Sensing panel and its preparation method, sensing device

Abstract

The present application provides a sensing panel and a preparation method thereof, and a sensing device, wherein the sensing panel substrate includes at least one sensing area; at least one first electrode line arranged at intervals on the sensing area and extending along a first direction; at least one second electrode line arranged at intervals on the sensing area and extending along a second direction; wherein the second electrode line is arranged cross-insulated with the first electrode line; and a variable resistance layer covering the first electrode line and the second electrode line. By covering the variable resistance layer above the cross-insulated first electrode line and the second electrode line, when the variable resistance layer is subjected to pressure, the resistance changes, causing the change of the electrical signal on the first electrode line and the second electrode line, the sensitivity is greatly improved, the force position can be fed back through mechanical sensing with a small force, and the position and size can be digitally recorded, and the integration difficulty is greatly reduced.

Description

Technical Field

[0001] The present application relates to the field of sensing technology, and in particular to a sensing panel and a preparation method thereof, and a sensing device. Background Art

[0002] Currently, Chinese and Western medicine use traditional palpation methods such as pressing to diagnose whether there are lumps in the body. Because different doctors have different perceptions of force, pressing hard may cause discomfort to patients, and the distribution of pressing results cannot be systematically and quantitatively recorded.

[0003] Patents have been reported for fabric pressure sensors used in wearable electronic devices and smart textiles. However, at present, most of the traditional fabric pressure sensor integration methods are to use pressure-sensitive conductive yarns as warp or weft yarns and integrate them with fabrics to form an integrated structure. When the fabric is subjected to pressure stimulation, it deforms in the thickness direction, causing its resistance to change. Pressure sensing is achieved by detecting the electrical signal in the thickness direction of the fabric.

[0004] However, there are still the following shortcomings: (1) The yarn has a relatively loose structure and low sensitivity. The repeatability of the change in the contact area between the warp and weft yarns is usually very poor, which makes integration difficult and difficult to achieve linearization, resulting in low linearity and poor repeatability of the resistance signal. (2) The conductive coating on the yarn surface is subjected to pressure and shear force at the same time, so it cannot withstand long-term cyclic loading and has a limited lifespan. (3) Because the fabric structure is breathable and moisture permeable, and moisture will seriously affect the contact resistance of the yarn, the sensor is extremely susceptible to moisture. Summary of the invention

[0005] In response to the above problems, the present application provides a sensing panel and a preparation method thereof, and a sensing device, which solve the technical problems of low sensitivity and high integration difficulty of pressure sensors in wearable devices in the prior art.

[0006] In a first aspect, the present application provides a sensing panel, comprising:

[0007] A substrate base, wherein the substrate base comprises at least one sensing region;

[0008] At least one first electrode line is disposed on the sensing area at intervals and extends along a first direction;

[0009] At least one second electrode line is disposed on the sensing area at intervals and extends along a second direction; wherein the second electrode line is disposed to cross and be insulated from the first electrode line;

[0010] A variable resistance layer covers the first electrode line and the second electrode line.

[0011] In some embodiments, in the above-mentioned sensing panel, the resistance of the variable resistance layer changes with the pressure it is subjected to.

[0012] In some embodiments, in the above-mentioned sensing panel, the material of the variable resistance layer includes a siloxane material and thorny hollow carbon microspheres dispersed in the siloxane material.

[0013] In some embodiments, in the above-mentioned sensing panel, the second electrode line includes a plurality of second electrode units and a second connecting bridge connecting two adjacent second electrode units;

[0014] Wherein, the second connection bridge is arranged to cross the first electrode line, and the second connection bridge is insulated from the first electrode line by an insulating block;

[0015] The second electrode units and the first electrode lines are located in the same layer.

[0016] In some embodiments, in the above-mentioned sensing panel, the first electrode line includes a plurality of first electrode units and a first connecting bridge connecting two adjacent first electrode units;

[0017] The second connection bridge is arranged crosswise with the first connection bridge, and the second connection bridge is insulated from the first connection bridge by the insulation block.

[0018] In some embodiments, in the above-mentioned sensing panel, the minimum distance between adjacent first electrode units and second electrode units is greater than the diameter of the thorny hollow carbon microspheres.

[0019] In some embodiments, in the above-mentioned sensing panel, the sensing panel is a stretchable panel.

[0020] In some embodiments, in the above-mentioned sensing panel, the substrate includes a plurality of island regions arranged in an array, an opening region located between two adjacent island regions, and a bridge region for connecting two adjacent island regions;

[0021] Wherein, each of the island areas includes at least one sensing area;

[0022] The opening area is provided with a through hole penetrating the substrate.

[0023] In some embodiments, in the above-mentioned sensing panel, a first signal line connecting the first electrode lines on two corresponding adjacent islands and / or a second signal line connecting the second electrode lines on two corresponding adjacent islands are provided on the bridge area.

[0024] In some embodiments, in the above-mentioned sensing panel, the substrate includes a flexible substrate.

[0025] In some embodiments, the sensing panel further includes: a protection layer covering the variable resistance layer.

[0026] In a second aspect, the present application provides a method for preparing a sensor panel, comprising:

[0027] Providing a substrate; wherein the substrate comprises at least one sensing area;

[0028] At least one first electrode line is formed on the sensing area and is arranged at intervals and extends along a first direction, and at least one second electrode line is formed on the sensing area and is arranged at intervals and extends along a second direction; wherein the second electrode line is arranged to cross and be insulated from the first electrode line;

[0029] A variable resistance layer is formed covering the first electrode line and the second electrode line.

