AMOLED display screen manufacturing method and structure

Abstract

The present invention discloses a method and structure for manufacturing an AMOLED display screen. The method forms an active layer, a gate layer, a source-drain electrode layer, an anode layer and a pixel definition layer on a substrate. The active layer and the gate layer, the gate layer and the source-drain electrode layer, and the source-drain electrode layer and the anode layer are insulated and isolated by an insulating layer. A first via hole layer and a second via hole layer are formed in the insulating layer at corresponding electrical connection positions. The process steps are simplified. While ensuring the basic components of the AMOLED display screen, a layer of film structure is reduced. That is, the hierarchical structure of the AMOLED display screen is simplified, the loss of raw materials is effectively reduced, the production capacity is improved, and the overall manufacturing cost of the AMOLED display screen is reduced. In addition, since the process steps are simplified, the defective product rate of the AMOLED display screen is reduced by simplifying the process steps.

Description

Technical Field

[0001] The present invention relates to the technical field of OLED display screen manufacturing, and in particular to a method and structure for manufacturing an AMOLED display screen. Background Art

[0002] With the continuous innovation of display technology, AMOLED display products have been widely used in various industries, and their good performance has been recognized by many consumers and electronic equipment manufacturers.

[0003] like Figure 1 The internal structure diagram of the AMOLED display screen 30 in the prior art is shown. The AMOLED display screen 30 is composed of a semiconductor layer 31, a gate layer 32, a storage capacitor layer 33, a source-drain electrode layer 34, an anode layer 35 and a pixel definition layer 36 from bottom to top. There is an insulating layer 37 between two adjacent layers. A first via hole connection layer 38 and a second via hole connection layer 39 are formed by opening via holes at corresponding positions of the insulating layer 37 between the layers, so that the semiconductor layer 31 can be electrically connected to the source-drain electrode layer 34, the storage capacitor layer 33 can be electrically connected to the source-drain electrode layer 34, and the anode layer 35 can be electrically connected to the source-drain electrode layer 34. Due to the complex process flow of manufacturing the above-mentioned AMOLED display screen 30 in the prior art and the wide variety of consumable materials, the manufacturing cost of the AMOLED display screen is greatly increased; in addition, since many processes are involved to complete the production, the defective rate of the AMOLED display screen will be greatly increased during the period. Summary of the invention

[0004] The purpose of the present invention is to overcome the deficiencies in the prior art and provide an AMOLED display manufacturing method and structure that simplifies process steps, reduces raw material loss, and improves production capacity and yield rate.

[0005] The objective of the present invention is achieved through the following technical solutions:

[0006] A first aspect of the present application provides a method for manufacturing an AMOLED display screen, comprising:

[0007] Processing from bottom to top on the substrate to form an active layer, a gate layer, a source-drain electrode layer, an anode layer and a pixel definition layer, wherein the active layer and the gate layer, the gate layer and the source-drain electrode layer, and the source-drain electrode layer and the anode layer are insulated and isolated by an insulating layer;

[0008] Confirming connection channels between the source and drain electrode layers and the active layer and the gate layer, respectively, and processing and forming a first via layer in the insulating layer corresponding to the connection channels, so that the source and drain electrode layers can be electrically connected to the active layer and the gate layer, respectively;

[0009] An anode channel between the anode layer and the source-drain electrode layer is confirmed, and a second via layer is formed in the insulating layer corresponding to the anode channel, so that the anode layer can be electrically connected to the source-drain electrode layer.

