Magnetron sputtering coating method, coating product and coating device

Abstract

The invention provides a magnetron sputtering coating method, a coating product and a coating device, and relates to the technical field of magnetron sputtering coating, the magnetron sputtering coating method comprises the following steps: placing a target material and a substrate in a vacuum cavity; configuring a first preset magnetic field, wherein the central magnetic field intensity of the first preset magnetic field is greater than or less than the peripheral magnetic field intensity; carrying out sputtering coating on the substrate for the first time; configuring a second preset magnetic field, wherein the central magnetic field intensity of the second preset magnetic field is equal to the peripheral magnetic field intensity; and carrying out sputtering coating on the substrate for the second time. According to the magnetron sputtering coating method provided by the embodiment of the invention, the first preset magnetic field is adopted for sputtering in the first sputtering process, the central magnetic field intensity is larger than or smaller than the peripheral magnetic field intensity, damage to the base body can be reduced, the formed protective layer makes better contact with the front layer on the base body, and the service life of the protective layer is prolonged. And on the basis, the compactness of a subsequent deposited film is also improved, and the film quality is improved.

Description

Technical Field

[0001] The present application relates to the technical field of magnetron sputtering coating, and in particular to a magnetron sputtering coating method, a coating product and a coating device. Background Art

[0002] During the magnetron sputtering coating process, the ionization efficiency of electrons in the magnetic field increases, and the target current density and sputtering efficiency also increase accordingly. However, during the process of using high-energy plasma for coating deposition, high-energy particles bombard the coating substrate, which will damage the coating substrate material, resulting in reduced film quality and decreased conductivity. Summary of the invention

[0003] The embodiments of the present application provide a high-efficiency and low-damage magnetron sputtering coating method, a coating product and a coating device, which can reduce the damage caused to the coating substrate material.

[0004] In some embodiments, a magnetron sputtering coating method is provided, the method comprising the following steps:

[0005] placing the target material and the substrate into a vacuum chamber;

[0006] Configure a first preset magnetic field, wherein the central magnetic field strength of the first preset magnetic field is greater than or less than the peripheral magnetic field strength;

[0007] performing a first sputtering on the substrate;

[0008] Configuring a second preset magnetic field, wherein the central magnetic field strength of the second preset magnetic field is equal to the peripheral magnetic field strength;

[0009] The substrate is sputtered a second time.

[0010] In some embodiments, the first preset magnetic field and the second preset magnetic field are both circular magnetic fields, the central magnetic field of the circular magnetic field is distributed in a circular shape, and the peripheral magnetic field of the circular magnetic field is distributed in a closed circular ring shape;

[0011] Or the first preset magnetic field and the second preset magnetic field are both polygonal magnetic fields, the central magnetic field of the polygonal magnetic field is distributed in a polygonal shape, and the peripheral magnetic field of the polygonal magnetic field is distributed in a closed polygonal ring shape.

[0012] In some embodiments, the first magnet and the second magnet are permanent magnets with opposite magnetic properties, and the steps of configuring the first preset magnetic field and configuring the second preset magnetic field both include: adjusting the permanent magnetic parameters of the first magnet and / or the second magnet, and the permanent magnetic parameters include at least one of the magnet size, the magnet material, and the distance between the magnet and the target material.

[0013] In some embodiments, the first magnet and the second magnet are electromagnets with opposite magnetic properties, and the steps of configuring the first preset magnetic field and configuring the second preset magnetic field both include: adjusting the electromagnetic parameters of the first magnet and / or the second magnet, and the electromagnetic parameters include at least one of the number of coil turns, current intensity, current direction, and the distance between the magnet and the target material.

[0014] In some embodiments, the first sputtering step of the substrate includes: evacuating the vacuum chamber and introducing a sputtering gas into the vacuum chamber; configuring a first sputtering power; starting an ion source to sputter the substrate until the film deposition thickness reaches a first thickness and then stopping;

[0015] The second sputtering step for the substrate includes: configuring a second sputtering power, the second sputtering power is greater than the first sputtering power; starting the ion source to sputter the substrate until the film deposition thickness reaches a second thickness and then stopping.

[0016] In some embodiments, the first thickness ranges from 3 nm to 1000 nm.

[0017] In some embodiments, the step of performing a second sputtering on the substrate further includes: before starting the ion source, moving the substrate so that the distance between the substrate and the target is greater than the distance between the substrate and the target during the first sputtering process.

[0018] In some embodiments, the step of performing the first sputtering on the substrate further includes: closing a baffle in front of the target before starting the ion source, and opening the baffle after starting the ion source for pre-sputtering for a first period of time.

[0019] In some embodiments, a coated product is provided, wherein the coated product is obtained by coating using the above-mentioned magnetron sputtering coating method.

[0020] In some embodiments, a coating device is provided, comprising a sputtering chamber, a magnetron assembly, and an adjustment assembly, wherein:

[0021] The sputtering chamber comprises a vacuum chamber, in which a sample rack and a mounting rack are arranged, wherein the sample rack is used to mount a substrate, and the mounting rack is used to mount a target material;

[0022] The magnetron assembly is disposed in the vacuum chamber, and comprises a first magnet and a second magnet, wherein the second magnet is disposed on the periphery of the first magnet, and the first magnet and the second magnet have opposite magnetic properties;

[0023] The adjustment component is connected to the magnetron component and is used to adjust the magnetic field strength between the first magnet, the second magnet and the target material.

[0024] In some embodiments, the adjustment assembly includes a first adjustment member and a second adjustment member, wherein:

[0025] The first adjusting member is connected to the first magnet and is used to drive the first magnet to approach or move away from the target material;

[0026] The second adjusting member is connected to the second magnet and is used to drive the second magnet to approach or move away from the target material.

