Semiconductor device and semiconductor module

Abstract

The present invention relates to a semiconductor device and a semiconductor module. An object of the present invention is to provide a semiconductor device that improves heat dissipation by improving contact with a heat dissipation component. The semiconductor device includes a base plate, a semiconductor chip, a housing, a heat dissipation component, and a plurality of mounting portions. The semiconductor chip is held on the surface side of the base plate. The housing is arranged on the surface of the base plate in a manner that the semiconductor chip is accommodated inside. The heat dissipation component is arranged on the back side of the base plate and can contact a heat sink for cooling the semiconductor chip. The plurality of mounting portions have the function of mounting the housing on the heat sink. When viewed from above, the end of the heat dissipation component in the extension direction of the long side of the plurality of sides that constitute a shape determined by connecting the positions of the plurality of mounting portions is located between two mounting portions that constitute the long side.

Description

Technical Field

[0001] The present invention relates to a semiconductor device and a semiconductor module. Background Art

[0002] As a structure for dissipating heat generated inside a semiconductor device, a structure is known in which a heat sink is provided between a base plate of the semiconductor device and a heat sink, and the semiconductor device and the heat sink are fixed by screws. In this structure, the contact between the base plate and the heat sink, or the contact between the heat sink and the heat sink affects the heat dissipation.

[0003] Patent Document 1 proposes a module structure including a ceramic circuit substrate having a cutout portion and a module cover for pressing the ceramic circuit substrate.

[0004] Patent Document 1: Japanese Patent No. 3669980

[0005] In a structure in which a heat dissipation component is disposed between a base plate of a semiconductor device and a heat sink, and the semiconductor device and the heat sink are fastened by screws, the base plate receives a reaction force from the heat sink. When the base plate is bent into a concave shape due to the reaction force, the surface pressure of the central portion of the base plate decreases. Therefore, the contact between the semiconductor device and the heat dissipation component, or the contact between the heat dissipation component and the heat sink deteriorates. When the semiconductor device is operating, there is a tendency for heat to concentrate in the central portion of the base plate, so when the contact of the central portion is insufficient, the heat dissipation of the semiconductor device decreases. Summary of the invention

[0006] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a semiconductor device having improved heat dissipation to a heat sink via a heat dissipation member.

[0007] The semiconductor device of the present invention comprises a base plate, a semiconductor chip, a housing, a heat dissipation component and a plurality of mounting parts. The semiconductor chip is held on the surface side of the base plate. The housing is arranged on the surface of the base plate in such a manner as to accommodate the semiconductor chip inside. The heat dissipation component is arranged on the back side of the base plate and can be in contact with a heat sink for cooling the semiconductor chip. The plurality of mounting parts have the function of mounting the housing on the heat sink. When viewed from above, the end of the heat dissipation component in the extension direction of the long side of the plurality of sides constituting a shape determined by connecting the positions of the plurality of mounting parts is located between the two mounting parts constituting the long side.

[0008] Effects of the Invention

[0009] According to the present invention, it is possible to provide a semiconductor device in which heat dissipation to a heat sink via a heat dissipation member is improved.

[0010] The objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 This is a cross-sectional view showing the structure of the semiconductor device in the first embodiment.

[0012] Figure 2 It is a cross-sectional view showing the structure of the casing and the base plate in the first embodiment.

[0013] Figure 3 It is a bottom view showing the structure of the base plate in Embodiment 1.

[0014] Figure 4 It is a cross-sectional view showing the structure of the heat sink in the first embodiment.

[0015] Figure 5 It is a bottom view showing the structure of the heat sink in the first embodiment.

[0016] Figure 6 This is a cross-sectional view showing the structure of the semiconductor module in the first embodiment.

[0017] Figure 7 This is a diagram schematically showing the manufacturing process of the semiconductor module in the first embodiment.

[0018] Figure 8 This is a diagram schematically showing the manufacturing process of the semiconductor module in the first embodiment.

[0019] Fig. 9 This is a diagram schematically showing the manufacturing process of the semiconductor module in the first embodiment.

[0020] Fig.10 It is a cross-sectional view showing the structure of a casing and a base plate of a comparative structure in the first embodiment.

[0021] Fig.11 This is a bottom view showing the structure of a base plate of a comparative structure in the first embodiment.

[0022] Fig.12 This is a cross-sectional view showing the structure of a heat sink having a comparative structure in the first embodiment.

[0023] Fig.13 It is a bottom view showing the structure of a heat sink of a comparative structure in Embodiment 1.

[0024] Fig.14 This is a diagram schematically showing a process of mounting the semiconductor device having a comparative structure on a heat sink in the first embodiment.

[0025] Fig.15This is a diagram schematically showing a process of mounting the semiconductor device having a comparative structure on a heat sink in the first embodiment.

[0026] Fig.16 This is a diagram schematically showing a process of mounting the semiconductor device having a comparative structure on a heat sink in the first embodiment.

[0027] Fig.17 This is a diagram schematically showing a manufacturing process of a semiconductor module in a modified example of the first embodiment.

[0028] Fig.18 It is a cross-sectional view showing the structure of a semiconductor module in the second embodiment.

[0029] Fig.19 It is a cross-sectional view showing the structure of a housing and a base plate of a semiconductor device in the second embodiment.

[0030] Fig. 20 It is a bottom view showing the structure of a housing and a base plate of the semiconductor device in the second embodiment.

[0031] Fig.21 It is a cross-sectional view showing the structure of a heat sink in the second embodiment.

[0032] Fig. 22 It is a bottom view showing the structure of the heat sink in the second embodiment.

[0033] Fig.23 This is a diagram schematically showing a manufacturing process of a semiconductor module in the second embodiment.

[0034] Fig.24 This is a diagram schematically showing a manufacturing process of a semiconductor module in the second embodiment.