[0010] Preferably, the specific operations of the method are:

[0011] Performing patterning on the substrate by photolithography to form the active layer;

[0012] Depositing on the upper part of the active layer to form a first insulating layer on the upper part of the active layer;

[0013] Depositing on the first insulating layer to form a metal film layer on the first insulating layer, and patterning the metal film layer on the first insulating layer by photolithography to obtain the gate layer;

[0014] Depositing on the gate layer to form a second insulating layer on the gate layer;

[0015] Performing patterning on the first insulating layer and the second insulating layer by using a photolithography method, so as to form the first via layer in the first insulating layer and the second insulating layer;

[0016] Depositing above the first via layer to form a metal film layer above the first via layer, and patterning the metal film layer above the first via layer by photolithography to obtain the source and drain electrode layer, wherein the source and drain electrode layer is electrically connected to the active layer and the gate layer respectively through the first via layer;

[0017] Depositing on the source and drain electrode layer to form a third insulating layer on the source and drain electrode layer, and patterning the third insulating layer by photolithography to form a second via layer in the third insulating layer;

[0018] Depositing above the second via layer to form a metal film layer above the second via layer, and patterning the metal film layer above the second via layer by photolithography to obtain the anode layer, wherein the anode layer is electrically connected to the source and drain electrode layer through the second via layer;

[0019] Deposition is performed on the anode layer to form a metal film layer on the anode layer, and the metal film layer on the anode layer is patterned by photolithography to obtain the pixel definition layer.

[0020] Preferably, before forming the active layer on the substrate, a buffer layer and a semiconductor layer are sequentially formed on the substrate, and the semiconductor layer is patterned by photolithography to form the active layer.

[0021] The second aspect of the present application provides an AMOLED display screen structure, comprising a substrate, and further comprising an active layer, a gate layer, a source-drain electrode layer, an anode layer and a pixel definition layer on the substrate from bottom to top, wherein the active layer and the gate layer, the gate layer and the source-drain electrode layer, and the source-drain electrode layer and the anode layer are insulated and isolated by an insulating layer;

[0022] The source-drain electrode layer is electrically connected to the active layer and the gate layer respectively, and a first via layer is provided in the insulating layer corresponding to the source-drain electrode layer being electrically connected to the active layer and the gate layer respectively;

[0023] The anode layer can be electrically connected to the source-drain electrode layer, and a second via layer is provided in the insulating layer corresponding to the anode layer being electrically connected to the source-drain electrode layer.

[0024] Preferably, the insulating layer is specifically divided into a first insulating layer, a second insulating layer and a third insulating layer, the first insulating layer is located between the active layer and the gate layer, the second insulating layer is located between the gate layer and the source and drain layer, the third insulating layer is located between the source and drain layer and the anode layer, the first via layer is provided in the first insulating layer and the second insulating layer, and the second via layer is provided in the third insulating layer.

[0025] Preferably, a buffer layer and a semiconductor layer are arranged on the substrate, the semiconductor layer is arranged on the buffer layer, and the active layer is arranged on the semiconductor layer.

[0026] Preferably, the thickness of the first insulating layer, the second insulating layer and the third insulating layer are all in the range of 300 angstroms to 10 microns.

[0027] The advantages and beneficial effects of the present invention compared to the prior art are as follows:

[0028] The AMOLED display screen manufactured by the method of the present application simplifies the process steps and reduces a film layer structure while ensuring the basic components of the AMOLED display screen, that is, simplifies the hierarchical structure of the AMOLED display screen, effectively reduces the loss of raw materials, improves production capacity, and reduces the overall manufacturing cost of the AMOLED display screen; in addition, since the process steps are simplified, the defective rate of the AMOLED display screen is reduced by simplifying the process. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0030] Figure 1 It is a structural schematic diagram of an AMOLED display screen in the prior art;

[0031] Figure 2 A schematic diagram of a process flow of an AMOLED display manufacturing method according to an embodiment of the present invention;

[0032] Figure 3 A schematic flow chart of specific steps of a method for manufacturing an AMOLED display screen in one embodiment of the present invention;

[0033] Figure 4 A schematic diagram of the structure of an AMOLED display screen with a top-gate structure manufactured by the method of the present invention;

[0034] Figure 5 The schematic diagram is a structural diagram of an AMOLED display screen with a bottom-gate structure manufactured by the method of the present invention. DETAILED DESCRIPTION

[0035] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thoroughly understood.

[0036] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation method.

