Substrate treatment method

Abstract

A substrate processing method is disclosed. In the substrate processing method, a cleaning process is performed at a first temperature to remove a portion of an accumulation layer deposited in a chamber by a deposition process (step 1). A deposition process is performed on a plurality of substrates located in the chamber at the first temperature (step 2). Steps 1 and 2 are performed alternately and repeatedly.

Description

[0001] This application claims the priority of Korean Patent Application No. 10-2018-0133556 filed on November 2, 2018, in the Korean Intellectual Property Office (KIPO), the contents of which are incorporated herein by reference in their entirety. Technical Field

[0002] Example embodiments relate to a plasma deposition method and a plasma deposition apparatus, and more particularly, to a substrate processing method and a substrate processing apparatus for cleaning a deposition apparatus used in manufacturing a semiconductor device. Background Art

[0003] In a deposition apparatus for manufacturing semiconductor devices, layers may be deposited on a substrate such as a wafer, and may be deposited on internal components within a chamber. Since the deposition process is repeatedly performed within the chamber, the thickness of the accumulated layer deposited within the chamber increases, and particles may appear. Therefore, a cleaning process may be required to remove the accumulated layer. However, conventional cleaning processes may damage the internal components within the chamber, and since conventional cleaning processes may be performed at a relatively low temperature compared to the temperature in the deposition process, the deposition apparatus may generally need to be stopped for the cleaning process, thereby reducing productivity. Summary of the invention

[0004] Example embodiments provide a substrate processing method capable of preventing internal components of a chamber from being damaged and capable of improving productivity.

[0005] According to an example embodiment, in a substrate processing method, a cleaning process is performed at a first temperature to remove a portion of an accumulation layer deposited in a chamber by a deposition process (step 1). Deposition processes are performed on a plurality of substrates in the chamber at the first temperature, respectively (step 2). Steps 1 and 2 are performed alternately and repeatedly.

[0006] According to an example embodiment, in a substrate processing method, a deposition process is performed on a plurality of substrates in a chamber at a first temperature, respectively, so that an accumulation layer having a first thickness is deposited in the chamber (step 1). A local cleaning process is performed on the accumulation layer, so that the accumulation layer has a second thickness less than the first thickness (step 2). A deposition process is performed on a plurality of substrates in a chamber at a first temperature, respectively, so that an accumulation layer having the first thickness is deposited in the chamber (step 3). Steps 2 and 3 are performed alternately and repeatedly.

[0007] According to example embodiments, in a substrate processing method, a deposition process is performed on a plurality of substrates in a chamber, respectively, a cleaning process is performed to remove a portion of an accumulation layer deposited in the chamber by the deposition process, and the deposition process is repeatedly performed in the chamber.

[0008] According to example embodiments, in a substrate processing method, a local cleaning process for removing a portion of an accumulation layer deposited in a chamber by a deposition process may be performed in situ together with the deposition process at the same temperature as in the deposition process. When the local cleaning process is performed, a flow direction of the cleaning gas and a distance between the substrate stage and the showerhead may be adjusted. After the cleaning process is performed, a buffer layer may be formed on the residual accumulation layer in the chamber.

[0009] Therefore, the local cleaning process can be performed in situ with the deposition process at the same temperature as the deposition process, thereby improving process productivity. In addition, the flow direction of the cleaning gas supplied to the chamber can be adjusted to provide a uniform concentration distribution, and the distance between the substrate stage and the showerhead can be adjusted to provide a uniform temperature distribution in the chamber, so that the accumulated layer remaining in the chamber is maintained to have a uniform thickness. Therefore, the maintenance time of the deposition equipment can be shortened, the thickness distribution of the layer deposited on the wafer can be improved, and damage to the internal components in the chamber due to the cleaning process can be prevented.

[0010] In addition, the buffer layer can soften the surface of the accumulation layer partially removed by the local cleaning process so that the accumulation layer has uniform emissivity. Therefore, the deposition process to be performed after the local cleaning process can have the same process conditions as those of the deposition process before the local cleaning process. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Example embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings. Figures 1 to 11 Representative non-limiting example embodiments are described herein.

[0012] Figure 1 is a block diagram illustrating a substrate processing apparatus according to example embodiments.

[0013] Figure 2 The substrate table is shown lowered Figure 1 Block diagram of the substrate processing equipment in FIG.

[0014] Figure 3 is a flowchart illustrating a substrate processing method according to example embodiments.

[0015] Figure 4 It is shown Figure 3 Timing diagram of the substrate processing method in .

