Semiconductor cleaning device and use method thereof

Abstract

The invention discloses a semiconductor cleaning device and a using method thereof, and relates to the technical field of semiconductor production equipment.The semiconductor cleaning device comprises a generating module, a cleaning module and a recycling module, the generating module is used for generating carbon dioxide in a supercritical state, the cleaning module is used for cleaning a semiconductor, and the recycling module communicates with the cleaning module; the carbon dioxide recovery device is used for recovering and reusing carbon dioxide after cleaning; the cleaning module comprises a hollow cleaning chamber, a cleaning table is arranged in the cleaning chamber, the cleaning table is rotationally connected into the cleaning chamber, the rotating axis is vertical, a limiting plate is arranged on the peripheral side of the top of the cleaning table, the inner wall of the limiting plate is used for abutting against the periphery of the wafer, and a jacking adsorption assembly is arranged in the cleaning table. And the jacking and adsorbing assembly is used for adsorbing and fixing the bottom surface of the wafer and jacking and lifting the wafer after the wafer is cleaned, so that the wafer is convenient to replace. The wafer cleaning method has the effect of cleaning the wafer without pollution.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor production equipment, and in particular to a semiconductor cleaning device and a method for using the same. Background Art

[0002] Cleaning is a crucial part of the semiconductor production process. During the semiconductor manufacturing process, wafers may be contaminated by impurities such as particles, metals, organic matter, and natural oxide layers. These contaminants may affect the performance, reliability, and even yield of semiconductor devices. At present, commonly used cleaning methods include wet cleaning and dry cleaning. Wet cleaning uses chemical solvents and water. Although the cleaning effect is better, it has problems such as high water consumption and chemical solvent pollution. Dry cleaning relies more on physical means such as plasma, and the equipment is complex and the cost is high. Summary of the invention

[0003] In order to improve the conventional method of cleaning wafers, which has the problems of polluting the environment and being high in cost, the present application provides a semiconductor cleaning device and a method of using the same.

[0004] On the one hand, the present application provides a semiconductor cleaning device, which adopts the following technical solution: A semiconductor cleaning device comprises a generation module, a cleaning module and a recovery module, wherein the generation module is used to generate carbon dioxide in a supercritical state and send the carbon dioxide in the supercritical state into the cleaning module, the cleaning module is used to clean the semiconductor, and the recovery module is connected to the cleaning module and is used to recover the carbon dioxide after cleaning and reuse it; The cleaning module includes a hollow cleaning chamber, in which a cleaning table is arranged. The cleaning table is rotatably connected to the cleaning chamber, and the rotation axis is vertical. A limit plate is arranged on the peripheral side of the top of the cleaning table, and the inner wall of the limit plate is used to abut against the outer periphery of the wafer. A lifting and adsorption assembly is arranged in the cleaning table, and the lifting and adsorption assembly is used to adsorb and fix the bottom surface of the wafer, and lift the wafer after the wafer is cleaned to facilitate the replacement of the wafer.

[0005] By adopting the above technical scheme, a semiconductor such as a wafer is placed on a cleaning table in a cleaning chamber, and then supercritical carbon dioxide is generated by the generation module, and the supercritical carbon dioxide is introduced into the cleaning module to thoroughly clean the surface of the wafer. The limit plate on the cleaning table effectively prevents the wafer from falling during cleaning. At the same time, the lifting and adsorption component can adsorb and fix the bottom surface of the wafer to further stabilize the wafer on the cleaning table. After the wafer is cleaned, the lifting and adsorption component can lift the wafer to facilitate the removal and replacement of the wafer. The recovery module is connected to the cleaning module, so that the cleaned carbon dioxide can be cooled and depressurized in the recovery module to precipitate the pollutants in the carbon dioxide. The separated carbon dioxide can be recycled and reused, effectively reducing the cost of cleaning.

[0006] Optionally, the lifting and adsorption assembly includes a plurality of vertical lifting rods, which are spaced apart and hollow inside. One end of the top of the lifting rod is connected to a suction nozzle, and all the suction nozzles are located at the same horizontal position. The top of the suction nozzle extends out of the cleaning table. One end of the bottom of the lifting rod is connected to a suction piece, which is used to extract air from the inside of the lifting rod so as to form a negative pressure inside the lifting rod.

