Substrate processing equipment

Abstract

The substrate processing device includes a processing chamber, an upper electrode, a lower electrode, a substrate mounting element and a variable capacitor. The upper electrode is arranged in the upper part of the inner side of the processing chamber and is arranged to be separated from the upper surface of the processing chamber. The lower electrode is arranged to be separated from the upper electrode at a fixed distance from the upper electrode. The substrate mounting element is electrically grounded and arranged to face the lower electrode at a fixed distance from the lower electrode, and a substrate is mounted in the substrate mounting element. The variable capacitor is connected between the lower electrode and the ground layer or between the lower electrode and the output end of the radio frequency power supply.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus for dividing radio frequency power from a single radio frequency power supply so as to generate a first plasma and a second plasma in different regions. Background Art

[0002] A conventional substrate processing device includes a substrate mounting element and an upper electrode, the substrate mounting element serving as an electrode supporting a substrate, and the upper electrode being vertically separated from the substrate mounting element to face the substrate mounting element. When a radio frequency power source is applied to the upper electrode, an inductively coupled plasma is generated between the upper electrode and the substrate mounting element. The substrate disposed on the substrate mounting element is subjected to plasma treatment. The plasma can decompose the reaction gas to deposit a thin film on the substrate. The upper electrode serves as a gas supply unit, and a mixed gas containing a plurality of gases provided from the upper electrode is ejected through a plurality of nozzles, wherein the plurality of nozzles are formed on the lower surface of the upper electrode. Therefore, the plurality of nozzles can uniformly inject gas into a large area of ​​the substrate. The upper electrode serves as an injection structure and an electrode at the same time. The shape of the surface of the upper electrode and the shape of the nozzle are adjusted to provide a large-area film quality and a control effect of film formation uniformity. However, a large amount of plasma generated between the upper electrode and the substrate mounting element is limited in controlling the large-area film quality and film formation uniformity due to diffusion characteristics.

[0003] With the recent increase in demand for large-area flat panel displays (FPDs), high-quality organic films need to be formed. In addition, in large-area packaging processes or oxide semiconductor deposition processes, there is a growing demand for atomic layer deposition (ALD) that forms thin films by alternately injecting two gases. Summary of the invention

[0004] Technical issues

[0005] An exemplary embodiment of the present invention provides a substrate processing device, in which a radio frequency power source is distributed between an upper electrode and a lower electrode stacked on each other to generate a first plasma and a second plasma in different regions, respectively. The substrate processing device may be a parallel plate capacitively coupled plasma apparatus, which includes an upper electrode, a lower electrode, and a grounded substrate mounting element, the upper electrode having a convex portion, and the lower electrode having an opening aligned with the convex portion. A first gas is supplied to a substrate through a first gas path formed in the upper electrode, and a first plasma is generated between the convex portion of the upper electrode and the substrate mounting element. In addition, a second gas is supplied to the substrate through a second gas path located between the upper electrode and the lower electrode, and a second plasma is generated between the lower electrode and the substrate mounting element. The first plasma and the second plasma can be generated by distributing power from a single radio frequency power supply and receiving the distributed power. The distribution ratio of power for generating the first plasma and the second plasma can be achieved by adjusting the capacitance value of the variable capacitor, wherein the variable capacitor is connected between the lower electrode and the ground layer or the upper electrode, and between the output end of the RF power supply and the lower electrode.

[0006] Example embodiments of the present invention provide a substrate processing apparatus in which radio frequency power is randomly distributed to each of upper and lower electrodes to perform plasma enhanced atomic layer deposition.

[0007] Technical Solution

[0008] A substrate processing device according to an exemplary embodiment includes a processing chamber, an upper electrode, a lower electrode, a substrate mounting element, and a variable capacitor. The upper electrode has a plurality of protrusions, which are separated from the upper surface of the upper portion of the processing chamber to protrude downward. The lower electrode is disposed below the upper electrode. The substrate mounting element is electrically grounded and disposed to face the lower electrode, and the substrate mounting element is provided for substrate mounting. The variable capacitor is connected between the lower electrode and the ground layer or between the lower electrode and the radio frequency power supply.

[0009] In an example embodiment, the upper electrode may be connected to an RF power supply to generate a first plasma between the protrusion and the substrate mounting component, and an RF power of the RF power supply may generate a second plasma between the lower electrode and the substrate mounting component.

[0010] In an example embodiment, the first gas may be supplied to the substrate mounting element through a first nozzle formed in the protrusion, and the second gas may be supplied to the substrate mounting element through an opening by a second nozzle formed in the lower surface of the upper electrode.

[0011] In an example embodiment, the protrusions and the plurality of first nozzles may be periodically disposed in a matrix form, and the plurality of second nozzles may be spaced apart from the first nozzles so as to be periodically disposed in a matrix form.

[0012] In an exemplary embodiment, the substrate processing apparatus may further include a reactance element connected between the upper electrode and the lower electrode.