[0037] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0038] The present application provides a method for manufacturing an AMOLED display screen, comprising:

[0039] See also Figure 2 An active layer, a gate layer, a source-drain electrode layer, an anode layer and a pixel definition layer are formed on the substrate from bottom to top, and the active layer and the gate layer, the gate layer and the source-drain electrode layer, and the source-drain electrode layer and the anode layer are all insulated and isolated by an insulating layer.

[0040] In this way, the substrate is the base material board of the AMOLED display screen. All the electronic components of the AMOLED display screen are integrated on the substrate. The active layer, gate layer, source and drain layer and anode layer are the hierarchical structures that realize the display of the AMOLED display screen. The insulating layer plays the role of insulation isolation to prevent the direct contact between two adjacent hierarchical structures, resulting in internal short circuits, and thus damaging the AMOLED display screen.

[0041] See also Figure 2 , confirm the connection channels between the source and drain layers and the active layer and the gate layer respectively, and form a first via layer in the insulating layer corresponding to the connection channels, so that the source and drain layers can be electrically connected to the active layer and the gate layer respectively.

[0042] In this way, if the AMOLED display screen is to work, it is also necessary to electrically connect the corresponding hierarchical structures according to the preset circuit layout, confirm the connection channels between the source and drain layers and the active layer and the gate layer respectively, and form a first via layer (the first via layer is actually a through-hole structure) in the insulating layer corresponding to the connection channel, so that the source and drain layers can be electrically connected to the active layer and the gate layer respectively through the first via layer.

[0043] See also Figure 2 , confirm the anode channel between the anode layer and the source and drain layer, and form a second via layer in the insulating layer corresponding to the anode channel, so that the anode layer can be electrically connected to the source and drain layer.

[0044] In this way, the anode channel between the anode layer and the source and drain layer is confirmed in the same way, and a second via layer (the second via layer is also a through-hole structure) is formed in the insulating layer corresponding to the anode channel, so that the anode layer can be electrically connected to the source and drain layer.

[0045] It should also be noted that the AMOLED display screen manufactured by the method of the present application has streamlined process steps, and reduced one film layer structure while ensuring the basic components of the AMOLED display screen, that is, the hierarchical structure of the AMOLED display screen is streamlined, which effectively reduces the loss of raw materials, improves production capacity, and reduces the overall manufacturing cost of the AMOLED display screen; in addition, since the process steps are streamlined, the defective rate of the AMOLED display screen is reduced by simplifying the process.

[0046] In order to better understand the AMOLED display manufacturing method of the present application, please refer to Figure 3 The following is a systematic description of the operation process steps of the application method, and the specific operations are:

[0047] Step S20: patterning the substrate using a photolithography method to form an active layer.

[0048] Thus, the photolithography method is to use a photomask to expose the substrate, so that part of the light can pass through the photomask to etch the substrate, and form a pattern on the surface of the substrate, that is, graphic processing, so that the substrate forms an active layer. The basic principle of the photolithography method will not be elaborated in detail, and is well known to those skilled in the art. Step S21, depositing on the upper part of the active layer to form a first insulating layer on the upper part of the active layer.

[0049] In this way, a first insulating layer is formed above the active layer by a deposition method. The first insulating layer plays the role of insulating isolation. Subsequently, a corresponding hierarchical structure needs to be formed based on the first insulating layer. The basic principle of deposition will not be elaborated in detail and is well known to those skilled in the art.

[0050] Step S22, depositing on the top of the first insulating layer to form a metal film layer on the top of the first insulating layer, and patterning the metal film layer on the top of the first insulating layer by using a photolithography method to obtain a gate layer.

[0051] In this way, after obtaining the first insulating layer, a metal film layer can be formed on the first insulating layer by deposition, and the metal film layer is subjected to photolithography and patterning to obtain a gate layer, which is a key hierarchical structure for driving the AMOLED display.

[0052] Step S23 , depositing on the gate layer to form a second insulating layer on the gate layer.

[0053] Then, a second insulating layer is deposited on the gate layer. The function of the second insulating layer is the same as that of the first insulating layer, which is to provide insulation isolation to prevent short circuit inside the AMOLED display.

