A high temperature resistant insulating film, preparation method and application thereof

Abstract

The present invention discloses a high temperature resistant insulating film, a preparation method and an application thereof. Specifically, the dielectric layer of the insulating film material contains resin, a curing agent and a filler, the resin contains at least one solid epoxy resin and an isocyanate resin, and the weight ratio of the isocyanate resin in the resin component is 10-40wt%. After the insulating film material is cured, a high temperature resistant and high reliability film material is obtained.

Description

Technical Field

[0001] The present invention belongs to the technical field of electronic packaging materials, and more specifically, the present invention relates to an insulating adhesive film material used for semiconductor system-level packaging. Background Art

[0002] With the development of electronic information technology, higher and higher requirements are put forward for the miniaturization, lightness, multi-function and high performance of electronic systems, and the demand for HDI substrates, FCBGA and IC packaging substrates is increasing day by day. Traditional insulating dielectric materials are increasingly difficult to meet the needs of high-frequency, high-speed and high-end substrates. Therefore, it is necessary to develop insulating film materials with better temperature resistance and higher reliability and their preparation methods to solve the problems of material cracking and device failure at high temperatures, so as to meet the rapidly increasing material requirements of packaging substrates. Summary of the invention

[0003] In order to solve the problems raised in the above background technology, the purpose of the present invention is to provide a multifunctional insulating adhesive film material that can be used for semiconductor packaging and is suitable for preparing fine circuits by additive or semi-additive methods. The multifunctional insulating adhesive film material has a wide temperature application range, and in particular can solve the problems of material cracking and device failure of the insulating film material at high temperatures, while maintaining low dielectric loss.

[0004] In order to achieve the above object, one aspect of the present invention provides an electronic paste composition for a dielectric layer, wherein the electronic paste composition comprises a resin, a curing agent and a filler;

[0005] The resin at least comprises a solid epoxy resin and a liquid isocyanate resin; the solid epoxy resin is solidified at room temperature, and the liquid isocyanate resin is liquid at room temperature and contains two isocyanate groups. The room temperature is 20-35°C.

[0006] Furthermore, the isocyanate resin accounts for 10 to 40 wt % of the total mass of the resin, preferably 12 to 35 wt %, and more preferably 15 to 25 wt %.

[0007] The resin is composed of at least one solid epoxy resin and one liquid isocyanate resin.

[0008] Furthermore, the solid epoxy resin is selected from one or more combinations of solid bisphenol A epoxy resin, solid biphenyl epoxy resin, solid naphthalene epoxy resin, solid o-cresol resin, solid bisphenol A novolac epoxy resin, solid dicyclopentadiene epoxy resin, solid phenol aralkyl epoxy resin, solid multifunctional epoxy resin, and solid isocyanate modified epoxy resin.

[0009] Preferably, the solid bisphenol A epoxy resin is such as Nan Ya NPES-901, NPES-902, NPES-903, NPES-904, NPES-907, NPES-909; solid biphenyl epoxy resin is such as Mitsubishi Chemical's YX4000, YX4000K, YX4000H, YX4000HK, YL612H, YXL612HN; solid naphthalene epoxy resin is such as NC-7300L, NC-7700L, NC-7000L, solid anthracene epoxy resin is such as YX8800, etc.; solid o-cresol resin is such as Nan Ya's NPCN-701, NPCN-702, NPCN-703, NPCN-704, NPCN-704L, NPCN-704K80, NPPN-638S, NPPN-631, CVC's EPALLOY The solid phenolic epoxy resin is selected from Epalloy8240, Epalloy8240E, Epalloy8250, Epalloy8330, etc. produced by CVC, solid dicyclopentadiene epoxy resin such as CYDB-500, CYDB-700, CYDB-900, CYDB-400, CYDB-450A80, ​​etc. produced by Yueyang Baling Petrochemical, solid phenol aralkyl epoxy resin, solid multifunctional epoxy resin such as NPPN-431A70 produced by Nan Ya, ERISYS GA-240 produced by CVC, etc., solid isocyanate modified epoxy resin such as XP-100, XP8110, etc. of Adeka, or a combination of one or more thereof.

