Plasma treatment vacuum chamber structure

Abstract

The present invention discloses a plasma processing vacuum chamber structure, including an insulator, an electrode plate, a first chamber and a second chamber matched with the first chamber, wherein the insulator is arranged in the first chamber, the electrode plate is arranged on a side surface of the insulator close to the second chamber, and the first chamber and the second chamber enclose a plasma processing space. The plasma processing chamber structure is designed to be a detachable first chamber and a second chamber, wherein the first chamber is used to fix components such as the insulator and the electrode plate, and the second chamber can be used to transport products to be processed, and can be matched with an automatic conveying production line to realize automatic loading and unloading, thereby improving product processing efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of plasma processing, and in particular to a plasma processing vacuum chamber structure. Background Art

[0002] Most of the vacuum plasma processing equipment on the market are stand-alone machines independent of the automation system. The cavity structure design of the plasma processing equipment requires manual material loading and unloading, which greatly affects the processing efficiency. Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide a plasma processing vacuum chamber structure which does not require manual material loading and unloading.

[0004] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0005] A plasma processing vacuum chamber structure includes an insulator, an electrode plate, a first chamber and a second chamber matched with the first chamber. The insulator is arranged in the first chamber, and the electrode plate is arranged on a side surface of the insulator close to the second chamber. The first chamber and the second chamber enclose a plasma processing space.

[0006] Furthermore, a first recessed position adapted to the electrode plate is provided on a side surface of the insulator close to the second cavity.

[0007] Furthermore, it also includes a conductive strip, and a second recessed position adapted to the conductive strip is provided on one side of the insulator close to the electrode plate, and the conductive strip is electrically connected to the electrode plate.

[0008] Furthermore, the insulator is made of ceramic, and the thickness of the insulator is greater than or equal to 20 mm.

[0009] Furthermore, an air intake pipe is provided in the first cavity, and the air intake pipe is arranged close to the inner wall of the first cavity. The air intake pipe is U-shaped, and air intake holes are provided on two opposite sides of the air intake pipe, and the air intake holes on the two opposite sides are staggered.

[0010] Furthermore, it also includes a sealing member, a groove is provided on one side of the first cavity close to the second cavity, and the sealing member is arranged in the groove.

[0011] Furthermore, a conductive column is disposed on the first cavity, and the second cavity is electrically connected to the first cavity through the conductive column.

[0012] Furthermore, a window structure is provided on the first cavity.

[0013] Furthermore, a flange is provided on the first cavity, and the flange is communicated with the plasma processing space.

[0014] Furthermore, an air distribution plate is provided on the inner side wall of the first cavity, the air distribution plate is arranged corresponding to the flange, and a gap is left between the air distribution plate and the flange.

[0015] The beneficial effects of the present invention are as follows: the plasma processing chamber structure is designed to be a detachable first chamber and a second chamber, the first chamber is used to fix components such as insulators and electrode plates, and the second chamber can be used to transport products to be processed. Automatic loading and unloading can be achieved in conjunction with an automatic conveying production line, thereby improving product processing efficiency; an insulator is arranged between the electrode plate and the first chamber to prevent abnormal power generation of the electrode and improve safety performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a schematic diagram of the overall structure of a plasma processing vacuum chamber structure according to the first embodiment of the present invention;

[0017] Figure 2 This is a structural explosion diagram of a plasma processing vacuum chamber structure according to Embodiment 1 of the present invention;

[0018] Figure 3 Another structural explosion diagram of the plasma processing vacuum chamber structure according to the first embodiment of the present invention;

[0019] Figure 4 It is a partial structural schematic diagram of a plasma processing vacuum chamber structure according to the first embodiment of the present invention;

[0020] Figure 5 It is another partial structural schematic diagram of the plasma processing vacuum chamber structure according to the first embodiment of the present invention;

[0021] Figure 6 Schematic diagram of the air intake of the air intake pipe in the plasma processing vacuum chamber structure according to the first embodiment of the present invention;

[0022] Figure 7 Schematic diagram of the airflow of the plasma processing vacuum chamber structure according to the first embodiment of the present invention.

[0023] Description of labels:

[0024] 1. Insulator; 101. First recess; 102. Second recess; 2. Electrode plate; 3. First cavity; 31. Groove; 4. Second cavity; 5. Conductive strip; 6. Seal; 7. Conductive column; 8. Window structure; 9. Flange; 10. Air inlet pipe; 1001. Air inlet hole; 11. Air distribution plate. DETAILED DESCRIPTION

[0025] In order to explain the technical content, achieved objectives and effects of the present invention in detail, the following is an explanation in conjunction with the implementation modes and the accompanying drawings.

