Insulated gate bipolar transistor terminal

Abstract

The invention belongs to the technical field of insulated gate bipolar transistors, and specifically is an insulated gate bipolar transistor terminal, comprising a shell, an IGBT chip and a heat sink; in the prior art, when an excessive current passes through the insulated gate bipolar transistor terminal, a large amount of heat is generated inside the insulated gate bipolar transistor terminal, and a long-term thermal cycle during operation will have an impact on the bonding wire, and there is a risk that the bonding wire will fall off or break, thereby causing a failure of the insulated gate bipolar transistor terminal; when the temperature of the IGBT chip increases, the current of the bonding wire passing through a first thermistor and a second thermistor gradually increases, so that the electromagnet reaches a working current and starts to work, so that a heat sink is lowered to contact the bonding wire, and the temperature of the bonding wire is cooled; at the same time, part of the current from the IGBT chip to the bonding wire is used for the electromagnet to do work, thereby reducing the current passing through the bonding wire, weakening the current carrying efficiency of the bonding wire in the circuit, reducing the generation of heat in the bonding wire, and maintaining the working efficiency of the insulated gate bipolar transistor terminal.

Description

Technical Field

[0001] The invention belongs to the technical field of insulated gate bipolar transistors, in particular to an insulated gate bipolar transistor terminal. Background Art

[0002] The insulated-gate bipolar transistor (IGBT) combines the advantages of the giant transistor (GTR) and the power field effect transistor (Power MOSFET), has good characteristics, and is widely used. IGBT is also a three-terminal device: gate, collector and emitter. IGBT (Insulated Gate Bipolar Transistor) is a MOS structure bipolar device, which is a power device with the high-speed performance of power MOSFET and the low-resistance performance of bipolar. The application range of IGBT is generally in the area of ​​withstand voltage above 600V, current above 10A, and frequency above 1kHz. It is mostly used in industrial motors, small-capacity civilian motors, converters (inverters), camera strobes, induction heating (Induction Heating) rice cookers and other fields. According to the different packages, IGBT is roughly divided into two types. One is a three-terminal monomer package sealed with molded resin, which has formed a series from TO-3P to small surface mount. The other is a module type that packages IGBT and FWD (Flee Wheel Diode) in pairs (2 or 6 groups), which is mainly used in industry. The types of modules are divided into various shapes and packaging methods according to different uses, and they have formed a series.

[0003] For example, a Chinese patent with application number CN201610688245.7 discloses an IGBT module, including: an IGBT liner, a gland mounted on the IGBT liner, a probe mounting hole is provided through the gland, and a conductive probe, whose main body is located in the probe mounting hole, and the upper contact and the lower contact extend outside the probe mounting hole, and the lower contact is in contact with the IGBT liner. A locking protrusion is constructed on the main body of the probe, which is interference fit with the probe mounting hole. In the IGBT module of the present invention, an elastic ring that is easily damaged is no longer used to connect the probe to the gland, and the operation of the user is convenient.

[0004] However, in this technical solution, when an excessive amount of current passes through the insulated gate bipolar transistor terminal, a large amount of heat is generated inside the insulated gate bipolar transistor terminal. Since different materials have different thermal conductivities and their expansion coefficients are also different, long-term thermal cycles during operation will have an impact on the bonding wires, and there is a risk of the bonding wires falling off or breaking, thereby causing failure of the insulated gate bipolar transistor terminal. Summary of the invention

[0005] In order to make up for the deficiencies of the prior art, the present invention proposes an insulated gate bipolar transistor terminal. When the temperature of the IGBT chip increases, the current of the bonding wire passing through the first thermistor and the second thermistor gradually increases, so that the electromagnet reaches the working current and starts to work, and the heat sink block fixed to the iron block is lowered to contact the bonding wire. The temperature of the bonding wire is cooled by the heat sink block; at the same time, through the operation of the electromagnet, part of the current from the IGBT chip to the bonding wire is used for the electromagnet to do work, thereby reducing the current passing through the bonding wire, weakening the current carrying efficiency of the bonding wire in the circuit, reducing the generation of heat in the bonding wire, and maintaining the working efficiency of the insulated gate bipolar transistor terminal.