[0007] By adopting the above technical solution, multiple lifting rods distributed at intervals can be used to support the wafer, and the lifting rods are hollow inside. One end of the top of the lifting rod is connected to a suction nozzle, and the bottom end is connected to a suction part. The suction part can extract the air inside the lifting rod, thereby forming a negative pressure inside the lifting rod, so that the suction nozzle can firmly adsorb and fix the wafer, thereby further fixing the position of the wafer.

[0008] Optionally, a lifting plate is provided at the bottom of the lifting rod, and the lifting plate is vertically slidably connected to the inside of the cleaning table. A driving member for driving the lifting and lowering is provided at the bottom of the lifting plate. Interconnected air guide channels are opened in the lifting plate, one end of the air guide channel is connected to each lifting rod, and the other end is connected to the suction member.

[0009] By adopting the above technical solution, when the wafer needs to be replaced, the driving part can lift all the lifting rods by lifting the lifting plate, and then lift the wafer, which is convenient for the staff to take out and replace the wafer. At the same time, the lifting plate is provided with interconnected air guide channels, so that all the lifting rods can pass through the air guide channels and finally connect with the suction part, so that one suction part can be used to connect with all the lifting rods.

[0010] Optionally, a temperature control component is provided in the cleaning chamber, and the temperature control component includes a heating and cooling coil arranged around the cleaning table to adjust the temperature inside the cleaning chamber. A temperature sensor is also provided in the cleaning chamber.

[0011] By adopting the above technical solution, a temperature control component and a temperature sensor are provided in the cleaning chamber, and the heating and cooling coils arranged around the cleaning table can adjust the temperature inside the cleaning chamber, thereby accurately controlling the temperature in the cleaning chamber, further optimizing the cleaning effect of supercritical carbon dioxide, and improving cleaning efficiency and quality.

[0012] Optionally, an ultrasonic vibration component is provided in the cleaning chamber, and the ultrasonic vibration component is installed on the inner wall of the cleaning chamber to generate ultrasonic waves during the wafer cleaning process.

[0013] By adopting the above technical solution, the ultrasonic vibration device can generate ultrasonic waves during the cleaning process, and utilize the cavitation effect and microjet effect of ultrasonic waves to further enhance the cleaning effect of supercritical carbon dioxide on the semiconductor surface.

[0014] Optionally, the recovery module includes a separation chamber, the inlet end of the separation chamber is connected to the outlet end of the cleaning chamber, the outlet end of the separation chamber is also connected to a circulation pipe, the outlet end of the circulation pipe is connected to the inlet end of the cleaning chamber, and the pollutants in the carbon dioxide are separated and precipitated by reducing the pressure on the separation chamber.

[0015] By adopting the above technical solution, the carbon dioxide that has cleaned the surface of the wafer can be cooled and reduced in pressure in the separation chamber, thereby effectively separating and precipitating pollutants in the carbon dioxide. This not only ensures the purity of the recovered carbon dioxide, but also achieves waste reduction and resource utilization, effectively reducing production costs.

[0016] Optionally, a cleaning assembly is provided in the separation chamber, and the cleaning assembly includes a first cleaning brush placed vertically close to the interior of the separation chamber, and a second cleaning brush in contact with the bottom wall of the separation chamber. A rotating rod is rotatably connected in the separation chamber, and the first cleaning brush and the second cleaning brush are both connected to the rotating rod so as to clean the residues on the inner wall and the bottom wall respectively.

[0017] By adopting the above-mentioned technical solution, the cleaning component includes a first cleaning brush that is close to the inside of the separation chamber and placed vertically, and a second cleaning brush that is in contact with the bottom wall of the separation chamber, and the first cleaning brush and the second cleaning brush are both connected to a rotating rod, which can drive the first cleaning brush and the second cleaning brush to rotate in the separation chamber, thereby being able to clean the residues on the inner wall and bottom wall of the separation chamber.

[0018] Optionally, a heating element is provided in the generating module, and the heating element is a microwave heating device or a laser heating device.