[0054] Step S24: patterning the first insulating layer and the second insulating layer by using a photolithography method, so as to form a first via layer in the first insulating layer and the second insulating layer.

[0055] In this way, the first insulating layer and the second insulating layer are patterned (ie, through holes are etched in the two insulating layers, and the through holes correspond to the first via layer) to obtain the first via layer, which is a key hierarchical structure for realizing electrical connection of the hierarchical structure.

[0056] Step S25, depositing on the top of the first via layer to form a metal film layer on the top of the first via layer, and patterning the metal film layer on the top of the first via layer by photolithography to obtain a source and drain layer, and the source and drain layer are electrically connected to the active layer and the gate layer respectively through the first via layer.

[0057] In this way, a metal film layer is deposited on the first via layer, and the metal film layer is patterned by photolithography to obtain a source-drain electrode layer. Since the first via layer is provided in the second insulating layer, the source-drain electrode layer can be electrically connected to the active layer and the gate layer respectively, that is, the electrical connection line between the source-drain electrode layer and the active layer and the electrical connection line between the source-drain electrode layer and the gate layer are both located in the first via layer. It should be particularly emphasized that when the source-drain electrode layer is electrically connected to the active layer, the first via layer located in the first insulating layer and the first via layer located in the second insulating layer are in corresponding positions and are interconnected. Such a design can make the electrical connection line between the source-drain electrode layer and the active layer as short as possible, thereby optimizing the circuit layout.

[0058] Step S26, depositing on the source and drain electrode layers to form a third insulating layer on the source and drain electrode layers, and patterning the third insulating layer by photolithography to form a second via layer in the third insulating layer.

[0059] In this way, a third insulating layer is deposited on the source and drain layer, and the third insulating layer is patterned by photolithography. Similarly, a second via layer is formed in the third insulating layer. The second via layer has the same function as the first via layer, which is to achieve electrical connection of the hierarchical structure. It should be emphasized that the first insulating layer, the second insulating layer and the third insulating layer have the same function, that is, the insulating layer is specifically divided into the first insulating layer, the second insulating layer and the third insulating layer.

[0060] Step S27, depositing on the second via layer to form a metal film layer on the second via layer, and patterning the metal film layer on the second via layer by photolithography to obtain an anode layer, which is electrically connected to the source and drain layer through the second via layer.

[0061] In this way, a metal film layer is deposited on the second via layer, and the metal film layer is patterned by photolithography to obtain an anode layer, and the anode layer is electrically connected to the source and drain layers. At this point, the manufacture of the AMOLED display is basically completed.

[0062] Step S28, depositing on the anode layer to form a metal film layer on the anode layer, and patterning the metal film layer on the anode layer by photolithography to obtain a pixel definition layer.

[0063] In this way, the metal film layer above the anode layer is patterned by photolithography to obtain a pixel definition layer. The pixel definition layer plays the role of insulation isolation and is also designed to prevent circuit short circuits.

[0064] Therefore, through steps S21 to S28, an AMOLED display screen 10 as shown in FIG. 4 is manufactured, which includes, from bottom to top, a substrate 100, an active layer 200, a gate layer 300, a source-drain electrode layer 400, an anode layer 500 and a pixel definition layer 600. The active layer 200 and the gate layer 300, the gate layer 300 and the source-drain electrode layer 400, and the source-drain electrode layer 400 and the anode layer 500 are insulated and isolated by an insulating layer 700. The source-drain electrode layer 400 is electrically connected to the active layer 200 and the gate layer 300, respectively. A first via layer 800 is provided in the insulating layer 700 corresponding to the source-drain electrode layer 400 being electrically connected to the active layer 200 and the gate layer 300, respectively. The anode layer 500 can be electrically connected to the source-drain electrode layer 400. A second via layer 900 is provided in the insulating layer 700 corresponding to the anode layer 500 being electrically connected to the source-drain electrode layer 400.