[0006] The technical solution adopted by the present invention to solve its technical problems is as follows: an insulated gate bipolar transistor terminal described in the present invention comprises a shell, an IGBT chip and a heat sink; a shell is provided on the top of the heat sink, a base is fixedly connected to the middle of the top of the heat sink, and an IGBT chip and a copper sheet are fixedly connected to the top of the base; a bonding wire is fixedly connected to the top of the IGBT chip, and one end of the bonding wire away from the IGBT chip is fixedly connected to the copper sheet; a spring is fixedly connected to the top of the inner wall of the shell, a heat sink is fixedly connected to the bottom of the spring, and an iron block is fixedly connected to the bottom of the heat sink; the heat sink is made of ceramic material; a support block is fixedly connected to the base, and the top of the support block is located below both sides of the top of the IGBT chip and at the bottom of the iron block; an electromagnet is fixedly connected to the top of the support block; the bonding wire is fixedly connected to a first thermistor at one end of the IGBT chip, and the bonding wire is fixedly connected to a second thermistor at one end of the copper sheet; the electromagnet, the first thermistor and the second thermistor are connected in series through a wire;

[0007] In the prior art, when an excessive amount of current passes through the insulated gate bipolar transistor terminal, a large amount of heat is generated inside the insulated gate bipolar transistor terminal. Since different materials have different thermal conductivities and expansion coefficients, long-term thermal cycles during operation will impact the bonding wires, and there is a risk of the bonding wires falling off or breaking, thereby causing failure of the insulated gate bipolar transistor terminal.

[0008] Therefore, in the present invention, when the temperature of the IGBT chip increases, the heat sink cools the shell. The heat sink is a heat dissipation fin. Through the thermistor No. 1 and the thermistor No. 2 fixedly connected to the bonding wire, the resistance of the thermistor No. 1 and the thermistor No. 2 is gradually reduced, so that the current of the bonding wire passing through the thermistor No. 1 and the thermistor No. 2 is gradually increased. Through the wire connection, the electromagnet connected to the wire reaches the working current and starts to work, and the magnetic force of the electromagnet gradually increases with the increase of the current, so that the magnetic force of the electromagnet does work, attracts the iron block and gradually descends until the electromagnet and the iron block are adsorbed. The support block is used to control the height position of the electromagnet, so that the heat dissipation block fixedly connected to the iron block is lowered to contact the bonding wire. Through the action of the heat dissipation block, the temperature of the bonding wire is cooled, the thermal cycle in the operation of the insulated gate bipolar transistor terminal is reduced, the impact of the thermal cycle on the bonding wire is reduced, and the The risk of the bonding wire falling off and breaking is reduced, thereby ensuring the working efficiency of the insulated gate bipolar transistor terminal; at the same time, through the operation of the electromagnet, part of the current from the IGBT chip to the bonding wire is used for the electromagnet to do work, thereby reducing the current passing through the bonding wire, weakening the current carrying efficiency of the bonding wire in the circuit, and reducing the heat generated in the bonding wire; when the temperature in the insulated gate bipolar transistor terminal drops, the resistance of the thermistor No. 1 and the thermistor No. 2 gradually increases, so that the current of the bonding wire passing through the thermistor No. 1 and the thermistor No. 2 gradually decreases, and the magnetic force of the electromagnet gradually decreases until it drops below the working current and stops working, and the iron block is detached, so that the heat sink block is gradually pulled up by the spring, so that the bonding wire resumes working, the current carrying efficiency of the bonding wire in the insulated gate bipolar transistor terminal is maintained, and the working efficiency of the insulated gate bipolar transistor terminal is maintained.

[0009] Preferably, a groove is provided at the bottom of the heat sink block, so that when the heat sink block is lowered, the groove fits with the bonding wire; through the groove provided at the bottom of the heat sink block, when the heat sink block fits with the bonding wire, the contact area between the heat sink block and the bonding wire is increased, and the heat dissipation efficiency of the heat sink to the bonding wire is further increased, and the thermal cycle of the insulated gate bipolar transistor terminal during operation is reduced; at the same time, when the heat sink block fits with the bonding wire, the groove limits the bonding wire, reduces the deformation of the bonding wire squeezed by the heat sink, reduces the risk of the bonding wire falling off and breaking, and ensures the working efficiency of the insulated gate bipolar transistor terminal.