[0019] By adopting the above technical solution, the heating element in the supercritical carbon dioxide generation module can be replaced with different heating methods such as a microwave heating device or a laser heating device to adapt to different cleaning requirements and process conditions.

[0020] On the other hand, the present application provides a method for using a semiconductor cleaning device, using the semiconductor cleaning device as described above to clean a wafer, comprising the following steps: S1: placing the semiconductor to be cleaned on the cleaning table in the cleaning chamber and fixing it by a lifting adsorption assembly; S1: Start the generation module to produce supercritical carbon dioxide; S1: passing carbon dioxide in a supercritical state into a cleaning chamber to clean the surface of the semiconductor; S1: The cleaned carbon dioxide is recovered through a recovery module and reused.

[0021] By adopting the above technical solution, the surface of the wafer can be effectively cleaned by using carbon dioxide in a supercritical state, which significantly improves the wafer cleaning quality. At the same time, the carbon dioxide used to clean the wafer can be recovered in the recovery module, so that the recovered carbon dioxide can be reused, effectively saving production costs.

[0022] In summary, the present application includes at least one of the following beneficial effects: 1. By using supercritical carbon dioxide to clean the wafer surface, the wafer cleaning quality can be significantly improved, the pollution caused by chemical cleaning can be avoided, and the cost of wafer cleaning can be effectively reduced; 2. By setting a lifting and adsorption component in the cleaning table, the placement of the wafer can be further improved, and it is also convenient for the wafer to be taken and placed; 3. By arranging a first cleaning brush and a second cleaning brush that can rotate in the separation chamber of the recovery module, the dirt remaining on the inner wall of the separation chamber can be scraped off by the cleaning brushes to keep the separation chamber clean. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a schematic diagram showing the overall structure of the cleaning device in Example 1 of the present application; Figure 2 This is a schematic diagram showing the structure of the interior of the cleaning station in Example 1 of the present application; Figure 3 This is a schematic diagram showing the structure of the interior of the separation chamber in Example 1 of the present application.

[0024] Explanation of the reference numerals: 1. Generation module; 11. Supercritical carbon dioxide generation device; 12. Heating device; 13. Pressurizing device; 2. Cleaning module; 21. Cleaning chamber; 22. Delivery pipe; 23. Cleaning table; 231. Rotating assembly; 232. Limiting plate; 233. Lifting rod; 234. Adsorption nozzle; 235. Lifting plate; 236. Driving member; 237. Air guide channel; 238. Air suction member; 24. Heating and cooling coil; 25. Temperature control unit; 26. Ultrasonic vibration assembly; 3. Recovery module; 31. Separation chamber; 32. Recovery pipe; 33. Circulation pipe; 34. First cleaning brush; 35. Second cleaning brush; 36. Rotating rod; 4. Workbench; 5. Wafer. DETAILED DESCRIPTION

[0025] The following is combined with Figure 1-3 This application is described in further detail.

[0026] Embodiment 1: Embodiment 1 of the present application discloses a semiconductor cleaning device, referring to Figure 1 The semiconductor cleaning device includes a generation module 1, a cleaning module 2 and a recovery module 3, wherein the generation module 1 includes a supercritical carbon dioxide generation device 11, and the supercritical carbon dioxide generation device 11 can be externally connected to a steel cylinder filled with liquid carbon dioxide to provide or supplement the required carbon dioxide to the generation module 1. The supercritical carbon dioxide generation device 11 is also integrated with a heating device 12 and a pressurizing device 13. After the liquid carbon dioxide in the steel cylinder is introduced, it is heated and pressurized in the supercritical carbon dioxide generation device 11, so that the carbon dioxide can quickly reach a supercritical state. The generation module 1, the cleaning module 2 and the recovery module 3 can all be placed on the workbench 4.

[0027] The heating device 12 in the supercritical carbon dioxide generation device 11 can be a microwave heating device or a laser heating device. The microwave heating device and the laser heating device can be interchangeable, so that different heating methods can be used in the supercritical carbon dioxide generation module 1 as appropriate to adapt to different cleaning requirements and process conditions.

