Pixel structure and preparation method thereof, and display panel

Abstract

The embodiments of the present application provide a pixel structure and a method for preparing the same, as well as a display panel. The pixel structure includes: at least two micro-light-emitting crystals are arranged on one side of a substrate; a dimming layer is arranged on one side of the substrate and each micro-light-emitting crystal, the dimming layer includes a first light-shielding structure, and a dimming structure corresponding to the micro-light-emitting crystal, each dimming structure includes a first color conversion structure, and each dimming structure also includes a second color conversion structure and / or a scattering structure; a filter layer is arranged on the side of the dimming layer away from the substrate; an electrode layer is arranged on the side of the substrate away from the dimming layer, and is electrically connected to each micro-light-emitting crystal. The embodiments of the present application provide at least two micro-light-emitting crystals and corresponding color conversion structures to jointly bear the force of grasping and placing during the transfer and preparation process, so that the force of the first color conversion is controlled within a safe range, reducing the risk of damage, thereby improving the yield rate of the pixel structure.

Description

Technical Field

[0001] The present application relates to the field of display technology, and more specifically, to a pixel structure and a method for preparing the same, and a display panel. Background Art

[0002] Due to the small chip size, high integration and self-luminescence of Micro-LED (MicroLight Emitting Diode), it has greater advantages in brightness, resolution, contrast, energy consumption, service life, response speed and thermal stability. In the process of preparing equipment including Micro-LED, tens of thousands of pixel structures need to be transferred to the array substrate.

[0003] However, during the transfer process, the color conversion structure of the pixel structure is easily damaged. Summary of the invention

[0004] In view of the shortcomings of the existing methods, the present application proposes a pixel structure and a preparation method thereof, and a display panel to solve the technical problem in the prior art that the color conversion structure of the pixel structure is easily damaged during the transfer process.

[0005] In the first aspect, an embodiment of the present application provides a pixel structure, comprising: at least two micro-light-emitting crystals, arranged on one side of a substrate; a dimming layer, arranged on one side of the substrate and each of the micro-light-emitting crystals, the dimming layer comprising a first shading structure, and a dimming structure corresponding to the micro-light-emitting crystal, each of the dimming structures comprising a first color conversion structure, each of the dimming structures also comprising a second color conversion structure and / or a scattering structure; a filter layer, arranged on a side of the dimming layer away from the substrate; an electrode layer, arranged on a side of the substrate away from the dimming layer, and electrically connected to each of the micro-light-emitting crystals.

[0006] Optionally, the micro-luminescent crystal grain includes: a stacked first semiconductor structure, a light-emitting structure and a second semiconductor structure, the second semiconductor structure is arranged on a side of the light-emitting structure away from the substrate; the electrode layer includes a first electrode and at least two second electrodes; the second semiconductor structure is electrically connected to the corresponding second electrode, and the first semiconductor structure of each micro-luminescent crystal grain is electrically connected to the same first electrode.

[0007] Optionally, the pixel structure also includes: a metal reflective structure; the substrate includes a first protective layer; the metal reflective structure is arranged on a side of the first protective layer away from the electrode layer, and the first semiconductor structure of each of the micro-light-emitting crystals is arranged on a side of the metal reflective structure away from the first protective layer; the metal reflective structure is electrically connected to the same first electrode.

[0008] Optionally, each of the micro-light-emitting crystal particles includes a common first semiconductor layer, each of the micro-light-emitting crystal particles includes a stacked light-emitting structure and a second semiconductor structure, and the light-emitting structure of each of the micro-light-emitting crystal particles is located on a side of the first semiconductor layer away from the substrate; the electrode layer includes a first electrode and at least two second electrodes; each of the second semiconductor structures is electrically connected to the corresponding second electrode, and the first semiconductor layer is electrically connected to the first electrode.

[0009] Optionally, the substrate comprises a reflective layer.

[0010] Optionally, the filter layer includes: a first encapsulation layer, a filter film, and a second encapsulation layer stacked in sequence; the second encapsulation layer is arranged on a side of the first encapsulation layer away from the dimming layer; the filter film includes a second shading structure and a first color resistance, and the filter film also includes a second color resistance and / or a third color resistance; the second shading structure corresponds to the first shading structure, the first color resistance corresponds to the first color conversion structure, the second color resistance corresponds to the second color conversion structure, and the third color resistance corresponds to the scattering structure.

[0011] Optionally, each of the dimming structures includes a first color conversion structure, a second color conversion structure and a scattering structure; the first color conversion structure and the scattering structure are arranged at intervals along a first direction, and the second color conversion structure and the scattering structure are arranged at intervals along a second direction.

[0012] Optionally, each of the dimming structures includes a first color conversion structure, a second color conversion structure and a scattering structure; the first color conversion structure and the second color conversion structure are spaced apart along a first direction; a straight line where a geometric center of the first color conversion structure and a geometric center of the second color conversion structure are located are spaced apart from the scattering structure along a second direction; a distance between the scattering structure and the first color conversion structure, and a spacing between the scattering structure and the second color conversion structure are the same.

[0013] Optionally, a distance from any one of the first color conversion structure, the second color conversion structure and the scattering structure to an edge of the pixel structure is not less than 15 micrometers.

[0014] Optionally, the distances from the first electrode and the second electrode to the edge of the pixel structure are not less than 15 micrometers.

[0015] Optionally, the pixel structure further includes: a curing layer, which is arranged on a side of the filter layer away from the substrate.

[0016] In the second aspect, an embodiment of the present application provides a display panel, comprising: an array substrate and a pixel structure as described in any one of the first aspect of the embodiments of the present application; the pixel structure is arranged on one side of the array substrate, and the electrode layer of the pixel structure is electrically connected to the electrode seat of the array substrate; the electrode seat is electrically connected to the thin film transistor of the array substrate.

[0017] In a third aspect, an embodiment of the present application provides a method for preparing a pixel structure described in any one of the items provided in the first aspect of the embodiment of the present application, comprising: preparing at least one intermediate pixel structure on one side of a substrate at the same time; the process of preparing the intermediate pixel structure comprises: preparing at least two micro-light-emitting crystals on one side of the substrate; preparing a dimming layer on one side of the substrate and each of the micro-light-emitting diode crystals; the dimming layer comprises the first shading structure and each of the dimming structures, each of the dimming structures comprises a first color conversion structure, and each of the dimming structures further comprises a second color conversion structure and / or a scattering structure; preparing a filter layer on a side of the dimming layer away from the substrate; after bonding the filter layer to the substrate, removing the substrate; preparing a base on a side of each of the micro-light-emitting diode crystals away from the dimming layer; preparing an electrode layer on a side of the substrate away from the dimming layer, and electrically connecting the electrode layer to each of the micro-light-emitting crystals to obtain the intermediate pixel structure; cutting out the intermediate pixel structure, releasing the bonding between the substrate and the filter layer of the intermediate pixel structure, and obtaining the pixel structure.

