Silicon carbide semiconductor device integrated with temperature sensor
By integrating the diode structure as a temperature sensor in the silicon carbide device, the problem of heat accumulation in the silicon carbide device under high voltage and high current conditions is solved, and the accuracy of high temperature temperature detection and device reliability are improved.
Patent Information
- Application Number
- CN202323520066.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-22
- Publication Date
- 2025-01-10
- Estimated Expiration
- 2033-12-22
AI Technical Summary
Existing silicon carbide devices are prone to heat accumulation under high voltage and high current working conditions, resulting in degradation of working performance. The existing temperature detection methods are not timely or inaccurate, affecting the reliability of the device.
Integrate the temperature sensor into the silicon carbide device, use the diode structure as the temperature sensor, and add the T-pole conductive region to the source conductive layer, and realize temperature monitoring through the silicon carbide material, reducing circuit overhead and improving detection accuracy.
The high-temperature temperature detection of silicon carbide devices is realized, which reduces errors, enhances the reliability of the device, and is compatible with existing processes, with good linearity and high-temperature resistance.
Smart Images
Figure CN222339882U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of silicon carbide devices, in particular to a silicon carbide semiconductor device with an integrated temperature sensor. Background Art
[0002] The third-generation semiconductor material silicon carbide (SiC) is known for its high temperature, high pressure and high frequency resistance due to its wide bandgap, strong thermal stability, high thermal conductivity and strong radiation resistance. It has a wide range of application prospects in the field of power semiconductors and has become the forefront of semiconductor material technology research and the focus of industrial competition. This article discusses in detail the production method, research progress and industrialization status of the third-generation semiconductor material silicon carbide (SiC), proposes the direction of future efforts and solutions, and looks forward to its future development trend and application prospects.
[0003] SiC power devices mainly include SiC diodes, SiC switching tubes and SiC power modules, mainly in through-hole (TO) packaging. At present, 600-1700V silicon carbide (SiC) Schottky barrier diodes (SBD) and metal oxide semiconductor field effect transistors (MOSFET) have been industrialized on a large scale internationally. The current voltage resistance level of mainstream products is less than 2000V.
[0004] Silicon carbide devices are often used in high-voltage and high-current working conditions, as well as in the manufacture of high-power power modules. They generate a lot of heat when they are repeatedly turned on and off. If there is a lack of timely regulation, the accumulation of heat will degrade the working performance of the device and affect the reliability of the device. Timely detection and regulation of the working temperature of the device is of great practical significance for the manufacture of high-reliability power modules.
[0005] The existing detection of the working temperature of silicon carbide devices is achieved through peripheral circuits or sensor detection. The use of peripheral circuits for detection increases the circuit overhead and the detection is not timely; the use of sensors for detection is for package temperature detection, which cannot accurately reflect the temperature of the silicon carbide device in the package and is prone to errors. Due to its excellent material properties, silicon carbide can be used to produce high-temperature temperature sensors, so the temperature sensor can be integrated into the silicon carbide device to achieve accurate temperature detection of the silicon carbide device. Utility Model Content
[0006] The utility model aims at the shortcomings of the prior art and provides a silicon carbide semiconductor device with an integrated temperature sensor.
[0007] In order to solve the above technical problems, the utility model is solved by the following technical solutions:
[0008] A silicon carbide semiconductor device with an integrated temperature sensor includes an N-type silicon carbide substrate layer and an N-type silicon carbide epitaxial layer located on the N-type silicon carbide substrate layer, at least two P+ injection regions are provided on the N-type silicon carbide epitaxial layer, an N+ injection region is provided on the P+ injection region, a source conductive layer is provided on the P+ injection region on one side, and a T-pole conductive region is provided on the P+ injection region on the other side. A diode is integrated in the source region of the silicon carbide device structure as a temperature sensor, the diode structure of the N+ injection region and the source conductive layer is utilized, the diode is utilized as a temperature sensor, the temperature sensor is integrated into the source conductive layer of the silicon carbide device, and a T-pole conductive region is added to the sensor, so that the device temperature can be monitored with only one more electrode, by utilizing silicon carbide material as a temperature sensor.