[0035] Fig.25 This is a diagram schematically showing a manufacturing process of a semiconductor module in the second embodiment.

[0036] Fig.26 It is a cross-sectional view showing the structure of a casing and a base plate of a comparative structure in the second embodiment.

[0037] Fig. 27 It is a bottom view showing the structure of a housing and a base plate of a comparative structure in the second embodiment.

[0038] Fig.28 This is a cross-sectional view showing the structure of a heat sink having a comparative structure in the second embodiment.

[0039] Fig.29 It is a bottom view showing the structure of a heat sink of a comparative structure in the second embodiment.

[0040] Fig.30 This is a diagram schematically showing a process of mounting a semiconductor device having a comparative structure on a heat sink in the second embodiment.

[0041] Fig.31 This is a diagram schematically showing a process of mounting a semiconductor device having a comparative structure on a heat sink in the second embodiment.

[0042] Fig.32 This is a diagram schematically showing a process of mounting a semiconductor device having a comparative structure on a heat sink in the second embodiment.

[0043] Fig.33 It is a plan view showing the structure of a heat sink in the fourth embodiment.

[0044] Fig.34 It is a cross-sectional view showing the structure of a semiconductor device in Embodiment 5.

[0045] Fig.35 It is a bottom view showing the structure of a base plate in the fifth embodiment.

[0046] Fig.36 It is a cross-sectional view showing the structure of a heat sink in the fifth embodiment.

[0047] Fig.37 It is a bottom view showing the structure of the heat sink in the fifth embodiment.

[0048] Fig.38 It is a plan view showing the structure of a semiconductor module in the sixth embodiment.

[0049] Fig.39 It is a cross-sectional view showing the structure of a semiconductor module in the sixth embodiment.

[0050] Fig.40 It is a plan view showing the structure of a semiconductor module in the seventh embodiment.

[0051] Fig.41 It is a plan view showing the structure of a heat sink in the seventh embodiment.

[0052] Fig.42 It is a cross-sectional view showing the structure of a semiconductor module in the seventh embodiment.

[0053] Fig.43 It is a plan view showing the structure of a semiconductor module in the eighth embodiment.

[0054] Fig.44 It is a plan view showing the structure of a heat sink and a heat sink in the eighth embodiment.

[0055] Fig.45 It is a plan view showing the structure of a semiconductor module in a modified example of the eighth embodiment.

[0056] Fig.46 It is a plan view showing the structure of a semiconductor module in the ninth embodiment.

[0057] Fig.47 It is a cross-sectional view showing the structure of a semiconductor module in the ninth embodiment.

[0058] Fig.48 It is a plan view showing the structure of a heat sink in the tenth embodiment.

[0059] Fig.49 It is a cross-sectional view showing the structure of a heat sink in the tenth embodiment.

[0060] Description of the label

[0061] 1 base plate, 2 insulating substrate, 3 semiconductor chip, 4 housing, 5 electrode terminal, 6 packaging material, 8 mounting portion, 9 heat dissipation component, 9A heat sink, 9B end, 9C end, 9D end, 9E end, 10 heat sink, 10A screw hole, 10B screw, 13 adhesive material, 15 pressing plate, 15A pressing plate, 81 first through hole, 82 second through hole, 100 semiconductor device, 101 semiconductor device, 102 semiconductor device, 105 semiconductor device, 106 semiconductor device, 107 semiconductor device, 200 semiconductor module, 201 semiconductor module, 202 semiconductor module, 206 semiconductor module, 207 semiconductor module, 208 semiconductor module, 208A semiconductor module, 209 semiconductor module, Fa axial force, Fr reaction force, L1 reaction force distance, L2 reaction force distance, L3 reaction force distance, L4 reaction force distance. DETAILED DESCRIPTION

[0062] <Implementation method 1>

[0063] Figure 1 It is a cross-sectional view showing the structure of the semiconductor device 100 in the first embodiment.

[0064] The semiconductor device 100 includes a base plate 1 , an insulating substrate 2 , a semiconductor chip 3 , a case 4 , electrode terminals 5 , a sealing material 6 , a cover 7 , a heat dissipating member 9 , and a plurality of mounting portions 8 . Figure 2 2 is a cross-sectional view showing the structure of the housing 4 and the base plate 1 in the first embodiment. Figure 2 In the figure, the internal structure of the housing 4 is omitted. Figure 3 It is a bottom view showing the structure of the base plate 1 in the first embodiment.

[0065] The base plate 1 constitutes the bottom of the semiconductor device 100. The base plate 1 in the first embodiment has a rectangular planar shape. A first through hole 81 constituting a mounting portion 8 described later is provided on the outer periphery of the base plate 1.

[0066] The insulating substrate 2 is bonded to the surface of the base plate 1 via the solder 11. The insulating substrate 2 includes an insulating layer 2A made of resin or ceramic and a circuit pattern 2B provided on the surface of the insulating layer 2A.

[0067] The semiconductor chip 3 is bonded to the circuit pattern 2B of the insulating substrate 2 via the solder 12. That is, the semiconductor chip 3 is held on the surface side of the base plate 1. In the first embodiment, two semiconductor chips 3 are arranged in parallel on the circuit pattern 2B. The semiconductor chip 3 is formed of, for example, a semiconductor such as Si or a so-called wide bandgap semiconductor such as SiC, GaN, etc. The semiconductor chip 3 is, for example, a semiconductor chip for power (power semiconductor chip), a control IC (Integrated Circuit) for controlling the power semiconductor chip, etc. The semiconductor chip 3 is, for example, an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), a Schottky barrier diode, etc.