[0065] Thus, in step S21 to step S28, the method of the present application uses a total of 7 light-shadow etchings, and the AMOLED display structure manufactured has one less metal film layer than the AMOLED display structure in the prior art. Figure 1 The reduced metal film layer corresponds to the storage capacitor layer 33. The AMOLED display screen in the prior art is manufactured by 8 photolithography processes. The method of the present application completes the manufacture of the AMOLED display screen 10 by reducing 1 photolithography process. The gate layer 300 and the source-drain electrode layer 400 in the AMOLED display screen 10 using 7 photolithography processes form a capacitor, which corresponds to the gate layer 32 and the source-drain electrode layer 34 in the AMOLED display screen using 8 photolithography processes. In this way, the storage capacitor layer 33 in the AMOLED display screen using 8 photolithography processes is reduced, that is, 1 photolithography process can be omitted to manufacture the storage capacitor layer 33. While ensuring the basic components of the AMOLED display screen, a layer of film structure is reduced, that is, the hierarchical structure of the AMOLED display screen is simplified, the loss of raw materials is effectively reduced, the production capacity is improved, and the overall manufacturing cost of the AMOLED display screen is reduced. In addition, since the process steps are streamlined, the defective rate of the AMOLED display screen is reduced by simplifying the process.

[0066] In addition, the source-drain electrode layer 400 in the AMOLED display screen 10 of the present application not only serves as a Data signal routing, but also serves as a connection layer to form the source-drain electrode of the TFT, and also serves as one of the electrodes of the capacitor, so that the source-drain electrode layer 400 is fully utilized.

[0067] Specifically, see Figure 4 In one embodiment, the insulating layer 700 is specifically divided into a first insulating layer 710, a second insulating layer 720 and a third insulating layer 730. The first insulating layer 710 is located between the active layer 200 and the gate layer 300, the second insulating layer 720 is located between the gate layer 300 and the source-drain electrode layer 400, and the third insulating layer 730 is located between the source-drain electrode layer 400 and the anode layer 500. A first via layer 800 is disposed in both the first insulating layer 710 and the second insulating layer 720, and a second via layer 900 is disposed in the third insulating layer 730.

[0068] In this way, it should be noted that the first insulating layer 710, the second insulating layer 720 and the third insulating layer 730 all play the role of insulating isolation. Due to the reduction of the film layer, the metal electrode layer forming the capacitor changes, and the thickness of the insulating layer 700 will be adjusted synchronously, which will cause the capacitance parameters to change. It is necessary to adjust the parameters such as the capacitor area and the dielectric constant of the insulating layer to match the capacitance value required by the circuit. The thickness range of the first insulating layer 710, the second insulating layer 720 and the third insulating layer 730 can be adjusted to fall within the range of 300 angstroms to 10 microns to complete the corresponding capacitance value adjustment. Angstroms are a unit of length measurement.

[0069] Furthermore, in one embodiment, before the active layer is formed on the substrate, a buffer layer and a semiconductor layer (not shown) are sequentially formed on the substrate, and the semiconductor layer is patterned by photolithography to form the active layer. In this way, the processed semiconductor layer is disposed on the buffer layer, and the active layer is disposed on the semiconductor layer, and the active layer is formed by patterning the polysilicon on the semiconductor.

[0070] The AMOLED display screen 10 manufactured by the above method is a LTPS circuit with a top-gate structure. If it is a driving circuit with a bottom-gate structure, it is also applicable to be manufactured by the method of the present application. Figure 5 The structure diagram of the bottom-gate structure of the AMOLED display screen 40 is shown, which includes a gate layer 41, a semiconductor layer 42, a source-drain electrode layer 43, an anode layer 44, and a pixel definition layer 45 from bottom to top. A first insulating layer 46 is provided between the gate layer 41 and the semiconductor layer 42, a second insulating layer 47 is provided between the semiconductor layer 42 and the source-drain electrode layer 43, a first via layer 40a is provided in both the first insulating layer 46 and the second insulating layer 47, a third insulating layer 49 is provided between the source-drain electrode layer 43 and the anode layer 44, and a second via layer 40b is provided in the third insulating layer 49. In this way, the bottom-gate structure AMOLED display screen 40 can also be manufactured by the present application through 7-pass photolithography.