[0018] Optionally, at least two micro-light-emitting grains are prepared on one side of the substrate, including: preparing a first semiconductor structure, a light-emitting structure, and a second semiconductor structure in sequence at the designed position of each micro-light-emitting diode grain of the intermediate pixel structure on one side of the substrate; and preparing an electrode layer on a side of the substrate away from the dimming layer, and electrically connecting the electrode layer to each of the micro-light-emitting grains, including: preparing a first electrode and a second electrode on a side of the substrate of the intermediate pixel structure away from the dimming layer, and electrically connecting the first semiconductor structure of each of the micro-light-emitting grains of the intermediate pixel structure to the same first electrode, and electrically connecting the second semiconductor layer of each of the micro-light-emitting grains to the second electrode; the electrode layer includes the first electrode and at least two of the second electrodes.

[0019] Optionally, at least two micro-light-emitting grains are prepared on one side of the substrate, including: preparing a common first semiconductor structure within the design range of all the micro-light-emitting diode grains of the intermediate pixel structure on one side of the substrate; sequentially preparing a light-emitting structure and a second semiconductor structure at the design position of each of the micro-light-emitting diode grains on a side of the substrate away from the common first semiconductor structure; and preparing an electrode layer on a side of the substrate away from the dimming layer, and electrically connecting the electrode layer to each of the micro-light-emitting grains, including: preparing a first electrode and a second electrode on a side of the substrate of the intermediate pixel structure away from the dimming layer, and electrically connecting the common first semiconductor structure to one of the first electrodes, and electrically connecting the second semiconductor layer of each of the micro-light-emitting grains to the corresponding second electrode; the electrode layer includes the first electrode and at least two of the second electrodes.

[0020] Optionally, the pixel structure also includes a solidified layer; and releasing the bonding between the substrate and the filter layer of the intermediate pixel structure to obtain the pixel structure, including: after adhering a temporary protective film to the side of the electrode layer away from the base, releasing the bonding between the substrate and the filter layer of the intermediate pixel structure; after preparing a solidified layer on the side of the filter layer away from the temporary protective film, removing the temporary protective film to obtain the pixel structure.

[0021] The beneficial technical effects brought about by the technical solution provided by the embodiment of the present application include:

[0022] 1. By providing at least two micro-light-emitting crystal particles 20 and corresponding color conversion structures, the forces of grabbing and placing during the transfer and preparation process are jointly borne, so that the force of the first color conversion is controlled within a safe range, reducing the risk of damage, thereby improving the yield rate of the pixel structure.

[0023] 2. By rationally arranging the area of ​​the color conversion structure, the area of ​​the pixel structure, and the distribution of the color conversion structure in the pixel structure, it is possible to simultaneously ensure the maximum utilization of the pixel structure and the luminous efficiency.

[0024] Additional aspects and advantages of the present application will be partially given in the following description, which will become apparent from the following description, or will be understood through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The foregoing and / or additional aspects and advantages of the present application will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0026] Figure 1 A schematic diagram of the structure of a pixel provided in an embodiment of the present application;

[0027] Figure 2 A schematic diagram of the structure of a micro-light-emitting crystal particle in a pixel structure provided in an embodiment of the present application;

[0028] Figure 3 A schematic diagram of the structure of another micro-light-emitting crystal particle in a pixel structure provided in an embodiment of the present application;

[0029] Figure 4 A structural schematic diagram of the positional relationship between a reflective metal structure and a first protective layer in a pixel structure provided in an embodiment of the present application;

[0030] Figure 5 A schematic diagram of the structure of another type of micro-light-emitting crystal particle in another type of pixel structure provided in an embodiment of the present application;

[0031] Figure 6 A schematic structural diagram of the distribution of a first color conversion structure, a second color conversion structure, and a scattering structure in a pixel structure provided in an embodiment of the present application;

[0032] Figure 7 A schematic structural diagram of another distribution of the first color conversion structure, the second color conversion structure, and the scattering structure in another pixel structure provided in an embodiment of the present application;

[0033] Figure 8 A schematic diagram of a process for preparing a pixel structure provided in an embodiment of the present application;

[0034] Fig. 9 A schematic diagram of a specific process of step 100 in a method for preparing a pixel structure provided in an embodiment of the present application;

[0035] Fig.10 for Figure 6 A schematic flow chart of a specific method for preparing a pixel structure;

[0036] Fig.11 A schematic diagram of a film structure after sequentially preparing a first semiconductor structure, a light-emitting structure, and a second semiconductor structure at a designed position of each micro-light-emitting diode grain in a middle pixel structure on one side of a substrate in a specific method for preparing a pixel structure according to an embodiment of the present application;

[0037] Fig.12 A schematic diagram of a film structure after preparing a first light shielding structure on one side of a substrate and each micro-LED crystal grain in a specific method for preparing a pixel structure provided in an embodiment of the present application;

[0038] Fig.13In a specific method for preparing a pixel structure provided in an embodiment of the present application, each dimming structure is prepared on a side of each micro-LED crystal grain away from the substrate to obtain a schematic diagram of a film structure after a dimming layer is obtained;

[0039] Fig.14 In a specific method for preparing a pixel structure provided in an embodiment of the present application, a first encapsulation layer, a filter film, and a second encapsulation layer are sequentially prepared on a side of a dimming layer away from a substrate to obtain a schematic diagram of a film structure after the filter layer is obtained;

[0040] Fig.15 A schematic diagram of a film structure after bonding a filter layer to a substrate in a specific method for preparing a pixel structure provided in an embodiment of the present application;

[0041] Fig.16 A schematic diagram of a film structure after removing a substrate in a specific method for preparing a pixel structure provided in an embodiment of the present application;

[0042] Fig.17 A schematic diagram of a film structure after a substrate is prepared on a side of each micro-LED grain away from a dimming layer in a specific method for preparing a pixel structure provided in an embodiment of the present application;

[0043] Fig.18 In a specific method for preparing a pixel structure provided in an embodiment of the present application, a first electrode and a second electrode are prepared on a side of a substrate away from a dimming layer, and a first semiconductor structure of each micro-light-emitting crystal grain is electrically connected to the same first electrode, and a schematic diagram of a film structure after a second semiconductor layer of each micro-light-emitting crystal grain is electrically connected to a corresponding second electrode;

[0044] Fig.19 In a specific preparation method of a pixel structure provided in an embodiment of the present application, after a temporary protective film is attached to the side of the electrode layer away from the substrate, the bonding between the substrate and the filter layer of the intermediate pixel structure is released; after a solidified layer is prepared on the side of the filter layer away from the temporary protective film, the temporary protective film is removed to obtain a schematic diagram of the film layer structure after the pixel structure is obtained;

[0045] Fig. 20 for Figure 7 A schematic flow chart of a specific preparation method of another pixel structure;

[0046] Fig.21 In another specific preparation method of the pixel structure provided in the embodiment of the present application, a common first semiconductor structure is prepared at the design range of all micro-LED grains in the middle pixel structure on one side of the substrate; a schematic diagram of the film structure after sequentially preparing a light-emitting structure and a second semiconductor structure at the common first semiconductor structure away from the design position of each micro-LED grain on one side of the substrate;

