Silicon-based fluorescent film production equipment

Abstract

The utility model discloses silicon-based fluorescent film production equipment, and relates to the technical field of silicon-based fluorescent film production. The device comprises a frame, a tank body is arranged above the frame, an upper polar plate and a lower polar plate are respectively arranged above and below the tank body, a cavity formed by combining the upper polar plate and the lower polar plate is a growth cavity, the lower polar plate is electrically connected with a heating structure, and the heating structure is electrically connected with the tank body. And a plurality of substrates positioned in the growth cavity are arranged above the lower polar plate. According to the heating mechanism disclosed by the utility model, different substrate areas can be independently heated by adopting a zoning technology, the temperature distribution in the growth process is favorably optimized, the uniformity and the quality of film growth are improved, energy waste caused by heating of the whole area can be avoided, and the heating efficiency is greatly improved only by accurately controlling the area needing to be heated. The energy utilization rate is improved, the energy consumption is reduced, and the experiment cost is reduced.

Description

Technical Field

[0001] The utility model belongs to the field of silicon-based fluorescent film production, and specifically relates to silicon-based fluorescent film production equipment. Background Art

[0002] As the size of MOSFET components gradually decreases, the SiO2 insulating layer in the component has approached the limit of its material physical properties. In order to maintain the insulation effect, SiOxNy and some high dielectric constant materials are used to replace traditional SiO2 and other materials as the gate dielectric layer of MOSFET. By changing the mixing ratio x / y of O and N, SiOxNy has adjustable composition structure, so that SiOxNy film has good and variable photoelectric properties, mechanical properties and chemical stability.

[0003] A silicon-based ferroelectric thin film manufacturing production equipment with automatic loading and unloading is disclosed in the publication number CN219919631U. Although the film picking mechanism includes a lifting and feeding structure and a picking structure, the lifting and feeding structure carries a number of silicon wafers to be coated, and the picking structure is provided with a fork picking part. The lifting and feeding structure transports the silicon wafers to be coated to the corresponding forking position of the fork picking part through lifting and adjustment, so as to facilitate the fork picking part on the picking structure to fork the material.

[0004] However, the automatic loading and unloading silicon-based ferroelectric thin film manufacturing equipment has the following disadvantages:

[0005] First, the reference document uses an overall area heater, which has the problem of inefficient energy transmission because the entire area is heated even if only a specific area needs to be heated. This not only leads to a waste of energy, but also may increase the cost of the experiment because more energy is required to maintain the heating operation.

[0006] Secondly, the comparative patent failed to fully consider the optimized path of gas flow, and failed to effectively mix various precursor gases, which resulted in uneven distribution of reactants during the growth process, thus affecting the growth rate and quality of the film.

[0007] In view of this, the present utility model is proposed. Utility Model Content

[0008] The technical problem to be solved by the utility model is to overcome the deficiencies of the prior art and provide a silicon-based fluorescent film production device to solve the problems raised in the above-mentioned background technology.

[0009] In order to solve the above technical problems, the basic concept of the technical solution adopted by the utility model is:

[0010] A silicon-based fluorescent film production device comprises: a frame, a tank body is installed above the frame, an upper electrode plate and a lower electrode plate are respectively arranged above and below the inside of the tank body, a cavity formed by combining the upper electrode plate and the lower electrode plate is a growth cavity, a heating structure is electrically connected below the lower electrode plate, a plurality of substrates located inside the growth cavity are arranged above the lower electrode plate, and a radio frequency device is electrically connected above the upper electrode plate;

[0011] A branch pipe group is installed on the first side of the outer wall of the tank body, each branch pipe of the branch pipe group is provided with a mass flow meter, a second side of the outer wall of the tank body is connected to a liquid nitrogen cold trap through a pipeline, and a side of the liquid nitrogen cold trap away from the tank body is connected to a vacuum unit;

[0012] The growth chamber is used to store charges and generate and excite plasma when a radio frequency electric field is applied.

[0013] Optionally, the RF device is composed of a RF power supply and a RF matcher, wherein the RF power supply and the RF matcher are electrically connected, and the RF power supply and the upper electrode plate are electrically connected.

[0014] Optionally, the heating structure includes a heating plate located below the lower electrode plate, a plurality of heating grooves are provided on the surface of the heating plate, a heat-conducting copper plate is sleeved inside the heating groove, and an electric heating network is fixedly connected to the bottom surface of the heat-conducting copper plate.

[0015] Optionally, the substrate is located at the grounded anode of the lower electrode plate, and a side of the substrate facing the upper electrode plate is a rough surface.

[0016] Optionally, the branch pipe group includes an air inlet pipe connected to the tank body, the air inlet of the air inlet pipe is connected to a spiral pipe, the air inlet of the spiral pipe is connected to four precursor reaction gas branch pipes, and the circumferential side of the air inlet pipe is connected to an L-shaped pipe.