[0010] Further, the isocyanate resin is a non-polymer diisocyanate, preferably a combination of one or more selected from isophorone diisocyanate, hydrogenated diphenylmethane diisocyanate, hexamethylene-1,6-diisocyanate, 1,5-naphthalene diisocyanate, 4,4'-diphenylmethane diisocyanate, modified diphenylmethane-4,4'-diisocyanate, toluene-2,4-diisocyanate, toluene diisocyanate, dicyclohexylmethane diisocyanate, and lysine diisocyanate.

[0011] Furthermore, the filler is an inorganic filler particle, preferably, a combination of one or more selected from zirconium tungstate, silicon dioxide, aluminum oxide, boron nitride, titanium dioxide, zinc oxide, zirconium oxide, magnesium oxide, calcium carbonate, barium titanate, strontium titanate, barium strontium titanate, lead zirconate titanate, and copper calcium titanate.

[0012] Furthermore, the size of the inorganic filler particles is 20 nm to 10 μm, preferably 50 nm to 3 μm, more preferably 200 nm to 1 μm, or a mixture of multiple sizes.

[0013] Furthermore, the shape of the inorganic filler particles is mainly spherical or quasi-spherical particles, and some particles of other shapes such as rods, wires, sheets, etc. or particles of core-shell structure may also exist.

[0014] Furthermore, the specific surface area of ​​the inorganic filler particles is 0.1 to 50 m 2 / g, preferably 0.5 to 35 m 2 / g, more preferably 1 to 20 m 2 / g.

[0015] Furthermore, the filler accounts for 10% to 85% of the total mass of the components in the electronic paste composition except the solvent, for example, 20%, 30%, 40%, 50%, 60%, 70%, 80%.

[0016] Furthermore, the curing agent is selected from a combination of one or more of solid phenolic resin, solid polyester resin and solid acid anhydride.

[0017] Furthermore, the solid acid anhydride curing agent is selected from benzophenone tetracarboxylic anhydride, methyl endomethylene tetrahydrophthalic anhydride, glutaric anhydride, polyazelaic anhydride, dichloromaleic anhydride, methylhexahydrophthalic anhydride, phthalic anhydride, trimellitic anhydride, pyrophthalic anhydride, phthalic anhydride, dibenzophenone tetracarboxylic anhydride, maleic anhydride, dodecyl maleic anhydride, succinic anhydride, hexahydrophthalic anhydride, cyclopentanetetracarboxylic anhydride, dimaleic anhydride-based methylethylbenzene, etc., the solid polyester resin curing agent mainly includes saturated polyester resin and unsaturated polyester resin, etc., the solid phenolic resin curing agent includes linear phenol formaldehyde resin, linear bisphenol A formaldehyde resin, XYLOK phenolic resin, biphenyl phenolic resin, trifunctional phenolic resin, etc.

[0018] Furthermore, the curing agent is added in an amount based on a ratio of the sum of the phenolic hydroxyl equivalent, the acid anhydride equivalent, the cyano equivalent and the epoxy equivalent of 0.1 to 1.2.

[0019] Furthermore, the electronic paste composition further comprises a solvent, and the solvent is a volatile solvent, preferably, selected from aromatic solvents, halogenated hydrocarbon solvents, aliphatic hydrocarbon solvents, alcohol solvents, ester solvents, ketone solvents, and amide solvents.

[0020] Furthermore, aromatic solvents such as xylene, o-xylene, m-xylene, p-xylene, hexamethylbenzene, ethylbenzene, etc.; halogenated hydrocarbons such as chlorobenzene, dichlorobenzene, dichloromethane, etc.; aliphatic hydrocarbons such as pentane, hexane, octane, etc.; alicyclic hydrocarbons such as cyclohexane, cyclohexanone, toluene, cyclohexanone, etc.; alcohols such as methanol, ethanol, isopropanol, etc.; esters such as methyl acetate, ethyl acetate, propyl acetate, etc.; ketones such as acetone, 2-butanone, methyl isobutyl ketone, etc.; amides such as one or more of dimethylformamide, hexamethylphosphoramide, N-methylformamide, dimethylacetamide, etc.

[0021] Furthermore, the electronic paste composition consists of a resin, a curing agent, a filler and a solvent, and the resin consists of a solid epoxy resin and a liquid isocyanate resin.

