Power Module

Abstract

A power module is provided that can utilize the advantages of stacking a plurality of elements and can reduce the adverse effects of a shunt voltage on a control element without using a complex structure. A second semiconductor switch element (141b) is connected in series with a first semiconductor switch element (141a) and is at least partially stacked with the first semiconductor switch element (141a) in the thickness direction. A first control element (102) controls the first semiconductor switch element (141a) and the second semiconductor switch element (141b) and performs an overcurrent protection operation with reference to the shunt voltage. The first control element (102) is arranged to be offset from the first semiconductor switch element (141a) and the second semiconductor switch element (141b) in the in-plane direction.

Description

Technical Field

[0001] The present invention relates to a power module, and in particular, to a power module including a first control element for controlling a first semiconductor switch element and a second semiconductor switch element. Background Art

[0002] Japanese Patent Publication No. 2005-277014 (Patent Document 1) discloses a semiconductor device for causing a load to operate. The semiconductor device comprises a first support plate, a first semiconductor switch element on the first support plate, a second support plate on the first semiconductor switch element, a second semiconductor switch element on the second support plate, a third support plate on the second semiconductor switch element, and a control element on the third support plate. The first semiconductor switch element and the second semiconductor switch element are connected in series with each other. When in operation, the first support plate is connected to the positive terminal of a DC power supply, and the third support plate is connected to the ground terminal of the DC power supply. The third support plate can serve as a ground electrode of the control element. The control element gives a control signal to the first semiconductor switch element and the second semiconductor switch element, so that the first semiconductor switch element and the second semiconductor switch element perform on-off operations alternately.

[0003] By stacking a plurality of elements in the thickness direction as described above, various advantages can be obtained. For example, the planar size of the semiconductor device can be reduced. In addition, the wiring structure between the elements can be simplified.

[0004] Japanese Patent Publication No. 2020-014315 (Patent Document 2) discloses a power semiconductor element. The power semiconductor element has: a high potential side switch element; a load side switch element connected in series with the high potential side switch element; a high potential side control circuit that controls the on-off drive of the high potential side switch element; a low potential side control circuit that controls the on-off drive of the low potential side switch element; and a current detection circuit. The current flowing through the low potential side switch element is converted into a shunt voltage through a shunt resistor connected between the load side switch element and a line with a reference potential. When the shunt voltage exceeds a preset threshold, the current detection circuit detects that an overcurrent has been generated and sends an overcurrent detection signal to the drive circuit. If the drive circuit receives an overcurrent detection signal, the low potential side switch element is disconnected. Thus, an overcurrent protection action can be performed.

[0005] Patent Document 1: Japanese Patent Application Publication No. 2005-277014

[0006] Patent Document 2: Japanese Patent Application Publication No. 2020-014315

[0007] In the technology of the above-mentioned Japanese Patent Publication No. 2005-277014, the potential of the reference potential side (the opposite side to the connection side of the first semiconductor switch element as the high potential side switch element) of the second semiconductor switch element as the low potential side switch element is equal to the potential of the third support plate. On the other hand, the reference potential of the control element is also equal to the potential of the third support plate. Therefore, the potential of the reference potential side of the low potential side switch element is equal to the reference potential of the control element. Therefore, if a shunt resistor is installed between the reference potential side of the low potential side switch element and the reference potential, the reference potential of the control element also changes in accordance with the change of the shunt voltage. Due to this potential change, an excessive current flows through the wiring of the control element, thereby sometimes causing thermal damage. The generation of this current is avoided by using a floating power supply as a power supply for driving the control element. However, the use of a floating power supply will complicate the circuit of the semiconductor device. In order to avoid such a complicated problem, when a shunt resistor is used, a structure in which the reference potential side of the low potential side switch element and the reference potential part of the control element are not short-circuited is usually used. Summary of the invention

[0008] According to the research of the inventors, even when the above-mentioned structure is used, when all the multiple elements are stacked, the change of the shunt voltage causes the change of the reference potential of the control element through the capacitive coupling between the elements. The magnitude of this potential change needs to be suppressed to a level that can fully avoid the problem of thermal damage mentioned above. This will result in the size of the current that the semiconductor device can generate being limited. The present invention is proposed to solve the above-mentioned problems, and its purpose is to provide a power module that can utilize the advantages brought by stacking multiple elements and reduce the adverse effects of the shunt voltage on the control element without using a complex structure.