[0013] In an exemplary embodiment, the output end of the RF power supply may be connected to the upper electrode, the RF power of the RF power supply may be transferred to the lower electrode through a parasitic capacitor located between the upper electrode and the lower electrode, and the variable capacitor may be connected between the lower electrode and the ground layer.

[0014] In an example embodiment, the output end of the RF power supply may be connected to the upper electrode, the variable capacitor may be connected between the upper electrode and the lower electrode, and the RF power of the RF power supply may be transferred to the lower electrode through the variable capacitor and the parasitic capacitor located between the upper electrode and the lower electrode.

[0015] In an exemplary embodiment, the substrate processing apparatus may further include a fixed inductor connected between the upper electrode and the lower electrode.

[0016] A substrate processing device according to an exemplary embodiment of the present invention includes an upper electrode, a lower electrode, a substrate mounting element and a variable capacitor. The upper electrode is arranged at the upper part of the processing chamber and is arranged to be separated from the upper surface of the processing chamber. The lower electrode is arranged below the upper electrode at a fixed distance from the upper electrode and is arranged relative to the upper electrode. The substrate mounting element is electrically grounded and is arranged below the lower electrode at a fixed distance from the upper electrode and is arranged to face the lower electrode, and the substrate is mounted on the substrate mounting element. The variable capacitor is connected between the lower electrode and the ground layer or between the lower electrode and the output end of the radio frequency power supply. The upper electrode has a plurality of protrusions, the plurality of protrusions protrude in the direction of the lower electrode, and the plurality of protrusions are respectively aligned with a plurality of openings formed in the lower electrode. A method for operating the substrate processing device includes the following steps: supplying a first gas to a substrate mounting element through a first nozzle formed in a protrusion; supplying a second gas to the substrate mounting element through an opening from a second nozzle formed in a lower surface of a lower electrode; supplying radio frequency power to an upper electrode through a radio frequency power supply to generate a first plasma between the protrusion and the substrate mounting element; and distributing the radio frequency power supplied to the upper electrode to a lower electrode through the radio frequency power supply to generate a second plasma between the lower electrode and the substrate mounting element.

[0017] In one example embodiment, the first plasma and the second plasma may be generated simultaneously.

[0018] In an exemplary embodiment, the method may further include changing a capacitance value of the variable capacitor.

[0019] A substrate processing device according to an exemplary embodiment includes a processing chamber, an upper electrode, a lower electrode, and a substrate mounting element. The upper electrode is disposed inside the processing chamber and has a nozzle, and the nozzle protrudes along the lower length direction. The lower electrode is disposed below the upper electrode. The substrate mounting element is disposed to face the lower electrode, and the substrate is mounted on the substrate mounting element. The lower electrode is electrically floating.

[0020] Beneficial Effects

[0021] As described above, a plasma substrate processing apparatus according to an example embodiment can change the characteristics of a thin film by adjusting the ratio of the RF power applied to the first plasma generated between the upper electrode having the protrusion and the substrate mounting member and the RF power applied to the second plasma generated between the lower electrode having the opening aligned with the protrusion and the substrate mounting member.

[0022] Furthermore, the plasma substrate processing apparatus according to an example embodiment may perform atomic layer deposition (ALD) by separately injecting two gases through different paths and generating first and second plasmas in different regions using one of the two gases.

[0023] Furthermore, the plasma substrate processing apparatus according to an example embodiment may improve large-area film quality and film formation characteristics by generating first plasma and second plasma in different spaces to make a difference in dissociation rates. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 FIG. 1 is a plan view of a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0025] Figure 2 For along Figure 1 A cross-sectional view taken along line AA'.

[0026] Figure 3 For along Figure 1 A cross-sectional view taken along line BB'.

[0027] Figure 4 For along Figure 1 A cross-sectional view taken along line CC'.

[0028] Figure 5 For along Figure 1 A sectional stereogram taken along line D-D'.

[0029] Figure 6 To illustrate Figure 1 Circuit diagram of a substrate processing device.

[0030] Figure 7 FIG. 5 is a conceptual diagram illustrating a substrate processing apparatus according to another exemplary embodiment of the present invention.

[0031] Figure 8 To illustrate Figure 7 Circuit diagram of a substrate processing device.

[0032] Fig. 9 FIG. 1 is a cross-sectional perspective view of a substrate processing apparatus according to another exemplary embodiment of the present invention.

[0033] Fig.10 To illustrate Fig. 9 Circuit diagram of a substrate processing device.

[0034] Fig.11 FIG. 1 is a cross-sectional exploded perspective view of a substrate processing apparatus according to another exemplary embodiment of the present invention.

[0035] Fig.12FIG. 1 is a cross-sectional perspective view of a substrate processing apparatus according to another exemplary embodiment of the present invention.

[0036] Fig.13 for Fig.12 Circuit diagram of the substrate processing device. DETAILED DESCRIPTION

[0037] As the demand for large-area flat panel displays has increased recently, high-quality organic layers need to be formed. In particular, in large-area packaging processes or oxide semiconductor deposition processes, there is a growing demand for atomic layer deposition that alternately injects two gases to form a thin film.

