Semiconductor circuit for arithmetic processing and arithmetic processing method

Inactive Publication Date: 2005-04-14
OHMI +2
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since this method to carries out processing from a lower order digit, there is the disadvantage that it takes am extremely long time to acquire data of the most significant digit.
However, carrying out the conventional bit serial processing from the low order d

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor circuit for arithmetic processing and arithmetic processing method
  • Semiconductor circuit for arithmetic processing and arithmetic processing method
  • Semiconductor circuit for arithmetic processing and arithmetic processing method

Examples

Experimental program
Comparison scheme
Effect test

Example

[First Embodiment]

A first embodiment is an application of the present invention to a semiconductor circuit for arithmetic processing for adding data. In the first embodiment, a binary SD (signed digit) number system is used as a redundant base n number system. The binary SD number system is one redundant number system, and permits numbers of redundant value called “−1”, that were not available originally, for binary numbers comprised of combinations of “0's” and “1's”. An example of an arithmetic rule using this binary SD number system is shown in table 1. In the following description, for example, when data “010” is represented in the binary SD number system this data is shown as “010”SD, while when data “010” is being represented in the binary system the data is shown as “010”B. Also, data “2” being represented in the decimal system is shown as “2”D. TABLE 1A−101B−1−1 · 0−1 · 10 · 0  0 ·−10−1 · 1  0 · 00 · 1  0 ·−11 ·−11  0 · 0  0 · 11 · 0  1 ·−1

In table 1, the two characters ...

Example

[Second Embodiment]

In the second embodiment, the adder 1 and the adder 2 of the first embodiment are implemented as described in the following. Specifically, because of this two digit binary, comprising combinations of “0” and “1”, is used. According to two digit binary there are four combinations of “0” and “1”. In the second embodiment, “0” in the binary SD number system is expressed two ways in binary. Accordingly, “1”, “0” and “−1” in the binary SD number system is expressed as follows in binary. “−1” in binary SD . . . [11]B “0” in binary SD . . . [00]B, [10]B “1” in binary SD . . . [01]B.

Using binary SD “1”, “0” and “−1” expressed in this way means the adder 1 becomes as follows. For example, in the case of data a1 of “0” and data a2 of “−1”, data a1 being a value of [00]B and data a2 being a value of [11]B are input to the adder 1.

Inside the adder 1, if binary SD representation is used, the additional result is “−1”. In this case, In accordance with table 2, the value o...

Example

[Third Embodiment]

In the third embodiment, the adder 1 and the adder 2 of the first embodiment have the following structure.

Specifically, the adder shown in FIG. 4 is used as the adder 1. The adder 101 in FIG. 4 is comprised of neuron MOS inverters 101A-101C made using neuron MOS (Metal Oxide Silicon) transistors and inverters 101D-101F.

The neuron MOS inverters 101A-101C are sequentially connected.

The output of the neuron MOS inverter 101A is connected to the of the neuron MOS inverter 101C and to the inverter 101F, the output of the neuron MOS inverter 101B is connected to the of the neuron MOS inverter 101C and to the inverter 101E, and the output of the neuron MOS inverter 101C is connected to the inverter 101D.

Data a4 and data a5 comprising 2 bits correspond to the data a1 and data a2 in FIG. 1. A digit of a number in the redundant number system is represented by data a4 and data a5. Data a4 and data a5 can not be implements using an electrical signal being transmitted...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

There is provided a semiconductor circuit for arithmetic processing and an arithmetic processing method that can increase the rate of processing data and reduces the area of a circuit by suppressing wasteful processing.
There is provided a computing unit for computing input data, and this computing unit computes input digit data within a computation time unit and outputs a computation result representing a result obtained by the computation, and if a carry is generated in the computation a computation circuit (adders 1-3) for outputting carry data representing this carry, and delay means (memory 4) for delaying the computation result from the computation circuit by one computation time unit, are provided.

Description

TECHNICAL FIELD This invention relates to a semiconductor circuit for arithmetic processing and an arithmetic processing method, and particularly to a semiconductor circuit for arithmetic processing and an arithmetic processing method using information processing and device control. BACKGROUND ART In the field of information processing etc., semiconductor circuits are responsible for numerical computation and logical computation. Accordingly, semiconductor circuits are extremely important in the field of information processing etc., and various circuits are currently being designed. In semiconductor circuits, first of all information is divided into analog information and digital information, but it is necessary to perform arithmetic processing after converting all information to digital information in order to carry out computation maintaining high reliability. For this reason, it is a general rule in the present invention that analog information is converted to multi-value info...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F7/00G06F7/48G06F7/50G06F7/506
CPCG06F7/506G06F7/4824G06N3/063
InventorOHMI, TADAHIROIMAI, MAKOTONOZAWA, TOSHIYUKIFUJIBAYASHI, MASANORIKOTANI, KOJISHIBATA, TADASHINITTA, TAKAHISA
OwnerOHMI