[0009] The power module of the present invention has a thickness direction and an in-plane direction perpendicular to the thickness direction. The power module has a first semiconductor switch element, a second semiconductor switch element and a first control element. The second semiconductor switch element is connected in series with the first semiconductor switch element, and the second semiconductor switch element is at least partially stacked with the first semiconductor switch element in the thickness direction. The first control element controls the first semiconductor switch element and the second semiconductor switch element, and performs an overcurrent protection action with reference to a shunt voltage. The first control element is arranged to be offset from the first semiconductor switch element and the second semiconductor switch element in the in-plane direction.

[0010] Effects of the Invention

[0011] According to the present invention, the second semiconductor switch element is at least partially stacked with the first semiconductor switch element. Thus, the advantages brought about by stacking a plurality of elements can be utilized. On the other hand, the first control element is configured to be offset from the first semiconductor switch element and the second semiconductor switch element in the in-plane direction. In other words, the first control element is not stacked with the first semiconductor switch element and the second semiconductor switch element. The potentials of the first semiconductor switch element and the second semiconductor switch element change in accordance with the shunt voltage, but according to the above configuration, the change is suppressed from causing the reference potential of the first control element to change via capacitive coupling. Therefore, the adverse effects of the shunt voltage on the control element can be reduced without using a complex structure. In summary, the advantages brought about by stacking a plurality of elements can be utilized, and the adverse effects of the shunt voltage on the control element can be reduced without using a complex structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a diagram schematically showing the configuration of a system including the power module according to the first embodiment.

[0013] Figure 2 It roughly indicates Figure 1 A top view of the structure of the power module and the shunt resistor.

[0014] Figure 3 yes Figure 2 A schematic side view of the viewpoint of arrow III.

[0015] Figure 4 It is a diagram schematically showing the configuration of a system including a power module of a comparative example.

[0016] Figure 5 It is a plan view schematically showing the structures of a power module and a shunt resistor according to the second embodiment.

[0017] Figure 6 It is a plan view schematically showing the structure of a power module according to the third embodiment. DETAILED DESCRIPTION

[0018] In the following drawings, the embodiments are described based on the drawings. In addition, in the following drawings, the same reference numerals are given to the same or corresponding parts, and their description will not be repeated.

[0019] <Implementation method 1>

[0020] Figure 1 1 is a diagram schematically showing a configuration of a system 701 . The system 701 includes a load 900 according to the first embodiment and a load driving device 601 that drives the load 900 . Figure 2is a top view schematically showing the structure of the load driving device 601. Figure 3 It is arrow III ( Figure 2 ) is a schematic side view from a viewpoint of FIG. The load driving device 601 includes a power module 501 and a shunt resistor 3. Figure 2 and Figure 3 , an XYZ rectangular coordinate system is shown, the Z direction of the coordinate system corresponds to the thickness direction of the power module 501, and the XY direction of the coordinate system corresponds to the in-plane direction of the power module 501 that is perpendicular to the thickness direction.

[0021] The power module 501 includes a high potential side switch element 141a (first semiconductor switch element), a low potential side switch element 141b (second semiconductor switch element), and a control element 102 (first control element). In addition, the power module 501 includes a housing 9, a metal plate 121 (first metal plate), a metal plate 122 (second metal plate), a metal plate 123 (third metal plate), and a metal plate 124 (fourth metal plate).

[0022] The low potential side switch element 141b is connected in series with the high potential side switch element 141a. The high potential side switch element 141a and the low potential side switch element 141b are switch elements such as MISFET (Metal Insulator Semiconductor Field Effect Transistor) or IGBT (Insulated Gate Bipolar Transistor). Figure 1 As shown, the switch element may be loaded with a freewheeling diode by being built-in or external. The high potential side switch element 141a and the low potential side switch element 141b each have a gate pad 151a and a gate pad 151b to receive a control signal from the control element 102.

[0023] The control element 102 controls the high potential side switch element 141a and the low potential side switch element 141b. Specifically, the control element 102 sends a control signal to the gate pad 151a and the gate pad 151b according to an external signal. In addition, the control element 102 refers to the shunt voltage and performs an overcurrent protection operation as required. In addition, the control element 102 can be as follows Figure 2 and Figure 3 The configuration shown is one component, or as a modified example, it may be composed of a component for controlling the high potential side switching element 141 a and a component for controlling the low potential side switching element 141 b .

