A plasma energy control switch circuit and its control system

Abstract

The present invention discloses a plasma energy control switch circuit and its control system, including a peak power control circuit, a single chip microcomputer and a switch module connected in series in the plasma energy control system circuit, wherein: the peak power control circuit is used to dynamically sample and filter the current of the plasma energy control system, and adjust the amplification factor of the generated voltage signal to adjust the peak power point, and then send it to the single chip microcomputer; the single chip microcomputer is used to receive and process the voltage signal sent by the peak power control circuit, and control the working cycle of the switch module according to the processed voltage signal, so that the output power of the plasma energy control system does not exceed the preset peak power and meets the preset power curve. The present invention can solve the problems of weak instantaneous energy excitation output by the plasma energy control system, difficult to excite plasma, difficult to continuously generate plasma, low cutting efficiency, sticky knife, and blunt cutting.

Description

Technical Field

[0001] The present invention relates to the field of medical equipment, and in particular to a plasma energy control switch circuit and a control system thereof. Background Art

[0002] The radio frequency plasma surgery system is a new generation of low-temperature plasma surgery system, which can be used for soft tissue dissection, resection, hemostasis and drying in surgical operations. It can be used in conjunction with an endoscope system for intracavitary surgery or with an imaging system for interventional treatment. It eliminates the damage and harm of radio frequency to doctors and patients and improves the efficiency of surgery. It also has various electrodes with different outer diameters, different curvatures and different lengths suitable for different departments.

[0003] When using a plasma surgical system for surgery, the energy of the plasma surgical system needs to be controlled within a certain range. The instantaneous energy output by the existing plasma surgical system is weak, and it is not easy to excite plasma. Plasma is not easy to generate continuously, which will cause problems such as sticking to the knife, the scalpel is not sharp, and the cutting efficiency is low. Summary of the invention

[0004] In view of this, the present application provides a plasma energy control switch circuit and its control system. The switch circuit is used to be connected in series in the circuit of the plasma energy control system, which solves the problems of weak instantaneous energy excitation, difficulty in exciting plasma, difficulty in continuous plasma generation, low cutting efficiency, and knife sticking and blunt cutting of the scalpel. In order to solve the above technical problems, the technical solutions provided by the present invention are as follows:

[0005] One aspect of the present invention is to provide a plasma energy control switch circuit, including a peak power control circuit, a single chip microcomputer and a switch module connected in series in a plasma energy control system circuit, wherein:

[0006] The peak power control circuit is used to dynamically sample and filter the current of the plasma energy output module (i.e., the bridge arm bus of the full-bridge inverter and boost circuit described later) in the plasma energy control system, generate a voltage signal, and adjust the amplification factor of the voltage signal to adjust the peak power point, and then send the voltage signal after the amplification factor adjustment to the single chip microcomputer;

[0007] The single chip microcomputer is used to receive and process the voltage signal sent by the peak power control circuit, and control the working cycle of the switch module according to the processed voltage signal (specifically, when the voltage signal is greater than a threshold value), so that the output power of the plasma energy output module does not exceed a preset peak power and satisfies a preset power curve.

[0008] Furthermore, the switch module includes a VMOS type switch module or a relay type switch module.

[0009] Furthermore, the VMOS switch module includes a PMOS switch module or an NMOS switch module.

[0010] Furthermore, the VMOS switch module includes an anti-interference unit, an amplifying switch unit, a driving switch unit, and a switch unit connected in series in a plasma energy control system circuit, wherein:

[0011] The anti-interference unit is used to receive the switch control signal sent by the single chip microcomputer, perform anti-interference processing, and then send it to the amplifying switch unit;

[0012] The amplifying switch unit is used to receive and amplify the switch control signal sent by the anti-interference unit, and then send it to the driving switch unit;

[0013] The driving switch unit is used to receive the switch control signal sent by the amplifying switch unit, and then perform on-off actions (for example, when the switch control signal sent by the single-chip microcomputer to the anti-interference unit is at a low level, the driving switch unit is switched on; otherwise, the driving switch unit is disconnected);

[0014] The switch unit is used to maintain the same on-off action as the driving switch unit.

[0015] Furthermore, in the peak power control circuit, the amplification factors are different for different types of cutter heads; for the same type of cutter head, the amplification factor after each sampling and filtering is constant.

[0016] Furthermore, the switch module includes a first MOS tube Q1, a second MOS tube Q2, a first voltage regulator tube Z1, a first transistor S1, a first diode D1, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth capacitor C5 and a first external power supply U1, wherein:

[0017] The source and drain of the first MOS tube Q1 are respectively connected in series in the circuit of the plasma energy control system as the input end and the output end of the switch module, the first resistor R1 and the first voltage regulator Z1 are simultaneously connected in parallel between the source and the gate of the first MOS tube Q1, and the positive electrode of the first voltage regulator Z1 is connected to the gate of the first MOS tube Q1, the gate of the first MOS tube Q1 is connected to one end of the second resistor R2, the other end of the second resistor R2 is connected to the drain of the second MOS tube Q2, the source of the second MOS tube Q2 is grounded, and the second M The gate of the OS tube Q2 is connected to one end of the third resistor R3 and the collector of the first transistor S1 at the same time, the other end of the third resistor R3 is connected to the first external power supply U1, the emitter of the first transistor S1 is grounded, the base of the first transistor S1 is connected to the cathode of the first diode D1 and one end of the fifth capacitor C5 at the same time, the other end of the fifth capacitor C5 is grounded, the anode of the first diode D1 is connected to one end of the fourth resistor R4, and the other end of the fourth resistor R4 is connected to the single-chip microcomputer as the switch control input end of the switch module.