[0047] Fig. 22 A schematic diagram of a film structure after preparing a first light shielding structure on one side of a substrate and each micro-LED crystal grain in another specific method for preparing a pixel structure provided in an embodiment of the present application;

[0048] Fig.23 In another specific preparation method of the pixel structure provided in the embodiment of the present application, each dimming structure is prepared on the side of each micro-LED grain away from the substrate to obtain a schematic diagram of the film structure after the dimming layer;

[0049] Fig.24 In another specific method for preparing a pixel structure provided in an embodiment of the present application, a first encapsulation layer, a filter film, and a second encapsulation layer are sequentially prepared on a side of the dimming layer away from the substrate to obtain a schematic diagram of the film layer structure after the filter layer is obtained;

[0050] Fig.25 A schematic diagram of a film structure after bonding a filter layer to a substrate in another specific method for preparing a pixel structure provided in an embodiment of the present application;

[0051] Fig.26 A schematic diagram of a film layer structure after removing a substrate in a specific method for preparing another pixel structure provided in an embodiment of the present application;

[0052] Fig. 27 A schematic diagram of a film structure after a substrate is prepared on a side of each micro-LED grain away from a dimming layer in a specific method for preparing another pixel structure provided in an embodiment of the present application;

[0053] Fig.28 In another specific method for preparing a pixel structure provided in an embodiment of the present application, a first electrode and a second electrode are prepared on a side of a substrate away from a dimming layer, and a schematic diagram of a film structure after a common first semiconductor structure is electrically connected to a first electrode, and a second semiconductor layer of each micro-light-emitting crystal grain is electrically connected to a corresponding second electrode;

[0054] Fig.29 In another specific preparation method of a pixel structure provided in an embodiment of the present application, after a temporary protective film is adhered to the side of the electrode layer away from the substrate, the bonding between the substrate of the intermediate pixel structure and the filter layer 40 is released; after a solidified layer is prepared on the side of the filter layer away from the temporary protective film, the temporary protective film is removed to obtain a schematic diagram of the membrane layer structure after the pixel structure is obtained.

[0055] Reference numerals and corresponding descriptions:

[0056] 10-substrate; 10a-first protective layer; 10b-reflective layer;

[0057] 20-micro light-emitting crystal particles; 21-first semiconductor structure; 22-light-emitting structure; 23-second semiconductor structure; 24-first semiconductor layer; 25-transparent electrode structure;

[0058] 30-dimming layer; 31-first light shielding structure; 32-first color conversion structure; 33-second color conversion structure; 34-scattering structure;

[0059] 40-filter layer; 41-first encapsulation layer; 42-filter film; 421-second light shielding structure; 422-first color resistance; 423-second color resistance; 424-third color resistance; 43-second encapsulation layer;

[0060] 50-electrode layer; 51-first electrode; 52-second electrode;

[0061] 60-Reflective metal structure;

[0062] 70-curing layer;

[0063] 80- second protective layer;

[0064] 90-buffer layer;

[0065] 100-Sapphire substrate. DETAILED DESCRIPTION

[0066] The present application is described in detail below, and examples of embodiments of the present application are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar components or components with the same or similar functions. In addition, if the detailed description of the known technology is unnecessary for the features of the present application shown, it will be omitted. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be interpreted as limiting the present application.

[0067] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those generally understood by those skilled in the art to which this application belongs. It should also be understood that terms such as those defined in general dictionaries should be understood to have meanings consistent with those in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless specifically defined as here.

[0068] Those skilled in the art will appreciate that, unless otherwise stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present application refers to the presence of the features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0069] The inventors of the present application have considered that the existing pixel structure includes only one micro-light-emitting crystal particle, and the color conversion structure material corresponding to the micro-light-emitting crystal particle is AlGaInP (aluminum gallium indium phosphide). The color conversion structure is relatively fragile and easily damaged during the process of grabbing and placing the pixel structure.

[0070] The pixel structure and its preparation method, and display panel provided in the present application are intended to solve the technical problem in the prior art that the color conversion structure of the pixel structure is easily damaged during the transfer process.

[0071] The technical solution of the present application and how the technical solution of the present application solves the aforementioned technical problems are described in detail below with specific embodiments.

[0072] The present application embodiment provides a pixel structure, such as Figure 1 As shown, it mainly includes at least two micro light-emitting crystal particles 20, a dimming layer 30, a filter layer 40 and an electrode layer 50.

[0073] At least two micro light-emitting crystal particles 20 are disposed on one side of the substrate 10 .

[0074] The dimming layer 30 is arranged on one side of the substrate 10 and each micro-light-emitting crystal particle 20. The dimming layer 30 includes a first shading structure 31 and a dimming structure corresponding to the micro-light-emitting crystal particle 20. Each dimming structure includes a first color conversion structure 32. Each dimming structure also includes a second color conversion structure 33 and / or a scattering structure 34.

[0075] The filter layer 40 is disposed on a side of the dimming layer 30 away from the substrate 10 ; the electrode layer 50 is disposed on a side of the substrate 10 away from the dimming layer 30 and is electrically connected to each micro-light-emitting crystal particle 20 .

[0076] Optionally, the micro light-emitting crystal grain 20 includes a micro light-emitting diode crystal grain. The micro light-emitting diode crystal grain includes a Micro LED (micro light-emitting diode) or a Mini LED (mini diode).

[0077] In a possible embodiment, an electrode layer 50 and three micro-light-emitting crystal particles 20 are respectively arranged on opposite sides of a substrate 10 of a pixel structure, and the three micro-light-emitting crystal particles 20 are respectively micro-light-emitting crystal particles of a first color, micro-light-emitting crystal particles of a second color, and micro-light-emitting crystal particles of a third color. The first color conversion structure 32 is arranged on the corresponding light-emitting side of the micro-light-emitting crystal particles of the first color, and the second color conversion structure 32 is arranged on the corresponding light-emitting side of the micro-light-emitting crystal particles of the second color. The first color conversion structure 32 and the second color conversion structure 33 are used to convert the light emitted by the micro-light-emitting crystal particles 20 into light of corresponding colors. The light emitted by the micro-light-emitting crystal particles 20 can be blue light, and the material of the color conversion structure can be a material that absorbs blue light and converts it into red light or green light. Among them, the material of the color conversion structure can be a quantum dot material, for example, it can be a quinone dihydropteridine reductase or a quantum dot ink; the thickness of all color conversion structures is not less than 15 microns and not more than 30 microns. The first color can be red, the second color can be green, and the third color can be blue. The range values ​​in the embodiments of the present application can all be taken as end values.

[0078] The scattering structure 34 is disposed on the light-emitting side corresponding to the third color micro-luminescent crystal grains. The scattering structure 34 may be a scattering particle layer that can scatter blue light to achieve white balance.