[0024] In addition, the power module 501 has a P terminal 106 (high voltage input terminal), an output terminal 107, an N terminal 108 (reference potential side terminal), a Vcc terminal 109 (power supply terminal), a Vin-a terminal 110 (first external signal input terminal), a Vin-b terminal 111 (second external signal input terminal), a GND terminal 112 (reference potential terminal), and a Cin terminal 113 (shunt voltage input terminal). These terminals are exposed from the inside of the housing 9 of the power module 501 to the outside, typically, as shown in FIG. Figure 2 Protruding as shown.

[0025] In this embodiment, the shunt resistor 3 is arranged outside the housing 9. As a modified example, the shunt resistor 3 may be arranged inside the housing 9, whereby the load driving device 601 including the shunt resistor 3 is configured as one power module.

[0026] The load 900 is connected to the output terminal 107, and thus, a current for driving the load 900 is supplied from the output terminal 107. A reference potential (ground potential) is applied to the GND terminal 112. A reference potential is applied to each of the N terminal 108 and the Cin terminal 113 via the shunt resistor 3. A positive voltage (DC voltage) relative to the reference potential is applied to the P terminal 106. A power supply 4 that generates a power supply voltage relative to the reference potential is connected to the Vcc terminal 109 (power supply terminal), and the control element 102 is operated using the power supply voltage. The Vin-a terminal 110 and the Vin-b terminal 111 each receive a control signal for the high potential side switch element 141a and the low potential side switch element 141b.

[0027] The output terminal 107 can be Figure 2 and Figure 3 As shown, the GND terminal 112 is formed into a single metal component together with the metal plate 124. Figure 2 As shown, the N terminal 108 may be short-circuited with the metal plate 122 by the bonding wire 8 (wiring component), or, as a modified example, may be formed as one metal component together with the metal plate 122. Figure 2 As shown, the P terminal 106 is formed into a single metal component together with the metal plate 123. Figure 2 As shown in FIG. 1 , the metal plate 121 is formed into a single metal component. The Cin terminal 113, the Vcc terminal 109, the Vin-a terminal 110, and the Vin-b terminal 111 can be as shown in FIG. Figure 2 As shown, it is connected to the control element 102 via a bonding wire 8 .

[0028] A high potential side switch element 141a is mounted on the metal plate 121 via a conductive bonding layer 14. A metal plate 124 is bonded to the high potential side switch element 141a via a conductive bonding layer 14. A low potential side switch element 141b is mounted on the metal plate 124 via a conductive bonding layer 14. A metal plate 123 is bonded to the low potential side switch element 141b via a conductive bonding layer 14.

[0029] According to the above structure, the low potential side switch element 141b is at least partially stacked on the high potential side switch element 141a via the metal plate 124 in the thickness direction. Figure 2 In the structure shown, the low potential side switch element 141b is partially stacked with the high potential side switch element 141a in the thickness direction so that the gate pad 151a of the high potential side switch element 141a is offset from the low potential side switch element 141b in the in-plane direction. The power module 501 has a bonding wire 8, which has one end connected to the gate pad 151a and the other end connected to the control element 102. In addition, the power module 501 has a bonding wire 8, which has one end connected to the gate pad 151b and the other end connected to the control element 102. Thus, the gate pad 151a and the gate pad 151b are each electrically connected to the control element 102.

[0030] The metal plate 122 is separated from the metal plate 121. In the present embodiment, a reference potential is applied to the metal plate 122, and a positive voltage is applied to the metal plate 121 from the P terminal 106. The control element 102 is mounted on the metal plate 122 via the conductive bonding layer 15. The conductive bonding layer 15 mechanically bonds the control element 102 to the metal plate 122, and electrically connects the control element 102 to the metal plate 122. In addition, in the case of integrating the metal plate 122 with the GND terminal 112 or electrically connecting them through the bonding wire 8, as a modified example, an insulating bonding layer can be used instead of the conductive bonding layer 15, and the potential of the metal plate 121 can be set to the reference potential.

[0031] like Figure 2 As shown in FIG. 1 , the control element 102 is arranged to be offset from the high potential side switch element 141a and the low potential side switch element 141b in the in-plane direction. Figure 2 As shown, the metal plate 122 is arranged to be offset from the high potential side switching element 141 a and the low potential side switching element 141 b in the in-plane direction.