[0018] Furthermore, the peak power control circuit includes a bus sampling unit, an input filtering unit, an amplification factor adjustment unit and an output unit, wherein:

[0019] The bus sampling unit is used to dynamically sample the current of the subsequent circuit of the switch module (i.e., the full-bridge inverter and boost circuit described below), and send the sampling signal to the input filter unit;

[0020] The input filtering unit is used to receive the sampling signal sent by the bus sampling unit and perform filtering processing to generate a voltage signal, and then send the voltage signal to the amplification factor adjustment unit;

[0021] The amplification factor adjustment unit is used to receive the voltage signal, and perform amplification factor adjustment to adjust the peak power point, and then send the voltage signal after the amplification factor adjustment to the output unit;

[0022] The output unit is used to receive the voltage signal sent by the amplification factor adjustment unit and send it to the single chip microcomputer.

[0023] Further, specifically, the peak power control circuit samples the bus current of the bridge arm bus of the full-bridge inverter and boost circuit through a sampling resistor.

[0024] Furthermore, the switch circuit also includes a short circuit detection circuit.

[0025] Furthermore, the short-circuit detection circuit is a parallel short-circuit detection circuit, comprising

[0026] The parallel sampling unit is used to perform parallel sampling on the next stage circuit of the switch module (i.e., the boost output end of the full-bridge inverter and boost circuit described later), and send the sampled voltage to the next stage;

[0027] The Hall voltage sensor is used to receive the sampled voltage sent by the parallel sampling unit and perform isolation processing, and then send the obtained sampled voltage to the next stage;

[0028] The rectification and filtering unit is used to receive the sampled voltage sent by the Hall voltage sensor and perform rectification and filtering, and then send the obtained sampled voltage to the next stage;

[0029] The comparison unit is used to receive the sampled voltage sent by the rectification and filtering unit and compare it with the adjusted reference voltage, and then send the generated short-circuit detection signal to the single-chip microcomputer for short-circuit judgment and on-off action.

[0030] Furthermore, the working cycle of the switch module consists of an off time and an on time, and the single chip microcomputer controls the on time. When the preset peak power remains unchanged (i.e., the gear position does not change), the off time remains unchanged (only the length of the on time is adjusted).

[0031] Another aspect of the present application is to provide a plasma energy control system, including an AC / DC module, a DC control module, a plasma energy output module and a control panel, and also includes the above-mentioned switching circuit, wherein the switching circuit is connected in series between the DC control module and the plasma energy output module through the internal switching module.

[0032] Furthermore, the plasma energy output module includes a full-bridge inverter and boost circuit, an impedance matching and output circuit, and a second drive control circuit, wherein:

[0033] The second drive control circuit is used to drive the full-bridge inverter and boost circuit after being isolated;

[0034] The full-bridge inverter and boost circuit is used to invert and boost the voltage output by the switch circuit, and then output it to the impedance matching and output circuit;

[0035] The impedance matching and output circuit is used to perform impedance matching on the voltage input by the full-bridge inverter and boost circuit and output it to the control panel.

[0036] The present invention provides a plasma energy control switch circuit and a control system thereof. The switch module in the switch circuit is used to be connected in series in the circuit of the plasma energy control system. The peak power control circuit in the switch circuit is used to dynamically sample and filter the current of the plasma energy output module of the plasma energy control system, generate a voltage signal, and adjust the amplification factor of the voltage signal to adjust the peak power point. Then, the voltage signal after the amplification factor adjustment is sent to the single chip microcomputer. The single chip microcomputer processes the received voltage signal and controls the working cycle of the switch module, so that the output power of the plasma energy output module (that is, the output power of the plasma energy control system) does not exceed the preset peak power and meets the preset power curve, thereby solving the problems of weak instantaneous energy excitation, difficulty in exciting plasma, difficulty in continuous plasma generation, low cutting efficiency, and the occurrence of knife sticking and blunt cutting of the scalpel. In addition, the present invention also provides a plasma energy control system including the above-mentioned plasma energy control switch circuit. When the plasma surgery system adopts the plasma energy control system provided by the present invention, the energy excitation is strong, the cutting efficiency is high, and the problems of knife sticking and blunt cutting of the scalpel will not occur. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 The figure is a structural block diagram of a plasma energy control switch circuit according to an exemplary embodiment.

[0038] Figure 2 The figure is a schematic diagram of a switch module circuit structure according to an exemplary embodiment.

[0039] Figure 3 The figure is a structural block diagram of a peak power control circuit according to an exemplary embodiment.

[0040] Figure 4 The present invention is a schematic structural diagram of a peak power control circuit, a parallel short-circuit detection circuit and a full-bridge inverter and boost circuit according to an exemplary embodiment.

[0041] Figure 5 The figure is a structural block diagram of a plasma energy control system according to an exemplary embodiment.

