Bonding apparatus and bonding method

Abstract

The invention provides bonding equipment, which is used for aligning and bonding a first element and a second element, and comprises a pickup device used for picking up the first element to be bonded and moving the first element to be aligned and bonded with the second element; the bearing table is used for bearing the second element; and the edge temperature control device is used for heating the edge of the first element and / or the second element in the process of bonding the first element to the second element, so that the gas temperature at the edge of the first element and / or the second element is increased. The invention further provides a bonding method. According to the invention, the bonding yield and the production efficiency are improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a bonding device and a bonding method. Background Art

[0002] During the semiconductor bonding process, the bonding wave usually diffuses from the center to the edge of the object to be bonded, and the gas in the gap between the objects to be bonded is pushed to the edge, which makes it easy for water droplets or bubbles to form at the edge of the object to be bonded, resulting in a low bonding yield and low production efficiency. Summary of the invention

[0003] The present application provides a bonding device and a bonding method, which can effectively reduce the possibility of water droplets forming at the edges of the objects to be bonded during the bonding process, and improve the bonding yield and production efficiency.

[0004] To solve the above technical problems, the first aspect of the present application provides a bonding device for aligning and bonding a first element to a second element, the bonding device comprising: a picking device for picking up the first element to be bonded and moving the first element to align and bond with the second element; a supporting platform for supporting the second element; and an edge temperature control device for heating the edge of the first element and / or the second element during the process of bonding the first element to the second element, so as to increase the gas temperature at the edge of the first element and / or the second element.

[0005] In some embodiments, the edge temperature control device includes: a radiation transmitter, used to emit radiation waves according to radiation intensity; a radiation reflector, used to receive at least part of the radiation waves emitted by the radiation transmitter, obtain an energy signal of at least part of the received radiation waves, and reflect at least part of the received radiation waves to the edge of the first element and / or the second element; and a controller, connected to the radiation transmitter and the radiation reflector, used to set the radiation intensity according to the energy signal.

[0006] In some embodiments, the radiation reflector includes at least one reflecting portion, and at least one of the reflecting portions is arranged around the outer periphery of one of the carrier platform and the pickup device; and the radiation emitter includes at least one emitting portion, and at least one of the emitting portion is arranged around the outer periphery of the other of the carrier platform and the pickup device; the projection of the radiation emitter on the plane where the carrier platform is located at least partially overlaps with the projection of the radiation reflector on the plane where the carrier platform is located.

[0007] In some embodiments, the number of the emitting part and the number of the reflecting part are both one, and both the emitting part and the reflecting part are annular structures, the emitting part is extended around the outer periphery of the picking device, the reflecting part is extended around the outer periphery of the supporting platform, and the projection of the emitting part on the plane where the supporting platform is located falls within the range of the projection of the reflecting part on the plane where the supporting platform is located; or the number of the emitting part and the reflecting part are both multiple, the multiple emitting parts are spaced apart along the circumference of the picking device, the multiple reflecting parts are spaced apart along the circumference of the supporting platform, and the projection of each emitting part on the plane where the supporting platform is located at least partially overlaps with the projection of at least one reflecting part on the plane where the supporting platform is located.

[0008] In some embodiments, the radiation reflector and the radiation emitter are both located on one side of the supporting platform; the radiation emitter includes a plurality of emitting parts, and the radiation reflector includes a plurality of reflecting parts, and the plurality of emitting parts and the plurality of reflecting parts are alternately and spaced apart along the circumference of the supporting platform.

[0009] In some embodiments, the radiation reflector is disposed along at least a portion of an outer circumference of the supporting platform, and a length of the radiation reflector is not less than a diameter of the supporting platform.

[0010] In some embodiments, the edge temperature control device further includes: a filter, disposed between the radiation emitter and the radiation reflector, for filtering radiation waves emitted from the radiation emitter to the radiation reflector.

[0011] In some embodiments, the edge temperature control device further includes: a processor connected to the controller and the radiation reflector, and configured to adjust the radiation intensity set by the controller according to the energy signal.