[0068] The housing 4 is in a frame shape. The housing 4 is provided on the surface of the base plate 1 in such a manner that the semiconductor chip 3 is accommodated inside the frame shape. The housing 4 is bonded to the base plate 1 via an adhesive material 13. In the first embodiment, the outer shape of the housing 4 when viewed from above is a rectangle. In addition, the size of the back side of the housing 4 is the same as that of the base plate 1. A second through hole 82 constituting the mounting portion 8 described later is provided on the outer periphery of the housing 4. The second through hole 82 is formed, for example, by a bushing buried in the housing 4.

[0069] The electrode terminal 5 is formed, for example, as a component embedded in the housing 4 and integrated with the housing 4. One end of the electrode terminal 5 is connected to the semiconductor chip 3 through an internal wiring such as a wire 14. The other end of the electrode terminal 5 is provided so as to be connectable to an external circuit. Figure 1 , only a portion of the internal wiring between the electrode terminal 5 and the semiconductor chip 3 is shown.

[0070] The sealing material 6 is filled inside the frame shape of the case 4 to seal the insulating substrate 2 and the semiconductor chip 3. The sealing material 6 is made of an insulating material. A cover 7 is placed on the sealing material 6.

[0071] The plurality of mounting portions 8 are provided for mounting the housing 4 on the heat sink. In other words, the mounting portion 8 has the function of fixing the semiconductor device 100 to the heat sink. The mounting portion 8 in the first embodiment includes a first through hole 81 provided in the base plate 1 and a second through hole 82 provided in the housing 4. The mounting portion 8 is provided at the four corners (four corners) of the base plate 1 and the housing 4 when viewed from above. The first through hole 81 and the second through hole 82 are penetrated by screws described later.

[0072] The heat dissipation member 9 is provided on the back surface of the base plate 1. The heat dissipation member 9 is provided so as to be in contact with the heat sink when the semiconductor device 100 is fixed to the heat sink. The heat dissipation member 9 in the first embodiment is a heat sink 9A. Figure 4 and Figure 5 1 and 2 are a cross-sectional view and a bottom view showing the structure of the heat sink 9A in the first embodiment. Figure 4 and Figure 5 In FIG. 1 , the shape of the base plate 1 is shown by a dotted line.

[0073] The mounting portions 8 are provided at the four corners of the housing 4, so that the shape determined by connecting the positions of the four mounting portions 8 in a plan view is a rectangle. The direction in which the long side of the four sides constituting the rectangle determined by the positions of the mounting portions 8 extends is Figure 1 The middle is the lateral direction (left-right direction). The end portions 9B and 9C of the heat sink 9A in the extending direction of the long side are located between the two mounting portions 8 constituting the long side. In other words, the heat sink 9A is provided inside the two mounting portions 8 constituting the long side.

[0074] Figure 6 2 is a cross-sectional view showing the structure of the semiconductor module 200 in the first embodiment. Figure 6 In the figure, the internal structure of the housing 4 is omitted. The semiconductor module 200 includes a semiconductor device 100 , a heat sink 10 , and a plurality of fixing portions 80 .

[0075] The heat sink 10 is in contact with the back surface of the base plate 1 via the heat sink 9A. The heat sink 10 has a function of cooling the semiconductor chip 3 when the semiconductor device 100 is driven. In the heat sink 10 of the first embodiment, screw holes 10A are provided corresponding to the positions of the mounting portions 8 of the semiconductor device 100.

[0076] The fixing portion 80 includes: a mounting portion 8 including a first through hole 81 and a second through hole 82; a screw 10B that penetrates the mounting portion 8; and a screw hole 10A of the heat sink 10. The screw 10B and the screw hole 10A are fastened to each other. Thus, the fixing portion 80 applies stress to the housing 4 in the direction where the heat sink 10 is provided, and fixes the housing 4 to the heat sink 10.

[0077] Figures 7 to 91 is a diagram schematically showing a manufacturing process of the semiconductor module 200 in the first embodiment. First, the semiconductor device 100 is placed at a predetermined position on the heat sink 10. Specifically, the mounting portion 8 of the semiconductor device 100 is aligned with the screw hole 10A of the heat sink 10 ( Figure 7 The screw 10B penetrating the left mounting portion 8 and the screw hole 10A of the heat sink 10 are fastened to each other ( Figure 8 ). As a result, an axial force Fa is generated in the direction from the housing 4 to the heat sink 10, and a reaction force Fr is generated in the direction from the heat sink 10 to the housing 4. The axial force Fa is generated at the left mounting portion 8. The reaction force Fr is transmitted to the base plate 1 via the heat sink 9A in contact with the heat sink 10, and is thus generated at the end 9B of the heat sink 9A close to the left mounting portion 8. In addition, the screw 10B penetrating the right mounting portion 8 and the screw hole 10A are tightened to each other ( Fig. 9 As a result, an axial force Fa is generated at the right mounting portion 8, and a reaction force Fr is generated at the end 9C of the heat sink 9A close to the right mounting portion 8. When the distance between the positions where the reaction force Fr is generated is defined as the reaction force distance, Figure 5 As shown, the reaction force distance L1 in the first embodiment corresponds to the diagonal distance of the heat sink 9A.

[0078] Next, a structure will be described in which ends 9B and 9C of heat sink 9A in the direction of the long side of the rectangle determined by connecting the positions of four mounting portions 8 are located outside two mounting portions 8 constituting the long side. This structure is referred to as a comparative structure. Fig.10 1 is a cross-sectional view showing the structure of a housing 94 and a base plate 91 of a comparative structure in Embodiment 1. Fig.10 In the figure, the internal structure of the shell 94 is omitted. Fig.11 This is a bottom view showing the structure of a base plate 91 of a comparative structure in the first embodiment. Fig.12 and Fig.13 The sectional view and bottom view respectively show the structure of heat sink 99A of the comparative structure in Embodiment 1. Heat sink 99A has the same shape as the back surface of case 94 and base plate 91 , and has through holes corresponding to mounting portions 98 .