[0032] Figure 41 is a diagram schematically showing the structure of a system 700 of a comparative example. In the power module 500 of the system 700, unlike the present embodiment, the control element 102 is bonded to the metal plate 123 via an insulating bonding layer (see FIG. 1 ). Figure 2 ) above. Therefore, in the comparative example, the control element 102 is not arranged in a staggered manner with the high potential side switch element 141a and the low potential side switch element 141b in the in-plane direction. As a result, a coupling capacitor 5 is generated between the portion of the control element 102 that is desired to be maintained as a reference potential and the metal plate 123 to which the shunt voltage is applied from the N terminal 108. Therefore, via the coupling capacitor 5, the change in the shunt voltage causes the potential of the portion of the control element 102 that is desired to be maintained as a reference potential to change. Due to this potential change, an excessive current flows through the wiring of the control element 102, thereby sometimes causing thermal damage. The generation of this current is avoided by using a floating power supply as the power supply 4 for driving the control element 102. However, the use of a floating power supply complicates the circuit of the system 700.

[0033] According to the present embodiment, the low potential side switch element 141b is at least partially stacked with the high potential side switch element 141a. Thus, it is possible to utilize the advantages brought by stacking a plurality of elements. On the other hand, the control element 102 is configured to be staggered with the high potential side switch element 141a and the low potential side switch element 141b in the in-plane direction. In other words, the control element 102 is not stacked with the high potential side switch element 141a and the low potential side switch element 141b. The potentials of the high potential side switch element 141a and the low potential side switch element 141b vary in accordance with the shunt voltage, but according to the above configuration, the variation is suppressed via the coupling capacitor 5 ( Figure 4 ) and thus cause a change in the reference potential of the control element 102. Therefore, the adverse effect of the shunt voltage on the control element 102 can be reduced without using a complex structure. In summary, the advantages brought by stacking a plurality of elements can be utilized, and the adverse effect of the shunt voltage on the control element 102 can be reduced without using a complex structure.

[0034] like Figure 2 As shown, the metal plate 122 is arranged to be offset from the high potential side switch element 141a and the low potential side switch element 141b in the in-plane direction. The potentials of the high potential side switch element 141a and the low potential side switch element 141b vary in accordance with the shunt voltage, but the above arrangement suppresses the variation through the coupling capacitor 5 ( Figure 4 ) and thus causes a change in the potential of the metal plate 122. Therefore, when the potential of the metal plate 122 corresponds to the reference potential of the control element 102, the adverse effect of the shunt voltage on the control element 102 can be further reduced.

[0035] A conductive bonding layer 15 ( Figure 3 ). Thus, it is easy to obtain a structure in which the potential of the metal plate 122 corresponds to the reference potential of the control element 102.

[0036] <Implementation method 2>

[0037] Figure 5 1 is a top view schematically showing the structure of the power module 502 and the shunt resistor 3 according to the second embodiment. The gate pad 151b is arranged at least partially offset from the high potential side switch element 141a in the in-plane direction, preferably as shown in FIG. Figure 5 The end ED of the bonding wire 8 joined to the gate pad 151b is arranged offset from the high potential side switch element 141a in the in-plane direction. The low potential side switch element 141b has the first to fourth corners C1 to C4 in the in-plane direction, and the gate pad 151b of the low potential side switch element 141b is arranged near the fourth corner C4 compared to the first to third corners C1 to C3.

[0038] In addition, since the configuration other than the above is substantially the same as that of the above-mentioned Embodiment 1, the same reference numerals are given to the same or corresponding elements, and the description thereof will not be repeated.

[0039] According to the present embodiment, the gate pad 151b is arranged at least partially offset from the high potential side switch element 141a in the in-plane direction. As a result, it is possible to reduce the damage to the high potential side switch element 141a caused by the process for obtaining an electrical connection between the gate pad 151b and the low potential side switch element 141b. Specifically, it is possible to prevent the occurrence of cracks and defects in the semiconductor chip that is the high potential side switch element 141a. Therefore, in the manufacture of the power module 502, the yield rate is improved, and thus the productivity is improved.

[0040] The end of the bonding wire is arranged to be offset from the high potential side switch element 141a in the in-plane direction. This can reduce damage to the high potential side switch element 141a caused by the step of bonding the bonding wire.