[0027] In some embodiments, the first magnet and the second magnet are electromagnets, wherein:

[0028] The first magnet includes a first conductor and a first power source, wherein the first conductor is electrically connected to the first power source so as to generate a current in the first conductor;

[0029] The second magnet includes a second conductor and a second power source. The second conductor is electrically connected to the second power source to generate a current in the second conductor. The magnetic field generated by the current in the first conductor is opposite in direction to the magnetic field generated by the current in the second conductor.

[0030] In some embodiments, the adjustment component includes a controller electrically connected to the first power supply and the second power supply to adjust the magnetic field strength and magnetic field direction generated by the current in the first conductor and the second conductor.

[0031] In some embodiments, the sample holder is connected to a moving component, and the moving component is used to adjust the distance between the sample holder and the mounting frame.

[0032] The magnetron sputtering coating method provided in the embodiment of the present application uses an unbalanced magnetic field with a central magnetic field strength greater than or less than a peripheral magnetic field strength to sputter a substrate to form a protective layer during the first sputtering process. The plasma density on the substrate surface is low, the film forming speed is slow, and the damage to the substrate is small. During the second sputtering process, a balanced magnetic field with the same central and peripheral magnetic field strengths is used to further sputter to increase the film thickness. Based on the use of the first preset magnetic field for sputtering during the first sputtering process, damage to the substrate can be reduced, so that the formed protective layer has better contact with the previous layer on the substrate, and the density of the subsequent thin film deposited on this basis is also improved, thereby improving the quality of the film and thus improving the conductive properties of the film. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0034] Figure 1 is a schematic structural diagram of a coating device in some embodiments of the present application;

[0035] Figure 2 is a schematic structural diagram of a coating device in another embodiment of the present application;

[0036] Figure 3 is a schematic diagram of the distribution of the first magnet and the second magnet in some embodiments of the present application;

[0037] Figure 4 is a schematic diagram of the distribution of the first magnet and the second magnet in another embodiment of the present application;

[0038] Figure 5 is a schematic structural diagram of a total coating device according to another embodiment of the present application;

[0039] Figure 6 is a schematic flow chart of a magnetron sputtering coating method in some embodiments of the present application;

[0040] Figure 7a yes Figure 6 A schematic diagram of the distribution of the first preset magnetic field in the embodiment;

[0041] Figure 7b yes Figure 6 Another distribution diagram of the first preset magnetic field in the embodiment;

[0042] Figure 7c yes Figure 6 A schematic diagram of the distribution of the second preset magnetic field in the embodiment;

[0043] Figure 8 yes Figure 6 A flowchart of a specific embodiment of step S300;

[0044] Fig. 9 yes Figure 6 FIG. 5 is a flow chart of a specific embodiment of step S500 in FIG.

[0045] In the above drawings:

[0046] 10. Sputtering chamber; 11. Vacuum chamber; 12. Sample rack; 13. Mounting rack;

[0047] 20. Magnetron assembly; 21. First magnet; 211. First conductor; 22. Second magnet; 221. Second conductor; 23. Connector;

[0048] 30. Adjustment assembly; 31. First adjustment member; 32. Second adjustment member; 33. First guide structure; 331. First guide groove; 332. First slider; 34. Second guide structure; 341. Second guide groove; 342. Second slider;

[0049] 40. moving component; 50. substrate; 60. target material;

[0050] 70. Rotating motor; 90. Sealing flange. DETAILED DESCRIPTION

[0051] The present application is further described in detail below in conjunction with the accompanying drawings and examples. It is particularly noted that the following examples are only used to illustrate the present application, but are not intended to limit the scope of the present application. Similarly, the following examples are only some embodiments of the present application rather than all embodiments, and all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present application.

[0052] The terms "first", "second", and "third" in the embodiments of the present application are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first", "second", and "third" can expressly or implicitly include at least one of the features. In the description of the present application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. In the embodiments of the present application, all directional indications (such as up, down, left, right, front, back...) are only used to explain the relative position relationship, movement, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication also changes accordingly. The terms "including" and "having" in the embodiments of the present application and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but optionally also includes steps or units that are not listed, or optionally also includes other steps or components inherent to these processes, methods, products, or devices.

[0053] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0054] See also Figure 1 , Figure 11 is a schematic diagram of the structure of the coating device in some embodiments of the present application. An embodiment of the present application provides a coating device, which includes a sputtering chamber 10, a magnetron assembly 20 and an adjustment assembly 30. Among them, the sputtering chamber 10 includes a vacuum chamber 11, and the sputtering chamber 10 is connected to a negative pressure assembly (not shown in the figure) for evacuating the vacuum chamber 11. A sample rack 12 and a mounting rack 13 are arranged in the vacuum chamber 11, and the sample rack 12 and the mounting rack 13 are arranged opposite to each other, and the substrate 50 and the target material 60 are respectively installed on the opposite sides of the sample rack 12 and the mounting rack 13. The sputtering chamber 10 is also connected to an airway pipe and an ion source (not shown in the figure), and a sputtering gas is transported into the vacuum chamber 11 through the airway pipe. The sputtering gas can be one of argon, oxygen, nitrogen, helium, krypton, etc. or a mixed gas. The target material 60 can be a metal and alloy target material, an inorganic non-metallic target material, a composite target material, etc., wherein the inorganic non-metallic target material can be different types such as oxides, silicides, nitrides and fluorides. The ion source can be a DC power supply or an RF power supply. The DC power supply is used for sputtering of conductive targets such as metal targets 60, and the RF power supply is used for sputtering of non-conductive targets such as oxide targets. A voltage is applied to the sputtering gas through the ion source to plasmatize the sputtering gas. The plasmatized particles bombard the target material to apply sputtering power to the target material, so that the neutral atoms or particles on the surface of the target material 60 obtain sufficient kinetic energy to break away from the surface of the target material 60 and deposit on the surface of the substrate 50 to form a thin film. In this application, only the preparation of ITO film is used as an example for explanation. The target material 60 is a round target material 60 of ITO (In2O3: SnO2=9:1), the ion source is an RF (radio frequency) power supply, and the sputtering gas is argon. Argon is ionized into Ar+ ions and electrons under high pressure, and the Ar+ ions bombard the target material 60 under the action of the electric field.