[0042] Figure 6 It is a schematic diagram of the structure of a relay type switch module according to an exemplary embodiment.

[0043] Figure 7 The figure is a schematic diagram of a parallel short-circuit detection circuit structure according to an exemplary embodiment. DETAILED DESCRIPTION

[0044] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0045] Example 1

[0046] like Figure 1 As shown, this embodiment provides a plasma energy control switch circuit, including a peak power control circuit, a single chip microcomputer and a switch module, wherein:

[0047] The peak power control circuit is used to dynamically sample and filter the current of the full-bridge inverter and boost circuit of the plasma energy output module in the plasma energy control system, generate a voltage signal, and adjust the amplification factor of the voltage signal to adjust the peak power point, and then send the voltage signal after the amplification factor adjustment to the single chip microcomputer;

[0048] The single chip microcomputer is used to receive and process the voltage signal sent by the peak power control circuit, and control the working cycle of the switch module according to the processed voltage signal (specifically, when the voltage signal is greater than the threshold; when the voltage signal is less than or equal to the set threshold, it is not processed, that is, the switch module is always turned on), so that the output power of the plasma energy output module does not exceed the preset peak power and meets the preset power curve.

[0049] As a preference, the switch module in this embodiment may include a VMOS switch module or a relay switch module. When the VMOS switch module is used in this embodiment, the VMOS switch module may include an anti-interference unit, an amplifying switch unit, a driving switch unit, and a switch unit connected in series in a plasma energy control system circuit, wherein:

[0050] The anti-interference unit is used to receive the switch control signal sent by the single chip microcomputer, perform anti-interference processing, and then send it to the amplifying switch unit;

[0051] The amplifying switch unit is used to receive and amplify the switch control signal sent by the anti-interference unit, and then send it to the driving switch unit;

[0052] The driving switch unit is used to receive the switch control signal sent by the amplifying switch unit, and then perform on-off actions; for example, when the switch control signal sent by the single-chip microcomputer to the anti-interference unit is at a low level, the driving switch unit is turned on; when the switch control signal sent by the single-chip microcomputer to the anti-interference unit is at a high level, the driving switch unit is turned off;

[0053] The switch unit is used to maintain the same on-off action as the driving switch unit.

[0054] Furthermore, in the peak power control circuit, the amplification factors are different for different types of cutter heads; for the same type of cutter head, the amplification factor after each sampling and filtering is constant.

[0055] It should be noted here that the input and output ends of the switch unit are the input and output ends of the switch module. Figure 2 As shown, the circuit structure of the switch module in this embodiment may include a first MOS transistor Q1, a second MOS transistor Q2, a first voltage regulator Z1, a first transistor S1, a first diode D1, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth capacitor C5 (the fifth capacitor C5 may be omitted) and a third external power supply U3, wherein:

[0056] The source and drain of the first MOS tube Q1 are respectively connected in series in the circuit of the plasma energy control system as the input end and the output end of the switch module, the first resistor R1 and the first voltage regulator Z1 are simultaneously connected in parallel between the source and the gate of the first MOS tube Q1, and the positive electrode of the first voltage regulator Z1 is connected to the gate of the first MOS tube Q1, the gate of the first MOS tube Q1 is connected to one end of the second resistor R2, the other end of the second resistor R2 is connected to the drain of the second MOS tube Q2, the source of the second MOS tube Q2 is grounded, and the second M The gate of the OS tube Q2 is connected to one end of the third resistor R3 and the collector of the first transistor S1 at the same time, the other end of the third resistor R3 is connected to the third external power supply U3, the emitter of the first transistor S1 is grounded, the base of the first transistor S1 is connected to the cathode of the first diode D1 and one end of the fifth capacitor C5 at the same time, the other end of the fifth capacitor C5 is grounded, the anode of the first diode D1 is connected to one end of the fourth resistor R4, and the other end of the fourth resistor R4 is connected to the single-chip microcomputer as the switch control input end of the switch module.

[0057] In the switch module circuit structure provided in the present embodiment, the fourth resistor R4, the first diode D1 and the fifth capacitor C5 together form an anti-interference unit, wherein the first diode D1 and the fifth capacitor C5 together can play a role in preventing false triggering and anti-interference, the third resistor R3 and the first transistor S1 form an amplifying switch unit, the second resistor R2 and the second MOS transistor Q2 form a driving switch unit, wherein the second resistor R2 is a voltage-dividing resistor, the first MOS transistor, the first resistor R1 and the first voltage-stabilizing transistor Z1 form a switch unit, and the voltage-stabilizing transistor is provided in the switch unit to ensure the gate voltage stability of the first MOS transistor Q1 and improve the circuit working quality; in order to simplify the circuit structure, the first MOS transistor in the switch unit can adopt a PMOS transistor, and in specific work, the base of the first transistor S1 is connected from the microcontroller When a high level is received in the single-chip microcomputer, the first triode S1 is turned on, the gate of the second MOS tube Q2 is low level, and the second MOS tube Q2 is disconnected. At this time, the gate of the first MOS tube Q1 in the switch unit is high level, the first MOS tube Q1 is disconnected, and accordingly, the switch unit and the plasma energy control system are disconnected; when the base of the first triode S1 receives a low level from the single-chip microcomputer, the gate of the second MOS tube Q2 is high level, and the second MOS tube Q2 is turned on. At this time, the gate of the first MOS tube Q1 in the switch unit is low level, the first MOS tube Q1 is turned on, the switch unit is turned on, and accordingly, the switch unit and the plasma energy control system are turned on. Therefore, the single-chip microcomputer controls the working cycle of the switch circuit by sending a high level of a certain length and a low level of a certain length to the switch control input end of the switch module. In addition, as another embodiment different from the above-mentioned switch module circuit structure, the first MOS tube Q1 in the switch unit can also use an NMOS tube or a relay to realize the switch function. The use of a VMOS tube can make the reliability of this embodiment higher, with the characteristics of rapid switching, not easy to damage, and long service life. In this embodiment, the third external power supply U3 can be 12V.