[0026] The most critical concept of the present invention is to design the plasma processing chamber structure into a detachable first chamber and a second chamber, wherein the first chamber is used to fix components such as insulators and electrode plates, and the second chamber can be used to transport the products to be processed, and automatic loading and unloading can be realized in combination with an automatic conveying production line.

[0027] Please refer to Figures 1 to 7 A plasma processing vacuum chamber structure includes an insulator 1, an electrode plate 2, a first cavity 3 and a second cavity 4 matched with the first cavity 3. The insulator 1 is arranged in the first cavity 3, and the electrode plate 2 is arranged on a side surface of the insulator 1 close to the second cavity 4. The first cavity 3 and the second cavity 4 enclose a plasma processing space.

[0028] From the above description, it can be seen that the beneficial effects of the present invention are: the plasma processing chamber structure is designed to be a detachable first chamber and a second chamber, the first chamber is used to fix components such as insulators and electrode plates, and the second chamber can be used to transport the products to be processed, and it can be combined with an automatic conveyor production line to realize automatic loading and unloading, thereby improving product processing efficiency; an insulator is arranged between the electrode plate and the first chamber to prevent abnormal power generation of the electrode and improve safety performance.

[0029] Furthermore, a first recessed position 101 adapted to the electrode plate 2 is provided on a side surface of the insulator 1 close to the second cavity 4 .

[0030] From the above description, it can be seen that a first recessed position adapted to the electrode plate is provided on the insulator, and the side of the first recessed position wraps around the electrode plate, eliminating the possibility of discharge of the four sides of the electrode plate to the negative electrode. Therefore, it is ensured that during the operation of the device, there is only one plane of the electrode plate parallel to the negative electrode discharge, the glow is stable and uniform, and the plasma treatment effect of each part in the chamber is highly uniform.

[0031] Furthermore, it also includes a conductive strip 5 , and a second recessed position 102 adapted to the conductive strip 5 is provided on one side of the insulator 1 close to the electrode plate 2 , and the conductive strip 5 is electrically connected to the electrode plate 2 .

[0032] It can be seen from the above description that providing the conductive strips can ensure more complete high-frequency penetration contact and greatly reduce power consumption.

[0033] Furthermore, the insulator 1 is made of ceramic, and the thickness of the insulator 1 is greater than or equal to 20 mm.

[0034] From the above description, it can be seen that ceramic material is a material that can ensure that the original physical and chemical properties do not change under the long-term glow irradiation of the vacuum plasma chamber, and will not produce any trace particles that affect the effectiveness of the plasma treatment product; the high-strength ceramic material can withstand shocks without damage during the long-term use of the device; when the thickness of the insulator is greater than or equal to 20mm, it is easy to process and not easy to deform.

[0035] Furthermore, an air intake pipe 10 is provided in the first cavity 3, and the air intake pipe 10 is arranged close to the inner wall of the first cavity 3. The shape of the air intake pipe 10 is U-shaped, and air intake holes 1001 are provided on two opposite sides of the air intake pipe 10, and the air intake holes 1001 on the two opposite sides are staggered.

[0036] From the above description, it can be seen that the staggered setting of the air inlet holes can make the gas in the cavity evenly distributed, and will not cause large local gas flow or high gas density due to gas convection and high air pressure, which greatly ensures the internal uniformity of the device during operation.

[0037] Furthermore, a sealing member 6 is included. A groove 31 is provided on one side of the first cavity 3 close to the second cavity 4 , and the sealing member 6 is disposed in the groove 31 .

[0038] It can be seen from the above description that the sealing member can improve the sealing performance between the first cavity and the second cavity, thereby improving the processing effect.

[0039] Furthermore, a conductive column 7 is disposed on the first cavity 3 , and the second cavity 4 is electrically connected to the first cavity 3 via the conductive column 7 .

[0040] It can be seen from the above description that providing a conductive column can achieve a good grounding effect.

[0041] Furthermore, a window structure 8 is provided on the first cavity 3 .

[0042] It can be seen from the above description that the window structure is provided to facilitate observation of the plasma processing conditions.

[0043] Furthermore, a flange 9 is provided on the first cavity 3, and the flange 9 is communicated with the plasma processing space.

[0044] It can be seen from the above description that providing a flange facilitates connection with vacuum equipment.

[0045] Furthermore, an air distribution plate 11 is further provided on the inner side wall of the first cavity 3 , and the air distribution plate 11 is arranged corresponding to the flange 9 , and a gap is left between the air distribution plate 11 and the flange 9 .

