad layer (16), the fifth copper clad layer (17) and the sixth copper clad layer (18) constitute a transmission line structure of a strip line; wherein the fourth copper clad layer (16) and the sixth copper clad layer (18) serve as the floor of the strip line, are connected together through a plurality of fifth metallized vias (8), and are connected to the third copper clad layer (15) through a plurality of fourth metallized vias (10) to ensure the continuity of the floor structure; the fifth copper clad layer (17) is composed of the power division network (5) and the 1-bit phase shifter (6); the plurality of fifth metallized vias (8) are respectively located on both sides of the power division network (5) to limit energy around the strip line and suppress the generation of a parallel plate waveguide mode; the starting end of the power division network (5) is connected to the lower patch (2) through the second metallized via (4); and the end of the 1-bit phase shifter (6) is connected to the capacitive coupling structure (11) through the sixth metallized via (12).

6. The 1-bit dual-polarization transmission array antenna unit for 5G millimeter wave communication relay according to claim 1, characterized in that: The 1-bit phase shifter (6) is composed of a 3-dB directional coupler with an output port short-circuited or open-circuited. The two output ports of the 1-bit phase shifter (6) are respectively connected to two microstrip lines of the first copper-clad layer (13) through fourth metallized vias (10). A PIN diode switch (7) is connected in series to each microstrip line. Each PIN diode switch (7) has two states, closed and open, to control the connection between the output port of the 1-bit phase shifter (6) and the ground. When the PIN diode switch (7) is closed, the output port of the 1-bit phase shifter (6) is short-circuited to the ground. When the PIN diode switch (7) is open, the output port of the 1-bit phase shifter (6) is open.

7. The 1-bit dual-polarization transmission array antenna unit for 5G millimeter wave communication relay according to claim 6, characterized in that: In a single receiving or transmitting antenna, there are four upper patches (1) and four lower patches (2), respectively, thereby forming four groups of double-layer stacked patch units, and four PIN diode switches 7 are used to realize the dual-polarization 2D beam scanning function of the four groups of double-layer stacked patch units.

8. The 1-bit dual-polarization transmission array antenna unit for 5G millimeter wave communication relay according to claim 1, characterized in that: The two input ports of the 1-bit phase shifter (6) are cascaded with the power division network (5) and the capacitive coupling structure (11) respectively.

9. The 1-bit dual-polarization transmission array antenna unit for 5G millimeter wave communication relay according to claim 1, characterized in that: The upper patch (1) and the lower patch (2) resonate at two similar working frequencies respectively, and the two frequency points are combined to broaden the working bandwidth.

10. The 1-bit dual-polarization transmission array antenna unit for 5G millimeter wave communication relay according to claim 1, characterized in that: The patch of the receiving antenna receives electromagnetic wave energy in the free space, and the energy enters the power division network (5) through the patch feeding probe (4). The power division network (5) combines the energy of several groups of patches and feeds it into the 1-bit phase shifter (6). After adding a 1-bit phase through the 1-bit phase shifter (6), the electromagnetic wave energy is fed into the capacitive coupling structure (11) and coupled to the power division network (5) of the transmitting antenna. The power division network (5) of the transmitting antenna divides the energy into several parts and feeds them into several groups of patches of another polarized transmitting antenna, and finally radiates into the free space.

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