[0055] The magnetron assembly 20 is disposed in the vacuum chamber 11, and includes a first magnet 21 and a second magnet 22. The second magnet 22 is disposed on the periphery of the first magnet 21, and the first magnet 21 and the second magnet 22 have opposite magnetism. Optionally, the magnetism of the first magnet 21 is an N pole, the second magnet 22 surrounds the periphery of the first magnet 21, and the magnetism of the second magnet 22 is an S pole; optionally, the magnetism of the first magnet 21 is an S pole, and the magnetism of the second magnet 22 is an N pole.

[0056] The adjustment component 30 is connected to the magnetron component 20 and is used to adjust the magnetic field strength between the first magnet 21 and the second magnet 22 and the target material 60 .

[0057] The present application adjusts the first magnet 21 and the second magnet 22 by setting an adjustment component 30, thereby changing the magnetic field strength at the center and periphery of the target material 60 during the magnetron sputtering coating process, realizing the transition between the balanced magnetic field and the unbalanced magnetic field, and can adapt to the requirements of the substrate 50 for different film thicknesses or film qualities, and has strong versatility.

[0058] Please continue reading Figure 1 In some embodiments, the first magnet 21 and the second magnet 22 are permanent magnets with opposite magnetic properties, and the adjustment assembly 30 includes a first adjustment member 31 and a second adjustment member 32. The first adjustment member 31 is connected to the first magnet 21 to drive the first magnet 21 to approach or move away from the target 60; the second adjustment member 32 is connected to the second magnet 22 to drive the second magnet 22 to approach or move away from the target 60. When the first magnet 21 moves close to the target 60, the magnetic field strength applied by the first magnet 21 on the surface of the target 60 increases, and when the first magnet 21 moves away from the target 60, the magnetic field strength applied by the first magnet 21 on the surface of the target 60 decreases. Similarly, when the second magnet 22 moves close to the target 60, the magnetic field strength applied by the second magnet 22 on the surface of the target 60 increases, and when the second magnet 22 moves away from the target 60, the magnetic field strength applied by the second magnet 22 on the surface of the target 60 decreases.

[0059] The structure of the first adjusting member 31 and the second adjusting member 32 is not specifically limited, as long as it is convenient to drive the first magnet 21 and the second magnet 22 to move. Optionally, the first adjusting member 31 is fixedly connected to the first magnet 21, and the second adjusting member 32 is fixedly connected to the second magnet 22. A plurality of pin holes are respectively provided on the first adjusting member 31 and the second adjusting member 32 along the moving direction of the magnetic control assembly 20. The first adjusting member 31 and the second adjusting member 32 are respectively slidably connected to the sputtering chamber 10 and locked by pins. Optionally, the first adjusting member 31 and the second adjusting member 32 are both automated linear drive mechanisms, such as a lead screw, an electric push rod, etc. The moving end of the first adjusting member 31 is fixedly connected to the first magnet 21, and the moving end of the second adjusting member 32 is fixedly connected to the second magnet 22. The following is a specific description of the first adjusting member and the second adjusting member driving the first magnet and the second magnet to move through threaded transmission adjustment.

[0060] Exemplarily, one end of the first adjusting member 31 is threadedly connected to the first magnet 21, and the other end extends to the outside of the vacuum chamber 11 and is rotatably connected to the sputtering chamber 10; one end of the second adjusting member 32 is threadedly connected to the second magnet 22, and the other end extends to the outside of the vacuum chamber 11 and is rotatably connected to the sputtering chamber 10. A sealing flange 90 is provided between the first adjusting member 31 and the sputtering chamber 10, and a sealing flange 90 is provided between the second adjusting member 32 and the sputtering chamber 10 to ensure the sealing inside the vacuum chamber 11.

[0061] See also Figure 2 , Figure 2: is a schematic diagram of the structure of the coating device in another embodiment of the present application. A first guide structure 33 is arranged between the first magnet 21 and the sputtering chamber 10. The first guide structure 33 may include a first guide groove 331 and a first slider 332. The first guide groove 331 may be a rectangular groove, a dovetail groove or other special-shaped structures. The first slider 332 is clearance-matched with the first guide groove 331 and slides along the first guide groove 331. The first guide groove 331 is opened in one between the first magnet 21 and the sputtering chamber 10, and the first slider 332 is fixedly connected to the other between the first magnet 21 and the sputtering chamber 10. By rotating the first adjusting member 31, the first magnet 21 can move closer to or away from the target 60 along the first guide groove 331. The first guide structure 33 can not only guide the first magnet 21 to move closer to or away from the target 60, but also prevent the first magnet 21 from rotating, thereby ensuring the stability of the transmission between the first adjusting member 31 and the first magnet 21.

[0062] Similarly, a second guide structure 34 is provided between the second magnet 22 and the sputtering chamber 10. The second guide structure 34 may include a second guide groove 341 and a second slider 342. The second guide groove 341 may be a rectangular groove, a dovetail groove or other special-shaped structures. The second slider 342 is clearance-matched with the second guide groove 341 and slides along the second guide groove 341. The second guide groove 341 is provided between the second magnet 22 and the sputtering chamber 10, and the second slider 342 is fixedly connected to the other between the second magnet 22 and the sputtering chamber 10. By rotating the second adjusting member 32, the second magnet 22 can move closer to or away from the target 60 along the second guide groove 341. The second guide structure 34 can not only guide the second magnet 22 to move closer to or away from the target 60, but also prevent the second magnet 22 from rotating, thereby ensuring the stability of the transmission between the second adjusting member 32 and the second magnet 22.

[0063] The shapes of the first magnet 21 and the second magnet 22 include, but are not limited to, rectangular, circular, polygonal, etc., and are not specifically limited here, as long as the second magnet 22 forms a closed magnetic field around the first magnet 21.