[0022] Another aspect of the present invention provides an insulating adhesive film dielectric layer, wherein the insulating adhesive film dielectric layer is made of the above-mentioned electronic paste composition for dielectric layer.

[0023] Furthermore, the preparation method comprises placing the electronic paste composition on a substrate, and removing the solvent in the electronic paste composition under normal pressure or reduced pressure.

[0024] Furthermore, the electronic paste composition is disposed on the substrate by coating, and the coating method is one of gravure printing, micro gravure printing, comma blade, slit extrusion, and the like.

[0025] Furthermore, the solvent in the electronic paste composition is removed by heating, and the heating temperature is 50°C to 150°C, preferably 55°C to 100°C, and more preferably 60°C to 90°C.

[0026] Furthermore, the glass transition temperature of the electronic paste composition of the present invention after thermal curing is above 150°C, preferably above 160°C, and more preferably 170-200°C.

[0027] Furthermore, the decomposition temperature of the electronic paste composition of the present invention after thermal curing is above 360°C, preferably above 380°C, and more preferably 380-400°C.

[0028] Another aspect of the present invention provides an insulating film material, which comprises a three-layer structure of a carrier film, the insulating film dielectric layer and a covering film; the insulating film dielectric layer is located between the carrier film and the covering film.

[0029] Furthermore, the thickness of the insulating film dielectric layer is 0.5 μm to 200 μm, preferably 20 μm to 80 μm, and more preferably 30 μm to 50 μm.

[0030] Furthermore, the carrier film is selected from polymer film materials and paper-based film materials that can withstand temperatures above 160°C; preferably, polyester film (PET), polyetheretherketone film (PEEK), polyetherimide film (PEI), polyimide film (PI), polycarbonate film (PC), release paper, and coated paper containing a release layer.

[0031] Furthermore, the thickness of the carrier film is 10 to 150 μm, preferably 15 to 70 μm, and more preferably 20 to 50 μm. When the temperature resistance of the carrier film is less than 160°C, the carrier film will be deformed during the thermal curing stage of the insulating film during use, causing unevenness of the film dielectric layer, affecting the product yield. The peeling force of the film material can be selected from 3g / 25cm to 150g / 25cm, preferably 30g / 25cm to 120g / 25cm, and more preferably 70g / 25cm to 100g / 25cm. When the peeling force of the support film is less than 3g / 25cm, the slurry of the insulating dielectric composite material cannot be applied to the surface of the release film. When the peeling force of the support film is greater than 150g / 25cm, the insulating dielectric composite material cannot be peeled off after curing. The type and thickness of the release layer are not limited, as long as it can ensure that the electronic slurry can be spread into a uniform film on the carrier film and the insulating film can be separated from the carrier film after curing.

[0032] Furthermore, the covering film material is selected from polymer film materials and paper-based film materials, preferably biaxially oriented polypropylene film (BOPP), polyester film (PET), polyetheretherketone film (PEEK), polyetherimide film (PEI), polyimide film (PI), polycarbonate film (PC), release paper, coated paper, etc.

[0033] Furthermore, the thickness of the covering film material is 5 to 80 μm, preferably 8 to 50 μm, and more preferably 10 to 20 μm.

[0034] Another aspect of the present invention provides a method for continuously preparing the above-mentioned insulating film material, which comprises the following steps:

[0035] S1) preparing the electronic paste composition for the dielectric layer;

[0036] S2) coating the electronic paste composition on the surface of the carrier film, removing the solvent therein, and then laminating it with a cover film to obtain the insulating adhesive film material of the present invention.

[0037] Furthermore, the mixing method of the electronic paste composition in step S1) includes one or more combinations of stirring, ball milling, sand milling, ultrasound, etc.

[0038] Furthermore, in step S2), the coating method of the electronic paste can be gravure printing, micro gravure printing, comma blade, slit extrusion, etc., and the solvent baking temperature is 50°C to 150°C, preferably 55°C to 100°C, and more preferably 60°C to 90°C.

[0039] Furthermore, in step S1), the bonding temperature is from room temperature to 150°C.

[0040] Another aspect of the present invention provides the use of the above insulating film material as an insulating material for preparing fine circuits by an addition process or a semi-addition process.