[0079] Figures 14 to 16 FIG. 1 is a diagram schematically showing a process of mounting a semiconductor device 910 of a comparative structure in Embodiment 1 on a heat sink 10. First, a heat sink 99A is provided on the heat sink 10. Next, the mounting portion 98 of the semiconductor device 910 is aligned with the screw hole 10A of the heat sink 10 ( Fig.14The screw 10B that passes through the left mounting portion 98 and the screw hole 10A of the heat sink 10 are fastened to each other ( Fig.15 ). The axial force Fa is generated at the left mounting portion 98. The reaction force Fr is generated at a position close to the left mounting portion 98. In addition, the screw 10B penetrating the right mounting portion 98 and the screw hole 10A are fastened to each other ( Fig.16 As a result, an axial force Fa is generated at the right mounting portion 98, and a reaction force Fr is generated at a position close to the right mounting portion 98. Fig.13 As shown, the reaction force distance L2 in the comparative structure corresponds to the distance between the mounting portions 98 located at diagonal positions. In such a state, the base plate 91 is easily bent into a concave shape relative to the heat sink 10. When the base plate 91 is bent into a concave shape, for example, a gap is generated between the base plate 91 and the heat sink 99A at the center of the base plate 91. Therefore, the heat dissipation of the semiconductor module 920 is deteriorated.

[0080] On the other hand, the reaction force distance L1 of the semiconductor module 200 in the first embodiment is shorter than the reaction force distance L2 in the comparative structure. Therefore, the deflection of the base plate 1 is reduced or prevented. In other words, the contact between the base plate 1 and the heat sink 9A, or the contact between the heat sink 9A and the heat sink 10 is improved, and the heat dissipation of the semiconductor module 200 is improved.

[0081] In summary, the semiconductor device 100 in Embodiment 1 includes a base plate 1, a semiconductor chip 3, a housing 4, a heat dissipation component 9, and a plurality of mounting portions 8. The semiconductor chip 3 is held on the surface side of the base plate 1. The housing 4 is disposed on the surface of the base plate 1 in such a manner as to accommodate the semiconductor chip 3 therein. The heat dissipation component 9 is disposed on the back side of the base plate 1 and is capable of contacting a heat sink 10 for cooling the semiconductor chip 3. The plurality of mounting portions 8 have a function of mounting the housing 4 on the heat sink 10. The ends 9B and 9C of the heat dissipation component 9 in the extension direction of the long sides of the plurality of sides constituting a shape determined by connecting the positions of the plurality of mounting portions 8 when viewed from above are located between the two mounting portions 8 constituting the long sides.

[0082] According to such a structure, the heat dissipation to the heat sink 10 via the heat sink 9A is improved. Therefore, there is no need to change the specifications of the housing 4, such as adjusting the position of the mounting portion 8, in order to prevent the surface pressure on the heat sink 9A from decreasing, as in the past. The surface pressure on the heat sink 9A is ensured only by changing the structure of the heat sink 9A. As a result, the heat dissipation of the semiconductor device 100 is improved. In addition, according to such a structure, the freedom of structural design of the housing 4 is ensured, so that the miniaturization of the semiconductor device 100 can be achieved. In addition, the internal temperature of the semiconductor device 100 can be prevented from rising when the semiconductor device 100 is driven, and the reliability of power cycle, etc. is improved. Such a semiconductor device 100 is used, for example, in power generation systems, power transmission systems, efficient energy utilization systems, energy regeneration systems, etc.

[0083] The area of ​​the heat sink 9A in the first embodiment in contact with the base plate 1 is reduced compared to the heat sink 99A in the comparative structure. Therefore, the heat dissipation effect cannot be obtained in the area where the heat sink 9A is not in contact with the base plate 1. However, this area is the outer peripheral part of the semiconductor device 100, away from the central part where heat is concentrated. Therefore, for the semiconductor device 100, the improvement in heat dissipation achieved by increasing the surface pressure of the heat sink 9A on the central part is dominant.

[0084] In addition, in the first embodiment, the semiconductor chip 3 is mounted on the insulating substrate 2 bonded to the base plate 1, but the mounting form of the semiconductor chip 3 is not limited to this. For example, the insulating layer 2A and the circuit pattern 2B may be formed integrally on the surface of the base plate 1, and the semiconductor chip 3 may be mounted on the circuit pattern 2B. In such a structure, the function of the insulating substrate 2 is integrated with the base plate 1, so that the heat dissipation is improved and the cost is reduced.

[0085] The heat dissipation member 9 is not limited to the heat dissipation sheet 9A, and may be heat dissipation grease, etc. When the heat dissipation sheet 9A is less likely to deform than the heat dissipation grease, the heat dissipation sheet 9A is effective.

[0086] The base plate 1 may also be thicker in the central portion than in the peripheral portion. In such a structure, even when the base plate 1 is bent into a concave shape relative to the heat sink 10, the contact between the base plate 1 and the heat sink 9A, or the contact between the heat sink 9A and the heat sink 10, is maintained, thereby ensuring the heat dissipation of the semiconductor module 200.

[0087] (Variation of Implementation Example 1)

[0088] The semiconductor module 201 in the modified example of the first embodiment and Figure 6 The semiconductor modules 200 shown are identical, but their manufacturing processes are different. Fig.17This is a diagram showing an outline of the manufacturing process of the semiconductor module 201 in a modified example of the first embodiment. The heat sink 9A is not pre-set in the semiconductor device 101. In the manufacturing process of the semiconductor module 201, first, the heat sink 9A is placed on the heat sink 10. The shape and position of the heat sink 9A are the same as those in the first embodiment. The semiconductor device 101 is placed on the heat sink 9A. The screw 10B penetrating the mounting portion 8 and the screw hole 10A are tightened to each other. The semiconductor module 201 formed in this way also achieves the same effect as the first embodiment.