[0012] In some embodiments, the edge temperature control device increases the edge temperature of the first element and / or the second element by 1-5°C.

[0013] To solve the above technical problems, the second aspect of the present application also provides a bonding method for aligning and bonding a first element to a second element, the bonding method comprising: picking up the first element to be bonded, and moving the first element to be aligned with the second element; and bonding the first element to the second element, and heating the edges of the first element and / or the second element during the process of bonding the first element to the second element, so that the gas temperature at the edges of the first element and / or the second element increases.

[0014] In some embodiments, heating the edge of the first element and / or the second element during the process of bonding the first element to the second element so as to increase the temperature of the gas at the edge of the first element and / or the second element includes: a radiation transmitter emitting a radiation wave according to a set radiation intensity; and acquiring an energy signal of the radiation wave received by a radiation reflector, and reflecting the received radiation wave to the edge of the first element and / or the second element so as to increase the temperature of the gas at the edge of the first element and / or the second element.

[0015] In some embodiments, the radiation intensity of the radiation wave is set according to the energy signal.

[0016] The bonding equipment provided in some embodiments of the present application includes a picking device, a supporting platform and an edge temperature control device. During the process of bonding the first element to the second element, the edge temperature control device is used to heat the edge of the first element and / or the second element, so that the gas temperature at the edge of the first element and / or the second element increases, thereby effectively reducing the possibility of water droplets forming at the edge of the object to be bonded, thereby improving the bonding yield and production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The drawings herein are incorporated into the specification and constitute a part of the specification. These drawings illustrate embodiments consistent with the present application and are used together with the specification to illustrate the technical solution of the present application.

[0018] Figure 1 is a schematic structural diagram of a bonding device according to an embodiment of the present application;

[0019] Figure 2 is a schematic diagram of an edge temperature control device according to an embodiment of the present application;

[0020] Figure 3 is a schematic projection diagram of a radiation reflector and a radiation emitter according to an embodiment of the present application;

[0021] Figure 4 is a projection diagram of a radiation reflector and a radiation emitter according to another embodiment of the present application;

[0022] Figure 5 is a schematic diagram of an edge temperature control device according to another embodiment of the present application;

[0023] Figure 6 It is a schematic diagram of the process of a bonding method according to an embodiment of the present application. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0025] The terms "first" and "second" in this application are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features.

[0026] In the description of the present application, “plurality” means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0027] For ease of description, some embodiments of the present application may use spatially relative terms such as "top", "bottom", "upper", "lower", etc. to describe the relationship between one element or component and another (or other) elements or components as shown in the various figures of the embodiments. It should be understood that in addition to the orientations described in the figures, the spatially relative terms are also intended to include different orientations of the device in use or operation. For example, if the device in the figures is turned over, the elements or components described as being "below" or "beneath" other elements or components will subsequently be positioned as being "above" or "on" the other elements or components.

[0028] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0029] The semiconductor bonding process is usually carried out at room temperature and pressure. During the semiconductor bonding process, the bonding wave usually diffuses from the center to the edge of the object to be bonded, and the gas in the gap between the objects to be bonded is pushed to the edge. At this time, under the action of atmospheric pressure, the gas pushed to the edge is prone to expansion, resulting in a drop in air pressure, and then a drop in gas temperature, which makes it easy for water droplets or bubbles to form at the edge of the object to be bonded, and these water droplets or bubbles may burst in the subsequent semiconductor process, resulting in defects in the manufactured semiconductor products, low product yield, and low production efficiency.

[0030] In order to solve the above technical problem, an embodiment of the present application provides a bonding device for controlling the temperature of gas at the edge of a component to be processed during a semiconductor bonding process. Figure 1 is a schematic diagram of the structure of a bonding device according to an embodiment of the present application. Figure 1 The bonding device 100 generally includes a pickup device 10 , a carrier 20 , and an edge temperature control device 30 . The bonding device 100 is used to align and bond a first component 401 and a second component 402 .