[0009] Preferably, the N+ implantation region includes a device N+ implantation region and a temperature sensor N+ implantation region, the source conductive layer is located on the device N+ implantation region and the P+ implantation region, and the T-pole conductive region is located on the temperature sensor N+ implantation region.
[0010] Preferably, a Pwell type injection region is further included, the Pwell type injection region is located on the N type silicon carbide epitaxial layer, and the N+ injection region and the P+ injection region are located on the Pwell type injection region.
[0011] Preferably, a gate oxide layer and a gate material layer are sequentially provided on the N-type silicon carbide epitaxial layer from bottom to top, the gate oxide layer is in contact with the N+ implantation region, and the gate material layer is located above the gate oxide layer; a gate metal is led out from the upper surface of the gate material layer.
[0012] Preferably, it also includes an insulating dielectric layer, which is arranged outside the gate material layer, the source conductive layer and the T-pole conductive region.
[0013] Preferably, a drain conductive region is provided on the back side of the N-type silicon carbide substrate layer; a drain electrode is led out from the upper surface of the drain conductive region.
[0014] Preferably, a source electrode is led out from the upper surface of the source conductive layer.
[0015] The utility model has significant technical effects due to the adoption of the above technical solutions: compared with the existing silicon carbide devices, in order to integrate the temperature sensor into the silicon carbide device, the present application uses a diode as a temperature sensor, integrates the temperature sensor into the source region of the silicon carbide device, and adds a T electrode separately for the sensor. By using silicon carbide material as a temperature sensor, a high-temperature resistant temperature sensor is realized, and the diode Vf value and temperature have good linearity; in addition, by integrating the sensor in the source region, the device operating temperature detection is realized, and the influence of the sensor on other parameters of the silicon carbide device is eliminated, the layout overhead is minimized, and it has good compatibility with the existing silicon carbide device manufacturing process. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 It is a structural schematic diagram of the utility model.
[0017] Figure 2 yes Figure 1 Partial structure diagram Figure Ⅰ .
[0018] Figure 3 yes Figure 1 Partial structure diagram Figure II .
[0019] The names of the parts indicated by the numerical labels in the accompanying drawings are as follows: 101—drain conductive region, 102—N-type silicon carbide substrate layer, 103—N-type silicon carbide epitaxial layer, 104—Pwell type injection region, 105—P+ injection region, 106—source conductive layer, 107—insulating dielectric layer, 108—gate material layer, 109—N+ injection region, 110—T pole conductive region, 111—gate oxide layer, 112—gate metal. DETAILED DESCRIPTION
[0020] The utility model is further described in detail below in conjunction with the accompanying drawings and embodiments.
[0021] Example 1
[0022] A silicon carbide semiconductor device with an integrated temperature sensor, as shown in the figure, includes an N-type silicon carbide substrate layer 102 and an N-type silicon carbide epitaxial layer 103 located on the N-type silicon carbide substrate layer 102, two left and right P+ injection regions 105 are provided on the N-type silicon carbide epitaxial layer 103, an N+ injection region 109 is provided on the P+ injection region 105, a source conductive layer 106 is provided on the left P+ injection region 105, and a source conductive layer 106 and a T-pole conductive region 110 are provided on the right P+ injection region 105. A diode is integrated in the source region of the silicon carbide device structure as a temperature sensor, and the diode structure of the N+ injection region 109 and the source conductive layer 106 is utilized. The diode is utilized as a temperature sensor, and the temperature sensor is integrated into the source conductive layer 106 of the silicon carbide device, and a T-pole conductive region 110 is added to the sensor, so that the device temperature can be monitored with only one more electrode, by utilizing the silicon carbide material as a temperature sensor.
[0023] The N+ implantation region 109 includes a device N+ implantation region and a temperature sensor N+ implantation region. The source conductive layer 106 is located on the device N+ implantation region and the P+ implantation region 105. The T-pole conductive region 110 is located on the temperature sensor N+ implantation region.