[0041] Beneficial Effects

[0042] The dielectric layer of the insulating film material of the present invention can be applied to semiconductor electronic packaging fields such as packaging substrates, packaging carriers, fan-out type board-level packaging rewiring, etc., so as to develop insulating film materials with better temperature resistance and higher reliability and their preparation methods, solve the problems of material cracking and device failure at high temperatures, and adapt to the rapidly improving material requirements of packaging substrates. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 It is a schematic diagram of the structure of the insulating film material, wherein 1-1 is the covering film material, 1-2 is the dielectric film 1, and 1-3 is the carrier film material. DETAILED DESCRIPTION

[0044] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, the specific implementation modes of the present invention are described in detail below, but it should not be understood as limiting the applicable scope of the present invention.

[0045] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, the specific implementation modes of the present invention are described in detail below with reference to the accompanying drawings, but they should not be construed as limiting the applicable scope of the present invention.

[0046] This embodiment provides a dielectric layer suitable for semiconductor electronic packaging fields such as packaging substrates, packaging carriers, fan-out type panel-level packaging rewiring, etc., so as to develop an insulating film material with better temperature resistance and higher reliability and a preparation method thereof, solve the problems of material cracking and device failure at high temperatures, and adapt to the rapidly increasing material requirements of packaging substrates.

[0047] The weight of each component was weighed according to the ratio of each component in Table 1, and six ratios of epoxy resin composite electronic pastes of Examples 1 to 3 and Comparative Examples 1 to 3 were obtained by ball milling. The rotation speed during ball milling was 600 rpm / min, the grinding medium was a zirconia ball with a diameter of 1 mm, and the ball milling time was 12 hours.

[0048] Four epoxy resin composite electronic pastes A, B, C and D are coated on the surface of the carrier film to form dielectric films with different dry film thicknesses, and then the BOPP cover film is attached.

[0049] After the insulating film material is thermally cured, its DSC, ie, glass transition temperature, is tested.

[0050] Table 1: Proportions of 8 electronic paste compositions for dielectric layers

[0051]

[0052]

[0053]

[0054] Example 1

[0055] The method for preparing the multilayer insulating film material involved in the present invention by a continuous method uses Example 1 in Table 1 as the electronic paste of the dielectric film. Then the electronic paste is coated on a PET release film with a thickness of 32 μm, the thickness of the dielectric film is 25 μm, and then dried at 70°C for 3 minutes. The dried insulating polymer composite film is hot-pressed and compounded with a BOPP film with a thickness of 20 μm. During the hot-pressing process, the temperature of the heating roller is set to 80°C and the heating pressure is 5 kg. After hot pressing, an insulating film material with a three-layer structure is obtained. Finally, it is cured at 100°C for 30 minutes and 180°C for 90 minutes. The cured insulating film sample is placed in TGA and DSC for testing. The Tg obtained by the above method is 179°C and Td is 390°C. If comparative example 1 is used as the electronic paste of the dielectric film, the glass transition temperature and thermal decomposition temperature of the insulating film will be reduced, and the material will crack and the device will fail at high temperatures.

[0056] Example 2

[0057] The method for preparing the multilayer insulating film material involved in the present invention by a step-by-step method uses Example 2 in Table 1 as the electronic paste of the dielectric film. Then the electronic paste is coated on a PET release film with a thickness of 32 μm, the thickness of the dielectric film is 25 μm, and then dried at 50°C for 2 minutes and 70°C for 3 minutes. The dried insulating polymer composite film is hot-pressed with a BOPP film with a thickness of 20 μm. During the hot-pressing process, the temperature of the heating roller is set to 80°C and the heating pressure is 5 kg. After hot pressing, an insulating film material with a three-layer structure is obtained. Finally, it is cured at 100°C for 30 minutes and 180°C for 90 minutes. The cured insulating film sample is put into TGA and DSC for testing. After the above-mentioned method, the Tg is 190°C and the Td is 400°C. If comparative example 2 is used as the electronic paste of the dielectric film, the insulating film will have poor mechanical properties and high dielectric loss, and it is easy to crack, affecting the electrical performance and reliability of the device.