[0058] As a preference, Figure 3 As shown, the peak power control circuit includes a bus sampling unit, an input filtering unit, an amplification factor adjustment unit and an output unit, wherein:

[0059] The bus sampling unit is used to dynamically sample the current of the plasma energy output module and send the sampling signal to the input filter unit;

[0060] The input filtering unit is used to receive the sampling signal sent by the bus sampling unit and perform filtering processing to generate a voltage signal, and then send the voltage signal to the amplification factor adjustment unit;

[0061] The amplification factor adjustment unit is used to receive the voltage signal, adjust the amplification factor, and then send the voltage signal after the amplification factor adjustment to the output unit; here, the amplification factor of the amplification factor adjustment unit is determined according to the preset power curves of different types of cutter heads. Different cutter head models may have different amplification factors. For example, if the peak power of the preset power curve A of the cutter head A is 300W, then the corresponding amplification factor is 2. If the peak power is changed, the corresponding amplification factor is changed;

[0062] The output unit is used to receive the voltage signal sent by the amplification factor adjustment unit and send it to the single chip microcomputer.

[0063] In order to better explain the peak power control circuit, Figure 4 As shown, this embodiment provides a specific peak power control circuit, including a first amplifier V1, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9 and a first sliding potentiometer RW1 (or an electronic potentiometer or other equivalent elements), wherein:

[0064] The positive input terminal of the first amplifier V1 is connected to one end of the fifth resistor R5 and one end of the second capacitor C2 at the same time, the other end of the second capacitor C2 is grounded, the other end of the fifth resistor R5 is grounded through the first capacitor C1, the first capacitor C1 is connected to one end of the fifth resistor R5 and one end of the ninth resistor R9, the other end of the ninth resistor R9 is grounded, and the other end of the ninth resistor R9 relative to the ground is connected to the plasma energy output module as a bus sampling input terminal, and the reverse input terminal of the first amplifier V1 is connected to one end of the sixth resistor R6 and one end of the third capacitor C3 at the same time. The first amplifier V1 is connected to the reverse input terminal through the first sliding potentiometer RW1, and the sliding tap of the first sliding potentiometer RW1 is connected to the output terminal of the first amplifier V1. The output terminal of the first amplifier V1 is also connected to one end of the seventh resistor R7. The other end of the seventh resistor R7 serves as the output terminal of the energy control module and is connected to one end of the fourth capacitor C4 and one end of the eighth resistor R8. The other end of the fourth capacitor C4 and the other end of the eighth resistor R8 are grounded at the same time.

[0065] It should be noted here that, in the above-mentioned peak power control circuit, the ninth resistor R9 constitutes a bus sampling unit, the first capacitor C1, the second capacitor C2 and the fifth resistor R5 constitute an input filtering unit, the third capacitor C3, the sixth resistor R6, the first amplifier V1 and the first sliding potentiometer RW1 constitute an amplification factor adjustment unit, and the seventh resistor R7, the eighth resistor R8 and the fourth capacitor C4 constitute an output unit.

[0066] like Figure 4 As shown, when the present embodiment is implemented, the plasma energy output module includes a full-bridge inverter and boost circuit, the full-bridge inverter and boost circuit includes a full-bridge inverter circuit and a boost transformer connected to each other, the bus sampling input end of the peak power control circuit can be connected to the bridge arm bus in the full-bridge inverter circuit, and because the sampling current is relatively small or there is interference, it can be filtered and amplified in turn through the filtering unit and the amplification factor adjustment unit in the peak power control circuit, and finally a voltage signal is generated and sent to the single-chip microcomputer through the output unit.

[0067] Preferably, the switching circuit also includes a short-circuit detection circuit, and the short-circuit detection circuit is a parallel short-circuit detection circuit: it is used to perform parallel (dynamic) sampling, isolation transformation, rectification and filtering, and comparison with the adjusted reference voltage on the voltage after the full-bridge inverter and boost circuit are boosted, and then send the obtained short-circuit detection signal to the single-chip microcomputer in the switching circuit; when the single-chip microcomputer determines that there is a short circuit according to the short-circuit detection signal, it controls the switch module in the switching circuit to disconnect.