[0010] Preferably, a connecting block is fixedly connected to the end of the heat sink block, and an end of the connecting block away from the heat sink is in sliding contact with the shell; the connecting block is made of ceramic material; the heat absorbed by the heat sink block is introduced into the shell through the connecting block fixed to the end of the heat sink block, and the heat in the connecting block is introduced into the radiator through the shell, thereby further increasing the heat dissipation efficiency of the heat sink block for the bonding wire, reducing the thermal cycle of the insulated gate bipolar transistor terminal during operation, reducing the impact of the thermal cycle on the bonding wire, reducing the risk of the bonding wire falling off and breaking, and ensuring the working efficiency of the insulated gate bipolar transistor terminal.

[0011] Preferably, an extrusion block is fixedly connected to one end of the heat sink facing the copper sheet, and the extrusion block is made of ceramic material; through the extrusion block fixedly connected to the heat sink, when the heat sink is lowered, the extrusion block is made to fit with the bonding wire, and the heat in the bonding wire is introduced into the extrusion block, thereby increasing the heat dissipation area of ​​the bonding wire, further increasing the heat dissipation efficiency of the heat sink for the bonding wire, reducing the thermal cycle during the operation of the insulated gate bipolar transistor terminal, reducing the impact of the thermal cycle on the bonding wire, reducing the risk of the bonding wire falling off and breaking, and ensuring the working efficiency of the insulated gate bipolar transistor terminal.

[0012] Preferably, a group of ventilation holes are provided on the shell, and a filter is fixedly connected to the inner wall of the ventilation hole; through the filter fixedly connected to the inner wall of the ventilation hole, the hot air inside the IGBT terminal is discharged to the outside of the IGBT terminal under the convection of the ventilation hole, so that the temperature in the IGBT terminal is reduced, the thermal cycle during the operation of the IGBT terminal is reduced, the impact of the thermal cycle on the bonding wire is reduced, and the risk of the bonding wire falling off and breaking is reduced, thereby ensuring the working efficiency of the IGBT terminal. At the same time, the filter provided in the ventilation hole prevents dust in the air from entering the interior of the IGBT terminal during the air circulation process, thereby affecting the operation of the internal components of the IGBT terminal, thereby maintaining the working efficiency of the IGBT terminal.

[0013] Preferably, a group of No. 1 positioning blocks are fixedly connected to the bottom of the shell; a group of No. 2 positioning blocks are fixedly connected to the top of the heat sink; the No. 1 positioning blocks and the No. 2 positioning blocks are connected by screws; when the insulated gate bipolar transistor terminal fails, the screws are turned to disengage the screws from the No. 1 positioning blocks and the No. 2 positioning blocks, so that the shell is separated from the heat sink; when the maintenance is completed, the shell is connected to the heat sink by turning the screws, which is convenient for the staff to repair the insulated gate bipolar transistor terminals, that is, the connection firmness between the shell and the heat sink is increased, the heat conduction efficiency between the shell and the heat sink is increased, and the work efficiency of the staff is increased.

[0014] The beneficial effects of the present invention are as follows:

[0015] 1. An insulated gate bipolar transistor terminal described in the present invention, when the temperature of the IGBT chip increases, the current of the bonding wire passing through the first thermistor and the second thermistor gradually increases, so that the electromagnet reaches the working current and starts to work, and the heat sink block fixed to the iron block is lowered to contact the bonding wire, and the temperature of the bonding wire is cooled by the heat sink; at the same time, through the operation of the electromagnet, part of the current from the IGBT chip to the bonding wire is used for the electromagnet to do work, thereby reducing the current passing through the bonding wire, weakening the current carrying efficiency of the bonding wire in the circuit, reducing the generation of heat in the bonding wire, and maintaining the working efficiency of the insulated gate bipolar transistor terminal.

[0016] 2. The insulated gate bipolar transistor terminal described in the present invention increases the contact area between the heat sink and the bonding wire when the heat sink is in contact with the bonding wire through the groove provided at the bottom of the heat sink, thereby further increasing the heat dissipation efficiency of the heat sink to the bonding wire, reducing the thermal cycle during operation of the insulated gate bipolar transistor terminal, reducing the impact of the thermal cycle on the bonding wire, reducing the risk of the bonding wire falling off or breaking, and ensuring the working efficiency of the insulated gate bipolar transistor terminal. At the same time, when the heat sink is in contact with the bonding wire, the groove limits the bonding wire, reducing the deformation of the bonding wire, reducing the risk of the bonding wire falling off or breaking, and ensuring the working efficiency of the insulated gate bipolar transistor terminal. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present invention will be further described below in conjunction with the accompanying drawings.