[0031] The pick-up device 10 is used to pick up the first component 401 to be bonded, and move the first component 401 to align and bond with the second component 402. During the bonding of the first component 401 to the second component 402, the edge temperature control device 30 is used to heat the edge of the first component 401 and / or the second component 402 (i.e., at least one of the first component 401 and the second component 402) to increase the gas temperature at the edge of at least one of the first component 401 and the second component 402. The second component 402 is carried on the carrier 20, and the first component 401 and the second component 402 can be chips or wafers to be bonded.

[0032] In one embodiment of the present application, a bonding device 100 is set up, and the bonding device 100 includes a picking device 10, a supporting platform 20 and an edge temperature control device 30. During the bonding of the first element 401 to the second element 402, the edge temperature control device 30 is used to heat the edge of the first element 401 and / or the second element 402, so that the gas temperature at the edge of the first element 401 and / or the second element 402 is increased, thereby effectively reducing the possibility of water droplets forming at the edge of the first element 401 and / or the second element 402, thereby improving the bonding yield and production efficiency.

[0033] Figure 2 Schematic diagram of an edge temperature control device according to an embodiment of the present application. Figure 2 The edge temperature control device 30 generally includes a radiation emitter 301 , a radiation reflector 302 and a controller 303 , and the controller 303 is connected to the radiation emitter 301 and the radiation reflector 302 .

[0034] In some embodiments, the radiation transmitter 301 is used to transmit radiation waves according to a set radiation intensity. The radiation reflector 302 is used to receive at least part of the radiation waves emitted by the radiation transmitter 301, obtain an energy signal of at least part of the received radiation waves, and reflect at least part of the received radiation waves to the edge of the first element 401 and / or the second element 402. The controller 303 is used to control the size of the radiation waves emitted by the radiation transmitter 301. In one embodiment, the controller 303 is used to set the radiation intensity according to the energy signal obtained by the radiation reflector 302.

[0035] In one embodiment, the radiation emitter 301 emits radiation waves according to the radiation intensity set by the controller 303, a portion of the radiation waves is incident on the edge of the first element 401 and / or the second element 402, and another portion of the radiation waves is incident on the radiation reflector 302 and then reflected by the radiation reflector 302 to the edge of the first element 401 and / or the second element 402. In another embodiment, the radiation waves emitted by the radiation emitter 301 can also be incident on the radiation reflector 302 in their entirety and then reflected by the radiation reflector 302 to the edge of the first element 401 and / or the second element 402. Therefore, the radiation reflector 302 can be used to irradiate the radiation waves to the edge of the first element 401 and / or the second element 402 at a stable energy and angle, thereby increasing the gas temperature at the edge of the first element 401 and / or the second element 402.

[0036] The radiation intensity set by the controller 303 is the intensity of the radiation wave emitted by the radiation transmitter 301, including a combination of one or more parameters such as temperature and radiation power. For example, the radiation intensity may include temperature, and the controller 303 may be a thermostat and may be configured to control the temperature of the radiation transmitter 301. In some embodiments, the radiation intensity may also include radiation power, and the controller 303 may also be a power controller for controlling the radiation power of the radiation transmitter 301. The present application does not specifically limit the parameters included in the radiation intensity and the implementation method of the controller 303.

[0037] In some embodiments, the radiation transmitter 301 may include a transmitter and a radiator coupled to each other, for example, the transmitter generates corresponding radiant heat energy based on the radiation intensity set by the controller 303, and the radiator generates corresponding radiation waves based on the radiant heat energy generated by the transmitter. For example, based on the radiation capability formula, the emissivity can be adjusted by selecting different radiation coatings of the radiator to achieve control of the radiation power, thereby achieving control of the radiation intensity emitted by the radiation transmitter 301, wherein the radiation capability formula E=εσT 4 , E represents the radiation emittance of the radiator, that is, the radiation power emitted per unit area; ε is the emissivity of the radiator; σ is the Stefan-Boltzmann constant; T represents the temperature of the radiator.