[0064] See also Figure 3 , Figure 3 Schematic diagram of the distribution of the first magnet and the second magnet in some embodiments of the present application. Optionally, the first magnet 21 may be a circular magnet, the second magnet 22 may be a ring-shaped magnet, and the first magnet 21 is located at the center of the ring-shaped second magnet 22.

[0065] See also Figure 4 , Figure 4: is a schematic diagram of the distribution of the first magnet and the second magnet in another embodiment of the present application. Optionally, the first magnet 21 can be a rectangular magnet, and the second magnet 22 can be an annular rectangular magnet, and the first magnet 21 is offset and arranged at the center of the annular rectangular second magnet 22. The first magnet 21 and the second magnet 22 are not limited to circular or rectangular, and can also be other polygonal shapes, as long as the second magnet 22 surrounds the first magnet to form a closed magnet structure.

[0066] Please continue reading Figure 2 , the second magnet 22 may be provided with a plurality of second magnets 22, and the plurality of second magnets 22 may be combined to form a closed annular structure, and the number of second adjusting members 32 may be the same as the number of second magnets 22 and correspond one to one. It should be noted that when adjusting the distance between any second magnet 22 or the first magnet 21 and the target 60, only the magnetic field strength formed by the magnet pair on the surface of the target 60 is changed. In this embodiment, the plurality of second magnets 22 need to move synchronously in parallel, and the plurality of second adjusting members 32 may be operated simultaneously to make the plurality of second magnets 22 synchronously move away from the target 60 or synchronously approach the target 60, thereby changing the peripheral magnetic field strength applied by the plurality of second magnets 22 on the target 60.

[0067] See also Figure 1 , multiple second magnets 22 can also be connected to form a whole, and multiple second magnets 22 can be driven to move synchronously by just threading a second adjusting member 32 with any second magnet 22. For example, Figure 1 The second magnet 22 is provided with a plurality of second magnets 22, and the plurality of second magnets 22 are arranged around the periphery of the first magnet 21 to form a closed annular structure, and the plurality of second magnets 22 are connected to form a whole by a connecting member 23. A second adjusting member 32 is provided, which is threadedly connected with the connecting member 23. The connecting member 23 can be a planar plate-like structure with high hardness, and the connecting member 23 is not easy to deform. The fixed connection between the plurality of second magnets 22 can drive the plurality of second magnets 22 to synchronously approach the target 60 or synchronously move away from the target 60, ensuring that the plurality of second magnets 22 are on the same surface when adjusting the distance between the plurality of second magnets 22 and the target 60, so that the peripheral magnetic field of the magnetron assembly 20 is evenly distributed and changes synchronously.

[0068] See also Figure 5 , Figure 5It is a schematic diagram of the structure of the total coating device of another embodiment of the present application. In some embodiments, the first magnet 21 and the second magnet 22 are electromagnets. Exemplarily, the first magnet 21 includes a first conductor 211 and a first power supply, and the first conductor 211 is electrically connected to the first power supply so that a current is generated in the first conductor 211; the second magnet 22 includes a second conductor 221 and a second power supply, and the second conductor 221 is electrically connected to the second power supply so that a current is generated in the second conductor 221, and the magnetic field generated by the current in the first conductor 211 is opposite in direction to the magnetic field generated by the current in the second conductor 221. The adjustment component 30 can adjust the electromagnetic parameters of the first magnet 21 and / or the second magnet 22, and the electromagnetic parameters include at least one of the number of coil turns, current intensity, current direction, and the distance between the magnet and the target material. The distance between the magnet and the target can be adjusted by the first adjustment member 31 and the second adjustment member 32 mentioned above. In this embodiment, the adjustment component 30 may also include a controller (not shown in the figure), which is electrically connected to the first power supply and the second power supply to adjust the magnetic field strength and magnetic field direction generated by the current in the first conductor 211 and the second conductor 221. The controller can control the voltage magnitude and voltage difference at both ends of the first conductor 211 and the second conductor 221, respectively, so as to control the magnitude and direction of the current in the first conductor 211 and the magnitude and direction of the current in the second conductor 221, and then adjust the magnetic field strength and magnetic field direction generated by the current in the first conductor 211 and the second conductor 221. It can be understood that the first power supply and the second power supply can be the same power supply, the first conductor 211 and the second conductor 221 are connected in parallel, and the voltage at both ends of the first conductor 211 and the voltage at both ends of the second conductor 221 are distributed by the controller, so as to adjust the magnitude and direction of the current passing through the first conductor 211 and the second conductor 221.

[0069] Please continue reading Figure 5 In some embodiments, the coating device further includes a rotating motor 70, the sample rack 12 is connected to the rotating motor 70 and rotates under the drive of the rotating motor 70, and the mounting frame 13 forms a coating area on the side facing the sample rack 12, and multiple substrates 50 can be installed on the sample rack 12. As the sample rack 12 rotates, the multiple substrates 50 enter the coating area in sequence for sputtering.

[0070] Please continue reading Figure 5 In some embodiments, the sample holder 12 is connected to a moving assembly 40, and the moving assembly 40 is used to adjust the distance between the sample holder 12 and the mounting frame 13. Optionally, the moving assembly 40 includes a third adjusting member, and the third adjusting member is a linear driving mechanism, such as a lead screw, an electric push rod, etc., and the moving end of the third adjusting member is connected to the sample holder 12. The sample holder 12 is driven to move closer to or away from the mounting frame 13 by the third adjusting member, and the distance between the sample holder 12 and the mounting frame 13 is adjusted, that is, the distance between the substrate 50 and the target 60 is adjusted.