[0030] In some embodiments, in the method for preparing the sensing panel, forming at least one first electrode line arranged at intervals and extending along a first direction on the sensing area, and forming at least one second electrode line arranged at intervals and extending along a second direction on the sensing area, comprises the following steps:

[0031] At least one first electrode line is formed on the sensing area and is arranged at intervals and extends along a first direction, and a plurality of rows of second electrode units are formed on the sensing area and are arranged along a second direction; wherein the first direction intersects with the second direction;

[0032] A plurality of insulating blocks are formed above the first electrode lines; wherein the orthographic projection of the insulating blocks on the base substrate at least covers the orthographic projection of the first electrode line portion between two adjacent second electrode units in the same row on the base substrate;

[0033] A second connecting bridge is formed above the insulating block, wherein the second connecting bridge extends to both sides of the insulating block to connect the second electrode units respectively located on both sides of the insulating block, thereby forming a second electrode line extending along the second direction.

[0034] In a third aspect, the present application provides a sensing device, comprising the sensing panel as described in any one of the first aspects or a sensing panel prepared by using the preparation method as described in any one of the second aspects.

[0035] By adopting the above technical solution, at least the following technical effects can be achieved:

[0036] The present application provides a sensing panel and a preparation method thereof, and a sensing device, wherein the sensing panel substrate includes at least one sensing area; at least one first electrode line spaced apart and extending along a first direction on the sensing area; at least one second electrode line spaced apart and extending along a second direction on the sensing area; wherein the second electrode line is cross-insulated from the first electrode line; and a variable resistance layer covering the first electrode line and the second electrode line. By covering the variable resistance layer above the cross-insulated first electrode line and the second electrode line, when the variable resistance layer is subjected to pressure, the resistance changes, causing changes in the electrical signals on the first electrode line and the second electrode line, and the sensitivity is greatly improved. With a small force, the force position can be fed back through mechanical sensing, and the position and size can be digitally recorded, and the difficulty of integration is greatly reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The accompanying drawings are used to provide a further understanding of the present application and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present application but do not constitute a limitation to the present application. In the accompanying drawings:

[0038] Figure 1 is a schematic diagram of a front plan view of a sensing panel shown in an exemplary embodiment of the present application;

[0039] Figure 2 yes Figure 1 Schematic diagram of the cross-sectional structure along the A-A' tangent line;

[0040] Figure 3 yes Figure 1 Schematic diagram of the cross-sectional structure along the B-B' tangent line;

[0041] Figure 4 is a front plan view of another sensing panel shown in an exemplary embodiment of the present application;

[0042] Figure 5 is a schematic diagram of wearing a sensing panel shown in an exemplary embodiment of the present application;

[0043] Figure 6 is a schematic diagram of a front plan view of a substrate according to an exemplary embodiment of the present application;

[0044] Figure 7 It is a schematic flow chart of a method for preparing a sensor panel according to an exemplary embodiment of the present application;

[0045] In the drawings, the same reference numerals are used for the same components, and the drawings are not drawn to scale;

[0046] The accompanying drawings are marked as follows:

[0047] 11-island area; 111-sensing area; 112-non-sensing area; 12-opening area; 13-bridge area; 20-first electrode line; 21-first electrode unit; 22-first connecting bridge; 30-second electrode line; 31-second electrode unit; 32-second connecting bridge; 40-insulating block; 50-variable resistance layer; 51-siloxane material; 52-thorny hollow carbon microspheres; 60-protective layer. DETAILED DESCRIPTION

[0048] The following will describe the implementation methods of the present application in detail in conjunction with the accompanying drawings and embodiments, so that the implementation process of how the present application applies technical means to solve technical problems and achieve corresponding technical effects can be fully understood and implemented accordingly. The embodiments of the present application and the various features in the embodiments can be combined with each other without conflict, and the technical solutions formed are all within the scope of protection of the present application. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0049] It should be understood that although the terms "first", "second", "third", etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer or part discussed below can be represented as a second element, component, region, layer or part.

[0050] It will be appreciated that spatially relative terms, such as "above", "above", "below", "under", etc., may be used herein for convenience of description to describe the relationship of one element or feature to other elements or features shown in the figures. It will be appreciated that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation shown in the figures. For example, if the device in the figures is turned over, then elements or features described as "below other elements" would be oriented "above" the other elements or features. Thus, the exemplary terms "below" and "under" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.

[0051] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0052] Embodiments of the present application are described herein with reference to cross-sectional views that are schematic diagrams of ideal embodiments (and intermediate structures) of the present application. Thus, variations from the shapes shown due to, for example, manufacturing techniques and / or tolerances can be expected. Therefore, embodiments of the present application should not be limited to the specific shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing.

[0053] In order to thoroughly understand the present application, detailed structures and steps will be presented in the following description to illustrate the technical solution proposed by the present application. The preferred embodiments of the present application are described in detail below, but in addition to these detailed descriptions, the present application may also have other implementation methods.

[0054] See also Figure 1 , Figure 2 and Figure 3 An embodiment of the present application provides a sensing panel, including a substrate (not marked in the figure), at least one first electrode line 20 , at least one second electrode line 30 and a variable resistance layer 50 .