[0068] Specifically, the parallel short-circuit detection circuit includes:

[0069] The parallel sampling unit is used to perform parallel sampling on the boost output end of the full-bridge inverter and boost circuit in the plasma energy output module, and send the sampled voltage to the next stage;

[0070] The Hall voltage sensor is used to receive the sampled voltage sent by the parallel sampling unit and perform isolation processing, and then send the obtained sampled voltage to the next stage;

[0071] The rectification and filtering unit is used to receive the sampled voltage sent by the Hall voltage sensor and perform rectification and filtering, and then send the obtained sampled voltage to the next stage;

[0072] The comparison unit is used to receive the sampled voltage sent by the rectification and filtering unit and compare it with the adjusted reference voltage (adjustable), and then send the generated short-circuit detection signal to the switch circuit for short-circuit judgment and on-off action.

[0073] like Figure 7As shown, the parallel short circuit detection circuit provided in this embodiment may include a Hall voltage sensor T3, a first comparator A1, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a sixth capacitor C6, a tenth diode D10, an eleventh diode D11, a second sliding potentiometer RW2 and a second external power supply U2, wherein:

[0074] The two ends of the primary side of the Hall voltage sensor T3 are respectively connected to one end of the tenth resistor R10 and one end of the eleventh resistor R11, and the other end of the tenth resistor R10 and the other end of the eleventh resistor R11 are respectively connected to the plasma energy output module as the two ends of the input end of the parallel short-circuit detection circuit, and the two ends of the secondary side of the Hall voltage sensor T3 are respectively connected to the positive electrode of the tenth diode D10 and the positive electrode of the eleventh diode D11, and the secondary side of the Hall voltage sensor T3 is connected to the second external power supply, and the cathode of the tenth diode D10 is also connected to the cathode of the eleventh diode D11. The cathode of the first comparator A1, one end of the twelfth resistor R12, one end of the sixth capacitor C6 and the positive input end of the first comparator A1 are connected, the anode of the eleventh diode D11, the other end of the twelfth resistor R12 and the other end of the sixth capacitor C6 are grounded at the same time, the reverse input end of the first comparator A1 is connected to the sliding tap of the second sliding potentiometer RW2, one end of the resistance of the second sliding potentiometer RW2 is connected to the second external power supply U2, the other end of the resistance of the second sliding potentiometer RW2 is grounded, and the output end of the first comparator A1 is connected to the single-chip microcomputer as the output end of the parallel short-circuit detection circuit.

[0075] It should be noted here that the tenth resistor R10 and the eleventh resistor R11 together constitute a parallel sampling unit, the tenth diode D10, the eleventh diode D11, the twelfth resistor R12 and the sixth capacitor C6 together constitute a rectification and filtering unit, and the first comparator A1 and the second sliding potentiometer RW2 together constitute a comparison unit. In specific work, the voltage at the reverse input terminal of the first comparator A1 is used as a reference voltage, and the reference voltage can be changed by adjusting the sliding tap of the second sliding potentiometer RW2. The positive input terminal of the first comparator A1 is an input voltage related to the short-circuit detection signal.

[0076] During specific operation, the Hall voltage sensor T3 receives a sampled voltage signal. When the voltage is lower than the set value, it is input to the non-inverting end of the first comparator A1 after rectification and filtering, and the first comparator A1 outputs a low level. When the voltage is higher than the set value, it is input to the non-inverting end of the first comparator A1 after rectification and filtering, and the first comparator A1 outputs a high level.

[0077] If the voltage at the same-direction input terminal of the first comparator A1 is used as the reference voltage, when the voltage is higher than the set value, it is input to the inverting terminal of the first comparator A1 after rectification and filtering, and the first comparator A1 outputs a low level; when the voltage is lower than the set value, it is input to the inverting terminal of the first comparator A1 after rectification and filtering, and the first comparator A1 outputs a high level. In this embodiment, the first external power supply U1 can be 12V (regulated power supply), and the second external power supply U2 can be 5V (regulated power supply).

[0078] Preferably, the switch circuit provided in this embodiment may also adopt a relay type switch module, such as Figure 6 As shown, the relay type switch module includes a relay K, a transistor Q20 and a diode D20, wherein the emitter of the transistor Q20 is grounded and connected to the positive electrode of the diode D20, the negative electrode of the diode D20 is connected to the collector of the transistor Q20, the base of the transistor Q20 is connected to the single-chip microcomputer through a resistor R30, the collector of the transistor Q20 is also connected to one end of the coil of the relay K, and the other end of the coil of the relay K can be connected to a 12V external power supply, wherein the two ends of the switch contact of the relay K are respectively connected in series in the system circuit as the input end and the output end of the relay type switch module.

[0079] Example 2

[0080] like Figure 5 As shown, this embodiment provides a plasma energy control system, including an AC / DC module, a DC control module, a plasma energy output module and a control panel, and also includes the switching circuit provided in Example 1, and the switching circuit is connected in series between the DC control module and the plasma energy output module through the internal switching module.

[0081] It should be noted here that, in this embodiment, since a switch circuit is added between the DC control module and the plasma energy output module, the power output by the plasma energy output module can be controlled by controlling the switch circuit (working cycle variable) so that the power output by the plasma energy output module does not exceed the preset peak power and satisfies the preset power curve, so that the output power of the plasma energy control system is always kept within a certain range, and the problems of weak instantaneous energy excitation output by the plasma energy control system, difficulty in exciting plasma, difficulty in continuous plasma generation, low cutting efficiency, and the occurrence of knife sticking and blunt cutting by the scalpel are solved.