[0079] The dimming layer 30 includes a first light shielding structure 31 that surrounds three micro-light-emitting crystal particles 20. The material of the first light shielding structure 31 can be an organic light shielding material, and its thickness is not less than 15 microns and not more than 30 microns. Since the light of the first color conversion structure 32, the second color conversion structure 33 and the light of the scattering structure 34 are scattered in all directions, the first light shielding structure 31 can prevent light crosstalk and light leakage, thereby improving the display effect of the display device provided with the pixel structure.

[0080] In this embodiment, at least two micro-light-emitting crystal particles 20 and corresponding color conversion structures are provided to jointly bear the forces of grasping and placing during the transfer and preparation process, so that the force of the first color conversion is controlled within a safe range, reducing the risk of damage and thereby improving the yield rate of the pixel structure.

[0081] Alternatively, if Figure 2 As shown, the micro-light-emitting crystal grain 20 includes a stacked first semiconductor structure 21, a light-emitting structure 22, and a second semiconductor structure 23. The second semiconductor structure 23 is arranged on a side of the light-emitting structure 22 away from the substrate 10; the electrode layer 50 includes a first electrode 51 and at least two second electrodes 52; the second semiconductor structure 23 is electrically connected to the corresponding second electrode 52, and the first semiconductor structure 21 of each micro-light-emitting crystal grain 20 is electrically connected to the same first electrode 51.

[0082] In a possible embodiment, the material of the first semiconductor structure 21 may be N-GaN (N-type gallium nitride), the material of the light emitting structure 22 may be MQW (multiple quantum well), and the material of the second semiconductor structure 23 may be P-GaN (P-type gallium nitride). The first electrode 51 may be a cathode, and the second electrode 52 may be an anode. The materials of the first electrode 51 and the second electrode 52 may be chromium platinum gold or tin silver, and the thickness of the first electrode 51 and the second electrode 52 is not less than 5 microns. One micro-light emitting crystal grain 20 is connected to one anode, and all micro-light emitting crystal grains 20 share one cathode. This arrangement can reduce the occupied area of ​​the first electrode 51, thereby reducing the area of ​​the pixel structure.

[0083] Alternatively, if Figure 3 As shown, the micro light-emitting crystal particle 20 further includes a transparent electrode structure 25, which is disposed on a side of the second semiconductor structure 23 away from the light-emitting structure 22, and is electrically connected to the second electrode 52. The transparent electrode structure 25 may be indium tin oxide.

[0084] Alternatively, if Figure 4 As shown, Figure 4 for Figure 6 The pixel structure further includes a reflective metal structure 60; the substrate 10 includes a first protective layer 10a; the reflective metal structure 60 is arranged on a side of the first protective layer 10a away from the electrode layer 50, and the first semiconductor structure 21 of each micro-light-emitting crystal grain 20 is arranged on a side of the reflective metal structure 60 away from the first protective layer 10a; the reflective metal structure 60 is electrically connected to the same first electrode 51.

[0085] The material of the first protective layer 10a can be SiO x , the thickness of the first protective layer 10a may be not less than 450 micrometers and not more than 550 micrometers. Optionally, x is a real number not less than 1 and not more than 2.

[0086] All micro-light-emitting crystals 20 are arranged on the reflective metal structure 60, and the reflective metal structure 60 is used to reflect the light toward the reflective metal structure 60 to the dimming layer 30, so that more light reaches the first color conversion structure 32, the second color conversion structure 33 and / or the scattering structure 34, thereby improving the light utilization efficiency of the micro-light-emitting crystals 20. The material of the reflective metal structure 60 can be indium tin oxide, aluminum or titanium, and the thickness of the reflective metal structure 60 can be not less than 900 angstroms and not more than 1100 angstroms, for example, the thickness of the reflective metal structure 60 can be 1000 angstroms.

[0087] Alternatively, if Figure 5 As shown, Figure 5 for Figure 7 In the cross-sectional diagram along the Bb direction, each micro-light-emitting crystal particle 20 includes a common first semiconductor layer 24, each micro-light-emitting crystal particle 20 includes a stacked light-emitting structure 22 and a second semiconductor structure 23, and the light-emitting structure 22 of each micro-light-emitting crystal particle 20 is located on the side of the first semiconductor layer 24 away from the substrate 10; the electrode layer 50 includes a first electrode 51 and at least two second electrodes 52; each second semiconductor structure 23 is electrically connected to the corresponding second electrode 52, and the first semiconductor layer 24 is electrically connected to the first electrode 51.

[0088] Optionally, the substrate 10 includes a reflective layer 10b.

[0089] In a possible embodiment, the reflective layer 10b may be a distributed Bragg reflector, and its material may be SiO x or TiO2, the thickness of the distributed Bragg reflector is not less than 3 microns and not more than 3.5 microns. The distributed Bragg reflector is used to reflect the light toward the reflective metal structure 60 to the dimming layer 30, so that more light reaches the first color conversion structure 32, the second color conversion structure 33 and / or the scattering structure 34, thereby improving the light utilization efficiency of the micro-light-emitting crystal grain 20.

[0090] Alternatively, if Figure 1 As shown, the pixel structure further includes a second protective layer 80 , which is disposed between each micro-light-emitting crystal particle 20 and the substrate 10 , and the dimming layer 30 .

[0091] Alternatively, if Figure 1 As shown, the filter layer 40 includes a first encapsulation layer 41, a filter film 42 and a second encapsulation layer 43 stacked in sequence; the second encapsulation layer 43 is arranged on a side of the first encapsulation layer 41 away from the dimming layer 30; the filter film 42 includes a second shading structure 421 and a first color resist 422, and the filter film 42 also includes a second color resist 423 and / or a third color resist 424; the second shading structure 421 corresponds to the first shading structure 31, the first color resist 422 corresponds to the first color conversion structure 32, the second color resist 423 corresponds to the second color conversion structure 33, and the third color resist 424 corresponds to the scattering structure 34.

[0092] In a possible embodiment, the first encapsulation layer 41 may be a quantum dot inorganic encapsulation layer, and the material of the quantum dot inorganic encapsulation layer may be SiO x, and its thickness is about 1 micron. Optionally, the thickness of the quantum dot inorganic encapsulation layer is not less than 0.8 microns and not more than 1.2 microns. The second encapsulation layer 43 can be a quantum dot organic encapsulation layer, and the material of the quantum dot organic encapsulation layer can be an organic high-transmittance material, and its thickness is not less than 10 microns and not more than 25 microns. The second light-shielding structure 421 included in the filter film 42 can be a BM (BlackMatrix, black matrix), and all the color filters included in the filter film 42 can be color filters. The color filters correspond to the color conversion structure, which can avoid the problem of light leakage and color gamut reduction caused by the color conversion structure may not completely convert blue light, thereby meeting the display requirements. Among them, the first color resistance 422 corresponds to the first color conversion structure 32, the second color resistance 423 corresponds to the second color conversion structure 33, and the third color resistance 424 corresponds to the first color conversion structure 32. The first color resistance 422 can be a red filter, the second color resistance 423 can be a green filter, and the third color resistance 424 can be a blue filter.