[0038] In a substrate processing apparatus according to an example embodiment, a first plasma generating space and a second plasma generating space can be distinguished from each other, wherein a reaction gas is sufficiently activated and generates a first plasma in the first plasma generating space, and excessive plasma exposed to a thin film is suppressed in the second plasma generating space. In addition, a ratio of a power source for generating the first plasma to a power source for generating the second plasma can be adjusted by using a variable capacitor.

[0039] According to an exemplary embodiment, a substrate processing apparatus may include a gas injection unit and a substrate mounting element that are disposed to be separated from each other. The gas injection unit includes a lower electrode and an upper electrode that are stacked and separated from each other. The upper electrode having a protrusion and the lower electrode having an opening aligned with the protrusion receive radio frequency power distributed from a single radio frequency power supply through a parasitic capacitor and a variable capacitor. In addition, the gas injection unit supplies a first gas and a second gas to the substrate through different paths.

[0040] According to an exemplary embodiment, the output of the RF power supply after branching can be supplied to the upper electrode, and the part of the RF power supplied to the upper electrode can be transferred to the lower electrode through the parasitic capacitor between the upper electrode and the lower electrode. The first RF power supplied between the upper electrode and the substrate mounting element and the second RF power supplied between the lower electrode and the substrate mounting element can be independently controlled. To this end, the variable capacitor is connected between the lower electrode and the ground layer. In this case, the RF power applied to the part of the upper electrode will generate a first plasma between the upper electrode and the substrate mounting element, wherein the upper electrode and the substrate mounting element are opposite to each other through the opening of the lower electrode. The remaining RF power is transferred to the lower electrode through the parasitic capacitor, and a second plasma will be generated between the lower electrode and the substrate mounting element. When the capacitance value of the variable capacitor is adjusted, the distribution ratio of the first RF power and the second RF power can be adjusted. The power distribution ratio can be adjusted to suppress the excessive exposure of the second plasma to the film at a low plasma density, while fully activating the reaction gas at a high plasma density. The RF power is transferred to the lower electrode through a parasitic capacitor located between the upper electrode and the lower electrode.

[0041] One end of the variable capacitor may be connected to the lower electrode, and the other end of the variable capacitor may be connected to the ground layer. When RF power is applied to the upper electrode, a first current flows between the upper electrode and the ground layer, and a second current flows to the lower electrode through a parasitic capacitor between the lower electrode and the upper electrode.

[0042] According to the present invention, the characteristics of the deposited film can be improved. When adjusting the capacitance value of the variable capacitor, the first plasma can have a higher electron temperature and a higher plasma density than the second plasma. The first plasma can provide a high reaction gas dissociation rate.

[0043] According to an exemplary embodiment, an upper electrode of a substrate processing apparatus can supply two gases (precursor gas and reaction gas) to a substrate simultaneously or sequentially through different paths of an atomic layer deposition process. For example, the upper electrode can be multiplexed to supply two gases through different paths.

[0044] In a plasma substrate processing apparatus according to an example embodiment, in an atomic layer deposition process using a precursor gas and a reaction gas, different plasma densities may be provided to respective regions to form a high-quality thin film.

[0045] Hereinafter, the present invention will be described in detail based on preferred embodiments. However, these embodiments are used to better understand the present invention, and it is obvious to those with ordinary knowledge in the art that the present invention is not limited thereto. In addition, when the detailed description of known functions or structures related to the present invention is considered to unnecessarily obscure the spirit of the present invention, this detailed description will be omitted.

[0046] Figure 1 FIG. 1 is a plan view of a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0047] Figure 2 For along Figure 1 A cross-sectional view taken along line AA'.

[0048] Figure 3 For along Figure 1 A cross-sectional view taken along line BB'.

[0049] Figure 4 For along Figure 1 A cross-sectional view taken along line CC'.

[0050] Figure 5 For along Figure 1 A sectional stereogram taken along line D-D'.

[0051] Figure 6 To illustrate Figure 1 Circuit diagram of a substrate processing device.

[0052] Please refer to Figures 1 to 6 , a substrate processing apparatus 100 according to an exemplary embodiment may include a processing chamber 110, an upper electrode 130, a lower electrode 120, a substrate mounting element 152, and a variable capacitor 192. The upper electrode 130 has a plurality of protrusions 136, and the plurality of protrusions 136 are spaced apart from the upper surface of the upper portion of the processing chamber 110 to protrude downward. The lower electrode 120 is disposed under the upper electrode 130. The substrate mounting element 152 is electrically grounded and disposed to face the lower electrode 120, and a substrate is mounted on the substrate mounting element 152. The variable capacitor 192 is connected between the lower electrode 120 and a ground layer or between the lower electrode 120 and a radio frequency power supply.