[0017] Optionally, the vacuum unit includes a rotary vane mechanical pump and a mechanical booster pump, the rotary vane mechanical pump is located between the mechanical booster pump and the liquid nitrogen cold trap, and the mechanical booster pump and the liquid nitrogen cold trap are connected through a pipeline.

[0018] After adopting the above technical solution, the utility model has the following beneficial effects compared with the prior art. Of course, any product implementing the utility model does not necessarily need to achieve all the advantages described below at the same time:

[0019] 1. The heating mechanism in the present application adopts zoning technology to enable independent heating of different substrate areas, which is beneficial to optimizing the temperature distribution during the growth process, improving the uniformity and quality of thin film growth, and avoiding energy waste caused by heating of the entire area. Only precise control is required for the area that needs to be heated, which helps to improve energy utilization, reduce energy consumption, and reduce experimental costs.

[0020] 2. By setting up a branch pipe group, when SiH4, NH3, N2 and O2 enter the growth chamber, the reaction gas will pass through a longer path, so that the four materials have enough time to mix during the transmission process. This setting helps to improve the uniformity of gas mixing and the stability of the flow field during the vapor deposition process.

[0021] The specific implementation of the utility model is further described in detail below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The drawings described below are only some embodiments. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0023] In the figure:

[0024] Figure 1 It is a schematic diagram of the structure of the thin film growth system;

[0025] Figure 2 It is a schematic diagram of the three-dimensional structure on the left side of the film production equipment;

[0026] Figure 3 It is a schematic diagram of the three-dimensional structure on the right side of the film production equipment;

[0027] Figure 4 It is a schematic diagram of the partial cross-section structure of the tank in the film production equipment;

[0028] Figure 5 Schematic diagram of the explosion structure of the heating plate.

[0029] In the accompanying drawings, the components represented by the reference numerals are listed as follows:

[0030] 1. Frame; 2. Tank; 3. Upper electrode plate; 4. Lower electrode plate; 5. Growth chamber; 6. Heating structure; 601. Heating plate; 602. Heating tank; 603. Thermal conductive copper plate; 604. Electric heating network; 605. Heating power supply; 7. Substrate; 8. RF device; 801. RF power supply; 802. RF matcher; 9. Branch pipe group; 901. Air inlet pipe; 902. Precursor reaction gas branch pipe; 903. Spiral pipe; 904. L-shaped pipe; 905. Mass flow meter; 10. Liquid nitrogen cold trap; 11. Vacuum unit; 1111. Rotary vane mechanical pump; 1112. Mechanical booster pump.

[0031] It should be noted that these drawings and textual descriptions are not intended to limit the conceptual scope of the present invention in any way, but rather to illustrate the concept of the present invention for those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0032] The utility model will now be further described in detail with reference to the accompanying drawings.

[0033] See also Figure 1-5 As shown, in this embodiment, a silicon-based fluorescent film production device is provided, including a frame 1, a tank body 2 is installed above the frame 1, and an upper plate 3 and a lower plate 4 are respectively arranged above and below the inside of the tank body 2, wherein the cavity formed by the combination of the upper plate 3 and the lower plate 4 is a growth cavity 5, and the growth cavity 5 is used to store charges and generate and excite plasma when a radio frequency electric field is applied. Specifically, the spacing between the upper plate 3 and the lower plate 4 is 2.5 cm.

[0034] A heating structure 6 is electrically connected to the bottom of the lower electrode plate 4. A plurality of substrates 7 located inside a growth chamber 5 are arranged above the lower electrode plate 4. The substrate 7 is used as a base for thin film deposition growth. The material of the substrate 7 is p-Si and quartz. The heating structure 6 can heat the substrate 7 through the lower electrode plate 4 to achieve precise control of the temperature of the substrate 7, which is conducive to achieving the growth conditions of p-Si and quartz.

[0035] More specifically, before the samples were placed in the growth chamber 5, various substrates 7 were pre-treated with argon ignition at room temperature for 1 minute, with a radio frequency power of 30 W and a reaction gas pressure of 540 mTorr.

[0036] The upper electrode plate 3 is electrically connected to a radio frequency device 8 , which generates plasma for the gas in the reaction chamber, thereby realizing a plasma enhanced chemical vapor deposition reaction process, which is helpful for the growth of the thin film.