[0093] In addition, the smaller the area of ​​the pixel structure, the greater the utilization rate, and the larger the light-emitting area of ​​the micro-LED, the greater the luminous efficiency. Under the general chip size, the luminous efficiency of the micro-LED is above 60%. However, when the pixel structure size is reduced to the micron level, the efficiency of the micro-LED will drop sharply to less than 1%. In order to maximize the utilization rate and luminous efficiency of the pixel structure at the same time, it is necessary to reasonably distribute the first color conversion structure 32, the second color conversion structure 33 and the scattering structure 34, and appropriately match the light-emitting area of ​​each color, the electrode area and the distance between the components. Such a setting can also achieve no cross-color between the color lights and achieve the purpose of high resolution.

[0094] The cross-sectional area of ​​the first color conversion structure 32, the second color conversion structure 33 and the scattering structure 34 in the direction perpendicular to the thickness is the light-emitting area. Under the conditions that the shapes of the cross-section and the pixel structure area are both square, the cross-section of the first electrode 51 and the second electrode 52 in the direction perpendicular to the thickness is a square, and the cross-sectional side length of the pixel structure is not greater than 243 mm, the sum of the cross-sectional areas of the first color conversion structure 32, the second color conversion structure 33 and the scattering structure 34 is not less than 400 square microns and not greater than 4000 square microns; the cross-sectional area of ​​the first electrode 51 and the second electrode 52 is not less than 900 square microns and not greater than 3600 square microns; the minimum distance between any two of the first color conversion structure 32, the second color conversion structure 33 and the scattering structure 34 is not less than 35 microns and not greater than 85 microns; the minimum distance between the edges of any adjacent electrodes is not less than 45 microns and not greater than 80 microns.

[0095] Optionally, the distance between any one of the first color conversion structure 32 , the second color conversion structure 33 and the scattering structure 34 and the edge of the pixel structure is not less than 15 micrometers.

[0096] Optionally, the distances from the first electrode 51 and the second electrode 52 to the edge of the pixel structure are not less than 15 micrometers.

[0097] Optionally, the cross-sectional area of ​​first color conversion structure 32 is 3600 square micrometers, the cross-sectional area of ​​first color conversion structure 32 is 2809 square micrometers, and the cross-sectional area of ​​scattering structure 34 is 1600 square micrometers.

[0098] Optionally, the cross-sectional area of ​​first color conversion structure 32 is 1600 square microns, the cross-sectional area of ​​first color conversion structure 32 is 1225 square microns, and the cross-sectional area of ​​scattering structure 34 is 400 square microns.

[0099] Optionally, the cross-sectional area of ​​the first electrode 51 or the second electrode 52 may be 900 square micrometers, 1600 square micrometers, 2500 square micrometers, or 3600 square micrometers.

[0100] In a possible embodiment, Figure 6 As shown, each dimming structure includes a first color conversion structure 32, a second color conversion structure 33 and a scattering structure 34; the first color conversion structure 32 and the scattering structure 34 are arranged at intervals along a first direction, and the second color conversion structure 33 and the scattering structure 34 are arranged at intervals along a second direction. The first direction is perpendicular to the second direction.

[0101] In a possible embodiment, Figure 7 As shown, each dimming structure includes a first color conversion structure 32, a second color conversion structure 33 and a scattering structure 34; the first color conversion structure 32 and the second color conversion structure 33 are spaced apart along the first direction; a straight line where the geometric center of the first color conversion structure 32 and the geometric center of the second color conversion structure 33 are located is spaced apart from the scattering structure 34 along the second direction; the distance between the scattering structure 34 and the first color conversion structure 32 and the spacing between the scattering structure 34 and the second color conversion structure 33 are the same.

[0102] The distribution of the first color conversion structure 32 , the second color conversion structure 33 and the scattering structure 34 on the pixel structure can be adjusted according to actual conditions in addition to the above two situations, and is not limited here.

[0103] Alternatively, if Figure 1 As shown, the pixel structure further includes a curing layer 70, and the curing layer 70 is disposed on a side of the filter layer 40 away from the substrate 10. The curing layer 70 in this embodiment can be formed by ultraviolet curing.

[0104] In the second aspect, the embodiment of the present application provides a display panel, which mainly includes an array substrate and a pixel structure provided by the aforementioned embodiment of the present application. The pixel structure is arranged on one side of the array substrate, and the electrode layer 50 of the pixel structure is electrically connected to the electrode seat of the array substrate; the electrode seat is electrically connected to the thin film transistor of the array substrate.

[0105] In a third aspect, the present application provides a method for preparing any one of the pixel structures provided in the first aspect of the present application, such as Figure 8 As shown, it mainly includes steps S100-S200:

[0106] Step S100: simultaneously preparing at least one intermediate pixel structure on one side of a substrate.

[0107] Step S200: cutting out the intermediate pixel structure, releasing the bonding between the substrate of the intermediate pixel structure and the filter layer 40, and obtaining the pixel structure.

[0108] The aforementioned step S100: simultaneously preparing at least one intermediate pixel structure on one side of the substrate, such as Fig. 9 As shown, steps S110-S160 are included:

[0109] Step S110: preparing at least two micro light-emitting crystal particles 20 on one side of the substrate.

[0110] Step S120: preparing a dimming layer 30 on one side of the substrate and each micro-LED die; the dimming layer 30 includes a first shading structure 31 and each dimming structure, each dimming structure includes a first color conversion structure 32, and each dimming structure also includes a second color conversion structure 33 and / or a scattering structure 34.

[0111] Step S130: preparing a filter layer 40 on a side of the light-adjusting layer 30 away from the substrate.

[0112] Step S140: After bonding the filter layer 40 to the substrate, remove the substrate.

[0113] Step S150 : preparing a substrate 10 on a side of each micro-LED die away from the dimming layer 30 .

[0114] Step S160: preparing an electrode layer 50 on a side of the substrate 10 away from the dimming layer 30 , and electrically connecting the electrode layer 50 to each micro light-emitting crystal grain 20 to obtain an intermediate pixel structure.

[0115] Optionally, the aforementioned step S110: preparing at least two micro-light-emitting grains 20 on one side of the substrate, including: preparing a first semiconductor structure 21, a light-emitting structure 22 and a second semiconductor structure 23 in sequence at the designed position of each micro-light-emitting diode grain in the middle pixel structure on one side of the substrate; and the aforementioned step S160: preparing an electrode layer 50 on the side of the substrate 10 away from the dimming layer 30, and electrically connecting the electrode layer 50 to each micro-light-emitting grain 20, including: preparing a first electrode 51 and a second electrode 52 on the side of the substrate 10 away from the dimming layer 30 of the middle pixel structure, and making the first semiconductor structure 21 of each micro-light-emitting grain 20 in the middle pixel structure electrically connected to the same first electrode 51, and the second semiconductor layer of each micro-light-emitting grain 20 electrically connected to the second electrode 52; the electrode layer 50 includes a first electrode 51 and at least two second electrodes 52.