[0038] In one embodiment, the radiation emitter 301 includes at least one emitting portion 301a, and the radiation reflector 302 includes at least one reflecting portion 302a. The at least one reflecting portion 302a is disposed around the outer periphery of one of the carrier 20 and the pickup device 10, and the at least one emitting portion 301a is disposed around the outer periphery of the other of the carrier 20 and the pickup device 10. In other words, the radiation emitter 301 and the radiation reflector 302 are respectively located on the carrier 20 and the pickup device 10 on both sides of the second element 402, thereby increasing the effective emitting / reflecting area of ​​the radiation emitter 301 and the radiation reflector 302, so that more radiation waves can be reflected to the edge of the first element 401 and / or the second element 402.

[0039] In addition, the radiation reflector 302 is arranged around the outer periphery of the pickup device 10 or the carrier 20, so that the radiation waves received by the radiation reflector 302 are reflected as much as possible to the edge of the first component 401 picked up by the pickup device 10, or to the edge of the second component 402 carried on the carrier 20. The radiation reflector 302 can be arranged at a distance from the outer peripheral wall of the pickup device 10 or the carrier 20 to facilitate reflecting the radiation waves to the first component 401 or the second component 402, or it can be covered on the outer side wall of the pickup device 10 or the carrier 20, and its reflection angle is controlled so that the radiation waves can be incident on the edge of the first component 401 or the second component 402 through the reflection surface of the radiation reflector 302.

[0040] In one embodiment, the number of the emitting part 301a and the reflecting part 302a can be one, and both the emitting part 301a and the reflecting part 302a are annular structures, such as circular ring structures, rectangular frame structures, etc. Of course, in other embodiments, the number of the emitting part 301a and the reflecting part 302a can also be multiple, such as 2, 3, 4, or more than 4, and the emitting part 301a and the reflecting part 302a can be arc structures, linear structures, etc. The shapes and numbers of the emitting part 301a and the reflecting part 302a can be different. The present application does not specifically limit the number and shape of the emitting part 301a and the reflecting part 302a.

[0041] In one embodiment, see Figure 1, the radiation emitter 301 can be disposed above the radiation reflector 302, for example, around the outer periphery of the pickup device 10, while the radiation reflector 302 is disposed around the outer periphery of the carrier 20, and the radiation wave emitted by the radiation emitter 301 can be incident on the edge of the second component 402 through the radiation reflector 302, so as to increase the gas temperature at the edge of the second component 402, thereby greatly reducing the possibility of water droplets or bubbles generated at the edge of the second component 402 during bonding. In another embodiment, the radiation emitter 301 can be disposed below the radiation reflector 302, for example, the radiation emitter 301 is disposed around the outer periphery of the carrier 20, and the radiation reflector 302 is disposed around the outer periphery of the pickup device 10, and the radiation wave emitted by the radiation emitter 301 can be incident on the edge of the first component 401 through the radiation reflector 302, thereby increasing the gas temperature at the edge of the first component 401.

[0042] In one embodiment, the projection of the radiation emitter 301 on the plane where the carrier 20 is located at least partially overlaps with the projection of the radiation reflector 302 on the plane where the carrier 20 is located, so as to ensure that the radiation reflector 302 can receive at least part of the radiation wave emitted by the radiation emitter 301. It should be noted that "at least partially overlapped" includes partial overlap and full overlap.

[0043] In one embodiment, see Figure 3 When the number of the emitting part 301a and the reflecting part 302a is one, the emitting part 301a and the reflecting part 302a can adopt a ring structure. At this time, the emitting part 301a is arranged around the outer periphery of the pickup device 10, and the reflecting part 302a surrounds the outer periphery of the carrier 20. The projection of the emitting part 301a on the plane where the carrier 20 is located at least partially falls within the range of the projection of the reflecting part 302a on the plane where the carrier 20 is located; for example, the projection of the emitting part 301a on the plane where the carrier 20 is located completely falls within the range of the projection of the reflecting part 302a on the plane where the carrier 20 is located, thereby making the radiation wave emitted by the emitting part 301a incident on the reflecting part 302a as much as possible.