[0082] The plasma energy output module includes a full-bridge inverter and boost circuit, an impedance matching and output circuit, and a second drive control circuit, wherein:

[0083] The second drive control circuit is used to drive the full-bridge inverter and boost circuit (specifically, drive the gate of its VMOS tube) after being isolated;

[0084] The full-bridge inverter and boost circuit is used to invert and boost the voltage output by the switch circuit, and then output it to the impedance matching and output circuit;

[0085] The impedance matching and output circuit is used to perform impedance matching on the voltage input by the full-bridge inverter and boost circuit and output it to the control panel.

[0086] Preferably, specifically, the peak power control circuit samples the bus current of the bridge arm bus of the full-bridge inverter and boost circuit through a sampling resistor.

[0087] To better illustrate this embodiment, the AC / DC module in this embodiment may include an AC input filter circuit, a high-voltage rectifier filter circuit, and a low-voltage output circuit, wherein:

[0088] The AC input filter circuit is used to filter the input AC power and then output the filtered AC power to the high-voltage rectifier filter circuit;

[0089] The high-voltage rectifying and filtering circuit is used to rectify and filter the alternating current input by the alternating current input filtering circuit to obtain high-voltage direct current, and then output the high-voltage direct current to the low-voltage output circuit and the DC control module;

[0090] The low-voltage output circuit is used to isolate and reduce the high-voltage direct current input by the high-voltage rectifier and filter circuit to obtain low-voltage direct current, and then output the low-voltage direct current to the DC control module, the switch circuit, the plasma energy output module and the control panel.

[0091] The DC control module in this embodiment may include a soft-switching full-bridge inverter and buck circuit, a rectifier filter output circuit and a first drive control circuit, wherein;

[0092] The first drive control circuit: after being isolated, is used to drive the full-bridge inverter and buck circuit. Here, the first drive control circuit drives the gate of the VMOS tube in the soft-switching full-bridge inverter and buck circuit, and can make the DC control module output different voltages according to different types of blades;

[0093] The soft-switch full-bridge inverter and buck circuit is used to invert and buck the high-voltage direct current output by the AC / DC control module, and then output the resulting voltage to the rectifier and filter output circuit;

[0094] The rectification and filtering output circuit is used to rectify and filter the voltage output by the soft-switching full-bridge inverter and buck circuit, and then output the rectified and filtered voltage to the switching circuit.

[0095] It should be noted here that only under abnormal circumstances, such as insufficient insulation of the blade or even a short circuit, when the parallel short circuit detection circuit detects a short circuit, the microcontroller-controlled switch module of the switch circuit is disconnected.

[0096] In this embodiment, the control panel may include an external interface, an identification control module, an alarm circuit and a human-computer interaction module, wherein:

[0097] The identification control module is used to identify and process the surgical blade head information and foot switch information connected to the external interface, generate a first control signal, and then send the first control signal to the DC control module and the plasma energy output module at the same time; it is also used to receive and process the short-circuit signal sent by the switch module, generate an alarm signal, and then send the alarm signal to the alarm circuit; it is also used to receive and process the operator signal sent by the human-computer interaction module, generate a second control signal, and then send the second control signal to the DC control module and the plasma energy output module at the same time (i.e., the process of the operator manually selecting the gear position);

[0098] The alarm circuit is used to receive the alarm signal sent by the identification control module and give an alarm, and at the same time send the alarm signal to the human-computer interaction module for display;

[0099] The human-machine interaction module is used to receive and display the signals sent by the identification control module and the alarm circuit, and is also used to provide a human-machine interface for the operator and send the relevant signals input by the operator to the identification control module.

[0100] It should be noted here that in the present embodiment, the interface of the external device (such as a foot switch, a surgical knife head, etc.), the external device, the display / touch screen of the control panel itself, etc. are all isolated from the plasma energy control system provided in the present embodiment through an isolation circuit. When the parallel short-circuit detection circuit performs short-circuit detection on the full-bridge inverter and boost circuit and determines that it is short-circuited, the single-chip microcomputer will send a short-circuit signal to the identification control module while controlling the switch module to disconnect. After the identification control module identifies the short-circuit signal, it controls the alarm circuit to alarm. The alarm circuit can include various alarm forms such as sound alarm, sound and light alarm, and the human-computer interaction module can include a touch screen interaction mode or an ordinary button display interaction module.

[0101] It should be noted here that the switch module is provided with an input end, an output end and a switch control input end, and the input end and the output end of the switch module are respectively connected to the output end of the DC control module and the input end of the plasma energy output module, that is, the switch module is connected in series in the plasma energy control system, and the switch control input end of the switch module is connected to the single-chip microcomputer to receive the switch control signal sent by the single-chip microcomputer. The switch module performs a disconnection or closing action according to the switch control signal. When the switch module is disconnected, the plasma energy output module is disconnected, and when the switch module is closed, the plasma energy output module is closed. In other words, the working cycle of the switch module is also the working cycle of the plasma energy control system. The voltage signal generated by the peak power control circuit is mainly used to control the working cycle of the switch module through the single-chip microcomputer, and to make the power peak output of the plasma energy control system not exceed the preset power peak and meet the preset power curve. Wherein, as needed, the preset peak power and the preset power curve can be preset in the peak power control circuit and the single-chip microcomputer in advance.