[0116] Optionally, the aforementioned step S110: preparing at least two micro-light-emitting grains 20 on one side of the substrate, including: preparing a common first semiconductor structure 21 at the design range of all micro-light-emitting diode grains in the middle pixel structure on one side of the substrate; sequentially preparing a light-emitting structure 22 and a second semiconductor structure 23 at the design position of each micro-light-emitting diode grain on the side of the substrate away from the common first semiconductor structure 21; and the aforementioned step S160: preparing an electrode layer 50 on the side of the substrate 10 away from the dimming layer 30, and electrically connecting the electrode layer 50 to each micro-light-emitting grain 20, including: preparing a first electrode 51 and a second electrode 52 on the side of the substrate 10 away from the dimming layer 30 of the middle pixel structure, and electrically connecting the common first semiconductor structure 21 to a first electrode 51, and electrically connecting the second semiconductor layer of each micro-light-emitting grain 20 to the corresponding second electrode 52; the electrode layer 50 includes a first electrode 51 and at least two second electrodes 52.

[0117] Optionally, the pixel structure also includes a solidified layer 70; and in the aforementioned step S200: releasing the bonding between the substrate of the intermediate pixel structure and the filter layer 40 to obtain the pixel structure, including: after adhering a temporary protective film to the side of the electrode layer 50 away from the substrate 10, releasing the bonding between the substrate of the intermediate pixel structure and the filter layer 40; after preparing the solidified layer 70 on the side of the filter layer 40 away from the temporary protective film, removing the temporary protective film to obtain the pixel structure.

[0118] Optionally, step S120: preparing a dimming layer 30 on one side of the substrate and each micro-LED grain, including: preparing a first shading structure 31 on one side of the substrate and each micro-LED grain; patterning the first shading structure 31 to obtain the first shading structure 31, and exposing each micro-LED grain outside the first shading structure 31; preparing each dimming structure on a side of each micro-LED grain away from the substrate to obtain a dimming layer 30.

[0119] Optionally, the method for preparing the pixel structure also includes: preparing a second protective layer 80 on a side of the substrate 10 away from the electrode layer 50, a side of each micro-light-emitting crystal particle 20 away from the substrate 10, and a side surface of each micro-light-emitting crystal particle 20, and preparing a dimming layer 30 on a side of the second protective layer 80 away from the substrate 10 and each micro-light-emitting crystal particle 20 away from the substrate 10.

[0120] Optionally, the aforementioned step S130: preparing a filter layer 40 on a side of the dimming layer 30 away from the substrate includes: preparing a first encapsulation layer 41 on a side of the dimming layer 30 away from the substrate, preparing a second light shielding layer on a side of the first encapsulation layer 41 away from the dimming layer 30, and patterning the second light shielding layer to obtain a second light shielding structure 421, so that the second light shielding structure 421 corresponds to the first light shielding structure 31, and a portion of the first encapsulation layer 41 corresponding to each micro light emitting diode grain is exposed to the second light shielding structure. structure 421; on the side of the first packaging layer 41 away from each micro-light-emitting diode grain, a first color resist 422 is prepared, and a second color resist 423 and / or a third color resist 424 are prepared to obtain a filter film 42, so that the first color resist 422 corresponds to the first color conversion structure 32, the second color resist 423 corresponds to the second color conversion structure 33, and the third color resist 424 corresponds to the scattering structure 34; a second packaging layer 43 is prepared on the side of the filter film 42 away from the first packaging layer 41 to obtain a filter layer 40.

[0121] Optionally, the method for preparing the pixel structure further includes: preparing a transparent electrode layer 50 on a side of the second semiconductor structure 23 away from the light emitting structure 22 , patterning the transparent electrode layer 50 to obtain a transparent electrode structure 25 , and electrically connecting the transparent electrode structure 25 to the second electrode 52 .

[0122] Optionally, the method for preparing the pixel structure further includes: preparing a transparent electrode layer 50 on a side of the second semiconductor layer away from the light emitting structure 22 , patterning the transparent electrode layer 50 to obtain a transparent electrode structure 25 , and electrically connecting the transparent electrode structure 25 to the second electrode 52 .

[0123] The following corresponds to Figure 6 The pixel structure shown in the figure, the embodiment of the present application provides a specific method for preparing the pixel structure, and the flow chart of the specific preparation method is as follows Fig.10As shown, the following steps S301-S309 are included:

[0124] Step S301: at the designed position of each micro-LED die in the middle pixel structure on one side of the substrate, a first semiconductor structure 21, a light emitting structure 22 and a second semiconductor structure 23 are sequentially prepared.

[0125] The film structure obtained after step S301 is as follows Fig.11 The second protective layer 80 is formed on the side of the buffer layer 90 away from the sapphire substrate 100 , the side of each micro-light-emitting crystal grain 20 away from the buffer layer 90 , and the side surface of each micro-light-emitting crystal grain 20 .

[0126] Step S302 : preparing a first light shielding structure 31 on one side of the substrate and each micro-LED die; patterning the first light shielding structure 31 to obtain the first light shielding structure 31 , and exposing each micro-LED die 20 outside the first light shielding structure 31 .

[0127] The film structure obtained after step S302 is as follows Fig.12 shown.

[0128] Step S303 : preparing each dimming structure on the side of each micro-LED die away from the substrate to obtain a dimming layer 30 .

[0129] The film structure obtained after step S303 is as follows Fig.13 shown.

[0130] Step S304: preparing a first encapsulation layer 41 on a side of the dimming layer 30 away from the substrate, preparing a second light-shielding layer on a side of the first encapsulation layer 41 away from the dimming layer 30, and patterning the second light-shielding layer to obtain a second light-shielding structure 421, so that the second light-shielding structure 421 corresponds to the first light-shielding structure 31, and a portion of the first encapsulation layer 41 corresponding to each micro-LED grain is exposed outside the second light-shielding structure 421; preparing a first color resist 422 on a side of the first encapsulation layer 41 away from each micro-LED grain, and preparing a second color resist 423 and / or a third color resist 424 to obtain a filter film 42, so that the first color resist 422 corresponds to the first color conversion structure 32, the second color resist 423 corresponds to the second color conversion structure 33, and the third color resist 424 corresponds to the scattering structure 34; preparing a second encapsulation layer 43 on a side of the filter film 42 away from the first encapsulation layer 41 to obtain a filter layer 40.

[0131] The film structure obtained after step S304 is as follows Fig.14 shown.

[0132] Step S305: bonding the filter layer 40 to the substrate.

[0133] The film structure obtained after step S305 is as follows Fig.15 shown.

[0134] Step S306: removing the substrate.

[0135] The film structure obtained after step S306 is as follows Fig.16 shown.

[0136] Step S307 : preparing a substrate 10 on a side of each micro-LED die away from the dimming layer 30 .

[0137] The film structure obtained after step S307 is as follows Fig.17 shown.