[0024] It also includes a Pwell type implantation region 104 , which is located on the N type silicon carbide epitaxial layer 103 , and an N+ implantation region 109 and a P+ implantation region 105 which are located on the Pwell type implantation region 104 .
[0025] A source electrode is drawn out from the upper surface of the source conductive layer 106 .
[0026] When a diode is integrated in the source region of the silicon carbide device structure as a temperature sensor, the parameters of the device itself are not affected, and the process implementation cost is not increased. The integrated diode structure is easy to implement and has good compatibility with the existing silicon carbide device manufacturing process. The integrated diode Vf value and temperature have good linearity, as shown in the following table, which can well monitor the temperature changes of the device.
[0027]
[0028] Added linear relationship diagram of integrated diode Vf value and temperature characteristics
[0029] Example 2
[0030] The same as Example 1, except that a gate oxide layer 111 and a gate material layer 108 are sequentially arranged on the N-type silicon carbide epitaxial layer 103 from bottom to top, the left and right sides of the gate oxide layer 111 are respectively in contact with the N+ injection regions 109 on the left and right sides, and the gate material layer 108 is located above the gate oxide layer 111; a gate metal 112 is led out from the upper surface of the gate material layer 108.
[0031] Example 3
[0032] The embodiment is the same as the first embodiment, except that it further includes an insulating dielectric layer 107 , and the insulating dielectric layer 107 is arranged outside the gate material layer 108 , the source conductive layer 106 and the T-pole conductive region 110 .
[0033] Example 4
[0034] The embodiment is the same as the first embodiment, except that a drain conductive region 101 is provided on the back side of the N-type silicon carbide substrate layer 102 ; a drain electrode is led out from the upper surface of the drain conductive region 101 .
[0035] In short, the above is only a preferred embodiment of the present utility model, and all equivalent changes and modifications made according to the scope of the patent application of the present utility model should fall within the scope of the present utility model patent.
Claims
1. A silicon carbide semiconductor device with an integrated temperature sensor, comprising an N-type silicon carbide substrate layer (102) and an N-type silicon carbide epitaxial layer (103) located on the N-type silicon carbide substrate layer (102), characterized in that: At least two P+ injection regions (105) are provided on the N-type silicon carbide epitaxial layer (103), an N+ injection region (109) is provided on the P+ injection region (105), a source electrode conductive layer (106) is provided on the P+ injection region (105) on one side, and a T electrode conductive region (110) is provided on the P+ injection region (105) on the other side.
2. The silicon carbide semiconductor device with integrated temperature sensor according to claim 1, characterized in that: The N+ injection region (109) includes a device N+ injection region and a temperature sensor N+ injection region, the source conductive layer (106) is located on the device N+ injection region, and the T-pole conductive region (110) is located on the temperature sensor N+ injection region.
3. The silicon carbide semiconductor device with integrated temperature sensor according to claim 1, characterized in that: It also includes a Pwell type injection region (104), the Pwell type injection region (104) is located on the N type silicon carbide epitaxial layer (103), and the N+ injection region (109) and the P+ injection region (105) are located on the Pwell type injection region (104).
4. The silicon carbide semiconductor device with integrated temperature sensor according to claim 1, characterized in that: A gate oxide layer (111) and a gate material layer (108) are sequentially arranged on the N-type silicon carbide epitaxial layer (103); the gate oxide layer (111) is in contact with the N+ implantation region (109); the gate material layer (108) is located above the gate oxide layer (111); and a gate metal (112) is drawn out from the upper surface of the gate material layer (108).
5. The silicon carbide semiconductor device with integrated temperature sensor according to claim 4, characterized in that: It also includes an insulating dielectric layer (107), which is arranged outside the gate material layer (108), the source conductive layer (106) and the T-pole conductive region (110).
6. The silicon carbide semiconductor device with integrated temperature sensor according to claim 1, characterized in that: A drain conductive region (101) is provided on the back side of the N-type silicon carbide substrate layer (102); a drain electrode is led out from the upper surface of the drain conductive region (101).
7. The silicon carbide semiconductor device with integrated temperature sensor according to claim 1, characterized in that: A source electrode is drawn out from the upper surface of the source conductive layer (106).