[0046] From the above description, it can be seen that the gas distribution plate can effectively block and disperse the direct suction of the external vacuum pump and protect the uniform flow of internal gas. The shape can be designed to be circular, so that it can more evenly disperse the suction of the vacuum pump during operation, making the internal gas flow more balanced and stable, and preventing large gas flow in local channels from affecting the plasma generation concentration and the uniformity of process gas distribution.

[0047] Please refer to Figures 1 to 7 , Embodiment 1 of the present invention is:

[0048] A plasma treatment vacuum chamber structure, such as Figures 1 to 3 As shown, it includes an insulator 1, an electrode plate 2, a first cavity 3 and a second cavity 4 matched with the first cavity 3. The insulator 1 is arranged in the first cavity 3, and the electrode plate 2 is arranged on a side surface of the insulator 1 close to the second cavity 4. The material of the electrode plate 2 is aluminum. The first cavity 3 and the second cavity 4 enclose a plasma processing space, and the second cavity 4 can transport the product to be processed, and then after closing with the first cavity 3, the plasma treatment of the product to be processed can be performed.

[0049] The insulator 1 is made of ceramic, and its thickness is greater than or equal to 20 mm. After actual verification and testing of various materials, it is found that ceramic is the only material that can ensure that the original physical and chemical properties do not change under the long-term glow irradiation of vacuum plasma, and will not produce any trace particles that affect the effectiveness of plasma-treated products; the high-strength ceramic material can withstand shocks without damage during the long-term use of the device; in long-term verification, it is found that the different thicknesses of this ceramic component will affect its actual performance. The thickness of the plate less than 20 mm is relatively thin when specially customized, and the processing difficulty is high. In addition, the component will be deformed in a long-term plasma environment, which ultimately affects the use function of the entire device; the chemical properties of the ceramic itself are stable, and it is not easy to undergo chemical reactions to produce other gaseous substances during the erosion process of plasma, ensuring that this device meets the needs of various industries in application (such as the medical and health industry does not allow other components to affect products that require plasma treatment) without causing potential hazards.

[0050] like Figure 4As shown, a first recessed position 101 adapted to the electrode plate 2 is provided on one side surface of the insulator 1 close to the second cavity 4. The side of the first recessed position 101 wraps around the electrode plate 2, eliminating the possibility of the four sides of the electrode plate 2 discharging toward the negative electrode, thereby ensuring that during the operation of the device, the electrode plate 2 has one and only one plane parallel to the negative electrode for discharge, the glow is stable and uniform, and the plasma treatment effect of each part in the chamber is highly uniform. When the first recessed position 101 is not provided, the five surfaces of the electrode plate 2 can meet the discharge conditions with the negative electrode. Because the distances between each surface and the negative electrode are different, there will be uneven local discharge inside the cavity, which results in the external manifestation of observing a particularly bright glow part inside, and the actual measured effect of product treatment is inconsistent in various places.

[0051] In this embodiment, the plasma processing vacuum chamber structure further includes a conductive strip 5 and a sealing member 6. A second recessed position 102 adapted to the conductive strip 5 is provided on one side of the insulator 1 close to the electrode plate 2, and the conductive strip 5 is electrically connected to the electrode plate 2. In this embodiment, the conductive strip 5 is made of copper. A groove 31 is provided on one side of the first cavity 3 close to the second cavity 4, and the sealing member 6 is disposed in the groove 31.

[0052] like Figure 5 As shown, an air inlet pipe 10 is provided in the first cavity 3, and the air inlet pipe 10 is arranged close to the inner wall of the first cavity 3. The shape of the air inlet pipe 10 is U-shaped, and air inlet holes 1001 are arranged on two opposite sides of the air inlet pipe 10, and the air inlet holes 1001 on the two opposite sides are staggered. The diameter of the air inlet hole 1001 can be set as needed, and preferably, the diameter of the air inlet hole 1001 is 1 mm. Figure 6 This is a schematic diagram of the air intake of the air intake pipe. The design of staggered openings for air outlet can effectively distribute the gas evenly in the cavity when the process gas is introduced, and will not cause large local gas flow or high gas density due to gas convection and high air pressure, which greatly ensures the internal uniformity of the device during operation.