[0102] When the present embodiment is specifically implemented, the output voltage of the DC control module has different gears, such as 10 gears, each gear corresponds to a different voltage, the highest gear 10 corresponds to 65V, and the remaining gears decrease in sequence with the highest gear. The output end of the plasma energy output module is the output end of the plasma energy control system (the plasma energy control system includes a control panel, and the control panel is provided with an external interface that can be connected to a surgical blade and a foot switch. The output end of the plasma energy control system provides plasma output energy to the surgical blade through the external interface of the control panel). The output end of the plasma energy output module can be connected to surgical blades of different models through the external interface of the control panel. The models of surgical blades connected to the output end of the plasma energy control system are different, and the energy required by the surgical blades is also different. Accordingly, the peak power and power curve that the power output of the plasma energy control system needs to meet are different. The peak power and power curve corresponding to different types of surgical blades can be set by the operator according to actual needs. For example, when using blade A, the peak power is set to 300W, and the output power of the plasma energy control system needs to meet the power curve A. The peak power control circuit obtains the sampled current in real time, amplifies it, generates a voltage signal, and sends it to the microcontroller (what is actually measured is the real-time impedance between the two poles of the blade). The microcontroller can calculate the corresponding working cycle of the switch module when the peak power of 300W and the power curve A are met based on the received voltage signal (that is, different voltage signals here correspond to different preset peak powers and preset power curves), thereby generating a switch control signal to control the switch module to open or close. For the same type of blade, if 200 ohms is preset as the peak power point, then when the measured impedance is greater than 200 ohms, the working cycle of the single-chip microcomputer-controlled switch module is about 500ms (wherein the disconnection time is about 110ms), and when the measured impedance is 50 ohms, in order to adapt to the preset power curve, the working cycle of the single-chip microcomputer-controlled switch module is about 140ms (wherein the disconnection time is about 110ms), so that the output power of the plasma energy control system is always controlled within the required range. Compared with the prior art, in this technical solution, the working cycle consists of disconnection time and working time, and when the preset peak power remains unchanged (that is, when the gear is not changed), the disconnection time remains unchanged) When the measured impedance is lower than the excitation impedance value of the plasma (plasma requires a certain excitation impedance and a corresponding excitation voltage to be excited, and when working, the voltage can generally meet the requirements of the excitation voltage), the working cycle becomes shorter (that is, the working time becomes shorter, that is, only the length of its working time is adjusted), the switch module is disconnected, and the switch circuit is charged and stored through the DC control module.This technical solution can adjust the working cycle of the switch module according to the preset peak power and the preset power curve. When the impedance is lower than the excitation impedance value of the plasma, the switch circuit is disconnected to store energy. Within a certain range, the working cycle is short and the burst energy is very strong (i.e., the instantaneous power becomes larger), which can effectively avoid problems such as weak instantaneous energy excitation and not easy to generate plasma. During the operation using the surgical system of this embodiment, when tissue is attached to the surgical blade, that is, the blade sticking phenomenon occurs, the blade impedance changes. If the blade sticking problem is not solved, it will seriously affect the surgical effect. In this embodiment, since the switch circuit is disconnected to store energy, the instantaneous excitation energy time is short, and the plasma generated by the instantaneous energy can be used to knock off the tissue attached to the blade, quickly solving the problem of blade sticking. In addition, since this embodiment can continuously output plasma energy, it has the advantages of fast cutting and high efficiency.

[0103] In addition, when implementing this embodiment, the process of the operator manually selecting the gear is as follows: After the operator selects the working mode, such as cutting, hemostasis, etc., through the foot switch, each working mode (each has multiple energy gears, such as 10 gears) is manually selected through the human-computer interaction module, and the energy gear can be adjusted. The recognition control module is preset with a corresponding default gear according to different models of blade heads, which is generally the best gear. The operator can select the required gear through the human-computer interaction module as needed, input the gear selection signal to the recognition control module, and select the working state of the working mode through the foot switch (such as selecting cutting or hemostasis on or off). If the cutting mode is selected, the foot switch sends a switch signal to the identification control module through the external interface (the hemostasis switch provides a switch signal to the identification control module through another channel). After the identification control module identifies the switch signal, it controls the first drive control circuit in the DC control module and the second drive control module in the plasma energy output module (that is, the first drive control circuit and the second drive control module are turned on at the same time, and the switch module in the switch circuit is turned on only after the DC control module fully charges it. Although there is a sequence in time, the opening time difference between the switch module and the first two is in milliseconds, which is equivalent to turning on the first drive control circuit, the second drive control module and the switch module at the same time).

[0104] On the one hand, the identification control module outputs the corresponding control voltage to the first drive control circuit according to the preset different energy gears. After isolation, the first drive control circuit drives the soft switch full-bridge inverter and buck circuit (the gate of the input VMOS tube). After the voltage is stepped down, it is input to the rectifier filter output circuit output to control the output voltage of the corresponding gear of the DC control module (as the input voltage of the switch circuit). The operator can also select the corresponding gear according to the human-computer interaction module to manually adjust the preset gear, and then adjust the output voltage of the corresponding gear of the DC control module through the above-mentioned work flow.