[0044] In one embodiment, when the number of the emitting parts 301a and the reflecting parts 302a are both multiple and the radiation emitter 301 and the radiation reflector 302 are respectively located on both sides of the second element 402, the multiple emitting parts 301a can be arranged at intervals along the circumference of the pickup device 10, and the multiple reflecting parts 302a can be arranged at intervals along the circumference of the supporting platform 20, and the projection of each emitting part 301a on the plane where the supporting platform 20 is located is at least partially overlapped with the projection of at least one reflecting part 302a on the plane where the supporting platform is located, for example, partially overlapped or completely overlapped, to ensure that at least one reflecting part 302a can receive at least part of the radiation wave emitted by each of the multiple emitting parts 301a.

[0045] In another embodiment, see Figure 4 When there are multiple emitting parts 301a and multiple reflecting parts 302a and both the radiating emitter 301 and the radiating reflector 302 are located on the same side of the second element 402, that is, the side where the carrier 20 is located, the multiple emitting parts 301a and the multiple reflecting parts 302a are alternately and spaced along the circumference of the carrier 20 to ensure that the radiating reflector 302 can receive and reflect at least part of the radiated waves emitted by the radiating emitter 301. Figure 4 In the illustrated embodiment, the number of the reflecting parts 302 a and the number of the emitting parts 301 a are both two, and the two emitting parts 301 a and the two reflecting parts 302 a are alternately and spaced apart along the circumferential direction of the supporting platform 20 .

[0046] In one embodiment, the radiation emitter 301 and the radiation reflector 302 may also be an integrated structure. In this case, the edge temperature control device 30 integrated with the radiation emitter 301 and the radiation reflector 302 may generate radiation waves under the control of the controller 303, and directly and uniformly irradiate the radiation waves to the edges of the first element 401 and / or the second element 402.

[0047] In one embodiment, the radiation reflector 302 is extended along at least a portion of the outer periphery of the carrier platform 20, and the length of the radiation reflector 302 is not less than the diameter of the carrier platform 20, so that when the radiation reflector 302 reflects the received radiation wave, the reflection area can cover the edge of the second element 402.

[0048] In one embodiment, the diameter of the second element 402 is about 300 mm, and the diameter of the support platform 20 is equal to or slightly larger than the diameter of the second element 402, also about 300 mm, and the length of the radiation reflector 302 is not less than 300 mm.

[0049] In one embodiment, if the radiation reflector 302 is a circular ring structure, the length of the radiation reflector 302 may be the circumference of the support platform 20; if the radiation reflector 302 is a rectangular frame structure, the length of the radiation reflector 302 may be the circumference of a rectangle with the outer circumference of the support platform 20 as an inscribed circle; if the radiation reflector 302 includes n reflecting portions 302a, and the reflecting portions 302a are arc-shaped structures, the arc length of each reflecting portion 302a may be 1 / n of the circumference of the support platform 20.

[0050] In one embodiment, the radiation reflector 302 includes an analog-to-digital converter for performing analog-to-digital conversion on the received radiation wave, thereby obtaining a digital signal that can be used to represent the energy corresponding to the radiation wave.

[0051] Continue to see Figure 2In one embodiment, the edge temperature control device 30 further includes a filter 304. The filter 304 may be disposed between the radiation emitter 301 and the radiation reflector 302.

[0052] The filter 304 can be used to filter the radiation waves emitted from the radiation emitter 301 to the radiation reflector 302. For example, the filter 304 allows the radiation waves of a preset wavelength (e.g., wavelength 192-760Nm) emitted by the radiation emitter 301 to pass through to irradiate the radiation reflector 302, so that the radiation reflector 302 can reflect the received radiation waves in a stable form to the edge of the first element 401 and / or the second element 402, thereby increasing the gas temperature at the edge of the first element 401 and / or the second element 402. The filter can be a low-pass filter, a band-pass filter, etc., which can be determined according to the preset wavelength actually required, and is not specifically limited.

[0053] Continue to see Figure 2 In one embodiment, the edge temperature control device 30 further includes a processor 305 , which is connected to the controller 303 and the radiation reflector 302 , and is used to adjust the radiation intensity set by the controller 303 according to the energy signal obtained by the radiation reflector 302 .