[0138] Step S308: Prepare a first electrode 51 and a second electrode 52 on the side of the substrate 10 of the intermediate pixel structure away from the dimming layer 30, and make the first semiconductor structure 21 of each micro-light-emitting crystal grain 20 of the intermediate pixel structure electrically connected to the same first electrode 51, and the second semiconductor layer of each micro-light-emitting crystal grain 20 electrically connected to the second electrode 52; the electrode layer 50 includes a first electrode 51 and at least two second electrodes 52.

[0139] The film structure obtained after step S308 is as follows Fig.18 shown.

[0140] Step S309: After a temporary protective film is attached to the side of the electrode layer 50 away from the substrate 10, the bonding between the substrate of the intermediate pixel structure and the filter layer 40 is released; after a solidified layer 70 is prepared on the side of the filter layer 40 away from the temporary protective film, the temporary protective film is removed to obtain a pixel structure.

[0141] The film structure obtained after step S309 is as follows Fig.19 shown.

[0142] The following corresponds to Figure 7 The pixel structure shown in the figure, the embodiment of the present application provides a specific method for preparing the pixel structure, and the flow chart of the specific preparation method is as follows Fig. 20 As shown, the following steps S401-S408 are included:

[0143] Step S401: preparing a common first semiconductor structure 21 within the design range of all micro-LED grains of the middle pixel structure on one side of the substrate; and sequentially preparing a light-emitting structure 22 and a second semiconductor structure 23 at a position of the common first semiconductor structure 21 away from the design position of each micro-LED grain on one side of the substrate.

[0144] The film structure obtained after step S401 is as follows Fig.21The second protective layer 80 is formed on the side of the buffer layer 90 away from the sapphire substrate 100 , the side of each micro-light-emitting crystal grain 20 away from the buffer layer 90 , and the side surface of each micro-light-emitting crystal grain 20 .

[0145] Step S402 : preparing a first light shielding structure 31 on one side of the substrate and each micro-LED die; patterning the first light shielding structure 31 to obtain the first light shielding structure 31 , and exposing each micro-LED die outside the first light shielding structure 31 .

[0146] The film structure obtained after step S402 is as follows Fig. 22 shown.

[0147] Step S403 : preparing each dimming structure on the side of each micro-LED die away from the substrate to obtain a dimming layer 30 .

[0148] The film structure obtained after step S403 is as follows Fig.23 shown.

[0149] Step S404: preparing a first encapsulation layer 41 on a side of the dimming layer 30 away from the substrate, preparing a second light-shielding layer on a side of the first encapsulation layer 41 away from the dimming layer 30, and patterning the second light-shielding layer to obtain a second light-shielding structure 421, so that the second light-shielding structure 421 corresponds to the first light-shielding structure 31, and a portion of the first encapsulation layer 41 corresponding to each micro-LED grain is exposed outside the second light-shielding structure 421; preparing a first color resist 422 on a side of the first encapsulation layer 41 away from each micro-LED grain, and preparing a second color resist 423 and / or a third color resist 424 to obtain a filter film 42, so that the first color resist 422 corresponds to the first color conversion structure 32, the second color resist 423 corresponds to the second color conversion structure 33, and the third color resist 424 corresponds to the scattering structure 34; preparing a second encapsulation layer 43 on a side of the filter film 42 away from the first encapsulation layer 41 to obtain a filter layer 40.

[0150] The film structure obtained after step S404 is as follows Fig.24 shown.

[0151] Step S405: bonding the filter layer 40 to the substrate.

[0152] The film structure obtained after step S405 is as follows Fig.25 shown.

[0153] Step S406: removing the substrate.

[0154] The film structure obtained after step S406 is as follows Fig.26 shown.

[0155] Step S407 : preparing a substrate 10 on a side of each micro-LED die away from the dimming layer 30 .

[0156] The film structure obtained after step S407 is as follows Fig. 27 shown.

[0157] Step S408: Prepare a first electrode 51 and a second electrode 52 on the side of the substrate 10 of the intermediate pixel structure away from the dimming layer 30, and make the common first semiconductor structure 21 electrically connected to one first electrode 51, and the second semiconductor layer of each micro-light-emitting crystal particle 20 electrically connected to the corresponding second electrode 52; the electrode layer 50 includes a first electrode 51 and at least two second electrodes 52.

[0158] The film structure obtained after step S408 is as follows Fig.28 shown.

[0159] Step S409: After a temporary protective film is attached to the side of the electrode layer 50 away from the substrate 10, the bonding between the substrate of the intermediate pixel structure and the filter layer 40 is released; after a solidified layer 70 is prepared on the side of the filter layer 40 away from the temporary protective film, the temporary protective film is removed to obtain a pixel structure.

[0160] The film structure obtained after step S409 is as follows Fig.29 shown.

[0161] In the aforementioned preparation method provided in the embodiment of the present disclosure, the composition process involved in forming each layer structure may include not only part or all of the process steps such as deposition, photoresist coating, mask template masking, exposure, development, etching, photoresist stripping, etc., but may also include other process steps. The specific process steps shall be based on the graphics and processes for forming the required composition in the actual production process and are not limited here.

[0162] By applying the embodiments of the present application, at least the following beneficial effects can be achieved:

[0163] 1. By providing at least two micro-light-emitting crystal particles 20 and corresponding color conversion structures, the forces of grabbing and placing during the transfer and preparation process are jointly borne, so that the force of the first color conversion is controlled within a safe range, reducing the risk of damage, thereby improving the yield rate of the pixel structure.

[0164] 2. By rationally arranging the area of ​​the color conversion structure, the area of ​​the pixel structure, and the distribution of the color conversion structure in the pixel structure, it is possible to simultaneously ensure the maximum utilization of the pixel structure and the luminous efficiency.

[0165] Those skilled in the art will appreciate that the various operations, methods, steps, measures, and schemes in the processes discussed in this application may be alternated, altered, combined, or deleted. Further, other steps, measures, and schemes in the various operations, methods, and processes discussed in this application may also be alternated, altered, rearranged, decomposed, combined, or deleted. Further, the steps, measures, and schemes in the prior art that are similar to those disclosed in this application may also be alternated, altered, rearranged, decomposed, combined, or deleted.

[0166] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0167] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0168] It should be understood that, although the steps in the flowchart of the accompanying drawings are displayed in sequence as indicated by the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least a part of the steps in the flowchart of the accompanying drawings may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and their execution order is not necessarily sequential, but can be executed in turn or alternately with other steps or at least a part of the sub-steps or stages of other steps.

[0169] The above description is only a partial implementation method of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. A pixel structure, characterized in that: include: At least two micro light-emitting crystal particles are arranged on one side of the substrate; A dimming layer is arranged on one side of the substrate and each of the micro-light-emitting crystal particles, the dimming layer includes a first light-shielding structure and a dimming structure corresponding to the micro-light-emitting crystal particle, each of the dimming structures includes a first color conversion structure, and each of the dimming structures also includes a second color conversion structure and / or a scattering structure; A filter layer, disposed on a side of the light-adjusting layer away from the substrate; The electrode layer is arranged on a side of the substrate away from the dimming layer and is electrically connected to each of the micro light-emitting crystal particles.