[0053] The substrate processing apparatus 100 according to an exemplary embodiment may include a processing chamber 110, an upper electrode 130, a lower electrode 120, a substrate mounting element 152, and a variable capacitor 192. The upper electrode 130 is disposed above the processing chamber 110 and is spaced apart from the upper surface of the processing chamber 110. The lower electrode 120 is disposed opposite to the upper electrode 130 and is located below the upper electrode 130 at a predetermined distance from the upper electrode 130. The substrate mounting element 152 is electrically grounded and disposed to face the lower electrode 120 and is located below the lower electrode 120 at a predetermined distance from the lower electrode 120, and a substrate is mounted on the substrate mounting element 152. The variable capacitor 192 is connected between the lower electrode 120 and a ground layer or between the lower electrode 120 and an output terminal of the RF power supply 174.

[0054] The upper electrode 130 includes a plurality of protrusions 136 protruding in the direction of the lower electrode 120. The protrusions 136 are respectively aligned with the openings 122 formed in the lower electrode 120. The first gas is supplied to the substrate mounting element 152 through the first nozzle 138 formed through the protrusions 136. The second gas can be injected through the second nozzle 133, wherein the second nozzle 133 is formed in the lower surface of the upper electrode 130, and the second gas can be supplied to the substrate mounting element 152 through the flow path between the upper electrode 130 and the lower electrode 120 and the opening 122. The upper electrode 130 is connected to the RF power supply 174. Part of the RF power supplied by the RF power supply 174 generates a first plasma between the protrusions 136 and the grounded substrate mounting element 152. The remaining RF power supplied by the RF power supplier 174 is transferred to the lower electrode 120 through the parasitic capacitor between the upper electrode 130 and the lower electrode 120 , and generates a second plasma between the lower electrode 120 and the substrate mounting member 152 .

[0055] The substrate processing apparatus 100 may perform atomic layer deposition using a first gas and a second gas, wherein the first gas is supplied to the first nozzle 138 and the second gas is supplied to the second nozzle 133. In order to perform the atomic layer deposition, the substrate processing apparatus 100 may be assisted by plasma. When plasma technology is applied to the atomic layer deposition, the reactivity of the atomic layer deposition reaction gas may be improved, the process temperature range may be increased, and the purge time may be reduced.

[0056] In plasma enhanced atomic layer deposition (PE-ALD), after sequentially providing a precursor, purging the precursor using a purge gas, and supplying a reactive gas through plasma, a purge gas may be supplied. Since the reactive gas is supplied through plasma, the reactivity of the precursor may be increased to improve the film deposition rate and reduce the temperature of the substrate.

[0057] The substrate processing apparatus 100 according to an exemplary embodiment may generate the first plasma and the second plasma simultaneously, and may adjust the power ratio of the first plasma and the second plasma so as to achieve a high film growth rate and a high-quality film simultaneously.

[0058] The variable capacitor 192 may be connected between the lower electrode 120 and the ground layer. The capacitance of the variable capacitor 192 is Cv. The lower electrode 120 may receive the RF power through the capacitance Ca of the parasitic capacitor between the upper electrode 130 and the lower electrode 120.

[0059] The first plasma may be generated between the protrusion 136 of the upper electrode 130 and the substrate mounting element 152. The second plasma may be generated between the lower electrode 120 and the substrate mounting element 152. The first plasma impedance Zp1 of the first plasma may be determined by the first plasma resistance R p1 and the first plasma reactance X p1 The second plasma impedance Zp2 of the second plasma can be represented by the second plasma resistance R p2 and the second plasma reactance X p2 The equivalent circuit representation of .

[0060] Therefore, the output end of the impedance matching network 174a can be composed of the first plasma impedance Zp1 and the effective impedance Z 2eff The effective impedance Z 2eff The variable capacitor 192 connected in parallel to the second plasma impedance Zp2 and a parasitic capacitor connected in series to the second plasma impedance Zp2 and the variable capacitor 192 may be included, wherein the second plasma impedance Zp2 and the variable capacitor 192 are connected in parallel to each other.

[0061] In order to simply check the power distribution, the first plasma impedance Zp1 of the first plasma is assumed to be the first capacitor C1. In addition, the second plasma impedance Zp2 of the second plasma is assumed to be the second capacitor C2. The first current will flow to the first plasma impedance Zp1, and the second current will flow to the parasitic capacitor.

[0062] The ratio of the first current to the second current is as follows.

[0063] Equation 1

[0064]

[0065]

[0066] If C V >>C a ,

[0067] If C V →0,

[0068] Wherein ω is the angular frequency of the RF power supply 174, Zp1 is the first plasma impedance of the first plasma, Zp2 is the second plasma impedance of the second plasma, Ca is the capacitance of the parasitic capacitor located between the upper electrode and the lower electrode, and Cv is the capacitance of the variable capacitor 192 connected in parallel to the second plasma.