[0054] The processor 305 communicates with the controller 303 and the radiation reflector 302. After receiving the energy signal sent by the radiation reflector 302, the processor 305 can determine the radiation intensity currently set by the controller 303 according to the energy signal to determine whether to change the radiation intensity currently set by the controller 303. For example, according to the energy signal, it is determined that the current temperature of the controller 303 is 25°C, which is too low compared with the target temperature of 30°C, that is, the temperature of the controller 303 can be adjusted by the processor 305 so that the set temperature of the controller 303 becomes 30°C.

[0055] In some embodiments, after receiving the energy signal sent by the radiation reflector 302, the processor 305 can determine whether the radiant heat energy / temperature corresponding to the energy signal, the radiation intensity set by the controller 303 and other data are consistent with the set parameters. If they are inconsistent, the processor 305 can control the controller 303 to reset / change the radiation intensity; if they are consistent, the radiation intensity of the controller 303 does not need to be changed. For example, if the processor 305 determines that the temperature corresponding to the energy signal is lower than the minimum value in the set temperature range, the radiation intensity set by the controller 303 can be increased; or if the processor 305 determines that the temperature corresponding to the energy signal is the maximum value in the set temperature range, the radiation intensity set by the controller 303 can be set to zero. In one embodiment, the set temperature range can be 25°C-30°C.

[0056] Between the processor 305 and the controller 303, the processor 305 may send a control signal to the controller 303, so that the controller 303 resets or changes the set radiation intensity based on the control signal. The control signal may be an electrical signal representing the radiation wave energy, and the controller 303 determines the radiation wave energy based on the control signal, and then determines the radiation intensity according to the above-mentioned radiation capacity formula.

[0057] In some embodiments of the present application, by setting up a processor 305, the edge temperature control device 30 can change the radiation intensity of the controller 303 at any time under the control of the processor 305, thereby controlling the temperature of the edge of the first element 401 and / or the second element 402.

[0058] In one embodiment, the processor 305 may be a CPU (Central Processing Unit), an integrated circuit chip, a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components. In one embodiment, the processor 305 may be a laptop computer, a desktop computer or other intelligent device that can communicate with the controller 303.

[0059] In one embodiment, during the bonding of the first element 401 to the second element 402, the edge temperature of the first element 401 and / or the second element 402 can be increased by 1 to 5°C, for example, 1°C, 2°C, 3°C, 4°C, 5°C, etc., through the edge temperature control device 30, which can effectively reduce the possibility of gas forming water droplets at the edge of the first element 401 and / or the second element 402, thereby improving the bonding yield and production efficiency.

[0060] Figure 5 is a schematic diagram of an edge temperature control device of another embodiment of the present application. In an application scenario, see Figure 5 The edge temperature control device 30 generally includes a radiation transmitter 301, a radiation reflector 302, a controller 303, a filter 304, and a processor 305. The radiation transmitter 301 may be a thermal radiation transmitter, the radiation reflector 302 may be a beam receiving reflector, the controller 303 may be a thermal controller, and the processor 305 may correspond to an intelligent system (e.g., a host).

[0061] In one embodiment, during the bonding of the first element 401 to the second element 402, the radiation emitter 301 may emit radiation waves according to the radiation intensity set by the controller 303. The radiation reflector 302 receives at least part of the radiation waves emitted by the radiation emitter 301, obtains an energy signal of at least part of the received radiation waves, and reflects at least part of the received radiation waves to the edge of the first element 401 and / or the second element 402. The controller 303 sets the radiation intensity according to the energy signal obtained by the radiation reflector 302. The filter 304 allows radiation waves of a preset wavelength in the radiation waves emitted by the radiation emitter 301 to pass through to irradiate the radiation reflector 302, so that the radiation reflector 302 can reflect the received radiation waves to the edge of the first element 401 and / or the second element 402 in a stable form. The processor 305 receives the energy signal sent by the radiation reflector 302 to control and adjust the radiation intensity currently set by the controller 303.

