Real-time feedback automatic assembling and manufacturing method for nano-electronic appliance

Abstract

The invention relates to the field of nano operation, in particular to a real-time feedback automatic assembling and manufacturing method for a nano-electronic appliance. According to the real-time feedback automatic assembling and manufacturing method, a closed-loop real-time detection assembling method is adopted, and driving signals with alternating current and direct current superposed are applied to microelectrodes through a signal generator, wherein alternating current signals serve as the driving signals, and direct current bias signals serve as detection signals; real-time feedback is achieved by scanning the jump of the direct current bias signals. A floating potential dielectrophoresis technique is adopted, and the problems that the effective assembling efficiency of the nano-electronic appliance is low and automatic and large-scale assembling is difficult to achieve are solved based on the closed-loop control concept; the real-time feedback automatic assembling and manufacturing method has the advantage that the physical and chemical features of nano conduits are not damaged; tiny changes of various kinds of force can be measured according to unique physical and chemical features of different nano materials.

Description

technical field

[0001] The invention relates to the field of nanometer operation, in particular to an automatic assembly and manufacturing method of nanometer electronic devices with real-time feedback. Background technique

[0002] Nanotechnology and nanodevices are one of the important development directions of today's high-tech. The breakthrough of nanotechnology and the application of nanodevices depend on the progress of nanofabrication technology. According to the December 2007 technical report (ITRS2007) of the International Technology Roadmap for Semiconductors (ITRS), by 2020, the half-pitch width of DRAM will be 14nm. With the continuous reduction of device size, it will be getting closer and closer to the limit of the existing electronic component architecture. The insurmountable problems encountered are not only the physical limit of electronic devices, but also precision automatic processing and power consumption. technical bottleneck. The traditional silicon...

Examples

Embodiment Construction

[0019] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0020] 1. Pretreatment of nanomaterials: put ZnO nanowires and alcohol mixed solution at a ratio of 1:1000 into a test tube, put the test tube into an ultrasonic oscillator at 30 degrees Celsius for 10-15 minutes, then take it out and stand still for 1 hour to obtain a uniform Translucent solution, obtain a large number of ZnO nanowire samples dispersed in the solution as a single;

[0021] 2. Automatic assembly process based on a closed-loop control system: Since the distance between the source and drain electrodes is about 1 μm, it is equivalent to a capacitor in the circuit. When the ZnO nanowire is not overlapped, the AC signal can be transmitted through the electrode, and the DC signal will be blocked. ; When the medium is lapped at both ends of the electrode, the electrode and the medium are equivalent to a resistance, and both AC and DC signals can be ...

technical field

[0001] The invention relates to the field of nanometer operation, in particular to an automatic assembly and manufacturing method of nanometer electronic devices with real-time feedback. Background technique

[0002] Nanotechnology and nanodevices are one of the important development directions of today's high-tech. The breakthrough of nanotechnology and the application of nanodevices depend on the progress of nanofabrication technology. According to the December 2007 technical report (ITRS2007) of the International Technology Roadmap for Semiconductors (ITRS), by 2020, the half-pitch width of DRAM will be 14nm. With the continuous reduction of device size, it will be getting closer and closer to the limit of the existing electronic component architecture. The insurmountable problems encountered are not only the physical limit of electronic devices, but also precision automatic processing and power consumption. technical bottleneck. The traditional silicon...

Examples

Embodiment Construction

[0019] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0020] 1. Pretreatment of nanomaterials: put ZnO nanowires and alcohol mixed solution at a ratio of 1:1000 into a test tube, put the test tube into an ultrasonic oscillator at 30 degrees Celsius for 10-15 minutes, then take it out and stand still for 1 hour to obtain a uniform Translucent solution, obtain a large number of ZnO nanowire samples dispersed in the solution as a single;

[0021] 2. Automatic assembly process based on a closed-loop control system: Since the distance between the source and drain electrodes is about 1 μm, it is equivalent to a capacitor in the circuit. When the ZnO nanowire is not overlapped, the AC signal can be transmitted through the electrode, and the DC signal will be blocked. ; When the medium is lapped at both ends of the electrode, the electrode and the medium are equivalent to a resistance, and both AC and DC signals can be ...

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