[0018] Figure 1 is a stereogram of the present invention;

[0019] Figure 2 yes Figure 1 A partial enlarged view of the middle A;

[0020] Figure 3 yes Figure 1 A partial enlarged view of point B in the middle;

[0021] Figure 4 yes Figure 1 A partial enlarged view of point C in the middle;

[0022] In the figure: 1. shell; 11. IGBT chip; 12. heat sink; 13. base; 14. copper sheet; 15. bonding wire; 16. spring; 17. heat sink; 18. iron block; 19. support block; 110. electromagnet; 111. thermistor No. 1; 112. thermistor No. 2; 113. wire; 2. groove; 3. connection block; 4. extrusion block; 5. ventilation hole; 51. filter; 6. positioning block No. 1; 61. positioning block No. 2; 62. screw. DETAILED DESCRIPTION

[0023] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further explained below in conjunction with specific implementation methods.

[0024] like Figures 1 to 4As shown, an insulated gate bipolar transistor terminal described in the present invention comprises a housing 1, an IGBT chip 11 and a heat sink 12; the housing 1 is provided on the top of the heat sink 12, a base 13 is fixedly connected to the middle of the top of the heat sink 12, the top of the base 13 is fixedly connected to the IGBT chip 11 and a copper sheet 14; a bonding wire 15 is fixedly connected to the top of the IGBT chip 11, and one end of the bonding wire 15 away from the IGBT chip 11 is fixedly connected to the copper sheet 14; a spring 16 is fixedly connected to the top of the inner wall of the housing 1, a heat sink 17 is fixedly connected to the bottom of the spring 16, and a heat sink 17 is fixedly connected to the bottom of the heat sink 17 The iron block 18; the heat sink 17 is made of ceramic material; the base 13 is fixedly connected with a support block 19, the top of the support block 19 is located below the two sides of the top of the IGBT chip 11, and is at the bottom of the iron block 18; the top of the support block 19 is fixedly connected with an electromagnet 110; the bonding wire 15 is provided at one end of the IGBT chip 11 and is fixedly connected with a first thermistor 111, and the bonding wire 15 is provided at one end of the copper sheet 14 and is fixedly connected with a second thermistor 112; the electromagnet 110, the first thermistor 111 and the second thermistor 112 are connected in series through a wire 113;

[0025] In the prior art, when an excessive amount of current passes through the insulated gate bipolar transistor terminal, a large amount of heat is generated inside the insulated gate bipolar transistor terminal. Since different materials have different thermal conductivities and their expansion coefficients are also different, long-term thermal cycles during operation will have an impact on the bonding wire 15, and there is a risk of the bonding wire 15 falling off or breaking, thereby causing the insulated gate bipolar transistor terminal to malfunction.

[0026] Therefore, in the present invention, when the temperature of the IGBT chip 11 increases, the heat sink 12 cools the housing 1. The heat sink 12 is a heat dissipation fin. Through the first thermistor 111 and the second thermistor 112 fixedly connected to the bonding wire 15, the resistance of the first thermistor 111 and the second thermistor 112 is gradually reduced, so that the current of the bonding wire 15 passing through the first thermistor 111 and the second thermistor 112 is gradually increased, and the electromagnet 110 connected to the wire 113 is connected through the wire 113. When the working current reaches the working current, the electromagnet starts to work, and the magnetic force of the electromagnet gradually increases with the increase of the current, so that the magnetic force of the electromagnet 110 does work, attracts the iron block 18 to gradually descend, until the electromagnet 110 and the iron block 18 are adsorbed, and the support block 19 is used to control the height position of the electromagnet 110, so that the heat sink 17 fixedly connected to the iron block 18 is lowered to contact the bonding wire 15, and the temperature of the bonding wire 15 is cooled by the heat sink 17, thereby reducing the thermal cycle in the operation of the insulated gate bipolar transistor terminal and reducing the impact of the thermal cycle on the bonding wire 15. The impact of the bonding wire 15 is reduced, the risk of the bonding wire 15 falling off or breaking is reduced, and the working efficiency of the insulated gate bipolar transistor terminal is ensured; at the same time, through the operation of the electromagnet 110, part of the current from the IGBT chip 11 to the bonding wire 15 is used for the electromagnet 110 to do work, reducing the current passing through the bonding wire 15, weakening the current carrying efficiency of the bonding wire 15 in the circuit, and reducing the heat generated in the bonding wire 15; when the temperature in the insulated gate bipolar transistor terminal drops, the first thermistor 111 and the second thermistor 112 are The resistance of resistor 112 gradually increases, so that the current of bonding wire 15 passing through thermistor No. 111 and thermistor No. 2 112 gradually decreases, and the magnetic force of electromagnet 110 gradually decreases until it drops below the working current and stops working. The iron block 18 is detached, so that the heat sink 17 is gradually pulled up under the action of spring 16, so that the bonding wire 15 resumes working, maintains the current carrying efficiency of the bonding wire 15 in the insulated gate bipolar transistor terminal, and maintains the working efficiency of the insulated gate bipolar transistor terminal.