[0041] The gate pad 151b of the low potential side switch element 141b is arranged near the fourth corner C4. Thus, the area of ​​the portion of the low potential side switch element 141b stacked with the high potential side switch element 141a can be ensured to be large, and the gate pad 151b of the low potential side switch element 141b can be at least partially offset from the high potential side switch element 141a in the in-plane direction.

[0042] <Implementation method 3>

[0043] Figure 6It is a plan view schematically showing the structure of a power module 503 according to the third embodiment.

[0044] The power module 503 includes a high potential side switch element 241a (third semiconductor switch element), a low potential side switch element 241b (fourth semiconductor switch element), and a control element 202 (second control element) for controlling the high potential side switch element 241a and the low potential side switch element 241b. The low potential side switch element 241b is connected in series with the high potential side switch element 241a and is at least partially stacked with the high potential side switch element 241a in the thickness direction. The control element 202 controls the high potential side switch element 241a and the low potential side switch element 241b. The control element 202 is arranged to be offset from the high potential side switch element 241a and the low potential side switch element 241b in the in-plane direction.

[0045] In addition, the power module 503 includes a high potential side switch element 341a (fifth semiconductor switch element), a low potential side switch element 341b (sixth semiconductor switch element), and a control element 302 (third control element) for controlling the high potential side switch element 341a and the low potential side switch element 341b. The low potential side switch element 341b is connected in series with the high potential side switch element 341a and is at least partially stacked with the high potential side switch element 341a in the thickness direction. The control element 302 controls the high potential side switch element 341a and the low potential side switch element 341b. The control element 302 is arranged to be offset from the high potential side switch element 341a and the low potential side switch element 341b in the in-plane direction.

[0046] In addition, the power module 503 has a P terminal 206, an output terminal 207, an N terminal 208, a Vcc terminal 209, a Vin-a terminal 210, a Vin-b terminal 211, a GND terminal 212, and a Cin terminal 213. In addition, the power module 503 has a P terminal 306, an output terminal 307, an N terminal 308, a Vcc terminal 309, a Vin-a terminal 310, a Vin-b terminal 311, a GND terminal 312, and a Cin terminal 313.

[0047] According to the above structure, the power module 503 can generate three-phase AC from the output terminal 107, the output terminal 207, and the output terminal 307 by inputting external signals to the Vin-a terminal 110, the Vin-b terminal 111, the Vin-a terminal 210, the Vin-b terminal 211, the Vin-a terminal 310, and the Vin-b terminal 311 in appropriate phases.

[0048] In this embodiment, the metal plate 121 is connected via the conductive bonding layer 14 (see Figure 3) and is equipped with a high potential side switch element 141a, a high potential side switch element 241a, and a high potential side switch element 341a. In addition, the metal plate 123 is connected to the conductive bonding layer 14 (see Figure 3 ) and connected to the low potential side switch element 141b, the low potential side switch element 241b, and the low potential side switch element 341b.

[0049] In addition, since the configuration other than the above is substantially the same as that of the above-mentioned Embodiment 1 or 2, the same reference numerals are given to the same or corresponding elements, and the description thereof will not be repeated.

[0050] According to this embodiment, not only the control by the high potential side switch element 141a and the low potential side switch element 141b is performed, but also the control by the high potential side switch element 241a and the low potential side switch element 241b is performed. Therefore, multi-phase control can be performed instead of single-phase control. In addition, by performing the control by the high potential side switch element 341a and the low potential side switch element 341b, three-phase control can be performed.

[0051] The metal plate 121 is equipped with both a high potential side switch element 141a and a high potential side switch element 241a. Thus, a common potential can be supplied to both the high potential side switch element 141a and the high potential side switch element 241a through a simple structure. In addition, in the present embodiment, a high potential side switch element 341a is also mounted on the metal plate 121, which is further simplified. Through this simplification, the area in the in-plane direction of the power module 503 can be reduced. In addition, as a modified example, an independent metal plate can be provided for each of the high potential side switch element 141a, the high potential side switch element 241a, and the high potential side switch element 341a.

[0052] The metal plate 123 is joined to both the low potential side switch element 141b and the low potential side switch element 241b. Thus, a common potential can be supplied to both the low potential side switch element 141b and the low potential side switch element 241b through a simple structure. In addition, in the present embodiment, the metal plate 123 is also joined to the low potential side switch element 341b, which is further simplified. Through this simplification, the area in the in-plane direction of the power module 503 can be reduced. In addition, as a modified example, an independent metal plate can also be provided for each of the low potential side switch element 141b, the low potential side switch element 241b and the low potential side switch element 341b.