[0089] <Implementation method 2>

[0090] A semiconductor device and a semiconductor module in Embodiment 2 are described. Embodiment 2 is a subordinate concept of Embodiment 1, and the semiconductor device and the semiconductor module in Embodiment 2 respectively include the structures of the semiconductor device 100 and the semiconductor module 200 in Embodiment 1. In addition, descriptions of the same structures and operations as those in Embodiment 1 are omitted.

[0091] Fig.18 It is a cross-sectional view showing the structure of the semiconductor module 202 in the second embodiment. Fig.19 and Fig. 20 1 and 2 are a cross-sectional view and a bottom view respectively showing the structures of the housing 4 and the base plate 1 of the semiconductor device 102 in the second embodiment. Fig.18 and Fig.19 In the figure, the internal structure of the housing 4 is omitted.

[0092] In the second embodiment, the structure of the base plate 1 is different from that in the first embodiment. In the second embodiment, similarly, the mounting portions 8 (second through holes 82) are respectively provided at the four corners of the housing 4, so that the shape determined by connecting the positions of the four mounting portions 8 in a plan view is a rectangle. The direction in which the longer side of the four sides constituting the rectangle extends is Fig.18 The base plate 1 is disposed inside the plurality of mounting portions 8 in the direction in which the long sides of the rectangle extend. In other words, the base plate 1 is not disposed directly below the second through hole 82 of the housing 4. Fig.18 As shown, the fixing portion 80 of the semiconductor module 202 is composed of the mounting portion 8 , the screw 10B, and the screw hole 10A. The mounting portion 8 is composed of the second through hole 82 .

[0093] Fig.21 and Fig. 22 1 and 2 are a cross-sectional view and a bottom view showing the structure of heat sink 9A in Embodiment 2, respectively. Fig.21 and Fig. 22 In FIG. 1 , the size of the base plate 1 is shown by the dotted line.

[0094] The ends 9B and 9C of the heat sink 9A in the direction of the long side are located inside the ends 1B and 1C of the base plate 1. Fig. 20 and Fig. 22 Ends 9D and 9E of the heat sink 9A (in the longitudinal direction) are located on the long sides or on the outer peripheral side of the housing 4 compared to the long sides.

[0095] Figure 23 to Figure 25 1 is a diagram schematically showing a manufacturing process of the semiconductor module 202 in Embodiment 2. First, the semiconductor device 102 is placed at a predetermined position on the heat sink 10. Specifically, the mounting portion 8 of the semiconductor device 102 is aligned with the screw hole 10A of the heat sink 10 ( Fig.23 The screw 10B penetrating the left mounting portion 8 and the screw hole 10A of the heat sink 10 are fastened to each other ( Fig.24 ). As a result, an axial force Fa is generated in the direction from the housing 4 to the heat sink 10, and a reaction force Fr is generated in the direction from the heat sink 10 to the housing 4. The axial force Fa is generated at the left mounting portion 8. The reaction force Fr is generated at the end 9B of the heat sink 9A close to the left mounting portion 8. In addition, the screw 10B penetrating the right mounting portion 8 and the screw hole 10A are tightened to each other ( Fig.25 As a result, an axial force Fa is generated at the right mounting portion 8, and a reaction force Fr is generated at the end 9C of the heat sink 9A close to the right mounting portion 8. Fig. 22 As shown, the reaction force distance L3 in the second embodiment corresponds to the diagonal distance of the heat sink 9A.

[0096] Next, a structure will be described in which ends 9B and 9C of heat sink 9A in the direction of the long side of the rectangle determined by connecting the positions of four mounting portions 8 are located outside two mounting portions 8 constituting the long side. This structure is referred to as a comparative structure. Fig.26 2 is a cross-sectional view showing the structure of a housing 94 and a base plate 91 of a comparative structure in Embodiment 2. Fig.26 In the figure, the internal structure of the shell 94 is omitted. Fig. 27 It is a bottom view showing the structure of a housing 94 and a base plate 91 of a comparative structure in the second embodiment. Fig.28 and Fig.29 The sectional view and the bottom view respectively show the structure of the heat sink 99A of the comparative structure in Embodiment 2. The heat sink 99A has the same shape as the bottom surface of the housing 94 , and has through holes corresponding to the mounting portions 98 .

[0097] Figure 30 to Figure 32FIG. 1 is a diagram schematically showing a process of mounting a semiconductor device 912 of a comparative structure on a heat sink 10 in Embodiment 2. First, a heat sink 99A is provided on the heat sink 10. Next, the mounting portion 98 of the semiconductor device 912 is aligned with the screw hole 10A of the heat sink 10 ( Fig.30 The screw 10B that passes through the left mounting portion 98 and the screw hole 10A of the heat sink 10 are fastened to each other ( Fig.31 ). The axial force Fa is generated at the left mounting portion 98. The reaction force Fr is generated at the end 91B of the base plate 91 close to the left mounting portion 98. In addition, the screw 10B penetrating the right mounting portion 98 and the screw hole 10A are tightened to each other ( Fig.32 As a result, an axial force Fa is generated at the right mounting portion 98, and a reaction force Fr is generated at the end 91C of the base plate 91 close to the right mounting portion 98. Fig. 27 As shown, the reaction force distance L4 in the comparative structure corresponds to the diagonal distance of the base plate 91. In such a state, the base plate 91 is easily bent into a concave shape relative to the heat sink 10. When the base plate 91 is bent into a concave shape, for example, a gap is generated between the base plate 91 and the heat sink 99A at the center of the base plate 91. Therefore, the heat dissipation of the semiconductor module 922 is deteriorated.