[0055] Among them, in order to Figure 1 The shape and position relationship of the first electrode line 20 and the second electrode line 30 are clearly shown in FIG. Figure 1 The variable resistance layer 50 is not shown, but according to Figure 2 and Figure 3 , the covering method of the variable resistance layer 50 can be clearly understood.

[0056] The substrate includes at least one sensing area 111 and at least one non-sensing area 112 .

[0057] At least one first electrode line 20 is disposed on the sensing area 111 at intervals and along a first direction (eg, Figure 1 The column direction in the figure extends.

[0058] At least one second electrode line 30 is disposed on the sensing area 111 at intervals and along the second direction (eg, Figure 1wherein the second electrode lines 30 are arranged to cross and be insulated from the first electrode lines 20.

[0059] The variable resistance layer 50 covers the first electrode lines 20 and the second electrode lines 30 .

[0060] In some embodiments, the resistance of the variable resistance layer 50 changes as the pressure applied thereto changes.

[0061] In some embodiments, the resistance of the variable resistance layer 50 decreases as the pressure applied thereto increases.

[0062] In some embodiments, when the variable resistance layer 50 is subjected to pressure that increases to a preset threshold, the resistance of the variable resistance layer 50 at the force-bearing position decreases until the variable resistance layer 50 becomes a semiconductor or a conductor, causing the resistance of the first electrode line 20 and the second electrode line 30 covered by it to change, thereby causing the electrical signal (such as a current signal) transmitted by the first electrode line 20 and the second electrode line 30 to change. When the external chip recognizes that the electrical signal transmitted by a first electrode line 20 and a second electrode line 30 has changed, the position and size of the force point can be located based on the first electrode line 20 and the second electrode line 30 where the electrical signal has changed, for example, the intersection of the first electrode line 20 and the second electrode line 30 where the electrical signal has changed is defined as the location of the force point.

[0063] By implementing pressure sensing in the above manner, the recognition sensitivity is greatly improved. With a small force, the force position can be fed back through mechanical sensing, and the position and size can be digitally recorded. The preparation process is similar to the preparation method of existing display panels, which can be achieved through film deposition and patterning processes, greatly reducing the difficulty of integration and can be recycled.

[0064] For example, when the above-mentioned sensing panel is applied to a medical sensing device, the location of a lump in the human body can be fed back through mechanical sensing with a relatively small force, and the location and size can be digitally recorded.

[0065] In some embodiments, the material of the variable resistance layer 50 includes a siloxane material 51 and thorny hollow carbon microspheres 52 dispersed in the siloxane material 51 .

[0066] Correspondingly, when the variable resistance layer 50 is subjected to pressure, the thorny hollow carbon microspheres 52 dispersed in the silicone polymer contact each other under the action of pressure, and the resistance decreases. The greater the pressure, the larger the contact area of ​​the thorny hollow carbon microspheres 52 under the extrusion effect, and the smaller the resistance of the variable resistance layer 50, thereby realizing the semiconductorization or conductorization of the variable resistance layer 50.

[0067] In the variable resistance layer 50, the weight percentage of the thorny hollow carbon microspheres 52 can be within a preset range, so that when the variable resistance layer 50 is not subjected to pressure, the variable resistance layer 50 remains in an insulating state, and when the variable resistance layer 50 is subjected to pressure, the resistance of the variable resistance layer 50 gradually decreases, and when the pressure is greater than a preset threshold, the variable resistance layer 50 at the force position can be transformed into a semiconductor or conductor. The above preset threshold can be set according to the sensitivity requirement.

[0068] In some embodiments, the mass percentage of the thorny hollow carbon microspheres 52 and the siloxane material 51 is 0.5% to 20%.

[0069] In some embodiments, the siloxane-based material 51 includes polydimethylsiloxane.

[0070] In some embodiments, the thorny hollow carbon microspheres 52 may be sea urchin-shaped hollow carbon microspheres 52 .

[0071] In some embodiments, the diameter of the thorny hollow carbon microsphere 52 is 100 nm to 1000 nm.

[0072] In some embodiments, the height of the thorns on the surface of the thorny hollow carbon microsphere 52 may be 80 nm, the width of the thorns may be 10 nm, and the diameter of the thorny hollow carbon microsphere 52 may be 600 nm.

[0073] In some embodiments, the thickness of the variable resistance layer 50 is 2-50 μm.

[0074] In some embodiments, the material of the first electrode line 20 and the second electrode line 30 includes a conductive material such as Mo, Al, Ti, Cu, Ag, Au, etc.

[0075] In some embodiments, the first direction and the second direction are perpendicular to each other.

[0076] In some embodiments, the second electrode line 30 includes a plurality of second electrode units 31 and a second connecting bridge 32 connecting two adjacent second electrode units 31 .

[0077] The orthographic projection of the first electrode line 20 on the substrate does not cover the orthographic projection of the second electrode unit 31 on the substrate, and the orthographic projection of the second connecting bridge 32 on the substrate partially overlaps with the orthographic projection of the first electrode line 20 on the substrate, that is, the second connecting bridge 32 is cross-arranged with the first electrode line 20.

[0078] The second connection bridge 32 is insulated from the first electrode line 20 by the insulating block 40 , and the second electrode unit 31 and the first electrode line 20 are located in the same layer.