[0058] Example 3

[0059] The method for preparing the multilayer insulating film material involved in the present invention by a step-by-step method uses Example 3 in Table 1 as the electronic paste in the dielectric film. The thickness of the dielectric film is 30 μm. Then the electronic paste is coated on a PET release film with a thickness of 32 μm, the thickness of the dielectric film is 25 μm, and then dried at 60°C for 5 minutes. The dried insulating polymer composite film is hot-pressed with a BOPP film with a thickness of 20 μm. During the hot-pressing process, the temperature of the heating roller is set to 80°C and the heating pressure is 5 kg. After hot pressing, an insulating film material with a three-layer structure is obtained. Finally, it is cured at 100°C for 30 minutes and 180°C for 90 minutes. The cured insulating film sample is placed in TGA and DSC for testing. The Tg obtained by the above method is 185°C and Td is 380°C. If comparative example 3 is used alone as the electronic paste of the dielectric film, the glass transition temperature and thermal decomposition temperature of the insulating film will be reduced, and the material will crack and the device will fail at high temperatures.

[0060] Example 4

[0061] A method for preparing the multilayer insulating film material involved in the present invention by a continuous process, using Example 4 in Table 1 as the electronic paste of the dielectric film. Then the electronic paste is coated on a PET release film with a thickness of 35 μm, the thickness of the dielectric film is 20 μm, and then dried at 60°C for 3 minutes. The dried insulating polymer composite film is hot-pressed and compounded with a BOPP film with a thickness of 20 μm. During the hot-pressing process, the temperature of the heating roller is set to 80°C and the heating pressure is 5 kg. After hot pressing, an insulating film material with a three-layer structure is obtained. Finally, it is cured at 100°C for 30 minutes and 170°C for 90 minutes. The cured insulating film sample is placed in TGA and DSC for testing. The Tg obtained by the above method is 189°C and Td is 395°C. If comparative example 4 is used as the electronic paste of the dielectric film, the high-frequency dielectric loss of the insulating film will increase, which will easily increase the energy consumption ratio of components.

[0062] From the above results, it can be seen that if only solid epoxy resin is used in the dielectric layer to prepare the insulating film material, the insulating film material has low temperature resistance and is not suitable for high temperature scenes. If only isocyanate resin is used in the dielectric layer, the insulating film has low mechanical properties and high dielectric loss, which affects the electrical properties and reliability of the insulating film material. When the isocyanate resin content is lower than 10wt%, the high temperature resistance of the material cannot be reflected. When the isocyanate resin content is higher than 40wt%, the mechanical properties of the composite material deteriorate, it is brittle and has a high water absorption rate, resulting in high high-frequency dielectric loss, and it cannot be used in high-frequency and high-speed packaging devices. In the insulating film material, adding at least one solid epoxy resin and liquid isocyanate resin at the same time can not only effectively obtain high temperature resistance, but also ensure that the insulating film material has high frequency and low dielectric loss.

Claims

1. An electronic paste composition for a dielectric layer, characterized in that: The electronic paste composition comprises a resin, a curing agent and a filler; The resin comprises at least one solid epoxy resin and one liquid isocyanate resin; the solid epoxy resin is solidified at room temperature, and the liquid isocyanate resin is liquid at room temperature and contains two isocyanate groups; Wherein, the liquid isocyanate resin accounts for 15-25wt% of the total mass of the resin, and the normal temperature is 20-35°C; The liquid isocyanate resin is selected from one or more of isophorone diisocyanate, hydrogenated diphenylmethane diisocyanate, hexamethylene-1,6-diisocyanate, 1,5-naphthalene diisocyanate, 4,4'-diphenylmethane diisocyanate, modified diphenylmethane-4,4'-diisocyanate, toluene diisocyanate, dicyclohexylmethane diisocyanate, and lysine diisocyanate.

2. The electronic paste composition according to claim 1, characterized in that The solid epoxy resin is selected from one or more combinations of solid bisphenol A epoxy resin, solid biphenyl epoxy resin, solid naphthalene epoxy resin, solid o-cresol resin, solid bisphenol A novolac epoxy resin, solid dicyclopentadiene epoxy resin, solid phenol aralkyl epoxy resin, solid multifunctional epoxy resin, and solid isocyanate modified epoxy resin.