[0098] The reaction force distance L3 of the semiconductor module 202 in the second embodiment is shorter than the reaction force distance L4 in the comparative structure. Therefore, the deflection of the base plate 1 is reduced or prevented. In other words, the contact between the base plate 1 and the heat sink 9A, or the contact between the heat sink 9A and the heat sink 10 is improved, and the heat dissipation of the semiconductor module 202 is improved. The semiconductor device 102 and the semiconductor module 202 in the second embodiment achieve the same effects as those in the first embodiment.

[0099] <Implementation method 3>

[0100] A semiconductor device and a semiconductor module in Embodiment 3 are described. Embodiment 3 is a subordinate concept of Embodiment 1, and the semiconductor device and the semiconductor module in Embodiment 3 respectively include the structures of the semiconductor device 100 and the semiconductor module 200 in Embodiment 1. In addition, the description of the same structures and operations as those in Embodiment 1 or 2 is omitted.

[0101] In the semiconductor modules 200, 201, and 202 described in the first and second embodiments, the fixing portion 80 applies stress to the housing 4 in the direction in which the heat sink 10 is provided. That is, the heat sink 9A is subjected to compressive stress between the heat sink 10 and the base plate 1, and is sandwiched between the two. Preferably, in this compressed state, the film thickness of the heat sink 9A is less than or equal to 200 μm.

[0102] When compressive stress is applied to the heat sink 9A, the thicker the film thickness of the heat sink 9A, the greater the deflection of the base plate 1. However, when the film thickness of the heat sink 9A in the compressed state is less than or equal to 200 μm, the deflection of the base plate 1 is reduced. Therefore, the surface pressure of the heat sink 9A on the central part of the base plate 1 is prevented from decreasing, and the heat dissipation of the semiconductor modules 200, 201, and 202 is improved.

[0103] <Implementation method 4>

[0104] A semiconductor device and a semiconductor module in Embodiment 4 are described. Embodiment 4 is a subordinate concept of Embodiment 1, and the semiconductor device and the semiconductor module in Embodiment 4 respectively include the structures of the semiconductor device 100 and the semiconductor module 200 in Embodiment 1. In addition, descriptions of the same structures and operations as those in any of Embodiments 1 to 3 are omitted.

[0105] The heat sink 9A in Embodiment 4 has an outer shape in which at least one corner is chamfered in a plan view. The chamfered corner is preferably a corner close to the mounting portion 8 among a plurality of corners constituting the planar shape of the heat sink 9A. Fig.33 It is a plan view showing the structure of a heat sink 9A in Embodiment 4. In the heat sink 9A, C-planes (45° planes) are provided at four corners of a rectangle.

[0106] According to such a structure, the reduction amount of the area of ​​the heat sink 9A is suppressed, and the reaction force distance L is shortened. Therefore, the contact area between the heat sink 9A and the base plate 1 and the heat sink 10 is ensured. In other words, the surface pressure on the heat sink 9A is ensured. As a result, the heat dissipation of the semiconductor module is improved.

[0107] <Implementation method 5>

[0108] A semiconductor device and a semiconductor module in Embodiment 5 are described. Embodiment 5 is a subordinate concept of Embodiment 1, and the semiconductor device and the semiconductor module in Embodiment 5 respectively include the structures of the semiconductor device 100 and the semiconductor module 200 in Embodiment 1. In addition, the description of the same structure and operation as any one of Embodiments 1 to 4 is omitted.

[0109] Fig.34 This is a cross-sectional view showing the structure of a semiconductor device 105 in the fifth embodiment. Fig.35 It is a bottom view showing the structure of the base plate 1 of the semiconductor device 105 . Fig.36 and Fig.37 They are a cross-sectional view and a bottom view respectively showing the structure of heat sink 9A in Embodiment 5. Heat sink 9A is provided just below, that is, below, semiconductor chip 3 .

[0110] According to such a structure, the heat dissipation of the central part of the semiconductor module where heat is concentrated is improved. In addition, abnormal heating of the semiconductor chip 3 near the outer periphery is prevented. The operation abnormality of the semiconductor module is reduced.

[0111] <Implementation method 6>

[0112] A semiconductor device and a semiconductor module in Embodiment 6 will be described. The semiconductor device in Embodiment 6 includes the structures of the semiconductor device 101 in the modification of Embodiment 1. The description of the same structures and operations as those in any of Embodiments 1 to 5 will be omitted.

[0113] Fig.38 and Fig.39 They are a plan view and a cross-sectional view respectively showing the structure of the semiconductor module 206 in the sixth embodiment. Fig.39 Show Fig.38 The cross section at the line segment A-A' is recorded. Fig.39 In FIG. 4 , the internal structure of the housing 4 is omitted. Fig.39 In the figure, the shading of the various components is omitted (the same is true in subsequent cross-sectional views).

[0114] The directions in which the long sides and the short sides of the rectangle determined by connecting the positions of the mounting portions 8 are extended are respectively Fig.38 The ends of the heat dissipation member 9 in the longitudinal direction are set as first ends 9B and 9C, and the ends in the lateral direction are set as second ends 9D and 9E. The first ends 9B and 9C are located between two mounting portions 8 constituting the long sides of the rectangle determined by connecting the positions of the mounting portions 8, as in the first embodiment. The second ends 9D and 9E extend outward from the housing 4.

[0115] In the method for manufacturing the semiconductor module 206 of the sixth embodiment, first, the heat sink 9A is placed on the heat sink 10. At this time, the second ends 9D and 9E of the heat sink 9A are temporarily fixed to the heat sink 10 by means of the tape 16 or the like. In this state, the semiconductor device 101 is placed on the heat sink 9A, and the housing 4 and the heat sink 10 are fastened by the screws 10B. Due to this temporary fixing process, the workability is improved.

[0116] <Implementation method 7>

[0117] A semiconductor device and a semiconductor module in Embodiment 7 will be described. The semiconductor device in Embodiment 7 includes the structures of the semiconductor device 101 in the modification of Embodiment 1. In addition, descriptions of the same structures and operations as those in any of Embodiments 1 to 6 will be omitted.