[0071] It should be noted that, in combination with the implementation style in which the sample holder 12 can rotate and the moving assembly 40 is connected to the sample holder 12, the driving motor 70 needs to move synchronously with the sample holder 12. For example, the rotating motor 70 is fixedly connected to the moving end of the moving assembly 40, and the output end of the rotating motor 70 is connected to the sample holder 12. The rotating motor 70 and the sample holder 12 are driven by the moving assembly 40 to synchronously approach or move away from the mounting frame 13, and the rotating motor 70 drives the sample holder 12 to rotate so that the substrate 50 rotates into the coating area.

[0072] In some embodiments, a baffle (not shown in the figure) is further provided between the mounting frame 13 and the sample holder 12. The baffle can move relative to the sputtering chamber 10 so that the baffle has a first working state and a second working state. In the first working state, the baffle covers the surface of the target 60, and in the second working state, the baffle is opened so that the target 60 is opposite to the substrate 50. Specifically, the baffle is arranged parallel to the mounting frame 13, and a receiving slot is provided on the sputtering chamber 10. The baffle can extend relative to the receiving slot so that the baffle covers the target 60, or the baffle can be retracted relative to the receiving slot so that the target 60 is exposed. The baffle can be driven to extend and retract by a manual or automatic linear drive mechanism. The linear drive mechanism can be an electric push rod, a cylinder, etc. familiar to those skilled in the art, and will not be described in detail here.

[0073] See also Figure 6 , Figure 6 1 is a schematic flow chart of a magnetron sputtering coating method in some embodiments of the present application. In some embodiments, a magnetron sputtering coating method is provided, the method comprising the following steps:

[0074] S100, placing the target material and the substrate into a vacuum chamber;

[0075] S200, configuring a first preset magnetic field, wherein the central magnetic field strength of the first preset magnetic field is greater than or less than the peripheral magnetic field strength;

[0076] S300, performing the first sputtering on the substrate;

[0077] S400, configuring a second preset magnetic field, wherein the central magnetic field strength of the second preset magnetic field is less than or equal to the edge magnetic field strength;

[0078] S500, performing a second sputtering on the substrate.

[0079] Among them, in some scenarios, the first preset magnetic field and the second preset magnetic field are both circular magnetic fields, the central magnetic field of the circular magnetic field is distributed in a circle, and the peripheral magnetic field of the circular magnetic field is distributed in a closed circular ring shape; in some scenarios, the first preset magnetic field and the second preset magnetic field are both regular polygonal magnetic fields, the central magnetic field of the polygonal magnetic field is distributed in a polygonal shape, and the peripheral magnetic field of the polygonal magnetic field is distributed in a closed polygonal ring shape.

[0080] See also Figures 7a to 7c , Figure 7a yes Figure 6 Schematic diagram of the distribution of the first preset magnetic field in the embodiment, the central magnetic field strength of the unbalanced magnetic field is greater than the peripheral magnetic field strength, the magnetic field lines are not closed, and the particles are guided to the side wall of the vacuum chamber during the sputtering process, so that the particle distribution range is wide and the particle concentration in the central area of ​​the substrate is low. The use of this unbalanced magnetic field for sputtering causes little damage to the substrate, but there is a disadvantage of slow film formation speed.

[0081] See also Figure 7b , Figure 7b yes Figure 6 Schematic diagram of the distribution of the second preset magnetic field in the embodiment. The central magnetic field strength of the unbalanced magnetic field is less than the peripheral magnetic field strength, the magnetic lines of force do not completely form a closed loop, part of the peripheral magnetic lines of force extend to the surface of the substrate, the particles move toward the periphery, and the particle concentration in the central area of ​​the substrate is low. The use of this unbalanced magnetic field for sputtering causes little damage to the substrate, it is easy to grow a hard film, and there is also the problem of slow film formation speed.

[0082] See also Figure 7c , Figure 7c yes Figure 6 Another distribution diagram of the second preset magnetic field in the embodiment is a balanced magnetic field. The center and periphery of the balanced magnetic field have the same magnetic field strength. The film growth speed on the substrate surface is fast, but the bombardment on the substrate is strong and the substrate is severely damaged.

[0083] In the related art, one of the above-mentioned magnetic fields is usually used for sputtering coating, which makes it difficult to ensure both coating efficiency and coating quality at the same time. In the present application, the substrate is sputtered twice by configuring a first preset magnetic field and a second preset magnetic field. In the first sputtering process, an unbalanced magnetic field in which the central magnetic field strength is greater than or less than the peripheral magnetic field strength is used to sputter the substrate, which can reduce damage to the substrate and form a protective layer; in the second sputtering process, a balanced magnetic field is used to further increase the film thickness, which can improve the coating efficiency compared to the coating method using an unbalanced magnetic field alone. Moreover, compared with the coating method using a balanced magnetic field alone, the protective layer formed in the present application has better contact with the previous layer on the substrate, and the density of the subsequent thin film deposited on this basis is also improved, which improves the quality of the film and thus improves the conductivity of the film.

[0084] In combination with the implementation style in which the first magnet and the second magnet in the aforementioned coating device are permanent magnets, the steps of configuring the first preset magnetic field and configuring the second preset magnetic field both include: adjusting the permanent magnetic parameters of the first magnet and / or the second magnet, and the permanent magnetic parameters include at least one of the magnet size, the magnet material, and the distance between the magnet and the target material. The following is a specific description using the adjustment of the distance between the magnet and the target material as an example, and the step of configuring the first preset magnetic field includes:

[0085] S201, adjusting the distance between the first magnet and the target material to a first distance;

[0086] S202, adjusting the distance between the second magnet and the target material to a second distance; wherein,

[0087] The second magnet is arranged on the peripheral side of the first magnet, the first magnet and the second magnet have opposite magnetic properties, and the first distance is greater than or less than the second distance.

[0088] It should be noted that the order of S201 and S202 can be interchanged. In this embodiment, the first magnet is moved by rotating the first adjusting member to adjust the distance between the first magnet and the target, and the second magnet is moved by rotating the second adjusting member to adjust the distance between the second magnet and the target. Since the first distance is greater than or less than the second distance, an unbalanced magnetic field with unequal central magnetic field strength and peripheral magnetic field strength is formed on the surface of the target.