[0053] In addition, the various embodiments can be freely combined, or the various embodiments can be appropriately modified or omitted.

[0054] Description of the label

[0055] 3 shunt resistor, 4 power supply, 5 coupling capacitor, 8 bonding wire, 9 housing, 14, 15 conductive bonding layer, 102 first control element, 106 P terminal, 107 output terminal, 108 N terminal, 109 Vcc terminal, 110 Vin-a terminal, 111 Vin-b terminal, 112 GND terminal, 113 Cin terminal, 121 to 124 first to fourth metal plates, 141a high potential side switch element (first semiconductor switch element), 141b low potential side switch element (second semiconductor switch element), 151a, 151b gate pads, 202 second control element, 206 P terminal, 207 output terminal, 208 N terminal, 209 Vcc terminal, 210 Vin-a terminal , 211Vin-b terminal, 212GND terminal, 241a high potential side switching element (3rd semiconductor switching element), 241b low potential side switching element (4th semiconductor switching element), 302 third control element, 306P terminal, 307 output terminal, 308N terminal, 309Vcc terminal, 310Vin-a terminal, 311Vin-b terminal, 312GND terminal, 313Cin terminal, 341a high potential side switching element (5th semiconductor switching element), 341b low potential side switching element (6th semiconductor switching element), 500~503 power modules, 601 load driving device, 700, 701 system, 900 load, C1~C4 1st to 4th corners.

Claims

1. A power module having a thickness direction and an in-plane direction perpendicular to the thickness direction, The power module has: a first semiconductor switching element; a second semiconductor switch element connected in series with the first semiconductor switch element and at least partially stacked on the first semiconductor switch element in the thickness direction; and a first control element that controls the first semiconductor switch element and the second semiconductor switch element and performs an overcurrent protection operation with reference to a shunt voltage; The first control element is arranged to be offset from the first semiconductor switch element and the second semiconductor switch element in the in-plane direction. The first semiconductor switch element has an upper surface provided with a gate pad for receiving a control signal from the first control element, and the second semiconductor switch element is arranged on the upper surface of the first semiconductor switch element. The second semiconductor switch element has a gate pad for receiving a control signal from the first control element, and the gate pad of the second semiconductor switch element is arranged to be at least partially offset from the first semiconductor switch element in the in-plane direction.

2. The power module according to claim 1, wherein: Also features: a first metal plate on which the first semiconductor switch element is mounted; and a second metal plate on which the first control element is mounted, the second metal plate being separated from the first metal plate, The second metal plate is disposed so as to be offset from the first semiconductor switch element and the second semiconductor switch element in the in-plane direction.

3. The power module according to claim 2, wherein: The device further includes a conductive bonding layer that mechanically bonds the first control element to the second metal plate and electrically connects the first control element and the second metal plate.

4. The power module according to any one of claims 1 to 3, wherein: A bonding wire is further provided. The bonding wire has an end portion bonded to the gate pad of the second semiconductor switch element. The end portion of the bonding wire is arranged to be offset from the first semiconductor switch element in the in-plane direction.

5. The power module according to any one of claims 1 to 3, wherein: The second semiconductor switch element has first to fourth corners in the in-plane direction, and the gate pad of the second semiconductor switch element is arranged closer to the fourth corner than to the first to third corners.

6. The power module according to claim 4, wherein: The second semiconductor switch element has first to fourth corners in the in-plane direction, and the gate pad of the second semiconductor switch element is arranged closer to the fourth corner than to the first to third corners.

7. The power module according to claim 1, wherein: Also features: A third semiconductor switching element; a fourth semiconductor switch element connected in series with the third semiconductor switch element, the fourth semiconductor switch element being at least partially stacked on the third semiconductor switch element in the thickness direction; as well as a second control element that controls the third semiconductor switch element and the fourth semiconductor switch element, The second control element is disposed so as to be offset from the third semiconductor switch element and the fourth semiconductor switch element in the in-plane direction.

8. The power module according to claim 7, wherein: The device further includes a first metal plate on which the first semiconductor switch element and the third semiconductor switch element are mounted.

9. The power module according to claim 7 or 8, wherein: A third metal plate is further provided, and the third metal plate is joined to the second semiconductor switch element and the fourth semiconductor switch element.

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