[0118] Fig.40 It is a plan view showing the structure of the semiconductor module 207 in the seventh embodiment. Fig.41 It is a plan view showing the structure of a heat sink 9A in the seventh embodiment. Fig.42 It is a cross-sectional view showing the structure of the semiconductor module 207 . Fig.42 Show Fig.40 The cross section at the line segment BB' is recorded. Fig.42 In the figure, the internal structure of the housing 4 is omitted.

[0119] As in the sixth embodiment, the second ends 9D and 9E of the heat sink 9A extend to the outside of the housing 4. The semiconductor module 207 includes a pressing plate 15 for pressing and fixing the heat sink 9A extending to the outside of the housing 4 toward the heat sink 10. The heat sink 10 is provided with a screw hole for fastening with the screw. The heat sink 9A is provided with a hole for the screw to pass through. The pressing plate 15 is fixed to the heat sink 10 by fastening the screw to the screw hole.

[0120] The heat generated by the semiconductor device 101 is diffused in the direction of the second end portions 9D and 9E of the heat sink 9A extending from the housing 4, and is thus conducted to the heat sink 10. The heat dissipation performance of the semiconductor module 207 is improved.

[0121] <Implementation method 8>

[0122] A semiconductor device and a semiconductor module in Embodiment 8 will be described. The semiconductor device in Embodiment 8 includes the structures of the semiconductor device 101 in the modification of Embodiment 1. In addition, descriptions of the same structures and operations as those in any of Embodiments 1 to 7 will be omitted.

[0123] Fig.43 It is a plan view showing the structure of the semiconductor module 208 in the eighth embodiment. Fig.44 It is a plan view showing the structure of a heat sink 9A and a heat sink 10 in the eighth embodiment.

[0124] The semiconductor module 208 includes three semiconductor devices 101. The three semiconductor devices 101 are mounted on one heat sink 10. The first ends 9B and 9C of the heat sink 9A are located between two mounting portions 8 that constitute the long sides of a rectangle determined by connecting the positions of the mounting portions 8, as in the sixth embodiment. The second ends 9D and 9E of the heat sink 9A extend to the outside of the housing 4. The heat sink 9A sandwiched between the three semiconductor devices 101 and the heat sink 10 is an integrated component.

[0125] In the manufacturing method of the semiconductor module 208 of the eighth embodiment, first, the heat sink 9A is placed on the heat sink 10. The heat sink 9A can carry three semiconductor devices 101. At this time, the heat sink 9A is temporarily fixed to the heat sink 10 by the tape 16 or the like. In this state, the three semiconductor devices 101 are placed on the heat sink 9A, and the housing 4 and the heat sink 10 are fastened by the screws 10B. According to such a manufacturing process, the installation work of the heat sink 9A is reduced, so the installation work of the semiconductor device 101 is efficiently performed. In addition, the effects described in the sixth embodiment are also produced in the same manner.

[0126] (Variation of Implementation Example 8)

[0127] Fig.45 1 is a top view showing the structure of a semiconductor module 208A in a modified example of the eighth embodiment. The semiconductor module 208A includes two semiconductor devices 101. The two semiconductor devices 101 are provided on one heat sink 9A. In addition, the semiconductor module 208A includes a pressing plate 15 as in the seventh embodiment. The pressing plate 15 presses the heat sink 9A between the two semiconductor devices 101 and outside the two semiconductor devices 101. Such a semiconductor module 208A achieves the same effects as in the sixth to eighth embodiments.

[0128] <Implementation method 9>

[0129] A semiconductor device and a semiconductor module in Embodiment 9 will be described. The semiconductor device in Embodiment 9 includes the structures of the semiconductor device 101 in the modification of Embodiment 1. In addition, description of the same structures and operations as those in any of Embodiments 1 to 8 will be omitted.

[0130] Fig.46 and Fig.47 They are a plan view and a cross-sectional view respectively showing the structure of a semiconductor module 209 in the ninth embodiment. Fig.47 Show Fig.46 The cross section at the line segment C-C' is recorded. Fig.47 In the figure, the internal structure of the housing 4 is omitted.

[0131] The semiconductor module 209 includes the pressing plate 15 as in the sixth embodiment. However, the pressing plate 15A in the ninth embodiment is a heat sink including heat dissipation fins. The heat generated by the semiconductor device 101 is diffused to the heat dissipation fins 9A extending from the housing 4 and is dissipated from the heat dissipation fins of the pressing plate 15A. The heat dissipation of the semiconductor module 209 is improved.

[0132] <Implementation method 10>

[0133] A semiconductor device and a semiconductor module in Embodiment 10 are described. Embodiment 10 is a subordinate concept of Embodiment 1, and the semiconductor device and the semiconductor module in Embodiment 10 respectively include the structures of the semiconductor device 100 and the semiconductor module 200 in Embodiment 1. In addition, descriptions of the same structures and operations as those in any of Embodiments 1 to 9 are omitted.

[0134] Fig.48 and Fig.49 1 and 2 are a top view and a cross-sectional view showing the structure of the heat sink 9A in Embodiment 10. The film thickness of the central portion of the heat sink 9A is thicker than that of the peripheral portion. The contact between the base plate 1 and the heat sink 9A, and between the heat sink 9A and the heat sink 10 at the central portion of the semiconductor device is improved. Therefore, the heat dissipation of the semiconductor module is improved.

[0135] <Implementation method 11>

[0136] A semiconductor device and a semiconductor module in Embodiment 11 are described. Embodiment 11 is a subordinate concept of Embodiment 1, and the semiconductor device and the semiconductor module in Embodiment 11 respectively include the structures of the semiconductor device 100 and the semiconductor module 200 in Embodiment 1. In addition, descriptions of the same structures and operations as those in any of Embodiments 1 to 10 are omitted.

