Preparation method of tungsten-silicon target blank

A target blank, tungsten-silicon technology, applied in the field of tungsten-silicon target blank preparation, can solve the problems of uneven distribution of free silicon phase, affecting performance and yield, poor conductivity, etc., to achieve defect-free microstructure and excellent sputtering The effect of using performance

CN112225565AActive Publication Date: 2021-01-15KONFOONG MATERIALS INTERNATIONAL CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2021-01-15

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Abstract

The invention relates to a preparation method of a tungsten-silicon target blank, which comprises the steps of (1) mixing tungsten silicide powder and silicon powder to obtain mixed powder; and (2) carrying out hot pressed sintering on the mixed powder obtained in the step (2) to obtain a tungsten-silicon target blank, wherein the hot pressed sintering comprises first heating, second heating and pressurizing treatment which are carried out in sequence. According to the method provided by the invention, the tungsten-silicon target blank of which the density is greater than or equal to 99% is prepared by redesigning the preparation raw materials and adopting a specific hot-pressing sintering process, the target blank is free of defects and uniform in microstructure, and the tungsten-silicontarget material produced by using the target blank has excellent sputtering usability.
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Description

technical field

[0001] The invention relates to the field of target blank preparation, in particular to a method for preparing a tungsten-silicon target blank. Background technique

[0002] At present, the tungsten-silicon alloy target is a new type of alloy target. As a good conductor for vacuum sputtering, it can be used in the field of electronic gate materials and electronic thin films.

[0003] In recent years, the demand for high-purity tungsten-silicon targets has increased significantly at home and abroad. At present, domestically produced tungsten-silicon targets cannot meet the quality requirements of the high-end electronics industry, and are only partially used in low-end products. At present, only a few developed countries and regions such as Japan and the United States can produce high-purity tungsten-silicon targets. Research and development of tungsten-silicon target production technology is a powerful means to break foreign monopoly and reduce the cost of th...

Examples

Embodiment 1

[0057] This embodiment provides a method for preparing a tungsten-silicon target blank. The preparation method includes the following steps:

[0058] (1) mixing tungsten silicide powder and silicon powder to obtain mixed powder;

[0059] The mass ratio of tungsten silicide powder and silicon powder is 11:1, the particle size of tungsten silicide powder is 70 μm, and the particle size of silicon powder is 9 μm;

[0060] Silicon balls are used for dry mixing during mixing, the amount of silicon balls added during mixing is 10% of the powder mass, and the mixing time is 24 hours;

[0061] (2) hot pressing and sintering the mixed powder obtained in step (2) to obtain the tungsten-silicon target blank;

[0062] The flatness of the powder after the powder is added to the mold in hot pressing sintering is 4mm, and the flatness of the powder after compaction in the mold is 0.4mm; when the hot pressing sintering starts, vacuumize to a vacuum degree of 35Pa;

[0063] Hot press sinteri...

Embodiment 2

[0070] This embodiment provides a method for preparing a tungsten-silicon target blank. The preparation method includes the following steps:

[0071] (1) mixing tungsten silicide powder and silicon powder to obtain mixed powder;

[0072] The mass ratio of tungsten silicide powder and silicon powder is 7:1, the particle size of tungsten silicide powder is 60 μm, and the particle size of silicon powder is 5 μm;

[0073] Silicon balls are used for dry mixing during mixing, the amount of silicon balls added during mixing is 8% of the powder mass, and the mixing time is 30h;

[0074] (2) hot pressing and sintering the mixed powder obtained in step (2) to obtain the tungsten-silicon target blank;

[0075] The flatness of the powder after the powder is added to the mold in hot pressing sintering is 3mm, and the flatness of the powder after compaction in the mold is 0.1mm; when the hot pressing sintering starts, vacuumize to a vacuum degree of 20Pa;

[0076] Hot press sintering incl...

Embodiment 3

[0083] This embodiment provides a method for preparing a tungsten-silicon target blank. The preparation method includes the following steps:

[0084] (1) mixing tungsten silicide powder and silicon powder to obtain mixed powder;

[0085] The mass ratio of tungsten silicide powder and silicon powder is 15:1, the particle size of tungsten silicide powder is 45 μm, and the particle size of silicon powder is 7 μm;

[0086] Silicon balls are used for dry mixing during mixing, the amount of silicon balls added during mixing is 12% of the powder mass, and the mixing time is 34 hours;

[0087] (2) hot pressing and sintering the mixed powder obtained in step (2) to obtain the tungsten-silicon target blank;

[0088] The flatness of the powder after the powder is added to the mold in hot pressing sintering is 1mm, and the flatness of the powder after compaction in the mold is 0.3mm; when the hot pressing sintering starts, vacuumize to a vacuum degree of 33Pa;

[0089] Hot press sinteri...