[0053] like Figure 5 As shown, a conductive column 7 is provided on the first cavity 3, and the second cavity 4 is electrically connected to the first cavity 3 through the conductive column 7, and the conductive column 7 is made of copper. A window structure 8 and a flange 9 are provided on the first cavity 3, and the flange 9 is connected to the plasma processing space. The flange 9 is provided to facilitate connection with a vacuum generating device, and a sealing structure can be provided at the flange 9 so that the pressure inside the cavity can drop rapidly and the negative pressure state can be made more stable. An air distribution plate 11 is also provided on the inner wall of the first cavity 3, and the air distribution plate 11 is provided corresponding to the flange 9, and a gap is left between the air distribution plate 11 and the flange 9 to allow gas to pass through. As shown Figure 7As shown, the gas distribution plate can effectively block and disperse the direct suction of the external vacuum pump and protect the uniform flow of internal gas. The shape can be designed to be circular, so that it can disperse the suction of the vacuum pump more evenly during operation, making the internal gas flow more balanced and stable, and preventing large gas flow in local channels from affecting the plasma generation concentration and the uniformity of process gas distribution.

[0054] When the plasma processing vacuum chamber structure of this embodiment is working, the product to be processed is placed on the second chamber 4, and the first chamber 3 and the second chamber 4 are tightly combined. At this time, the conductive column 7 makes the first chamber 3 and the second chamber 4 electrically conductive, achieving a good grounding effect; the gas in the plasma processing space is extracted through the flange 9, so that the inside of the chamber enters a low-pressure state; the plasma power supply supplies a high-frequency electric field connected to the electrode plate 2 through the conductive strip 5, and there is a layer of insulator 1 between the electrode plate 2 and the chamber, which better prevents abnormal power generation of the electrode plate 2 and eliminates the danger of the equipment. This connection method makes the power peeping contact more sufficient and the power consumption is large. The concentration of plasma generated is greatly reduced, and the effect of treating products is better. At this time, the inside of the cavity meets the glow discharge conditions, and the process gas is introduced. The process gas enters through the air inlet hole 1001 on the air inlet pipe 10, and plasma can be generated to perform all-round plasma cleaning on the products in the plasma treatment space. The actual plasma generation status inside the cavity can be observed through the window structure 8, and the operation of the equipment can be monitored in real time. After a certain period of treatment, gas is filled in through the flange 9 to restore the cavity to a normal pressure state, and at the same time, the plasma power supply and the process gas input are stopped, the first cavity 3 and the second cavity 4 are separated, and the product can be taken out.

[0055] In summary, the plasma processing vacuum chamber structure provided by the present invention can realize automatic loading and unloading without manual operation, improve product processing efficiency, and has good safety performance.

[0056] The above descriptions are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent transformations made using the contents of the present invention's specification and drawings, or directly or indirectly applied in related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A plasma processing vacuum chamber structure, characterized in that: The device comprises an insulator, an electrode plate, a first cavity and a second cavity matched with the first cavity, wherein the insulator is arranged in the first cavity, the electrode plate is arranged on a side surface of the insulator close to the second cavity, the first cavity and the second cavity enclose a plasma processing space, and the first cavity and the second cavity are separable; The first cavity is provided with a conductive column, and the second cavity is electrically connected to the first cavity through the conductive column.

2. The plasma processing vacuum chamber structure according to claim 1, characterized in that: A first recessed position matched with the electrode plate is provided on one side surface of the insulator close to the second cavity.

3. The plasma processing vacuum chamber structure according to claim 2, characterized in that: It also includes a conductive strip. A second recessed position matched with the conductive strip is provided on one side of the insulator close to the electrode plate. The conductive strip is electrically connected to the electrode plate.

4. The plasma processing vacuum chamber structure according to claim 1, characterized in that: The insulator is made of ceramic, and the thickness of the insulator is greater than or equal to 20 mm.

5. The plasma processing vacuum chamber structure according to claim 1, characterized in that: An air intake pipe is provided in the first cavity, and the air intake pipe is arranged close to the inner wall of the first cavity. The air intake pipe is U-shaped, and air intake holes are provided on two opposite sides of the air intake pipe, and the air intake holes on the two opposite sides are staggered.

6. The plasma processing vacuum chamber structure according to claim 1, characterized in that: It also includes a sealing component. A groove is provided on one side of the first cavity close to the second cavity, and the sealing component is arranged in the groove.

7. The plasma processing vacuum chamber structure according to claim 1, characterized in that: A window structure is provided on the first cavity.

8. The plasma processing vacuum chamber structure according to claim 1, characterized in that: The first cavity is provided with a flange, and the flange is communicated with the plasma processing space.

9. The plasma processing vacuum chamber structure according to claim 8, characterized in that: An air distribution plate is also provided on the inner side wall of the first cavity. The air distribution plate is arranged corresponding to the flange, and a gap is left between the air distribution plate and the flange.

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