[0028] The cleaning module 2 includes a hollow cleaning chamber 21, and the wafer 5 to be cleaned is placed in the cleaning chamber 21 for cleaning. The cleaning chamber 21 is connected to the supercritical carbon dioxide generator 11 through a delivery pipe 22, and the supercritical carbon dioxide after heating and pressurization enters the cleaning chamber 21 through the delivery pipe 22. A nozzle is installed at one end of the delivery pipe 22 in the cleaning chamber 21, which can accelerate the carbon dioxide in the supercritical state to blow toward the surface of the wafer 5, so as to use the supercritical carbon dioxide to clean the fine dirt on the surface of the wafer 5.

[0029] Reference Figure 1A heating and cooling coil 24 arranged around the cleaning table 23 is installed in the cleaning chamber 21. At the same time, a temperature control unit 25 connected to the heating and cooling coil 24 is fixed at the bottom of the workbench 4. A temperature sensor is also arranged in the cleaning chamber 21. The temperature control unit 25 can detect the real-time temperature in the cleaning chamber 21 through the temperature control unit 25, and can adjust the temperature inside the cleaning chamber 21 through the heating and cooling coil 24, so as to accurately control the temperature in the cleaning chamber 21, further optimize the cleaning effect of supercritical carbon dioxide, and improve the cleaning efficiency and quality.

[0030] An ultrasonic vibration component 26 is provided in the cleaning chamber 21 and is installed on the inner wall of the cleaning chamber 21. The ultrasonic vibration component 26 can generate ultrasonic waves during the cleaning process of the wafer 5, and utilize the cavitation effect and microjet effect of ultrasonic waves to further enhance the cleaning effect of supercritical carbon dioxide on the semiconductor surface.

[0031] The recovery module 3 includes a separation chamber 31 which is also hollow. The separation chamber 31 is connected to the cleaning chamber 21 via a recovery pipe 32. The carbon dioxide from cleaning the wafer 5 enters the separation chamber 31 through the recovery pipe 32 for recovery and treatment, which facilitates the recycling of carbon dioxide and effectively saves production costs.

[0032] Reference Figure 1 and Figure 2 A cleaning table 23 is provided in the cleaning chamber 21. The cleaning table 23 is rotatably connected to the cleaning chamber 21, and the rotation axis is vertical. A rotating component 231 can be provided at the bottom of the cleaning table 23. The rotating component 231 can be a small servo motor. The output shaft of the motor is coaxially fixed to the bottom of the cleaning table 23. The cleaning table 23 is driven by the motor to rotate continuously when cleaning the wafer 5, so that the surface of the wafer 5 can be more fully contacted with the carbon dioxide in the supercritical state, thereby improving the cleaning effect of the wafer 5.

[0033] A limit plate 232 is fixed on the circumference of the top of the cleaning table 23. The inner wall of the limit plate 232 abuts against the outer circumference of the wafer 5, which can effectively prevent the wafer 5 from falling during cleaning. A plurality of vertical lifting rods 233 are arranged in the cleaning table 23. The plurality of lifting rods 233 are spaced apart and are hollow inside. A suction nozzle 234 is connected to one end of the top of the lifting rod 233. All suction nozzles 234 are located at the same horizontal position, and the top of the suction nozzle 234 can extend out of the cleaning table 23 to support the wafer 5.

[0034] A lifting plate 235 is fixed at one end of the bottom of the lifting rod 233, and all the lifting rods 233 are fixed on the lifting plate 235. The lifting plate 235 is vertically slidably connected to the inside of the cleaning table 23, and a driving member 236 is fixed at the bottom of the lifting plate 235. The driving member 236 can be an electric cylinder. An air guide channel 237 that is interconnected is opened in the lifting plate 235. One end of the air guide channel 237 is connected to each lifting rod 233, and the other end is connected to a suction member 238. The suction member 238 can be an air pump. The suction member 238 is used to extract the air inside the lifting rod 233 so as to form a negative pressure inside the lifting rod 233.