2. The pixel structure according to claim 1, characterized in that: The micro light-emitting crystal particle comprises: a stacked first semiconductor structure, a light-emitting structure, and a second semiconductor structure. The second semiconductor structure is arranged on a side of the light emitting structure away from the substrate; The electrode layer includes a first electrode and at least two second electrodes; The second semiconductor structure is electrically connected to the corresponding second electrode, and the first semiconductor structure of each of the micro-light-emitting crystal particles is electrically connected to the same first electrode.

3. The pixel structure according to claim 2, characterized in that: Also includes: Metal reflective structure; The substrate includes a first protective layer; The metal reflective structure is arranged on a side of the first protective layer away from the electrode layer, and the first semiconductor structure of each of the micro-light-emitting crystal particles is arranged on a side of the metal reflective structure away from the first protective layer; The metal reflective structure is electrically connected to the same first electrode.

4. The pixel structure according to claim 1, characterized in that: Each of the micro-light-emitting crystal particles comprises a common first semiconductor layer, each of the micro-light-emitting crystal particles comprises a stacked light-emitting structure and a second semiconductor structure, and the light-emitting structure of each of the micro-light-emitting crystal particles is located on a side of the first semiconductor layer away from the substrate; The electrode layer includes a first electrode and at least two second electrodes; Each of the second semiconductor structures is electrically connected to the corresponding second electrode, and the first semiconductor layer is electrically connected to the first electrode.

5. The pixel structure according to claim 4, characterized in that: The substrate includes a reflective layer.

6. The pixel structure according to claim 1, characterized in that: The filter layer comprises: a first packaging layer, a filter film and a second packaging layer stacked in sequence; The second encapsulation layer is arranged on a side of the first encapsulation layer away from the dimming layer; The filter film includes a second light-shielding structure and a first color resistor, and the filter film also includes a second color resistor and / or a third color resistor; the second light-shielding structure corresponds to the first light-shielding structure, the first color resistor corresponds to the first color conversion structure, the second color resistor corresponds to the second color conversion structure, and the third color resistor corresponds to the scattering structure.

7. The pixel structure according to claim 1, characterized in that: Each of the dimming structures includes a first color conversion structure, a second color conversion structure and a scattering structure; The first color conversion structure and the scattering structure are arranged at intervals along a first direction, and the second color conversion structure and the scattering structure are arranged at intervals along a second direction.

8. The pixel structure according to claim 1, characterized in that: Each of the dimming structures includes a first color conversion structure, a second color conversion structure and a scattering structure; The first color conversion structure and the second color conversion structure are arranged at intervals along a first direction; A straight line where the geometric center of the first color conversion structure and the geometric center of the second color conversion structure are located is spaced apart from the scattering structure along a second direction; The distance between the scattering structure and the first color conversion structure is the same as the spacing between the scattering structure and the second color conversion structure.

9. The pixel structure according to claim 7 or 8, characterized in that: The distance from any one of the first color conversion structure, the second color conversion structure and the scattering structure to the edge of the pixel structure is not less than 15 micrometers.

10. The pixel structure according to any one of claims 2 to 5, characterized in that: The distances between the first electrode and the second electrode and the edge of the pixel structure are not less than 15 micrometers.

11. The pixel structure according to claim 1, characterized in that: Also includes: The solidified layer is arranged on a side of the filter layer away from the substrate.

12. A display panel, characterized in that: include: An array substrate and a pixel structure as claimed in any one of claims 1 to 11; The pixel structure is arranged on one side of the array substrate, the electrode layer of the pixel structure is electrically connected to the electrode seat of the array substrate; and the electrode seat is electrically connected to the thin film transistor of the array substrate.

13. A method for preparing a pixel structure according to any one of claims 1 to 11, characterized in that: include: simultaneously preparing at least one intermediate pixel structure on one side of the substrate; The process of preparing the intermediate pixel structure includes: Prepare at least two micro light-emitting crystal particles on one side of the substrate; A dimming layer is prepared on one side of the substrate and each of the micro-LED grains; the dimming layer includes the first light-shielding structure and each of the dimming structures, each of the dimming structures includes a first color conversion structure, and each of the dimming structures also includes a second color conversion structure and / or a scattering structure; A filter layer is prepared on a side of the dimming layer away from the substrate; After bonding the filter layer to the substrate, removing the substrate; On a side of each of the micro-LED grains away from the dimming layer, a substrate is prepared; On a side of the substrate away from the dimming layer, an electrode layer is prepared, and the electrode layer is electrically connected to each of the micro light-emitting crystal particles to obtain the intermediate pixel structure; The intermediate pixel structure is cut out, and the bonding between the substrate and the filter layer of the intermediate pixel structure is released to obtain the pixel structure.

14. The method for preparing a pixel structure according to claim 13, characterized in that: At least two micro light-emitting crystal particles are prepared on one side of the substrate, including: At the designed position of each micro-LED grain of the intermediate pixel structure on one side of the substrate, a first semiconductor structure, a light-emitting structure, and a second semiconductor structure are sequentially prepared; And, an electrode layer is prepared on a side of the substrate away from the dimming layer, and the electrode layer is electrically connected to each of the micro light-emitting crystal particles, including: A first electrode and a second electrode are prepared on a side of the substrate of the intermediate pixel structure away from the dimming layer, so that the first semiconductor structure of each micro-light-emitting crystal grain of the intermediate pixel structure is electrically connected to the same first electrode, and the second semiconductor layer of each micro-light-emitting crystal grain is electrically connected to the second electrode; the electrode layer includes the first electrode and at least two of the second electrodes.

15. The method for preparing a pixel structure according to claim 13, characterized in that: At least two micro light-emitting crystal particles are prepared on one side of the substrate, including: Prepare a common first semiconductor structure at the design range of all the micro-LED grains of the intermediate pixel structure on one side of the substrate; Sequentially preparing a light emitting structure and a second semiconductor structure at a designed position of each of the micro-LED grains on a side of the common first semiconductor structure away from the substrate; And, an electrode layer is prepared on a side of the substrate away from the dimming layer, and the electrode layer is electrically connected to each of the micro light-emitting crystal particles, including: A first electrode and a second electrode are prepared on a side of the substrate of the intermediate pixel structure away from the dimming layer, and the common first semiconductor structure is electrically connected to one of the first electrodes, and the second semiconductor layer of each of the micro-light-emitting crystal particles is electrically connected to the corresponding second electrode; the electrode layer includes the first electrode and at least two of the second electrodes.

16. The method for preparing a pixel structure according to claim 13, characterized in that: The pixel structure further includes a curing layer; And, releasing the bonding between the substrate and the filter layer of the intermediate pixel structure to obtain the pixel structure, comprising: After a temporary protective film is attached to the side of the electrode layer away from the substrate, releasing the bonding between the substrate and the filter layer of the intermediate pixel structure; After preparing a solidified layer on the side of the filter layer away from the temporary protective film, the temporary protective film is removed to obtain the pixel structure.

Images