[0079] The material of the insulating block 40 includes inorganic materials such as silicon nitride.

[0080] like Figure 2 and Figure 3 As shown, the second electrode unit 31 and the first electrode line 20 are located in the first production layer, the insulating block 40 is located in the second production layer, and the second connecting bridge 32 is located in the third production layer, that is, from bottom to top, it is the substrate, the second electrode unit 31 and the first electrode line 20, the insulating block 40, and the second connecting bridge 32.

[0081] In addition, in some embodiments, the second connecting bridge 32 can be located in the first production layer, and correspondingly, the insulating block 40 is located in the second production layer, and the second electrode unit 31 and the first electrode line 20 are located in the third production layer, that is, from bottom to top, the substrate, the second connecting bridge 32, the insulating block 40, the second electrode unit 31 and the first electrode line 20 are located in sequence.

[0082] In some embodiments, the first electrode line 20 includes a plurality of first electrode units 21 and a first connecting bridge 22 connecting two adjacent first electrode units 21 .

[0083] The first connection bridge 22 and the second connection bridge 32 are arranged crosswise, and the first connection bridge 22 is insulated from the second connection bridge 32 by the insulation block 40 .

[0084] Correspondingly, such as Figure 1 and Figure 3 As shown, the variable resistance layer 50 fills the gap area between the first electrode unit 21 and the second electrode unit 31 .

[0085] In some embodiments, the minimum spacing between adjacent first electrode units 21 and second electrode units 31 is greater than the diameter of the prickly hollow carbon microspheres 52. When the prickly hollow carbon microspheres 52 at this position contact each other under pressure, conduction between the first electrode unit 21 and the second electrode unit 31 can be achieved.

[0086] In some embodiments, the force-bearing area of ​​the sensing panel is much larger than the area of ​​the first electrode unit 21 and the second electrode unit 31, as well as the gap area between the two. Therefore, when the variable resistance layer 50 is not subjected to pressure, the variable resistance layer 50 remains insulated, and the first electrode line 20 and the second electrode line 30 are insulated from each other. When the variable resistance layer 50 is subjected to pressure, the resistance of the variable resistance layer 50 gradually decreases. When the pressure is greater than a preset threshold, the variable resistance layer 50 is transformed into a semiconductor or a conductor. The resistance of the first electrode unit 21 and the second electrode unit 31 at the force-bearing position is affected by the resistance of the variable resistance layer 50, and the first electrode unit 21 and the second electrode unit 31 at the force-bearing position are connected due to the variable resistance layer 50 being transformed into a semiconductor or a conductor, so that the change in the resistance of the variable resistance layer 50 has a greatly increased degree of influence on the change in the resistance of the first electrode unit 21 and the second electrode unit 31. The greater the change in the electrical signal transmitted by the first electrode line 20 and the second electrode line 30, even if subjected to a small pressure, the electrical signal transmitted by the first electrode line 20 and the second electrode line 30 will be significantly changed, and the sensing sensitivity is greatly improved.

[0087] In some embodiments, Figure 4 As shown, the number of the first electrode lines 20 and the second electrode lines 30 provided on the sensing area 111 is greater than or equal to 2, and the first electrode units 21 and the second electrode units 31 are arranged in an array in the sensing area 111. The more the number of the first electrode lines 20 and the second electrode lines 30, the more the number of the first electrode units 21 and the second electrode units 31, the higher the sensitivity of the sensing panel.

[0088] In some embodiments, the sensing panel is a stretchable panel, so that when the sensing panel is applied to a wearable device, the sensing panel can wrap around a human body by stretching, such as Figure 5 As shown, the location and size of diseases such as lumps can be accurately recorded.

[0089] In some embodiments, Figure 6 As shown, the substrate of the stretchable sensing panel includes a plurality of island regions 11 arranged in an array, an opening region 12 located between two adjacent island regions 11 , and a bridge region 13 for connecting two adjacent island regions 11 .

[0090] Each island 11 includes at least one sensing area 111 and at least one non-sensing area 112 located outside the sensing area 111. As described above, the sensing area 111 is provided with first electrode lines 20 and second electrode lines 30. The arrangement of the first electrode lines 20 and second electrode lines 30 on each island 11 is similar to that of the first electrode lines 20 and second electrode lines 30. Figure 1 and 4 The same is not repeated here.

[0091] The opening area 12 is provided with a through hole penetrating the substrate. The shape and size of the through hole can be determined by mechanical simulation.

[0092] In some embodiments, the bridge area 13 is provided with a first signal line (not shown in the figure) connecting the first electrode lines 20 on the corresponding two adjacent island areas 11, and / or a second signal line (not shown in the figure) connecting the second electrode lines 30 on the corresponding two adjacent island areas 11.

[0093] In some embodiments, the substrate base includes a flexible substrate, which can be bent and deformed during use of the sensing panel to further wrap around the human body.

[0094] In some embodiments, the material of the flexible substrate includes at least one of polyethylene terephthalate (PET), polyethylene naphthalate diformicacid glycol ester (PEN) and polyimide (PI).

[0095] In some embodiments, the substrate includes a flexible substrate, and a buffer layer disposed above the flexible substrate.

[0096] The buffer layer protects the first electrode lines 20 and the second electrode lines 30 , buffers stress, and prevents diffusion of substrate impurity ions.

[0097] In some embodiments, the sensing panel further includes a protection layer 60 covering the variable resistance layer 50 .