[0089] The step of configuring the second preset magnetic field includes:

[0090] S401, adjusting the distance between the first magnet and the target material to a third distance;

[0091] S402, adjusting the distance between the second magnet and the target material to a fourth distance, wherein the third distance is equal to the fourth distance.

[0092] It should be noted that the order of step S401 and step S402 can be interchanged, and it can be understood that, based on the distance between the first magnet, the second magnet and the target material when configuring the first preset magnetic field, in some scenarios, only the first magnet or the second magnet can be moved when configuring the second preset magnetic field, that is, the third distance can be the same as the first distance or the fourth distance can be the same as the second distance. When configuring the second preset magnetic field in other scenarios, the first magnet and the second magnet can be adjusted at the same time. Exemplarily, by rotating the first adjusting member to move the first magnet in the direction close to the target material, the third distance is less than the first distance, and by rotating the second adjusting member to move the second magnet in the direction close to the target material, the fourth distance is less than the second distance, and the third distance is equal to the fourth distance, so that the target surface forms a balanced magnetic field with the same central magnetic field and peripheral magnetic field strength. And because the first magnet and the second magnet move close to the target material respectively, the central magnetic field and the peripheral magnetic field strength of the target material in the second preset magnetic field are enhanced compared with the magnetic field strength in the first preset magnetic field.

[0093] In combination with the implementation style in which the first magnet and the second magnet in the aforementioned coating device are electromagnets, the steps of configuring the first preset magnetic field and configuring the second preset magnetic field both include: adjusting the electromagnetic parameters of the first magnet and / or the second magnet, and the electromagnetic parameters include at least one of the number of coil turns, current intensity, current direction, and the distance between the magnet and the target material. The following is a specific description using the adjustment of current intensity as an example. The step of configuring the first preset magnetic field includes: respectively passing the first current and the second current into the first conductor and the second conductor, and the first current is greater than or less than the second current. Specifically, the voltage magnitude at both ends of the first conductor and the second conductor can be distributed by the controller, thereby changing the magnitude of the first current and the second current.

[0094] The step of configuring the second preset magnetic field includes: respectively passing a third current and a fourth current into the first conductor and the second conductor, and the third current is equal to the fourth current. Based on the current passed through the first conductor and the second conductor when configuring the first preset magnetic field, in some scenarios, when configuring the second preset magnetic field, only the current in the first conductor or the second conductor can be adjusted, that is, the third current can be the same as the first current or the fourth current can be the same as the second current. When configuring the second preset magnetic field in other scenarios, the current in the first conductor and the second conductor can be adjusted simultaneously by the controller, for example, the third current is greater than the first current, the fourth current is greater than the second current, and the third current is equal to the fourth current, so that the central magnetic field and the peripheral magnetic field strength of the target material in the second preset magnetic field are enhanced compared to the magnetic field strength in the first preset magnetic field.

[0095] See also Figure 8 , Figure 8 yes Figure 6 FIG. 5 is a flow chart of a specific embodiment of step S300 in FIG.

[0096] The first sputtering step of the substrate includes:

[0097] S301. Evacuate the vacuum chamber and introduce sputtering gas into the vacuum chamber. A negative pressure assembly may be used to evacuate the chamber so that the background vacuum degree is ≤5e -5 Pa.

[0098] S302, configuring a first sputtering power.

[0099] The first sputtering power is the power applied to the target material after the ion source plasmatizes the sputtering gas. The first sputtering power is low, so that the sputtering rate is low, which can reduce damage to the substrate.

[0100] S303, move the substrate to reduce the distance between the substrate and the target. The initial distance between the target and the substrate is the optimal sputtering distance between the target and the substrate under a balanced magnetic field. Reducing the distance between the substrate and the target is adjusted based on the sputtering distance between the target and the substrate under a balanced magnetic field. Due to the difference in particle concentration and distribution range under a balanced magnetic field and an unbalanced magnetic field, the optimal sputtering distance between the target and the substrate under a balanced magnetic field is greater than the optimal sputtering distance between the target and the substrate under an unbalanced magnetic field. Of course, if the initial distance is the optimal sputtering distance between the target and the substrate under an unbalanced magnetic field, this step can be omitted.

[0101] S304, start the ion source to sputter the substrate until the film deposition thickness reaches the first thickness and then stop. Specifically, before starting the ion source, start the rotary motor to rotate the sample holder, and close the baffle so that the baffle covers the surface of the target. After starting the ion source, pre-sputter for a first time to allow the sputtering gas to be fully plasmatized. The first time range is 3 to 8 minutes, and the pre-sputtering time includes but is not limited to 3 minutes, 4 minutes, 5 minutes, 6 minutes, 7 minutes, and 8 minutes. After the sputtering gas is fully plasmatized, open the baffle to allow the target to face the substrate for sputtering.

[0102] The first thickness ranges from 3 to 1000 nm, and the first thickness includes but is not limited to 3 nm, 5 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 70 nm, 80 nm, 90 nm, 100 nm, 120 nm, 150 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, and 1000 nm. The first thickness is the thickness of the protective layer formed by sputtering the substrate under an unbalanced magnetic field. A first thickness less than 3 nm may not be able to achieve the function of protecting the substrate, and a thickness greater than 1000 nm may cause excessive costs. The first thickness of the aforementioned protective layer can reduce damage to the substrate during the second sputtering process. The greater the first thickness, the better the protective effect on the substrate, but at the same time, the longer the time required for the first sputtering process, the higher the cost. Therefore, the first thickness can be adjusted according to the degree of damage to the substrate by the second sputtering, and the first thickness can be set in an appropriate range to ensure the coating quality while improving the coating quality.