[0137] The case 4 in the eleventh embodiment is bonded to the surface of the base plate 1 by the adhesive material 13 containing a resin harder than the resin containing silicon. The adhesive material 13 is made of a hard resin such as epoxy resin instead of a soft material such as silicone resin.

[0138] The housing 4 is fixed to the base plate 1 by a hard resin, so the housing 4 and the base plate 1 are considered as an integral component. That is, in terms of the rigidity of the semiconductor device, the rigidity of the housing 4 is added to the rigidity of the base plate 1. When the screws 10B at the mounting portion 8 are tightened, the base plate 1 becomes less likely to bend. As a result, the heat dissipation of the semiconductor module is improved.

[0139] <Implementation method 12>

[0140] A semiconductor device and a semiconductor module in Embodiment 12 are described. Embodiment 12 is a subordinate concept of Embodiment 1, and the semiconductor device and the semiconductor module in Embodiment 12 respectively include the structures of the semiconductor device 100 and the semiconductor module 200 in Embodiment 1. In addition, descriptions of the same structures and operations as those in any of Embodiments 1 to 11 are omitted.

[0141] The sealing material 6 in the twelfth embodiment includes a resin harder than the resin containing silicon. The sealing material 6 is not made of a soft material such as silicone resin, but is made of a hard resin such as epoxy resin.

[0142] The rigidity of the semiconductor device is supplemented by the rigidity of the sealing material 6. When the screws 10B are tightened at the mounting portion 8, the base plate 1 is less likely to bend. As a result, the heat dissipation of the semiconductor module is improved.

[0143] <Implementation method 13>

[0144] A semiconductor device and a semiconductor module in Embodiment 13 are described. Embodiment 13 is a subordinate concept of Embodiment 1, and the semiconductor device and the semiconductor module in Embodiment 13 respectively include the structures of the semiconductor device 100 and the semiconductor module 200 in Embodiment 1. In addition, descriptions of the same structures and operations as those in any of Embodiments 1 to 12 are omitted.

[0145] The heat sink 9A in the thirteenth embodiment is made of graphite. The heat sink 9A has good heat transfer characteristics in the surface direction, so the heat concentrated in the center of the semiconductor module is conducted in the surface direction. This heat is conducted to the heat sink 10, etc., so the heat dissipation of the semiconductor module is improved.

[0146] In addition, the present invention can freely combine the various embodiments, or appropriately modify or omit the various embodiments.

[0147] While the present invention has been described in detail, the above description is in all aspects illustrative and the present invention is not limited thereto, and it will be understood that numerous modifications not shown and exemplified are conceivable without departing from the scope of the present invention.

Claims

1. A semiconductor device comprising: Base plate; a semiconductor chip held on the surface side of the base plate; a housing, which is disposed on the surface of the base plate in a manner of accommodating the semiconductor chip inside; a heat dissipation component, which is disposed on the back side of the base plate and can be in contact with a heat sink for cooling the semiconductor chip; as well as a plurality of mounting portions, which are used to mount the housing on the radiator, When viewed from above, the end of the heat dissipation component in the extending direction of the long side of the plurality of sides constituting the shape determined by connecting the positions of the plurality of mounting portions is located between the two mounting portions constituting the long side. The semiconductor device further includes an insulating substrate provided on the surface of the base plate. The semiconductor chip is arranged on the surface of the insulating substrate.

2. The semiconductor device according to claim 1, wherein The end of the base plate in the extending direction of the long side is located between the two mounting portions constituting the long side. The end of the heat dissipating member in the extending direction of the long side is located inside the end of the base plate, An end portion of the heat dissipation member in the extending direction of a side different from the long side is located on the long side or on the outer peripheral side of the housing relative to the long side.

3. The semiconductor device according to claim 1 or 2, wherein: The heat dissipating member has an outer shape in which at least one corner is chamfered in a plan view.

4. The semiconductor device according to claim 1 or 2, wherein: The heat dissipation component is arranged below the semiconductor chip.

5. The semiconductor device according to claim 1 or 2, wherein: The film thickness of the central portion of the heat dissipating member is thicker than that of the outer peripheral portion of the heat dissipating member.

6. The semiconductor device according to claim 1 or 2, wherein: The case is bonded to the surface of the base plate by a resin harder than a resin containing silicon.

7. The semiconductor device according to claim 1 or 2, wherein: There is also a packaging material, which is arranged inside the housing and packages the semiconductor chip accommodated in the housing. The encapsulating material includes a resin that is harder than the resin containing silicon.

8. The semiconductor device according to claim 1 or 2, wherein: The heat dissipation component is a heat sink made of graphite.

9. A semiconductor module comprising: At least one semiconductor device according to any one of claims 1 to 8; The heat sink is provided in contact with the back surface of the base plate via the heat dissipation component, and is used to cool the semiconductor chip; as well as a plurality of fixing parts, which fix the housing to the heat sink via the plurality of mounting parts, The plurality of fixing portions apply stress in the direction of the heat sink to the housing to fix the housing to the heat sink.

10. The semiconductor module according to claim 9, wherein: The film thickness of the heat dissipating member sandwiched between the base plate and the heat sink is less than or equal to 200 μm.

11. The semiconductor module according to claim 9 or 10, wherein: An end portion of the heat dissipation member in an extending direction of a side different from the long side protrudes to the outside of the housing.

12. The semiconductor module according to claim 11, wherein: A pressing plate is further provided for pressing the heat dissipating member extending to the outside of the housing toward the heat sink.

13. The semiconductor module according to claim 12, wherein: The pressing plate is a heat sink including heat sink fins.

14. The semiconductor module according to claim 9 or 10, wherein: The at least one semiconductor device is a plurality of semiconductor devices, The heat dissipation components of the plurality of semiconductor devices are integrated.

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