[0037] A branch pipe group 9 is installed on the upper side of the outer wall of the tank body 2. A mass flow meter 905 is provided at each branch pipe of the branch pipe group 9. The branch pipe group 9 includes an air inlet pipe 901 connected to the tank body 2. The air inlet pipe 901 is a Z-shaped pipe. The air inlet of the air inlet pipe 901 is connected to a spiral pipe 903. The air inlet of the spiral pipe 903 is connected to four precursor reaction gas branch pipes 902. The circumference of the air inlet pipe 901 is connected to an L-shaped pipe 904. When SiH4, NH3, N2, O2 and Ar are input into the growth chamber 5, the length of the spiral pipe 903 is extended, so that the four materials have enough time to mix in the pipeline. It is helpful to improve the uniformity of gas mixing and the stability of the flow field during the vapor deposition process.

[0038] To further illustrate, the mass flow meter 905 is located at the precursor reaction gas branch pipe 902 and the L-shaped tube 904, and the flow rate of the precursor gas can be accurately controlled by the mass flow meter 905. The precursor reaction gas includes SiH4, NH3, N2, and O2, and the reaction gas transmitted in the L-shaped tube 904 is Ar. The mass flow meter 905 adopts the MT3809 of the Brooks Instrument manufacturer, and the control method of the mass flow meter 905 adopts the patent document CN102759932B disclosed in the prior art.

[0039] The substrate 7 temperature, RF power and reaction gas pressure are controlled at 250°C, 20W and 0.58Torr respectively.

[0040] One aspect of the application of this embodiment is: SiH4, NH3, N2, O2 and Ar are input into the growth chamber 5 through the precursor reaction gas branch pipe 902. Subsequently, the substrate 7 is heated using the heating structure 6 so that the precursor reaction gas undergoes a chemical reaction on the surface of the substrate 7 and forms a thin film. After the sample growth is completed, an oxygen atmosphere is injected into the growth chamber 5, and the radio frequency device 8 is started to perform in-situ plasma oxidation of the thin film in the oxygen atmosphere to complete the post-processing of the thin film. It should be noted that all electrical equipment involved in this application can be powered by a battery or an external power supply.

[0041] During the experiment, the flow rates of SiH4 and N2 were precisely controlled at 2 sccm and 80 sccm, respectively. By changing the gas flow ratio R of ammonia and silane (R = NH3 / SiH4), the N / Si atomic ratio in the a-SiNx:O film samples was regulated. The specific flow parameters of ammonia for different a-SiNx:O film samples are shown in Table 1.

[0042]

[0043] Table 1 Specific flow parameters of ammonia gas and corresponding sample film thickness when preparing a-SiNx:O films with different components.

[0044] like Figure 4 As shown, in this embodiment, the radio frequency device 8 is composed of a radio frequency power supply 801 and a radio frequency matcher 802, wherein the radio frequency power supply 801 and the radio frequency matcher 802 are electrically connected, and the radio frequency matcher 802 can adjust the parameters of the radio frequency circuit to ensure that the energy output by the radio frequency power supply 801 can be transmitted to the upper plate 3 to the greatest extent. This can improve the efficiency and stability of the reaction.

[0045] The RF power supply 801 is electrically connected to the upper electrode plate 3. The connection between the RF power supply 801 and the upper electrode plate 3 can reduce the load on the RF power supply 801 and protect it from the influence of environmental changes in the reaction chamber, thereby extending the service life of the production equipment.

[0046] The model of the radio frequency power supply 801 is SY type RF300W (frequency f=13.56MHz), and the model of the radio frequency matching device 802 is SPⅡ type.

[0047] like Figure 1 As shown, in this embodiment, the substrate 7 is located at the grounded anode of the lower plate 4. By placing the substrate 7 at the grounded anode of the lower plate 4, a more stable electric field environment can be provided, which helps to keep the plasma in the reaction chamber stable and uniform.

[0048] The side of the substrate 7 facing the upper electrode plate 3 is a rough surface. By controlling the rough surface of the substrate 7, the interaction between the substrate 7 and the reaction gas can be adjusted, thereby achieving precise control of the thin film growth process.

[0049] like Figure 2-4 As shown, in this embodiment, the lower side of the outer wall of the tank body 2 is connected to the liquid nitrogen cold trap 10 through a pipeline, and the side of the liquid nitrogen cold trap 10 away from the tank body 2 is connected to the vacuum unit 11. The vacuum unit 11 includes a rotary vane mechanical pump 1111 and a mechanical booster pump 1112, the rotary vane mechanical pump 1111 is located between the mechanical booster pump 1112 and the liquid nitrogen cold trap 10, and the mechanical booster pump 1112 and the liquid nitrogen cold trap 10 are connected through a pipeline. By installing the rotary vane mechanical pump 1111 between the mechanical booster pump 1112 and the liquid nitrogen cold trap 10, the influence of high-temperature gas and pollutants on the mechanical booster pump 1112 and the liquid nitrogen cold trap 10 can be reduced, and their service life can be extended. Connecting the rotary vane mechanical pump 1111 with the mechanical booster pump 1112 and the liquid nitrogen cold trap 10 through a pipeline helps to ensure smooth gas flow in the system and reduce the risk of gas leakage.