[0098] In some embodiments, the material of the protection layer 60 is an inorganic material, including at least one of silicon nitride and silicon oxide.

[0099] The sensing panel provided in the embodiment of the present application is provided with a variable resistance layer 50 covering the cross-insulated first electrode lines 20 and second electrode lines 30. When the variable resistance layer 50 is subjected to pressure, the resistance changes, causing the electrical signals on the first electrode lines 20 and the second electrode lines 30 to change. The sensitivity is greatly improved, and the force position can be fed back through mechanical sensing with a small force, and the position and size can be digitally recorded, and the difficulty of integration is greatly reduced.

[0100] The embodiment of the present application also provides a method for preparing a sensor panel, wherein the "patterning" mentioned below includes processes such as coating photoresist, mask exposure, development, etching and stripping photoresist, etc. "Deposition" can be selected from any one or more of sputtering, evaporation and chemical vapor deposition, and etching can be selected from any one or more of dry etching and wet etching.

[0101] See also Figure 7 , a method for preparing a sensor panel provided in an embodiment of the present application comprises the following steps:

[0102] Step S110 : providing a base substrate; wherein the base substrate includes at least one sensing area 111 and at least one non-sensing area 112 .

[0103] In some embodiments, the substrate base includes a flexible substrate, which can be deformed during use of the sensing panel to further achieve human body wrapping.

[0104] In some embodiments, the material of the flexible substrate includes at least one of polyethylene terephthalate (PET), polyethylene naphthalate diformicacid glycol ester (PEN) and polyimide (PI).

[0105] In some embodiments, the substrate includes a flexible substrate, and a buffer layer disposed above the flexible substrate.

[0106] The buffer layer protects the first electrode lines 20 and the second electrode lines 30 , buffers stress, and prevents diffusion of substrate impurity ions.

[0107] In some embodiments, in order to prevent the flexible substrate from being deformed during the manufacturing process, the flexible substrate may be disposed on a rigid substrate, and then the rigid substrate may be removed after the process is completed.

[0108] Step S120 : forming at least one first electrode line 20 disposed at intervals and extending along the first direction on the sensing region 111 , and forming at least one second electrode line 30 disposed at intervals and extending along the second direction on the sensing region 111 ; wherein the second electrode line 30 is disposed to cross and be insulated from the first electrode line 20 .

[0109] In some embodiments, the second electrode line 30 includes a plurality of second electrode units 31 and a second connecting bridge 32 connecting two adjacent second electrode units 31 .

[0110] The second connection bridge 32 is insulated from the first electrode line 20 by the insulating block 40 , and the second electrode unit 31 and the first electrode line 20 are located in the same layer.

[0111] The second electrode unit 31 and the first electrode line 20 are located in the first production layer, the insulating block 40 is located in the second production layer, and the second connecting bridge 32 is located in the third production layer, that is, from bottom to top, the substrate, the second electrode unit 31 and the first electrode line 20, the insulating block 40, and the second connecting bridge 32.

[0112] Correspondingly, step S120 includes the following steps:

[0113] S122a: forming at least one first electrode line 20 arranged at intervals and extending along a first direction on the sensing area 111, and forming a plurality of rows of second electrode units 31 arranged along a second direction on the sensing area 111; wherein the first direction intersects the second direction;

[0114] S124a: forming a plurality of insulating blocks 40 above the first electrode lines 20; wherein the orthographic projection of the insulating blocks 40 on the base substrate at least covers the orthographic projection of a portion of the first electrode lines 20 between two adjacent second electrode units 31 in the same row on the base substrate;

[0115] S126a: forming a plurality of second connection bridges 32 above the insulating block 40; wherein the second connection bridges 32 extend to both sides of the insulating block 40 to connect the second electrode units 31 respectively located on both sides of the insulating block 40, thereby forming second electrode lines 30 extending along the second direction.

[0116] The orthographic projection of the first electrode line 20 on the substrate does not cover the orthographic projection of the second electrode unit 31 on the substrate, and the orthographic projection of the second connecting bridge 32 on the substrate partially overlaps with the orthographic projection of the first electrode line 20 on the substrate, that is, the second connecting bridge 32 is cross-arranged with the first electrode line 20.

[0117] In step S122a, a first conductive layer is formed on the sensing region 111 and patterned to form at least one first electrode line 20 arranged at intervals and extending along the first direction on the sensing region 111, and a plurality of rows of second electrode units 31 arranged along the second direction are formed on the sensing region 111. The material of the first conductive layer includes conductive materials such as Mo, Al, Ti, Cu, Ag, and Au.

[0118] In step S124a, an insulating layer is formed on the first conductive layer and patterned to form a plurality of insulating blocks 40 on the first electrode line 20. The insulating blocks 40 are used to achieve the insulation crossing between the second connecting bridge 32 and the first electrode line 20 when the second connecting bridge 32 is subsequently formed. The material of the insulating layer includes inorganic materials such as silicon nitride.

[0119] In step S126a, a second conductive layer is formed on the insulating layer and patterned to form a plurality of second connecting bridges 32 on the insulating block 40. The material of the second conductive layer includes conductive materials such as Mo, Al, Ti, Cu, Ag, and Au.