[0016] Figure 5 It is shown in Figure 3 A timing diagram of a local cleaning process performed in-situ together with a deposition process in a substrate processing method in FIG.

[0017] FIG. 6A to FIG. 6E is shown in which the Figure 3A cross-sectional view of an accumulation layer deposited within a chamber of a substrate processing method in FIG.

[0018] Figures 7 to 11 is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to example embodiments. DETAILED DESCRIPTION

[0019] Hereinafter, example embodiments will be explained in detail with reference to the accompanying drawings.

[0020] Figure 1 is a block diagram of a substrate processing apparatus according to example embodiments. Figure 2 The substrate table is shown lowered Figure 1 Block diagram of the substrate processing equipment in FIG.

[0021] Reference Figure 1 and Figure 2 The substrate processing apparatus 100 may include a chamber 110, a substrate heater assembly, a gas distribution assembly, and a gas source. The substrate processing apparatus 100 may further include an exhaust unit and the like.

[0022] In an example embodiment, the substrate processing device 100 may be a deposition device configured to form a layer on a substrate such as a semiconductor wafer W. For example, the substrate processing device 100 may be a chemical vapor deposition (CVD) device or an atomic layer deposition (ALD) device configured to form a metal nitride layer such as a titanium nitride (TiN) layer on a substrate. However, it is not limited thereto, and for example, the substrate processing device 100 may be an etching device. Here, the substrate includes a semiconductor substrate, a glass substrate, etc.

[0023] The chamber 110 may include a processing container having a cylindrical shape. The chamber 110 may include aluminum, stainless steel, etc. A door (not shown) for loading / unloading of the round wafer W may be provided in a side wall of the chamber 110. The round wafer W may be loaded / unloaded onto / from the substrate heater of the substrate stage 120 through the door.

[0024] The exhaust unit may be connected to an exhaust port 114 installed in the bottom of the chamber 110 through an exhaust line. The exhaust unit may include a vacuum pump such as a turbomolecular pump to control the pressure within the chamber 110 so that the processing space inside the chamber 110 can be depressurized to a desired vacuum degree. In addition, process byproducts and residual process gases may be exhausted from the chamber 110 through the exhaust port 114. Alternatively, the exhaust port 114 may be installed in a sidewall of the chamber 110.

[0025] The substrate heater assembly may include a substrate stage 120 disposed within the chamber 110 to support a substrate. The substrate stage 120 may include a heater 122 configured to heat the substrate to a desired temperature. For example, the heater 122 may include a resistive coil. The substrate stage 120 may include an insulating material such as aluminum oxide, aluminum nitride, etc. The heater 122 may be heated to a temperature range of about 400° C. to about 700° C. The coils may be arranged concentrically. In addition, a heater (not shown) may be installed in a sidewall of the chamber 110 to control the temperature of the chamber 110 during a layer deposition process and a cleaning process. For example, the temperature of the chamber 110 may be maintained at about 400° C. to about 600° C.

[0026] In addition, the substrate stage 120 may further include an electrostatic electrode configured to hold the wafer W thereon using an electrostatic force.

[0027] In example embodiments, the substrate heater assembly may include an elevating mechanism configured to elevate the substrate stage 120. The elevating mechanism may include a driving motor 130 for elevating a support shaft 124 connected to the substrate stage 120. The driving motor 130 may elevate the support shaft 124 through gear transmission.

[0028] The lifting mechanism may include a bellows 132 attached between the end of the support shaft 124 and the bottom of the chamber 110. The bellows 132 may allow free vertical movement of the support shaft 124 and may create an airtight seal between the chamber 110 and the outside world.

[0029] In example embodiments, the gas distribution assembly may include a gas distribution block 112 installed in an upper portion of the chamber 110 and a showerhead 140 as an upper gas injection nozzle installed on a lower surface of the gas distribution block 112. In addition, the gas distribution assembly may include at least one lower gas injection nozzle 144.

[0030] The shower head 140 may be installed above the substrate stage 120 to face the substrate stage 120. The shower head 140 may supply gas from above the substrate stage 120. The lower gas injection nozzle 144 may be installed below the substrate stage 120. The lower gas injection nozzle 144 may supply gas from below the substrate stage 120.

[0031] The shower head 140 may have a plurality of injection holes 142 extending to a lower surface of the shower head 140. A first gas channel 113a and a second gas channel 113b may be formed in the gas distribution seat 112 to be connected to a distribution space of the shower head 140.