[0050] Embodiment 1: The substrate 7 above the lower electrode plate 4 is heated by the heating plate 601;

[0051] In this embodiment, the heating structure 6 includes a heating plate 601 located below the lower plate 4, and a plurality of heating grooves 602 are provided on the surface of the heating plate 601. A heat-conducting copper plate 603 is sleeved inside the heating groove 602, and an electric heating network 604 is fixedly connected to the bottom surface of the heat-conducting copper plate 603. During the heating process, a single electric heating network 604 can emit temperature, and then the high temperature is transferred to the substrate 7 above the lower plate 4 through the heat-conducting copper plate 603 to heat it. This solution divides the heater into multiple independent heating areas to accurately control the temperature of different substrate 7 areas. And the corresponding control method adopts the patent document with publication number CN115257033A.

[0052] By adopting the zoning technology, different substrate 7 areas can be independently temperature controlled, which is beneficial to optimize the temperature distribution during the growth process, improve the uniformity and quality of thin film growth, and avoid energy waste caused by heating the entire area. Only precise control is required for the area that needs heating, which helps to improve energy utilization, reduce energy consumption, and reduce experimental costs.

[0053] Embodiment 2: The substrate 7 above the lower electrode plate 4 is heated by a heating power source 605;

[0054] In this embodiment, the heating structure 6 includes a heating power supply 605 located below the lower electrode plate 4, and the heating power supply 605 adopts the patent document with publication number CN111917324A in the prior art.

[0055] The present invention is not limited to the above-mentioned implementation modes. Anyone should be aware of the structural changes made under the inspiration of the present invention. Any technical solution that is the same or similar to the present invention falls within the protection scope of the present invention. The technology, shape, and structure that are not described in detail in the present invention are all known technologies.

Claims

1. A silicon-based fluorescent film production device, characterized in that: include: A frame (1), a tank body (2) is installed above the frame (1), an upper electrode plate (3) and a lower electrode plate (4) are respectively arranged above and below the inside of the tank body (2), a cavity formed by combining the upper electrode plate (3) and the lower electrode plate (4) is a growth cavity (5), a heating structure (6) is electrically connected below the lower electrode plate (4), a plurality of substrates (7) located inside the growth cavity (5) are arranged above the lower electrode plate (4), and a radio frequency device (8) is electrically connected above the upper electrode plate (3); A branch pipe group (9) is installed on a first side of the outer wall of the tank body (2), each branch pipe of the branch pipe group (9) is provided with a mass flow meter (905), a second side of the outer wall of the tank body (2) is connected to a liquid nitrogen cold trap (10) via a pipeline, and a side of the liquid nitrogen cold trap (10) away from the tank body (2) is connected to a vacuum unit (11); The growth chamber (5) is used to store electric charges and to generate and excite plasma when a radio frequency electric field is applied.

2. The silicon-based fluorescent film production equipment according to claim 1, characterized in that: The radio frequency device (8) is composed of a radio frequency power supply (801) and a radio frequency matcher (802), wherein the radio frequency power supply (801) and the radio frequency matcher (802) are electrically connected, and the radio frequency power supply (801) and the upper electrode plate (3) are electrically connected.

3. The silicon-based fluorescent film production equipment according to claim 1, characterized in that: The heating structure comprises a heating plate (601) located below the lower electrode plate (4); a plurality of heating grooves (602) are provided on the surface of the heating plate (601); a heat-conducting copper plate (603) is sleeved inside the heating groove (602); and an electric heating network (604) is fixedly connected to the bottom surface of the heat-conducting copper plate (603).

4. The silicon-based fluorescent film production equipment according to claim 1, characterized in that: The substrate (7) is located at the grounded anode of the lower electrode plate (4), and the side of the substrate (7) facing the upper electrode plate (3) is a rough surface.

5. The silicon-based fluorescent film production equipment according to claim 1, characterized in that: The branch pipe group (9) comprises an air inlet pipe (901) connected to the tank body (2); the air inlet of the air inlet pipe (901) is connected to a spiral pipe (903); the air inlet of the spiral pipe (903) is connected to four precursor reaction gas branch pipes (902); and the circumferential side of the air inlet pipe (901) is connected to an L-shaped pipe (904).

6. The silicon-based fluorescent film production equipment according to claim 1, characterized in that: The vacuum unit (11) comprises a rotary vane mechanical pump (1111) and a mechanical booster pump (1112); the rotary vane mechanical pump (1111) is located between the mechanical booster pump (1112) and the liquid nitrogen cold trap (10); and the mechanical booster pump (1112) and the liquid nitrogen cold trap (10) are connected via a pipeline.

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