[0062] In order to solve the above technical problems, an embodiment of the present application also provides a bonding method. Figure 6 1 is a schematic flow chart of a bonding method according to an embodiment of the present application. The method can be applied to the bonding device 100 described in any of the above embodiments to align and bond the first component 401 and the second component 402. It should be noted that if the results are substantially the same, the method of the present application is not limited to the bonding method of the first component 401 and the second component 402. Figure 6 The process sequence shown is limited. Figure 6 As shown, the semiconductor separation method of the present application may include the following steps.

[0063] S101: Pick up a first component to be bonded, and move the first component to align with the second component.

[0064] The first component 401 is picked up by the picking device 10 , and the first component 401 is moved to be aligned and bonded with the second component 402 .

[0065] S102: Bonding the first element to the second element, and heating the edge of the first element and / or the second element during the bonding process of the first element to the second element, so as to increase the temperature of the gas at the edge of the first element and / or the second element.

[0066] During the bonding of the first element 401 to the second element 402 , the edge temperature control device 30 is used to heat the edge of at least one of the first element 401 and the second element 402 to increase the gas temperature at the edge of at least one of the first element 401 and the second element 402 .

[0067] In one embodiment of the present application, during the bonding of the first element 401 to the second element 402, the edge temperature control device 30 is used to heat the edge of the first element 401 and / or the second element 402, so that the gas temperature at the edge of the first element 401 and the second element 402 increases, thereby effectively reducing the possibility of water droplets forming at the edge of the first element 401 and / or the second element 402, thereby improving the bonding yield and production efficiency.

[0068] In one embodiment, during the process of bonding the first element 401 to the second element 402, heating the edge of the first element 401 and / or the second element 402 to increase the temperature of the gas at the edge of the first element 401 and / or the second element 402 includes: the radiation emitter 301 emits a radiation wave according to a set radiation intensity, and obtains an energy signal of the radiation wave received by the radiation reflector 302, and reflects the received radiation wave to the edge of the first element 401 and / or the second element 402 to increase the temperature of the gas at the edge of the first element 401 and / or the second element 402.

[0069] For example, the radiation emitter 301 emits radiation waves according to the radiation intensity set by the controller 303, a portion of the radiation waves is incident on the edge of the first element 401 and / or the second element 402, and another portion of the radiation waves is incident on the radiation reflector 302 and then reflected by the radiation reflector 302 to the edge of the first element 401 and / or the second element 402. In another embodiment, the radiation waves emitted by the radiation emitter 301 can also be incident on the radiation reflector 302 in their entirety, and then reflected by the radiation reflector 302 to the edge of the first element 401 and / or the second element 402. Therefore, the radiation reflector 302 can be used to irradiate the radiation waves to the edge of the first element 401 and / or the second element 402 at a stable energy and angle, thereby increasing the gas temperature at the edge of the first element 401 and / or the second element 402.

[0070] Furthermore, in one embodiment, the radiation intensity of the radiation wave is set according to the energy signal.

[0071] The controller 303 sets the radiation intensity according to the energy signal acquired by the radiation reflector 302, wherein the radiation intensity set by the controller 303 is the intensity of the radiation wave emitted by the radiation emitter 301, including a combination of one or more parameters such as temperature and radiation power. For example, the radiation intensity may include temperature, and the controller 303 may be a thermostat and may be configured to control the temperature of the radiation emitter 301. In one embodiment, the radiation intensity may also include radiation power, and the controller 303 may also be a power controller for controlling the radiation power of the radiation emitter 301. The present application does not specifically limit the parameters included in the radiation intensity and the implementation method of the controller 303.

[0072] Those skilled in the art will appreciate that, in the above method of specific implementation, the order in which the steps are written does not imply a strict execution order and does not constitute any limitation on the implementation process. The specific execution order of the steps should be determined by their functions and possible internal logic.