[0032] The showerhead 140 may supply source gas and reaction gas as a film source gas, a first cleaning gas, and a carrier gas into the chamber 110 from above the substrate stage 120 through the injection hole 142. The lower gas injection nozzle 144 may supply a second cleaning gas and a carrier gas into the chamber 110 from below the substrate stage 120.

[0033] In example embodiments, the gas source may include a gas supply source 150 and gas supply lines 152a, 152b, 154 connected to the gas supply source to supply gas from the gas supply source 150 to the chamber 110. The first gas supply line 152a may be connected to the first gas channel 113a, and the second gas supply line 152b may be connected to the second gas channel 113b.

[0034] The gas supply source 150 may include a source gas supply source for supplying a source gas, a reaction gas supply source for supplying a reaction gas, a cleaning gas supply source for supplying a first cleaning gas and a second cleaning gas, and a carrier gas supply source for supplying a carrier gas.

[0035] For example, a source gas from a source gas supply source may be introduced into the showerhead 140 through a first gas supply line 152a. A reaction gas from a reaction gas supply source may be introduced into the showerhead 140 through a second gas supply line 152b. A first cleaning gas from a cleaning gas supply source may be introduced into the showerhead 140 through a first gas supply line 152a and a second gas supply line 152b. A carrier gas from a carrier gas supply source may be introduced into the showerhead 140 through a first gas supply line 152a and a second gas supply line 152b. A second cleaning gas from a cleaning gas supply source may be introduced into the lower gas injection nozzle 144 through a third gas supply line 154.

[0036] The source gas may include titanium chloride (TiCl 4 ) gas. The reaction gas may include ammonia (NH 3 ) gas, hydrogen (H 2 ) gas, etc. The first cleaning gas and the second cleaning gas may include chlorine fluoride (ClF 3 ) gas. The carrier gas may include nitrogen (N 2 ) gas, argon (Ar) gas, etc.

[0037] The controller 160 can monitor the output from the substrate processing device 100 and control the operation of the substrate processing device 100. The controller can include a microcomputer and various interface circuits. The controller 160 can be connected to the heater 122, the drive motor 130, the exhaust unit, etc., and can transfer information between them. The program stored in the memory can be used to control the components of the substrate processing device 100 based on the stored recipe information.

[0038] In example embodiments, the substrate processing apparatus 100 may sequentially perform a deposition process on a plurality of wafers W on a substrate stage 120 within a chamber 110 .

[0039] During the deposition process, the chamber 110 may be maintained at a temperature of about 550° C. The source gas from the source gas supply source may be introduced into the shower head 140 through the first gas supply line 152a and the first gas channel 113a, and the shower head 140 may inject the source gas onto the wafer W on the substrate stage 120. Then, the reaction gas from the reaction gas supply source may be introduced into the shower head 140 through the second gas supply line 152b and the second gas channel 113b, and the shower head 140 may inject the reaction gas onto the wafer W on the substrate stage 120. Thus, a titanium nitride (TiN) layer may be formed on the wafer W. For example, the deposition process may be sequentially performed on 200 to 2000 wafers W. Here, reaction products such as a titanium nitride (TiN) layer may be deposited on internal components such as the chamber sidewall, the substrate stage, the shower head, etc., located within the chamber 110.

[0040] In example embodiments, the substrate processing apparatus 100 may perform a cleaning process to remove an accumulation layer deposited within the chamber 110 after performing a deposition process. The cleaning process may include a local cleaning process for removing a portion of the accumulation layer and a full cleaning process for removing all remaining portions of the accumulation layer.

[0041] In the cleaning process, the chamber 110 may be maintained at a temperature of about 550° C. In the local cleaning process, an intensity distribution of the cleaning gas supplied into the chamber 110 may be adjusted so that a residual portion of the accumulation layer after the local cleaning process has a uniform thickness.

[0042] Specifically, the first cleaning gas from the cleaning gas supply source can be introduced into the showerhead 140 through the first gas supply line 152a and the first gas channel 113a, and the showerhead 140 can inject the first cleaning gas into the chamber 110 from above the substrate stage 120. The first cleaning gas from the cleaning gas supply source can be introduced into the showerhead 140 through the second gas supply line 152b and the second gas channel 113b, and the showerhead can inject the first cleaning gas into the chamber 110 from above the substrate stage 120.

[0043] The first cleaning gas may be introduced into the showerhead 140 through the first gas supply line 152a and the first gas supply path of the first gas channel 113a and / or the second gas supply line 152b and the second gas supply path of the second gas channel 113b, and then injected into the chamber 110. Here, the first cleaning gas may be introduced into the showerhead 140 through any one of the first gas path and the second gas path or may be introduced into the showerhead 140 through both the first gas path and the second gas path.