[0120] In addition, in some embodiments, the second connecting bridge 32 can be located in the first production layer, and correspondingly, the insulating block 40 is located in the second production layer, and the second electrode unit 31 and the first electrode line 20 are located in the third production layer, that is, from bottom to top, the substrate, the second connecting bridge 32, the insulating block 40, the second electrode unit 31 and the first electrode line 20 are located in sequence.

[0121] Correspondingly, step S120 includes the following steps:

[0122] S122b: forming a plurality of second connection bridges 32 on the sensing area 111;

[0123] S124b: forming a plurality of insulating blocks 40 above the second connecting bridge 32; wherein the orthographic projection of the insulating block 40 on the substrate covers a portion of the orthographic projection of the second connecting bridge 32 on the substrate;

[0124] S126b: At least one first electrode line 20 is formed above the insulating block 40 and is arranged at intervals and extends along the first direction, and a plurality of rows of second electrode units 31 are formed along the second direction; wherein the first direction intersects the second direction, and the second electrode units 31 on both sides of the insulating block 40 are connected by a second connecting bridge 32, thereby forming a second electrode line 30 extending along the second direction.

[0125] The orthographic projection of the first electrode line 20 on the substrate does not cover the orthographic projection of the second electrode unit 31 on the substrate, and the orthographic projection of the second connecting bridge 32 on the substrate partially overlaps with the orthographic projection of the first electrode line 20 on the substrate, that is, the second connecting bridge 32 is cross-arranged with the first electrode line 20.

[0126] In step S122 b , a first conductive layer is formed on the sensing region 111 and patterned to form a plurality of second connecting bridges 32 on the sensing region 111 .

[0127] In step S124b, an insulating layer is formed on the first conductive layer and patterned to form a plurality of insulating blocks 40 on the second connecting bridge 32; wherein the orthographic projection of the insulating block 40 on the substrate covers a portion of the orthographic projection of the second connecting bridge 32 on the substrate, and the insulating block 40 is used to achieve the insulating intersection of the second connecting bridge 32 and the first electrode line 20 when the first electrode line 20 is subsequently formed. The material of the insulating layer includes inorganic materials such as silicon nitride.

[0128] In step S126b, a second conductive layer is formed on the insulating layer and patterned to form at least one first electrode line 20 spaced apart and extending along the first direction on the insulating block 40, and to form a plurality of rows of second electrode units 31 arranged along the second direction on the sensing area 111. The material of the second conductive layer includes conductive materials such as Mo, Al, Ti, Cu, Ag, and Au.

[0129] In some embodiments, the above-mentioned sensing panel is a stretchable panel, so that when the above-mentioned sensing panel is applied to a wearable device, the sensing panel can wrap around the human body by stretching, and can accurately record the location and size of diseases such as lumps.

[0130] In some embodiments, the substrate of the stretchable sensing panel includes a plurality of island regions 11 arranged in an array, an opening region 12 between two adjacent island regions 11 , and a bridge region 13 for connecting two adjacent island regions 11 .

[0131] Each island region 11 includes at least one sensing region 111 and at least one non-sensing region 112 located outside the sensing region 111. As described above, the sensing region 111 is provided with a first electrode line 20 and a second electrode line 30.

[0132] In some embodiments, the bridge area 13 is provided with a first signal line (not shown in the figure) connecting the first electrode lines 20 on the corresponding two adjacent island areas 11, and / or a second signal line (not shown in the figure) connecting the second electrode lines 30 on the corresponding two adjacent island areas 11.

[0133] In the structure corresponding to the stretchable panel, where the substrate includes a laminated flexible substrate and a buffer layer, after step S120, the buffer layer is patterned to form an opening area 12. In order to avoid contamination of the base platform below during the subsequent formation of the variable resistance layer 50, in this step, the through hole in the opening area 12 only penetrates the buffer layer, or penetrates the buffer layer and part of the substrate.

[0134] Step S130 : forming a variable resistance layer 50 covering the first electrode lines 20 and the second electrode lines 30 .

[0135] In some embodiments, the resistance of the variable resistance layer 50 changes as the pressure applied thereto changes.

[0136] In some embodiments, the resistance of the variable resistance layer 50 decreases as the pressure applied thereto increases.

[0137] In some embodiments, when the variable resistance layer 50 is subjected to pressure that increases to a preset threshold, the resistance of the variable resistance layer 50 at the force-bearing position decreases until the variable resistance layer 50 becomes a semiconductor or a conductor, causing the resistance of the first electrode line 20 and the second electrode line 30 covered by it to change, thereby causing the electrical signal (such as a current signal) transmitted by the first electrode line 20 and the second electrode line 30 to change. When the external chip recognizes that the electrical signal transmitted by a first electrode line 20 and a second electrode line 30 has changed, the position and size of the force point can be located based on the first electrode line 20 and the second electrode line 30 where the electrical signal has changed, for example, the intersection of the first electrode line 20 and the second electrode line 30 where the electrical signal has changed is defined as the location of the force point.

[0138] By implementing pressure sensing in the above manner, the recognition sensitivity is greatly improved. With a small force, the force position can be fed back through mechanical sensing, and the position and size can be digitally recorded. The preparation process is similar to the preparation method of existing display panels, which can be achieved through film deposition and patterning processes, greatly reducing the difficulty of integration and can be recycled.

[0139] For example, when the sensing panel is used in a medical sensing device, the location of a hard lump in the human body can be fed back through mechanical sensing with a small force, and the location and size can be digitally recorded.