[0103] See also Fig. 9 , Fig. 9 yes Figure 6 In some embodiments, the second sputtering step of the substrate includes:

[0104] S501, configure a second sputtering power, the second sputtering power is greater than the first sputtering power. The second sputtering power is greater, the number and kinetic energy of plasmas that hit the target material are greatly increased, and the sputtering effect on the target material surface is much stronger, resulting in an increase in deposition rate and a denser film layer on the substrate.

[0105] S502, move the substrate so that the distance between the substrate and the target is greater than the distance between the substrate and the target during the first sputtering process. During the first sputtering process, the distance between the substrate and the target is shortened relative to the initial distance. In step S502, the substrate is moved based on the distance between the substrate and the target during the first sputtering process. The substrate may be moved before or after the second sputtering power is configured. In combination with the implementation style in which the sample holder in the coating device is connected to a moving component, the sample holder is driven to move by the moving component, and the sample holder drives the substrate away from the target to increase the distance between the substrate and the target.

[0106] S503, start the ion source to sputter the substrate until the film deposition thickness reaches the second thickness and then stop. Specifically, before starting the ion source, start the rotary motor to rotate the sample holder and close the baffle in front of the target. After starting the ion source, pre-sputtering is performed, and after the sputtering gas is fully plasmatized, the baffle is opened for sputtering. The second thickness can be determined according to the actual required film thickness, which is not limited here.

[0107] Some embodiments of the present application use the above method to compare with the coating products obtained by single magnetic field sputtering, and the specific process is as follows:

[0108] Comparative Example

[0109] Using ITO (In2O3:SnO2=9:1) round target, adjusting the first magnet and the second magnet, making the central magnetic field strength and the peripheral magnetic field strength both 400GS, adjusting the distance between the target and the substrate to 8cm, placing the substrate in the center of the magnetic field, and evacuating the vacuum chamber to make the background vacuum degree ≤5e -5 Pa. Sputtering gas (argon and oxygen) was introduced, RF power was turned on, and the sputtering power was set to 3W / cm 2 , so that the vacuum degree is 5e -1 Pa. The sample holder was turned on and the baffle in front of the target was closed. After pre-sputtering for 5 minutes, the baffle was opened and sputtering was performed until the film thickness was about 200 nm.

[0110] Example 1

[0111] Use ITO (In2O3:SnO2=9:1) round target, adjust the first magnet and the second magnet to make the central magnetic field strength 400GS, the peripheral magnetic field strength 200GS, shorten the distance between the target and the substrate to 5cm, place the substrate in the center of the magnetic field, and evacuate the vacuum chamber to make the background vacuum degree ≤5e-5 Pa. Sputtering gas (argon and oxygen) was introduced, the RF power was turned on, and the first sputtering power was set to 2.8 W / cm 2 , so that the vacuum degree is 5e -1 Pa. Turn on the sample holder and close the baffle in front of the target. After pre-sputtering for 5 minutes, open the baffle to sputter the base film until the film thickness is about 50nm. Then adjust the first and second magnets so that the central magnetic field strength and the peripheral magnetic field strength are both 400GS, and increase the distance between the target and the substrate to 8cm. Turn on the RF power supply and configure the second sputtering power to 3.2W / cm 2 , start the sample holder rotation and close the baffle in front of the target material. After pre-sputtering for 5 minutes, open the baffle in front of the target material and continue sputtering to increase the film thickness to about 150nm.

[0112] Example 2

[0113] Use ITO (In2O3:SnO2=9:1) circular target, adjust the first magnet and the second magnet, make the central magnetic field strength 400GS, the peripheral magnetic field strength 200GS, shorten the distance between the target and the substrate to 6cm, and configure the first sputtering power to 3W / cm 2 , so that the vacuum degree is 5e -1 Pa. After 5 minutes of pre-sputtering, the base film was sputtered to a film thickness of about 40 nm. The first and second magnets were adjusted so that the central magnetic field strength and the peripheral magnetic field strength were both 400 GS, and the distance between the target and the substrate was increased to 9 cm. The second sputtering power was set to 3.5 W / cm 2 After pre-sputtering for 5 minutes, the baffle in front of the target was opened to continue sputtering, increasing the film thickness to about 160nm.

[0114] Example 3

[0115] Use ITO (In2O3:SnO2=9:1) circular target, adjust the first magnet and the second magnet, make the central magnetic field strength 200GS, the peripheral magnetic field strength 400GS, shorten the distance between the target and the substrate to 5cm, and configure the first sputtering power to 2.8W / cm 2 , so that the vacuum degree is 5e -1 Pa. After 5 minutes of pre-sputtering, the base film was sputtered to a film thickness of about 50 nm. The first and second magnets were adjusted so that the central magnetic field strength and the peripheral magnetic field strength were both 400 GS, and the distance between the target and the substrate was increased to 8 cm. The second sputtering power was set to 3.2 W / cm 2 After pre-sputtering for 5 minutes, the baffle in front of the target was opened to continue sputtering, increasing the film thickness to about 150nm.

[0116] Example 4

[0117] Use ITO (In2O3:SnO2=9:1) circular target, adjust the first magnet and the second magnet, make the central magnetic field strength 200GS, the peripheral magnetic field strength 400GS, shorten the distance between the target and the substrate to 6cm, and configure the first sputtering power to 3W / cm 2 , so that the vacuum degree is 5e -1 Pa. After 5 minutes of pre-sputtering, the base film was sputtered to a film thickness of about 40 nm. The first and second magnets were adjusted so that the central magnetic field strength and the peripheral magnetic field strength were both 400 GS, and the distance between the target and the substrate was increased to 9 cm. The second sputtering power was set to 3.5 W / cm 2 After pre-sputtering for 5 minutes, the baffle in front of the target was opened to continue sputtering, increasing the film thickness to about 160nm.

[0118] The differences between the above five coating products during the sputtering process are the magnetic field distribution, the first sputtering power, the second sputtering power, the first thickness, and the distance between the target and the substrate, as shown in Table 1 below.