[0044] The second cleaning gas from the cleaning gas supply source may be introduced into the lower gas injection nozzle 144 through the third gas supply line 154, and the lower gas injection nozzle 144 may inject the second cleaning gas into the chamber 110 from below the substrate stage 120. The flow rate of the first cleaning gas may be the same as or different from the flow rate of the second cleaning gas.

[0045] For example, the flow rate of the second cleaning gas may be greater than the flow rate of the first cleaning gas. Therefore, at least a portion of the accumulation layer (TiN layer) deposited in the chamber 110 may be uniformly removed.

[0046] Furthermore, during the partial cleaning process, the distance between the substrate stage and the showerhead 140 may be adjusted to provide a uniform temperature distribution within the chamber 110. Therefore, the thickness of the remaining portion of the accumulation layer after the partial cleaning process is uniform.

[0047] For example, Figure 1 As shown in FIG. 1 , when the distance between the substrate stage 120 and the shower head 140 is maintained at the first gap G1 , the cleaning process may be performed. The lifting mechanism may raise the support shaft 124 to maintain the first gap G1 between the substrate stage 120 and the shower head 140 .

[0048] like Figure 2 As shown in FIG. 1 , when the distance between the substrate stage 120 and the shower head 140 is maintained at a second gap G2 greater than the first gap G1, a cleaning process may be performed. The lifting mechanism may lower the support shaft 124 to maintain the second gap G2 between the substrate stage 120 and the shower head 140 .

[0049] In example embodiments, after performing the local cleaning process, the substrate processing apparatus 100 may perform a pre-coating process for forming a buffer layer on the surface of the residual accumulation layer. The pre-coating process may be performed similarly to the deposition process.

[0050] In the pre-coating process, the chamber 110 may be maintained at a temperature of about 550° C. The source gas from the source gas supply source may be introduced to the showerhead 140 through the first gas supply line 152a and the first gas channel 113a, and the showerhead 140 may inject the source gas into the chamber 110. Then, the reaction gas from the reaction gas supply source may be introduced to the showerhead 140 through the second gas supply line 152b and the second gas channel 113b, and the showerhead 140 may inject the reaction gas onto the wafer W on the substrate stage 120. Therefore, a buffer layer may be formed on the residual accumulation layer within the chamber 110. The buffer layer may include the same material as the accumulation layer (i.e., titanium nitride (TiN)).

[0051] The buffer layer may soften the surface of the accumulation layer partially removed by the local cleaning process so that the accumulation layer has uniform emissivity. Therefore, a deposition process to be performed after the local cleaning process may have the same process conditions as those of the deposition process before the local cleaning process.

[0052] In the following, we will use Figure 1 A method for processing a substrate using a substrate processing device is explained.

[0053] Figure 3 is a flowchart illustrating a substrate processing method according to example embodiments. Figure 4 It is shown Figure 3 Timing diagram of the substrate processing method in . Figure 5 It is shown in Figure 3 A timing diagram of a local cleaning process performed in-situ together with a deposition process in a substrate processing method in FIG. FIG. 6A to FIG. 6E is shown in which the Figure 3 A cross-sectional view of an accumulation layer deposited in a chamber of a substrate processing method in FIG. The substrate processing method may be applied to forming a layer on a wafer in a chemical vapor deposition chamber and cleaning the interior of the chamber, however, it may not be limited thereto.

[0054] Reference Figures 1 to 6E First, a deposition process P1 ( S100 ) for depositing a layer on a substrate such as a wafer W (hereinafter referred to as “substrate W”) may be repeatedly performed within the chamber 110 .

[0055] In an example embodiment, the chamber 110 may be a chamber for a CVD process. For example, the substrate W may be made of a semiconductor wafer such as a silicon wafer or a germanium wafer. The substrate W may include various structures (not shown) thereon.

[0056] A deposition process may be performed to form a metal layer on the substrate W. For example, the metal layer includes a metal having low resistance such as titanium, tungsten, tantalum, platinum, etc., or includes a metal nitride such as titanium nitride, tantalum nitride, etc.

[0057] In example embodiments, source gas and reaction gas as thin film source gas may be supplied to the substrate W on the substrate stage 120 within the chamber 110 through the shower head 140. The chamber 110 may be maintained at a temperature of about 550°C during the deposition process.