[0035] A semiconductor such as a wafer 5 is placed on the cleaning table 23 in the cleaning chamber 21, and then the generation module 1 generates carbon dioxide in a supercritical state, and the carbon dioxide in a supercritical state is introduced into the cleaning module 2 to thoroughly clean the surface of the wafer 5. The limiting plate 232 on the cleaning table 23 and the suction nozzle 234 on the lifting rod 233 can adsorb and fix the bottom surface of the wafer 5, and further stabilize the wafer 5 on the cleaning table 23. When the wafer 5 needs to be replaced, the driving member 236 can lift all the lifting rods 233 by lifting the lifting plate 235, and then lift the wafer 5, so that the staff can take out and replace the wafer 5. At the same time, the lifting plate 235 is provided with an interconnected air guide channel 237, so that all the lifting rods 233 can pass through the air guide channel 237, and finally communicate with the suction member 238, so that one suction member 238 can be used to communicate with all the lifting rods 233.

[0036] Reference Figure 1 and Figure 3 The recovery module 3 includes a separation chamber 31, the inlet end of the separation chamber 31 is connected to the outlet end of the cleaning chamber 21 through a recovery pipe 32, and the outlet end of the separation chamber 31 is also connected to a circulation pipe 33, and the outlet end of the circulation pipe 33 is connected to the inlet end of the cleaning chamber 21. The carbon dioxide that has washed the surface of the wafer 5 can be cooled and decompressed in the separation chamber 31, so as to effectively separate and precipitate pollutants in the carbon dioxide, which can not only ensure the purity of the recovered carbon dioxide, but also achieve waste reduction and resource utilization, and effectively reduce production costs.

[0037] Furthermore, a cleaning assembly is provided in the separation chamber 31, and the cleaning assembly includes a first cleaning brush 34 which is placed vertically and close to the interior of the separation chamber 31, and a second cleaning brush 35 which is in contact with the inner bottom wall of the separation chamber 31. A rotating rod 36 is rotatably connected in the separation chamber 31, and the rotating rod 36 is placed vertically. The first cleaning brush 34 and the second cleaning brush 35 are both fixedly connected to the rotating rod 36. In order to remove the residues on the inner wall and the bottom wall respectively. After the rotating rod 36 rotates, it can drive the first cleaning brush 34 and the second cleaning brush 35 to rotate in the separation chamber 31, so that the residues on the inner wall and the bottom wall of the separation chamber 31 can be removed. The rotating rod 36 can be driven by a motor to rotate automatically, or it can be rotated manually.

[0038] The implementation principle of a semiconductor cleaning device in Example 1 of the present application is as follows: a supercritical carbon dioxide generating device 11 generates carbon dioxide in a supercritical state and introduces it into a cleaning chamber 21 to thoroughly clean the surface of a wafer 5; when the wafer 5 is cleaned, the adsorption nozzle 234 can reinforce the fixation of the wafer 5; after the wafer 5 is cleaned, the lifting rod 233 can lift the wafer 5 to facilitate the removal or replacement of the wafer 5; at the same time, the carbon dioxide enters a separation chamber 31 for recovery and treatment, and the recovered carbon dioxide re-enters the cleaning chamber 21 for reuse.

[0039] Embodiment 2: Embodiment 2 of the present application discloses a method for using a semiconductor cleaning device, wherein the semiconductor cleaning device described in Embodiment 1 is used to clean a wafer 5, and the method specifically comprises the following steps: S1: placing the semiconductor to be cleaned on the cleaning table 23 of the cleaning chamber 21, starting the suction member 238 to form negative pressure inside the lifting rod 233, and fixing the bottom of the wafer 5 by the suction nozzle 234; S1: Start the generation module 1 to produce supercritical carbon dioxide; S1: introducing carbon dioxide in a supercritical state into the cleaning chamber 21 to clean the surface of the wafer 5; S1: The cleaned carbon dioxide is recovered through the recovery module 3 and reused.

[0040] The above are all preferred embodiments of the present application, and the protection scope of the present application is not limited thereto. Therefore, any equivalent changes made according to the structure, shape, and principle of the present application should be included in the protection scope of the present application.