[0069] When the capacitance Cv of the variable capacitor 192 changes, the first current I1 flowing through the first plasma and the effective impedance Z flowing through the first plasma can be adjusted. 2eff The second current I2 is divided into a current I' flowing through the variable capacitor 192. 2 and the current I" flowing through the second plasma impedance 2 For example, the current I" flowing through the second plasma impedance is controlled according to the capacitance Cv of the variable capacitor 192. 2 .

[0070] Therefore, the variable capacitor 192 can adjust the ratio of the RF power source for generating the first plasma to the RF power source for generating the second plasma. The first plasma can discharge the first gas or the second gas at a high plasma density, and the second plasma can discharge the first gas or the second gas at a low plasma density. The density of the first plasma generated at the opening 122 can be greater than the density of the second plasma generated under the lower electrode 120. For example, the first plasma can fully dissociate the first gas or the second gas in the opening 122, and the second plasma can activate the first gas or the second gas, while suppressing the damage to the film quality caused by the low plasma density. Therefore, the thin film deposition rate and the film quality can be improved.

[0071] When the capacitance Cv of the variable capacitor 192 changes, the first current I1 flowing through the first plasma impedance Zp1 and the current I" flowing through the second plasma impedance Zp2 2 The ratio of the first RF power for generating the first plasma to the second RF power for generating the second plasma can be selected according to the film to be deposited.

[0072] The processing chamber 110 is a metal chamber and may be a cylindrical chamber or a square chamber. The cover 140 of the processing chamber 110 may cover the open upper surface of the processing chamber 110. The processing chamber 110 may be exhausted to a vacuum state by an exhaust unit. The processing chamber 110 may be electrically grounded.

[0073] The cover 140 may be disposed on the upper electrode 130 to be separated from the upper electrode 130, and a gas buffer space 144 may be provided between the lower surface of the cover 140 and the upper surface of the upper electrode 130. The cover 140 may be in a flat plate shape, may be formed of a conductive material, and may be grounded. The gas buffer space 144 may have a height of several millimeters or less to prevent parasitic plasma from being generated. The gas buffer space 144 may receive a first gas from the outside through a gas supply line 146. The gas buffer space 144 may supply the first gas to the opening 122 of the lower electrode through a first nozzle 138, wherein the first nozzle 138 passes through the convex portion 136.

[0074] The upper electrode 130 may be disposed to be separated from the lower portion of the cover 140. The upper electrode 130 may receive RF power from the RF power supply 174 through the impedance matching network 174a. The upper electrode 130 may be a conductive material in a flat plate shape. The upper electrode 130 may include a plurality of protrusions 136, which protrude from the lower surface of the upper electrode 130. The protrusions 136 may be arranged in a matrix form. The first nozzle 138 may be formed by passing through the protrusions 136 or continuously passing through the protrusions 136 and the upper electrode 130. The first nozzle 138 may inject a first gas.

[0075] The upper electrode 130 may include a plurality of first direction flow paths 132 and a pair of second direction flow paths, wherein the plurality of first direction flow paths 132 extend in parallel along the first direction, and the pair of second direction flow paths extend along the second direction perpendicular to the first direction and are respectively connected to the two ends of the first direction flow paths 132. The second nozzle 133 may be connected to the first direction flow path 132. The second nozzle 133 may be arranged in a matrix form at regular intervals on the lower surface of the upper electrode. The first nozzle 138 and the opening 122 may be arranged between adjacent first direction flow paths 132 at regular intervals along the first direction. The pair of second direction flow paths 134 may extend along the second direction on the two ends of the first direction flow paths 132 to supply the second gas to the first direction flow paths 132.

[0076] The lower electrode 120 may be a conductive material in a flat plate shape. The gap between the lower electrode 120 and the upper electrode 130 may be several millimeters or less to prevent parasitic plasma generation. The space 131 between the lower electrode 120 and the upper electrode 130 may form a flow path so that the second gas injected through the second nozzle 133 can be discharged through the opening 122.

[0077] The lower electrode 120 may receive a portion of the RF power supplied to the upper electrode 130 through capacitive coupling of a parasitic capacitor. The lower electrode 120 may include a plurality of openings 122 arranged in a matrix form. The substrate mounting element 152 and the grounded lower electrode 120 may generate a second plasma. The lower electrode 120 may be electrically connected to the variable capacitor 192.

[0078] The substrate mounting element 152 may be electrically grounded and may be in a flat plate shape. The substrate mounting element 152 may mount the substrate 153 on the upper surface of the substrate mounting element 152. The substrate mounting element 152 may support the substrate 153 and may heat or cool the substrate 153 at a fixed temperature.

[0079] The RF power supply 174 may have a frequency of several MHz to hundreds of MHz, and may supply RF power to the upper electrode 130 through the impedance matching network 174a. The upper electrode 130 may receive RF power at multiple points to suppress standing wave effects.

