Organic electroluminescence device and preparation method thereof

Abstract

The invention discloses an organic electroluminescence device which comprises a glass substrate, a scattering layer, an anode, a hole injection layer, a hole transmission layer, a light emitting layer, an electron transfer layer, an electron injection layer and a cathode which are overlapped in sequence, wherein the scattering layer consists of a ternary doped layer and a metal material layer; the ternary doped layer comprises a copper compound material, a calcium compound material and a light emitting material; the copper compound material is selected from at least one of copper iodide, cuprous oxide, copper phthalocyanine and copper oxide; the calcium compound material is selected from at least one of calcium oxide, calcium chloride, calcium carbonate and calcium fluoride; the power function of the material of the metal material is minus 4.0-minus 5.5eV. The organic electroluminescence device disclosed by the invention is relatively high in light emission efficiency. The invention further provides a preparation method of the organic electroluminescence device.

Description

technical field

[0001] The invention relates to an organic electroluminescence device and a preparation method thereof. Background technique

[0002] The luminescence principle of organic electroluminescent devices is based on the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter, and holes are injected from the anode to the highest occupied molecular orbital (HOMO) of organic matter. Electrons and holes meet, recombine, and form excitons in the light-emitting layer. Excitons migrate under the action of an electric field, transfer energy to the light-emitting material, and excite electrons to transition from the ground state to the excited state. The excited state energy is deactivated by radiation to generate photons , releasing light energy.

[0003] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the res...

Examples

preparation example Construction

[0038] The preparation method of the organic electroluminescence device 100 of an embodiment, it comprises the following steps:

[0039] Step S110 , preparing the scattering layer 20 on the surface of the glass substrate 10 by electron beam evaporation.

[0040] The scattering layer 20 is formed on one side surface of the glass substrate 10 . The scattering layer 20 is composed of a ternary doped layer 201 and a metal material layer 202. The ternary doped layer 201 is prepared on the bottom surface of the glass substrate 10 by electron beam evaporation, and the ternary doped layer 201 includes a copper compound Material, calcium compound material and luminescent material, the copper compound material is selected from cuprous iodide (CuI), cuprous oxide (Cu 2 O), at least one of copper phthalocyanine (CuPc) and copper oxide (CuO), and the luminescent material is selected from 4-(dinitrile methyl)-2-butyl-6-(1,1,7,7 -Tetramethyljulodine-9-vinyl)-4H-pyran (DCJTB), 9,10-di-β-nap...

Embodiment 1

[0061] The structure prepared in this example is glass substrate / Cu 2 O:CaO:Alq 3 / Ag / ITO / MoO 3 / NPB / Alq 3 / TAZ / CsF / Ag organic electroluminescent device, in this embodiment and the following embodiments, " / " indicates a layer, and ":" indicates doping.

[0062] The glass substrate is N-LASF44. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night. The scattering layer is prepared on the glass substrate. The scattering layer is composed of a ternary doped layer and a metal material layer. The ternary doped layer is prepared on the surface of the glass substrate by electron beam evaporation, and the material is Cu. 2 O:CaO:Alq 3 , Cu 2 O, CaO and Alq 3 The mass ratio is 4:10:0.1, the thickness is 60nm, and the energy density of electron beam evaporation is 40W / cm 2 , on the surface of the ternary doped layer, a metal material layer is prepared by thermal resistance evaporation, the material is Ag, and the thickness is 70nm...

Embodiment 2

[0070] The structure prepared in this example is glass substrate / CuI:CaCl 2 :DCJTB / Al / IZO / MoO 3 / TCTA / ADN / Bphen / Cs 2 CO 3 / Au organic electroluminescent devices.

