Manufacturing method of large-power vertical light-emitting diode

Abstract

The invention provides a manufacturing method of a large-power vertical light-emitting diode, relating to the technical field of a semiconductor photoelectric device. The manufacturing method disclosed by the invention comprises the following steps of: 1) generating an epitaxial wafer on a sapphire substrate; 2) evaporating a reflection metal layer on a P-type GaN-based semiconductor layer; 3) forming a current stopping layer on an N-electrode area and forming a protection type passivation layer on the side wall of a groove; 4) forming an isolation groove; 5) filling photoresist I into the isolation groove; 6) depositing a diffusion impervious layer on the surface of the device, electrically plating a seeding layer, etching to expose the diffusion impervious layer, and coating thick photoresist II; 7) forming a metal supporting layer above the device; 8) stripping the sapphire substrate from the device and cleaning; 9) roughening the surface and evaporating an N-type electrode; 10) cutting the device to from core particles; and 11) grinding and polishing the surface of the sapphire substrate. According to the manufacturing method disclosed by the invention, the stability of an LED (Light-Emitting Diode) in a vertical structure can be improved and the yield of the finished core particles is improved.

Description

technical field

[0001] The invention relates to the technical field of manufacturing semiconductor optoelectronic devices, in particular to a method for manufacturing a GaN-based high-power vertical structure LED chip. Background technique

[0002] As a solid-state lighting source, GaN-based LEDs have the advantages of high photoelectric conversion efficiency, environmental protection, long life, and fast response. With the development and application of GaN-based high-brightness LEDs, a new generation of green and environmentally friendly solid-state lighting sources GaN-based LEDs has become the focus of attention. Since the sapphire substrate used for growth is non-conductive, traditional GaN-based LEDs use a planar electrode structure, with both p-type and n-type contact electrodes on the upper surface, and n-type electrodes are prepared by etching to n-type by photolithography-etching. Front-mount LEDs have a simple structure and are easy to process, but because the st...

Examples

Embodiment Construction

[0028] Method steps of the present invention are:

[0029] 1) see figure 1 , growing an N-type GaN-based semiconductor layer 302, a quantum well active region 303, and a P-type GaN-based semiconductor layer 304 sequentially on the sapphire substrate 301 by metal-organic chemical vapor deposition;

[0030] 2) see figure 2 , on the P-type GaN-based semiconductor layer 304, a reflective metal layer 305 is evaporated, with a thickness of Annealing at a high temperature for 10-30 minutes in a nitrogen environment, so that an ohmic contact is formed between the reflective metal layer 305 and the P-type GaN-based semiconductor layer 304, and the bonding force between the two is enhanced;

[0031] 3) see image 3 , using inductively coupled plasma ICP etching to form the mesa, using plasma enhanced chemical vapor deposition method PECVD to deposit a multi-layer dielectric film, and forming a current blocking layer 306 in the N electrode area by etching, which is used to uniforml...

technical field

[0001] The invention relates to the technical field of manufacturing semiconductor optoelectronic devices, in particular to a method for manufacturing a GaN-based high-power vertical structure LED chip. Background technique

[0002] As a solid-state lighting source, GaN-based LEDs have the advantages of high photoelectric conversion efficiency, environmental protection, long life, and fast response. With the development and application of GaN-based high-brightness LEDs, a new generation of green and environmentally friendly solid-state lighting sources GaN-based LEDs has become the focus of attention. Since the sapphire substrate used for growth is non-conductive, traditional GaN-based LEDs use a planar electrode structure, with both p-type and n-type contact electrodes on the upper surface, and n-type electrodes are prepared by etching to n-type by photolithography-etching. Front-mount LEDs have a simple structure and are easy to process, but because the st...

Examples

Embodiment Construction

[0028] Method steps of the present invention are:

[0029] 1) see figure 1 , growing an N-type GaN-based semiconductor layer 302, a quantum well active region 303, and a P-type GaN-based semiconductor layer 304 sequentially on the sapphire substrate 301 by metal-organic chemical vapor deposition;

[0030] 2) see figure 2 , on the P-type GaN-based semiconductor layer 304, a reflective metal layer 305 is evaporated, with a thickness of Annealing at a high temperature for 10-30 minutes in a nitrogen environment, so that an ohmic contact is formed between the reflective metal layer 305 and the P-type GaN-based semiconductor layer 304, and the bonding force between the two is enhanced;

[0031] 3) see image 3 , using inductively coupled plasma ICP etching to form the mesa, using plasma enhanced chemical vapor deposition method PECVD to deposit a multi-layer dielectric film, and forming a current blocking layer 306 in the N electrode area by etching, which is used to uniforml...

Images