[0080] The insulating spacer 129 may be disposed at an edge of the upper surface of the lower electrode 120. The insulating spacer 129 may electrically insulate the upper electrode 130 and the lower electrode 120 from each other, and may provide a flow path for the second gas to flow. The flow path may be a space for the second gas injected from the second nozzle 133 to diffuse. The insulating spacer 129 may have a thickness of several millimeters or less so that the second gas does not generate parasitic plasma in the flow path.

[0081] The insulating portion 162 may be disposed to surround the edges of the upper electrode 130 and the lower electrode 120. The insulating portion 162 may be coupled to the sidewall of the processing chamber 110. The insulating portion 162 may be inserted into a step formed on the upper inner wall of the processing chamber 110 to be coupled to the sidewall of the processing chamber 110. The insulating portion 162 may support the upper electrode 130 through an auxiliary step formed in an upper portion of the insulating portion 162.

[0082] The auxiliary insulating spacer 164 may be provided to cover the edge of the insulating portion 162 and the upper electrode 130. The auxiliary insulating spacer 164 provides a gas buffer space 144 between the cover 140 and the upper electrode 130. The auxiliary insulating spacer 164 may be aligned with the outer surface of the insulating portion 162. The auxiliary insulating spacer 164 may be a ceramic or plastic such as alumina. The auxiliary insulating spacer 164 has a thickness of hundreds of micrometers to several millimeters to prevent parasitic plasma from being generated. The gas buffer space 144 may be connected to the first nozzle 138 passing through the upper electrode 130 and the protrusion 136.

[0083] The gas supply path 142 may vertically pass through the edge of the cover 140 to connect to the second direction flow path 134. The first auxiliary hole 134a may be provided at the edge of the upper electrode 130 to connect the gas supply path 142 and the second direction flow path 134. The second auxiliary hole 164a may be provided to pass through the auxiliary insulating spacer 164 to be aligned with the first auxiliary hole 134a. The gas supply path 142 may include a plurality of gas supply paths 142 and may be provided along the second direction.

[0084] The RF power supply line 172 may vertically pass through the cover 140 between a pair of adjacent first nozzles 138 aligned along the first direction to be electrically connected to the upper electrode 130 .

[0085] The upper electrode 130 may inject a first gas into the substrate 153 through the first nozzle 138, and may inject a second gas into the flow path through the second nozzle 133. The second gas diffused in the flow path may be injected through the opening 122 in the direction of the substrate 153. The first gas may be a precursor gas, and the second gas may be a reactive gas. Alternatively, the first gas may be a reactive gas, and the second gas may be a precursor gas. The precursor gas may be trimethyl aluminum (TMA), titanium tetrachloride (TiCl 4 ), hafnium tetrachloride (HfCl 4 ) or silane (SiH 4 The reaction gas may include hydrogen (H 2 ), nitrogen (N 2 ), oxygen (O 2 ), ammonia (NH 3 ), at least one of argon (Ar) and helium (He).

[0086] The plasma assisted atomic layer deposition (PE-ALD) process may include a first step, a second step, a third step, and a fourth step. In the first step, the upper electrode 130 is injected with a first gas (e.g., a precursor gas) through the first nozzle 138. In the second step, a purge gas (e.g., argon) is injected through the first nozzle 138 to remove excess precursor gas on the substrate. In the third step, an RF power source is supplied to the upper electrode 130, while a second gas (e.g., a reaction gas) is supplied through the second nozzle 133 to generate a first plasma between the protrusion 136 and the substrate mounting element 152 and a second plasma between the lower electrode 120 and the substrate mounting element 152. The first plasma may fully dissociate the second gas in the opening 122. The second plasma may activate the second gas between the lower electrode 120 and the substrate mounting element 152. In the fourth step, a purge gas (e.g., argon) is injected through the second nozzle 133 to remove excess second gas. The first to fourth steps described above may be repeated.

[0087] The operating method of the substrate processing apparatus according to an example embodiment may include the following steps: supplying a first gas to the substrate mounting element 152 through the first nozzle 138 formed in the protrusion 136; supplying a second gas to the substrate mounting element 152 through the opening 122 through the second nozzle 133 formed in the lower surface of the lower electrode 120; supplying RF power to the upper electrode 130 through the RF power supplier 174 to generate a first plasma between the protrusion 136 and the substrate mounting element 152; and distributing the RF power supplied to the upper electrode 130 to the lower electrode 120 to generate a second plasma between the lower electrode 120 and the substrate mounting element 152. The first plasma and the second plasma may be generated simultaneously. The density of the first plasma may be higher than the density of the second plasma.

[0088] To perform atomic layer deposition (ALD), the method may further include supplying a purge gas to the substrate mounting element 152 through the first nozzle 138 formed in the protrusion 136 after supplying the first gas to the substrate mounting element 152 through the first nozzle 138 .

[0089] In the method, in order to perform chemical vapor deposition (CVD), a first gas and a second gas may be supplied at the same time, and a first plasma and a second plasma may be formed at the same time.

[0090] In this method, the capacitance of the variable capacitor can be varied to adjust the characteristics of the first plasma and the second plasma.