[0027] As an embodiment of the present invention, a groove 2 is provided at the bottom of the heat sink 17, so that when the heat sink 17 is lowered, the groove 2 is fitted with the bonding wire 15; through the groove 2 provided at the bottom of the heat sink 17, when the heat sink 17 is fitted with the bonding wire 15, the contact area between the heat sink 17 and the bonding wire 15 is increased, and the heat dissipation efficiency of the heat sink 17 on the bonding wire 15 is further increased, and the thermal cycle of the insulated gate bipolar transistor terminal during operation is reduced, and the impact of the thermal cycle on the bonding wire 15 is reduced. At the same time, when the heat sink 17 is fitted with the bonding wire 15, the groove 2 limits the bonding wire 15, reduces the deformation of the bonding wire 15 squeezed by the heat sink 17, reduces the risk of the bonding wire 15 falling off or breaking, and ensures the working efficiency of the insulated gate bipolar transistor terminal.

[0028] As an embodiment of the present invention, the end of the heat dissipation block 17 is fixedly connected with a connecting block 3, and the end of the connecting block 3 away from the heat dissipation block 17 is in sliding contact with the shell 1; the connecting block 3 is made of ceramic material; through the connecting block 3 fixedly connected to the end of the heat dissipation block 17, the heat absorbed by the heat dissipation block 17 is introduced into the shell 1 through the connecting block 3, and the heat in the connecting block 3 is introduced into the radiator 12 through the shell 1, thereby further increasing the heat dissipation efficiency of the heat dissipation block 17 for the bonding wire 15, reducing the thermal cycle of the insulated gate bipolar transistor terminal during operation, reducing the impact of the thermal cycle on the bonding wire 15, reducing the risk of the bonding wire 15 falling off and breaking, and ensuring the working efficiency of the insulated gate bipolar transistor terminal.

[0029] As an embodiment of the present invention, the heat dissipation block 17 is fixedly connected to an extrusion block 4 at one end facing the copper sheet 14, and the extrusion block 4 is made of ceramic material; through the extrusion block 4 fixedly connected to the heat dissipation block 17, when the heat dissipation block 17 is lowered, the extrusion block 4 is made to fit with the bonding wire 15, and the heat in the bonding wire 15 is introduced into the extrusion block 4, thereby increasing the heat dissipation area of ​​the bonding wire 15, further increasing the heat dissipation efficiency of the heat dissipation block 17 on the bonding wire 15, reducing the thermal cycle of the insulated gate bipolar transistor terminal during operation, reducing the impact of the thermal cycle on the bonding wire 15, reducing the risk of the bonding wire 15 falling off or breaking, and ensuring the working efficiency of the insulated gate bipolar transistor terminal.