[0140] In some embodiments, the material of the variable resistance layer 50 includes a siloxane material 51 and thorny hollow carbon microspheres 52 dispersed in the siloxane material 51 .

[0141] Correspondingly, when the variable resistance layer 50 is subjected to pressure, the thorny hollow carbon microspheres 52 dispersed in the silicone polymer contact each other under the action of pressure, and the resistance decreases. The greater the pressure, the larger the contact area of ​​the thorny hollow carbon microspheres 52 under the extrusion, and the smaller the resistance of the variable resistance layer 50, thereby realizing the semiconductorization or conductorization of the variable resistance layer 50.

[0142] In the variable resistance layer 50, the weight percentage of the thorny hollow carbon microspheres 52 can be within a preset range, so that when the variable resistance layer 50 is not subjected to pressure, the variable resistance layer 50 remains in an insulating state, and when the variable resistance layer 50 is subjected to pressure, the resistance of the variable resistance layer 50 gradually decreases, and when the pressure is greater than a preset threshold, the variable resistance layer 50 at the force position can be transformed into a semiconductor or conductor. The above preset threshold can be set according to the sensitivity requirement.

[0143] In some embodiments, the mass percentage of the thorny hollow carbon microspheres 52 to the organosilicon polymer is 0.5% to 20%.

[0144] In some embodiments, the siloxane-based material 51 includes polydimethylsiloxane.

[0145] In some embodiments, the thorny hollow carbon microspheres 52 may be sea urchin-shaped hollow carbon microspheres 52 .

[0146] In some embodiments, the diameter of the thorny hollow carbon microsphere 52 is 100 nm to 1000 nm.

[0147] In some embodiments, the height of the thorns on the surface of the thorny hollow carbon microsphere 52 may be 80 nm, the width of the thorns may be 10 nm, and the diameter of the thorny hollow carbon microsphere 52 may be 600 nm.

[0148] In some embodiments, the thickness of the variable resistance layer 50 is 2-50 μm.

[0149] In the structure where the first electrode line 20 and the second electrode line 30 respectively include a plurality of first electrode units 21 and a plurality of second electrode units 31, the minimum spacing between adjacent first electrode units 21 and second electrode units 31 is greater than the diameter of the prickly hollow carbon microspheres 52. When the prickly hollow carbon microspheres 52 at this position contact each other under pressure, conduction between the first electrode unit 21 and the second electrode unit 31 can be achieved.

[0150] In some embodiments, the force-bearing area of ​​the sensing panel is much larger than the area of ​​the first electrode unit 21 and the second electrode unit 31, as well as the gap area between the two. Therefore, when the variable resistance layer 50 is not subjected to pressure, the variable resistance layer 50 remains insulated, and the first electrode line 20 and the second electrode line 30 are insulated from each other. When the variable resistance layer 50 is subjected to pressure, the resistance of the variable resistance layer 50 gradually decreases. When the pressure is greater than a preset threshold, the variable resistance layer 50 is transformed into a semiconductor or a conductor. The resistance of the first electrode unit 21 and the second electrode unit 31 at the force-bearing position is affected by the resistance of the variable resistance layer 50, and the first electrode unit 21 and the second electrode unit 31 at the force-bearing position are connected due to the variable resistance layer 50 being transformed into a semiconductor or a conductor, so that the change in the resistance of the variable resistance layer 50 has a greatly increased degree of influence on the change in the resistance of the first electrode unit 21 and the second electrode unit 31. The greater the change in the electrical signal transmitted by the first electrode line 20 and the second electrode line 30, even if subjected to a small pressure, the electrical signal transmitted by the first electrode line 20 and the second electrode line 30 will be significantly changed, and the sensing sensitivity is greatly improved.

[0151] In some embodiments, the number of the first electrode lines 20 and the second electrode lines 30 disposed on the sensing area 111 is greater than or equal to 2, and the first electrode units 21 and the second electrode units 31 are arranged in an array in the sensing area 111. The more the number of the first electrode lines 20 and the second electrode lines 30 is, the more the number of the first electrode units 21 and the second electrode units 31 is, and the higher the sensitivity of the sensing panel is.

[0152] Step S140 : forming a protection layer 60 covering the variable resistance layer 50 .

[0153] In some embodiments, the material of the protection layer 60 may be an inorganic material, including at least one of silicon nitride and silicon oxide.

[0154] Corresponding to the above-mentioned stretchable panel, after step S140, the protective layer 60 needs to be patterned to etch away the inorganic protective layer 60 in the through hole of the opening area 12. The specific method is to apply photoresist, expose and develop, and form a photolithography pattern. The pattern of the photolithography pattern coincides with the pattern projection of the through hole of the opening area 12. The photolithography pattern exposes the through hole of the opening area 12, and then dry etching is used to remove the inorganic layer not covered by the photoresist on the surface to etch away the inorganic protective layer 60 in the through hole of the opening area 12. At this time, the variable resistance layer 50 and the flexible substrate are below the opening of the buffer layer, both of which are organic materials. When the photoresist above the protective layer 60 is removed, the protective layer 60 can be used as a hard mask, and the variable resistance layer 50 in the through hole of the buffer layer and the flexible substrate can be etched together by the dry etching gas (such as oxygen) for etching the organic layer. Even if the photoresist above the protective layer 60 is thin, and the variable resistance layer 50 in the through hole of the buffer layer and the flexible substrate are thick, under the protection of the protective layer 60, this etching step will not affect the variable resistance layer 50 below the protective layer 60, thereby simplifying the process and reducing costs.