[0073] The above description is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

[0074] The above description is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A bonding device for aligning and bonding a first component with a second component, characterized in that: The bonding device comprises: A picking device, used for picking up a first component to be bonded, and moving the first component to align with the second component for bonding; a carrying platform, used for carrying the second element; and The edge temperature control device is used to heat the edge of the first element and / or the second element during the process of bonding the first element to the second element, so as to increase the gas temperature at the edge of the first element and / or the second element.

2. The bonding device according to claim 1, characterized in that The edge temperature control device comprises: A radiation emitter, for emitting radiation waves according to radiation intensity; a radiation reflector, configured to receive at least a portion of the radiation wave emitted by the radiation emitter, acquire an energy signal of at least a portion of the received radiation wave, and reflect at least a portion of the received radiation wave to an edge of the first element and / or the second element; and A controller is connected to the radiation emitter and the radiation reflector, and is used to set the radiation intensity according to the energy signal.

3. The bonding device according to claim 2, characterized in that The radiation reflector includes at least one reflecting portion, and the at least one reflecting portion is disposed around the outer periphery of one of the supporting platform and the picking device; as well as The radiation emitter includes at least one emitting portion, and the at least one emitting portion is arranged around the outer periphery of the other of the carrier platform and the pickup device; the projection of the radiation emitter on the plane where the carrier platform is located at least partially overlaps with the projection of the radiation reflector on the plane where the carrier platform is located.

4. The bonding device according to claim 3, characterized in that The number of the emitting part and the reflecting part are both one, and both of the emitting part and the reflecting part are annular structures, the emitting part is extended around the outer periphery of the picking device, the reflecting part is extended around the outer periphery of the supporting platform, and the projection of the emitting part on the plane where the supporting platform is located falls within the range of the projection of the reflecting part on the plane where the supporting platform is located; or The number of the emitting parts and the reflecting parts are both multiple, the multiple emitting parts are arranged at intervals along the circumference of the picking device, and the multiple reflecting parts are arranged at intervals along the circumference of the supporting platform, and the projection of each of the emitting parts on the plane where the supporting platform is located at least partially overlaps with the projection of at least one reflecting part on the plane where the supporting platform is located.

5. The bonding device according to claim 2, characterized in that: The radiation reflector and the radiation emitter are both located on one side where the supporting platform is located; The radiation transmitter includes a plurality of transmitting parts, and the radiation reflector includes a plurality of reflecting parts. The plurality of transmitting parts and the plurality of reflecting parts are alternately and spaced apart along the circumference of the supporting platform.

6. The bonding device according to claim 2, characterized in that: The radiation reflector is disposed along at least a portion of an outer circumference of the supporting platform, and a length of the radiation reflector is not less than a diameter of the supporting platform.

7. The bonding device according to claim 2, characterized in that: The edge temperature control device also includes: The filter is arranged between the radiation transmitter and the radiation reflector, and is used for filtering the radiation waves emitted from the radiation transmitter to the radiation reflector.

8. The bonding device according to claim 2, characterized in that: The edge temperature control device also includes: A processor is connected to the controller and the radiation reflector, and is used to adjust the radiation intensity set by the controller according to the energy signal.

9. The bonding device according to claim 1, characterized in that: The edge temperature control device increases the edge temperature of the first element and / or the second element by 1 to 5°C.

10. A bonding method for aligning and bonding a first component and a second component, characterized in that: The bonding method comprises: picking up the first component to be bonded and moving the first component to align with the second component; and The first element is bonded to the second element, and during the bonding process of the first element to the second element, the edge of the first element and / or the second element is heated to increase the temperature of the gas at the edge of the first element and / or the second element.

11. The bonding method according to claim 10, characterized in that: The step of heating the edge of the first element and / or the second element during the process of bonding the first element to the second element so as to increase the temperature of the gas at the edge of the first element and / or the second element comprises: The radiation emitter emits radiation waves according to a set radiation intensity; and An energy signal of the radiation wave received by the radiation reflector is acquired, and the received radiation wave is reflected to the edge of the first element and / or the second element, so that the temperature of the gas at the edge of the first element and / or the second element is increased.

12. The bonding method according to claim 11, characterized in that: Also includes: The radiation intensity of the radiation wave is set according to the energy signal.

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