[0030] As an embodiment of the present invention, a group of ventilation holes 5 are provided on the housing 1, and a filter 51 is fixedly connected to the inner wall of the ventilation hole 5; through the filter 51 fixedly connected to the inner wall of the ventilation hole 5, the hot air inside the IGBT terminal is discharged to the outside of the IGBT terminal under the convection of the ventilation hole 5, so that the temperature in the IGBT terminal is reduced, the thermal cycle of the IGBT terminal during operation is reduced, the impact of the thermal cycle on the bonding wire 15 is reduced, and the risk of the bonding wire 15 falling off and breaking is reduced, thereby ensuring the working efficiency of the IGBT terminal. At the same time, through the filter 51 provided in the ventilation hole 5, dust in the air is prevented from entering the interior of the IGBT terminal during air circulation, thereby affecting the operation of the internal components of the IGBT terminal, and maintaining the working efficiency of the IGBT terminal.

[0031] As an embodiment of the present invention, a group of No. 1 positioning blocks 6 are fixedly connected to the bottom of the shell 1; a group of No. 2 positioning blocks 61 are fixedly connected to the top of the heat sink 12; the No. 1 positioning blocks 6 and the No. 2 positioning blocks 61 are connected by screws 62; when a fault occurs in the insulated gate bipolar transistor terminal, the screws 62 are rotated to disengage the screws 62 from the No. 1 positioning blocks 6 and the No. 2 positioning blocks 61, so that the shell 1 is disengaged from the heat sink 12; when the maintenance is completed, the shell 1 is connected to the heat sink 12 by rotating the screws 62, which is convenient for the staff to repair the insulated gate bipolar transistor terminals, that is, the connection firmness between the shell 1 and the heat sink 12 is increased, the heat conduction efficiency between the shell 1 and the heat sink 12 is increased, and the work efficiency of the staff is increased.

[0032] The specific workflow is as follows:

[0033] When the temperature of the IGBT chip 11 increases, the resistance of the thermistor 111 and the thermistor 112 are gradually reduced through the thermistor 111 and the thermistor 112 fixedly connected to the bonding wire 15, so that the current of the bonding wire 15 passing through the thermistor 111 and the thermistor 112 is gradually increased, and the electromagnet 110 connected to the wire 113 reaches the working current and starts to work, and the magnetic force of the electromagnet gradually increases with the increase of the current, so that the magnetic force of the electromagnet 110 does work, attracts the iron block 18 to gradually descend, until the electromagnet 110 and the iron block 18 are adsorbed, and the support block 19 controls the position of the electromagnet 110, so that the heat sink 17 fixedly connected to the iron block 18 is lowered and connected to the bonding wire 15 The temperature of the bonding wire 15 is lowered by the heat sink 17. At the same time, the electromagnet 110 works so that part of the current from the IGBT chip 11 to the bonding wire 15 is used to do work for the electromagnet 110, thereby reducing the current passing through the bonding wire 15 and weakening the current-carrying efficiency of the bonding wire 15 in the circuit. When the temperature in the terminal of the insulated gate bipolar transistor drops, the resistance of the thermistor 111 and the thermistor 112 gradually increases, so that the current of the bonding wire 15 passing through the thermistor 111 and the thermistor 112 gradually decreases, and the magnetic force of the electromagnet 110 gradually decreases until it drops below the working current and stops working. The iron block 18 is detached, so that the heat sink 17 gradually dissipates the heat under the action of the spring 16. The heat sink 17 is pulled up to make the bonding wire 15 resume working; the groove 2 provided at the bottom of the heat sink 17 increases the contact area between the heat sink 17 and the bonding wire 15 when the heat sink 17 is fitted with the bonding wire 15, and further increases the heat dissipation efficiency of the heat sink 17 to the bonding wire 15; at the same time, when the heat sink 17 is fitted with the bonding wire 15, the groove 2 limits the bonding wire 15 to reduce the deformation of the heat sink 17 squeezing the bonding wire 15; the heat absorbed by the heat sink 17 is introduced into the housing 1 through the connecting block 3 through the end of the heat sink 17, and the heat in the connecting block 3 is introduced into the radiator 12 through the housing 1, further increasing the heat dissipation efficiency of the heat sink 17 to the bonding wire 15; the extrusion block 4 fixedly connected to the heat sink 17 makes the heat sink 17 When the heat block 17 is lowered, the extrusion block 4 is made to fit with the bonding wire 15, and the heat in the bonding wire 15 is introduced into the extrusion block 4, thereby increasing the heat dissipation area of ​​the bonding wire 15 and further increasing the heat dissipation efficiency of the heat dissipation block 17 on the bonding wire 15; through the filter 51 fixedly connected to the inner wall of the ventilation hole 5, the hot air inside the IGBT terminal is discharged to the outside of the IGBT terminal under the convection of the ventilation hole 5, so that the temperature in the IGBT terminal is reduced; at the same time, the filter 51 provided in the ventilation hole 5 prevents dust in the air from entering the IGBT terminal during the air circulation process, thereby affecting the operation of the internal components of the IGBT terminal, and maintaining the working efficiency of the IGBT terminal;When the IGBT terminal fails, the screw 62 is turned to disengage the screw 62 from the first positioning block 6 and the second positioning block 61, so that the housing 1 is disengaged from the heat sink 12; when the maintenance is completed, the housing 1 is connected to the heat sink 12 by turning the screw 62, which is convenient for the staff to perform maintenance on the IGBT terminal, that is, the connection between the housing 1 and the heat sink 12 is increased, and the work efficiency of the staff is increased. ;