[0058] Specifically, the source gas from the gas supply source 150 may be introduced into the showerhead 140 through the first gas supply line 152a and the first gas channel 113a. The reaction gas from the reaction gas supply source may be introduced into the showerhead 140 through the second gas supply line 152b and the second gas channel 113b. The source gas may include titanium chloride (TiCl 4 ) gas. The reaction gas may include ammonia (NH 3 ) gas, hydrogen (H 2 ) gas, etc. Therefore, a titanium nitride (TiN) layer can be formed on the substrate W.

[0059] For example, the deposition process P1 may be repeatedly performed on 200 to 2000 substrates W. Here, a reaction product such as a titanium nitride (TiN) layer may be deposited on internal components such as a chamber sidewall, a substrate stage, a showerhead, etc. within the chamber 110 .

[0060] like Fig. 6A As shown in FIG. 1 , the accumulation layer 200 deposited on the surface of the shower head 140 in the chamber 110 by the deposition process P1 may have a first thickness T1. The first thickness T1 may be the thickness of the accumulation layer deposited in the chamber 110 when the deposition process P1 has been performed 1500 times. For example, the first thickness T1 may be about 1200 μm.

[0061] Then, after the deposition process P1 is completed, a partial cleaning process P2 may be performed on the accumulation layer 200 within the chamber 110 ( S110 ).

[0062] In example embodiments, the first cleaning gas may be supplied into the chamber 110 from above the substrate stage 120 through the showerhead 140. The second cleaning gas may be supplied into the chamber 110 from below the substrate stage 120 through the lower gas injection nozzle 144. In the local cleaning process, the chamber 110 may be maintained at the same temperature as that in the deposition process, for example, about 550°C.

[0063] Specifically, the first cleaning gas from the cleaning gas supply source may be introduced into the showerhead 140 through the first gas supply line 152a and the first gas channel 113a. The first cleaning gas from the cleaning gas supply source may be introduced into the showerhead 140 through the second gas supply line 152b and the second gas channel 113b. The second cleaning gas from the cleaning gas supply source may be introduced into the lower gas injection nozzle 144 through the third gas supply line 154. The first cleaning gas and the second cleaning gas may include chlorine fluoride (ClF 3 ) gas. The flow rate of the first cleaning gas may be the same as or different from the flow rate of the second cleaning gas. For example, the flow rate of the second cleaning gas may be greater than the flow rate of the first cleaning gas. In this way, a portion of the accumulation layer deposited in the chamber 110 may be removed.

[0064] like Figure 6B As shown in , the residual accumulation layer 202 after performing the local cleaning process P2 may have a second thickness T2. The second thickness may be the thickness of the accumulation layer 202 remaining in the chamber 110 after the local cleaning process P2 has been performed. For example, the thickness of the accumulation layer 200 removed by the local cleaning process P2 may be the thickness of the accumulation layer deposited in the chamber 110 when the deposition process P1 has been performed 200 times. For example, the second thickness T2 may be about 1.6 μm.

[0065] In an example embodiment, if Figure 6C As shown in FIG. 2 , after the local cleaning process P2 is performed, a pre-coating process may be performed on the surface of the residual accumulation layer 202 to form a buffer layer 210. The pre-coating process may be performed similarly to the deposition process.

[0066] In the pre-coating process, the chamber 110 may be maintained at a temperature of about 550° C. A source gas from a source gas supply source may be introduced to the showerhead 140 through the first gas supply line 152a and the first gas channel 113a, and the showerhead 140 may inject the source gas into the chamber 110. Then, a reaction gas from a reaction gas supply source may be introduced to the showerhead 140 through the second gas supply line 152b and the second gas channel 113b, and the showerhead 140 may inject the reaction gas onto the wafer W on the substrate stage 120. Therefore, a buffer layer 210 may be formed on the residual accumulation layer 202 on the showerhead 140. The buffer layer 210 may include titanium nitride (TiN).

[0067] Then, the deposition process P3 may be repeatedly performed on a plurality of substrates W ( S120 ).

[0068] For example, the deposition process P3 may be repeatedly performed on 200 substrates W. Here, a reaction product such as a titanium nitride (TiN) layer may be deposited on internal components such as a chamber sidewall, a substrate stage, a showerhead, etc., located within the chamber 110 .

[0069] like Fig.6D As shown in FIG. 1 , the accumulation layers 202 , 210 , 204 deposited on the surface of the showerhead 140 located in the chamber 110 by the deposition process P3 may have a first thickness T1 . For example, the first thickness T1 may be about 1200 μm.