3. The electronic paste composition according to any one of claims 1 to 2, characterized in that: The filler is inorganic filler particles.

4. The electronic paste composition according to claim 3, characterized in that The inorganic filler particles are selected from one or more combinations of zirconium tungstate, silicon dioxide, aluminum oxide, boron nitride, titanium dioxide, zinc oxide, zirconium oxide, magnesium oxide, calcium carbonate, barium titanate, strontium titanate, barium strontium titanate, lead zirconate titanate, and copper calcium titanate.

5. The electronic paste composition according to claim 4, characterized in that The inorganic filler particles have a size of 20 nm to 10 μm or a mixture of multiple sizes.

6. The electronic paste composition according to claim 5, characterized in that The size of the inorganic filler particles is 50 nm to 3 μm.

7. The electronic paste composition according to claim 5, characterized in that The size of the inorganic filler particles is 200nm-1μm.

8. The electronic paste composition according to claim 4, characterized in that The inorganic filler particles are in the shape of spherical or quasi-spherical particles, some particles in other shapes, or particles with core-shell structures.

9. The electronic paste composition according to claim 4, characterized in that The specific surface area of ​​the inorganic filler particles is 0.1 to 50 m 2 / g.

10. The electronic paste composition according to claim 9, characterized in that: The specific surface area of ​​the inorganic filler particles is 0.5 to 35 m 2 / g.

11. The electronic paste composition according to claim 10, characterized in that The specific surface area of ​​the inorganic filler particles is 1 to 20 m 2 / g.

12. The electronic paste composition according to claim 3, characterized in that: The filler accounts for 10% to 85% of the total weight of the components in the electronic paste composition except the solvent.

13. The electronic paste composition according to any one of claims 1 to 2, characterized in that: The curing agent is selected from a combination of one or more of solid phenolic resin, solid polyester resin and solid acid anhydride.

14. The electronic paste composition according to claim 13, characterized in that: The solid acid anhydride curing agent is selected from benzophenone tetracarboxylic anhydride, methyl endomethylene tetrahydrophthalic anhydride, glutaric anhydride, polyazelaic anhydride, dichloromaleic anhydride, methylhexahydrophthalic anhydride, phthalic anhydride, trimellitic anhydride, pyrophthalic anhydride, phthalic anhydride, benzophenone tetracarboxylic anhydride, maleic anhydride, dodecyl maleic anhydride, succinic anhydride, hexahydrophthalic anhydride, cyclopentanetetracarboxylic anhydride, and dimaleic anhydride-based ethylbenzene; the solid polyester resin curing agent is selected from saturated polyester resin and unsaturated polyester resin; the solid phenolic resin curing agent is selected from linear phenol formaldehyde resin, linear bisphenol A formaldehyde resin, XYLOK phenolic resin, biphenyl phenolic resin, and trifunctional phenolic resin.

15. The electronic paste composition according to claim 13, characterized in that: The curing agent is added in an amount based on a ratio of the sum of the phenolic hydroxyl equivalent, the acid anhydride equivalent, the cyano equivalent and the epoxy equivalent of 0.1 to 1.

2.

16. The electronic paste composition according to any one of claims 1 to 2, characterized in that: The electronic paste composition further comprises a solvent, and the solvent is a volatile solvent.

17. The electronic paste composition according to claim 16, characterized in that: The volatile solvent is selected from aromatic solvents, halogenated hydrocarbon solvents, aliphatic hydrocarbon solvents, alcohol solvents, ester solvents, ketone solvents, and amide solvents.

18. The electronic paste composition according to claim 17, characterized in that The aromatic solvent is selected from xylene, o-xylene, m-xylene, p-xylene, hexamethylbenzene, and ethylbenzene; the halogenated hydrocarbon solvent is selected from chlorobenzene, dichlorobenzene, and dichloromethane; the aliphatic hydrocarbon solvent is selected from pentane, hexane, and octane; the alicyclic hydrocarbon solvent is selected from cyclohexane, cyclohexanone, toluene, and cyclohexanone; the alcohol solvent is selected from methanol, ethanol, and isopropanol; the ester solvent is selected from methyl acetate, ethyl acetate, and propyl acetate; the ketone solvent is selected from acetone, 2-butanone, and methyl isobutyl ketone; the amide solvent is selected from one or more of dimethylformamide, hexamethylphosphoramide, N-methylformamide, and dimethylacetamide.