[0034] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the scope of protection of the present invention.

[0035] The above shows and describes the basic principles, main features and advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. An insulated gate bipolar transistor terminal, characterized in that: The invention comprises a housing (1), an IGBT chip (11) and a heat sink (12); the housing (1) is provided on the top of the heat sink (12); a base (13) is fixedly connected to the middle of the top of the heat sink (12); the top of the base (13) is fixedly connected to the IGBT chip (11) and a copper sheet (14); the top of the IGBT chip (11) is fixedly connected to a bonding wire (15); one end of the bonding wire (15) away from the IGBT chip (11) is fixedly connected to the copper sheet (14); the top of the inner wall of the housing (1) is fixedly connected to a spring (16); the bottom of the spring (16) is fixedly connected to a heat sink (17); the bottom of the heat sink (17) is fixedly connected to an iron block (18); the heat sink (11) is fixedly connected to the copper sheet (14 ... The heat block (17) is made of ceramic material; a support block (19) is fixedly connected to the base (13), the top of the support block (19) is located below the top of the IGBT chip (11) on both sides and at the bottom of the iron block (18); an electromagnet (110) is fixedly connected to the top of the support block (19); one end of the bonding wire (15) provided on the IGBT chip (11) is fixedly connected to a first thermistor (111), and one end of the bonding wire (15) provided on the copper sheet (14) is fixedly connected to a second thermistor (112); the electromagnet (110), the first thermistor (111) and the second thermistor (112) are connected in series via a wire (113); When the temperature of the IGBT chip (11) increases, the resistance of the first thermistor (111) and the second thermistor (112) gradually decreases, so that the current of the bonding wire (15) passing through the first thermistor (111) and the second thermistor (112) gradually increases, and part of the current from the IGBT chip (11) to the bonding wire (15) is used for the electromagnet (110) to do work, so that the electromagnet (110) and the iron block (18) are adsorbed, and the heat sink (17) fixedly connected to the iron block (18) is lowered to contact the bonding wire (15), and the temperature of the bonding wire (15) is cooled by the action of the heat sink (17).

2. An insulated gate bipolar transistor terminal according to claim 1, characterized in that: The bottom of the heat dissipation block (17) is provided with a groove (2), so that when the heat dissipation block (17) is lowered, the groove (2) is in contact with the bonding wire (15).

3. An insulated gate bipolar transistor terminal according to claim 2, characterized in that: The end of the heat dissipation block (17) is fixedly connected to a connection block (3), and one end of the connection block (3) away from the heat dissipation block (17) is in sliding contact with the housing (1); the connection block (3) is made of ceramic material.

4. An insulated gate bipolar transistor terminal according to claim 3, characterized in that: One end of the heat dissipation block (17) facing the copper sheet (14) is fixedly connected to an extrusion block (4), and the extrusion block (4) is made of ceramic material.

5. The insulated gate bipolar transistor terminal according to claim 1, characterized in that: The housing (1) is provided with a group of ventilation holes (5), and the inner walls of the ventilation holes (5) are fixedly connected with a filter screen (51).

6. An insulated gate bipolar transistor terminal according to claim 5, characterized in that: A group of first positioning blocks (6) is fixedly connected to the bottom of the housing (1); a group of second positioning blocks (61) is fixedly connected to the top of the heat sink (12); and the first positioning blocks (6) and the second positioning blocks (61) are connected via screws (62).

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