[0070] Then, the partial cleaning process P2 and the deposition process P3 may be alternately and repeatedly performed ( S130 ).

[0071] like Fig. 6E As shown in , the residual accumulation layer 202 after performing the local cleaning process P2 may have a second thickness T2. The second thickness T2 may be the thickness of the accumulation layer 202 remaining in the chamber 110 after the local cleaning process P2 has been performed. For example, the thickness of the accumulation layer removed by the local cleaning process P2 may be the thickness of the accumulation layer deposited in the chamber 110 when the deposition process P3 has been performed 200 times. For example, the second thickness T2 may be about 1.6 μm.

[0072] Then, a full cleaning process may be performed to completely remove the accumulation layer within the chamber 110 ( S140 ).

[0073] like Figure 5 As shown in , the local cleaning process P2 may include a plurality of steps. For example, in an example embodiment, the local cleaning process P2 may include a total of six steps.

[0074] For example, in step 1, the distance between the substrate stage 120 and the shower head 140 may be maintained at the first gap G1, and the first cleaning gas may be injected into the chamber 110 from above the substrate stage 120. The first cleaning gas from the cleaning gas supply source may be introduced into the shower head 140 through the first gas supply line 152a and the first gas supply channel 113a, and the shower head 140 may inject the first cleaning gas into the chamber 110 from above the substrate stage 120.

[0075] In step 2, the distance between the substrate stage 120 and the nozzle 140 can be maintained at the first gap G1, and the first cleaning gas from the cleaning gas supply source can be introduced into the nozzle 140 through the second gas supply line 152b and the second gas channel 113b. The nozzle 140 can inject the first cleaning gas into the chamber 110 from above the substrate stage 120.

[0076] like Figure 5As shown in FIG. 1 , in step 3, the distance between the substrate stage 120 and the nozzle 140 can be maintained at a second gap G2 greater than the first gap G1, and the first cleaning gas from the cleaning gas supply source can be introduced into the nozzle 140 through the first gas supply line 152 a and the first gas supply channel 113 a, and the nozzle 140 can inject the first cleaning gas into the chamber 110 from above the substrate stage 120.

[0077] In step 4, the distance between the substrate stage 120 and the nozzle 140 can be maintained at a second gap G2 greater than the first gap G1, and the first cleaning gas from the cleaning gas supply source can be introduced into the nozzle 140 through the second gas supply line 152b and the second gas channel 113b. The nozzle 140 can inject the first cleaning gas into the chamber 110 from above the substrate stage 120.

[0078] In step 5, the distance between the substrate stage 120 and the showerhead 140 may be maintained at a third gap G3 that may be greater than the first gap G1 and less than the second gap G2, and the second cleaning gas from the cleaning gas supply source may be introduced into the lower gas injection nozzle 144 through the third gas supply line 154, and the lower gas injection nozzle 144 may inject the second cleaning gas into the chamber 110 from below the substrate stage 120.

[0079] In step 6, the distance between the substrate stage 120 and the showerhead 140 may be maintained at a fourth gap G4 smaller than the third gap G3, and the second cleaning gas from the cleaning gas supply source may be introduced into the lower gas injection nozzle 144 through the third gas supply line 154, and the lower gas injection nozzle 144 may inject the second cleaning gas from below the substrate stage 120 into the chamber 110. Here, the fourth gap G4 may be equal to the first gap G1; however, the present invention is not limited thereto.

[0080] As described above, in the substrate processing method, a local cleaning process for removing a portion of the accumulation layer deposited in the chamber 110 due to the deposition process can be performed in situ together with the deposition process at the same temperature as the temperature in the deposition process. When the local cleaning process is performed, the flow direction of the cleaning gas and the distance between the substrate stage and the showerhead can be adjusted. After the local cleaning process is performed, a buffer layer can be formed on the accumulation layer located in the chamber.

[0081] Therefore, a local cleaning process can be performed in situ together with the deposition process at the same temperature as that in the deposition process, thereby improving process productivity. In addition, the flow direction of the cleaning gas supplied to the chamber can be adjusted to have a uniform concentration distribution, and the distance between the substrate stage and the showerhead can be adjusted to provide a uniform temperature distribution in the chamber, so that the accumulated layer remaining in the chamber is maintained to have a uniform thickness. Therefore, the maintenance time of the deposition equipment can be shortened, the thickness distribution between the layers deposited on the wafer can be improved, and damage to the internal components located in the chamber due to the cleaning process can be prevented.