[0119] Table 1:

[0120]

[0121] In Table 1, the comparative example is obtained by adopting a single balanced magnetic field coating method without adjusting the magnetic field during the conventional magnetron sputtering coating process. Examples 1 to 4 are all obtained according to the coating method of the present application. The resistivity of Examples 1 to 4 is lower than that of the comparative example, that is, the ITO film prepared by this method has a low resistivity.

[0122] In some embodiments, a coating product is provided, which is obtained by coating using the aforementioned magnetron sputtering coating method. Based on the conventional magnetron sputtering coating process without adjusting the magnetic field, that is, using Figure 7c The resistivity of the deposited ITO film is as low as about 5e. -4 Ω*cm. The resistivity of the ITO film prepared according to this method is as low as about 8e -5 Ω*cm, the ITO film prepared by this method has low resistivity and high conductivity.

[0123] The above are only some embodiments of the present application, and the protection scope of the present application is not limited thereto. Any equivalent device or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A magnetron sputtering coating method, characterized in that: The method comprises the following steps: placing the target material and the substrate into a vacuum chamber; Configure a first preset magnetic field, wherein the central magnetic field strength of the first preset magnetic field is greater than or less than the peripheral magnetic field strength; performing a first sputtering on the substrate; Configuring a second preset magnetic field, wherein the central magnetic field strength of the second preset magnetic field is equal to the peripheral magnetic field strength; The substrate is sputtered a second time.

2. The magnetron sputtering coating method according to claim 1, characterized in that: The first preset magnetic field and the second preset magnetic field are both circular magnetic fields, the central magnetic field of the circular magnetic field is distributed in a circular shape, and the peripheral magnetic field of the circular magnetic field is distributed in a closed circular ring shape; Or the first preset magnetic field and the second preset magnetic field are both polygonal magnetic fields, the central magnetic field of the polygonal magnetic field is distributed in a polygonal shape, and the peripheral magnetic field of the polygonal magnetic field is distributed in a closed polygonal ring shape.

3. The magnetron sputtering coating method according to claim 1, characterized in that: The first magnet and the second magnet are permanent magnets with opposite magnetic properties. The steps of configuring the first preset magnetic field and configuring the second preset magnetic field both include: adjusting the permanent magnetic parameters of the first magnet and / or the second magnet, and the permanent magnetic parameters include at least one of the magnet size, the magnet material, and the distance between the magnet and the target material.

4. The magnetron sputtering coating method according to claim 1, characterized in that: The first magnet and the second magnet are electromagnets with opposite magnetic properties, and the steps of configuring the first preset magnetic field and configuring the second preset magnetic field both include: adjusting the electromagnetic parameters of the first magnet and / or the second magnet, and the electromagnetic parameters include at least one of the number of coil turns, current intensity, current direction, and the distance between the magnet and the target material.

5. The magnetron sputtering coating method according to any one of claims 1 to 4, characterized in that: The first sputtering step of the substrate includes: evacuating the vacuum chamber and introducing a sputtering gas into the vacuum chamber; configuring a first sputtering power; starting an ion source to sputter the substrate until the film deposition thickness reaches a first thickness and then stopping; The second sputtering step for the substrate includes: configuring a second sputtering power, the second sputtering power is greater than the first sputtering power; starting the ion source to sputter the substrate until the film deposition thickness reaches a second thickness and then stopping.

6. The magnetron sputtering coating method according to claim 5, characterized in that: The first thickness ranges from 3 to 1000 nm.

7. The magnetron sputtering coating method according to claim 5, characterized in that: The step of performing a second sputtering on the substrate further includes: before starting the ion source, moving the substrate so that the distance between the substrate and the target material is greater than the distance between the substrate and the target material during the first sputtering process.

8. The magnetron sputtering coating method according to claim 5, characterized in that: The step of performing the first sputtering on the substrate further includes: closing the baffle in front of the target before starting the ion source, and opening the baffle after starting the ion source for pre-sputtering for a first period of time.

9. A coated product, characterized in that: The coated product is obtained by coating using the magnetron sputtering coating method as described in any one of claims 1 to 8.

10. A film coating device, characterized in that: include: A sputtering chamber, the sputtering chamber comprising a vacuum chamber, a sample rack and a mounting rack being arranged in the vacuum chamber, the sample rack being used to mount a substrate, and the mounting rack being used to mount a target material; A magnetron assembly, the magnetron assembly is arranged in the vacuum chamber, the magnetron assembly comprises a first magnet and a second magnet, the second magnet is arranged on the periphery of the first magnet, and the first magnet and the second magnet have opposite magnetic properties; An adjusting component is connected to the magnetron component and is used to adjust the magnetic field strength between the first magnet, the second magnet and the target material.

11. The coating device according to claim 10, characterized in that: The adjustment component comprises: a first adjusting member, the first adjusting member being connected to the first magnet and being used to drive the first magnet to approach or move away from the target; A second adjusting member is connected to the second magnet and is used to drive the second magnet to move closer to or away from the target.

12. The coating device according to claim 10 or 11, characterized in that: The first magnet and the second magnet are electromagnets, wherein: The first magnet includes a first conductor and a first power source, wherein the first conductor is electrically connected to the first power source so as to generate a current in the first conductor; The second magnet includes a second conductor and a second power source. The second conductor is electrically connected to the second power source to generate a current in the second conductor. The magnetic field generated by the current in the first conductor is opposite in direction to the magnetic field generated by the current in the second conductor.

13. The coating device according to claim 11, characterized in that: The regulating component includes a controller, which is electrically connected to the first power supply and the second power supply to regulate the intensity and direction of the magnetic field generated by the current in the first conductor and the second conductor.

14. The coating device according to claim 10, characterized in that: The sample rack is connected with a moving component, and the moving component is used to adjust the distance between the sample rack and the mounting rack.

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