[0091] The substrate processing apparatus according to an exemplary embodiment may be applied to a chemical vapor deposition (CVD) process. The first nozzle 138 may inject a first gas such as silane (SiH4), and at the same time, the second nozzle 133 may inject a dilution gas such as hydrogen, nitrogen, or ammonia. The first plasma may fully dissociate the first gas and the second gas, and the second plasma may activate the first gas and the second gas.

[0092] A substrate processing apparatus according to an example embodiment may perform an atomic layer deposition (ALD) process of an organic layer or an inorganic layer to improve moisture permeability characteristics in an encapsulation process of a large area display.

[0093] Figure 7 FIG. 5 is a conceptual diagram illustrating a substrate processing apparatus according to another exemplary embodiment of the present invention.

[0094] Figure 8 To illustrate Figure 7 Circuit diagram of a substrate processing device.

[0095] Please refer to Figure 7 and Figure 8 The substrate processing apparatus 100a may further include a reactance element 194, which is connected between the upper electrode 130 and the lower electrode 120. The reactance element 194 may have a reactance X. The reactance element 194 may be a fixed capacitor. The reactance element 194 may be connected in parallel to the parasitic capacitor. The reactance element 194 may effectively transfer the RF power to the lower electrode 120. The reactance element 194 may improve the linearity of the power distribution ratio according to the capacitance Cv of the variable capacitor 192.

[0096] Fig. 9 FIG. 1 is a cross-sectional perspective view of a substrate processing apparatus according to another exemplary embodiment of the present invention.

[0097] Fig.10 To illustrate Fig. 9 Circuit diagram of a substrate processing device.

[0098] Please refer to Fig. 9 and Fig.10 , the substrate processing apparatus 100b may include a variable capacitor 192, and the variable capacitor 192 is connected between the lower electrode 120 and the output end of the RF power supply 174. Specifically, the output end of the impedance matching network 174a may be branched to be connected to the upper electrode 130, and may be connected to the lower electrode 120 through the variable capacitor 192. The upper electrode 130 may be connected to the lower electrode 120 through the variable capacitor 192 and the parasitic capacitor.

[0099] When the capacitance Cv of the variable capacitor 192 is adjusted, the ratio of the first RF power supplied to the first plasma generated between the protrusion 136 of the upper electrode 130 and the substrate mounting member 152 and the second RF power supplied to the second plasma generated between the lower electrode 120 and the substrate mounting member 152 may be adjusted. The parasitic capacitor between the upper electrode 130 and the lower electrode 120 may be connected in parallel to the variable capacitor 192. The second plasma impedance Zp2 may be connected in series to the parasitic capacitor and the variable capacitor 192, wherein the parasitic capacitor and the variable capacitor 192 are connected in parallel to each other.

[0100] To simply check the power distribution, assume that the first plasma impedance Zp1 of the first plasma is the first capacitance C1 and the second plasma impedance Zp2 of the second plasma is the second capacitance C2. The ratio of the first current to the second current is as follows.

[0101] Equation 2

[0102]

[0103]

[0104] If C V >>C a ,

[0105] If C V →0,

[0106] Fig.11 FIG. 1 is a cross-sectional exploded perspective view of a substrate processing apparatus according to another exemplary embodiment of the present invention.

[0107] Please refer to Fig.11 , the substrate processing apparatus 100c may include a flow path insulating plate 180. The flow path insulating plate 180 may be disposed between the upper electrode 130 and the lower electrode 120. The flow path insulating plate 180 may be an insulator. The flow path insulating plate 180 may have an auxiliary opening 182 aligned with the opening 122. The auxiliary opening 182 may pass through the flow path insulating plate 180. The flow path insulating plate 180 may have a groove 184 connecting the second nozzle 133 and the auxiliary opening 182. The groove 184 may extend from the upper surface of the flow path insulating plate 180 in the second direction. The flow path insulating plate 180 may form a flow path while suppressing parasitic discharge.

[0108] The reactance element 194 may be additionally disposed between the upper electrode 130 and the lower electrode 120 to transfer the RF power supplied from the upper electrode 130 to the lower electrode 120 .

[0109] The reactive element 194 may be a fixed capacitor. The flow path insulating plate 180 may provide a flow path for the second gas while suppressing parasitic discharge.

[0110] Fig.12 FIG. 1 is a cross-sectional perspective view of a substrate processing apparatus according to another exemplary embodiment of the present invention.

[0111] Fig.13 for Fig.12 Circuit diagram of the substrate processing device.