[0082] In addition, the buffer layer can soften the surface of the accumulation layer partially removed by the local cleaning process so that the accumulation layer has uniform emissivity. Therefore, the deposition process to be performed after the local cleaning process can have the same process conditions as those of the deposition process before the local cleaning process.

[0083] Hereinafter, a method of manufacturing a semiconductor device using a substrate processing method will be explained.

[0084] Figures 7 to 11 is a cross-sectional view showing a method of manufacturing a semiconductor device according to an example embodiment. For example, Figures 7 to 11 A method of manufacturing a nonvolatile semiconductor device having a three-dimensional structure or a vertical type memory device including a vertical channel may be illustrated.

[0085] exist Figures 7 to 11 In the embodiment, a direction extending vertically from the upper surface of the substrate can be defined as a first direction. In addition, two directions parallel to the upper surface of the substrate and intersecting each other can be defined as a second direction and a third direction, respectively. For example, the second direction and the third direction can intersect each other vertically.

[0086] Reference Figure 7 , a vertical channel structure may be formed in a channel hole formed in a molding structure including a first insulating layer 310 and a sacrificial layer 320 alternately and repeatedly stacked on a substrate 300 .

[0087] In example embodiments, the first insulating layer 310 may include silicon oxide. The sacrificial layer 320 may include a material that may have an etch selectivity with respect to the first insulating layer 310, for example, silicon nitride.

[0088] The channel hole may penetrate through the first insulating layer 310 and the sacrificial layer 320 to expose the top surface of the wafer substrate 300. A semiconductor pattern 360 and a vertical channel structure are sequentially formed in the channel hole along a first direction. The vertical channel structure may include a first blocking layer pattern 372, a charge trapping layer pattern 382, ​​a tunnel insulating layer pattern 392, a channel 442, and a second insulating layer pattern 460 sequentially formed in the channel hole along a second direction.

[0089] Reference Figure 8 A first opening 480 may be formed through the first insulating layer 310 and the sacrificial layer 320 to expose the top surface of the wafer substrate 300 , and then a gap 490 may be formed between the first insulating layer patterns 315 to expose the outer sidewalls of the first barrier layer patterns 372 .

[0090] Reference Fig. 9 A second barrier layer 500 can be formed on the exposed portion of the outer side wall of the first barrier layer pattern 372, the exposed portion of the side wall of the semiconductor pattern 360, the inner wall of the gap 490, the surface of the first insulation layer pattern 315, the exposed top surface of the substrate 300, the top surface of the pad (or "pad") 470, and the top surface of the separation layer pattern 330, and then a gate electrode layer 540 can be formed on the second barrier layer 500 to completely fill the remaining portion of the gap 490.

[0091] In example embodiments, the second barrier layer 500 may be formed to include, for example, a metal oxide, such as aluminum oxide, hafnium oxide, lanthanum oxide, lanthanum aluminum oxide, lanthanum hafnium oxide, hafnium aluminum oxide, titanium oxide, tantalum oxide, and / or zirconium oxide.

[0092] In an example embodiment, reference may be used Figures 1 to 11 The described substrate processing apparatus and substrate processing method may form the gate electrode layer 540. The gate electrode layer 540 may be formed by a deposition process of the substrate processing method.

[0093] like Figure 1 As shown in FIG. 1 , after the wafer substrate 300 is loaded onto the substrate stage 120 of the substrate processing apparatus 100, source gas and reaction gas may be supplied to the wafer substrate 300 through the shower head 140 to form the gate electrode layer 540. The source gas may include titanium chloride (TiCl 4 ) gas. The reaction gas may include ammonia (NH 3 ) gas, hydrogen (H 2 ) gas, etc. The gate electrode layer 540 may include a metal such as titanium or a metal nitride such as titanium nitride.

[0094] Reference Fig.10, the gate electrode layer 540 may be partially removed to form gate electrodes 542, 544, and 546 in the gap 490. In example embodiments, the gate electrode layer 540 may be partially removed by a wet etching process.

[0095] Reference Fig.11 , a third insulation layer pattern 580 filling the first opening 480 may be formed. In example embodiments, after the third insulation layer pattern 580 filling the first opening 480 is formed on the substrate 300 and the uppermost first insulation layer pattern 315, the third insulation layer may be planarized until a top surface of the uppermost first insulation layer pattern 315 may be exposed to form the third insulation layer pattern 580.