[0071] The above-mentioned embodiments only express several embodiments of the present invention, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the attached claims.

Claims

1. A method for manufacturing an AMOLED display screen, characterized in that: include: Processing from bottom to top on the substrate to form an active layer, a gate layer, a source-drain electrode layer, an anode layer and a pixel definition layer, wherein the active layer and the gate layer, the gate layer and the source-drain electrode layer, and the source-drain electrode layer and the anode layer are insulated and isolated by an insulating layer; Confirming connection channels between the source and drain electrode layers and the active layer and the gate layer, respectively, and processing and forming a first via layer in the insulating layer corresponding to the connection channels, so that the source and drain electrode layers can be electrically connected to the active layer and the gate layer, respectively; Confirming an anode channel between the anode layer and the source-drain electrode layer, and processing and forming a second via layer in the insulating layer corresponding to the anode channel, so that the anode layer can be electrically connected to the source-drain electrode layer; The specific operations of this method are: Performing patterning on the substrate by photolithography to form the active layer; Depositing on the upper part of the active layer to form a first insulating layer on the upper part of the active layer; Depositing on the first insulating layer to form a metal film layer on the first insulating layer, and patterning the metal film layer on the first insulating layer by photolithography to obtain the gate layer; Depositing on the gate layer to form a second insulating layer on the gate layer; Performing patterning on the first insulating layer and the second insulating layer by using a photolithography method, so as to form the first via layer in the first insulating layer and the second insulating layer; Depositing above the first via layer to form a metal film layer above the first via layer, and patterning the metal film layer above the first via layer by photolithography to obtain the source and drain electrode layer, wherein the source and drain electrode layer is electrically connected to the active layer and the gate layer respectively through the first via layer; Depositing on the source and drain electrode layer to form a third insulating layer on the source and drain electrode layer, and patterning the third insulating layer by photolithography to form a second via layer in the third insulating layer; Depositing above the second via layer to form a metal film layer above the second via layer, and patterning the metal film layer above the second via layer by photolithography to obtain the anode layer, wherein the anode layer is electrically connected to the source and drain electrode layer through the second via layer; Depositing above the anode layer to form a metal film layer above the anode layer, and patterning the metal film layer above the anode layer by photolithography to obtain the pixel definition layer; Before forming the active layer on the substrate, a buffer layer and a semiconductor layer are sequentially formed on the substrate, and the semiconductor layer is patterned by photolithography to form the active layer.

2. An AMOLED display screen structure, comprising a substrate, characterized in that: It also includes an active layer, a gate layer, a source-drain electrode layer, an anode layer and a pixel definition layer from bottom to top on the substrate, wherein the active layer and the gate layer, the gate layer and the source-drain electrode layer, and the source-drain electrode layer and the anode layer are insulated and isolated by an insulating layer; The source-drain electrode layer is electrically connected to the active layer and the gate layer respectively, and a first via layer is provided in the insulating layer corresponding to the source-drain electrode layer being electrically connected to the active layer and the gate layer respectively; The anode layer can be electrically connected to the source-drain electrode layer, and a second via layer is provided in the insulating layer corresponding to the anode layer being electrically connected to the source-drain electrode layer; The insulating layer is specifically divided into a first insulating layer, a second insulating layer and a third insulating layer, the first insulating layer is located between the active layer and the gate layer, the second insulating layer is located between the gate layer and the source-drain electrode layer, the third insulating layer is located between the source-drain electrode layer and the anode layer, the first insulating layer and the second insulating layer are both provided with the first via layer, and the third insulating layer is provided with the second via layer; A buffer layer and a semiconductor layer are arranged on the substrate, the semiconductor layer is arranged on the buffer layer, and the active layer is arranged on the semiconductor layer.

3. The AMOLED display screen structure according to claim 2, characterized in that: The thickness of the first insulating layer, the second insulating layer and the third insulating layer are all in the range of 300 angstroms to 10 micrometers.

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