19. An insulating film dielectric layer, characterized in that: The insulating adhesive film dielectric layer is made of the electronic paste composition for dielectric layer according to any one of claims 1 to 18.

20. The insulating film dielectric layer according to claim 19, characterized in that: The preparation method comprises placing the electronic paste composition on a substrate, and removing the solvent in the electronic paste composition under normal pressure or reduced pressure.

21. The insulating film dielectric layer according to claim 19, characterized in that: The electronic paste composition is disposed on the substrate by coating, such as drill gravure printing, micro gravure printing, comma blade, slot extrusion.

22. The insulating film dielectric layer according to claim 20, characterized in that: The method for removing the solvent in the electronic paste composition is heating, and the heating temperature is 50°C to 150°C.

23. The insulating film dielectric layer according to claim 22, characterized in that: The heating temperature is 55°C to 100°C.

24. The insulating film dielectric layer according to claim 23, characterized in that: The heating temperature is 60°C to 90°C.

25. An insulating film material, characterized in that: The insulating film material comprises a three-layer structure of a carrier film, the insulating film dielectric layer as claimed in any one of claims 19 to 24, and a covering film; the insulating film dielectric layer is located between the carrier film and the covering film.

26. The insulating film material according to claim 25, characterized in that: The thickness of the insulating film dielectric layer is 0.5 μm to 200 μm.

27. The insulating film material according to claim 26, characterized in that: The thickness of the insulating film dielectric layer is 20 μm to 80 μm.

28. The insulating film material according to claim 27, characterized in that: The thickness of the insulating film dielectric layer is 30 μm to 50 μm.

29. The insulating film material according to claim 25, characterized in that: The carrier film is selected from polymer film materials and paper-based film materials, which are film materials that can withstand temperatures above 160°C.

30. The insulating film material according to claim 25, characterized in that: The carrier film is selected from polyester film (PET) containing a release layer, polyetheretherketone film (PEEK), polyetherimide film (PEI), polyimide film (PI), polycarbonate film (PC), release paper, and coated paper.

31. The insulating film material according to claim 25, characterized in that: The thickness of the carrier film is between 10 and 150 μm.

32. The insulating film material according to claim 25, characterized in that: The thickness of the carrier film is 15 to 70 μm.

33. The insulating film material according to claim 25, characterized in that: The covering film material is selected from polymer film materials and paper-based film materials.

34. The insulating film material according to claim 33, characterized in that: The covering film materials are biaxially oriented polypropylene film (BOPP), polyester film (PET), polyetheretherketone film (PEEK), polyetherimide film (PEI), polyimide film (PI), polycarbonate film (PC), release paper, and coated paper.

35. The insulating film material according to claim 33, characterized in that: The thickness of the covering film material is 5 to 80 μm.

36. The insulating film material according to claim 33, characterized in that: The thickness of the covering film material is 8 to 50 μm.

37. A method for continuously preparing the insulating film material according to any one of claims 25 to 36, characterized in that: It includes the following steps: S1) preparing the electronic paste composition for the dielectric layer; S2) coating the electronic paste composition on the surface of the carrier film, removing the solvent therein, and then laminating it with a cover film to obtain the insulating adhesive film material according to any one of claims 25 to 36.

38. The preparation method according to claim 37, characterized in that: The mixing method of the electronic paste composition in step S1) includes one or more combinations of stirring, ball milling, sand milling, and ultrasound.

39. The preparation method according to claim 37, characterized in that: In step S2), the coating method of the electronic paste is gravure printing, micro gravure printing, comma scraper, slit extrusion, and the solvent baking temperature is 50°C to 150°C.

40. The preparation method according to claim 39, characterized in that: In step S2), the solvent baking temperature is 55°C to 100°C.

41. The preparation method according to claim 37, characterized in that: In step S2), the bonding temperature is from room temperature to 150°C.

42. Use of the insulating film material according to any one of claims 25 to 36 as an insulating material for preparing fine circuits by an addition process or a semi-addition process.

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