[0096] Then, a fifth insulating layer 590 may be formed on the first insulating layer pattern 315, the third insulating layer pattern 380, the pad 470, and the separation layer pattern 330, and a second opening 605 may be formed to expose a top surface of the pad 470. In example embodiments, a plurality of second openings 605 corresponding to the pad 470 may be formed to define a second opening array.

[0097] Then, a bit line contact 600 may be formed on pad 470 to fill second opening 605, and a bit line 610 electrically connected to bit line contact 600 may be formed to complete a vertical memory device. Bit line 610 and bit line contact 600 may be formed to include, for example, metal, metal nitride, and / or doped polysilicon.

[0098] In example embodiments, a plurality of bit line contacts 600 may be formed corresponding to the pads 470 to define a bit line contact array, a plurality of bit lines 610 may be formed in the third direction, and each bit line 610 may be formed to extend in the second direction.

[0099] The substrate processing apparatus and substrate processing method described above can be used to manufacture semiconductor devices including logic devices and memory devices. For example, the semiconductor device can be applied to various systems such as computing systems. The semiconductor device can include finFET, DRAM, VNAND, etc. The system can be applied to computers, portable computers, laptop computers, personal mobile terminals, tablet computers, cellular phones, digital music players, etc.

[0100] The foregoing is illustrative of example embodiments and should not be construed as limiting the example embodiments. Although a small number of example embodiments have been described, it will be readily appreciated by those skilled in the art that many changes are possible in the example embodiments without materially departing from the novel teachings and advantages of the present invention. Therefore, all such changes are intended to be included within the scope of the example embodiments as defined in the claims.

Claims

1. A substrate processing method, comprising the following steps: i) performing a deposition process on a plurality of substrates located in a chamber at a first temperature, respectively, wherein: The accumulation layer deposited in the chamber after performing step i) has a first thickness; ii) performing a local cleaning process at a first temperature to remove a portion of the accumulation layer, wherein the accumulation layer remaining in the chamber after performing step ii) has a second thickness less than the first thickness; iii) performing a deposition process on a plurality of substrates located in the chamber at a first temperature, respectively, wherein an accumulation layer remaining in the chamber after step iii) is performed has a first thickness; iv) alternately and repeatedly performing step ii) and step iii); and v) after step iv), performing a full cleaning process to completely remove the accumulated layers located in the chamber, wherein, during the local cleaning process, a distance between the substrate table and the showerhead in the chamber is adjusted to provide a uniform temperature distribution in the chamber, and respective flow directions of a first cleaning gas and a second cleaning gas supplied into the chamber are adjusted to provide a uniform concentration distribution in the chamber, so that the accumulation layer remaining after the local cleaning process has a uniform second thickness, The local cleaning process includes the following steps: In step 1, the distance between the substrate table and the showerhead is maintained at a first gap, and a first cleaning gas is supplied from above the substrate table through a first gas supply line and a first gas channel. In step 2, the distance between the substrate table and the showerhead is maintained at a first gap, and a first cleaning gas is supplied from above the substrate table through a second gas supply line and a second gas channel. In step 3, the distance between the substrate table and the showerhead is maintained at a second gap greater than the first gap, and a first cleaning gas is supplied from above the substrate table through a first gas supply line and a first gas channel. In step 4, the distance between the substrate table and the showerhead is maintained at a second gap greater than the first gap, and a first cleaning gas is supplied from above the substrate table through a second gas supply line and a second gas channel. In step 5, the distance between the substrate stage and the showerhead is maintained at a third gap that is larger than the first gap and smaller than the second gap, and a second cleaning gas is supplied from below the substrate stage through a lower gas injection nozzle, and In step 6, the distance between the substrate stage and the showerhead is maintained at a fourth gap smaller than the third gap, and a second cleaning gas is supplied from below the substrate stage through the lower gas injection nozzle, and The flow rate of the second cleaning gas supplied in steps 5 to 6 is greater than the flow rate of the first cleaning gas supplied in steps 1 to 4.

2. The substrate processing method according to claim 1, further comprising: In step ii), after performing a local cleaning process, a buffer layer is formed on the accumulation layer in the chamber.

3. The substrate processing method according to claim 2, wherein: The step of forming the buffer layer is performed at a first temperature.

4. The substrate processing method according to claim 3, wherein: The buffer layer includes the same material as the accumulation layer.

5. The substrate processing method according to claim 3, wherein: The first cleaning gas supplied in steps 1 to 4 and the second cleaning gas supplied in steps 5 to 6 include the same gas.

6. The substrate processing method according to claim 3, wherein: The buildup layer within the chamber includes titanium.

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