Claims

1. A semiconductor cleaning device, characterized in that: The invention comprises a generation module (1), a cleaning module (2) and a recovery module (3), wherein the generation module (1) is used to generate carbon dioxide in a supercritical state and to feed the carbon dioxide in a supercritical state into the cleaning module (2), the cleaning module (2) is used to clean semiconductors, and the recovery module (3) is connected to the cleaning module (2) and is used to recover the carbon dioxide after cleaning and reuse it; The cleaning module (2) comprises a hollow cleaning chamber (21), wherein a cleaning table (23) is arranged in the cleaning chamber (21), wherein the cleaning table (23) is rotatably connected to the cleaning chamber (21), and the rotation axis is vertical, wherein a limit plate (232) is arranged on the circumferential side of the top of the cleaning table (23), wherein the inner wall of the limit plate (232) is used to abut against the outer circumference of the wafer (5), and wherein a lifting and adsorption component is arranged in the cleaning table (23), wherein the lifting and adsorption component is used to adsorb and fix the bottom surface of the wafer (5), and to lift the wafer (5) after the wafer (5) is cleaned, so as to facilitate the replacement of the wafer (5).

2. The semiconductor cleaning device according to claim 1, characterized in that: The lifting and adsorption assembly comprises a plurality of vertical lifting rods (233), the plurality of lifting rods (233) are spaced apart and are hollow inside, one end of the top of the lifting rod (233) is connected to an adsorption nozzle (234), all the adsorption nozzles (234) are located at the same horizontal position, the top of the adsorption nozzle (234) extends out of the cleaning table (23), and one end of the bottom of the lifting rod (233) is connected to an air suction member (238), the air suction member (238) is used to extract air inside the lifting rod (233) so as to form a negative pressure inside the lifting rod (233).

3. The semiconductor cleaning device according to claim 2, characterized in that: A lifting plate (235) is provided at the bottom of the lifting rod (233), and the lifting plate (235) is vertically slidably connected to the inside of the cleaning table (23), and a driving member (236) for driving the lifting is provided at the bottom of the lifting plate (235), and mutually connected air guide channels (237) are provided in the lifting plate (235), and one end of the air guide channel (237) is connected to each lifting rod (233), and the other end is connected to the air suction member (238).

4. The semiconductor cleaning device according to claim 1, characterized in that: A temperature control component is provided in the cleaning chamber (21), and the temperature control component comprises a heating and cooling coil (24) arranged around the cleaning table (23) so as to adjust the temperature inside the cleaning chamber (21). A temperature sensor is also provided in the cleaning chamber (21).

5. The semiconductor cleaning device according to claim 1, characterized in that: An ultrasonic vibration component (26) is provided in the cleaning chamber (21); the ultrasonic vibration component (26) is mounted on the inner wall of the cleaning chamber (21) and is used to generate ultrasonic waves during the wafer (5) cleaning process.

6. The semiconductor cleaning device according to claim 1, characterized in that: The recovery module (3) comprises a separation chamber (31), the inlet end of the separation chamber (31) being connected to the outlet end of the cleaning chamber (21), the outlet end of the separation chamber (31) being further connected to a circulation pipe (33), the outlet end of the circulation pipe (33) being connected to the inlet end of the cleaning chamber (21), and pollutants in the carbon dioxide are separated and precipitated by reducing the pressure in the separation chamber (31).

7. The semiconductor cleaning device according to claim 6, characterized in that: A cleaning assembly is arranged in the separation chamber (31), the cleaning assembly comprising a first cleaning brush (34) which is vertically placed close to the interior of the separation chamber (31), and a second cleaning brush (35) which is in contact with the bottom wall of the separation chamber (31). A rotating rod (36) is rotatably connected in the separation chamber (31), and the first cleaning brush (34) and the second cleaning brush (35) are both connected to the rotating rod (36) so as to respectively clean residues on the inner wall and the bottom wall.

8. The semiconductor cleaning device according to claim 1, characterized in that: A heating element is provided in the generating module (1), and the heating element is a microwave heating device or a laser heating device.

9. A method for using a semiconductor cleaning device, characterized in that: Cleaning a wafer using the semiconductor cleaning device as described in any one of claims 1 to 8 comprises the following steps: S1: placing the semiconductor to be cleaned on a cleaning table (23) in a cleaning chamber (21) and fixing it by a lifting and adsorption assembly; S1: starting the generation module (1) to generate supercritical carbon dioxide; S1: introducing carbon dioxide in a supercritical state into a cleaning chamber (21) to clean the surface of the semiconductor; S1: The cleaned carbon dioxide is recovered through the recovery module (3) and reused.

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