[0105] On the other hand, after the identification control module receives the switch signal of the foot switch, it turns on the second drive control circuit, which is isolated and used to drive the full-bridge inverter and boost circuit (input to Figure 4 The voltage is input into the impedance matching and output circuit after being boosted to control the energy output of the plasma energy output module. The parallel short-circuit detection circuit performs parallel voltage sampling and processing on the voltage boosted by the full-bridge inverter and boost circuit to generate a short-circuit detection signal, and then sends the short-circuit detection signal to the single-chip microcomputer in the switch circuit. The single-chip microcomputer controls the switch module in the switch circuit to open or close according to the short-circuit detection signal. In normal operation, the first drive control circuit and the second drive control circuit are both turned on, and are only turned off in abnormal operation (such as when the blade is judged to be short-circuited, or the foot switch is turned off).

[0106] The above are only preferred embodiments of the present invention. It should be noted that the above preferred embodiments should not be regarded as limiting the present invention, and the protection scope of the present invention should be based on the scope defined by the claims. For ordinary technicians in this technical field, several improvements and modifications can be made without departing from the spirit and scope of the present invention, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A plasma energy control switch circuit, characterized in that: It includes a peak power control circuit, a single chip microcomputer and a switch module connected in series in a plasma energy control system circuit, wherein: The peak power control circuit is used to dynamically sample and filter the current of the subsequent circuit of the switch module, and adjust the amplification factor of the generated voltage signal to adjust the peak power point, and then send it to the single chip microcomputer; The single chip microcomputer is used to process the received voltage signal and control the working cycle of the switch module, specifically, the voltage signal is processed when it is greater than the threshold, and is not processed when it is less than or equal to the set threshold, that is, the switch module is always open, so that the output power of the plasma energy control system does not exceed the preset peak power and meets the preset power curve; The working cycle of the switch module consists of an off time and an on time, and when the preset peak power remains unchanged, the off time remains unchanged; The plasma energy control switch circuit is connected in series between the DC control module and the plasma energy output module through the switch module inside the circuit.

2. A plasma energy control switch circuit according to claim 1, characterized in that: The switch module includes a VMOS switch module or a relay switch module.

3. A plasma energy control switch circuit according to claim 2, characterized in that: The VMOS switch module includes a PMOS switch module or an NMOS switch module.

4. A plasma energy control switch circuit according to claim 3, characterized in that: The VMOS switch module comprises an anti-interference unit, an amplifying switch unit, a driving switch unit and a switch unit connected in series in a plasma energy control system circuit, wherein: The anti-interference unit is used to receive the switch control signal sent by the single chip microcomputer, perform anti-interference processing, and then send it to the amplifying switch unit; The amplifying switch unit is used to receive and amplify the switch control signal sent by the anti-interference unit, and then send it to the driving switch unit; The driving switch unit is used to receive the switch control signal sent by the amplifying switch unit and then perform switching actions; The switch unit is used to maintain the same on-off action as the driving switch unit.

5. The plasma energy control switch circuit according to claim 1, characterized in that: In the peak power control circuit, the amplification factors are different for different types of cutter heads; for the same type of cutter head, the amplification factor after each sampling and filtering is constant.

6. The plasma energy control switch circuit according to claim 1, characterized in that: The peak power control circuit includes a bus sampling unit, an input filtering unit, an amplification factor adjustment unit and an output unit, wherein: The bus sampling unit is used to dynamically sample the current of the subsequent circuit of the switch module and send the sampling signal to the input filter unit; The input filtering unit is used to receive the sampling signal sent by the bus sampling unit and perform filtering processing to generate a voltage signal, and then send the voltage signal to the amplification factor adjustment unit; The amplification factor adjustment unit is used to receive the voltage signal, and perform amplification factor adjustment to adjust the peak power point, and then send the voltage signal after the amplification factor adjustment to the output unit; The output unit is used to receive the voltage signal sent by the amplification factor adjustment unit and send it to the single chip microcomputer.

7. The plasma energy control switch circuit according to claim 1, characterized in that: A short circuit detection circuit is also included.

8. The plasma energy control switch circuit according to claim 7, characterized in that: The short-circuit detection circuit is a parallel short-circuit detection circuit, comprising A parallel sampling unit: used for sampling the subsequent circuit of the switch module in parallel and sending the sampled voltage to the next circuit; Hall voltage sensor: used for receiving the sampling voltage sent by the parallel sampling unit and performing isolation processing, and then sending the obtained sampling voltage to the next stage; Rectification and filtering unit: used for receiving the sampled voltage sent by the Hall voltage sensor and performing rectification and filtering, and then sending the obtained sampled voltage to the next stage; Comparison unit: used for receiving the sampled voltage sent by the rectification and filtering unit and comparing it with the adjusted reference voltage, and then sending the generated short-circuit detection signal to the single-chip microcomputer for short-circuit judgment and on-off action.

9. A plasma energy control system, comprising an AC / DC module, a DC control module, a plasma energy output module and a control panel, characterized in that: It also includes the switch circuit according to any one of claims 1 to 8, wherein the switch circuit is connected in series between the DC control module and the plasma energy output module through the switch module inside the switch circuit.

Images