[0155] Subsequently, the module binding process can be carried out to bind the external chip to the sensing panel.

[0156] The method for preparing a stretchable sensing panel provided in an embodiment of the present application covers a variable resistance layer 50 on the cross-insulated first electrode lines 20 and second electrode lines 30. When the variable resistance layer 50 is subjected to pressure, the resistance changes, causing changes in the electrical signals on the first electrode lines 20 and the second electrode lines 30. The sensitivity is greatly improved, and the force position can be fed back through mechanical sensing with a small force, and the position and size can be digitally recorded, and the difficulty of integration is greatly reduced.

[0157] An embodiment of the present application further provides a sensing device, which includes the sensing panel of any of the above embodiments or the sensing panel prepared by the preparation method of any of the above embodiments.

[0158] In some embodiments, the sensing device is a wearable sensing device.

[0159] The above are only preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and changes. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application. Although the implementation methods disclosed in the present application are as above, the content is only an implementation method adopted to facilitate the understanding of the present application and is not intended to limit the present application. Any technician in the technical field to which the present application belongs can make any modifications and changes in the form and details of the implementation without departing from the spirit and scope disclosed in the present application, but the protection scope of the present application shall still be subject to the scope defined by the attached claims.

Claims

1. A sensor panel, characterized in that: include: A substrate base, wherein the substrate base comprises at least one sensing region; At least one first electrode line is disposed on the sensing area at intervals and extends along a first direction; At least one second electrode line is disposed on the sensing area at intervals and extends along a second direction; wherein the second electrode line is disposed to cross and be insulated from the first electrode line; a variable resistance layer covering the first electrode line and the second electrode line; The material of the variable resistance layer includes a siloxane material and thorny hollow carbon microspheres dispersed in the siloxane material.

2. The sensing panel according to claim 1, characterized in that: The resistance of the variable resistance layer changes as the pressure applied to it changes.

3. The sensing panel according to claim 1, characterized in that: The second electrode line includes a plurality of second electrode units and a second connecting bridge connecting two adjacent second electrode units; Wherein, the second connection bridge is arranged to cross the first electrode line, and the second connection bridge is insulated from the first electrode line by an insulating block; The second electrode units and the first electrode lines are located in the same layer.

4. The sensing panel according to claim 3, characterized in that: The first electrode line includes a plurality of first electrode units and a first connecting bridge connecting two adjacent first electrode units; The second connection bridge is arranged crosswise with the first connection bridge, and the second connection bridge is insulated from the first connection bridge by the insulation block.

5. The sensing panel according to claim 4, characterized in that: The minimum distance between adjacent first electrode units and second electrode units is greater than the diameter of the thorny hollow carbon microspheres.

6. The sensing panel according to claim 1, characterized in that: The sensing panel is a stretchable panel.

7. The sensing panel according to claim 6, characterized in that: The substrate includes a plurality of island regions arranged in an array, an opening region between two adjacent island regions, and a bridge region for connecting two adjacent island regions; Wherein, each of the island areas includes at least one sensing area; The opening area is provided with a through hole penetrating the substrate.

8. The sensing panel according to claim 7, characterized in that: The bridge area is provided with a first signal line connecting the first electrode lines on two corresponding adjacent island areas, and / or a second signal line connecting the second electrode lines on two corresponding adjacent island areas.

9. The sensing panel according to claim 1, characterized in that: The substrate base includes a flexible substrate.

10. The sensing panel according to claim 1, characterized in that: Also includes: A protection layer covers the variable resistance layer.

11. A method for preparing a sensor panel according to any one of claims 1 to 10, characterized in that: include: Providing a substrate; wherein the substrate comprises at least one sensing area; At least one first electrode line is formed on the sensing area and is arranged at intervals and extends along a first direction, and at least one second electrode line is formed on the sensing area and is arranged at intervals and extends along a second direction; wherein the second electrode line is arranged to cross and be insulated from the first electrode line; forming a variable resistance layer covering the first electrode line and the second electrode line; The material of the variable resistance layer includes a siloxane material and thorny hollow carbon microspheres dispersed in the siloxane material.

12. The preparation method according to claim 11, characterized in that: Forming at least one first electrode line disposed at intervals and extending along a first direction on the sensing region, and forming at least one second electrode line disposed at intervals and extending along a second direction on the sensing region, comprising the following steps: At least one first electrode line is formed on the sensing area and is arranged at intervals and extends along a first direction, and a plurality of rows of second electrode units are formed on the sensing area and are arranged along a second direction; wherein the first direction intersects with the second direction; A plurality of insulating blocks are formed above the first electrode lines; wherein the orthographic projection of the insulating blocks on the base substrate at least covers the orthographic projection of the first electrode line portion between two adjacent second electrode units in the same row on the base substrate; A plurality of second connection bridges are formed above the insulating block, wherein the second connection bridges extend to both sides of the insulating block to connect the second electrode units respectively located on both sides of the insulating block, thereby forming second electrode lines extending along the second direction.

13. A sensing device, characterized in that: The invention comprises a sensing panel as claimed in any one of claims 1 to 10 or a sensing panel prepared by using a preparation method as claimed in any one of claims 11 to 12.

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