[0071] The glass substrate is N-LAF36. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night to prepare a scattering layer on the glass substrate. The scattering layer is composed of a ternary doped layer and a metal material layer. The ternary doped layer is prepared by electron beam evaporation on the surface of the glass substrate, and the material is CuI:CaCl 2 : DCJTB, CuI, CaCl 2 The mass ratio to DCJTB is 2:3:0.1, the thickness is 100nm, and the energy density of electron beam evaporation is 10W / cm 2 , on the surface of the ternary doped layer, the metal material layer is prepared by thermal resistance evaporation, the material is Al, and the thickness is 150nm. Then IZO is prepared on the scattering layer with a thickness of 80nm, which is prepared by ...

technical field

[0001] The invention relates to an organic electroluminescence device and a preparation method thereof. Background technique

[0002] The luminescence principle of organic electroluminescent devices is based on the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter, and holes are injected from the anode to the highest occupied molecular orbital (HOMO) of organic matter. Electrons and holes meet, recombine, and form excitons in the light-emitting layer. Excitons migrate under the action of an electric field, transfer energy to the light-emitting material, and excite electrons to transition from the ground state to the excited state. The excited state energy is deactivated by radiation to generate photons , releasing light energy.

[0003] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the res...

Examples

preparation example Construction

[0038] The preparation method of the organic electroluminescence device 100 of an embodiment, it comprises the following steps:

[0039] Step S110 , preparing the scattering layer 20 on the surface of the glass substrate 10 by electron beam evaporation.

[0040] The scattering layer 20 is formed on one side surface of the glass substrate 10 . The scattering layer 20 is composed of a ternary doped layer 201 and a metal material layer 202. The ternary doped layer 201 is prepared on the bottom surface of the glass substrate 10 by electron beam evaporation, and the ternary doped layer 201 includes a copper compound Material, calcium compound material and luminescent material, the copper compound material is selected from cuprous iodide (CuI), cuprous oxide (Cu 2 O), at least one of copper phthalocyanine (CuPc) and copper oxide (CuO), and the luminescent material is selected from 4-(dinitrile methyl)-2-butyl-6-(1,1,7,7 -Tetramethyljulodine-9-vinyl)-4H-pyran (DCJTB), 9,10-di-β-nap...

Embodiment 1

[0061] The structure prepared in this example is glass substrate / Cu 2 O:CaO:Alq 3 / Ag / ITO / MoO 3 / NPB / Alq 3 / TAZ / CsF / Ag organic electroluminescent device, in this embodiment and the following embodiments, " / " indicates a layer, and ":" indicates doping.

[0062] The glass substrate is N-LASF44. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night. The scattering layer is prepared on the glass substrate. The scattering layer is composed of a ternary doped layer and a metal material layer. The ternary doped layer is prepared on the surface of the glass substrate by electron beam evaporation, and the material is Cu. 2 O:CaO:Alq 3 , Cu 2 O, CaO and Alq 3 The mass ratio is 4:10:0.1, the thickness is 60nm, and the energy density of electron beam evaporation is 40W / cm 2 , on the surface of the ternary doped layer, a metal material layer is prepared by thermal resistance evaporation, the material is Ag, and the thickness is 70nm...

Embodiment 2

[0070] The structure prepared in this example is glass substrate / CuI:CaCl 2 :DCJTB / Al / IZO / MoO 3 / TCTA / ADN / Bphen / Cs 2 CO 3 / Au organic electroluminescent devices.

[0071] The glass substrate is N-LAF36. After rinsing the glass substrate with distilled water and ethanol, soak it in isopropanol for one night to prepare a scattering layer on the glass substrate. The scattering layer is composed of a ternary doped layer and a metal material layer. The ternary doped layer is prepared by electron beam evaporation on the surface of the glass substrate, and the material is CuI:CaCl 2 : DCJTB, CuI, CaCl 2 The mass ratio to DCJTB is 2:3:0.1, the thickness is 100nm, and the energy density of electron beam evaporation is 10W / cm 2 , on the surface of the ternary doped layer, the metal material layer is prepared by thermal resistance evaporation, the material is Al, and the thickness is 150nm. Then IZO is prepared on the scattering layer with a thickness of 80nm, which is prepared by ...

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