[0112] Please refer to Fig.12 and Fig.13, the substrate processing apparatus 100d may include a variable capacitor 192 and a fixed inductor 193, the variable capacitor 192 and the fixed inductor 193 being connected between the upper electrode 130 and the lower electrode 120. The fixed inductor 193 may have an inductance L. The capacitance Ca of the parasitic capacitor, the capacitance Cv of the variable capacitor 192, and the inductance L of the fixed inductor 193 may constitute a parallel resonance circuit. When the RF power supply operates at a resonance frequency by adjusting the capacitance Cv of the variable capacitor 192, the impedance of the resonance circuit may increase infinitely, and thus, the power of the RF power supply may mainly selectively generate only the first plasma. At the same time, when the RF power supply operates at a frequency deviating from the resonance frequency by adjusting the capacitance Cv of the variable capacitor 192, the RF power may be distributed between the lower electrode and the substrate mounting element to simultaneously generate the first plasma and the second plasma.

[0113] Please refer again Figure 5 , a substrate processing apparatus 100 according to an exemplary embodiment may include a processing chamber 110, an upper electrode 130, a lower electrode 120, and a substrate mounting element 152. The upper electrode 130 is disposed inside the processing chamber 110 and has a nozzle, and the nozzle protrudes along the lower length direction. The lower electrode 120 is disposed below the upper electrode 130. The substrate mounting element 152 is disposed to face the lower electrode 120, and the substrate is mounted on the substrate mounting element 152. The lower electrode 120 is electrically floating.

[0114] That is to say, Figure 5 , the variable capacitor 192 may be removed. Therefore, the lower electrode 120 may receive the RF power from the upper electrode 130 through capacitive coupling to generate the second plasma between the lower electrode 120 and the substrate mounting element 152. In addition, the convex portion of the upper electrode 130 may generate the first plasma between the upper electrode 130 and the substrate mounting element 152 through the opening of the lower electrode 120. The voltage division model may cause the voltage drop between the lower electrode 120 and the substrate mounting element 152 to be smaller than the voltage drop between the upper electrode 130 and the substrate mounting element 152. Therefore, the characteristics of the second plasma may be different from the characteristics of the first plasma.

[0115] While example embodiments have been described and illustrated above, it will be apparent to those skilled in the art that modifications and variations may be made without departing from the scope of the spirit of the invention as defined by the appended claims.

Claims

1. A substrate processing device, comprising: a processing chamber; an upper electrode having a plurality of protrusions spaced apart from an upper surface of an upper portion of the processing chamber to protrude downward; A lower electrode disposed below the upper electrode, the lower electrode having an opening aligned with the convex portion; A substrate mounting element, electrically grounded and arranged to face the lower electrode, and on which a substrate is mounted; a variable capacitor connected between the lower electrode and the radio frequency power supply; as well as a fixed inductor connected between the upper electrode and the lower electrode, wherein the upper electrode is connected to the RF power supply to generate a first plasma between the protrusion and the substrate mounting element, and The RF power of the RF power supplier generates a second plasma between the lower electrode and the substrate mounting element, The output end of the radio frequency power supply is connected to the upper electrode. The variable capacitor is connected between the upper electrode and the lower electrode, and The RF power of the RF power supplier is transferred to the lower electrode through the variable capacitor and a parasitic capacitor between the upper electrode and the lower electrode.

2. The substrate processing apparatus according to claim 1, wherein the first gas is supplied to the substrate mounting member through a first nozzle formed in the convex portion, and A second gas is supplied to the substrate mounting member through an opening from a second nozzle formed in a lower surface of the upper electrode.

3. The substrate processing apparatus according to claim 1, wherein the convex portion and the plurality of first nozzles are periodically arranged in a matrix form, and A plurality of second nozzles are spaced apart from the first nozzles so as to be periodically arranged in a matrix form.

4. A method for operating a substrate processing apparatus as claimed in claim 1, wherein the substrate processing apparatus comprises an upper electrode, a lower electrode, a substrate mounting element and a variable capacitor, wherein the upper electrode is disposed in an upper portion of a processing chamber and is disposed to be separated from an upper surface of the processing chamber, the lower electrode is disposed below the electrode at a fixed distance from the upper electrode and is disposed relative to the upper electrode, the substrate mounting element is electrically grounded and disposed below the lower electrode at a fixed distance from the upper electrode and is disposed to face the lower electrode, and a substrate is mounted on the substrate mounting element, the variable capacitor is connected between the lower electrode and an output terminal of a radio frequency power supply, wherein the upper electrode has a plurality of protrusions, the plurality of protrusions protrude in the direction of the lower electrode, and the plurality of protrusions are respectively aligned with a plurality of openings formed in the lower electrode, the method comprising: supplying a first gas to the substrate mounting element through a first nozzle formed in the protrusion; supplying a second gas to the substrate mounting element through the opening by a second nozzle formed in a lower surface of the lower electrode; supplying radio frequency power to the upper electrode through the radio frequency power supply to generate a first plasma between the protrusion and the substrate mounting element; as well as The RF power supplied to the upper electrode is distributed to the lower electrode by the RF power supplier to generate a second plasma between the lower electrode and the substrate mounting member. The method of claim 4 , wherein the first plasma and the second plasma are generated simultaneously.

6. The method of claim 5, further comprising: The capacitance value of the variable capacitor is changed.

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